Showing 1–18 of 18 results for author: Leone, S R

Attosecond transient grating spectroscopy with near-infrared grating pulses and an extreme ultraviolet diffracted probe

Authors: Rafael Quintero-Bermudez, Lorenz Drescher, Vincent Eggers, Kevin Gulu Xiong, Stephen R. Leone

Abstract: Transient grating spectroscopy has become a mainstay among metal and semiconductor characterization techniques. Here we extend the technique towards the shortest achievable timescales by using tabletop high-harmonic generation of attosecond extreme ultraviolet (XUV) pulses that diffract from transient gratings generated with 500-1000 nm sub-5 fs near-infrared (NIR) pulses. We demonstrate the power… ▽ More Transient grating spectroscopy has become a mainstay among metal and semiconductor characterization techniques. Here we extend the technique towards the shortest achievable timescales by using tabletop high-harmonic generation of attosecond extreme ultraviolet (XUV) pulses that diffract from transient gratings generated with 500-1000 nm sub-5 fs near-infrared (NIR) pulses. We demonstrate the power of attosecond transient grating spectroscopy (ATGS) by investigating the ultrafast photoexcited dynamics in an Sb semimetal thin film. ATGS provides an element-specific, background-free signal, unfettered by spectral congestion, in contrast to transient absorption spectroscopy. With the ATGS measurements in Sb polycrystalline thin films, we observe the generation of coherent phonons and investigate the lattice and carrier dynamics. Among the latter processes, we extract carrier thermalization, hot carrier cooling, and electron-hole recombination, which are on the order of 20 fs, 50 fs, and 2 ps, timescales, respectively. Furthermore, simultaneous collection of transient absorption and transient grating data allows us to extract the total complex dielectric constant in the sample dynamics, including the real-valued refractive index, from which we are also able to investigate carrier-phonon interactions and longer-lived phonon dynamics. The outlined experimental technique expands the capabilities of transient grating spectroscopy and attosecond spectroscopies by providing a wealth of information concerning carrier and lattice dynamics with an element-selective technique, at the shortest achievable timescales. △ Less

Submitted 28 July, 2024; originally announced July 2024.

Initial electron thermalization in metals measured by attosecond transient absorption spectroscopy

Authors: Bethany R. de Roulet, Lorenz Drescher, Shunsuke A. Sato, Stephen R. Leone

Abstract: Understanding initial electron thermalization has relevance to both fundamental scientific knowledge and application to the construction of novel devices. In this study, attosecond transient absorption is used to directly measure initial electron thermalization times of 38 $\pm$ 8 fs, 15 $\pm$ 3 fs, 4.2 $\pm$ 1 fs, and 2.0 $\pm$ 0.3 fs for Mg, Pt, Fe, and Co, respectively. Through time dependent d… ▽ More Understanding initial electron thermalization has relevance to both fundamental scientific knowledge and application to the construction of novel devices. In this study, attosecond transient absorption is used to directly measure initial electron thermalization times of 38 $\pm$ 8 fs, 15 $\pm$ 3 fs, 4.2 $\pm$ 1 fs, and 2.0 $\pm$ 0.3 fs for Mg, Pt, Fe, and Co, respectively. Through time dependent density function theory calculations, it is shown that the fast electron thermalization observed in Fe and Co is correlated with a strong local field effect. We find that a simple analytical model can be used to calculate the initial electron thermalization time measured by the transient extreme ultraviolet absorption spectroscopy method performed here. Our results suggest that the most significant contributions to the initial electron thermalization times are the basic metal properties of the density of states volume available for scattering and screened electron interaction. Many-body effects contribute less, but still significantly to the initial electron thermalization time. Ultimately the information gained through this study shows the unique view that attosecond transient absorption spectroscopy contributes to unraveling and monitoring electron dynamics and its connection to many-body effects in metals and beyond. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Comments: 32 pages, 13 figures

