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Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$
Authors:
E. K. de Vries,
A. M. Kamerbeek,
N. Koirala,
M. Brahlek,
M. Salehi,
S. Oh,
B. J. van Wees,
T. Banerjee
Abstract:
Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained from efforts to electrically probe spin-momentum locking in the topological insulator Bi$_2$Se$_3$ using ferromagnetic contacts. Upon inverting the magnetization…
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Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained from efforts to electrically probe spin-momentum locking in the topological insulator Bi$_2$Se$_3$ using ferromagnetic contacts. Upon inverting the magnetization of the ferromagnetic contacts, we find a reversal of the measured voltage. Extensive analysis of the bias and temperature dependence of this voltage was done, considering the orientation of the magnetization relative to the current. Our findings indicate that the measured voltage can arise due to fringe-field-induced Hall voltages, different from current-induced spin polarization of the surface state charge carriers, as reported recently. Understanding the nontrivial origin of the measured voltage is important for realizing spintronic devices with topological insulators.
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Submitted 4 November, 2015; v1 submitted 28 October, 2015;
originally announced October 2015.
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Electric field control of spin lifetimes in Nb-SrTiO$_3$ by spin-orbit fields
Authors:
A. M. Kamerbeek,
P. Högl,
J. Fabian,
T. Banerjee
Abstract:
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $τ_\parallel$ as well as the ratio of the out-of-plane to in-plane spin lifetime $τ_\perp/τ_\parallel$ is manipulated by the built-in electric field at the semiconductor surface, without any addi…
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We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $τ_\parallel$ as well as the ratio of the out-of-plane to in-plane spin lifetime $τ_\perp/τ_\parallel$ is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba Spin-Orbit Fields (SOFs) at the Nb-SrTiO$_3$ surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a non-volatile control of $τ_\perp/τ_\parallel$, consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin)electronics
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Submitted 19 August, 2015;
originally announced August 2015.
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Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3
Authors:
S. Roy,
A. M. Kamerbeek,
K. G. Rana,
S. Parui,
T. Banerjee
Abstract:
SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high…
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SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.
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Submitted 21 February, 2013;
originally announced February 2013.
