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Direct Nanopatterning of Complex 3D Surfaces and Self-Aligned Superlattices via Molecular-Beam Holographic Lithography
Authors:
Shuangshuang Zeng,
Tian Tian,
Jiwoo Oh,
Chih-Jen Shih
Abstract:
Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity and overlay accuracy. Here we explore a concept based on the moiré interference of molecular beams to directly pattern complex three-dimensional (3D) surfaces ma…
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Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity and overlay accuracy. Here we explore a concept based on the moiré interference of molecular beams to directly pattern complex three-dimensional (3D) surfaces made by any evaporable materials, such as metals, oxides and organic semiconductors. Our proposed approach, termed the Molecular-Beam Holographic Lithography (MBHL), relies on precise control over angular projections of material flux passing through nanoapertures superimposed on the substrate, emulating the interference of coherent laser beams in interference lithography. Incorporating with our computational lithography (CL) algorithm, we have demonstrated self-aligned overlay of multiple material patterns to yield binary up to quinary superlattices, with a critical dimension and overlay accuracy on the order of 50 and 2 nanometers, respectively. The process is expected to substantially expand the boundary of materials combination for high-throughput fabrication of complex superstructures of translational symmetry on arbitrary substrates, enabling new nanoimaging, sensing, catalysis, and optoelectronic devices.
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Submitted 18 July, 2024; v1 submitted 17 July, 2024;
originally announced July 2024.
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Dimensionality Engineering of Magnetic Anisotropy from Anomalous Hall Effect in Synthetic SrRuO3 Crystals
Authors:
Seung Gyo Jeong,
Seong Won Cho,
Sehwan Song,
Jin Young Oh,
Do Gyeom Jeong,
Gyeongtak Han,
Hu Young Jeong,
Ahmed Yousef Mohamed,
Woo-suk Noh,
Sungkyun Park,
Jong Seok Lee,
Suyoun Lee,
Young-Min Kim,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designi…
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Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1,500% improvement of coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Submitted 3 July, 2024;
originally announced July 2024.
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Long-lived magnetization in an atomic spin chain tuned to a diabolic point
Authors:
R. J. G. Elbertse,
D. Borodin,
J. Oh,
T. Ahn,
J. Hwang,
J. C. Rietveld,
A. J. Heinrich,
F. Delgado,
S. Otte,
Y. Bae
Abstract:
Scaling magnets down to where quantum size effects become prominent triggers quantum tunneling of magnetization (QTM), profoundly influencing magnetization dynamics. Measuring magnetization switching in an Fe atomic chain under a carefully tuned transverse magnetic field, we observe a non-monotonic variation of magnetization lifetimes around a level crossing, known as the diabolic point (DP). Near…
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Scaling magnets down to where quantum size effects become prominent triggers quantum tunneling of magnetization (QTM), profoundly influencing magnetization dynamics. Measuring magnetization switching in an Fe atomic chain under a carefully tuned transverse magnetic field, we observe a non-monotonic variation of magnetization lifetimes around a level crossing, known as the diabolic point (DP). Near DPs, local environment effects causing QTM are efficiently suppressed, enhancing lifetimes by three orders of magnitude. Adjusting interatomic interactions further facilitates multiple DPs. Our study provides a deeper understanding of quantum dynamics near DPs and enhances our ability to engineer a quantum magnet.
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Submitted 2 July, 2024;
originally announced July 2024.
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Ubiquitous Flat Bands in a Cr-based Kagome Superconductor
Authors:
Yucheng Guo,
Zehao Wang,
Fang Xie,
Yuefei Huang,
Bin Gao,
Ji Seop Oh,
Han Wu,
Zhaoyu Liu,
Zheng Ren,
Yuan Fang,
Ananya Biswas,
Yichen Zhang,
Ziqin Yue,
Cheng Hu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Makoto Hashimoto,
Donghui Lu,
Junichiro Kono,
Jiun-Haw Chu,
Boris I Yakobson,
Robert J Birgeneau,
Qimiao Si,
Pengcheng Dai
, et al. (1 additional authors not shown)
Abstract:
In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic…
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In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic instabilities that lead to emergent electronic orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their participation in emergent electronic orders have been lacking in bulk quantum materials. Here using a combination of Angle-Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT), we reveal that the low-energy electronic structure of the recently discovered Cr-based kagome metal superconductor CsCr3Sb5 is dominated by a pervasive FB in close proximity to, and below the Fermi level. A comparative analysis with orbital-projected DFT and polarization dependence measurement uncovers that an orbital-selective renormalization mechanism is needed to reconcile the discrepancy with the DFT calculations, which predict the FB to appear 200 meV above the Fermi level. Furthermore, we observe the FB to shift away from the Fermi level by 20 meV in the low-temperature density wave-ordered phase, highlighting the role of the FB in the emergent electronic order. Our results reveal CsCr3Sb5 to stand out as a promising platform for further exploration into the effects of FBs near the Fermi level on kagome lattices, and their role in emergent orders in bulk quantum materials.
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Submitted 12 June, 2024; v1 submitted 7 June, 2024;
originally announced June 2024.
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Characterization of a graphene-hBN superlattice field effect transistor
Authors:
Won Beom Choi,
Youngoh Son,
Hangyeol Park,
Yungi Jeong,
Junhyeok Oh,
K. Watanabe,
T. Taniguchi,
Joonho Jang
Abstract:
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor.…
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Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.
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Submitted 12 July, 2024; v1 submitted 10 May, 2024;
originally announced May 2024.
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Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films
Authors:
Seung Gyo Jeong,
In Hyeok Choi,
Sreejith Nair,
Luca Buiarelli,
Bita Pourbahari,
Jin Young Oh,
Nabil Bassim,
Ambrose Seo,
Woo Seok Choi,
Rafael M. Fernandes,
Turan Birol,
Liuyan Zhao,
Jong Seok Lee,
Bharat Jalan
Abstract:
Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measu…
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Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measurements, we establish a phase diagram in hybrid molecular beam epitaxy-grown RuO2/TiO2 (110) films, mapping the broken symmetries along the altermagnetic/electronic/structural phase transitions as functions of film thickness and temperature. This phase diagram features a novel altermagnetic metallic polar phase in strained 2 nm samples, extending the concept of multiferroics to altermagnetic systems. These results provide a comprehensive understanding of altermagnetism upon epitaxial heterostructure design for emergent novel phases with multifunctionalities.
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Submitted 9 May, 2024;
originally announced May 2024.
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Nanomolecular OLED Pixelization Enabling Electroluminescent Metasurfaces
Authors:
Tommaso Marcato,
Jiwoo Oh,
Zhan-Hong Lin,
Sunil B. Shivarudraiah,
Sudhir Kumar,
Shuangshuang Zeng,
Chih-Jen Shih
Abstract:
Miniaturization of light-emitting diodes (LEDs) can enable high-resolution augmented and virtual reality displays and on-chip light sources for ultra-broadband chiplet communication. However, unlike silicon scaling in electronic integrated circuits, patterning of inorganic III-V semiconductors in LEDs considerably compromises device efficiencies at submicrometer scales. Here, we present the scalab…
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Miniaturization of light-emitting diodes (LEDs) can enable high-resolution augmented and virtual reality displays and on-chip light sources for ultra-broadband chiplet communication. However, unlike silicon scaling in electronic integrated circuits, patterning of inorganic III-V semiconductors in LEDs considerably compromises device efficiencies at submicrometer scales. Here, we present the scalable fabrication of nanoscale organic LEDs (nano-OLEDs), with the highest array density (>84,000 pixels per inch) and the smallest pixel size (~100 nm) ever reported to date. Direct nanomolecular patterning of organic semiconductors is realized by self-aligned evaporation through nanoapertures fabricated on a free-standing silicon nitride film adhering to the substrate. The average external quantum efficiencies (EQEs) extracted from a nano-OLED device of more than 4 megapixels reach up to 10%. At the subwavelength scale, individual pixels act as electroluminescent meta-atoms forming metasurfaces that directly convert electricity into modulated light. The diffractive coupling between nano-pixels enables control over the far-field emission properties, including directionality and polarization. The results presented here lay the foundation for bright surface light sources of dimension smaller than the Abbe diffraction limit, offering new technological platforms for super-resolution imaging, spectroscopy, sensing, and hybrid integrated photonics.
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Submitted 8 April, 2024;
originally announced April 2024.