Deciphering core-exciton dynamics in CaF$_2$ with attosecond spectroscopy

Authors: Rafael Quintero-Bermudez Stephen R. Leone

Abstract: Core excitons in solids have garnered increasing interest, yet their behavior and decay mechanisms are not fully understood. Here, we use attosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with a broadband 25-45 eV sub-fs XUV pump pulse and a 500-1000 nm sub 5 fs near-infrared (NIR) supercontinuum probe pulse to monitor the excitation, dynamics, and decay of core exc… ▽ More Core excitons in solids have garnered increasing interest, yet their behavior and decay mechanisms are not fully understood. Here, we use attosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with a broadband 25-45 eV sub-fs XUV pump pulse and a 500-1000 nm sub 5 fs near-infrared (NIR) supercontinuum probe pulse to monitor the excitation, dynamics, and decay of core excitons in CaF$_2$ at the Ca$^{2+}$ M$_{2,3}$ edge. The XUV pulses are used to excite core excitons in CaF$_2$ based around the Ca$^{2+}$ and the polarization of the medium is subsequently perturbed by the time-delayed NIR pulses to measure the spectral changes and decays. A number of features are identified in the transient absorption spectrum, which suggest transfer between excitonic states, Stark shifts, and the emergence of light-induced states. We find that various core excitons identified exhibit coherence lifetimes spanning 3-7 fs. Furthermore, a NIR-intensity-dependent analysis finds a negative correlation with the coherence lifetime of various identified excitonic features, supporting a phonon-mediated mechanism as responsible for the core exciton decoherence. We present a computational band structure projection analysis strategy to estimate the orbital structure of the core excitons and determine which core excitonic transitions should be allowed by selection rules with the probe beam. This strategy is found to successfully describe the observed spectroscopic data. The outlined joint spectroscopic and computational investigation of core excitons is a powerful technique that explains the complex behavior of core excitons in solid-state materials. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 8 pages, 6 figures

On the Onset of Coherent Phonon Motion in Peierls-Distorted Antimony by Attosecond Transient Absorption

Authors: Lorenz Drescher, Bethany R. de Roulet, Yoong Sheng Phang, Stephen R. Leone

Abstract: Attosecond extreme-ultraviolet (XUV) transient absorption spectroscopy measurements on the Peierls-distorted phase of the semimetal antimony (Sb) are presented. After excitation by an ultrashort, broad band near-infrared (NIR) pulse, the distortion is (partly) lifted causing the well-known coherent phonon motion of the lattice. While the overall observed dynamics generally follow a displacive exci… ▽ More Attosecond extreme-ultraviolet (XUV) transient absorption spectroscopy measurements on the Peierls-distorted phase of the semimetal antimony (Sb) are presented. After excitation by an ultrashort, broad band near-infrared (NIR) pulse, the distortion is (partly) lifted causing the well-known coherent phonon motion of the lattice. While the overall observed dynamics generally follow a displacive excitation model, a delayed onset of the pump-induced carrier dynamics due to hot-carrier thermalization is observed, as well as a large spectral phase dependence in the coherent phonon oscillation. The observed spectral phase dependence in the coherent motion is attributed to significantly different carrier relaxation timescales for carrier energies above and near the Fermi level of the semimetal. A simple theoretical model is presented that considers the carrier relaxation timescales in the displacive phonon model to explain the observed dynamics. The results conclusively show that the overall displacive motion is not solely due to an abrupt displacement of carriers from their equilibrium configuration by the pump pulse and that carrier-relaxation effects need to be considered in the description of the phonon motion. The results furthermore show an effect of NIR field-driven shifts of band-energies, which is observed as a transient reshaping of the core-level absorption features. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Comments: 12 pages, 7 figures, 1 table

Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy

Authors: Juwon Oh, Hung-Tzu Chang, Christopher T. Chen, Shaul Aloni, Adam Schwartzberg, Stephen R. Leone

Abstract: Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV probe directly reports on occupations of optically excited holes and phonon-induced band renormalizations. By comparing with density functional theory calculations,… ▽ More Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV probe directly reports on occupations of optically excited holes and phonon-induced band renormalizations. By comparing with density functional theory calculations, XUV transient absorption due to holes are identified below the W O3 edge whereas signals at the Se M4,5 edges are dominated by phonon dynamics. Therein, 0.4 ps hole relaxation time, 1.5 ps carrier recombination time, and 1.7 ps phonon heating time are extracted. The acquisition of hole and phonon-induced signals in a single experiment can facilitate the investigation of the correlations between electron and phonon dynamics. Furthermore, the simultaneous observation of signals from different elements can be further extended to explore photochemical processes in multilayers and alloys, thereby providing key information for their applications in electronics, photocatalysts, and spintronics. △ Less

Submitted 2 March, 2023; v1 submitted 16 November, 2022; originally announced November 2022.

