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CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer
Authors:
Zihao Yang,
Xiucheng Wei,
Pinku Roy,
Di Zhang,
Ping Lu,
Samyak Dhole,
Haiyan Wang,
Nicholas Cucciniello,
Nag Patibandla,
Zhebo Chen,
Hao Zeng,
Quanxi Jia,
Mingwei Zhu
Abstract:
We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resoluti…
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We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.
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Submitted 10 August, 2024;
originally announced August 2024.
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Hysteresis loops in spinor BECs subject to synthetic gauge fields
Authors:
Shuji Jia,
Jintao Xu,
Qian Jia,
Haibo Qiu,
Antonio Muñoz Mateo
Abstract:
We explore the hysteretic dynamics of spinor Bose-Einstein condensates of ultracold atoms loaded in static 2D ring geometries and subjected to varying synthetic magnetic fields. Electrically neutral, pseudo-spin-$1/2$ condensates are probed by one-component weak-link potentials that make available paths for the transit of vortices into and out of the ring in both components, and thus can control t…
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We explore the hysteretic dynamics of spinor Bose-Einstein condensates of ultracold atoms loaded in static 2D ring geometries and subjected to varying synthetic magnetic fields. Electrically neutral, pseudo-spin-$1/2$ condensates are probed by one-component weak-link potentials that make available paths for the transit of vortices into and out of the ring in both components, and thus can control the number of flux quanta threading the ring hole. For perpendicular fields, domain walls that are dynamically generated in the relative phase of the spin components are shown to play a key role in driving the hysteretic behaviour of the whole system through changes in the net magnetic flux. In the presence of spin-orbit-coupling, hysteresis is exhibited around the phase transitions found by the metastable current states for varying fields.
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Submitted 7 August, 2024;
originally announced August 2024.
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Symmetry TFT for Subsystem Symmetry
Authors:
Weiguang Cao,
Qiang Jia
Abstract:
We generalize the idea of symmetry topological field theory (SymTFT) for subsystem symmetry. We propose the 2-foliated BF theory with level $N$ in $(3+1)$d as subsystem SymTFT for subsystem $\mathbb Z_N$ symmetry in $(2+1)$d. Focusing on $N=2$, we investigate various topological boundaries. The subsystem Kramers-Wannier and Jordan-Wigner dualities can be viewed as boundary transformations of the s…
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We generalize the idea of symmetry topological field theory (SymTFT) for subsystem symmetry. We propose the 2-foliated BF theory with level $N$ in $(3+1)$d as subsystem SymTFT for subsystem $\mathbb Z_N$ symmetry in $(2+1)$d. Focusing on $N=2$, we investigate various topological boundaries. The subsystem Kramers-Wannier and Jordan-Wigner dualities can be viewed as boundary transformations of the subsystem SymTFT and are included in a larger duality web from the subsystem $SL(2,\mathbb Z_2)$ symmetry of the bulk foliated BF theory. Finally, we construct the condensation defects and twist defects of $S$-transformation in the subsystem $SL(2,\mathbb Z_2)$, from which the fusion rule of subsystem non-invertible operators can be recovered.
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Submitted 8 April, 2024; v1 submitted 2 October, 2023;
originally announced October 2023.
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Gap solitons and nonlinear Bloch states in Bose-Einstein condensates with current-dependent interactions
Authors:
Jintao Xu,
Qian Jia,
Haibo Qiu,
Antonio Muñoz Mateo
Abstract:
We show how the chiral properties of Bose Einstein condensates subject to current-density interactions and loaded in optical lattices can be observed in the realization of nonlinear Bloch states, whose spectrum lacks the usual periodic structure. Chirality is also manifested by spatially localized states, or gap solitons, which are found for positive rotation rates of the lattice at the energy gap…
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We show how the chiral properties of Bose Einstein condensates subject to current-density interactions and loaded in optical lattices can be observed in the realization of nonlinear Bloch states, whose spectrum lacks the usual periodic structure. Chirality is also manifested by spatially localized states, or gap solitons, which are found for positive rotation rates of the lattice at the energy gaps between the linear energy bands, whereas for negative rotations they appear in the semi-infinite gap of the linear spectrum. The stability of extended and localized states is checked through the spectrum of linear excitations and nonlinear time evolution of perturbed states, and the phenomenon of Bloch oscillations is explored. Our results are obtained in quasi 1D ring geometries with feasible experimental parameters.
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Submitted 20 October, 2023; v1 submitted 18 June, 2023;
originally announced June 2023.
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Prediction of surface reconstructions using MAGUS
Authors:
Yu Han,
Junjie Wang,
Chi Ding,
Hao Gao,
Shuning Pan,
Qiuhan Jia,
Jian Sun
Abstract:
In this paper, we present a new module to predict the potential surface reconstruction configurations of given surface structures in the framework of our machine learning and graph theory assisted universal structure searcher (MAGUS). In addition to random structures generated with specific lattice symmetry, we made full use of bulk materials to obtain a better distribution of population energy, n…
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In this paper, we present a new module to predict the potential surface reconstruction configurations of given surface structures in the framework of our machine learning and graph theory assisted universal structure searcher (MAGUS). In addition to random structures generated with specific lattice symmetry, we made full use of bulk materials to obtain a better distribution of population energy, namely, randomly appending atoms to a surface cleaved from bulk structures or moving/removing some of the atoms on the surface, which is inspired by natural surface reconstruction processes. In addition, we borrowed ideas from cluster predictions to spread structures better between different compositions, considering that surface models of different atom numbers usually have some building blocks in common. To validate this newly developed module, we tested it with studies on the surface reconstructions of Si (100), Si (111) and 4H-SiC(1-102)-c(2x2), respectively. We successfully gave the known ground states as well as a new SiC surface model in an extremely Si-rich environment.
