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The Winner Takes It All: Carbon Supersedes Hexagonal Boron Nitride with Graphene on Transition Metals at High Temperatures
Authors:
Adrian Hemmi,
Ari Paavo Seitsonen,
Thomas Greber,
Huanyao Cun
Abstract:
The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of two-dimensional (2D) materials-based devices, since it is the key 2D encapsulation material. Here, a decisive guideline is reported for fabricating high-quality h-BN on transition metals: It is crucial to exclude carbon from h-BN related process. Otherwise carbon prevails over boron and nitro…
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The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of two-dimensional (2D) materials-based devices, since it is the key 2D encapsulation material. Here, a decisive guideline is reported for fabricating high-quality h-BN on transition metals: It is crucial to exclude carbon from h-BN related process. Otherwise carbon prevails over boron and nitrogen due to its larger binding energy, thereupon forming graphene on metals after high-temperature annealing. We demonstrate the surface reaction-assisted conversion from h-BN to graphene with high-temperature treatments. The pyrolysis temperature Tp is an important quality indicator for h-BN/metals. When the temperature is lower than Tp, the quality of h-BN layer is improved upon annealing. While the annealing temperature is above Tp, in case of carbon-free conditions, the h-BN disintegrates and nitrogen desorbs from the surface more easily than boron, eventually leading to clean metal surfaces. However, once the h-BN layer is exposed to carbon, graphene forms on Pt(111) in the high-temperature regime. This not only provides an indispensable principle (avoid carbon) for fabricating high-quality h-BN materials on transition metals, but also offers a straightforward method for the surface reaction-assisted conversion from h-BN to graphene on Pt(111).
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Submitted 13 October, 2022;
originally announced October 2022.
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Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)
Authors:
Adrian Hemmi,
Huanyao Cun,
Steven Brems,
Cedric Huyghebaert,
Thomas Greber
Abstract:
Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh$^2$ law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is in…
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Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh$^2$ law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1$\times$1) unit cells and follows the substrate twinning at the millimeter scale.
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Submitted 15 May, 2021;
originally announced May 2021.
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High-quality hexagonal boron nitride from 2D distillation
Authors:
Huanyao Cun,
Zichun Miao,
Adrian Hemmi,
Marcella Iannuzzi,
Jürg Osterwalder,
Michael S. Altman,
Thomas Greber
Abstract:
The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since it is insulating, tight, flat, transparent and chemically inert, though it is difficult to attain in ultimate quality. Here, a new scheme is reported for produc…
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The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since it is insulating, tight, flat, transparent and chemically inert, though it is difficult to attain in ultimate quality. Here, a new scheme is reported for producing single layer h-BN that shows higher quality and much more uniformity than material from chemical vapor deposition (CVD). We delaminate CVD h-BN from Rh(111) and transfer it to a clean metal surface. The twisting angle between BN and the new substrate yields metastable moiré structures. Annealing above 1000 K leads to 2D distillation, i.e., catalyst-assisted BN sublimation from the edges of the transferred layer and subsequent condensation into superior quality h-BN. This provides a new and low-cost way of high-quality 2D material production remote from CVD instrumentation.
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Submitted 24 October, 2020;
originally announced October 2020.
