Showing 1–9 of 9 results for author: Park, Y D

Suppressed terahertz dynamics of water confined in nanometer gaps

Authors: Hyosim Yang, Gangseon Ji, Min Choi, Seondo Park, Hyeonjun An, Hyoung-Taek Lee, Joonwoo Jeong, Yun Daniel Park, Kyungwan Kim, Noejung Park, Jeeyoon Jeong, Dai-Sik Kim, Hyeong-Ryeol Park

Abstract: Nanoconfined waters have been extensively studied within various systems, demonstrating low permittivity under static conditions; however, their dynamics have been largely unexplored due to the lack of a robust platform, particularly in the terahertz (THz) regime where hydrogen bond dynamics occur. We report the THz complex refractive index of nanoconfined water within metal gaps ranging in width… ▽ More Nanoconfined waters have been extensively studied within various systems, demonstrating low permittivity under static conditions; however, their dynamics have been largely unexplored due to the lack of a robust platform, particularly in the terahertz (THz) regime where hydrogen bond dynamics occur. We report the THz complex refractive index of nanoconfined water within metal gaps ranging in width from 2 to 20 nanometers, spanning mostly interfacial waters all the way to quasi-bulk waters. These loop nanogaps, encasing water molecules, sharply enhance light-matter interactions, enabling precise measurements of refractive index, both real and imaginary parts, of nanometer-thick layers of water. Under extreme confinement, the suppressed dynamics of the long-range correlation of hydrogen bond networks corresponding to the THz frequency regime result in a significant reduction in the terahertz permittivity of even 'non-interfacial' water. This platform provides valuable insights into the long-range collective dynamics of water molecules which is crucial to understanding water-mediated processes such as protein folding, lipid rafts, and molecular recognition. △ Less

Submitted 4 November, 2023; v1 submitted 29 October, 2023; originally announced October 2023.

Bright visible light emission from graphene

Authors: Young Duck Kim, Hakseong Kim, Yujin Cho, Ji Hoon Ryoo, Cheol-Hwan Park, Pilkwang Kim, Yong Seung Kim, Sunwoo Lee, Yilei Li, Seung-Nam Park, Yong Shim Yoo, Duhee Yoon, Vincent E. Dorgan, Eric Pop, Tony F. Heinz, James Hone, Seung-Hyun Chun, Hyeonsik Cheong, Sang Wook Lee, Myung-Ho Bae, Yun Daniel Park

Abstract: Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficien… ▽ More Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficiency emitter in the mid-infrared range. However, emission in the visible range has remained elusive. Here we report the observation of bright visible-light emission from electrically biased suspended graphenes. In these devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K) become spatially localised at the centre of graphene layer, resulting in a 1000-fold enhancement in the thermal radiation efficiency. Moreover, strong optical interference between the suspended graphene and substrate can be utilized to tune the emission spectrum. We also demonstrate the scalability of this technique by realizing arrays of chemical-vapour-deposited graphene bright visible-light emitters. These results pave the way towards the realisation of commercially viable large-scale, atomically-thin, flexible and transparent light emitters and displays with low-operation voltage, and graphene-based, on-chip ultrafast optical communications. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Comments: 63 page

Journal ref: Nature Nanotechnology 2015

Transferring MBE-grown topological insulator films to arbitrary substrates and Metal-insulator transition via Dirac gap

Authors: Namrata Bansal, Myung Rae Cho, Matthew Brahlek, Nikesh Koirala, Yoichi Horibe, Jing Chen, Weida Wu, Yun Daniel Park, Seongshik Oh

Abstract: Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaini… ▽ More Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity. △ Less

Submitted 25 February, 2014; originally announced February 2014.

Comments: 12 pages, 4 figures

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Authors: Yong Seung Kim, Jae Hong Lee, Young Duck Kim, Sahng-Kyoon Jerng, Kisu Joo, Eunho Kim, Jongwan Jung, Euijoon Yoon, Yun Daniel Park, Sunae Seo, Seung-Hyun Chun

Abstract: A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleatio… ▽ More A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD. △ Less

Submitted 26 June, 2013; v1 submitted 5 March, 2012; originally announced March 2012.

Comments: 22 pages, 6 figures

Journal ref: Nanoscale, 5, 1221 (2013)

Interplay between carrier and impurity concentrations in annealed Ga$_{1-x}$Mn$_{x}$As intrinsic anomalous Hall Effect

Authors: S. H. Chun, Y. S. Kim, H. K. Choi, I. T. Jeong, W. O. Lee, K. S. Suh, Y. S. OH, K. H. Kim, Z. G. Khim, J. C. Woo, Y. D. Park

Abstract: Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, e… ▽ More Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect. △ Less

Submitted 30 March, 2006; originally announced March 2006.

Comments: 4 pages, 5 figures

Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient

Authors: H. K. Choi, W. O. Lee, Y. S. OH, K. H. Kim, Y. D. Park, S. S. A. Seo, T. W. Noh, Y. S. Kim, Z. G. Khim, I. T. Jeong, J. C. Woo, S. H. Chun

Abstract: We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above… ▽ More We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements. △ Less

Submitted 17 March, 2006; originally announced March 2006.

Comments: 3 pages, 3 figures

Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Authors: Y. D. Park, J. D. Lim, K. S. Suh, S. B. Shim, J. S. Lee, C. R. Abernathy, S. J. Pearton, Y. S. Kim, Z. G. Khim, R. G. Wilson

Abstract: Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraord… ▽ More Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K. △ Less

Submitted 11 August, 2003; originally announced August 2003.

Journal ref: Phys. Rev. B 68, 085210 (2003)

Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

Authors: Y. D. Park, A. T. Hanbicki, J. E. Mattson, B. T. Jonker

Abstract: We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with… ▽ More We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3. △ Less

Submitted 8 May, 2002; originally announced May 2002.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 81, 1471 (2002)

Reduction Of Spin Injection Efficiency by Interface Spin Scattering

Authors: R. M. Stroud, A. T. Hanbicki, Y. D. Park, A. G. Petukhov, B. T. Jonker, G. Itskos, G. Kioseoglou, M. Furis, A. Petrou

Abstract: We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.… ▽ More We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%. △ Less

Submitted 26 October, 2001; originally announced October 2001.

Comments: 13 pages, 5 figures; submitted to PRL

Journal ref: Phys. Rev. Lett. 89, 166602 (2002)