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Tunability of charge density wave in a magnetic kagome metal
Authors:
Ji Seop Oh,
Ananya Biswas,
Mason Klemm,
Hengxin Tan,
Makoto Hashimoto,
Donghui Lu,
Binghai Yan,
Pengcheng Dai,
Robert J. Birgeneau,
Ming Yi
Abstract:
The discovery of the charge density wave order (CDW) within a magnetically ordered phase in the kagome lattice FeGe has provided a promising platform to investigate intertwined degrees of freedom in kagome lattices. Recently, a method based on post-annealing has been suggested to manipulate the CDW order in kagome FeGe towards either long-range or suppressed orders. Here, we provide a comprehensiv…
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The discovery of the charge density wave order (CDW) within a magnetically ordered phase in the kagome lattice FeGe has provided a promising platform to investigate intertwined degrees of freedom in kagome lattices. Recently, a method based on post-annealing has been suggested to manipulate the CDW order in kagome FeGe towards either long-range or suppressed orders. Here, we provide a comprehensive comparison of the experimentally measured electronic structures of FeGe crystals that have undergone different post-annealing procedures and demonstrate the remarkable effectiveness on tuning the CDW gap without strong perturbation on the underlying electronic structure. Moreover, we observe an additional low temperature transition that only appears in crystals with a long-range CDW order, which we associate with a lattice-spin coupled order. Our work indicates a likely strong sensitivity of the CDW order to disorder in FeGe, and provides evidence for strong coupling between the electronic, lattice, and spin degrees of freedom in this kagome magnet.
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Submitted 2 April, 2024;
originally announced April 2024.
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Tailoring Physical Properties of Crystals through Synthetic Temperature Control: A Case Study for new Polymorphic NbFeTe2 phases
Authors:
Hanlin Wu,
Sheng Li,
Yan Lyu,
Yucheng Guo,
Wenhao Liu,
Ji Seop Oh,
Yichen Zhang,
Sung-Kwan Mo,
Clarina dela Cruz,
Robert J. Birgeneau,
Keith M. Taddei,
Ming Yi,
Li Yang,
Bing Lv
Abstract:
Growth parameters play a significant role in the crystal quality and physical properties of layered materials. Here we present a case study on a van der Waals magnetic NbFeTe2 material. Two different types of polymorphic NbFeTe2 phases, synthesized at different temperatures, display significantly different behaviors in crystal symmetry, electronic structure, electrical transport, and magnetism. Wh…
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Growth parameters play a significant role in the crystal quality and physical properties of layered materials. Here we present a case study on a van der Waals magnetic NbFeTe2 material. Two different types of polymorphic NbFeTe2 phases, synthesized at different temperatures, display significantly different behaviors in crystal symmetry, electronic structure, electrical transport, and magnetism. While the phase synthesized at low temperature showing behavior consistent with previous reports, the new phase synthesized at high temperature, has completely different physical properties, such as metallic resistivity, long-range ferromagnetic order, anomalous Hall effect, negative magnetoresistance, and distinct electronic structures. Neutron diffraction reveals out-of-plane ferromagnetism below 70K, consistent with the electrical transport and magnetic susceptibility studies. Our work suggests that simply tuning synthetic parameters in a controlled manner could be an effective route to alter the physical properties of existing materials potentially unlocking new states of matter, or even discovering new materials.
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Submitted 20 March, 2024;
originally announced March 2024.
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Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
Authors:
David P. Pappas,
Mark Field,
Cameron Kopas,
Joel A. Howard,
Xiqiao Wang,
Ella Lachman,
Lin Zhou,
Jinsu Oh,
Kameshwar Yadavalli,
Eyob A. Sete,
Andrew Bestwick,
Matthew J. Kramer,
Joshua Y. Mutus
Abstract:
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl…
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We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
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Submitted 19 July, 2024; v1 submitted 14 January, 2024;
originally announced January 2024.
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Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
Authors:
Seung Gyo Jeong,
Jin Young Oh,
Lin Hao,
Jian Liu,
Woo Seok Choi
Abstract:
Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide…
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Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, Jeff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.
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Submitted 27 December, 2023;
originally announced December 2023.
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Singular Hall response from a correlated ferromagnetic flat nodal-line semimetal
Authors:
Woohyun Cho,
Yoon-Gu Kang,
Jaehun Cha,
Dong Hyun David Lee,
Do Hoon Kiem,
Jaewhan Oh,
Jongho Park,
Changyoung Kim,
Yongsoo Yang,
Yeong Kwan Kim,
Myung Joon Han,
Heejun Yang
Abstract:
Topological quantum phases have been largely understood in weakly correlated systems, which have identified various quantum phenomena such as spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. He…
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Topological quantum phases have been largely understood in weakly correlated systems, which have identified various quantum phenomena such as spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, we report singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in an itinerant, van der Waals ferromagnetic semimetal, Fe3GaTe2, with a high Curie temperature of Tc=360 K. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe3GaTe2, which implies heavy fermion features in this ferromagnetic topological material. Our circular dichroism in angle-resolved photoemission spectroscopy and theoretical calculations support the original electronic features in the material. Thus, low-dimensional Fe3GaTe2 with electronic correlation, topology, and room-temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.
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Submitted 20 December, 2023;
originally announced December 2023.
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Two-Step Electronic Response to Magnetic Ordering in a van der Waals Ferromagnet
Authors:
Han Wu,
Jian-Xin Zhu,
Lebing Chen,
Matthew W Butcher,
Ziqin Yue,
Dongsheng Yuan,
Yu He,
Ji Seop Oh,
Jianwei Huang,
Shan Wu,
Cheng Gong,
Yucheng Guo,
Sung-Kwan Mo,
Jonathan D. Denlinger,
Donghui Lu,
Makoto Hashimoto,
Matthew B. Stone,
Alexander I. Kolesnikov,
Songxue Chi,
Junichiro Kono,
Andriy H. Nevidomskyy,
Robert J. Birgeneau,
Pengcheng Dai,
Ming Yi
Abstract:
The two-dimensional (2D) material Cr$_2$Ge$_2$Te$_6$ is a member of the class of insulating van der Waals magnets. Here, using high resolution angle-resolved photoemission spectroscopy in a detailed temperature dependence study, we identify a clear response of the electronic structure to a dimensional crossover in the form of two distinct temperature scales marking onsets of modifications in the e…
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The two-dimensional (2D) material Cr$_2$Ge$_2$Te$_6$ is a member of the class of insulating van der Waals magnets. Here, using high resolution angle-resolved photoemission spectroscopy in a detailed temperature dependence study, we identify a clear response of the electronic structure to a dimensional crossover in the form of two distinct temperature scales marking onsets of modifications in the electronic structure. Specifically, we observe Te $p$-orbital-dominated bands to undergo changes at the Curie transition temperature T$_C$ while the Cr $d$-orbital-dominated bands begin evolving at a higher temperature scale. Combined with neutron scattering, density functional theory calculations, and Monte Carlo simulations, we find that the electronic system can be consistently understood to respond sequentially to the distinct temperatures at which in-plane and out-of-plane spin correlations exceed a characteristic length scale. Our findings reveal the sensitivity of the orbital-selective electronic structure for probing the dynamical evolution of local moment correlations in vdW insulating magnets.
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Submitted 20 December, 2023; v1 submitted 18 December, 2023;
originally announced December 2023.
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Exotic magnetic anisotropy near digitized dimensional Mott boundary
Authors:
Seung Gyo Jeong,
Jihyun Kim,
Taewon Min,
Sehwan Song,
Jin Young Oh,
Woo-suk Noh,
Sungkyun Park,
Tuson Park,
Jong Mok Ok,
Jaekwang Lee,
Woo Seok Choi
Abstract:
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed…
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The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. Our results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.
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Submitted 15 November, 2023;
originally announced November 2023.
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Theory of Orbital Pumping
Authors:
Seungyun Han,
Hye-Won Ko,
Jung Hyun Oh,
Hyun-Woo Lee,
Kyung-Jin Lee,
Kyoung-Whan Kim
Abstract:
We develop a theory of orbital pumping, which corresponds to the emission of orbital currents from orbital dynamics. This phenomenon exhibits two distinct characteristics compared to spin pumping. Firstly, while spin pumping generates solely spin (angular momentum) currents, orbital pumping yields both orbital angular momentum currents and orbital angular position currents. Secondly, lattice vibra…
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We develop a theory of orbital pumping, which corresponds to the emission of orbital currents from orbital dynamics. This phenomenon exhibits two distinct characteristics compared to spin pumping. Firstly, while spin pumping generates solely spin (angular momentum) currents, orbital pumping yields both orbital angular momentum currents and orbital angular position currents. Secondly, lattice vibrations induce orbital dynamics and associated orbital pumping as the orbital angular position is directly coupled to the lattice. These pumped orbital currents can be detected as transverse electric voltages via the inverse orbital(-torsion) Hall effect, stemming from orbital textures. Our work proposes a new avenue for generating orbital currents and provides a broader understanding of angular momentum dynamics encompassing spin, orbital, and phonon.
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Submitted 1 November, 2023;
originally announced November 2023.