Comments: 26 pages, 7 figures

Coherent Phonons in Antimony: an Undergraduate Physical Chemistry Solid-State Ultrafast Laser Spectroscopy Experiment

Authors: Ilana J Porter, Michael W. Zuerch, Anne M. Baranger, Stephen R. Leone

Abstract: Ultrafast laser pump-probe spectroscopy is an important and growing field of physical chemistry that allows the measurement of chemical dynamics on their natural timescales, but undergraduate laboratory courses lack examples of such spectroscopy and the interpretation of the dynamics that occur. Here we develop and implement an ultrafast pump probe spectroscopy experiment for the undergraduate phy… ▽ More Ultrafast laser pump-probe spectroscopy is an important and growing field of physical chemistry that allows the measurement of chemical dynamics on their natural timescales, but undergraduate laboratory courses lack examples of such spectroscopy and the interpretation of the dynamics that occur. Here we develop and implement an ultrafast pump probe spectroscopy experiment for the undergraduate physical chemistry laboratory course at the University of California Berkeley. The goal of the experiment is to expose students to concepts in solid-state chemistry and ultrafast spectroscopy via classic coherent phonon dynamics principles developed by researchers over multiple decades. The experiment utilizes a modern high-repetition-rate 800 nm femtosecond Ti:Sapphire laser, split pulses with a variable time delay, and sensitive detection of transient reflectivity signals using the lock-in technique. The experiment involves minimal intervention from students and is therefore easy and safe to implement in the laboratory. Students first perform an intensity autocorrelation measurement on the femtosecond laser pulses to obtain their temporal duration. Then, students measure the pump-probe reflectivity of a single-crystal antimony sample to determine the period of coherent phonon oscillations initiated by an ultrafast pulse excitation, which is analyzed by fitting to a sine wave. Students who completed the experiment in-person obtained good experimental results, and students who took the course remotely due to the COVID-19 pandemic were provided with the data they would have obtained during the experiment to analyze. Evaluation of student written and oral reports reveals that the learning goals were met, and that students gained an appreciation for the field of ultrafast laser-induced chemistry. △ Less

Submitted 23 July, 2023; v1 submitted 21 October, 2021; originally announced October 2021.

Journal ref: Journal of Chemical Education 2023 100 (1), 342-349

Characterization of Carrier Cooling Bottleneck in Silicon Nanoparticles by Extreme Ultraviolet (XUV) Transient Absorption Spectroscopy

Authors: Ilana J. Porter, Angela Lee, Scott K. Cushing, Hung-Tzu Chang, Justin C. Ondry, A. Paul Alivisatos, Stephen R. Leone

Abstract: Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in turn reduces the cooling rate of hot carriers in the material. To verify the presence of a phonon bottleneck in silicon nanoparticles requires simultaneous resolut… ▽ More Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in turn reduces the cooling rate of hot carriers in the material. To verify the presence of a phonon bottleneck in silicon nanoparticles requires simultaneous resolution of electronic and structural changes at short timescales. Here, extreme ultraviolet transient absorption spectroscopy is used to observe the excited state electronic and lattice dynamics in polycrystalline silicon nanoparticles following 800 nm photoexcitation, which excites carriers with $0.35 \pm 0.03$ eV excess energy above the $Δ_1$ conduction band minimum. The nanoparticles have nominal 100 nm diameters with crystalline grain sized of about ~16 nm. The extracted carrier-phonon and phonon-phonon relaxation times of the nanoparticles are compared to those for a silicon (100) single crystal thin film at similar carrier densities ($2$ x $10^{19} cm^{-3}$ for the nanoparticles and $6$ x $10^{19} cm^{-3}$ for the thin film). The measured carrier-phonon and phonon-phonon scattering lifetimes for the polycrystalline nanoparticles are $870 \pm 40$ fs and $17.5 \pm 0.3$ ps, respectively, versus $195 \pm 20$ fs and $8.1 \pm 0.2$ ps, respectively, for the silicon thin film. The reduced scattering rates observed in the nanoparticles are consistent with the phonon bottleneck hypothesis. △ Less

