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Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet
Authors:
Ping Kwan Johnny Wong,
Wen Zhang,
Fabio Bussolotti,
Xinmao Yin,
Tun Seng Herng,
Lei Zhang,
Yu Li Huang,
Giovanni Vinai,
Sridevi Krishnamurthi,
Danil W Bukhvalov,
Yu Jie Zheng,
Rebekah Chua,
Alpha T N Diaye,
Simon A. Morton,
Chao-Yao Yang,
Kui-Hon Ou Yang,
Piero Torelli,
Wei Chen,
Kuan Eng Johnson Goh,
Jun Ding,
Minn-Tsong Lin,
Geert Brocks,
Michel P de Jong,
Antonio H Castro Neto,
Andrew Thye Shen Wee
Abstract:
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,…
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Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
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Submitted 6 June, 2022;
originally announced June 2022.
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Room temperature ferromagnetism of monolayer chromium telluride with perpendicular magnetic anisotropy
Authors:
Rebekah Chua,
Jun Zhou,
Xiaojiang Yu,
Wei Yu,
Jian Gou,
Rui Zhu,
Lei Zhang,
Mark B. H. Breese,
Wei Chen,
Kian Ping Loh,
Yuan Ping Feng,
Ming Yang,
Yu Li Huang,
Andrew T. S. Wee
Abstract:
The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100…
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The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100C), compatible with Si CMOS technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (Tc) of ~344 K for the Cr3Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to ~240 K for the thicker film (~ 7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with room temperature ferromagnetism for new magnetic and spintronic devices.
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Submitted 27 February, 2021;
originally announced March 2021.
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Point Defects and Localized Excitons in 2D WSe2
Authors:
Yu Jie Zheng,
Yifeng Chen,
Yu Li Huang,
Pranjal Kumar Gogoi,
Ming Yang Li,
Lain-Jong Li,
Paolo E. Trevisanutto,
Qixing Wang,
Stephen J Pennycook,
Andrew Thye Shen Wee,
Su Ying Quek
Abstract:
Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tun…
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Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tunneling microscopy (STM) and scanning transmission electron microscopy experiments, that W vacancies are not present in our CVD-grown 2D WSe2. We predict that O-passivated Se vacancies (O_Se) and O interstitials (Oins) are present in 2D WSe2, because of facile O2 dissociation at Se vacancies, or due to the presence of WO3 precursors in CVD growth. These defects give STM images in good agreement with experiment. The optical properties of point defects in 2D WSe2 are important because single photon emission (SPE) from 2D WSe2 has been observed experimentally. While strain gradients funnel the exciton in real space, point defects are necessary for the localization of the exciton at length scales that enable photons to be emitted one at a time. Using state-of-the-art GW-Bethe-Salpeter-equation calculations, we predict that only Oins defects give localized excitons within the energy range of SPE in previous experiments, making them a likely source of previously observed SPE. No other point defects (O_Se, Se vacancies, W vacancies and Se_W antisites) give localized excitons in the same energy range. Our predictions suggest ways to realize SPE in related 2D materials and point experimentalists toward other energy ranges for SPE in 2D WSe2.
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Submitted 14 May, 2019; v1 submitted 1 November, 2018;
originally announced November 2018.
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Robust and clean Majorana zero mode in the vortex core of high-temperature superconductor (Li0.84Fe0.16)OHFeSe
Authors:
Q. Liu,
C. Chen,
T. Zhang,
R. Peng,
Y. J. Yan,
C. H. P. Wen,
X. Lou,
Y. L. Huang,
J. P. Tian,
X. L. Dong,
G. W. Wang,
W. C. Bao,
Q. H. Wang,
Z. P. Yin,
Z. -X. Zhao,
D. L. Feng
Abstract:
The Majorana fermion, which is its own anti-particle and obeys non-abelian statistics, plays a critical role in topological quantum computing. It can be realized as a bound state at zero energy, called a Majorana zero mode (MZM), in the vortex core of a topological superconductor, or at the ends of a nanowire when both superconductivity and strong spin orbital coupling are present. A MZM can be de…
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The Majorana fermion, which is its own anti-particle and obeys non-abelian statistics, plays a critical role in topological quantum computing. It can be realized as a bound state at zero energy, called a Majorana zero mode (MZM), in the vortex core of a topological superconductor, or at the ends of a nanowire when both superconductivity and strong spin orbital coupling are present. A MZM can be detected as a zero-bias conductance peak (ZBCP) in tunneling spectroscopy. However, in practice, clean and robust MZMs have not been realized in the vortices of a superconductor, due to contamination from impurity states or other closely-packed Caroli-de Gennes-Matricon (CdGM) states, which hampers further manipulations of Majorana fermions. Here using scanning tunneling spectroscopy, we show that a ZBCP well separated from the other discrete CdGM states exists ubiquitously in the cores of free vortices in the defect free regions of (Li0.84Fe0.16)OHFeSe, which has a superconducting transition temperature of 42 K. Moreover, a Dirac-cone-type surface state is observed by angle-resolved photoemission spectroscopy, and its topological nature is confirmed by band calculations. The observed ZBCP can be naturally attributed to a MZM arising from this chiral topological surface states of a bulk superconductor. (Li0.84Fe0.16)OHFeSe thus provides an ideal platform for studying MZMs and topological quantum computing.
