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Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment
Authors:
A. R. Cadore,
B. L. T. Rosa,
I. Paradisanos,
S. Mignuzzi,
D. De Fazio,
E. M. Alexeev,
J. E. Muench,
G. Kakavelakis,
S. M. Shinde,
D. Yoon,
S. Tongay,
K. Watanabe,
T. Taniguchi,
E. Lidorikis,
I. Goykhman,
G. Soavi,
A. C. Ferrari
Abstract:
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum…
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Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs
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Submitted 2 May, 2023;
originally announced May 2023.
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Partial molecular orbitals in face-sharing 3$d$ manganese trimer: Comparative studies on Ba$_{4}$TaMn$_{3}$O$_{12}$ and Ba$_{4}$NbMn$_{3}$O$_{12}$
Authors:
Anzar Ali,
Heung-Sik Kim,
Poonam Yadav,
Suheon Lee,
Duhee Yoon,
Sungkyun Choi
Abstract:
We present a molecular orbital candidate Ba$_{4}$TaMn$_{3}$O$_{12}$ with a face-sharing octahedra trimer, by comparing it with a related compound Ba$_{4}$NbMn$_{3}$O$_{12}$. The synthesis of the polycrystalline powder is optimized by suppressing the secondary impurity phase via x-ray diffraction. Magnetic susceptibility measurements on the optimized samples reveal a weak magnetic hysteresis with m…
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We present a molecular orbital candidate Ba$_{4}$TaMn$_{3}$O$_{12}$ with a face-sharing octahedra trimer, by comparing it with a related compound Ba$_{4}$NbMn$_{3}$O$_{12}$. The synthesis of the polycrystalline powder is optimized by suppressing the secondary impurity phase via x-ray diffraction. Magnetic susceptibility measurements on the optimized samples reveal a weak magnetic hysteresis with magnetic transitions consistent with heat capacity results. The effective magnetic moments from susceptibility indicate a strongly coupled $S=2$ antiferromagnetic trimer at around room temperature, whereas the estimated magnetic entropy from heat capacity suggests the localized $S=3/2$ timer. These results can be explainable by a partial molecular orbital state, in which three $t_{2g}$ electrons are localized in each Mn ion and one $e_{g}$ electron is delocalized over two-end Mn ions of the trimer based on density functional theory calculations. This unconventional 3$d$ orbital state is comprehended as a consequence of competition between the hybrid interatomic orbitals within the Mn trimer and the local moment formation by on-site Coulomb correlations.
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Submitted 6 April, 2024; v1 submitted 28 April, 2023;
originally announced April 2023.
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Incommensurate antiferromagnetic order in weakly frustrated two-dimensional van der Waals insulator CrPSe$_3$
Authors:
Baithi Mallesh,
Ngoc Toan Dang,
Tuan Anh Tran,
Dinh Hoa Luong,
Krishna P. Dhakal,
Duhee Yoon,
Anton V. Rutkauskas,
Sergei E. Kichanov,
Ivan Y. Zel,
Jeongyoung Kim,
Denis P. Kozlenko,
Young Hee Lee,
Dinh Loc Duong
Abstract:
Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetic-frustrated two-dimensional van der Waals material CrPSe$_3$. Polycrystalline CrPSe$_3$ was synthesized at an optimized temperature of 700$^\circ$C to avoid the formati…
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Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetic-frustrated two-dimensional van der Waals material CrPSe$_3$. Polycrystalline CrPSe$_3$ was synthesized at an optimized temperature of 700$^\circ$C to avoid the formation of any secondary phases (e.g., Cr$_2$Se$_3$). The antiferromagnetic transition appeared at $T_N\sim 126$ K with a large Curie-Weiss temperature $T_{\rm CW} \sim -371$ via magnetic susceptibility measurements, indicating weak frustration in CrPSe$_3$ with a frustration factor $f (|T_{\rm CW}|/T_N) \sim 3$. Evidently, the formation of long-range incommensurate spin-density wave antiferromagnetic order with the propagation vector $k = (0, 0.04, 0)$ was revealed by neutron diffraction measurements at low temperatures (below 120K). The monoclinic crystal structure of C2/m symmetry is preserved over the studied temperature range down to 20K, as confirmed by Raman spectroscopy measurements. Our findings on the spin density wave antiferromagnetic order in two-dimensional (2D) magnetic materials, not previously observed in the MPX$_3$ family, are expected to enrich the physics of magnetism at the 2D limit, thereby opening opportunities for their practical applications in spintronics and quantum devices.
