-
Quantum Coherent Transport in SnTe Topological Crystalline Insulator Thin Films
Authors:
Badih A. Assaf,
Ferhat Katmis,
Peng Wei,
Biswarup Satpati,
Zhan Zhang,
Steven P. Bennett,
Vincent G. Harris,
Jagadeesh S. Moodera,
Don Heiman
Abstract:
Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Resul…
▽ More
Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.
△ Less
Submitted 3 December, 2014; v1 submitted 7 March, 2014;
originally announced March 2014.
-
High coercivity cobalt carbide nanoparticles processed via polyol reaction: A new permanent magnet material
Authors:
V. G. Harris,
Y. Chen,
A. Yang,
S. Yoon,
Z. Chen,
Anton Geiler,
C. N. Chinnasamy,
L. H. Lewis,
C. Vittoria,
E. E. Carpenter,
K. J. Carroll,
R. Goswami,
M. A. Willard,
L. Kurihara,
M. Gjoka,
O. Kalogirou
Abstract:
Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase vol…
▽ More
Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase volume, particle size, and particle morphology all play important roles in determining permanent magnet properties. Further, the acicular particle shape provides an enhancement to the coercivity via dipolar anisotropy energy as well as offering potential for particle alignment in nanocomposite cores. While Curie temperatures are near 510K at temperatures approaching 700 K the carbide powders experience an irreversible dissociation to metallic cobalt and carbon thus limiting operational temperatures to near room temperature.
△ Less
Submitted 6 November, 2009;
originally announced November 2009.
-
Nano granular metallic Fe - oxygen deficient TiO$_{2-δ}$ composite films: A room temperature, highly carrier polarized magnetic semiconductor
Authors:
S. D. Yoon,
C. Vittoria,
V. G. Harris,
A. Widom,
K. E. Miller,
M. E. McHenry
Abstract:
Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-δ}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition of Fe and TiO$_2$ resulted in $\approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-δ}$ matrix. The films show ferromagnetic behavior…
▽ More
Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-δ}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition of Fe and TiO$_2$ resulted in $\approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-δ}$ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 Gauss at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed well with the measured value. The film composite structure was characterized as p-type magnetic semiconductor at 300 K with a carrier density of the order of $ 10^{22} /{\rm cm^3}$. The hole carriers were excited at the interface between the nano granular Fe and TiO$_{2-δ}$ matrix similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. From the large anomalous Hall effect directly observed in these films it follows that the holes at the interface were strongly spin polarized. Structure and magneto transport properties suggested that these PLD films have potential nano spintronics applications.
△ Less
Submitted 8 January, 2008;
originally announced January 2008.
-
Magnetoelectric Effects on Composite Nano Granular $Fe/TiO_{2-δ}$ Films
Authors:
S. D. Yoon,
C. Vittoria,
V. G. Harris,
A. Widom,
Y. N. Srivastava
Abstract:
Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelectric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hal…
▽ More
Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelectric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hall resistance measured above 50 K, the magnetoelectic resistance below 50 K is significantly larger and exhibits an even symmetry with respect to magnetic field reversal $H\to -H$. The measurement technique required attached electrodes in the plane of the film composite in order to measure voltage as a function of bias current and external magnetic field. To our knowledge, the composite films are unique in terms of showing magnetoelectric effects at low temperatures, $<$ 50 K, and anomalous Hall effects at high temperatures, $>$ 50 K.
△ Less
Submitted 29 November, 2007;
originally announced November 2007.
-
Room temperature spin polarized magnetic semiconductor
Authors:
Soack Dae Yoon,
Carmine Vittoria,
Vincent G. Harris,
Allan Widom
Abstract:
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-δ}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure…
▽ More
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-δ}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure was characterized as p-type magnetic semiconductor at $300 ^oK$ with a carrier density of the order of $10^{20} /cm^3$. The undoped pure TiO$_{2-δ}$ film was characterized as an n-type magnetic semiconductor. The hole carriers were excited at the interface between the granular Fe and TiO$_{2-δ}$ layers similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. The holes at the interface were polarized in an applied magnetic field raising the possibility that these granular MOS structures can be utilized for practical spintronic device applications.
△ Less
Submitted 21 May, 2007;
originally announced May 2007.
-
Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO$_{2-δ}$
Authors:
Soack Dae Yoon,
Vincent G. Harris,
Carmine Vittoria,
Allan Widom
Abstract:
TiO$_{2-δ}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconduc…
▽ More
TiO$_{2-δ}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-δ}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.
△ Less
Submitted 17 April, 2007;
originally announced April 2007.
-
Magnetic Field Melting of the Charge-Ordered State of La0.5Ca0.5MnO3: A Local Structure Perspective
Authors:
T. A. Tyson,
M. Deleon,
M. Crof,
V. G. Harris,
C. -C. Kao,
J. Kirkland,
S. -W. Cheong
Abstract:
The local structure about the Mn site in the half doped system La0.5Ca0.5MnO3 was measured in magnetic fields up 10 T to probe the melting of the charge ordered state. Examination of the Mn-O and Mn-Mn correlations reveal three distinct regions in the structure-field diagram. A broad region with weak field dependence (mainly antiferromatnetic phase below 7.5 T), a narrow-mixed phase region near…
▽ More
The local structure about the Mn site in the half doped system La0.5Ca0.5MnO3 was measured in magnetic fields up 10 T to probe the melting of the charge ordered state. Examination of the Mn-O and Mn-Mn correlations reveal three distinct regions in the structure-field diagram. A broad region with weak field dependence (mainly antiferromatnetic phase below 7.5 T), a narrow-mixed phase region near ~ 8.5 T followed by a ferromagnetic phase region with strong field-structure coupling. At high field the Mn-O radial distribution becomes Gaussian and the Mn-Mn correlations are enhanced - consistent with the dominance of a ferromagnetic phase. The exponential change in resistivity in the first region (observed in transport measurements) is dominated by the reordering of the moments on the Mn sites from CE type antiferromagnetic to ferromagnetic order with only a weak change in the local distortions of the MnO6 octahedra.
△ Less
Submitted 9 June, 2003;
originally announced June 2003.
-
The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states
Authors:
B. Nadgorny,
I. I. Mazin,
M. Osofsky,
R. J. Soulen, Jr.,
P. Broussard,
R. M. Stroud,
D. J. Singh,
V. G. Harris,
A. Arsenov,
Ya. Mukovskii
Abstract:
Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant increase in the current spin polarization with the residual resistivity. This counterintuitive trend can be understood as a transition from ballistic to diff…
▽ More
Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant increase in the current spin polarization with the residual resistivity. This counterintuitive trend can be understood as a transition from ballistic to diffusive transport in the contact. Our results strongly suggest that LSMO does have minority spin states at the Fermi level. However, since its current spin polarization is much higher than that of the density of states, this material can mimic the behavior of a true half-metal in transport experiments. Based on our results we call this material a {\it transport} half-metal.
△ Less
Submitted 10 November, 2000;
originally announced November 2000.