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On the floating of the topological surface state on top of a thick lead layer: The case of the Pb/Bi2Se3 interface
Authors:
Oreste De Luca,
Igor A. Shvets,
Sergey V. Eremeev,
Ziya S. Aliev,
Marek Kopciuszynski,
Alexey Barinov,
Fabio Ronci,
Stefano Colonna,
Evgueni V. Chulkov,
Raffaele G. Agostino,
Marco Papagno,
Roberto Flammini
Abstract:
The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leave…
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The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leaves the substrate partially uncovered. Comprehensive density functional theory calculations show that despite the specific arrangement of the atoms at the interface, the topological surface state cannot float on top of the adlayer but rather tends to move inward within the substrate.
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Submitted 27 November, 2023; v1 submitted 25 August, 2023;
originally announced August 2023.
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Harnessing the magnetic proximity effect: induced spin polarization in Ni/Si interfaces
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Paolo Moras,
Nicola Zema,
Roberto Flammini,
Marco Malvestuto
Abstract:
The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic properties of Ni/Si interfaces utilizing X-ray magnetic circular dichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. This approach allows to dis…
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The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic properties of Ni/Si interfaces utilizing X-ray magnetic circular dichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. This approach allows to distinguish unambiguously the local magnetism on Ni and Si via individual core-level excitations. Two samples with different semiconductor dopings were investigated using both total electron yield (TEY) and reflectivity configurations. The experimental results uncovered magnetization at equilibrium in both the metallic layer and in the proximal layer of the semiconductor substrate, implying the presence of induced spin polarization in Si at equilibrium, possibly arising from the depletion layer region. These results hold significant value in the field of spintronics, as similar systems have been demonstrated to generate spin injection through optical medium, opening a new pathway for next generation nonvolatile high speed devices.
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Submitted 9 May, 2023;
originally announced May 2023.
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All-optical spin injection in silicon revealed by element specific time-resolved Kerr effect
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Roberto Flammini,
Paolo Moras,
MatteoJugovac,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Valentina Bonanni,
Barbara Casarin,
Alberto Simoncig,
Marco Zangrando,
Primoz Rebernik Ribic,
Giuseppe Penco,
Giovanni De Ninno,
LucaGiannessi,
Alexander Demidovich,
Miltcho Danailov,
Fulvio Parmigiani,
Marco Malvestuto
Abstract:
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes…
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Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.
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Submitted 4 October, 2021;
originally announced October 2021.
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Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)
Authors:
Sedighe Salimian,
Shaohua Xiang,
Stefano Colonna,
Fabio Ronci,
Marco Fosca,
Francesco Rossella,
Fabio Beltram,
Roberto Flammini,
Stefan Heun
Abstract:
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene fl…
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We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected.
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Submitted 20 April, 2020;
originally announced April 2020.
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Temperature driven phase transition at the antimonene/Bi2Se3 van der Waals heterostructure
Authors:
Conor Hogan,
Kris Holtgrewe,
Fabio Ronci,
Stefano Colonna,
Simone Sanna,
Paolo Moras,
Polina Sheverdyaeva,
Sanjoy Mahatha,
Marco Papagno,
Ziya S. Aliev,
Mohammad B. Babanly,
Evgeni V. Chulkov,
Carlo Carbone,
Roberto Flammini
Abstract:
We report the discovery of a temperature induced phase transition between the αand βstructures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the βphase grows and prevails over the αphase, eventually forming a single domain that perfectly matche…
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We report the discovery of a temperature induced phase transition between the αand βstructures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the βphase grows and prevails over the αphase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of free-standing α- and β-antimonene only slightly differ, the βphase is ultimately favoured in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match.
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Submitted 5 June, 2019;
originally announced June 2019.