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Submitted 22 December, 2022;
originally announced December 2022.
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Soliton collisions in Bose-Einstein condensates with current-dependent interactions
Authors:
Qian Jia,
Haibo Qiu,
Antonio Muñoz Mateo
Abstract:
We study general collisions between chiral solitons in Bose-Einstein condensates subject to combined attractive and current-dependent interatomic interactions. A simple analysis based on the linear superposition of the solitons allows us to determine the relevant time and space scales of the dynamics, which is illustrated by extensive numerical simulations. By varying the differential amplitude, t…
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We study general collisions between chiral solitons in Bose-Einstein condensates subject to combined attractive and current-dependent interatomic interactions. A simple analysis based on the linear superposition of the solitons allows us to determine the relevant time and space scales of the dynamics, which is illustrated by extensive numerical simulations. By varying the differential amplitude, the relative phase, the average velocity, and the relative velocity of the solitons, we characterize the different dynamical regimes that give rise to oscillatory and interference phenomena. Apart from the known inelastic character of the collisions, we show that the chiral dynamics involves an amplitude reduction with respect to the case of regular solitons. To compare with feasible ultracold gas experiments, the influence of harmonic confinement is analyzed in both the emergence and the interaction of chiral solitons.
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Submitted 21 August, 2022;
originally announced August 2022.
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Atomic-scale identification of the active sites of nanocatalysts
Authors:
Yao Yang,
Jihan Zhou,
Zipeng Zhao,
Geng Sun,
Saman Moniri,
Colin Ophus,
Yongsoo Yang,
Ziyang Wei,
Yakun Yuan,
Cheng Zhu,
Qiang Sun,
Qingying Jia,
Hendrik Heinz,
Jim Ciston,
Peter Ercius,
Philippe Sautet,
Yu Huang,
Jianwei Miao
Abstract:
Alloy nanocatalysts have found broad applications ranging from fuel cells to catalytic converters and hydrogenation reactions. Despite extensive studies, identifying the active sites of nanocatalysts remains a major challenge due to the heterogeneity of the local atomic environment. Here, we advance atomic electron tomography to determine the 3D local atomic structure, surface morphology and chemi…
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Alloy nanocatalysts have found broad applications ranging from fuel cells to catalytic converters and hydrogenation reactions. Despite extensive studies, identifying the active sites of nanocatalysts remains a major challenge due to the heterogeneity of the local atomic environment. Here, we advance atomic electron tomography to determine the 3D local atomic structure, surface morphology and chemical composition of PtNi and Mo-doped PtNi nanocatalysts. Using machine learning trained by density functional theory calculations, we identify the catalytic active sites for the oxygen reduction reaction from experimental 3D atomic coordinates, which are corroborated by electrochemical measurements. By quantifying the structure-activity relationship, we discover a local environment descriptor to explain and predict the catalytic active sites at the atomic level. The ability to determine the 3D atomic structure and chemical species coupled with machine learning is expected to expand our fundamental understanding of a wide range of nanocatalysts.
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Submitted 18 February, 2022;
originally announced February 2022.
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Transient Higgs oscillations and high-order nonlinear light-Higgs coupling in terahertz-wave drivenNbN superconductor
Authors:
Z. X. Wang,
J. R. Xue,
H. K. Shi,
X. Q. Jia,
T. Lin,
L. Y. Shi,
T. Dong,
F. Wang,
N. L. Wang
Abstract:
We study the nonlinear optical response in a superconducting NbN thin film with strong terahertz (THz)wave. Besides the expected third harmonic generation, we observe a new transient oscillation which softensin frequency with temperature increasing towards superconducting transition temperatureTc. We identify thisnew mode as the Higgs transient oscillation. To verify this proposal, we introduce a…
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We study the nonlinear optical response in a superconducting NbN thin film with strong terahertz (THz)wave. Besides the expected third harmonic generation, we observe a new transient oscillation which softensin frequency with temperature increasing towards superconducting transition temperatureTc. We identify thisnew mode as the Higgs transient oscillation. To verify this proposal, we introduce a time-frequency resolvedtechnique, named spectrogram for visualizing THz spectrum. The dynamic decaying behavior of the mode isobserved, which is consistent with theoretical expectation about intrinsic Higgs oscillation. Moreover, a higherorder nonlinear optics effect,i.e.fifth harmonic generation, has been observed for the first time, which we assignto the higher order coupling between Higgs mode and electromagn
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Submitted 15 July, 2021;
originally announced July 2021.
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Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
Authors:
Zhonghai Yu,
Xiucheng Wei,
Yixiong Zheng,
Haolei Hui,
Mengying Bian,
Samyak Dhole,
Jung-Hun Seo,
Yi-Yang Sun,
Quanxi Jia,
Shengbai Zhang,
Sen Yang,
Hao Zeng
Abstract:
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Here…
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Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopies. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. The fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.
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Submitted 16 April, 2021; v1 submitted 20 February, 2021;
originally announced February 2021.
