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Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Authors:
Katja Barthelmi,
Tomer Amit,
Lukas Sigl,
Mirco Troue,
Thomas Klokkers,
Anna Herrmann,
Takashi Taniguchi,
Kenji Watanabe,
Jonathan Finley,
Christoph Kastl,
Sivan Refaely-Abramson,
Alexander Holleitner
Abstract:
We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab…
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We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab initio theory, but they have never been resolved in luminescence experiments because of their small amplitude. We reveal the lines by their dependence as a function of the photon energy and momentum as measured in the back focal plane of the optical circuitry. The agreement between theory and experiment suggests that the defect states interact strongly within the Brillouin zone.
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Submitted 25 July, 2024;
originally announced July 2024.
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Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS$_2$
Authors:
Florian Sigger,
Ines Amersdorffer,
Alexander Hötger,
Manuel Nutz,
Jonas Kiemle,
Takashi Taniguchi,
Kenji Watanabe,
Michael Förg,
Jonathan Noe,
Jonathan J. Finley,
Alexander Högele,
Alexander W. Holleitner,
Thomas Hümmer,
David Hunger,
Christoph Kastl
Abstract:
We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being…
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We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS$_2$. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials.
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Submitted 20 December, 2022;
originally announced December 2022.
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Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin
Authors:
Moritz Fischer,
Ali Sajid,
Jake Iles-Smith,
Alexander Hötger,
Denys I. Miakota,
Mark. K. Svendsen,
Christoph Kastl,
Stela Canulescu,
Sanshui Xiao,
Martijn Wubs,
Kristian S. Thygesen,
Alexander W. Holleitner,
Nicolas Stenger
Abstract:
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the c…
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The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: $\mathrm{C_2C_B}$, $\mathrm{C_2C_N}$, and $\mathrm{V_NC_B}$. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy 170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.
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Submitted 3 April, 2023; v1 submitted 19 September, 2022;
originally announced September 2022.
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Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$
Authors:
Alexander Hötger,
Tomer Amit,
Julian Klein,
Katja Barthelmi,
Thomas Pelini,
Alex Delhomme,
Sergio Rey,
Marek Potemski,
Clément Faugeras,
Galit Cohen,
Daniel Hernangómez-Pérez,
Takashi Taniguchi,
Kenji Watanabe,
Christoph Kastl,
Jonathan J. Finley,
Sivan Refaely-Abramson,
Alexander W. Holleitner,
Andreas V. Stier
Abstract:
Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a cons…
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Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.
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Submitted 17 March, 2023; v1 submitted 20 May, 2022;
originally announced May 2022.
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Berry curvature-induced local spin polarisation in gated graphene/WTe$_2$ heterostructures
Authors:
Lukas Powalla,
Jonas Kiemle,
Elio J. König,
Andreas P. Schnyder,
Johannes Knolle,
Klaus Kern,
Alexander Holleitner,
Christoph Kastl,
Marko Burghard
Abstract:
Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge fl…
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Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale.
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Submitted 29 June, 2021;
originally announced June 2021.
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Exciton self-trapping causes picoseconds recombination in metal-organic chalcogenides hybrid quantum wells
Authors:
Christoph Kastl,
Adam M. Schwartzberg,
Lorenzo Maserati
Abstract:
Metal-organic species can be designed to self-assemble in large-scale, atomically defined, supramolecular architectures. Hybrid quantum wells, where inorganic two-dimensional (2D) planes are separated by organic ligands, are a particular example. The ligands effectively provide an intralayer confinement for charge carriers resulting in a 2D electronic structure, even in multilayered assemblies. Ai…
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Metal-organic species can be designed to self-assemble in large-scale, atomically defined, supramolecular architectures. Hybrid quantum wells, where inorganic two-dimensional (2D) planes are separated by organic ligands, are a particular example. The ligands effectively provide an intralayer confinement for charge carriers resulting in a 2D electronic structure, even in multilayered assemblies. Air-stable metal organic chalcogenides hybrid quantum wells have recently been found to host tightly bound 2D excitons with strong optical anisotropy in a bulk matrix. Here, we investigate the excited carrier dynamics in the prototypical metal organic chalcogenide [AgSePh], disentangling three excitonic resonances by low temperature transient absorption spectroscopy. Our analysis suggests a complex relaxation cascade comprising ultrafast screening and renormalization, inter-exciton relaxation, and self-trapping of excitons within few picoseconds. The ps-decay provided by the self-trapping mechanism may be leveraged to unlock the material's potential for ultrafast optoelectronic applications.
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Submitted 10 March, 2021;
originally announced March 2021.
