All-optical spin injection in silicon revealed by element specific time-resolved Kerr effect
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Roberto Flammini,
Paolo Moras,
MatteoJugovac,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Valentina Bonanni,
Barbara Casarin,
Alberto Simoncig,
Marco Zangrando,
Primoz Rebernik Ribic,
Giuseppe Penco,
Giovanni De Ninno,
LucaGiannessi,
Alexander Demidovich,
Miltcho Danailov,
Fulvio Parmigiani,
Marco Malvestuto
Abstract:
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes…
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Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.
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Submitted 4 October, 2021;
originally announced October 2021.