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Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Authors:
Yixiong Zheng,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Samyak Dhole,
Quanxi Jia,
Hongping Zhao,
Jung-Hun Seo
Abstract:
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as…
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In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown b-Ga2O3 samples with different orientation ([100] and [001]) were used and successfully create 1.2 um thick b-Ga2O3 NMs without any physical damages. These b-Ga2O3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC substrate and polyimide substrate. Various material characterizations were performed to investigate the crystal quality, surface morphology, optical property, mechanical property, and bandgap before and after the lift-off and revealed that good material quality is maintained. This result offers several benefits in that the thickness, doping, and size of b-Ga2O3 NMs can be fully controlled. Moreover, more advanced b-Ga2O3-based NM structures such as (AlxGa1-x)2O3/Ga2O3 heterostructure NMs can be directly created from their bulk epitaxy substrates thus this result provides a viable route for the realization of high performance b-Ga2O3 NM-based electronics and optoelectronics that can be built on various substrates and platforms.
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Submitted 11 February, 2021;
originally announced February 2021.
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Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics
Authors:
Xiucheng Wei,
Haolei Hui,
Samanthe Perera,
Aaron Sheng,
David F. Watson,
Yi-Yang Sun,
Quanxi Jia,
Shengbai Zhang,
Hao Zeng
Abstract:
BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal…
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BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single junction solar cell. Here we report the synthesis of Ba(Zr1-xTix)S3 perovskite compounds with a reduced band gap. It is found that Ti alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 at% alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.
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Submitted 8 April, 2020;
originally announced April 2020.
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Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control
Authors:
Xiaoning Wang,
Zexin Feng,
Peixin Qin,
Han Yan,
Xiaorong Zhou,
Huixin Guo,
Zhaoguogang Leng,
Weiqi Chen,
Qiannan Jia,
Zexiang Hu,
Haojiang Wu,
Xin Zhang,
Chengbao Jiang,
Zhiqi Liu
Abstract:
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic…
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Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.
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Submitted 15 October, 2019;
originally announced October 2019.
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Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics
Authors:
Xiucheng Wei,
Haolei Hui,
Chuan Zhao,
Chenhua Deng,
Mengjiao Han,
Zhonghai Yu,
Aaron Sheng,
Pinku Roy,
Aiping Chen,
Junhao Lin,
David F. Watson,
Yiyang Sun,
Tim Thomay,
Sen Yang,
Quanxi Jia,
Shengbai Zhang,
Hao Zeng
Abstract:
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we repo…
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BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
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Submitted 19 November, 2019; v1 submitted 11 October, 2019;
originally announced October 2019.
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Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites
Authors:
W. Pan,
P. Lu,
J. F. Ihlefeld,
S. R. Lee,
E. S. Choi,
Y. Jiang,
Q. X. Jia
Abstract:
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically-aligned L…
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Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically-aligned La_{2/3}Sr_{1/3}MnO_3:ZnO nanocomposites, in which La_{2/3}Sr_{1/3}MnO_3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic (B), and optical properties. In this paper, we show the results of electrical current induced magnetic hysteresis in magneto-resistance measurements in these nano-pillar composites. We observe that when the current level is low, for example, 1 uA, the magneto-resistance displays a linear, negative, non-hysteretic B field dependence. Surprisingly, when a large current is used, I > 10 uA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. A possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.
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Submitted 5 February, 2018;
originally announced February 2018.
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Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
Authors:
Z. Li,
E. Z. Xu,
Y. Losovyj,
N. Li,
A. P. Chen,
B. Swartzentruber,
N. Sinitsyn,
J. K. Yoo,
Q. X. Jia,
S. X. Zhang
Abstract:
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity t…
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The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere yields rapid oxidation of the surface within only one minute. Characterizations of electrical conductivity σ, thermopower S, and thermal conductivity \k{appa} were performed on the same In-doped nanowire which shows suppressed σ and \k{appa} but enhanced S yielding an improved thermoelectric figure of merit ZT than the undoped SnTe.
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Submitted 2 August, 2017; v1 submitted 10 May, 2017;
originally announced May 2017.
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Photoinduced coherent acoustic phonon dynamics inside Mott insulator Sr2IrO4 films observed by femtosecond X-ray pulses
Authors:
Bing-Bing Zhang,
Jian Liu,
Xu Wei,
Da-Rui Sun,
Quan-Jie Jia,
Yuelin Li,
Ye Tao
Abstract:
We investigate the transient photoexcited lattice dynamics in a layered perovskite Mott insulator Sr2IrO4 by femtosecond X-ray diffraction using a laser plasma-based X-ray source. Ultrafast structural dynamics of Sr2IrO4 thin films are determined by observing the shift and broadening of the (0012) Bragg diffraction after excitation by 1.5 eV and 3.0 eV pump photons for films with different thickne…
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We investigate the transient photoexcited lattice dynamics in a layered perovskite Mott insulator Sr2IrO4 by femtosecond X-ray diffraction using a laser plasma-based X-ray source. Ultrafast structural dynamics of Sr2IrO4 thin films are determined by observing the shift and broadening of the (0012) Bragg diffraction after excitation by 1.5 eV and 3.0 eV pump photons for films with different thicknesses. The observed transient lattice response can be well interpreted as a distinct three-step dynamics due to the propagation of coherent acoustic phonons generated by the photoinduced quasiparticles (QP). Employing a normalized phonon propagation model, we found that the photoinduced angular shifts of the Bragg peak collapse into a universal curve after introducing a normalized coordinates to account for different thicknesses and pump photon energies, pinpointing the origin of the lattice distortion and its early evolution. In addition, a transient photocurrent measurement indicates that the photoinduced QPs are charge neutral excitons. Mapping the phonon propagation and correlating its dynamics with the QP by ultrafast X-ray diffraction (UXRD) establish a powerful way to study electron-phonon coupling and uncover the exotic physics in strongly correlated systems under nonequilibrium conditions.
