Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors
Authors:
M. Casalino,
U. Sassi,
I. Goykhman,
A. Eiden,
E. Lidorikis,
S. Milana,
D. De Fazio,
F. Tomarchio,
M. Iodice,
G. Coppola,
A. C. Ferrari
Abstract:
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wave…
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We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity~20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars
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Submitted 8 July, 2017;
originally announced August 2017.