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Electrically Driven Spin Resonance of 4f Electrons in a Single Atom on a Surface
Authors:
Stefano Reale,
Jiyoon Hwang,
Jeongmin Oh,
Harald Brune,
Andreas J. Heinrich,
Fabio Donati,
Yujeong Bae
Abstract:
A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to this dilemma if provided with a rational design for manipulation and detection. Here we construct tailored spin structures to perform electron spin resonance on…
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A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to this dilemma if provided with a rational design for manipulation and detection. Here we construct tailored spin structures to perform electron spin resonance on a single lanthanide atom using a scanning tunneling microscope. A magnetically coupled structure made of an erbium and a titanium atom enables us to both drive the erbium's 4f electron spins and indirectly probe them through the titanium's 3d electrons. In this coupled configuration, the erbium spin states exhibit a five-fold increase in the spin relaxation time and a two-fold increase in the driving efficiency compared to the 3d electron counterparts. Our work provides a new approach to accessing highly protected spin states, enabling their coherent control in an all-electric fashion.
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Submitted 26 September, 2023; v1 submitted 5 September, 2023;
originally announced September 2023.
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Evidence of Pseudogravitational Distortions of the Fermi Surface Geometry in the Antiferromagnetic Metal FeRh
Authors:
Joseph Sklenar,
Soho Shim,
Hilal Saglam,
Junseok Oh,
M. G. Vergniory,
Axel Hoffmann,
Barry Bradlyn,
Nadya Mason,
Matthew J. Gilbert
Abstract:
The confluence between high-energy physics and condensed matter has produced groundbreaking results via unexpected connections between the two traditionally disparate areas. In this work, we elucidate additional connectivity between high-energy and condensed matter physics by examining the interplay between spin-orbit interactions and local symmetry-breaking magnetic order in the magnetotransport…
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The confluence between high-energy physics and condensed matter has produced groundbreaking results via unexpected connections between the two traditionally disparate areas. In this work, we elucidate additional connectivity between high-energy and condensed matter physics by examining the interplay between spin-orbit interactions and local symmetry-breaking magnetic order in the magnetotransport of thin-film magnetic semimetal FeRh. We show that the change in sign of the normalized longitudinal magnetoresistance observed as a function of increasing in-plane magnetic field results from changes in the Fermi surface morphology. We demonstrate that the geometric distortions in the Fermi surface morphology are more clearly understood via the presence of pseudogravitational fields in the low-energy theory. The pseudogravitational connection provides additional insights into the origins of a ubiquitous phenomenon observed in many common magnetic materials and points to an alternative methodology for understanding phenomena in locally-ordered materials with strong spin-orbit interactions.
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Submitted 31 July, 2023;
originally announced August 2023.
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Reversible Non-Volatile Electronic Switching in a Near Room Temperature van der Waals Ferromagnet
Authors:
Han Wu,
Lei Chen,
Paul Malinowski,
Jianwei Huang,
Qinwen Deng,
Kirsty Scott,
Bo Gyu Jang,
Jacob P. C. Ruff,
Yu He,
Xiang Chen,
Chaowei Hu,
Ziqin Yue,
Ji Seop Oh,
Xiaokun Teng,
Yucheng Guo,
Mason Klemm,
Chuqiao Shi,
Yue Shi,
Chandan Setty,
Tyler Werner,
Makoto Hashimoto,
Donghui Lu,
T. Yilmaz,
Elio Vescovo,
Sung-Kwan Mo
, et al. (15 additional authors not shown)
Abstract:
The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to toggle between a crystalline and an amorphous state with distinct electrical properties. To expand such kind of switching between two topologically distinct phases…
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The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to toggle between a crystalline and an amorphous state with distinct electrical properties. To expand such kind of switching between two topologically distinct phases requires non-volatile switching between two crystalline phases with distinct symmetries. Here we report the observation of reversible and non-volatile switching between two stable and closely-related crystal structures with remarkably distinct electronic structures in the near room temperature van der Waals ferromagnet Fe$_{5-δ}$GeTe$_2$. From a combination of characterization techniques we show that the switching is enabled by the ordering and disordering of an Fe site vacancy that results in distinct crystalline symmetries of the two phases that can be controlled by a thermal annealing and quenching method. Furthermore, from symmetry analysis as well as first principle calculations, we provide understanding of the key distinction in the observed electronic structures of the two phases: topological nodal lines compatible with the preserved global inversion symmetry in the site-disordered phase, and flat bands resulting from quantum destructive interference on a bipartite crystaline lattice formed by the presence of the site order as well as the lifting of the topological degeneracy due to the broken inversion symmetry in the site-ordered phase. Our work not only reveals a rich variety of quantum phases emergent in the metallic van der Waals ferromagnets due to the presence of site ordering, but also demonstrates the potential of these highly tunable two-dimensional magnets for memory and spintronics applications.
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Submitted 6 July, 2023;
originally announced July 2023.
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Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures
Authors:
Wontaek Kim,
Gyouil Jeong,
Juseung Oh,
Jihun Kim,
Kenji Watanabe,
Takashi Taniguchi,
Sunmin Ryu
Abstract:
The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness that circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such hetero-syste…
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The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness that circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such hetero-systems remains unexplored. In this study, we investigate exciton sensitized SHG in heterobilayers of transition metal dichalcogenides (TMDs), where photoexcitation of one donor layer enhances the SHG response of the other as an acceptor. We utilize polarization-resolved interferometry to detect the SHG intensity and phase of each individual layer, revealing the energetic match between the excitonic resonances of donors and the SHG enhancement of acceptors for four TMD combinations. Our results also uncover the dynamic nature of interlayer coupling, as evidenced by the dependence of sensitization on interlayer gap spacing and the average power of the fundamental beam. This work provides insights into how interlayer coupling of two different layers can modify nonlinear optical phenomena in 2D heterostructures.
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Submitted 28 October, 2023; v1 submitted 27 May, 2023;
originally announced May 2023.
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Revealing the Three-Dimensional Arrangement of Polar Topology in Nanoparticles
Authors:
Chaehwa Jeong,
Juhyeok Lee,
Hyesung Jo,
Jaewhan Oh,
Hionsuck Baik,
Kyoung-June Go,
Junwoo Son,
Si-Young Choi,
Sergey Prosandeev,
Laurent Bellaiche,
Yongsoo Yang
Abstract:
In the early 2000s, low dimensional systems were predicted to have topologically nontrivial polar structures, such as vortices or skyrmions, depending on mechanical or electrical boundary conditions. A few variants of these structures have been experimentally observed in thin film model systems, where they are engineered by balancing electrostatic charge and elastic distortion energies. However, t…
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In the early 2000s, low dimensional systems were predicted to have topologically nontrivial polar structures, such as vortices or skyrmions, depending on mechanical or electrical boundary conditions. A few variants of these structures have been experimentally observed in thin film model systems, where they are engineered by balancing electrostatic charge and elastic distortion energies. However, the measurement and classification of topological textures for general ferroelectric nanostructures have remained elusive, as it requires mapping the local polarization at the atomic scale in three dimensions. Here we unveil topological polar structures in ferroelectric BaTiO3 nanoparticles via atomic electron tomography, which enables us to reconstruct the full three-dimensional arrangement of cation atoms at an individual atom level. Our three-dimensional polarization maps reveal clear topological orderings, along with evidence of size-dependent topological transitions from a single vortex structure to multiple vortices, consistent with theoretical predictions. The discovery of the predicted topological polar ordering in nanoscale ferroelectrics, independent of epitaxial strain, widens the research perspective and offers potential for practical applications utilizing contact-free switchable toroidal moments.
