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Lattice Thermal Transport in Two-Dimensional Alloys and Fractal Heterostructures
Authors:
Aravind Krishnamoorthy,
Nitish Baradwaj,
Aiichiro Nakano,
Rajiv K. Kalia,
Priya Vashishta
Abstract:
Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synth…
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Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of (Mo|W)Se$_2$ monolayer crystals including Mo$_{1-x}$W$_x$Se$_2$ alloys with substitutional point defects, periodic MoSe$_2$|WSe$_2$ heterostructures with characteristic length scales and scale-free fractal MoSe$_2$|WSe$_2$ heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.
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Submitted 30 September, 2020;
originally announced September 2020.
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EZFF: Python Library for Multi-Objective Parameterization and Uncertainty Quantification of Interatomic Forcefields for Molecular Dynamics
Authors:
Aravind Krishnamoorthy,
Ankit Mishra,
Deepak Kamal,
Sungwook Hong,
Ken-ichi Nomura,
Subodh Tiwari,
Aiichiro Nakano,
Rajiv Kalia,
Rampi Ramprasad,
Priya Vashishta
Abstract:
Parameterization of interatomic forcefields is a necessary first step in performing molecular dynamics simulations. This is a non-trivial global optimization problem involving quantification of multiple empirical variables against one or more properties. We present EZFF, a lightweight Python library for parameterization of several types of interatomic forcefields implemented in several molecular d…
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Parameterization of interatomic forcefields is a necessary first step in performing molecular dynamics simulations. This is a non-trivial global optimization problem involving quantification of multiple empirical variables against one or more properties. We present EZFF, a lightweight Python library for parameterization of several types of interatomic forcefields implemented in several molecular dynamics engines against multiple objectives using genetic-algorithm-based global optimization methods. The EZFF scheme provides unique functionality such as the parameterization of hybrid forcefields composed of multiple forcefield interactions as well as built-in quantification of uncertainty in forcefield parameters and can be easily extended to other forcefield functional forms as well as MD engines.
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Submitted 30 September, 2020;
originally announced September 2020.
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Predictive Synthesis of Quantum Materials by Probabilistic Reinforcement Learning
Authors:
Pankaj Rajak,
Aravind Krishnamoorthy,
Ankit Mishra,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-…
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Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-sequence of reaction conditions like temperatures and reactant concentrations, for the synthesis of a prototypical quantum material, semiconducting monolayer MoS$_{2}$, using chemical vapor deposition. The predictive reinforcement leaning agent is coupled to a deep generative model to capture the crystallinity and phase-composition of synthesized MoS$_{2}$ during CVD synthesis as a function of time-dependent synthesis conditions. This model, trained on 10000 computational synthesis simulations, successfully learned threshold temperatures and chemical potentials for the onset of chemical reactions and predicted new synthesis schedules for producing well-sulfidized crystalline and phase-pure MoS$_{2}$, which were validated by computational synthesis simulations. The model can be extended to predict profiles for synthesis of complex structures including multi-phase heterostructures and can also predict long-time behavior of reacting systems, far beyond the domain of the MD simulations used to train the model, making these predictions directly relevant to experimental synthesis.
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Submitted 14 September, 2020;
originally announced September 2020.
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An Experimentally Driven Automated Machine Learned lnter-Atomic Potential for a Refractory Oxide
Authors:
Ganesh Sivaraman,
Leighanne Gallington,
Anand Narayanan Krishnamoorthy,
Marius Stan,
Gabor Csanyi,
Alvaro Vazquez-Mayagoitia,
Chris J. Benmore
Abstract:
Understanding the structure and properties of refractory oxides are critical for high temperature applications. In this work, a combined experimental and simulation approach uses an automated closed loop via an active-learner, which is initialized by X-ray and neutron diffraction measurements, and sequentially improves a machine-learning model until the experimentally predetermined phase space is…
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Understanding the structure and properties of refractory oxides are critical for high temperature applications. In this work, a combined experimental and simulation approach uses an automated closed loop via an active-learner, which is initialized by X-ray and neutron diffraction measurements, and sequentially improves a machine-learning model until the experimentally predetermined phase space is covered. A multi-phase potential is generated for a canonical example of the archetypal refractory oxide, HfO2, by drawing a minimum number of training configurations from room temperature to the liquid state at ~2900oC. The method significantly reduces model development time and human effort.
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Submitted 8 September, 2020;
originally announced September 2020.
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Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe$_{2}$ with Femtosecond Core-Level Spectroscopy
Authors:
Andrew R. Attar,
Hung-Tzu Chang,
Alexander Britz,
Xiang Zhang,
Ming-Fu Lin,
Aravind Krishnamoorthy,
Thomas Linker,
David Fritz,
Daniel M. Neumark,
Rajiv K. Kalia,
Aiichiro Nakano,
Pulickel Ajayan,
Priya Vashishta,
Uwe Bergmann,
Stephen R. Leone
Abstract:
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, th…
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We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15$\pm$5 fs and 380$\pm$90 fs, respectively, and an electron-hole recombination time of 1.5$\pm$0.1 ps. Furthermore, excitations of coherent out-of-plane A$_{1g}$ (5.1 THz) and in-plane E$_{1g}$ (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A$_{1g}$ coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe$_{2}$ within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
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Submitted 14 October, 2020; v1 submitted 1 September, 2020;
originally announced September 2020.