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Submitted 5 April, 2017;
originally announced April 2017.
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Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2
Authors:
Rui Wang,
ZhongXue Huang,
Shuang Yu,
G. Q. Zhao,
Zheng Deng,
Changqing Jin,
Quanjie Jia,
Yu Chen,
TieYing Yang,
Xiaoming Jiang,
Lixin Cao
Abstract:
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films…
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Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.
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Submitted 24 February, 2017;
originally announced February 2017.
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Enhanced Structural Stability and Photo Responsiveness of CH3NH3SnI3 Perovskite via Pressure-Induced Amorphization and Recrystallization
Authors:
Xujie Lü,
Yonggang Wang,
Constantinos C. Stoumpos,
Qingyang Hu,
Xiaofeng Guo,
Haijie Chen,
Liuxiang Yang,
Jesse S. Smith,
Wenge Yang,
Yusheng Zhao,
Hongwu Xu,
Mercouri G. Kanatzidis,
Quanxi Jia
Abstract:
An organic-inorganic halide perovskite of CH3NH3SnI3 with significantly improved structural stability is obtained via pressure-induced amorphization and recrystallization. In situ high-pressure resistance measurements reveal an increased electrical conductivity by 300% in the pressure-treated perovskite. Photocurrent measurements also reveal a substantial enhancement in visible-light responsivenes…
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An organic-inorganic halide perovskite of CH3NH3SnI3 with significantly improved structural stability is obtained via pressure-induced amorphization and recrystallization. In situ high-pressure resistance measurements reveal an increased electrical conductivity by 300% in the pressure-treated perovskite. Photocurrent measurements also reveal a substantial enhancement in visible-light responsiveness. The mechanism underlying the enhanced properties is demonstrated to be associated with the improved structural stability.
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Submitted 5 December, 2016;
originally announced December 2016.
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Conducting interface in oxide homojunction: understanding of superior properties in black TiO2
Authors:
Xujie Lu,
Aiping Chen,
Yongkang Luo,
Ping Lu,
Yaomin Dai,
Erik Enriquez,
Paul Dowden,
Hongwu Xu,
Paul G. Kotula,
Abul K. Azad,
Dmitry A. Yarotski,
Rohit P. Prasankumar,
Antoinette J. Taylor,
Joe D. Thompson,
Quanxi Jia
Abstract:
Black TiO2 nanoparticles with a crystalline-core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO2 homojunction films consisting of an oxygen-deficient amorph…
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Black TiO2 nanoparticles with a crystalline-core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO2 homojunction films consisting of an oxygen-deficient amorphous layer on top of a highly crystalline layer, to simulate the structural/functional configuration of black TiO2 nanoparticles. Metallic conduction is achieved at the crystalline-amorphous homointerface via electronic interface reconstruction, which we show to be the main reason for the superior properties of black TiO2. This work not only achieves an unprecedented understanding of black TiO2, but also provides a new perspective for investigating carrier generation and transport behavior at oxide interfaces, which are of tremendous fundamental and technological interest.
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Submitted 3 December, 2016;
originally announced December 2016.
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Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties
Authors:
Wencao Yang,
Yuantao Xie,
Wenka Zhu,
Kyungwha Park,
Aiping Chen,
Yaroslav Losovyj,
Zhen Li,
Haoming Liu,
Matthew Starr,
Jaime A. Acosta,
Chenggang Tao,
Nan Li,
Quanxi Jia,
Jean J. Heremans,
Shixiong Zhang
Abstract:
While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir2O7. The films were epitaxially grown on yttria-st…
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While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir2O7. The films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of Bi_Ir antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance.
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Submitted 28 July, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
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Field dependent magnetization of BiFeO3 in ultrathin La0.7Sr0.3MnO3/BiFeO3 superlattice
Authors:
Surendra Singh,
J. Xiong,
A. P. Chen,
M. R. Fitzsimmons,
Q. X. Jia
Abstract:
We report the observation of field-induced magnetization of BiFeO3 (BFO) in an ultrathin BFO/La0.7Sr0.3MnO3 (LSMO) superlattice using polarized neutron reflectivity (PNR). Our PNR results indicate parallel alignment of magnetization across BFO/LSMO interfaces. The study showed an increase in average magnetization on increasing applied magnetic field at 10K. We observed a saturation magnetization o…
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We report the observation of field-induced magnetization of BiFeO3 (BFO) in an ultrathin BFO/La0.7Sr0.3MnO3 (LSMO) superlattice using polarized neutron reflectivity (PNR). Our PNR results indicate parallel alignment of magnetization across BFO/LSMO interfaces. The study showed an increase in average magnetization on increasing applied magnetic field at 10K. We observed a saturation magnetization of 110 \pm 15 kA/m (~0.8 μB/Fe) for ultrathin BFO layer (~2 unit cell) sandwiched between ultrathin LSMO layers (~ 2 unit cell), which is much higher than the canted moment (0.03 μB/Fe) in the bulk BFO. The macroscopic VSM results on superlattice clearly indicate superparamagnetic behavior typically observed in nanoparticles of manganites.
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Submitted 10 August, 2015;
originally announced August 2015.