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Submitted 15 December, 2023; v1 submitted 7 May, 2023;
originally announced May 2023.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
Jin-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Observation of Flat Bands and Dirac Cones in a Pyrochlore Lattice Superconductor
Authors:
Jianwei Huang,
Chandan Setty,
Liangzi Deng,
Jing-Yang You,
Hongxiong Liu,
Sen Shao,
Ji Seop Oh,
Yucheng Guo,
Yichen Zhang,
Ziqin Yue,
Jia-Xin Yin,
Makoto Hashimoto,
Donghui Lu,
Sergey Gorovikov,
Pengcheng Dai,
Jonathan D. Denlinger,
M. Zahid Hasan,
Yuan-Ping Feng,
Robert J. Birgeneau,
Youguo Shi,
Ching-Wu Chu,
Guoqing Chang,
Qimiao Si,
Ming Yi
Abstract:
Emergent phases often appear when the electronic kinetic energy is comparable to the Coulomb interactions. One approach to seek material systems as hosts of such emergent phases is to realize localization of electronic wavefunctions due to the geometric frustration inherent in the crystal structure, resulting in flat electronic bands. Recently, such efforts have found a wide range of exotic phases…
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Emergent phases often appear when the electronic kinetic energy is comparable to the Coulomb interactions. One approach to seek material systems as hosts of such emergent phases is to realize localization of electronic wavefunctions due to the geometric frustration inherent in the crystal structure, resulting in flat electronic bands. Recently, such efforts have found a wide range of exotic phases in the two-dimensional kagome lattice, including magnetic order, time-reversal symmetry breaking charge order, nematicity, and superconductivity. However, the interlayer coupling of the kagome layers disrupts the destructive interference needed to completely quench the kinetic energy. Here we demonstrate that an interwoven kagome network-a pyrochlore lattice-can host a three dimensional (3D) localization of electron wavefunctions. Meanwhile, the nonsymmorphic symmetry of the pyrochlore lattice guarantees all band crossings at the Brillouin zone X point to be 3D gapless Dirac points, which was predicted theoretically but never yet observed experimentally. Through a combination of angle-resolved photoemission spectroscopy, fundamental lattice model and density functional theory calculations, we investigate the novel electronic structure of a Laves phase superconductor with a pyrochlore sublattice, CeRu$_2$. We observe flat bands originating from both the Ce 4$f$ orbitals as well as from the 3D destructive interference of the Ru 4$d$ orbitals. We further observe the nonsymmorphic symmetry-protected 3D gapless Dirac cones at the X point. Our work establishes the pyrochlore structure as a promising lattice platform to realize and tune novel emergent phases intertwining topology and many-body interactions.
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Submitted 14 December, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe$_4$
Authors:
Yichen Zhang,
Ruixiang Zhou,
Hanlin Wu,
Ji Seop Oh,
Sheng Li,
Jianwei Huang,
Jonathan D. Denlinger,
Makoto Hashimoto,
Donghui Lu,
Sung-Kwan Mo,
Kevin F. Kelly,
Gregory T. McCandless,
Julia Y. Chan,
Robert J. Birgeneau,
Bing Lv,
Gang Li,
Ming Yi
Abstract:
The interplay between charge order (CO) and nontrivial band topology has spurred tremendous interest in understanding topological excitations beyond the single-particle description. In a quasi-one-dimensional nonsymmorphic crystal TaTe$_4$, the (2a$\times$2b$\times$3c) charge ordered ground state drives the system into a space group where the symmetry indicator features the emergence of Dirac ferm…
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The interplay between charge order (CO) and nontrivial band topology has spurred tremendous interest in understanding topological excitations beyond the single-particle description. In a quasi-one-dimensional nonsymmorphic crystal TaTe$_4$, the (2a$\times$2b$\times$3c) charge ordered ground state drives the system into a space group where the symmetry indicator features the emergence of Dirac fermions and unconventional double Dirac fermions. Using angle-resolved photoemission spectroscopy and first-principles calculations, we provide evidence of the CO induced Dirac fermion-related bands near the Fermi level. Furthermore, the band folding at the Fermi level is compatible with the new periodicity dictated by the CO, indicating that the electrons near the Fermi level follow the crystalline symmetries needed to host double Dirac fermions in this system.
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Submitted 25 March, 2024; v1 submitted 1 April, 2023;
originally announced April 2023.
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Nanoscale visualization and spectral fingerprints of the charge order in ScV6Sn6 distinct from other kagome metals
Authors:
Siyu Cheng,
Zheng Ren,
Hong Li,
Jiseop Oh,
Hengxin Tan,
Ganesh Pokharel,
Jonathan M. DeStefano,
Elliott Rosenberg,
Yucheng Guo,
Yichen Zhang,
Ziqin Yue,
Yongbin Lee,
Sergey Gorovikov,
Marta Zonno,
Makoto Hashimoto,
Donghui Lu,
Liqin Ke,
Federico Mazzola,
Junichiro Kono,
R. J. Birgeneau,
Jiun-Haw Chu,
Stephen D. Wilson,
Ziqiang Wang,
Binghai Yan,
Ming Yi
, et al. (1 additional authors not shown)
Abstract:
Charge density waves (CDWs) have been tied to a number of unusual phenomena in kagome metals, including rotation symmetry breaking, time-reversal symmetry breaking and superconductivity. The majority of the experiments thus far have focused on the CDW states in AV3Sb5 and FeGe, characterized by the 2a0 by 2a0 period. Recently, a bulk CDW phase (T* ~ 92 K) with a different wave length and orientati…
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Charge density waves (CDWs) have been tied to a number of unusual phenomena in kagome metals, including rotation symmetry breaking, time-reversal symmetry breaking and superconductivity. The majority of the experiments thus far have focused on the CDW states in AV3Sb5 and FeGe, characterized by the 2a0 by 2a0 period. Recently, a bulk CDW phase (T* ~ 92 K) with a different wave length and orientation has been reported in ScV6Sn6, as the first realization of a CDW state in the broad RM6X6 structure. Here, using a combination of scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal the microscopic structure and the spectroscopic signatures of this charge ordering phase in ScV6Sn6. Differential conductance dI/dV spectra show a partial gap opening in the density-of-states of about 20 meV at the Fermi level. This is much smaller than the spectral gaps observed in AV3Sb5 and FeGe despite the comparable T* temperatures in these systems, suggesting substantially weaker coupling strength in ScV6Sn6. Surprisingly, despite the three-dimensional bulk nature of the charge order, we find that the charge modulation is only observed on the kagome termination. Temperature-dependent band structure evolution suggests a modulation of the surface states as a consequence of the emergent charge order, with an abrupt spectral weight shift below T* consistent with the first-order phase transition. The similarity of the electronic band structures of ScV6Sn6 and TbV6Sn6 (where charge ordering is absent), together with the first-principle calculations, suggests that charge ordering in ScV6Sn6 may not be primarily electronically driven. Interestingly, in contrast to the CDW state of cousin AV3Sb5, we find no evidence supporting rotation symmetry breaking. Our results reveal a distinctive nature of the charge ordering phase in ScV6Sn6 in comparison to other kagome metals.
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Submitted 23 February, 2023;
originally announced February 2023.
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Ideal Weak Topological Insulator and Protected Helical Saddle Points
Authors:
Ji Seop Oh,
Tianyi Xu,
Nikhil Dhale,
Sheng Li,
Chao Lei,
Chiho Yoon,
Wenhao Liu,
Jianwei Huang,
Hanlin Wu,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Chun Ning Lau,
Bing Lv,
Fan Zhang,
Robert Birgeneau,
Ming Yi
Abstract:
The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even among…
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The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even amongst those identified, none exists with topological surface states (TSS) exposed in a global bulk band gap that is stable at all temperatures. Here we report the design and observation of an ideal WTI in a quasi-one-dimensional (quasi-1D) bismuth halide, Bi$_{4}$I$_{1.2}$Br$_{2.8}$ (BIB). Via angle-resolved photoemission spectroscopy (ARPES), we identify that BIB hosts TSS on the (100)$\prime$ side surface in the form of two anisotropic $π$-offset Dirac cones (DCs) separated in momentum while topologically dark on the (001) top surface. The ARPES data fully determine a unique side-surface Hamiltonian and thereby identify two pairs of non-degenerate helical saddle points and a series of four Lifshitz transitions. The fact that both the surface Dirac and saddle points are in the global bulk band gap of 195 meV, combined with the small Dirac velocities, nontrivial spin texture, and the near-gap chemical potential, qualifies BIB to be not only an ideal WTI but also a fertile ground for topological many-body physics.
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Submitted 30 January, 2023; v1 submitted 29 January, 2023;
originally announced January 2023.
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Application of Machine Learning to Sporadic Experimental Data for Understanding Epitaxial Strain Relaxation
Authors:
Jin Young Oh,
Dongwon Shin,
Woo Seok Choi
Abstract:
Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available.…
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Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available. First, we have collected and refined reported hc of perovskite oxide thin film/substrate system to construct a consistent sub-dataset which captures a common trend among the varying experimental details. Then, we employ correlation analyses and feature engineering to find the most relevant feature set which include Poisson's ratio and lattice mismatch. With the insight offered by correlation analyses and feature engineering, machine learning (ML) models have been trained to deduce a decent accuracy, which has been further validated experimentally. the demonstrated framework is expected to be efficiently extended to the other classes of thin films in understanding hc.
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Submitted 5 January, 2023;
originally announced January 2023.