Submitted 12 April, 2021; originally announced April 2021.

Solid-state core-exciton dynamics in NaCl observed by tabletop attosecond four-wave mixing spectroscopy

Authors: James D Gaynor, Ashley P Fidler, Yen-Cheng Lin, Hung-Tzu Chang, Michael Zuerch, Daniel M Neumark, Stephen R Leone

Abstract: Nonlinear wave-mixing in solids with ultrafast x-rays can provide new insight into complex electronic dynamics of materials. Here, tabletop-based attosecond noncollinear four-wave mixing (FWM) spectroscopy using one extreme ultraviolet (XUV) pulse from high harmonic generation and two separately timed few-cycle near-infrared (NIR) pulses characterizes the dynamics of the Na+ L2,3 edge core-exciton… ▽ More Nonlinear wave-mixing in solids with ultrafast x-rays can provide new insight into complex electronic dynamics of materials. Here, tabletop-based attosecond noncollinear four-wave mixing (FWM) spectroscopy using one extreme ultraviolet (XUV) pulse from high harmonic generation and two separately timed few-cycle near-infrared (NIR) pulses characterizes the dynamics of the Na+ L2,3 edge core-excitons in NaCl around 33.5 eV. An inhomogeneous distribution of core-excitons underlying the well-known doublet absorption of the Na+ Γ-point core-exciton spectrum is deconvoluted by the resonance-enhanced nonlinear wave-mixing spectroscopy. In addition, other dark excitonic states that are coupled to the XUV-allowed levels by the NIR pulses are characterized spectrally and temporally. Approximate sub-10 femtosecond coherence lifetimes of the core-exciton states are observed. The core-excitonic properties are discussed in the context of strong electron-hole exchange interactions, electron-electron correlation, and electron-phonon broadening. This investigation successfully indicates that tabletop attosecond FWM spectroscopies represent a viable technique for time-resolved solid-state measurements. △ Less

Submitted 26 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. B 103, 245140 (2021)

Coupled Valence Carrier and Core-Exciton Dynamics in WS$_{2}$ Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy

Authors: Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen, Juwon Oh, Romain Géneaux, Yi-De Chuang, Adam M. Schwartzberg, Shaul Aloni, Daniel M. Neumark, Stephen R. Leone

Abstract: Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$ at the W O$_3$ edge (37-45 eV) and carrier-induced modifications of core-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access to continuous core-to-conduction… ▽ More Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$ at the W O$_3$ edge (37-45 eV) and carrier-induced modifications of core-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access to continuous core-to-conduction band absorption features and discrete core-exciton transitions in the same XUV spectral region in a semiconductor provides a novel means to investigate the effect of carrier excitation on core-exciton dynamics. The core-level transient absorption spectra, measured with either pulse arriving first to explore both core-level and valence carrier dynamics, reveal that core-exciton transitions are strongly influenced by the photoexcited carriers. A $1.2\pm0.3$ ps hole-phonon relaxation time and a $3.1\pm0.4$ ps carrier recombination time are extracted from the XUV transient absorption spectra from the core-to-conduction band transitions at the W O$_{3}$ edge. Global fitting of the transient absorption signal at the W N$_{6,7}$ edge yields $\sim 10$ fs coherence lifetimes of core-exciton states and reveals that the photoexcited carriers, which alter the electronic screening and band filling, are the dominant contributor to the spectral modifications of core-excitons and direct field-induced changes play a minor role. This work provides a first look at the modulations of core-exciton states by photoexcited carriers and advances our understanding of carrier dynamics in metal dichalcogenides. △ Less

Submitted 4 August, 2021; v1 submitted 17 March, 2021; originally announced March 2021.