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Submitted 26 October, 2022;
originally announced October 2022.
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Lattice dynamics and spin-phonon interaction in strained NiO films
Authors:
Alireza Kashir,
Veronica Goian,
Daseob Yoon,
Byeong-Gwan Cho,
Yoon Hee Jeong,
Gil-Ho Lee,
Stanislav Kamba
Abstract:
NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of…
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NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature.
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Submitted 19 February, 2020;
originally announced February 2020.
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Topological defects and geometric memory across the nematic-smectic A liquid crystal phase transition
Authors:
Ahram Suh,
Min-Jun Gim,
Daniel Beller,
Dong Ki Yoon
Abstract:
We study transformations of self-organized defect arrays at the nematic-smectic A liquid crystal phase transition, and show that these defect configurations are correlated, or "remembered", across the phase transition. A thin film of thermotropic liquid crystal is subjected to hybrid anchoring by an air interface and a water substrate, and viewed under polarized optical microscopy. Upon heating fr…
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We study transformations of self-organized defect arrays at the nematic-smectic A liquid crystal phase transition, and show that these defect configurations are correlated, or "remembered", across the phase transition. A thin film of thermotropic liquid crystal is subjected to hybrid anchoring by an air interface and a water substrate, and viewed under polarized optical microscopy. Upon heating from smectic-A to nematic, a packing of focal conic domains melts into a dense array of boojums---nematic surface defects---which then coarsens by pair-annihilation. With the aid of Landau-de Gennes numerical modeling, we elucidate the topological and geometrical rules underlying this transformation. In the transition from nematic to smectic-A, we show that focal conic domain packings are organized over large scales in patterns that retain a geometric memory of the nematic boojum configuration, which can be recovered with remarkable fidelity.
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Submitted 10 April, 2019;
originally announced April 2019.
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Niobium diselenide superconducting photodetectors
Authors:
Gavin J. Orchin,
Domenico De Fazio,
Angelo Di Bernardo,
Matthew Hamer,
Duhee Yoon,
Alisson R. Cadore,
Ilya Goykhman,
Kenji Watanabe,
Takashi Taniguchi,
Jason W. A. Robinson,
Roman V. Gorbachev,
Andrea C. Ferrari,
Robert H. Hadfield
Abstract:
We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken…
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We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging.
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Submitted 6 March, 2019;
originally announced March 2019.
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Tetrahedral amorphous carbon resistive memories with graphene-based electrodes
Authors:
A. K. Ott,
C. Dou,
U. Sassi,
I. Goykhman,
D. Yoon,
J. Wu,
A. Lombardo,
A. C. Ferrari
Abstract:
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electro…
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Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$μ$W/$μ$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures
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Submitted 5 May, 2018;
originally announced May 2018.
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Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
Authors:
Erik Piatti,
Domenico De Fazio,
Dario Daghero,
Srinivasa R. Tamalampudi,
Duhee Yoon,
Andrea C. Ferrari,
Renato S. Gonnelli
Abstract:
Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS$_2$, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is…
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Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS$_2$, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multi-valley Fermi surface (FS) is associated with the SC state, involving 6 electron pockets at the Q/Q' points. Here, we perform low-temperature transport measurements in ion-gated MoS$_2$ flakes. We show that a fully multi-valley FS is associated with the SC onset. The Q/Q' valleys fill for doping$\gtrsim2\cdot10^{13}$cm$^{-2}$, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q$_1$ and Q$_2$. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.
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Submitted 27 June, 2018; v1 submitted 19 February, 2018;
originally announced February 2018.
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Broadband, electrically tuneable, third harmonic generation in graphene
Authors:
G. Soavi,
G. Wang,
H. Rostami,
D. Purdie,
D. De Fazio,
T. Ma,
B. Luo,
J. Wang,
A. K. Ott,
D. Yoon,
S. Bourelle,
J. E. Muench,
I. Goykhman,
S. Dal Conte,
M. Celebrano,
A. Tomadin,
M. Polini,
G. Cerullo,
A. C. Ferrari
Abstract:
Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we s…
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Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we show that the third harmonic generation efficiency in graphene can be tuned by over two orders of magnitude by controlling the Fermi energy and the incident photon energy. This is due to logarithmic resonances in the imaginary part of the nonlinear conductivity arising from multi-photon transitions. Thanks to the linear dispersion of the massless Dirac fermions, ultrabroadband electrical tunability can be achieved, paving the way to electrically-tuneable broadband frequency converters for applications in optical communications and signal processing.
