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Unveiling the electronic structure of pseudo-tetragonal WO$_3$ thin films
Authors:
F. Mazzola,
H. Hassani,
D. Amoroso,
S. K. Chaluvadi,
J. Fujii,
V. Polewczyk,
P. Rajak,
Max Koegler,
R. Ciancio,
B. Partoens,
G. Rossi,
I. Vobornik,
P. Ghosez,
P. Orgiani
Abstract:
WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing ta…
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WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system.
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Submitted 20 April, 2023;
originally announced April 2023.
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Disentangling structural and electronic properties in V$_{2}$O$_{3}$ thin films: a genuine non-symmetry breaking Mott transition
Authors:
Federico Mazzola,
Sandeep Kumar Chaluvadi,
Vincent Polewczyk,
Debashis Mondal,
Jun Fujii,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Luisa Barba,
Michele Fabrizio,
Giorgio Rossi,
Pasquale Orgiani,
Ivana Vobornik
Abstract:
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the…
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Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the bulk V$_{2}$O$_{3}$ crystals, we unveil the purely electronic dynamics approaching the metal-insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves surprisingly slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature appears to be much lower than the one reported for the bulk. Our findings are on one side fundamental in demonstrating the universal benchmarks of a genuine non-symmetry breaking Mott transition, extendable to a large array of correlated quantum systems and, on the other, given that the fatal structural breakdown is avoided, they hold promise of exploiting the metal-insulator transition by implementing V$_{2}$O$_{3}$ thin films in devices.
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Submitted 1 July, 2022;
originally announced July 2022.
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Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$
Authors:
A. Benali,
P. Rajak,
R. Ciancio,
J. R. Plaisier,
S. Heun,
G. Biasiol
Abstract:
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer l…
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We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.
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Submitted 23 June, 2022;
originally announced June 2022.
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All-optical spin injection in silicon revealed by element specific time-resolved Kerr effect
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Roberto Flammini,
Paolo Moras,
MatteoJugovac,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Valentina Bonanni,
Barbara Casarin,
Alberto Simoncig,
Marco Zangrando,
Primoz Rebernik Ribic,
Giuseppe Penco,
Giovanni De Ninno,
LucaGiannessi,
Alexander Demidovich,
Miltcho Danailov,
Fulvio Parmigiani,
Marco Malvestuto
Abstract:
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes…
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Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.
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Submitted 4 October, 2021;
originally announced October 2021.
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Predictive Synthesis of Quantum Materials by Probabilistic Reinforcement Learning
Authors:
Pankaj Rajak,
Aravind Krishnamoorthy,
Ankit Mishra,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-…
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Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-sequence of reaction conditions like temperatures and reactant concentrations, for the synthesis of a prototypical quantum material, semiconducting monolayer MoS$_{2}$, using chemical vapor deposition. The predictive reinforcement leaning agent is coupled to a deep generative model to capture the crystallinity and phase-composition of synthesized MoS$_{2}$ during CVD synthesis as a function of time-dependent synthesis conditions. This model, trained on 10000 computational synthesis simulations, successfully learned threshold temperatures and chemical potentials for the onset of chemical reactions and predicted new synthesis schedules for producing well-sulfidized crystalline and phase-pure MoS$_{2}$, which were validated by computational synthesis simulations. The model can be extended to predict profiles for synthesis of complex structures including multi-phase heterostructures and can also predict long-time behavior of reacting systems, far beyond the domain of the MD simulations used to train the model, making these predictions directly relevant to experimental synthesis.
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Submitted 14 September, 2020;
originally announced September 2020.
