Showing 1–45 of 45 results for author: Seo, A

Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films

Authors: Seung Gyo Jeong, In Hyeok Choi, Sreejith Nair, Luca Buiarelli, Bita Pourbahari, Jin Young Oh, Nabil Bassim, Ambrose Seo, Woo Seok Choi, Rafael M. Fernandes, Turan Birol, Liuyan Zhao, Jong Seok Lee, Bharat Jalan

Abstract: Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measu… ▽ More Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measurements, we establish a phase diagram in hybrid molecular beam epitaxy-grown RuO2/TiO2 (110) films, mapping the broken symmetries along the altermagnetic/electronic/structural phase transitions as functions of film thickness and temperature. This phase diagram features a novel altermagnetic metallic polar phase in strained 2 nm samples, extending the concept of multiferroics to altermagnetic systems. These results provide a comprehensive understanding of altermagnetism upon epitaxial heterostructure design for emergent novel phases with multifunctionalities. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 15 pages

Observation of the Surface Layer of Lithium Metal using In Situ Spectroscopy

Authors: Ambrose Seo, Andrew Meyer, Sujan Shrestha, Ming Wang, Xingcheng Xiao, Yang-Tse Cheng

Abstract: We have investigated the surface of lithium metal using x-ray photoemission spectroscopy and optical spectroscopic ellipsometry. Even if we prepare the surface of lithium metal rigorously by chemical cleaning and mechanical polishing inside a glovebox, both spectroscopic investigations show the existence of a few tens of nanometer-thick surface layers, consisting of lithium oxides and lithium carb… ▽ More We have investigated the surface of lithium metal using x-ray photoemission spectroscopy and optical spectroscopic ellipsometry. Even if we prepare the surface of lithium metal rigorously by chemical cleaning and mechanical polishing inside a glovebox, both spectroscopic investigations show the existence of a few tens of nanometer-thick surface layers, consisting of lithium oxides and lithium carbonates. When lithium metal is exposed to room air (~50% moisture), in situ real-time monitoring of optical spectra indicates that the surface layer grows at a rate of approximately 24 nm/min, presumably driven by an interface-controlled process. Our results hint that surface-layer-free lithium metals are formidable to achieve by a simple cleaning/polishing method, suggesting that the initial interface between lithium metal electrodes and solid-state electrolytes in fabricated lithium metal batteries can differ from an ideal lithium/electrolyte contact. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 120, 211602 (2022)

Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy

Authors: S. Shrestha, C. S. Chang, S. Lee, N. L. Kothalawala, D. Y. Kim, M. Minola, J. Kim, A. Seo

Abstract: Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samp… ▽ More Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 6 pages, 3 figures

Atomistic Engineering of Phonons in Functional Oxide Heterostructures

Authors: Seung Gyo Jeong, Ambrose Seo, Woo Seok Choi

Abstract: Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engi… ▽ More Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, we demonstrate artificial engineering of phonons in the atomic-scale SrRuO3/SrTiO3 superlattices, wherein tunable phonon modes were observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone-folded acoustic phonons in the THz frequency domain. We could further fine-tune the frequencies from 1 to 2 THz via atomic-scale precision thickness control. In addition, we observed a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices, exhibiting emergent functionality. Our approach of atomic-scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 23 pages

Journal ref: published in 2022

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Authors: Seung Gyo Jeong, Jiwoong Kim, Ambrose Seo, Sungkyun Park, Hu Young Jeong, Young-Min Kim, Valeria Lauter, Takeshi Egam, Jung Hoon Han, Woo Seok Choi

Abstract: Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) he… ▽ More Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 40 pages

Journal ref: published in 2022

Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4

Authors: S. Shrestha, M. Krautloher, M. Zhu, J. Kim, J. Hwang, J. Kim, J. -W. Kim, B. Keimer, A. Seo

Abstract: We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant… ▽ More We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: 5 pages, 4 figures

Compressive-strain induced enhancement of exchange interactions and short-range magnetic order in Sr$_2$IrO$_4$ investigated by Raman spectroscopy

Authors: A. Seo, P. P. Stavropoulos, H. -H. Kim, K. Fürsich, M. Souri, J. G. Connell, H. Gretarsson, M. Minola, H. Y. Kee, B. Keimer

Abstract: We have carried out Raman spectroscopy experiments to investigate two-magnon excitations in epitaxial thin films of the quasi-two-dimensional antiferromagnetic Mott insulator Sr$_2$IrO$_4$ under in-plane misfit strain. With in-plane biaxial compression, the energy of the two-magnon peak increases, and the peak remains observable over a wider temperature range above the Néel temperature, indicating… ▽ More We have carried out Raman spectroscopy experiments to investigate two-magnon excitations in epitaxial thin films of the quasi-two-dimensional antiferromagnetic Mott insulator Sr$_2$IrO$_4$ under in-plane misfit strain. With in-plane biaxial compression, the energy of the two-magnon peak increases, and the peak remains observable over a wider temperature range above the Néel temperature, indicating strain-induced enhancement of the superexchange interactions between $\it{J}_{eff}$ = 1/2 pseudospins. From density functional theory calculations, we have found an increase of the nearest-neighbor hopping parameter and exchange interaction with increasing biaxial compressive strain, in agreement with the experimental observations. Our experimental and theoretical results provide perspectives for systematic, theory-guided strain control of the primary exchange interactions in 5$\it{d}$ transition metal oxides. △ Less

Submitted 7 August, 2019; originally announced August 2019.