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Submitted 16 December, 2018; v1 submitted 3 July, 2018;
originally announced July 2018.
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Voltage Control of Uni-directional Anisotropy in Ferromagnet-Multiferroic System
Authors:
Sasikanth Manipatruni,
Dmitri E. Nikonov,
Chia-Ching Lin,
Prasad Bhagwati,
Yen Lin Huang,
Anoop R. Damodaran,
Zuhuang Chen,
Ramamoorthy Ramesh,
Ian A. Young
Abstract:
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic…
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Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic (AFM) and FE orders is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as CoFe or LSMO. While previous work has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field, several puzzling issues remain. Perhaps the most intriguing among them is that the BiFeO3-CoFe bilayer did not demonstrate any electrically controlled directional anisotropy, i.e., an exchange bias, which is a potential mechanism for 180o magnetic reversal and is independent of switching kinetics. However, what is needed/preferred for logic and memory is a magneto-electric mechanism that works analogous to an applied field, i.e a uni-directional anisotropy that is voltage modulated. Here, we present the evidence of electrical control of exchange bias of a laterally scaled spin valve that is exchange-coupled to BiFeO3 at room temperature. We show that the exchange bias in this bilayer is thermally robust, electrically controlled and reversible. We anticipate that magneto-electricity at such scaled dimensions provides a powerful pathway for computing beyond the modern nanoelectronics transistors by enabling a new class of non-volatile, ultra-low energy computing elements.
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Submitted 25 January, 2018;
originally announced January 2018.
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Matrix-assisted fabrication and exotic charge mobility of (Li,Fe)OHFeSe superconductor films
Authors:
Y. L. Huang,
Z. P. Feng,
J. Yuan,
W. Hu,
J. Li,
S. L. Ni,
S. B. Liu,
Y. Y. Mao,
H. X. Zhou,
H. B. Wang,
F. Zhou,
G. M. Zhang,
K. Jin,
X. L. Dong,
Z. X. Zhao
Abstract:
Superconducting (Li1-xFex)OHFe1-ySe films are attractive for both the basic research and practical application. However, the conventional vapor deposition techniques are not applicable in synthesizing the films of such a complex system. So no intrinsic charge transport measurements on the films are available so far to reveal the nature of charge carriers, which is fundamental to understanding the…
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Superconducting (Li1-xFex)OHFe1-ySe films are attractive for both the basic research and practical application. However, the conventional vapor deposition techniques are not applicable in synthesizing the films of such a complex system. So no intrinsic charge transport measurements on the films are available so far to reveal the nature of charge carriers, which is fundamental to understanding the iron-based superconductivity mechanism. Herein we report a soft chemical film technique (matrix-assisted hydrothermal epitaxial growth), by which we have succeeded in growing a series of (Li1-xFex)OHFe1-ySe films covering the whole superconducting regime, with the superconducting transition temperature (Tc) from 4 K up to 42 K. This film technique opens up a new way for fabricating other complex functional materials as well. Furthermore, our systematic transport investigation on the film samples indicates that both the electron and hole carriers contribute to the charge transport, with the scattering rates deviating from the Fermi liquid. We find that the superconductivity occurs upon the electron and hole mobility becoming divergent. And in the high Tc samples, the electron carriers are found much more mobile than the holes, a feature distinct from the low Tc samples. Hence, our transport results provide key insights into the underlying physics for iron-based high-Tc superconductivity.
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Submitted 8 November, 2017;
originally announced November 2017.
