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Identifying the mechanism of single-domain single-layer MoS2 growth on Au(111)
Authors:
Moritz Ewert,
Lars Buß,
Jeppe V. Lauritsen,
Jens Falta,
Jan Ingo Flege
Abstract:
The nucleation and growth of single-layer molybdenum disulfide single domain islands is investigated by in situ low-energy electron microscopy. We study the growth of micron-sized flakes and the correlated flattening process of the gold surface for three different elevated temperatures. Furthermore, the influence of surface step edges on the molybdenum disulfide growth process is revealed. We show…
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The nucleation and growth of single-layer molybdenum disulfide single domain islands is investigated by in situ low-energy electron microscopy. We study the growth of micron-sized flakes and the correlated flattening process of the gold surface for three different elevated temperatures. Furthermore, the influence of surface step edges on the molybdenum disulfide growth process is revealed. We show that both island and underlying terrace grow simultaneously by pushing the surface step in the expansion process. Our findings point to an optimized growth procedure allowing for step-free single-domain single-layer islands of several micrometers in size, which is likely transferable to other transition metal dichalcogenides.
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Submitted 7 May, 2021;
originally announced May 2021.
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Electronic Properties of Single-Layer CoO$_2$/Au(111)
Authors:
Ann Julie U. Holt,
Sahar Pakdel,
Jonathan Rodríguez-Fernández,
Yu Zhang,
Davide Curcio,
Zhaozong Sun,
Paolo Lacovig,
Yong-Xin Yao,
Jeppe V. Lauritsen,
Silvano Lizzit,
Nicola Lanatà,
Philip Hofmann,
Marco Bianchi,
Charlotte E. Sanders
Abstract:
We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $\overlineΓ$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on cryst…
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We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $\overlineΓ$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO$_2$ single-layer electronic structure.
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Submitted 6 April, 2021;
originally announced April 2021.
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Monomeric, Two-Dimensionally Ordered WO$_3$ Clusters on Anatase TiO$_2$(101)
Authors:
Tao Xu,
Kræn C. Adamsen,
Hanne Falsig,
Søren B. Rasmussen,
Zheshen Li,
Stefan Wendt,
Jeppe V. Lauritsen
Abstract:
We combined scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations to study dispersed tungsta clusters on anatase TiO$_2$(101). Following two different preparation methods, we found that monomeric WO$_3$ species are the most stable configuration rather than WO$_3$ trimers, (WO$_3$)$_3$. The WO$_3$ monomers form t…
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We combined scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations to study dispersed tungsta clusters on anatase TiO$_2$(101). Following two different preparation methods, we found that monomeric WO$_3$ species are the most stable configuration rather than WO$_3$ trimers, (WO$_3$)$_3$. The WO$_3$ monomers form tetrahedral WO$_4$ structures on anatase TiO$_2$(101), with one W$-$O bond and two W$-$O$-$Ti linkages per WO$_3$ monomer. Locally, the WO$_3$ monomers form well-ordered (2$\times$1) structures. The discovered geometric structure of WO$_3$ on anatase TiO$_2$(101) opens up numerous opportunities for fundamental studies addressing tungsta and accurate structure activity studies of WO$_3$/TiO$_2$ model catalysts.
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Submitted 7 August, 2020;
originally announced August 2020.
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Size-dependent phase transitions in MoS2 nanoparticles controlled by a metal substrate
Authors:
Albert Bruix,
Jeppe Vang Lauritsen,
Bjørk Hammer
Abstract:
Nanomaterials based on MoS2 are remarkably versatile; MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and the hydrogen evolution reaction, and transition metal dichalcogenides in general have recently emerged as novel 2D components for nanoscale electronics and optoelectronics. The properties of such materials are intimately related to their structure and dimens…
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Nanomaterials based on MoS2 are remarkably versatile; MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and the hydrogen evolution reaction, and transition metal dichalcogenides in general have recently emerged as novel 2D components for nanoscale electronics and optoelectronics. The properties of such materials are intimately related to their structure and dimensionality. For example, only the edges exposed by MoS2 nanoparticles (NPs) are catalytically active, and extended MoS2 systems show different character (direct or indirect gap semiconducting, or metallic) depending on their thickness and crystallographic phase. In this work, we show how particle size and interaction with a metal surface affect the stability and properties of different MoS2 NPs and the resulting phase diagrams. By means of calculations based on the Density Functional Theory (DFT), we address how support interactions affect MoS2 nanoparticles of varying size, composition, and structure. We demonstrate that interaction with Au modifies the relative stability of the different nanoparticle types so that edge terminations and crystallographic phases that are metastable for free-standing nanoparticles and monolayers are expressed in the supported system. These support-effects are strongly size-dependent due to the mismatch between Au and MoS2 lattices, which explains experimentally observed transitions in the structural phases for supported MoS2 NPs. Accounting for vdW interactions and the contraction of the Au(111) surface underneath the MoS2 is further found to be necessary for quantitatively reproducing experimental results. This work demonstrates how the properties of nanostructured MoS2 and similar layered systems can be modified by the choice of supporting metal.
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Submitted 3 May, 2018;
originally announced May 2018.