Comments: 3 figures

Journal ref: Phys. Rev. B 100, 165106 (2019)

Optical Characteristics of Charge Carrier Transfer across Interfaces between YBa$_2$Cu$_3$O$_{6+δ}$ and La$_{0.7}$Ca$_{0.3}$MnO$_3$

Authors: A. Seo, A. V. Boris, G. Cristiani, H. -U. Habermeier, B. Keimer

Abstract: We report a spectral ellipsometry study of multilayers composed of superconducting YBa$_2$Cu$_3$O$_{6+δ}$ (YBCO) and ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_3$ in the spectral range of 0.7 - 6.5 eV. With increasing YBCO sublayer thickness, the optical spectral weight is enhanced at photon energies of 1.5 - 3.5 eV. The spectral weight enhancement is proportional to the number of interfaces of each m… ▽ More We report a spectral ellipsometry study of multilayers composed of superconducting YBa$_2$Cu$_3$O$_{6+δ}$ (YBCO) and ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_3$ in the spectral range of 0.7 - 6.5 eV. With increasing YBCO sublayer thickness, the optical spectral weight is enhanced at photon energies of 1.5 - 3.5 eV. The spectral weight enhancement is proportional to the number of interfaces of each multilayer sample, indicating its association with the interfacial electronic structure. Based on calculations in the framework of a multilayer model, we find that the shape of the interface-induced spectral weight is consistent with transfer of hole-carriers from YBCO to LCMO. Our results imply that the holes that are transferred across the interfaces accumulate in the LCMO layers, rather than being pinned by interfacial defects or annihilated by electron donors such as oxygen vacancies. Optical spectroscopy can thus serve as a non-destructive probe of charge transfer across buried interfaces in metal-oxide heterostructures. △ Less

Submitted 23 January, 2019; originally announced January 2019.

Comments: 5 pages, 5 figures

Unconventional anomalous Hall effect from antiferromagnetic domain walls of Nd2Ir2O7 thin films

Authors: Woo Jin Kim, John H. Gruenewald, Taekoo Oh, Sangmo Cheon, Bongju Kim, Oleksandr B. Korneta, Hwanbeom Cho, Daesu Lee, Yoonkoo Kim, Miyoung Kim, Je-Geun Park, Bohm-Jung Yang, Ambrose Seo, Tae Won Noh

Abstract: Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs… ▽ More Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a non-coplanar AFM, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the two-fold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our study highlights the symmetry broken interface of AFM materials as a new means of exploring topological effects and their relevant applications. △ Less

Submitted 6 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. B 98, 125103 (2018)

Electronic and optical properties of La-doped Sr$_3$Ir$_2$O$_7$ epitaxial thin-films

Authors: M. Souri, J. Terzic, J. M. Johnson, J. G. Connell, J. H. Gruenewald, J. Thompson, J. W. Brill, J. Hwang, G. Cao, A. Seo

Abstract: We have investigated structural, transport, and optical properties of tensile strained (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ (x = 0, 0.025, 0.05) epitaxial thin-films. While High-T$_c$ superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross… ▽ More We have investigated structural, transport, and optical properties of tensile strained (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ (x = 0, 0.025, 0.05) epitaxial thin-films. While High-T$_c$ superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr$_3$Ir$_2$O$_7$ thin-films is presumably due to disorder-induced localization and ineffective electron-doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates. △ Less

Submitted 8 February, 2018; originally announced February 2018.

Comments: 4 figures

Journal ref: Phys. Rev. Materials 2, 024803 (2018)

Stretching Epitaxial La0.6Sr0.4CoO3-δ for Fast Oxygen Reduction

Authors: Dongkyu Lee, Ryan Jacobs, Youngseok Jee, S. S. Ambrose Seo, Changhee Sohn, Anton V. Ievlev, Olga S. Ovchinnikova, Kevin Huang, Dane Morgan, Ho Nyung Lee

Abstract: The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in developing high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study… ▽ More The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in developing high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study in various materials has been a challenge. Here, we explore the strain modulation of the ORR kinetics by growing epitaxial La0.6Sr0.4CoO3-δ (LSCO) films on yttria-stabilized zirconia substrates with the film thickness below and above the critical thickness for strain relaxation. Two orders of magnitude higher ORR kinetics is achieved in an ultra-thin film with ~0.8% tensile strain as compared to unstrained films. Time-of-flight secondary ion mass spectrometry depth profiling confirms that the Sr surface segregation is not responsible for the enhanced ORR in strained films. We attribute this enhancement of ORR kinetics to the increase in oxygen vacancy concentration in the tensile-strained LSCO film owing to the reduced activation barrier for oxygen surface exchange kinetics. Density functional theory calculations reveal an upshift of the oxygen 2p-band center relative to the Fermi level by tensile strain, indicating the origin of the enhanced ORR kinetics. △ Less

Submitted 15 December, 2017; originally announced December 2017.