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Dynamic effect of electron-number parity in metal nanoparticles
Authors:
K. Son,
D. Park,
C. Lee,
A. Lascialfari,
S. H. Yoon,
K. Y. Choi,
A. Reyes,
J. Oh,
M. Kim,
F. Borsa,
G. Scheutz,
Y. G. Yoon,
Z. H. Jang
Abstract:
Parity is a ubiquitous notion in science and serves as a fundamental principle for describing a physical system. Nanometer-scale metal objects are predicted to show dramatic differences in physical properties depending on the electron-number parity. However, the identification of the electron-number parity effects in real metal nanoparticles has remained elusive because of the variations in variou…
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Parity is a ubiquitous notion in science and serves as a fundamental principle for describing a physical system. Nanometer-scale metal objects are predicted to show dramatic differences in physical properties depending on the electron-number parity. However, the identification of the electron-number parity effects in real metal nanoparticles has remained elusive because of the variations in various features of nanoparticles. Here we report the nuclear magnetic resonance (NMR) detection of the dynamic effect of the electron-number parity in silver nanoparticles. With theoretical modeling of the NMR relaxation in silver nanoparticles, the measured nuclear spin-lattice relaxation rate is found to be proportional to the electron-number-parity-dependent susceptibility and to the temperature. This observation demonstrates the electron-number-parity-governed spin dynamics in silver nanoparticles.
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Submitted 23 November, 2022;
originally announced November 2022.
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Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy
Authors:
Juwon Oh,
Hung-Tzu Chang,
Christopher T. Chen,
Shaul Aloni,
Adam Schwartzberg,
Stephen R. Leone
Abstract:
Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV probe directly reports on occupations of optically excited holes and phonon-induced band renormalizations. By comparing with density functional theory calculations,…
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Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV probe directly reports on occupations of optically excited holes and phonon-induced band renormalizations. By comparing with density functional theory calculations, XUV transient absorption due to holes are identified below the W O3 edge whereas signals at the Se M4,5 edges are dominated by phonon dynamics. Therein, 0.4 ps hole relaxation time, 1.5 ps carrier recombination time, and 1.7 ps phonon heating time are extracted. The acquisition of hole and phonon-induced signals in a single experiment can facilitate the investigation of the correlations between electron and phonon dynamics. Furthermore, the simultaneous observation of signals from different elements can be further extended to explore photochemical processes in multilayers and alloys, thereby providing key information for their applications in electronics, photocatalysts, and spintronics.
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Submitted 2 March, 2023; v1 submitted 16 November, 2022;
originally announced November 2022.
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Kramers nodal lines and Weyl fermions in SmAlSi
Authors:
Yichen Zhang,
Yuxiang Gao,
Xue-Jian Gao,
Shiming Lei,
Zhuoliang Ni,
Ji Seop Oh,
Jianwei Huang,
Ziqin Yue,
Marta Zonno,
Sergey Gorovikov,
Makoto Hashimoto,
Donghui Lu,
Jonathan D. Denlinger,
Robert J. Birgeneau,
Junichiro Kono,
Liang Wu,
Kam Tuen Law,
Emilia Morosan,
Ming Yi
Abstract:
Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been…
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Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been experimentally established. Here we gather the experimental evidence pointing at the presence of KNLs in SmAlSi, a non-centrosymmetric metal that develops incommensurate spin density wave order at low temperature. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and magneto-transport methods, we provide evidence suggesting the presence of KNLs, together with observing Weyl fermions under the broken inversion symmetry in the paramagnetic phase of SmAlSi. We discuss the nesting possibilities regarding the emergent magnetic orders in SmAlSi. Our results provide a solid basis of experimental observations for exploring correlated topology in SmAlSi.
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Submitted 9 June, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$
Authors:
Kejian Qu,
Zachary W. Riedel,
Irián Sánchez-Ramírez,
Simon Bettler,
Junseok Oh,
Emily N. Waite,
Nadya Mason,
Peter Abbamonte,
Fernando de Juan Sanz,
Maia G. Vergniory,
Daniel P. Shoemaker
Abstract:
The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (Nb$_4$Se$_{15}$I$_2$)I$_2$ were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional…
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The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (Nb$_4$Se$_{15}$I$_2$)I$_2$ were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional (Nb$_4$Se$_{15}$I$_2$)$_n$ chains along the [101] direction, with two I$^-$ ions per formula unit directly bonded to Nb$^{5+}$. The other two I$^-$ ions are loosely coordinated and intercalate between the chains. Individual chains are chiral, and stack along the $b$ axis in opposing directions, giving space group $P2_1/c$. The phase purity and crystal structure was verified by powder XRD. Density functional theory calculations show (Nb$_4$Se$_{15}$I$_2$)I$_2$ to be a semiconductor with a direct band gap of around 0.6 eV. Resistivity measurements of bulk crystals and micro-patterned devices demonstrate that (Nb$_4$Se$_{15}$I$_2$)I$_2$ has an activation energy of around 0.1 eV, and no anomaly or transition was seen upon cooling. (Nb$_4$Se$_{15}$I$_2$)I$_2$ does not undergo structural phase transformation from room temperature down to 8.2 K, based on cryogenic temperature single crystal XRD. This compound represents a well-characterized and valence-precise member of a diverse family of anisotropic transition metal chalcogenides.
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Submitted 20 October, 2022;
originally announced October 2022.
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Intertwined magnetism and charge density wave order in kagome FeGe
Authors:
Xiaokun Teng,
Ji Seop Oh,
Hengxin Tan,
Lebing Chen,
Jianwei Huang,
Bin Gao,
Jia-Xin Yin,
Jiun-Haw Chu,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Garrett E. Granroth,
Binghai Yan,
Robert J. Birgeneau,
Pengcheng Dai,
Ming Yi
Abstract:
Electron correlations often lead to emergent orders in quantum materials. Kagome lattice materials are emerging as an exciting platform for realizing quantum topology in the presence of electron correlations. This proposal stems from the key signatures of electronic structures associated with its lattice geometry: flat band induced by destructive interference of the electronic wavefunctions, topol…
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Electron correlations often lead to emergent orders in quantum materials. Kagome lattice materials are emerging as an exciting platform for realizing quantum topology in the presence of electron correlations. This proposal stems from the key signatures of electronic structures associated with its lattice geometry: flat band induced by destructive interference of the electronic wavefunctions, topological Dirac crossing, and a pair of van Hove singularities (vHSs). A plethora of correlated electronic phases have been discovered amongst kagome lattice materials, including magnetism, charge density wave (CDW), nematicity, and superconductivity. These materials can be largely organized into two types: those that host magnetism and those that host CDW order. Recently, a CDW order has been discovered in the magnetic kagome FeGe, providing a new platform for understanding the interplay between CDW and magnetism. Here, utilizing angle-resolved photoemission spectroscopy, we observe all three types of electronic signatures of the kagome lattice: flat bands, Dirac crossings, and vHSs. From both the observation of a temperature-dependent shift of the vHSs towards the Fermi level as well as guidance via first-principle calculations, we identify the presence of the vHSs near the Fermi level (EF) to be driven by the development of underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the CDW order as gaps that open on the near-EF vHS bands, as well as evidence of electron-phonon coupling from a kink on the vHS band together with phonon hardening observed by inelastic neutron scattering. Our observation points to the magnetic interaction-driven band modification resulting in the formation of the CDW order, indicating an intertwined connection between the emergent magnetism and vHS charge order in this moderately-correlated kagome metal.
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Submitted 12 October, 2022;
originally announced October 2022.
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Conversion between metavalent and covalent bond in metastable superlattices composed of 2D and 3D sublayers
Authors:
Dasol Kim,
Youngsam Kim,
Jin-Su Oh,
Changwoo Lee,
Hyeonwook Lim,
Cheol-Woong Yang,
Eunji Sim,
Mann-Ho Cho
Abstract:
Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of crystal structures from stable states via redistribution of vacancies, researches on kinetic behavior of the vacancies are highly on demand. However, they remain…
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Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of crystal structures from stable states via redistribution of vacancies, researches on kinetic behavior of the vacancies are highly on demand. However, they remain lacking due to difficulties with experimental analysis. Herein, the direct observation of the evolution of chemical states of vacancies clarifies the behavior by combining analysis on charge density distribution, electrical conductivity, and crystal structures. Site-switching of vacancies gradually occurs with diverged energy barriers owing to a unique activation code-the accumulation of vacancies triggers spontaneous gliding along atomic planes to relieve electrostatic repulsion. Study on the behavior can be further applied to multi-phase superlattices composed of Sb2Te3 (2D) and GeTe (3D) sublayers, which represent the superior memory performances but their operating mechanisms were still under debates due to their complexity. The site-switching is favorable (suppressed) when Te-Te bonds are formed as physisorption (chemisorption) over the interface between Sb2Te3 (2D) and GeTe (3D) sublayers driven by configurational entropic gain (electrostatic enthalpic loss). Depending on the type of interfaces between sublayers, phases of the superlattices are classified into metastable and stable states, where the conversion could be only achieved in the metastable state. From this comprehensive understanding on the operating mechanism via kinetic behaviors of vacancies and the metastability, further studies towards vacancy engineering are expected in versatile materials.