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Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS$_2$
Authors:
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jonah B. Haber,
Tianyi Zhang,
Azimkhan Kozhakhmetov,
Joshua A. Robinson,
Mauricio Terrones,
Jascha Repp,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Bruno Schuler
Abstract:
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state,…
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We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity exhibits a magnetic moment of 1 $μ_\text{B}$ resulting from an unpaired electron populating a spin-polarized in-gap orbital of C$^{\bullet -}_\text{S}$. Fermi level control by the underlying graphene substrate can charge and decharge the defect, thereby activating or quenching the defect magnetic moment. By inelastic tunneling spectroscopy and density functional theory calculations we show that the CRI defect states couple to a small number of vibrational modes, including a local, breathing-type mode. Interestingly, the electron-phonon coupling strength critically depends on the spin state and differs for monolayer and bilayer WS$_2$. These carbon radical ions in TMDs comprise a new class of surface-bound, single-atom spin-qubits that can be selectively introduced, are spatially precise, feature a well-understood vibronic spectrum, and are charge state controlled.
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Submitted 27 August, 2020;
originally announced August 2020.
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How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
Authors:
Bruno Schuler,
Jun-Ho Lee,
Christoph Kastl,
Katherine A. Cochrane,
Christopher T. Chen,
Sivan Refaely-Abramson,
Shengjun Yuan,
Edo van Veen,
Rafael Roldán,
Nicholas J. Borys,
Roland J. Koch,
Shaul Aloni,
Adam M. Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in…
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Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.
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Submitted 15 May, 2020;
originally announced May 2020.
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Scalable single-photon sources in atomically thin MoS2
Authors:
Julian Klein,
Lukas Sigl,
Samuel Gyger,
Katja Barthelmi,
Matthias Florian,
Sergio Rey,
Takashi Taniguchi,
Kenji Watanabe,
Frank Jahnke,
Christoph Kastl,
Val Zwiller,
Klaus D. Jöns,
Kai Müller,
Ursula Wurstbauer,
Jonathan J. Finley,
Alexander W. Holleitner
Abstract:
Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D material…
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Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.
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Submitted 20 February, 2020;
originally announced February 2020.
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Characterizing Transition-Metal Dichalcogenide Thin-Films using Hyperspectral Imaging and Machine Learning
Authors:
Brian Shevitski,
Christopher T. Chen,
Christoph Kastl,
Tevye Kuykendall,
Adam Schwartzberg,
Shaul Aloni,
Alex Zettl
Abstract:
Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS2 films using scanning nanobeam elect…
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Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS2 films using scanning nanobeam electron diffraction coupled with multivariate statistical analysis of the resulting data. Our analysis pipeline is highly generalizable and is a useful alternative to the time consuming, complex, and system-dependent methodology traditionally used to analyze spatially resolved electron diffraction measurements.
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Submitted 29 January, 2020;
originally announced January 2020.
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Electrically driven photon emission from individual atomic defects in monolayer WS2
Authors:
Bruno Schuler,
Katherine A. Cochrane,
Christoph Kastl,
Ed Barnard,
Ed Wong,
Nicholas Borys,
Adam M. Schwartzberg,
D. Frank Ogletree,
F. Javier García de Abajo,
Alexander Weber-Bargioni
Abstract:
Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstr…
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Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstrate electrically stimulated photon emission from individual point defects in a 2D material. Specifically, by bringing a metallic tip into close proximity to a discrete defect state in the band gap of WS2, we induce inelastic tip-to-defect electron tunneling with an excess of transition energy carried by the emitted photons. We gain atomic spatial control over the emission through the position of the tip, while the spectral characteristics are highly customizable by varying the applied tip-sample voltage. Atomically resolved emission maps of individual sulfur vacancies and chromium substituent defects are in excellent agreement with the electron density of their respective defect orbitals as imaged via conventional elastic scanning tunneling microscopy. Inelastic charge-carrier injection into localized defect states of 2D materials thus provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
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Submitted 10 October, 2019;
originally announced October 2019.
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Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Authors:
Martik Aghajanian,
Bruno Schuler,
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave functi…
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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
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Submitted 5 September, 2019;
originally announced September 2019.
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Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Authors:
Brian Shevitski,
S. Matt Gilbert,
Christopher T. Chen,
Christoph Kastl,
Edward S. Barnard,
Ed Wong,
D. Frank Ogletree,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Shaul Aloni
Abstract:
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent…
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Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are only present in ultra-high-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.
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Submitted 5 September, 2019; v1 submitted 27 April, 2019;
originally announced April 2019.
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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Authors:
Sara Barja,
Sivan Refaely-Abramson,
Bruno Schuler,
Diana Y. Qiu,
Artem Pulkin,
Sebastian Wickenburg,
Hyejin Ryu,
Miguel M. Ugeda,
Christoph Kastl,
Christopher Chen,
Choongyu Hwang,
Adam Schwartzberg,
Shaul Aloni,
Sung-Kwan Mo,
D. Frank Ogletree,
Michael F. Crommie,
Oleg V. Yazyev,
Steven G. Louie,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scan…
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Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies.