Optical Signatures of Spin-Orbit Exciton in Bandwidth Controlled Sr$_2$IrO$_4$ Epitaxial Films via High-Concentration Ca and Ba Doping

Authors: M. Souri, B. H. Kim, J. H. Gruenewald, J. G. Connell, J. Thompson, J. Nichols, J. Terzic, B. I. Min, G. Cao, J. W. Brill, A. Seo

Abstract: We have investigated the electronic and optical properties of (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ (x= 0 - 0.375) and (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$ (y= 0 - 0.375) epitaxial thin-films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the J$_{eff}$= 1/2 spi… ▽ More We have investigated the electronic and optical properties of (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ (x= 0 - 0.375) and (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$ (y= 0 - 0.375) epitaxial thin-films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the J$_{eff}$= 1/2 spin-orbit Mott insulator Sr$_2$IrO$_4$. As the average A-site ionic radius increases from (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ to (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$, optical conductivity spectra in the near-infrared region shift to lower energies, which cannot be explained by the simple picture of well-separated J$_{eff}$= 1/2 and J$_{eff}$= 3/2 bands. We suggest that the two-peak-like optical conductivity spectra of the layered iridates originates from the overlap between the optically-forbidden spin-orbit exciton and the inter-site optical transitions within the J$_{eff}$= 1/2 band. Our experimental results are consistent with this interpretation as implemented by a multi-orbital Hubbard model calculation: namely, incorporating a strong Fano-like coupling between the spin-orbit exciton and inter-site d-d transitions within the J$_{eff}$= 1/2 band. △ Less

Submitted 12 June, 2017; originally announced June 2017.

Comments: 5 figures

Journal ref: Phys. Rev. B 95, 235125 (2017)

Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials

Authors: J. H. Gruenewald, J. Kim, H. S. Kim, J. M. Johnson, J. Hwang, M. Souri, J. Terzic, S. H. Chang, A. Said, J. W. Brill, G. Cao, H. -Y. Kee, S. S. A. Seo

Abstract: One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mot… ▽ More One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mott insulator Sr2IrO4 and a wide bandgap insulator LaSrGaO4, both of which are crystals with layered structure. In addition to the successful formation of 1D Ir-stripe structure, we have observed 1D quantum-confined electronic states from optical spectroscopy and resonant inelastic x-ray scattering. Since this 1D superlattice approach can be applied to a wide range of layered materials, it opens a new era of 1D science. △ Less

Submitted 24 October, 2016; originally announced October 2016.

Comments: 4 figures

Journal ref: Advanced Materials 29, 163798 (2017)

Selective growth of epitaxial Sr2IrO4 by controlling plume dimensions in pulsed laser deposition

Authors: S. S. A. Seo, J. Nichols, J. Hwang, J. Terzic, J. H. Gruenewald, M. Souri, J. Thompson, J. G. Connell, G. Cao

Abstract: We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Sr_{n+1}Ir_{n}O_{3n+1}), conventional PLD methods often result in mixed phases of Sr2IrO4 (n = 1), Sr3Ir2O7 (n = 2), and SrIrO3 (n = infinity). We have discovered that reduced PLD plume dimensions and slow depos… ▽ More We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Sr_{n+1}Ir_{n}O_{3n+1}), conventional PLD methods often result in mixed phases of Sr2IrO4 (n = 1), Sr3Ir2O7 (n = 2), and SrIrO3 (n = infinity). We have discovered that reduced PLD plume dimensions and slow deposition rates are the key for stabilizing pure Sr2IrO4 phase thin-films, identified by real-time in-situ monitoring of their optical spectra. The slow film deposition results in a thermodynamically stable TiO2\\SrO\IrO2\SrO\SrO configuration at an interface rather than TiO2\\SrO\SrO\IrO2\SrO between a TiO2-teminated SrTiO3 substrate and a Sr2IrO4 thin film, which is consistent with other layered oxides grown by molecular beam epitaxy. Our approach provides an effective method for using PLD to achieve pure phase thin-films of layered materials that are susceptible to several energetically competing phases. △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. 109, 201901 (2016)

Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy

Authors: J. Thompson, J. Nichols, S. Lee, S. Ryee, J. H. Gruenewald, J. G. Connell, M. Souri, J. M. Johnson, J. Hwang, M. J. Han, H. N. Lee, D. -W. Kim, S. S. A. Seo

Abstract: Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joul… ▽ More Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T_C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way for improved device applications. △ Less

Submitted 20 October, 2016; originally announced October 2016.

Comments: 8 pages, 4 figures, 1 table

Journal ref: Appl. Phys. Lett. 109, 161902 (2016)

Investigations of metastable Ca2IrO4 epitaxial thin-films: systematic comparison with Sr2IrO4 and Ba2IrO4

Authors: M. Souri, J. H. Gruenewald, J. Terzic, J. W. Brill, G. Cao, S. S. A. Seo

Abstract: We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, wit… ▽ More We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, with the exception of an increased gap energy. The gap increase is to be expected in Ca2IrO4 due to its increased octahedral rotation and tilting, which results in enhanced electron-correlation, U/W. Our results suggest that the epitaxial stabilization growth of metastable-phase thin-films can be used effectively for investigating layered iridates and various complex-oxide systems. △ Less

Submitted 19 May, 2016; originally announced May 2016.