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Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals
Authors:
Seong Soon Jo,
Akshay Singh,
Liqiu Yang,
Subodh C. Tiwari,
Sungwook Hong,
Aravind Krishnamoorthy,
Maria Gabriela Sales,
Sean M. Oliver,
Joshua Fox,
Randal L. Cavalero,
David W. Snyder,
Patrick M. Vora,
Stephen J. McDonnell,
Priya Vashishta,
Rajiv K. Kalia,
Aiichiro Nakano,
Rafael Jaramillo
Abstract:
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and p…
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A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
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Submitted 16 November, 2020; v1 submitted 30 June, 2020;
originally announced July 2020.
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Towards Dynamic Simulations of Materials on Quantum Computers
Authors:
Lindsay Bassman,
Kuang Liu,
Aravind Krishnamoorthy,
Thomas Linker,
Yifan Geng,
Daniel Shebib,
Shogo Fukushima,
Fuyuki Shimojo,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
A highly anticipated application for quantum computers is as a universal simulator of quantum many-body systems, as was conjectured by Richard Feynman in the 1980s. The last decade has witnessed the growing success of quantum computing for simulating static properties of quantum systems, i.e., the ground state energy of small molecules. However, it remains a challenge to simulate quantum many-body…
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A highly anticipated application for quantum computers is as a universal simulator of quantum many-body systems, as was conjectured by Richard Feynman in the 1980s. The last decade has witnessed the growing success of quantum computing for simulating static properties of quantum systems, i.e., the ground state energy of small molecules. However, it remains a challenge to simulate quantum many-body dynamics on current-to-near-future noisy intermediate-scale quantum computers. Here, we demonstrate successful simulation of nontrivial quantum dynamics on IBM's Q16 Melbourne quantum processor and Rigetti's Aspen quantum processor; namely, ultrafast control of emergent magnetism by THz radiation in an atomically-thin two-dimensional material. The full code and step-by-step tutorials for performing such simulations are included to lower the barrier to access for future research on these two quantum computers. As such, this work lays a foundation for the promising study of a wide variety of quantum dynamics on near-future quantum computers, including dynamic localization of Floquet states and topological protection of qubits in noisy environments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Machine Learning Inter-Atomic Potentials Generation Driven by Active Learning: A Case Study for Amorphous and Liquid Hafnium dioxide
Authors:
Ganesh Sivaraman,
Anand Narayanan Krishnamoorthy,
Matthias Baur,
Christian Holm,
Marius Stan,
Gabor Csányi,
Chris Benmore,
Álvaro Vázquez-Mayagoitia
Abstract:
We propose a novel active learning scheme for automatically sampling a minimum number of uncorrelated configurations for fitting the Gaussian Approximation Potential (GAP). Our active learning scheme consists of an unsupervised machine learning (ML) scheme coupled to Bayesian optimization technique that evaluates the GAP model. We apply this scheme to a Hafnium dioxide (HfO2) dataset generated fro…
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We propose a novel active learning scheme for automatically sampling a minimum number of uncorrelated configurations for fitting the Gaussian Approximation Potential (GAP). Our active learning scheme consists of an unsupervised machine learning (ML) scheme coupled to Bayesian optimization technique that evaluates the GAP model. We apply this scheme to a Hafnium dioxide (HfO2) dataset generated from a melt-quench ab initio molecular dynamics (AIMD) protocol. Our results show that the active learning scheme, with no prior knowledge of the dataset is able to extract a configuration that reaches the required energy fit tolerance. Further, molecular dynamics (MD) simulations performed using this active learned GAP model on 6144-atom systems of amorphous and liquid state elucidate the structural properties of HfO2 with near ab initio precision and quench rates (i.e. 1.0 K/ps) not accessible via AIMD. The melt and amorphous x-ray structural factors generated from our simulation are in good agreement with experiment. Additionally, the calculated diffusion constants are in good agreement with previous ab initio studies.
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Submitted 22 October, 2019;
originally announced October 2019.
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Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface x-ray scattering
Authors:
I-Cheng Tung,
Aravind Krishnamoorthy,
Sridhar Sadasivam,
Hua Zhou,
Qi Zhang,
Kyle L. Seyler,
Genevieve Clark,
Ehren M. Mannebach,
Clara Nyby,
Friederike Ernst,
Diling Zhu,
James M. Glownia,
Michael E. Kozina,
Sanghoon Song,
Silke Nelson,
Hiroyuki Kumazoe,
Fuyuki Shimojo,
Rajiv K. Kalia,
Priya Vashishta,
Pierre Darancet,
Tony F. Heinz,
Aiichiro Nakano,
Xiaodong Xu,
Aaron M. Lindenberg,
Haidan Wen
Abstract:
X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structu…
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X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structural properties at the two-dimensional limit. Here, we demonstrate femtosecond surface x-ray diffraction in combination with crystallographic model-refinement calculations to quantify the ultrafast structural dynamics of monolayer WSe$_2$ crystals supported on a substrate. We found the absorbed optical photon energy is preferably coupled to the in-plane lattice vibrations within 2 picoseconds while the out-of-plane lattice vibration amplitude remains unchanged during the first 10 picoseconds. The model-assisted fitting suggests an asymmetric intralayer spacing change upon excitation. The observed nonequilibrium anisotropic structural dynamics in two-dimensional materials agrees with first-principles nonadiabatic modeling in both real and momentum space, marking the distinct structural dynamics of monolayer crystals from their bulk counterparts. The demonstrated methods unlock the benefit of surface sensitive x-ray scattering to quantitatively measure ultrafast structural dynamics in atomically thin materials and across interfaces.
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Submitted 28 November, 2018;
originally announced November 2018.