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Using ultrashort optical pulses to couple ferroelectric and ferromagnetic order in an oxide heterostructure
Authors:
Y. M. Sheu,
S. A. Trugman,
L. Yan,
Q. X. Jia,
A. J. Taylor,
R. P. Prasankumar
Abstract:
A new approach to all-optical detection and control of the coupling between electric and magnetic order on ultrafast timescales is achieved using time-resolved second harmonic generation (SHG) to study a ferroelectric (FE)/ferromagnet (FM) oxide heterostructure. We use femtosecond optical pulses to modify the spin alignment in a Ba$_{0.1}$Sr$_{0.9}$TiO$_{3}$(BSTO)/La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (LC…
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A new approach to all-optical detection and control of the coupling between electric and magnetic order on ultrafast timescales is achieved using time-resolved second harmonic generation (SHG) to study a ferroelectric (FE)/ferromagnet (FM) oxide heterostructure. We use femtosecond optical pulses to modify the spin alignment in a Ba$_{0.1}$Sr$_{0.9}$TiO$_{3}$(BSTO)/La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (LCMO) heterostructure and selectively probe the ferroelectric response using SHG. In this heterostructure, the pump pulses photoexcite non-equilibrium quasiparticles in LCMO, which rapidly interact with phonons before undergoing spin-lattice relaxation on a timescale of tens of picoseconds. This reduces the spin-spin interactions in LCMO, applying stress on BSTO through magnetostriction. This then modifies the FE polarization through the piezoelectric effect, on a timescale much faster than laser-induced heat diffusion from LCMO to BSTO. We have thus demonstrated an ultrafast indirect magnetoelectric effect in a FE/FM heterostructure mediated through elastic coupling, with a timescale primarily governed by spin-lattice relaxation in the FM layer.
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Submitted 8 January, 2015;
originally announced January 2015.
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Synthetic magnetoelectric coupling in a nanocomposite multiferroic
Authors:
P. Jain,
Q. Wang,
M. Roldan,
A. Glavic,
V. Lauter,
C. Urban,
Z. Bi,
T. Ahmed,
J. Zhu,
M. Varela,
Q. Jia,
M. R. Fitzsimmons
Abstract:
Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order parameters. Despite having antiferro-magnetic order, BiFeO3 (BFO) has nevertheless been a key material in this quest due to excel-lent ferroelectric properties at roo…
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Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order parameters. Despite having antiferro-magnetic order, BiFeO3 (BFO) has nevertheless been a key material in this quest due to excel-lent ferroelectric properties at room temperature. We studied a superlattice composed of 8 repetitions of 6 unit cells of La0.7Sr0.3MnO3 (LSMO) grown on 5 unit cells of BFO. Significant net uncompensated magnetization in BFO is demonstrated using polarized neutron reflectometry in an insulating superlattice. Remarkably, the magnetization enables magnetic field to change the dielectric properties of the superlattice, which we cite as an example of synthetic magnetoelectric coupling. Importantly, this controlled creation of magnetic moment in BFO suggests a much needed path forward for the design and implementation of integrated oxide devices for next generation magnetoelectric data storage platforms.
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Submitted 11 September, 2014; v1 submitted 30 July, 2014;
originally announced July 2014.
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Induced magnetization in La$_{0.7}$Sr$_{0.3}$MnO$_3$/BiFeO$_3$ superlattices
Authors:
S. Singh,
J. T. Haraldsen,
J. Xiong,
E. M. Choi,
P. Lu,
D. Yi,
X. -D. Wen,
J. Liu,
H. Wang,
Z. Bi,
P. Yu,
M. R. Fitzsimmons,
J. L. MacManus-Driscoll,
R. Ramesh,
A. V. Balatsky,
Jian-Xin Zhu,
Q. X. Jia
Abstract:
Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering…
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Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering a classical exchange field between the LSMO and BFO layers, we further show that magnetization is expected to extend throughout the BFO, which provides a theoretical explanation for the results of the neutron scattering experiment.
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Submitted 2 July, 2014;
originally announced July 2014.
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Polaronic transport induced by competing interfacial magnetic order in a La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/BiFeO$_{3}$ heterostructure
Authors:
Y. M. Sheu,
S. A. Trugman,
L. Yan,
J. Qi,
Q. X. Jia,
A. J. Taylor,
R. P. Prasankumar
Abstract:
Using ultrafast optical spectroscopy, we show that polaronic behavior associated with interfacial antiferromagnetic order is likely the origin of tunable magnetotransport upon switching the ferroelectric polarity in a La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/BiFeO$_{3}$ (LCMO/BFO) heterostructure. This is revealed through the difference in dynamic spectral weight transfer between LCMO and LCMO/BFO at low tem…
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Using ultrafast optical spectroscopy, we show that polaronic behavior associated with interfacial antiferromagnetic order is likely the origin of tunable magnetotransport upon switching the ferroelectric polarity in a La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/BiFeO$_{3}$ (LCMO/BFO) heterostructure. This is revealed through the difference in dynamic spectral weight transfer between LCMO and LCMO/BFO at low temperatures, which indicates that transport in LCMO/BFO is polaronic in nature. This polaronic feature in LCMO/BFO decreases in relatively high magnetic fields due to the increased spin alignment, while no discernible change is found in the LCMO film at low temperatures. These results thus shed new light on the intrinsic mechanisms governing magnetoelectric coupling in this heterostructure, potentially offering a new route to enhancing multiferroic functionality.
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Submitted 19 February, 2014; v1 submitted 17 May, 2013;
originally announced May 2013.
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Adsorption of PTCDA and C60 on KBr(001): electrostatic interaction versus electronic hybridization
Authors:
Q. Jia,
W. Ji,
S. A. Burke,
H. J. Gao,
P. Grutter,
H. Guo
Abstract:
The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that…
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The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that alkali-halides is a competitive candidate to be adopted to support low polarizability molecules, such as PTCDA, in future electronics.