Comments: 10 pages, 3 figures

Journal ref: Scientific Reports 6, 25967 (2016)

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

Authors: J. G. Connell, J. Nichols, J. H. Gruenewald, D. -W. Kim, S. S. A. Seo

Abstract: We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BH… ▽ More We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns. △ Less

Submitted 1 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 6, 23621 (2016)

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

Authors: Ho Nyung Lee, Sung S. Ambrose Seo, Woo Seok Choi, Christopher M. Rouleau

Abstract: In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a cha… ▽ More In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects, even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well. △ Less

Submitted 11 February, 2016; originally announced February 2016.

Journal ref: Scientific Reports 6, 19941 (2016)

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films

Authors: D. J. Kim, J. G. Connell, S. S. A. Seo, A. Gruverman

Abstract: Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric… ▽ More Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO$_3$ films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes model tuned by the segregation of defects. △ Less

Submitted 17 July, 2015; originally announced July 2015.

Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films

Authors: J. H. Gruenewald, J. Nichols, J. Terzic, G. Cao, J. W. Brill, S. S. A. Seo

Abstract: We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and th… ▽ More We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and the d\r{ho}/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively-strained thin films. Transport measurements under magnetic fields show negative magneto-resistance at low temperature for compressively-strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films. △ Less

Submitted 25 June, 2014; originally announced June 2014.

Comments: 5 figurs

Journal ref: J. Mater. Res. 29, 2491 (2014)

Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

Authors: J. Nichols, O. B. Korneta, J. Terzic, G. Cao, J. W. Brill, S. S. A. Seo

Abstract: We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2Ir… ▽ More We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 104, 121913 (2014)

Alleviating polarity-conflict at the heterointerfaces of KTaO$_3$/GdScO$_3$ polar complex-oxides

Authors: J. Thompson, J. Hwang, J. Nichols, J. G. Connell, S. Stemmer, S. S. A. Seo

Abstract: We have synthesized and investigated the heterointerfaces of KTaO$_3$ (KTO) and GdScO$_3$ (GSO), which are both polar complex-oxides along the pseudo-cubic [001] direction. Since their layers have the same, conflicting net charges at interfaces, i.e. KO(-1)/ScO$_2$(-1) or TaO$_2$(+1)/GdO(+1), forming the heterointerface of KTO/GSO should be forbidden due to strong Coulomb repulsion, the so-called… ▽ More We have synthesized and investigated the heterointerfaces of KTaO$_3$ (KTO) and GdScO$_3$ (GSO), which are both polar complex-oxides along the pseudo-cubic [001] direction. Since their layers have the same, conflicting net charges at interfaces, i.e. KO(-1)/ScO$_2$(-1) or TaO$_2$(+1)/GdO(+1), forming the heterointerface of KTO/GSO should be forbidden due to strong Coulomb repulsion, the so-called $\textit{polarity conflict}$. However, we have discovered that atomic reconstruction occurs at the heterointerfaces between KTO thin-films and GSO substrates, which effectively alleviates the polarity conflict without destroying the hetero-epitaxy. Our result demonstrates one of the important ways to create artificial heterostructures from polar complex-oxides. △ Less

Submitted 9 September, 2014; v1 submitted 31 January, 2014; originally announced January 2014.

Comments: 5 figures

Journal ref: Appl. Phys. Lett. 105, 102901 (2014)

Tuning Magnetic Coupling in Sr$_2$IrO$_4$ Thin Films with Epitaxial Strain

Authors: A. Lupascu, J. P. Clancy, H. Gretarsson, Zixin Nie, J. Nichols, J. Terzic, G. Cao, S. S. A. Seo, Z. Islam, M. H. Upton, Jungho Kim, A. H. Said, D. Casa, T. Gog, Vamshi M. Katukuri, H. Stoll, L. Hozoi, J. van den Brink, Young-June Kim

Abstract: We report x-ray resonant magnetic scattering (XRMS) and resonant inelastic x-ray scattering (RIXS) studies of epitaxially-strained $\mathrm{Sr_2IrO_4}$ thin films. The films were grown on $\mathrm{SrTiO_3}$ and $\mathrm{(LaAlO_3)_{0.3}(Sr_2AlTaO_6)_{0.7}}$ substrates, under slight tensile and compressive strains, respectively. Although the films develop a magnetic structure reminiscent of bulk… ▽ More We report x-ray resonant magnetic scattering (XRMS) and resonant inelastic x-ray scattering (RIXS) studies of epitaxially-strained $\mathrm{Sr_2IrO_4}$ thin films. The films were grown on $\mathrm{SrTiO_3}$ and $\mathrm{(LaAlO_3)_{0.3}(Sr_2AlTaO_6)_{0.7}}$ substrates, under slight tensile and compressive strains, respectively. Although the films develop a magnetic structure reminiscent of bulk $\mathrm{Sr_2IrO_4}$, the magnetic correlations are extremely anisotropic, with in-plane correlation lengths significantly longer than the out-of-plane correlation lengths. In addition, the compressive (tensile) strain serves to suppress (enhance) the magnetic ordering temperature $\mathrm{T_N}$, while raising (lowering) the energy of the zone boundary magnon. Quantum chemical calculations show that the tuning of magnetic energy scales can be understood in terms of strain-induced change in bond lengths. △ Less

Submitted 18 April, 2014; v1 submitted 14 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 112, 147201 (2014)

Anisotropic electronic properties of a-axis-oriented Sr2IrO4 epitaxial thin-films

Authors: J. Nichols, O. B. Korneta, J. Terzic, L. E. De Long, G. Cao, J. W. Brill, S. S. A. Seo

Abstract: We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E… ▽ More We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E//c spectra show only the latter. The structural anisotropy created by biaxial strain in a-axis-oriented thin-films also changes the electronic structure and gap energy. These a-axis-oriented, epitaxial thin-films provide a powerful tool to investigate the highly anisotropic electronic properties of Sr2IrO4. △ Less

Submitted 6 September, 2013; v1 submitted 19 August, 2013; originally announced August 2013.