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Submitted 6 October, 2017;
originally announced October 2017.
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Bright visible light emission from graphene
Authors:
Young Duck Kim,
Hakseong Kim,
Yujin Cho,
Ji Hoon Ryoo,
Cheol-Hwan Park,
Pilkwang Kim,
Yong Seung Kim,
Sunwoo Lee,
Yilei Li,
Seung-Nam Park,
Yong Shim Yoo,
Duhee Yoon,
Vincent E. Dorgan,
Eric Pop,
Tony F. Heinz,
James Hone,
Seung-Hyun Chun,
Hyeonsik Cheong,
Sang Wook Lee,
Myung-Ho Bae,
Yun Daniel Park
Abstract:
Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficien…
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Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficiency emitter in the mid-infrared range. However, emission in the visible range has remained elusive. Here we report the observation of bright visible-light emission from electrically biased suspended graphenes. In these devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K) become spatially localised at the centre of graphene layer, resulting in a 1000-fold enhancement in the thermal radiation efficiency. Moreover, strong optical interference between the suspended graphene and substrate can be utilized to tune the emission spectrum. We also demonstrate the scalability of this technique by realizing arrays of chemical-vapour-deposited graphene bright visible-light emitters. These results pave the way towards the realisation of commercially viable large-scale, atomically-thin, flexible and transparent light emitters and displays with low-operation voltage, and graphene-based, on-chip ultrafast optical communications.
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Submitted 13 September, 2017;
originally announced September 2017.
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Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2
Authors:
Eva A. A. Pogna,
Margherita Marsili,
Domenico De Fazio,
Stefano Dal Conte,
Cristian Manzoni,
Davide Sangalli,
Duhee Yoon,
Antonio Lombardo,
Andrea C. Ferrari,
Andrea Marini,
Giulio Cerullo,
Deborah Prezzi
Abstract:
Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broad…
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Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broadband probing, to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, upon photoexcitation of different excitonic transitions. We find that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. First-principle modeling of the ultrafast optical response reveals that a transient bandgap renormalization, caused by the presence of photo-excited carriers, is primarily responsible for the observed features. Our results demonstrate the strong impact of many-body effects in the transient optical response of TMDs even in the low-excitation-density regime.
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Submitted 20 April, 2017;
originally announced April 2017.
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Raman spectroscopy of graphene under ultrafast laser excitation
Authors:
C. Ferrante,
A. Virga,
L. Benfatto,
M. Martinati,
D. De Fazio,
U. Sassi,
C. Fasolato,
A. K. Ott,
P. Postorino,
D. Yoon,
G. Cerullo,
F. Mauri,
A. C. Ferrari,
T. Scopigno
Abstract:
The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3ps pulses, which trade off between impulsive stimulation and spectral resolutio…
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The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3ps pulses, which trade off between impulsive stimulation and spectral resolution. We localize energy into hot carriers, generating non-equilibrium temperatures in the ~1700-3100K range, far exceeding that of the phonon bath, while simultaneously detecting the Raman response. The linewidth of both G and 2D peaks show an increase as function of the electronic temperature. We explain this as a result of the Dirac cones' broadening and electron-phonon scattering in the highly excited transient regime, important for the emerging field of graphene-based photonics and optoelectronics.
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Submitted 14 February, 2018; v1 submitted 1 April, 2017;
originally announced April 2017.
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p-wave triggered superconductivity in single layer graphene on an electron-doped oxide superconductor
Authors:
Angelo Di Bernardo,
Oded Millo,
Matteo Barbone,
Hen Alpern,
Yoav Kalcheim,
Ugo Sassi,
Anna Ott,
Domenico De Fazio,
Duhee Yoon,
Mario Amado,
Andrea C. Ferrari,
Jacob Linder,
Jason W. A. Robinson
Abstract:
Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on t…
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Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing single layer graphene on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in single layer graphene. The realization of unconventional superconductivity in single layer graphene offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.