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Reemergence of high-Tc superconductivity in the (Li1-xFex)OHFe1-ySe under high pressure
Authors:
J. P. Sun,
P. Shahi,
H. X. Zhou,
Y. L. Huang,
K. Y. Chen,
B. S. Wang,
S. L. Ni,
N. N. Li,
K. Zhang,
W. G. Yang,
Y. Uwatoko,
K. Jin,
F. Zhou,
D. J. Singh,
X. L. Dong,
Z. X. Zhao,
J. -G. Cheng
Abstract:
The pressure-induced reemergence of the second high-Tc superconducting phase (SC-II) in the alkali-metal intercalated AxFe2-ySe2 (A = K, Rb, Cs, Tl) remains an enigma and proper characterizations on the superconducting- and normal-state properties of the SC-II phase were hampered by the intrinsic inhomogeneity and phase separation. To elucidate this intriguing problem, we performed a detailed high…
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The pressure-induced reemergence of the second high-Tc superconducting phase (SC-II) in the alkali-metal intercalated AxFe2-ySe2 (A = K, Rb, Cs, Tl) remains an enigma and proper characterizations on the superconducting- and normal-state properties of the SC-II phase were hampered by the intrinsic inhomogeneity and phase separation. To elucidate this intriguing problem, we performed a detailed high-pressure magnetotransport study on the recently discovered (Li1-xFex)OHFe1-ySe single crystals, which have high Tc~40 K and share similar Fermi surface topology as AxFe2-ySe2, but are free from the sample complications. We found that the ambient-pressure Tc~41 K is suppressed gradually to below 2 K upon increasing pressure to Pc ~5 GPa, above which a SC-II phase with higher Tc emerges and the Tc increases progressively to above 50 K up to 12.5 GPa. Interestingly, our high-precision resistivity data enable us to uncover the sharp transition of the normal state from a Fermi liquid for SC-I phase (0 < P < 5 GPa) to a non-Fermi-liquid for SC-II phase (P > 5GPa). In addition, the reemergence of high-Tc SC-II phase is found to accompany with a concurrent enhancement of electron carrier density. Since high-pressure structural study based on the synchrotron X-ray diffraction rules out the structural transition below 10 GPa, the observed SC-II phase with enhanced carrier density should be ascribed to an electronic origin associated with a pressure-induced Fermi surface reconstruction.
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Submitted 20 July, 2017;
originally announced July 2017.
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Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4
Authors:
Y. M. Xie,
Z. R. Yang,
L. Li,
L. H. Yin,
X. B. Hu,
Y. L. Huang,
H. B. Jian,
W. H. Song,
Y. P. Sun,
S. Q. Zhou,
Y. H. Zhang
Abstract:
The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a ty…
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The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect.
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Submitted 29 December, 2012;
originally announced December 2012.
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Structural Phase Transformations in Iron-Chalcogen under High Pressures
Authors:
Andrew K. Stemshorn,
Yogesh K. Vohra,
Phillip M. Wu,
F. C. Hsu,
Y. L. Huang,
M. K. Wu,
K. W. Yeh
Abstract:
We report high pressure structural phase transformation sequence in a layered Iron-based superconducting compound FeSe0.3Te0.7 to 31 GPa at room temperature. The ambient pressure PbO type tetragonal phase (Space Group - P4/nmm) transforms to a monoclinic phase (Space group - P21/m) at a pressure of 7.3 \pm 0.9 GPa. This monoclinic phase is similar to the one observed below 100 K at ambient pressur…
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We report high pressure structural phase transformation sequence in a layered Iron-based superconducting compound FeSe0.3Te0.7 to 31 GPa at room temperature. The ambient pressure PbO type tetragonal phase (Space Group - P4/nmm) transforms to a monoclinic phase (Space group - P21/m) at a pressure of 7.3 \pm 0.9 GPa. This monoclinic phase is similar to the one observed below 100 K at ambient pressure. On further increase of pressure above 12 GPa, a transformation to an amorphous phase is observed that is completed by 20 GPa. The amorphous phase is found to be stable to the highest pressure of 31 GPa. This structural sequence of tetragonal \to monoclinic \to amorphous phase transformation appears to be a common feature of iron-based layered superconductors under compression. The pressure induced structural phase transformations are likely to play a key role in the superconductivity in these materials at high pressures.
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Submitted 4 May, 2011;
originally announced May 2011.
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Superconducting FeSe1-xTex Single Crystals Grown by Optical Zone-Melting Technique
Authors:
K. W. Yeh,
C. T. Ke,
T. W. Huang,
T. K. Chen,
Y. L. Huang,
P. M. Wu,
M. K. Wu
Abstract:
A new approach to grow FeSe1-xTex single crystals with optical zone-melting technique was successfully employed. Crystals with actual composition 0.4 < x < 1.0 all show high crystallinity with no phase separation. The ability to visually observe the locally heated melt, and ease of use and control of the image furnace make this method a promising and time-efficient way for obtaining high-quality…
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A new approach to grow FeSe1-xTex single crystals with optical zone-melting technique was successfully employed. Crystals with actual composition 0.4 < x < 1.0 all show high crystallinity with no phase separation. The ability to visually observe the locally heated melt, and ease of use and control of the image furnace make this method a promising and time-efficient way for obtaining high-quality FeSe1-xTex crystals. Our results indicate that with adequate heat treatment, the non-uniform distribution of Se and Te atoms in crystal lattice can be effectively eliminated, while the transition width of superconductivity can be reduced to about 2 K, which suggest the crystals are homogeneous in nature.
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Submitted 20 August, 2009;
originally announced August 2009.