Comments: 4 figures, 1 table

Journal ref: Appl. Phys. Lett. 103, 131910 (2013)

Reversal of the lattice structure in SrCoOx epitaxial thin films studied by real-time optical spectroscopy and first-principles calculations

Authors: Woo Seok Choi, Hyoungjeen Jeen, Jun Hee Lee, S. S. Ambrose Seo, Valentino R. Cooper, Karin M. Rabe, Ho Nyung Lee

Abstract: Using real-time spectroscopic ellipsometry, we directly observed a reversible lattice and electronic structure evolution in SrCoOx (x = 2.5 - 3) epitaxial thin films. Drastically different electronic ground states, which are extremely susceptible to the oxygen content x, are found in the two topotactic phases, i.e. the brownmillerite SrCoO2.5 and the perovskite SrCoO3. First principles calculation… ▽ More Using real-time spectroscopic ellipsometry, we directly observed a reversible lattice and electronic structure evolution in SrCoOx (x = 2.5 - 3) epitaxial thin films. Drastically different electronic ground states, which are extremely susceptible to the oxygen content x, are found in the two topotactic phases, i.e. the brownmillerite SrCoO2.5 and the perovskite SrCoO3. First principles calculations confirmed substantial differences in the electronic structure, including a metal-insulator transition, which originates from the modification in the Co valence states and crystallographic structures. More interestingly, the two phases can be reversibly controlled by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. △ Less

Submitted 10 August, 2013; originally announced August 2013.

Comments: 18 pages, 5 figures, to be published in Phys. Rev. Lett

Journal ref: Phys Rev. Lett. 111, 097401 (2013)

Pulsed laser deposition with simultaneous in situ real-time monitoring of optical spectroscopic ellipsometry and reflection high-energy electron diffraction

Authors: J. H. Gruenewald, J. Nichols, S. S. A. Seo

Abstract: We present a pulsed laser deposition (PLD) system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). The RHEED precisely monitors the number of thin-film layers and surface structure during the deposition and the SE measures the optical spectra of the samples simultaneously. The thin-film thicknes… ▽ More We present a pulsed laser deposition (PLD) system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). The RHEED precisely monitors the number of thin-film layers and surface structure during the deposition and the SE measures the optical spectra of the samples simultaneously. The thin-film thickness information obtained from RHEED facilitates the SE modeling process, which allows extracting the in situ optical spectra, i.e. the dielectric functions, of thin-films during growth. The in situ dielectric functions contain indispensable information about the electronic structure of thin-films. We demonstrate the performance of this system by growing LaMnO3+δ (LMO) thin-films on SrTiO3 (001) substrates. By using in situ SE and RHEED simultaneously, we show that real-time thickness and dielectric functions of the LMO thin-films can be effectively extracted. The simultaneous monitoring of both optical SE and RHEED offers important clues to understand the growth mechanism of atomic-scale thin-films. △ Less

Submitted 16 March, 2013; v1 submitted 20 February, 2013; originally announced February 2013.

Comments: 18 pages, 5 figures

Journal ref: Rev. Sci. Instrum. 84, 043902 (2013)

Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

Authors: J. Nichols, J. Terzic, E. G. Bittle, O. B. Korneta, L. E. De Long, J. W. Brill, G. Cao, S. S. A. Seo

Abstract: We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to hig… ▽ More We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation. △ Less

Submitted 30 March, 2013; v1 submitted 4 February, 2013; originally announced February 2013.

Comments: 9 pages, 5 figures, 1 table

Journal ref: Appl. Phys. Lett. 102, 141908 (2013)

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Authors: Woo Seok Choi, Christopher M. Rouleau, Sung Seok A. Seo, Zhenlin Luo, Hua Zhou, Timothy T. Fister, Jeffrey A. Eastman, Paul H. Fuoss, Dillon D. Fong, Jonathan Z. Tischler, Gyula Eres, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most impo… ▽ More Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces. △ Less

Submitted 6 October, 2012; originally announced October 2012.