Comments: 18 pages, 13 figures

Journal ref: Phys. Rev. B 104, 064309 (2021)

Coherent energy exchange between carriers and phonons in Peierls-distorted bismuth unveiled by broadband XUV pulses

Authors: Romain Géneaux, Iurii Timrov, Christopher J. Kaplan, Andrew D. Ross, Peter M. Kraus, Stephen R. Leone

Abstract: In Peierls-distorted materials, photoexcitation leads to a strongly coupled transient response between structural and electronic degrees of freedom, always measured independently of each other. Here we use transient reflectivity in the extreme ultraviolet to quantify both responses in photoexcited bismuth in a single measurement. With the help of first-principles calculations based on density-func… ▽ More In Peierls-distorted materials, photoexcitation leads to a strongly coupled transient response between structural and electronic degrees of freedom, always measured independently of each other. Here we use transient reflectivity in the extreme ultraviolet to quantify both responses in photoexcited bismuth in a single measurement. With the help of first-principles calculations based on density-functional theory (DFT) and time-dependent DFT, the real-space atomic motion and the temperature of both electrons and holes as a function of time are captured simultaneously, retrieving an anticorrelation between the $A_{1g}$ phonon dynamics and carrier temperature. The results reveal a coherent, bi-directional energy exchange between carriers and phonons, which is a dynamical counterpart of the static Peierls-Jones distortion, providing first-time validation of previous theoretical predictions. △ Less

Submitted 11 August, 2021; v1 submitted 4 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. Research 3, 033210 (2021)

Electron Thermalization and Relaxation in Laser-Heated Nickel by Few-Femtosecond Core-Level Transient Absorption Spectroscopy

Authors: Hung-Tzu Chang, Alexander Guggenmos, Scott K. Cushing, Yang Cui, Naseem Ud Din, Shree Ram Acharya, Ilana J. Porter, Ulf Kleineberg, Volodymyr Turkowski, Talat S. Rahman, Daniel M. Neumark, Stephen R. Leone

Abstract: Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape of photoexcited nickel can be described by a Gaussian broadening ($σ$) and a red shift ($ω_{s}$) of the ground state absorption spectrum. Theory predicts, and t… ▽ More Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape of photoexcited nickel can be described by a Gaussian broadening ($σ$) and a red shift ($ω_{s}$) of the ground state absorption spectrum. Theory predicts, and the experimental results verify that after initial rapid carrier thermalization, the electron temperature increase ($ΔT$) is linearly proportional to the Gaussian broadening factor $σ$, providing quantitative real-time tracking of the relaxation of the electron temperature. Measurements reveal an electron cooling time for 50 nm thick polycrystalline nickel films of 640$\pm$80 fs. With hot thermalized carriers, the spectral red shift exhibits a power-law relationship with the change in electron temperature of $ω_{s}\proptoΔT^{1.5}$. Rapid electron thermalization via carrier-carrier scattering accompanies and follows the nominal 4 fs photoexcitation pulse until the carriers reach a quasi-thermal equilibrium. Entwined with a <6 fs instrument response function, carrier thermalization times ranging from 34 fs to 13 fs are estimated from experimental data acquired at different pump fluences and it is observed that the electron thermalization time decreases with increasing pump fluence. The study provides an initial example of measuring electron temperature and thermalization in metals in real time with XUV light, and it lays a foundation for further investigation of photoinduced phase transitions and carrier transport in metals with core-level absorption spectroscopy. △ Less

Submitted 5 January, 2021; v1 submitted 29 September, 2020; originally announced September 2020.