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Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
Authors:
Søren Ulstrup,
Antonija Grubišić Čabo,
Jill A. Miwa,
Jonathon M. Riley,
Signe S. Grønborg,
Jens C. Johannsen,
Cephise Cacho,
Oliver Alexander,
Richard T. Chapman,
Emma Springate,
Marco Bianchi,
Maciej Dendzik,
Jeppe V. Lauritsen,
Phil D. C. King,
Philip Hofmann
Abstract:
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-l…
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The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS$_2$ on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS$_2$ layer. Following optical excitation, the band gap is reduced by up to $\sim\!$400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the $n$-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.
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Submitted 11 June, 2016;
originally announced June 2016.
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Single-layer MoS$_2$ on Au(111): band gap renormalization and substrate interaction
Authors:
Albert Bruix,
Jill A. Miwa,
Nadine Hauptmann,
Daniel Wegner,
Søren Ulstrup,
Signe S. Grønborg,
Charlotte E. Sanders,
Maciej Dendzik,
Antonija Grubišić Čabo,
Marco Bianchi,
Jeppe V. Lauritsen,
Alexander A. Khajetoorians,
Bjørk Hammer,
Philip Hofmann
Abstract:
The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is…
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The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$, the valence band maximum has a significantly higher binding energy than in the free MoS$_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS$_2$ orbitals with the substrate.
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Submitted 1 January, 2016;
originally announced January 2016.
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In Situ Detection of Active Edge Sites in Single-Layer MoS$_2$ Catalysts
Authors:
Albert Bruix,
Henrik G. Füchtbauer,
Anders K. Tuxen,
Alex S. Walton,
Mie Andersen,
Søren Porsgaard,
Flemming Besenbacher,
Bjørk Hammer,
Jeppe V. Lauritsen
Abstract:
MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and hydrogen evolution, but unravelling their atomic-scale structure under catalytic working conditions has remained significantly challenging. Ambient pressure X-ray Photoelectron Spectroscopy (AP-XPS) allows us to follow in-situ the formation of the catalytically relevant MoS2 edge sites in their active state. Th…
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MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and hydrogen evolution, but unravelling their atomic-scale structure under catalytic working conditions has remained significantly challenging. Ambient pressure X-ray Photoelectron Spectroscopy (AP-XPS) allows us to follow in-situ the formation of the catalytically relevant MoS2 edge sites in their active state. The XPS fingerprint is described by independent contributions to the Mo3d core level spectrum whose relative intensity is sensitive to the thermodynamic conditions. Density Functional Theory (DFT) is used to model the triangular MoS2 particles on Au(111) and identify the particular sulphidation state of the edge sites. A consistent picture emerges in which the core level shifts for the edge Mo atoms evolve counter-intuitively towards higher binding energies when the active edges are reduced. The shift is explained by a surprising alteration in the metallic character of the edge sites, which is a distinct spectroscopic signature of the MoS2 edges under working conditions.
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Submitted 13 November, 2015;
originally announced November 2015.
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Synthesis of Epitaxial Single-Layer MoS$_2$ on Au(111)
Authors:
Signe S. Grønborg,
Søren Ulstrup,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jeppe V. Lauritsen,
Philip Hofmann,
Jill A. Miwa
Abstract:
We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach b…
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We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS$_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS$_2$ islands, we identify domains rotated by 60$^{\circ}$ that lead to atomically sharp line defects at domain boundaries. As the MoS$_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS$_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS$_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS$_2$ layer from vacuum is not found to affect its quality.
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Submitted 23 September, 2015;
originally announced September 2015.
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Growth and electronic structure of epitaxial single-layer WS$_2$ on Au(111)
Authors:
Maciej Dendzik,
Matteo Michiardi,
Charlotte Sanders,
Marco Bianchi,
Jill A. Miwa,
Signe S. Grønborg,
Jeppe Vang Lauritsen,
Philip Hofmann
Abstract:
Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be sign…
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Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS$_2$ a promising alternative to the widely studied MoS$_2$ for applications in electronics, spintronics and valleytronics.
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Submitted 17 September, 2015;
originally announced September 2015.
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Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$
Authors:
Antonija Grubišić Čabo,
Jill A. Miwa,
Signe S. Grønborg,
Jonathon M. Riley,
Jens C. Johannsen,
Cephise Cacho,
Oliver Alexander,
Richard T. Chapman,
Emma Springate,
Marco Grioni,
Jeppe V. Lauritsen,
Phil D. C. King,
Philip Hofmann,
Søren Ulstrup
Abstract:
The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band ga…
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The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
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Submitted 28 August, 2015;
originally announced August 2015.
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Electronic Structure of Epitaxial Single-Layer MoS$_2$
Authors:
Jill A. Miwa,
Søren Ulstrup,
Signe G. Sørensen,
Maciej Dendzik,
Antonija Grubišić Čabo,
Marco Bianchi,
Jeppe Vang Lauritsen,
Philip Hofmann
Abstract:
The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\barΓ$ having a significantly higher binding ener…
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The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\barΓ$ having a significantly higher binding energy than at $\bar{K}$. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at $\bar{K}$ is found to be lifted by the spin-orbit interaction, leading to a splitting of (145$\pm$4)~meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the strength of the potassium doping is $k$-dependent, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.
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Submitted 2 October, 2014;
originally announced October 2014.