Comments: 25 pages

Journal ref: Adv. Mater. 24, 6423-6428 (2012)

Preparation of atomically-flat SrTiO3 surfaces using a deionized-water etching and thermal annealing procedure

Authors: J. G. Connell, B. J. Isaac, D. R. Strachan, S. S. A. Seo

Abstract: We report that a deionized water etching and thermal annealing technique can be effective for preparing atomically-flat and singly-terminated surfaces of single crystalline SrTiO3 substrates. After a two-step thermal-annealing and deionized-water etching procedure, topography measured by atomic force microscopy shows the evolution of substrates from a rough to step-terraced surface structure. Late… ▽ More We report that a deionized water etching and thermal annealing technique can be effective for preparing atomically-flat and singly-terminated surfaces of single crystalline SrTiO3 substrates. After a two-step thermal-annealing and deionized-water etching procedure, topography measured by atomic force microscopy shows the evolution of substrates from a rough to step-terraced surface structure. Lateral force microscopy confirms that the atomically-flat surfaces are singly-terminated. Moreover, this technique can be used to remove excessive strontium oxide or hydroxide composites segregated on the SrTiO3 surface. This acid-etchant-free technique facilitates the preparation of atomically-aligned SrTiO3 substrates, which promotes studies on two-dimensional physics of complex oxide interfaces. △ Less

Submitted 5 October, 2012; originally announced October 2012.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 101, 251607 (2012)

Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices

Authors: Woo Seok Choi, D. W. Jeong, S. S. A. Seo, Y. S. Lee, T. H. Kim, S. Y. Jang, H. N. Lee, K. Myung-Whun

Abstract: We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of… ▽ More We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect. △ Less

Submitted 2 March, 2011; originally announced March 2011.

Comments: 17 pages including 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 83, 195113 (2011)

Electronic structure and anomalous band-edge absorption feature in multiferroic MnWO4: An optical spectroscopic study

Authors: Woo Seok Choi, K. Taniguchi, S. J. Moon, S. S. A. Seo, T. Arima, H. Hoang, I. -S. Yang, T. W. Noh, Y. S. Lee

Abstract: We investigated the electronic structure and lattice dynamics of multiferroic MnWO4 by optical spectroscopy. With variation of polarization, temperature, and magnetic field, we obtained optical responses over a wide range of photon energies. The electronic structure of MnWO4 near to the Fermi level was examined, with inter-band transitions identified in optical conductivity spectra above a band-ga… ▽ More We investigated the electronic structure and lattice dynamics of multiferroic MnWO4 by optical spectroscopy. With variation of polarization, temperature, and magnetic field, we obtained optical responses over a wide range of photon energies. The electronic structure of MnWO4 near to the Fermi level was examined, with inter-band transitions identified in optical conductivity spectra above a band-gap of 2.5 eV. As for the lattice dynamics, we identified all the infrared transverse optical phonon modes available according to the group-theory analysis. Although we did not observe much change in global electronic structure across the phase transition temperatures, an optical absorption at around 2.2 eV showed an evident change depending upon the spin configuration and magnetic field. The behavior of this band-edge absorption indicates that spin-orbit coupling plays an important role in multiferroic MnWO4. △ Less

Submitted 24 April, 2010; originally announced April 2010.

Comments: Accepted for publication in Physical Review B. 19 pages including 6 figures

Journal ref: Phys. Rev. B 81, 205111 (2010)

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

Authors: J. S. Kim, S. S. A. Seo, M. F. Chisholm, R. K. Kremer, H. -U. Habermeier, B. Keimer, H. N. Lee

Abstract: We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduc… ▽ More We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO3 at low temperatures, and its electric-field dependence reflects the spatial distribution of the quasi-two-dimensional electron gas. △ Less

Submitted 5 April, 2010; originally announced April 2010.

Comments: 23 pages, 4 figures in the main text, 6 figures in the Supplementary Information

Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers

Authors: S. S. A. Seo, M. J. Han, G. W. J. Hassink, W. S. Choi, S. J. Moon, J. S. Kim, T. Susaki, Y. S. Lee, J. Yu, C. Bernhard, H. Y. Hwang, G. Rijnders, D. H. A. Blank, B. Keimer, T. W. Noh

Abstract: We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti ions. In combination with LDA+U calculations, we suggest that 2D confinement in the TiO2 slabs lift… ▽ More We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti ions. In combination with LDA+U calculations, we suggest that 2D confinement in the TiO2 slabs lifts the degeneracy of the t_{2g} states leaving only the planar d_xy orbitals occupied. We outline that these multilayers can serve as a model system for the study of the t_{2g} 2D Hubbard model. △ Less

Submitted 21 December, 2009; originally announced December 2009.

Comments: 7 pages, 4 figures. Accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 104, 036401 (2010)

Optical spectroscopic investigation on the temperature-dependent electronic structure evolution of the Jeff,1/2 Mott insulator Sr2IrO4

Authors: S. J. Moon, Hosub Jin, W. S. Choi, J. S. Lee, S. S. A. Seo, J. Yu, G. Cao, T. W. Noh, Y. S. Lee

Abstract: We investigated the temperature-dependent evolution of the electronic structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy. The optical conductivity spectra $σ(ω)$ of this compound has recently been found to exhibit two d-d transitions associated with the transition between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron correlation and spin-orbit co… ▽ More We investigated the temperature-dependent evolution of the electronic structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy. The optical conductivity spectra $σ(ω)$ of this compound has recently been found to exhibit two d-d transitions associated with the transition between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron correlation and spin-orbit coupling. As the temperature increases, the two peaks show significant changes resulting in a decrease in the Mott gap. The experimental observations are compared with the results of first-principles calculation in consideration of increasing bandwidth. We discuss the effect of the temperature change on the electronic structure of Sr2IrO4 in terms of local lattice distortion, excitonic effect, electron-phonon coupling, and magnetic ordering. △ Less

Submitted 22 October, 2009; originally announced October 2009.