Comments: 20 pages, 8 figures

Journal ref: Phys. Rev. B 103, 064305 (2021)

Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe$_{2}$ with Femtosecond Core-Level Spectroscopy

Authors: Andrew R. Attar, Hung-Tzu Chang, Alexander Britz, Xiang Zhang, Ming-Fu Lin, Aravind Krishnamoorthy, Thomas Linker, David Fritz, Daniel M. Neumark, Rajiv K. Kalia, Aiichiro Nakano, Pulickel Ajayan, Priya Vashishta, Uwe Bergmann, Stephen R. Leone

Abstract: We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, th… ▽ More We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15$\pm$5 fs and 380$\pm$90 fs, respectively, and an electron-hole recombination time of 1.5$\pm$0.1 ps. Furthermore, excitations of coherent out-of-plane A$_{1g}$ (5.1 THz) and in-plane E$_{1g}$ (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A$_{1g}$ coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe$_{2}$ within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials. △ Less

Submitted 14 October, 2020; v1 submitted 1 September, 2020; originally announced September 2020.

Attosecond time-domain measurement of core-excitonic decay in magnesium oxide

Authors: Romain Géneaux, Christopher J. Kaplan, Lun Yue, Andrew D. Ross, Jens E. Bækhøj, Peter M. Kraus, Hung-Tzu Chang, Alexander Guggenmos, Mi-Ying Huang, Michael Zürch, Kenneth J. Schafer, Daniel M. Neumark, Mette B. Gaarde, Stephen R. Leone

Abstract: Excitation of ionic solids with extreme ultraviolet pulses creates localized core-excitons, which in some cases couple strongly to the lattice. Here, core-excitonic states of magnesium oxide are studied in the time domain at the Mg $\text{L}_{2,3}$ edge with attosecond transient reflectivity spectroscopy. Attosecond pulses trigger the excitation of these short-lived quasiparticles, whose decay is… ▽ More Excitation of ionic solids with extreme ultraviolet pulses creates localized core-excitons, which in some cases couple strongly to the lattice. Here, core-excitonic states of magnesium oxide are studied in the time domain at the Mg $\text{L}_{2,3}$ edge with attosecond transient reflectivity spectroscopy. Attosecond pulses trigger the excitation of these short-lived quasiparticles, whose decay is perturbed by time-delayed near infrared optical pulses. Combined with a few-state theoretical model, this reveals that the optical pulse shifts the energy of bright core-exciton states as well as induces features arising from dark core-excitons. We report coherence lifetimes for the first two core-excitons of $2.3 \pm 0.2$ and $1.6 \pm 0.5$ femtoseconds and show that these short lifetimes are primarily a consequence of strong exciton-phonon coupling, disclosing the drastic influence of structural effects in this ultrafast relaxation process. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Lett. 124, 207401 (2020)

Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy

Authors: Scott K. Cushing, Angela Lee, Ilana J. Porter, Lucas M. Carneiro, Hung-Tzu Chang, Michael Zürch, Stephen R. Leone

Abstract: Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole created by the XUV transition modifies the measurement of photoexcited electron and hole energies. Here, the Si {Ł_{2,3}} edge is measured after photoexcitation of electrons to the Δ, L, and Γ valleys of Si(100). The measu… ▽ More Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole created by the XUV transition modifies the measurement of photoexcited electron and hole energies. Here, the Si {Ł_{2,3}} edge is measured after photoexcitation of electrons to the Δ, L, and Γ valleys of Si(100). The measured changes in the XUV transition probability do not energetically agree with the increasing electron photoexcitation energy. The data therefore experimentally confirm that, for the Si {Ł_{2,3}} edge, the time-dependent electron and hole energies are partially obscured by the core-hole perturbation. A model based on many-body approximations and the Bethe-Salpeter equation is successfully used to predict the core-hole{\apos}s modification of the final transition density of states in terms of both electronic and structural dynamics. The resulting fit time constants match the excited state electron thermalization time and the inter-valley electron-phonon, intra-valley electron-phonon, and phonon-phonon scattering times previously measured in silicon. The outlined approach is a more comprehensive framework for interpreting transient XUV absorption spectra in photoexcited semiconductors. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Journal ref: J. Phys. Chem. C, 2019, 123, 6, 3343-3352

Photoexcited Small Polaron Formation in Goethite (α-FeOOH) Nanorods Probed by Transient Extreme Ultraviolet Spectroscopy