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Submitted 25 March, 2013;
originally announced March 2013.
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Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
Authors:
S. X. Zhang,
R. D. McDonald,
A. Shekhter,
Z. X. Bi,
Y. Li,
Q. X. Jia,
S. T. Picraux
Abstract:
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by…
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We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by Hikami-Larkin-Nagaoka theory. Our analysis suggests that in our system, a topological insulator, the elastic scattering time can be longer than the spin-orbit scattering time. We briefly discuss our results in the context of Dirac Fermion physics and 'quantum linear magnetoresistance'.
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Submitted 28 December, 2012;
originally announced December 2012.
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Photo-induced stabilization and enhancement of the ferroelectric polarization in Ba$_{0.1}$Sr$_{0.9}$TiO$_{3}$/La$_{0.7}$Ca(Sr)$_{0.3}$MnO$_{3}$ thin film heterostructures
Authors:
Y. M. Sheu,
S. A. Trugman,
L. Yan,
C. -P. Chuu,
Z. Bi,
Q. X. Jia,
A. J. Taylor,
R. P. Prasankumar
Abstract:
An emerging area in condensed matter physics is the use of multilayered heterostructures to enhance ferroelectricity in complex oxides. Here, we demonstrate that optically pumping carriers across the interface between thin films of a ferroelectric (FE) insulator and a ferromagnetic metal can significantly enhance the FE polarization. The photoinduced FE state remains stable at low temperatures for…
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An emerging area in condensed matter physics is the use of multilayered heterostructures to enhance ferroelectricity in complex oxides. Here, we demonstrate that optically pumping carriers across the interface between thin films of a ferroelectric (FE) insulator and a ferromagnetic metal can significantly enhance the FE polarization. The photoinduced FE state remains stable at low temperatures for over one day. This occurs through screening of the internal electric field by the photoexcited carriers, leading to a larger, more stable polarization state that may be suitable for applications in areas such as data and energy storage.
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Submitted 12 December, 2012;
originally announced December 2012.
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Evaluating the role of Lead In A Novel Ternary Catalysts For DMFCs
Authors:
Aditi Halder,
Qingying Jia,
Matthew Trahan,
Sanjeev Mukerjee
Abstract:
The current density at lower potential is highly desirable in fuel cell technology and crucial center point for designing a new catalyst. By alloying platinum with various other metals, the improvisation of the fuel cell catalyst has achieved a lot of attention and interests. In this article, a novel porous ternary alloy PtPb@Ru as anode catalysts for direct methanol fuel cell had been synthesized…
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The current density at lower potential is highly desirable in fuel cell technology and crucial center point for designing a new catalyst. By alloying platinum with various other metals, the improvisation of the fuel cell catalyst has achieved a lot of attention and interests. In this article, a novel porous ternary alloy PtPb@Ru as anode catalysts for direct methanol fuel cell had been synthesized by micro-emulsion technique. The catalysts had been characterized by various spectroscopic and microscopic techniques. The activity and durability of the catalysts had been tested by running cyclic voltammetry in 0.1 M HClO4 and 1M Methanol. To explain the many fold increase in current density of the PtPb@Ru catalysts in comparison to the commercial available PtRu catalysts, in situ X-ray absorption spectroscopy (XAS) measurements, at the PtL3 edge (XANES and EXAFS) were carried out on the PtPb@Ru catalysts in an electrochemical cell. The down-shift in the d-band center of platinum observed in the XAS study, might be responsible for the better activity and high current density observed here.
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Submitted 28 September, 2012;
originally announced September 2012.
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Coexistence of coupled magnetic phases in epitaxial TbMnO3 films revealed by ultrafast optical spectroscopy
Authors:
J. Qi,
L. Yan,
H. D. Zhou,
J. -X. Zhu,
S. A. Trugman,
A. J. Taylor,
Q. X. Jia,
R. P. Prasankumar
Abstract:
Ultrafast optical pump-probe spectroscopy is used to reveal the coexistence of coupled antiferromagnetic/ferroelectric and ferromagnetic orders in multiferroic TbMnO3 films through their time domain signatures. Our observations are explained by a theoretical model describing the coupling between reservoirs with different magnetic properties. These results can guide researchers in creating new kind…
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Ultrafast optical pump-probe spectroscopy is used to reveal the coexistence of coupled antiferromagnetic/ferroelectric and ferromagnetic orders in multiferroic TbMnO3 films through their time domain signatures. Our observations are explained by a theoretical model describing the coupling between reservoirs with different magnetic properties. These results can guide researchers in creating new kinds of multiferroic materials that combine coupled ferromagnetic, antiferromagnetic and ferroelectric properties in one compound.
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Submitted 13 September, 2012; v1 submitted 5 July, 2012;
originally announced July 2012.
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Ultrafast carrier dynamics and radiative recombination in multiferroic BiFeO$_{3}$
Authors:
Y. M. Sheu,
S. A. Trugman,
Y. -S. Park,
S. Lee,
H. T. Yi,
S. -W. Cheong,
Q. X. Jia,
A. J. Taylor,
R. P. Prasankumar
Abstract:
We report a comprehensive study of ultrafast carrier dynamics in single crystals of multiferroic BiFeO$_{3}$. Using femtosecond optical pump-probe spectroscopy, we find that the photoexcited electrons relax to the conduction band minimum through electron-phonon coupling with a $\sim$1 picosecond time constant that does not significantly change across the antiferromagnetic transition. Photoexcited…
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We report a comprehensive study of ultrafast carrier dynamics in single crystals of multiferroic BiFeO$_{3}$. Using femtosecond optical pump-probe spectroscopy, we find that the photoexcited electrons relax to the conduction band minimum through electron-phonon coupling with a $\sim$1 picosecond time constant that does not significantly change across the antiferromagnetic transition. Photoexcited electrons subsequently leave the conduction band and primarily decay via radiative recombination, which is supported by photoluminescence measurements. We find that despite the coexisting ferroelectric and antiferromagnetic orders in BiFeO$_{3}$, the intrinsic nature of this charge-transfer insulator results in carrier relaxation similar to that observed in bulk semiconductors.