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

Authors: S. S. A. Seo, Z. Marton, W. S. Choi, G. W. J. Hassink, D. H. A. Blank, H. Y. Hwang, T. W. Noh, T. Egami, H. N. Lee

Abstract: We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transpo… ▽ More We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers. △ Less

Submitted 10 August, 2009; originally announced August 2009.

Comments: 3 figures, supplemental material

Journal ref: Appl. Phys. Lett. 95, 082107 (2009)

Effects of oxygen-reducing atmosphere annealing on LaMnO$_3$ epitaxial thin films

Authors: W S Choi, Z Marton, S Y Jang, S J Moon, B C Jeon, J H Shin, S S A Seo, T W Noh, K Myung-Whun, H N Lee, Y S Lee

Abstract: We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the a… ▽ More We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the antiferromagnetic and insulating phases of bulk-like stoichiometric LaMnO$_3$. We show that non-destructive optical spectroscopy at room temperature is one of the most convenient tools for identifying the phases of LaMnO$_3$ films. Our results serve as a prerequisite in studying LaMnO$_3$ based heterostructures grown by pulsed laser deposition. △ Less

Submitted 13 July, 2009; originally announced July 2009.

Comments: 10 pages including 3 figures, accepted in J. Phys. D: Appl. Phys

Journal ref: Journal of Physics D: Applied Physics Volume 42, Number 16, 165401 (2009)

Strain-coupled ferroelectric polarization in BaTiO3-CaTiO3 superlattices

Authors: Sung Seok A. Seo, Ho Nyung Lee

Abstract: We report on growth and ferroelectric (FE) properties of superlattices (SLs) composed of the FE BaTiO3 and the paraelectric (PE) CaTiO3. Previous theories have predicted that the polarization in (BaTiO3)n/(CaTiO3)n SLs increases as the sublayer thickness (n) increases when the same strain state is maintained. However, our BaTiO3/CaTiO3 SLs show a varying lattice-strain state and systematic reduc… ▽ More We report on growth and ferroelectric (FE) properties of superlattices (SLs) composed of the FE BaTiO3 and the paraelectric (PE) CaTiO3. Previous theories have predicted that the polarization in (BaTiO3)n/(CaTiO3)n SLs increases as the sublayer thickness (n) increases when the same strain state is maintained. However, our BaTiO3/CaTiO3 SLs show a varying lattice-strain state and systematic reduction in polarization with increasing n while coherently-strained SLs with n=1, 2 show a FE polarization of ca. 8.5 uC/cm^2. We suggest that the strain coupling plays more important role in FE properties than the electrostatic interlayer coupling based on constant dielectric permittivities. △ Less

Submitted 14 May, 2009; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 7 pages, 4 figures

Journal ref: Appl. Phys. Lett. 94, 232904 (2009)

Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films

Authors: Woo Seok Choi, Soon Jae Moon, Sung Seok A. Seo, Daesu Lee, Jung Hyuk Lee, Pattukkannu Murugavel, Tae Won Noh, Yun Sang Lee

Abstract: We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic change in the electronic structure was commonly identified in this series. The optical absorption peak near 1.7 eV showed an unexpectedly large shift of more… ▽ More We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic change in the electronic structure was commonly identified in this series. The optical absorption peak near 1.7 eV showed an unexpectedly large shift of more than 150 meV from 300 K to 15 K, accompanied by an anomaly of the shift at the Neel temperature. The magnetic field dependent measurement clearly revealed a sizable shift of the corresponding peak when a high magnetic field was applied. Our findings indicated strong coupling between the magnetic ordering and the electronic structure in the multiferroic hexagonal RMnO3 compounds. △ Less

Submitted 14 July, 2008; originally announced July 2008.

Comments: 16 pages including 4 figures

Journal ref: Phys. Rev. B 78, 054440 (2008)

Signatures of Electronic Correlations in Optical Properties of LaFeAsO$_{1-x}$F$_x$

Authors: A. V. Boris, N. N. Kovaleva, S. S. A. Seo, J. S. Kim, P. Popovich, Y. Matiks, R. K. Kremer, B. Keimer

Abstract: Spectroscopic ellipsometry is used to determine the dielectric function of the superconducting LaFeAsO$_{0.9}$F$_{0.1}$ ($T_c$ = 27 K) and undoped LaFeAsO polycrystalline samples in the wide range 0.01-6.5 eV at temperatures 10 $\leq T \leq$ 350 K. The free charge carrier response in both samples is heavily damped with the effective carrier density as low as 0.040$\pm$0.005 electrons per unit ce… ▽ More Spectroscopic ellipsometry is used to determine the dielectric function of the superconducting LaFeAsO$_{0.9}$F$_{0.1}$ ($T_c$ = 27 K) and undoped LaFeAsO polycrystalline samples in the wide range 0.01-6.5 eV at temperatures 10 $\leq T \leq$ 350 K. The free charge carrier response in both samples is heavily damped with the effective carrier density as low as 0.040$\pm$0.005 electrons per unit cell. The spectral weight transfer in the undoped LaFeAsO associated with opening of the pseudogap at about 0.65 eV is restricted at energies below 2 eV. The spectra of superconducting LaFeAsO$_{0.9}$F$_{0.1}$ reveal a significant transfer of the spectral weight to a broad optical band above 4 eV with increasing temperature. Our data may imply that the electronic states near the Fermi surface are strongly renormalized due to electron-phonon and/or electron-electron interactions. △ Less

Submitted 12 June, 2008; v1 submitted 10 June, 2008; originally announced June 2008.