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Submitted 6 February, 2017;
originally announced February 2017.
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Large-scale quantum-emitter arrays in atomically thin semiconductors
Authors:
Carmen Palacios-Berraquero,
Dhiren M. Kara,
Alejandro R. -P. Montblanch,
Matteo Barbone,
Pawel Latawiec,
Duhee Yoon,
Anna K. Ott,
Marko Loncar,
Andrea C. Ferrari,
Mete Atature
Abstract:
The flourishing field of two-dimensional (2D) nanophotonics has generated much excitement in the quantum technologies community after the identification of quantum emitters (QEs) in layered materials (LMs). LMs offer many advantages as platforms for quantum circuits, such as integration within hybrid technologies, valley degree of freedom and strong spin-orbit coupling. QEs in LMs, however, suffer…
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The flourishing field of two-dimensional (2D) nanophotonics has generated much excitement in the quantum technologies community after the identification of quantum emitters (QEs) in layered materials (LMs). LMs offer many advantages as platforms for quantum circuits, such as integration within hybrid technologies, valley degree of freedom and strong spin-orbit coupling. QEs in LMs, however, suffer from uncontrolled occurrences, added to the uncertainty over their origin, which has been linked to defects and strain gradients. Here, we report a scalable method to create arrays of single-photon emitting QEs in tungsten diselenide (WSe2) and tungsten disulphide (WS2) using a nanopatterned silica substrate. We obtain devices with QE numbers in the range of hundreds, limited only by the flake size, and a QE yield approaching unity. The overall quality of these deterministic QEs surpasses that of their randomly appearing counterparts, with spectral wanderings of around 0.1 meV, an order of magnitude lower than previous reports. Our technique solves the scalability challenge for LM-based quantum photonic devices.
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Submitted 14 September, 2016;
originally announced September 2016.
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Raman fingerprints of atomically precise graphene nanoribbons
Authors:
Ivan A. Verzhbitskiy,
Marzio De Corato,
Alice Ruini,
Elisa Molinari,
Akimitsu Narita,
Yunbin Hu,
Matthias Georg Schwab,
M. Bruna,
D. Yoon,
S. Milana,
Xinliang Feng,
Klaus Müllen,
Andrea C. Ferrari,
Cinzia Casiraghi,
Deborah Prezzi
Abstract:
Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is parti…
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Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.
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Submitted 13 May, 2016;
originally announced May 2016.
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Fast Fabrication of Sub-200-nm Nanogrooves using Liquid Crystal Material
Authors:
Dae Seok Kim,
Yun Jeong Cha,
Min-Jun Gim,
Dong Ki Yoon
Abstract:
Self-assembly of soft materials attracts keen interest for patterning applications owing to its ease and spontaneous behavior. We report the fabrication of nanogrooves using sublimation and recondensation of liquid crystal (LC) materials. First, well-aligned smectic LC structures are obtained on the micron-scale topographic patterns of the microchannel; then the sublimation and recondensation proc…
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Self-assembly of soft materials attracts keen interest for patterning applications owing to its ease and spontaneous behavior. We report the fabrication of nanogrooves using sublimation and recondensation of liquid crystal (LC) materials. First, well-aligned smectic LC structures are obtained on the micron-scale topographic patterns of the microchannel; then the sublimation and recondensation process directly produces nanogrooves having sub-200-nm scale. The entire process can be completed in less than 30 min. After it is replicated using an ultraviolet-curable polymer, our platform can be used as an alignment layer to control other guest LC materials.
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Submitted 25 April, 2016;
originally announced April 2016.
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Atomically thin quantum light emitting diodes
Authors:
Carmen Palacios Berraquero,
Matteo Barbone,
Dhiren M. Kara,
Xiaolong Chen,
Ilya Goykhman,
Duhee Yoon,
Anna K. Ott,
Jan Beitner,
Kenji Watanabe,
Takashi Taniguchi,
Andrea C. Ferrari,
Mete Atatüre
Abstract:
Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal b…
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Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
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Submitted 31 August, 2016; v1 submitted 29 March, 2016;
originally announced March 2016.