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Submitted 12 February, 2012;
originally announced February 2012.
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Optical tuning and ultrafast dynamics of high-temperature superconducting terahertz metamaterials
Authors:
Ranjan Singh,
Jie Xiong,
Abul K. Azad,
Hao Yang,
Stuart A. Trugman,
Q. X. Jia,
Antoinette J. Taylor,
Hou-Tong Chen
Abstract:
Through the integration of semiconductors or complex oxides into metal resonators, tunable metamaterials have been achieved by a change of environment using an external stimulus. Metals provide high conductivity to realize a strong resonant response in metamaterials; however, they contribute very little to the tunability. The complex conductivity in high-temperature superconducting films is highly…
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Through the integration of semiconductors or complex oxides into metal resonators, tunable metamaterials have been achieved by a change of environment using an external stimulus. Metals provide high conductivity to realize a strong resonant response in metamaterials; however, they contribute very little to the tunability. The complex conductivity in high-temperature superconducting films is highly sensitive to external perturbations, which provides new opportunities in achieving tunable metamaterials resulting directly from the resonant elements. Here we demonstrate ultrafast dynamical tuning of resonance in the terahertz (THz) frequency range in YBa_2Cu_3O_7-δ(YBCO) split-ring resonator arrays excited by near-infrared femtosecond laser pulses. The photoexcitation breaks the superconducting Cooper pairs to create the quasiparticle state. This dramatically modifies the imaginary part of the complex conductivity and consequently the metamaterial resonance in an ultrafast timescale. We observed resonance switching accompanied with a wide range frequency tuning as a function of photoexcitation fluence, which also strongly depend on the nano-scale thickness of the superconducting films. All of our experimental results are well reproduced through calculations using an analytical model, which takes into account the SRR resistance and kinetic inductance contributed from the complex conductivity of YBCO films. The theoretical calculations reveal that the increasing SRR resistance upon increasing photoexcitation fluence is responsible for the reduction of resonance strength, and both the resistance and kinetic inductance contribute to the tuning of resonance frequency.
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Submitted 16 November, 2011;
originally announced November 2011.
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Thermal tunability in terahertz metamaterials fabricated on strontium titanate single crystal substrates
Authors:
Ranjan Singh,
Abul K. Azad,
Q. X. Jia,
Antoinette J. Taylor,
Hou-Tong Chen
Abstract:
We report an experimental demonstration of thermal tuning of resonance frequency in a planar terahertz metamaterial consisting of a gold split-ring resonator array fabricated on a bulk single crystal strontium titanate (SrTiO3) substrate. Cooling the metamaterial starting from 409 K down to 150 K causes about 50% shift in resonance frequency as compare to its room temperature resonance, and there…
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We report an experimental demonstration of thermal tuning of resonance frequency in a planar terahertz metamaterial consisting of a gold split-ring resonator array fabricated on a bulk single crystal strontium titanate (SrTiO3) substrate. Cooling the metamaterial starting from 409 K down to 150 K causes about 50% shift in resonance frequency as compare to its room temperature resonance, and there is very little variation in resonance strength. The resonance shift is due to the temperature-dependent refractive index (or the dielectric constant) of the strontium titanate. The experiment opens up avenues for designing tunable terahertz devices by exploiting the temperature sensitive characteristic of high dielectric constant substrates and complex metal oxide materials.
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Submitted 17 February, 2011;
originally announced February 2011.
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Tuning the Resonance in High Temperature Superconducting Terahertz Metamaterials
Authors:
Hou-Tong Chen,
Hao Yang,
Ranjan Singh,
John F. O'Hara,
Abul K. Azad,
Stuart A. Trugman,
Q. X. Jia,
Antoinette J. Taylor
Abstract:
In this Letter we present resonance properties in terahertz metamaterials consisting of a split-ring resonator array made from high temperature superconducting films. By varying the temperature, we observed efficient metamaterial resonance switching and frequency tuning with some features not revealed before. The results were well reproduced by numerical simulations of metamaterial resonance using…
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In this Letter we present resonance properties in terahertz metamaterials consisting of a split-ring resonator array made from high temperature superconducting films. By varying the temperature, we observed efficient metamaterial resonance switching and frequency tuning with some features not revealed before. The results were well reproduced by numerical simulations of metamaterial resonance using the experimentally measured complex conductivity of the superconducting film. We developed a theoretical model that explains the tuning features, which takes into account the resistive resonance damping and additional split-ring inductance contributed from both the real and imaginary parts of the temperature-dependent complex conductivity. The theoretical model further predicted more efficient resonance switching and frequency shifting in metamaterials consisting of a thinner superconducting split-ring resonator array, which were also verified in experiments.
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Submitted 8 September, 2010;
originally announced September 2010.