Comments: 4 pages, 4 figures, units in Fig.2 added

Ferroelectricity in artificial bicolor oxide superlattices

Authors: Sung Seok A. Seo, Jun Hee Lee, Ho Nyung Lee, Matthew F. Chisholm, Woo Seok Choi, Dong Jik Kim, Ji Young Jo, Hanchul Kim, Jaejun Yu, Tae Won Noh

Abstract: We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly… ▽ More We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly increased as compared to pseudo-binary ceramics with the same overall composition. Such strong enhancement in superlattice is attributed to newly-developed ionic motions of A-site cations at the hetero-interfaces due to the interfacial coupling of electrostatic and elastic interactions, which cannot be found in single phase materials. △ Less

Submitted 12 September, 2007; originally announced September 2007.

Comments: 15 pages, 4 figures

Journal ref: Advanced Materials 19, 2460 (2007)

Electronic structures of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films

Authors: W. S. Choi, D. G. Kim, S. S. A. Seo, S. J. Moon, D. Lee, J. H. Lee, H. S. Lee, D. -Y. Cho, Y. S. Lee, P. Murugavel, Jaejun Yu, T. W. Noh

Abstract: We investigated the electronic structure of multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using both optical spectroscopy and first-principles calculations. Using artificially stabilized hexagonal RMnO3, we extended the optical spectroscopic studies on the hexagonal multiferroic manganite system. We observed two optical transitions located near 1.7 eV and 2.3 eV, in addition t… ▽ More We investigated the electronic structure of multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using both optical spectroscopy and first-principles calculations. Using artificially stabilized hexagonal RMnO3, we extended the optical spectroscopic studies on the hexagonal multiferroic manganite system. We observed two optical transitions located near 1.7 eV and 2.3 eV, in addition to the predominant absorption above 5 eV. With the help of first-principles calculations, we attribute the low-lying optical absorption peaks to inter-site transitions from the oxygen states hybridized strongly with different Mn orbital symmetries to the Mn 3d3z2-r2 state. As the ionic radius of the rare earth ion increased, the lowest peak showed a systematic increase in its peak position. We explained this systematic change in terms of a flattening of the MnO5 triangular bipyramid. △ Less

Submitted 17 August, 2007; originally announced August 2007.

Journal ref: Phys. Rev. B 77, 045137 (2008)

Optical Study of the Free Carrier Response of LaTiO3/SrTiO3 Superlattices

Authors: S. S. A. Seo, W. S. Choi, H. N. Lee, L. Yu, K. W. Kim, C. Bernhard, T. W. Noh

Abstract: We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO3/SrTiO3 superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer-thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface ~3x10^14 cm^-2. This is probably due to the leakage of d-electrons at interfaces from the Mott i… ▽ More We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO3/SrTiO3 superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer-thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface ~3x10^14 cm^-2. This is probably due to the leakage of d-electrons at interfaces from the Mott insulator LaTiO3 to the band insulator SrTiO3. We observed a carrier relaxation time ~ 35 fs and mobility ~ 35 cm^2V^-1s^-1 at 10 K, and an unusual temperature dependence of carrier density that was attributed to the dielectric screening of quantum paraelectric SrTiO3. △ Less

Submitted 7 January, 2008; v1 submitted 15 March, 2007; originally announced March 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 99, 266801 (2007)

Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films

Authors: S. C. Chae, Y. J. Chang, S. S. A. Seo, T. W. Noh, D. -W. Kim, C. U. Jung

Abstract: High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic… ▽ More High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001]. △ Less

Submitted 23 September, 2006; originally announced September 2006.

Comments: 14 pages, 4 figures

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

Authors: W. S. Choi, S. S. A. Seo, K. W. Kim, T. W. Noh, M. Y. Kim, S. Shin

Abstract: We investigated the dielectric functions $ε$($ω$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $ε^{b}$($ω$), since these are important scientifically as well as technologically: the $ε_1^{b}$(0) of a metal electrode is one of the major factors determining the depolari… ▽ More We investigated the dielectric functions $ε$($ω$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $ε^{b}$($ω$), since these are important scientifically as well as technologically: the $ε_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $ε_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $ε_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $ε_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $ε_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications. △ Less

Submitted 21 November, 2006; v1 submitted 3 July, 2006; originally announced July 2006.

Comments: 26 pages, 6 figures, 2 tables

Journal ref: Phys. Rev. B 74, 205117 (2006)

Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient

Authors: H. K. Choi, W. O. Lee, Y. S. OH, K. H. Kim, Y. D. Park, S. S. A. Seo, T. W. Noh, Y. S. Kim, Z. G. Khim, I. T. Jeong, J. C. Woo, S. H. Chun

Abstract: We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above… ▽ More We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements. △ Less

Submitted 17 March, 2006; originally announced March 2006.

Comments: 3 pages, 3 figures