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Submitted 28 September, 2022;
originally announced September 2022.
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Correlating Nanoscale Structure with Electrochemical Property of Solid Electrolyte Interphases in Solid-State Battery Electrodes
Authors:
Jimin Oh,
Gun Park,
Hongjun Kim,
Sujung Kim,
Dong Ok Shin,
Kwang Man Kim,
Hye Ryung Byon,
Young-Gi Lee,
Seungbum Hong
Abstract:
Here, we correlate the nanoscale morphology and chemical composition of solid electrolyte interphases (SEI) with the electrochemical property of graphite-based composite electrodes. Using electrochemical strain microscopy (ESM) and X-ray photoelectron spectroscopy (XPS), changes of chemical composition and morphology (Li and F distribution) in SEI layers on the electrodes as a function of solid el…
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Here, we correlate the nanoscale morphology and chemical composition of solid electrolyte interphases (SEI) with the electrochemical property of graphite-based composite electrodes. Using electrochemical strain microscopy (ESM) and X-ray photoelectron spectroscopy (XPS), changes of chemical composition and morphology (Li and F distribution) in SEI layers on the electrodes as a function of solid electrolyte contents are analyzed. As a result, we find a strong correlation between morphological variations on the electrode, Li and F distribution in SEI layer, and Coulomb efficiency. This correlation determines the optimum composition of the composite electrode surface that can maximize the physical and chemical uniformity of the solid electrolyte on the electrode, which is a key parameter to increase electrochemical performance in solid-state batteries.
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Submitted 8 September, 2022;
originally announced September 2022.
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Development of a Scanning Tunneling Microscope for Variable Temperature Electron Spin Resonance
Authors:
Jiyoon Hwang,
Denis Krylov,
Robertus J. G. Elbertse,
Sangwon Yoon,
Taehong Ahn,
Jeongmin Oh,
Lei Fang,
Won-jun Jang,
Franklin H. Cho,
Andreas J. Heinrich,
Yujeong Bae
Abstract:
Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet.…
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Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet. Our STM design allows for the deposition of atoms and molecules directly into the cold STM, eliminating the need to extract the sample for deposition. In addition, we adopt two methods to apply radio-frequency (RF) voltages to the tunnel junction, the early design of wiring to the STM tip directly, and a more recent idea to use an RF antenna. Direct comparisons of ESR results measured using the two methods and simulations of electric field distribution around the tunnel junction show that, despite their different designs and capacitive couplings to the tunnel junction, there is no discernible difference in the driving and detection of ESR. Furthermore, at a magnetic field of 1.6 T, we observe ESR signals (near 40 GHz) sustained up to 10 K, which is the highest temperature for ESR-STM measurement reported to date, to the best of our knowledge. Although the ESR intensity exponentially decreases with increasing temperature, our ESR-STM system with low noise at the tunnel junction allows us to measure weak ESR signals with intensities in the sub-fA range. Our new design of ESR-STM, which is operational in a large frequency and temperature range, can broaden the use of ESR spectroscopy in STM and enable the simple modification of existing STM systems, which will hopefully accelerate a generalized use of ESR-STM.
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Submitted 23 August, 2022;
originally announced August 2022.
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Local imaging of diamagnetism in proximity coupled niobium nano-island arrays on gold thin films
Authors:
Logan Bishop-Van Horn,
Irene P. Zhang,
Emily N. Waite,
Ian Mondragon-Shem,
Scott Jensen,
Junseok Oh,
Tom Lippman,
Malcolm Durkin,
Taylor L. Hughes,
Nadya Mason,
Kathryn A. Moler,
Ilya Sochnikov
Abstract:
In this work we study the effect of engineered disorder on the local magnetic response of proximity coupled superconducting island arrays by comparing scanning Superconducting Quantum Interference Device (SQUID) susceptibility measurements to a model in which we treat the system as a network of one-dimensional (1D) superconductor-normal metal-superconductor (SNS) Josephson junctions, each with a J…
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In this work we study the effect of engineered disorder on the local magnetic response of proximity coupled superconducting island arrays by comparing scanning Superconducting Quantum Interference Device (SQUID) susceptibility measurements to a model in which we treat the system as a network of one-dimensional (1D) superconductor-normal metal-superconductor (SNS) Josephson junctions, each with a Josephson coupling energy $E_J$ determined by the junction length or distance between islands. We find that the disordered arrays exhibit a spatially inhomogeneous diamagnetic response which, for low local applied magnetic fields, is well described by this junction network model, and we discuss these results as they relate to inhomogeneous two-dimensional (2D) superconductors. Our model of the static magnetic response of the arrays does not fully capture the onset of nonlinearity and dissipation with increasing applied field, as these effects are associated with vortex motion due to the dynamic nature of the scanning SQUID susceptometry measurement. This work demonstrates a model 2D superconducting system with engineered disorder and highlights the impact of dissipation on the local magnetic properties of 2D superconductors and Josephson junction arrays.
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Submitted 18 August, 2022;
originally announced August 2022.
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Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$
Authors:
Shiming Lei,
Kevin Allen,
Jianwei Huang,
Jaime M. Moya,
Tsz Chun Wu,
Brian Casas,
Yichen Zhang,
Ji Seop Oh,
Makoto Hashimoto,
Donghui Lu,
Jonathan Denlinger,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Luis Balicas,
Robert Birgeneau,
Matthew S. Foster,
Ming Yi,
Yan Sun,
Emilia Morosan
Abstract:
Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity o…
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Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4 as a new magnetic Weyl nodal ring (NR) semimetal, in which the line nodes form closed rings in the vicinity of the Fermi level. Remarkably, the Weyl NR states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic TSMs. High field magnetoresistance measurements indicate no saturation up to 40 T. Our theoretical model indicates that the nonsaturating MR naturally arises as a consequence of the Weyl NR state. Our work thus point to the realization of Weyl NR states in square-net magnetic materials, and opens new avenues for the design of magnetic TSMs with very large magnetoresistance.
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Submitted 14 December, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Understanding the Mechanism of the Performance Improvement in Nitrogen-doped Niobium Superconducting Radio Frequency Cavity
Authors:
Xiaotian Fang,
Jin-Su Oh,
Matt Kramer,
A. Romanenko,
A. Grassellino,
John Zasadzinski,
Lin Zhou
Abstract:
Niobium superconducting radiofrequency cavities enable applications in modern accelerators and quantum computers. However, the surface resistance significantly deteriorates the cavities performance. Nitrogen doping surface treatment can consistently increase cavity performance by reducing surface resistance, but the improvement mechanism is not fully understood. Herein, we employed transmission el…
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Niobium superconducting radiofrequency cavities enable applications in modern accelerators and quantum computers. However, the surface resistance significantly deteriorates the cavities performance. Nitrogen doping surface treatment can consistently increase cavity performance by reducing surface resistance, but the improvement mechanism is not fully understood. Herein, we employed transmission electron microscopy and spectroscopy to uncover the structural and chemical differences of the Nb-air interface between the non-doped and nitrogen-doped cavities. The results indicate that nitrogen doping passivates the Nb surface by introducing a compressive strain close to the Nb/air interface, which impedes the oxygen diffusion and hydrogen atoms and reduces surface oxide thickness.
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Submitted 26 July, 2022;
originally announced July 2022.
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Quasiparticle spectroscopy, transport, and magnetic properties of Nb films used in superconducting transmon qubits
Authors:
Kamal R. Joshi,
Sunil Ghimire,
Makariy A. Tanatar,
Amlan Datta,
Jin-Su Oh,
Lin Zhou,
Cameron J. Kopas,
Jayss Marshall,
Josh Y. Mutus,
Julie Slaughter,
Matthew J. Kramer,
James A. Sauls,
Ruslan Prozorov
Abstract:
Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circui…
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Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circuits such as those used in quantum computers. The films show outstanding superconducting transition temperature of $T_{c}=9.35$ K and a fairly clean superconducting gap, along with superfluid density enhanced at intermediate temperatures. These observations are consistent with the recent theory of anisotropic strong-coupling superconductivity in Nb. However, the response to the magnetic field is complicated, exhibiting significantly irreversible behavior and insufficient heat conductance leading to thermo-magnetic instabilities. These may present an issue for further improvement of transmon quantum coherence. Possible mitigation strategies are discussed.
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Submitted 23 July, 2022;
originally announced July 2022.