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Submitted 6 March, 2020; v1 submitted 8 October, 2018;
originally announced October 2018.
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Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Authors:
Bruno Schuler,
Diana Y. Qiu,
Sivan Refaely-Abramson,
Christoph Kastl,
Christopher T. Chen,
Sara Barja,
Roland J. Koch,
D. Frank Ogletree,
Shaul Aloni,
Adam M. Schwartzberg,
Jeffrey B. Neaton,
Steven G. Louie,
Alexander Weber-Bargioni
Abstract:
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure…
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Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states of the vacancy provide a unique fingerprint of this defect. Direct imaging of the defect orbitals by STM and state-of-the-art GW calculations reveal that the large splitting of 252 meV between these defect states is induced by spin-orbit coupling. The controllable incorporation and potential decoration of chalcogen vacancies provide a new route to tailor the optical, catalytic and magnetic properties of TMDs.
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Submitted 19 August, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature
Authors:
Paul Seifert,
Florian Sigger,
Jonas Kiemle,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Kastl,
Ursula Wurstbauer,
Alexander Holleitner
Abstract:
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a di…
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Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.
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Submitted 2 October, 2018;
originally announced October 2018.
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Switchable quantized conductance in topological insulators revealed by the Shockley-Ramo theorem
Authors:
Paul Seifert,
Marinus Kundinger,
Gang Shi,
Xiaoyue He,
Kehui Wu,
Yongqing Li,
Alexander Holleitner,
Christoph Kastl
Abstract:
Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. Still, a major obstacle towards an application of topological surface states in integrated circuits is a clear, reliable, and straightforward read-out independent of a prevailing charge carrier density in the…
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Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. Still, a major obstacle towards an application of topological surface states in integrated circuits is a clear, reliable, and straightforward read-out independent of a prevailing charge carrier density in the bulk. Here, we demonstrate how to image and read-out the local conductance of helical surface modes in the prototypical topological insulators Bi2Se3 and BiSbTe3. We apply the so-called Shockley-Ramo theorem to design an optoelectronic probe circuit for the gapless surface states, and surprisingly find a precise conductance quantization at 1e2/h. The unprecedented response is a clear signature of local spin-polarized transport, and it can be switched on and off via an electrostatic field effect. The macroscopic, global read-out scheme is based on the displacement current resistivity, and it does not require coherent transport between electrodes.6 It provides a generalizable platform for studying further non-trivial gapless systems such as Weyl-semimetals and quantum spin-Hall insulators.
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Submitted 31 July, 2018;
originally announced July 2018.
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Quantized one-dimensional edge channels with strong spin-orbit coupling in 3D topological insulators
Authors:
Christoph Kastl,
Paul Seifert,
Xiaoyue He,
Kehui Wu,
Yongqing Li,
Alexander Holleitner
Abstract:
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance…
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A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.
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Submitted 10 December, 2015;
originally announced December 2015.
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Chemical Potential Fluctuations in Topological Insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Films Visualized by Photocurrent Spectroscopy
Authors:
Christoph Kastl,
Paul Seifert,
Xiaoyue He,
Kehui Wu,
Yongqing Li,
Alexander Holleitner
Abstract:
We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations.…
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We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.
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Submitted 27 February, 2015;
originally announced February 2015.
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Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity
Authors:
Christoph Kastl,
Christoph Karnetzky,
Helmut Karl,
Alexander W. Holleitner
Abstract:
In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterizati…
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In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterization and control of the surface states via transport experiments is often hindered by residual bulk contributions yet at cryogenic temperatures. Here, we show that surface currents in Bi2Se3 can be controlled by circularly polarized light on a picosecond time scale with a fidelity near unity even at room temperature. We re-veal the temporal separation of such ultrafast helicity-dependent surface currents from photo-induced thermoelectric and drift currents in the bulk. Our results uncover the functionality of ultrafast optoelectronic devices based on surface currents in topological insulators.
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Submitted 30 January, 2015;
originally announced January 2015.
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Local photocurrent generation in thin films of the topological insulator Bi2Se3
Authors:
C. Kastl,
T. Guan,
X. Y. He,
K. H. Wu,
Y. Q. Li,
A. W. Holleitner
Abstract:
We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits…
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We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.
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Submitted 17 October, 2012;
originally announced October 2012.
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Enlarged magnetic focusing radius of photoinduced ballistic currents
Authors:
Markus Stallhofer,
Christoph Kastl,
Marcel Brändlein,
Dieter Schuh,
Werner Wegscheider,
Jörg. P. Kotthaus,
Gerhard Abstreiter,
Alexander Holleitner
Abstract:
We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The e…
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We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason.
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Submitted 16 January, 2012;
originally announced January 2012.