Authors: Ilana J. Porter, Scott K. Cushing, Lucas M. Carneiro, Angela Lee, Justin C. Ondry, Jakob C. Dahl, Hung-Tzu Chang, A. Paul Alivisatos, Stephen R. Leone

Abstract: Small polaron formation limits the mobility and lifetimes of photoexcited carriers in metal oxides. As the ligand field strength increases, the carrier mobility decreases, but the effect on the photoexcited small polaron formation is still unknown. Extreme ultraviolet transient absorption spectroscopy is employed to measure small polaron formation rates and probabilities in goethite (α-FeOOH) crys… ▽ More Small polaron formation limits the mobility and lifetimes of photoexcited carriers in metal oxides. As the ligand field strength increases, the carrier mobility decreases, but the effect on the photoexcited small polaron formation is still unknown. Extreme ultraviolet transient absorption spectroscopy is employed to measure small polaron formation rates and probabilities in goethite (α-FeOOH) crystalline nanorods at pump photon energies from 2.2 to 3.1 eV. The measured polaron formation time increases with excitation photon energy from 70 {\pm} 10 fs at 2.2 eV to 350 {\pm} 30 fs at 2.6 eV, whereas the polaron formation probability (85 {\pm} 10%) remains constant. By comparison to hematite (α-Fe2O3), an oxide analog, the role of ligand composition and metal center density in small polaron formation time is discussed. This work suggests that incorporating small changes in ligands and crystal structure could enable the control of photoexcited small polaron formation in metal oxides. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Journal ref: J. Phys. Chem. Lett.2018,9,14,4120-4124

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode

Authors: Scott K. Cushing, Ilana J. Porter, Bethany R. Lamoureux, Angela Lee, Brett M. Marsh, Szilard Szoke, Mihai E. Vaida, Stephen R. Leone

Abstract: Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction. After photoexcitation of silicon, holes are inferred to transport from Si to Ni ballistically in ~100 fs, result… ▽ More Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction. After photoexcitation of silicon, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in spectral shifts in the Ni M2,3 XUV edge that are characteristic of holes and the absence of holes initially in TiO2. Meanwhile, the electrons are observed to remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Hot Phonon and Carrier Relaxation in Si(100) Determined by Transient Extreme Ultraviolet Spectroscopy

Authors: Scott K. Cushing, Michael Zürch, Peter M. Kraus, Lucas M. Carneiro, Angela Lee, Hung-Tzu Chang, Christopher J. Kaplan, Stephen R. Leone

Abstract: The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot… ▽ More The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot carrier and phonon thermalization in Si(100) from tens of femtoseconds to 200 ps following photoexcitation of the indirect transition to the Δ valley at 800 nm. The ground state XUV spectrum is first theoretically predicted using a combination of a single plasmon pole model and the Bethe-Salpeter equation (BSE) with density functional theory (DFT). The excited state spectrum is predicted by incorporating the electronic effects of photo-induced state-filling, broadening, and band-gap renormalization into the ground state XUV spectrum. A time-dependent lattice deformation and expansion is also required to describe the excited state spectrum. The kinetics of these structural components match the kinetics of phonons excited from the electron-phonon and phonon-phonon scattering processes following photoexcitation. Separating the contributions of electronic and structural effects on the transient XUV spectra allows the carrier population, the population of phonons involved in inter- and intra-valley electron-phonon scattering, and the population of phonons involved in phonon-phonon scattering to be quantified as a function of delay time. △ Less

Submitted 30 July, 2018; v1 submitted 11 May, 2017; originally announced May 2017.

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Authors: Michael Zürch, Hung-Tzu Chang, Lauren J. Borja, Peter M. Kraus, Scott K. Cushing, Andrey Gandman, Christopher J. Kaplan, Myoung Hwan Oh, James S. Prell, David Prendergast, Chaitanya D. Pemmaraju, Daniel M. Neumark, Stephen R. Leone

Abstract: Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and si… ▽ More Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Comments: Includes Supplementary Information

Journal ref: Nature Communications 8, 15734 (2017)