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Visualizing heterogeneous dipole fields by terahertz light coupling in individual nano-junctions used in transmon qubits
Authors:
R. H. J. Kim,
J. M. Park,
S. Haeuser,
C. Huang,
D. Cheng,
T. Koschny,
J. Oh,
C. Kopas,
H. Cansizoglu,
K. Yadavalli,
J. Mutus,
L. Zhou,
L. Luo,
M. Kramer,
J. Wang
Abstract:
The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnet…
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The fundamental challenge underlying superconducting quantum computing is to characterize heterogeneity and disorder in the underlying quantum circuits. These nonuniform distributions often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. It is particularly challenging to probe deep sub-wavelength electric field distribution under electromagnetic wave coupling at individual nano-junctions and correlate them with structural imperfections from interface and boundary, ubiquitous in Josephson junctions (JJ) used in transmon qubits. A major obstacle lies in the fact that conventional microscopy tools are incapable of measuring simultaneous at nanometer and terahertz, "nano-THz" scales, which often associate with frequency-dependent charge scattering in nano-junctions. Here we directly visualize interface nano-dipole near-field distribution of individual Al/AlO$_{x}$/Al junctions used in transmon qubits. Our THz nanoscope images show a remarkable asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as "hot" vs "cold" cusp spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in JJ fabrication inside qubit devices. The asymmetric nano-dipole electric field contrast also correlates with distinguishing, "overshoot" frequency dependence that characterizes the charge scattering and dissipation at nanoscale, hidden in responses from topographic, structural imaging and spatially-averaged techniques. The real space mapping of junction dipole fields and THz charge scattering can be extended to guide qubit nano-fabrication for ultimately optimizing qubit coherence times.
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Submitted 13 July, 2022;
originally announced July 2022.
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Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers
Authors:
Soho Shim,
M. Mehraeen,
Joseph Sklenar,
Junseok Oh,
Jonathan Gibbons,
Hilal Saglam,
Axel Hoffmann,
Steven S. -L. Zhang,
Nadya Mason
Abstract:
The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistan…
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The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistance changes under the reversal of the current direction, can provide rich insights into the transport properties of spin-orbit coupled systems. However, UMR has never been observed in antiferromagnets before, given the absence of intrinsic spin-dependent scattering. Here, we report a UMR in the antiferromagnetic phase of a FeRh$|$Pt bilayer, which undergoes a sign change and then increases strongly with an increasing external magnetic field, in contrast to UMRs in ferromagnetic and nonmagnetic systems. We show that Rashba spin-orbit coupling alone cannot explain the sizable UMR in the antiferromagnetic bilayer and that field-induced spin canting distorts the Fermi contours to greatly enhance the UMR by two orders of magnitude. Our results can motivate the growing field of antiferromagnetic spintronics, and suggest a route to the development of tunable antiferromagnet-based spintronics devices.
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Submitted 5 July, 2022;
originally announced July 2022.
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Uniaxial ferromagnetism in the kagome metal TbV${_6}$Sn${_6}$
Authors:
Elliott Rosenberg,
Jonathan M. DeStefano,
Yucheng Guo,
Ji Seop Oh,
Makoto Hashimoto,
Donghui Lu,
Robert J. Birgeneau,
Yongbin Lee,
Liqin Ke,
Ming Yi,
Jiun-Haw Chu
Abstract:
The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic suscept…
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The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic susceptibility measurements, and both resistivity and magnetization measurements exhibit hysteresis in magnetic field. Furthermore, a strikingly large anisotropy in the magnetic susceptibility was observed, with the c-axis susceptibility nearly 100 times the ab plane susceptibility at 2K. This is highly suggestive of uniaxial ferromagnetism, and the large size of 9.4$μ_b$/f.u. indicates the Tb$^{3+}$ $4f$ electronic moments cooperatively align perpendicular to the V kagome lattice plane. The entropy at the phase transition is nearly Rln(2), indicating that the CEF ground state of the Tb$^{3+}$ ion is a doublet, and therefore the sublattice of $4f$ electrons in this material can be shown to map at low temperatures to the Ising model in a D$_{6h}$ symmetry environment. Hall measurements at temperatures from 300K to 1.7K can be described by two-band carrier transport at temperatures below around 150K, with a large increase in both hole and electron mobilities, similar to YV$_6$Sn$_6$, and an anomalous Hall effect is seen below the ordering temperature. Angle-resolved photoemission measurements above the magnetic ordering temperature reveal typical kagome dispersions. Our study presents TbV${_6}$Sn${_6}$ as an ideal system to study the interplay between Ising ferromagnetism and non-trivial electronic states emerging from a kagome lattice.
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Submitted 29 May, 2022;
originally announced May 2022.
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Spectral Evidence for Unidirectional Charge Density Wave in Detwinned BaNi$_2$As$_2$
Authors:
Yucheng Guo,
Mason Klemm,
Ji Seop Oh,
Yaofeng Xie,
Bing-Hua Lei,
Sergey Gorovikov,
Tor Pedersen,
Matteo Michiardi,
Sergey Zhdanovich,
Andrea Damascelli,
Jonathan Denlinger,
Makoto Hashimoto,
Donghui Lu,
Sung-Kwan Mo,
Rob G. Moore,
Robert J. Birgeneau,
David J. Singh,
Pengcheng Dai,
Ming Yi
Abstract:
The emergence of unconventional superconductivity in proximity to intertwined electronic orders is especially relevant in the case of iron-based superconductors. Such order consists of an electronic nematic order and a spin density wave in these systems. BaNi$_2$As$_2$, like its well-known iron-based analog BaFe$_2$As$_2$, also hosts a symmetry-breaking structural transition that is coupled to a u…
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The emergence of unconventional superconductivity in proximity to intertwined electronic orders is especially relevant in the case of iron-based superconductors. Such order consists of an electronic nematic order and a spin density wave in these systems. BaNi$_2$As$_2$, like its well-known iron-based analog BaFe$_2$As$_2$, also hosts a symmetry-breaking structural transition that is coupled to a unidirectional charge density wave (CDW), providing a novel platform to study intertwined orders. Here, through a systematic angle-resolved photoemission spectroscopy study combined with a detwinning $B_1g$ uniaxial strain, we identify distinct spectral evidence of band evolution due to the structural transition as well as CDW-induced band folding. In contrast to the nematicity and spin density wave in BaFe$_2$As$_2$, the structural and CDW order parameters in BaNi$_2$As$_2$ are observed to be strongly coupled and do not separate in the presence of uniaxial strain. Our measurements point to a likely lattice origin of the CDW in BaNi$_2$As$_2$.
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Submitted 28 May, 2022;
originally announced May 2022.
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Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit
Authors:
Jin-Su Oh,
Xiaotian Fang,
Tae-Hoon Kim,
Matt Lynn,
Matt Kramer,
Mehdi Zarea,
James A. Sauls,
A. Romanenko,
S. Posen,
A. Grassellino,
Cameron J. Kopas,
Mark Field,
Jayss Marshall,
Hilal Cansizoglu,
Joshua Y. Mutus,
Matthew Reagor,
Lin Zhou
Abstract:
Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive stud…
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Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating.
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Submitted 12 April, 2022;
originally announced April 2022.
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Discovery of charge density wave in a correlated kagome lattice antiferromagnet
Authors:
Xiaokun Teng,
Lebing Chen,
Feng Ye,
Elliott Rosenberg,
Zhaoyu Liu,
Jia-Xin Yin,
Yu-Xiao Jiang,
Ji Seop Oh,
M. Zahid Hasan,
Kelly J. Neubauer,
Bin Gao,
Yaofeng Xie,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Robert J. Birgeneau,
Jiun-Haw Chu,
Ming Yi,
Pengcheng Dai
Abstract:
A hallmark of strongly correlated quantum materials is the rich phase diagram resulting from competing and intertwined phases with nearly degenerate ground state energies. A well-known example is the copper oxides, where a charge density wave (CDW) is ordered well above and strongly coupled to the magnetic order to form spin-charge separated stripes that compete with superconductivity. Recently, s…
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A hallmark of strongly correlated quantum materials is the rich phase diagram resulting from competing and intertwined phases with nearly degenerate ground state energies. A well-known example is the copper oxides, where a charge density wave (CDW) is ordered well above and strongly coupled to the magnetic order to form spin-charge separated stripes that compete with superconductivity. Recently, such rich phase diagrams have also been revealed in correlated topological materials. In two-dimensional kagome lattice metals consisting of corner-sharing triangles, the geometry of the lattice can produce flat bands with localized electrons, non-trivial topology, chiral magnetic order, superconductivity and CDW order. While CDW has been found in weakly electron correlated nonmagnetic AV3Sb5 (A = K, Rb, Cs), it has not yet been observed in correlated magnetic ordered kagome lattice metals. Here we report the discovery of CDW within the antiferromagnetic (AFM) ordered phase of kagome lattice FeGe. The CDW in FeGe occurs at wavevectors identical to that of AV3Sb5, enhances the AFM ordered moment, and induces an emergent anomalous Hall effect. Our findings suggest that CDW in FeGe arises from the combination of electron correlations-driven AFM order and van Hove singularities-driven instability possibly associated with a chiral flux phase, in stark contrast to strongly correlated copper oxides and nickelates, where the CDW precedes or accompanies the magnetic order.