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Multiferroic Domain Dynamics in Strained Strontium Titanate
Authors:
A. Vasudevarao,
A. Kumar,
L. Tian,
J. H. Haeni,
Y. L. Li,
C-J Eklund,
Q. X. Jia,
R. Uecker,
P. Reiche,
K. Rabe,
L. Q. Chen,
D. G. Schlom,
V. Gopalan
Abstract:
Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centr…
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Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension by 0.94%. The results agree well with theoretical first principles and phase-field predictions. Direct imaging of domains arising from the ferroelectric phase transition, and its switching under electric fields is demonstrated using piezoelectric force microscopy. Nonlinear optics combined with phase-field modeling is used to show that the dominant multiferroic domain switching mechanism is through coupled 90 degree ferroelectric-ferroelastic domain wall motion. More broadly, these studies of coexisting ferroelectric (polar) and antiferrodistortive rotation (axial) phenomena could have relevance to multiferroics with coexisting ferroelectric (polar) and magnetic (axial) phenomena.
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Submitted 22 September, 2006;
originally announced September 2006.
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Strongly Enhanced Current Densities in Superconducting Coated Conductors of YBa2Cu3O7-x + BaZrO3
Authors:
J. L. MacManus-Driscoll,
S. R. Foltyn,
Q. X. Jia,
H. Wang,
A. Serquis,
L. Civale,
B. Maiorov,
M. E. Hawley,
M. P. Maley,
D. E. Peterson
Abstract:
There are numerous potential applications for superconducting tapes, based on YBa2Cu3O7-x (YBCO) films coated onto metallic substrates. A long established goal of more than 15 years has been to understand the magnetic flux pinning mechanisms which allow films to maintain high current densities out to high magnetic fields. In fact, films carry 1-2 orders of magnitude higher current densities than…
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There are numerous potential applications for superconducting tapes, based on YBa2Cu3O7-x (YBCO) films coated onto metallic substrates. A long established goal of more than 15 years has been to understand the magnetic flux pinning mechanisms which allow films to maintain high current densities out to high magnetic fields. In fact, films carry 1-2 orders of magnitude higher current densities than any other form of the material. For this reason, the idea of further improving pinning has received little attention. Now that commercialisation of conductors is much closer, for both better performance and lower fabrication costs, an important goal is to achieve enhanced pinning in a practical way. In this work, we demonstrate a simple and industrially scaleable route which yields a 1.5 to 5-fold improvement in the in-field current densities of already-high-quality conductors.
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Submitted 3 June, 2004;
originally announced June 2004.
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A Novel Dielectric Anomaly in Cuprates and Nickelates: Signature of an Electronic Glassy State
Authors:
Tuson Park,
Z. Nussinov,
K. R. A. Hazzard,
V. A. Sidorov,
A. V. Balatsky,
J. L. Sarrao,
S. -W. Cheong,
M. F. Hundley,
Jang-Sik Lee,
Q. X. Jia,
J. D. Thompson
Abstract:
The low-frequency dielectric response of hole-doped insulators La_{2}Cu_{1-x}Li_{x}O_{4} and La_{2-x}Sr_{x}NiO_{4} shows a large dielectric constant ε^{'} at high temperature and a step-like drop by a factor of 100 at a material-dependent low temperature T_{f}. T_{f} increases with frequency and the dielectric response shows universal scaling in a Cole-Cole plot, suggesting that a charge glass s…
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The low-frequency dielectric response of hole-doped insulators La_{2}Cu_{1-x}Li_{x}O_{4} and La_{2-x}Sr_{x}NiO_{4} shows a large dielectric constant ε^{'} at high temperature and a step-like drop by a factor of 100 at a material-dependent low temperature T_{f}. T_{f} increases with frequency and the dielectric response shows universal scaling in a Cole-Cole plot, suggesting that a charge glass state is realized both in the cuprates and in the nickelates.
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Submitted 19 April, 2004;
originally announced April 2004.
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Angular dependent vortex pinning mechanisms in YBCO coated conductors and thin films
Authors:
L. Civale,
B. Maiorov,
A. Serquis,
J. O. Willis,
J. Y. Coulter,
H. Wang,
Q. X. Jia,
P. N. Arendt,
J. L. MacManus-Driscoll,
M. P. Maley,
S. R. Foltyn
Abstract:
We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, b…
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We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors.
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Submitted 23 October, 2003;
originally announced October 2003.
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Nonequilibrium superconductivity in Y1-xPrxBa2Cu3O7 thin films
Authors:
R. D. Averitt,
V. K. Thorsmolle,
Q. X. Jia,
S. A. Trugman,
A. J. Taylor
Abstract:
We have measured the picosecond conductivity dynamics in Y1-xPrxBa2Cu3O7 thin films from 0.3-2.0 terahertz. Our experimental technique measures the complex conductivity $σ_{re}(ω$) + i$σ_{im}(ω$) permitting the simultaneous observation of superconducting pair and quasiparticle dynamics. We emphasize aspects of the conductivity dynamics which extend our previous results. In particular, the recove…
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We have measured the picosecond conductivity dynamics in Y1-xPrxBa2Cu3O7 thin films from 0.3-2.0 terahertz. Our experimental technique measures the complex conductivity $σ_{re}(ω$) + i$σ_{im}(ω$) permitting the simultaneous observation of superconducting pair and quasiparticle dynamics. We emphasize aspects of the conductivity dynamics which extend our previous results. In particular, the recovery of $σ_{re}$ is faster than $σ_{im}$, and the recovery of $σ_{im}$ decreases with increasing frequency. This suggests another carrier relaxation pathway, in addition to superconducting pair recovery, following optical excitation.
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Submitted 2 April, 2002;
originally announced April 2002.
