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Nanoscale transient polarization gratings
Authors:
Laura Foglia,
Björn Wehinger,
Giovanni Perosa,
Riccardo Mincigrucci,
Enrico Allaria,
Francesco Armillotta,
Alexander Brynes,
Riccardo Cucini,
Dario De Angelis,
Giovanni De Ninno,
W. Dieter Engel,
Danny Fainozzi,
Luca Giannessi,
Nupur N. Khatu,
Simone Laterza,
Ettore Paltanin,
Jacopo Stefano Pelli-Cresi,
Giuseppe Penco,
Denny Puntel,
Primož Rebernik Ribič,
Filippo Sottocorona,
Mauro Trovò,
Clemens von Korff Schmising,
Kelvin Yao,
Claudio Masciovecchio
, et al. (2 additional authors not shown)
Abstract:
We present the generation of transient polarization gratings at the nanoscale, achieved using a tailored accelerator configuration of the FERMI free electron laser. We demonstrate the capabilities of such a transient polarization grating by comparing its induced dynamics with the ones triggered by a more conventional intensity grating on a thin film ferrimagnetic alloy. While the signal of the int…
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We present the generation of transient polarization gratings at the nanoscale, achieved using a tailored accelerator configuration of the FERMI free electron laser. We demonstrate the capabilities of such a transient polarization grating by comparing its induced dynamics with the ones triggered by a more conventional intensity grating on a thin film ferrimagnetic alloy. While the signal of the intensity grating is dominated by the thermoelastic response of the system, such a contribution is suppressed in the case of the polarization grating. This exposes helicity-dependent magnetization dynamics that have so-far remained hidden under the large thermally driven response. We anticipate nanoscale transient polarization gratings to become useful for the study of any physical, chemical and biological systems possessing chiral symmetry.
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Submitted 24 October, 2023;
originally announced October 2023.
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Harnessing the magnetic proximity effect: induced spin polarization in Ni/Si interfaces
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Paolo Moras,
Nicola Zema,
Roberto Flammini,
Marco Malvestuto
Abstract:
The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic properties of Ni/Si interfaces utilizing X-ray magnetic circular dichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. This approach allows to dis…
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The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic properties of Ni/Si interfaces utilizing X-ray magnetic circular dichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. This approach allows to distinguish unambiguously the local magnetism on Ni and Si via individual core-level excitations. Two samples with different semiconductor dopings were investigated using both total electron yield (TEY) and reflectivity configurations. The experimental results uncovered magnetization at equilibrium in both the metallic layer and in the proximal layer of the semiconductor substrate, implying the presence of induced spin polarization in Si at equilibrium, possibly arising from the depletion layer region. These results hold significant value in the field of spintronics, as similar systems have been demonstrated to generate spin injection through optical medium, opening a new pathway for next generation nonvolatile high speed devices.
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Submitted 9 May, 2023;
originally announced May 2023.
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All-optical spin injection in silicon revealed by element specific time-resolved Kerr effect
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Roberto Flammini,
Paolo Moras,
MatteoJugovac,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Valentina Bonanni,
Barbara Casarin,
Alberto Simoncig,
Marco Zangrando,
Primoz Rebernik Ribic,
Giuseppe Penco,
Giovanni De Ninno,
LucaGiannessi,
Alexander Demidovich,
Miltcho Danailov,
Fulvio Parmigiani,
Marco Malvestuto
Abstract:
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes…
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Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.
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Submitted 4 October, 2021;
originally announced October 2021.