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Submitted 22 March, 2022;
originally announced March 2022.
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Nonsymmorphic Symmetry-Protected Band Crossings in a Square-Net Metal PtPb$_4$
Authors:
Han Wu,
Alannah M. Hallas,
Xiaochan Cai,
Jianwei Huang,
Ji Seop Oh,
Vaideesh Loganathan,
Ashley Weiland,
Gregory T. McCandless,
Julia Y. Chan,
Sung-Kwan Mo,
Donghui Lu,
Makoto Hashimoto,
Jonathan Denlinger,
Robert J. Birgeneau,
Andriy H. Nevidomskyy,
Gang Li,
Emilia Morosan,
Ming Yi
Abstract:
Topological semimetals with symmetry-protected band crossings have emerged as a rich landscape to explore intriguing electronic phenomena. Nonsymmorphic symmetries in particular have been shown to play an important role in protecting the crossings along a line (rather than a point) in momentum space. Here we report experimental and theoretical evidence for Dirac nodal line crossings along the Bril…
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Topological semimetals with symmetry-protected band crossings have emerged as a rich landscape to explore intriguing electronic phenomena. Nonsymmorphic symmetries in particular have been shown to play an important role in protecting the crossings along a line (rather than a point) in momentum space. Here we report experimental and theoretical evidence for Dirac nodal line crossings along the Brillouin zone boundaries in PtPb$_4$, arising from the nonsymmorphic symmetry of its crystal structure. Interestingly, while the nodal lines would remain gapless in the absence of spin-orbit coupling (SOC), the SOC in this case plays a detrimental role to topology by lifting the band degeneracy everywhere except at a set of isolated points. Nevertheless, the nodal line is observed to have a bandwidth much smaller than that found in density functional theory (DFT). Our findings reveal PtPb$_4$ to be a material system with narrow crossings approximately protected by non-symmorhpic crystalline symmetries.
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Submitted 25 March, 2022; v1 submitted 14 February, 2022;
originally announced February 2022.
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Correlation-Driven Electronic Reconstruction in FeTe$_{1-x}$Se$_x$
Authors:
Jianwei Huang,
Rong Yu,
Zhijun Xu,
Jian-Xin Zhu,
Ji Seop Oh,
Qianni Jiang,
Meng Wang,
Han Wu,
Tong Chen,
Jonathan D. Denlinger,
Sung-Kwan Mo,
Makoto Hashimoto,
Matteo Michiardi,
Tor M. Pedersen,
Sergey Gorovikov,
Sergey Zhdanovich,
Andrea Damascelli,
Genda Gu,
Pengcheng Dai,
Jiun-Haw Chu,
Donghui Lu,
Qimiao Si,
Robert J. Birgeneau,
Ming Yi
Abstract:
Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstructio…
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Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstruction of the Fermi surface tuned independently by two orthogonal axes of temperature and Se/Te ratio in the iron chalcogenide family FeTe$_{1-x}$Se$_x$. We demonstrate that this reconstruction is driven by the de-hybridization of a strongly renormalized $d_{xy}$ orbital with the remaining itinerant iron 3$d$ orbitals in the emergence of an orbital-selective Mott phase. Our observations are further supported by our theoretical calculations to be salient spectroscopic signatures of such a non-thermal evolution from a strongly correlated metallic phase into an orbital-selective Mott phase in $d_{xy}$ as Se concentration is reduced.
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Submitted 7 January, 2022;
originally announced January 2022.
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Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS$_{4}$
Authors:
Joolee Son,
Suhan Son,
Pyeongjae Park,
Maengsuk Kim,
Zui Tao,
Juhyun Oh,
Taehyeon Lee,
Sanghyun Lee,
Junghyun Kim,
Kaixuan Zhang,
Kwanghee Cho,
Takashi Kamiyama,
Jun Hee Lee,
Kin Fai Mak,
Jie Shan,
Miyoung Kim,
Je-Geun Park,
Jieun Lee
Abstract:
Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of materi…
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Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air stable and layer dependent ferromagnetic (FM) van der Waals crystal, CrPS$_{4}$, using magneto-optic Kerr effect microscopy. In contrast to the antiferromagnetic (AFM) bulk, the FM out-of-plane spin orientation is found in the monolayer crystal. Furthermore, alternating AFM and FM properties observed in even and odd layers suggest robust antiferromagnetic exchange interactions between layers. The observed ferromagnetism in these crystals remains resilient even after the air exposure of about a day, providing possibilities for the practical applications of van der Waals spintronics.
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Submitted 18 October, 2021;
originally announced October 2021.
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Transport anomalies in the layered compound BaPt4Se6
Authors:
Sheng Li,
Yichen Zhang,
Hanlin Wu,
Huifei Zhai,
Wenhao Liu,
Daniel Peirano Petit,
Ji Seop Oh,
Jonathan Denlinger,
Gregory T. McCandless,
Julia Y. Chan,
Robert J. Birgeneau,
Gang Li,
Ming Yi,
Bing Lv
Abstract:
We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenide Pt2Se3 layers sandwiched by Ba atoms. The Pt2Se3 layers in this compound can be derived from the Dirac-semimetal PtSe2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe6 octahedra and PtSe4 square net coordination configurations. Tempe…
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We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenide Pt2Se3 layers sandwiched by Ba atoms. The Pt2Se3 layers in this compound can be derived from the Dirac-semimetal PtSe2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe6 octahedra and PtSe4 square net coordination configurations. Temperature dependent electrical transport measurements suggest two distinct anomalies: a resistivity crossover, mimic to the metal-insulator (M-I) transition at ~150K, and a resistivity plateau at temperatures below 10K. The resistivity crossover is not associated with any structural, magnetic or charge order modulated phase transitions. Magnetoresistivity, Hall and heat capacity measurements concurrently suggest an existing hidden state below 5K in this system. Angle-resolved photoemission spectroscopy measurements reveal a metallic state and no dramatic reconstruction of the electronic structure up to 200K.
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Submitted 28 September, 2021;
originally announced September 2021.
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Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi$_4$I$_4$
Authors:
Jianwei Huang,
Sheng Li,
Chiho Yoon,
Ji Seop Oh,
Han Wu,
Xiaoyuan Liu,
Nikhil Dhale,
Yan-Feng Zhou,
Yucheng Guo,
Yichen Zhang,
Makoto Hashimoto,
Donghui Lu,
Jonathan Denlinger,
Xiqu Wang,
Chun Ning Lau,
Robert J. Birgeneau,
Fan Zhang,
Bing Lv,
Ming Yi
Abstract:
Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification, and ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In thi…
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Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification, and ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi$_4$I$_4$, mediated via a first order structural transition between two distinct stacking orders of the weakly-coupled chains. Using high resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high temperature $β$ phase to be the first weak topological insulator with gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low temperature $α$ phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics.
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Submitted 27 May, 2021;
originally announced May 2021.
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Coupled Valence Carrier and Core-Exciton Dynamics in WS$_{2}$ Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy
Authors:
Hung-Tzu Chang,
Alexander Guggenmos,
Christopher T. Chen,
Juwon Oh,
Romain Géneaux,
Yi-De Chuang,
Adam M. Schwartzberg,
Shaul Aloni,
Daniel M. Neumark,
Stephen R. Leone
Abstract:
Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$ at the W O$_3$ edge (37-45 eV) and carrier-induced modifications of core-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access to continuous core-to-conduction…
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Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$ at the W O$_3$ edge (37-45 eV) and carrier-induced modifications of core-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access to continuous core-to-conduction band absorption features and discrete core-exciton transitions in the same XUV spectral region in a semiconductor provides a novel means to investigate the effect of carrier excitation on core-exciton dynamics. The core-level transient absorption spectra, measured with either pulse arriving first to explore both core-level and valence carrier dynamics, reveal that core-exciton transitions are strongly influenced by the photoexcited carriers. A $1.2\pm0.3$ ps hole-phonon relaxation time and a $3.1\pm0.4$ ps carrier recombination time are extracted from the XUV transient absorption spectra from the core-to-conduction band transitions at the W O$_{3}$ edge. Global fitting of the transient absorption signal at the W N$_{6,7}$ edge yields $\sim 10$ fs coherence lifetimes of core-exciton states and reveals that the photoexcited carriers, which alter the electronic screening and band filling, are the dominant contributor to the spectral modifications of core-excitons and direct field-induced changes play a minor role. This work provides a first look at the modulations of core-exciton states by photoexcited carriers and advances our understanding of carrier dynamics in metal dichalcogenides.
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Submitted 4 August, 2021; v1 submitted 17 March, 2021;
originally announced March 2021.