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Chiral nematic self-assembly of minimally surface damaged chitin nanofibrils and its load bearing functions
Authors:
Dongyeop X. Oh,
Yun Jeong Cha,
Hoang-Linh Nguyen,
Hwa Heon Je,
Yong Seok Jho,
Dong Soo Hwang,
Dong Ki Yoon
Abstract:
Chitin is one of the most abundant biomaterials in nature, with 10^10 tons produced annually as hierarchically organized nanofibril fillers to reinforce the exoskeletons of arthropods. This green and cheap biomaterial has attracted great attention due to its potential application to reinforce biomedical materials. Despite that, its practical use is limited since the extraction of chitin nanofibril…
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Chitin is one of the most abundant biomaterials in nature, with 10^10 tons produced annually as hierarchically organized nanofibril fillers to reinforce the exoskeletons of arthropods. This green and cheap biomaterial has attracted great attention due to its potential application to reinforce biomedical materials. Despite that, its practical use is limited since the extraction of chitin nanofibrils requires surface modification involving harsh chemical treatments, leading to difficulties in reproducing their natural prototypal hierarchical structure, i.e. chiral nematic phase. Here, we develop a chemical etching-free approach using calcium ions, called natural way, to disintegrate the chitin nanofibrils while keeping the essential moiety for the self-assembly, ultimately resulting in the reproduction of chitins natural chiral structure in a polymeric matrix. This chiral chitin nanostructure exceptionally toughens the composite. Our resultant chiral nematic phase of chitin materials can contribute to the understanding and use of the reinforcing strategy in nature.
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Submitted 24 March, 2016;
originally announced March 2016.
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Linkage-length dependent structuring behaviour of bent-core molecules in helical nanostructures
Authors:
Hanim Kim,
Anna Zep,
Seong Ho Ryu,
Hyungju Ahn,
Tae Joo Shin,
Sang Bok Lee,
Damian Pociecha,
Ewa Gorecka,
Dong Ki Yoon
Abstract:
We studied the correlation between the molecular structure and the formation of helical nanofilaments (HNFs) of bent-core dimeric molecules with varying linkage lengths. To obtain precise structural data, a single domain of HNFs was prepared under physical confinement using porous 1D nanochannels, made up of anodic aluminium oxide films. Electron microscopy and grazing incidence X-ray diffraction…
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We studied the correlation between the molecular structure and the formation of helical nanofilaments (HNFs) of bent-core dimeric molecules with varying linkage lengths. To obtain precise structural data, a single domain of HNFs was prepared under physical confinement using porous 1D nanochannels, made up of anodic aluminium oxide films. Electron microscopy and grazing incidence X-ray diffraction were used to elucidate the linkage length-dependent formation of HNFs.
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Submitted 16 February, 2016;
originally announced February 2016.
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High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors
Authors:
D. De Fazio,
I. Goykhman,
M. Bruna,
A. Eiden,
S. Milana,
D. Yoon,
U. Sassi,
M. Barbone,
D. Dumcenco,
K. Marinov,
A. Kis,
A. C. Ferrari
Abstract:
We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5…
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We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642nm. This is at least two orders of magnitude higher than bulk-semiconductor flexible membranes and other flexible PDs based on graphene and layered materials. The photoconductive gain is up to 4x10^5. The photocurrent is in the 0.1-100 uA range. The devices are semi-transparent, with just 8% absorption at 642nm and work stably upon bending to a curvature of 6cm. These capabilities and the low voltage operation (<1V) make them attractive for wearable applications.
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Submitted 27 December, 2015;
originally announced December 2015.
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Controlling Gaussian and mean curvatures at microscale by sublimation and condensation of smectic liquid crystals
Authors:
Dae Seok Kim,
Yun Jeong Cha,
Mun Ho Kim,
Oleg D. Lavrentovich,
Dong Ki Yoon
Abstract:
Soft materials with layered structure such as membranes, block copolymers, and smectics exhibit intriguing morphologies with nontrivial curvatures. We report on restructuring the Gaussian and mean curvatures of smectic A films with free surface in the process of sintering, i.e. reshaping at elevated temperatures. The pattern of alternating patches of negative, zero, and positive mean curvature of…
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Soft materials with layered structure such as membranes, block copolymers, and smectics exhibit intriguing morphologies with nontrivial curvatures. We report on restructuring the Gaussian and mean curvatures of smectic A films with free surface in the process of sintering, i.e. reshaping at elevated temperatures. The pattern of alternating patches of negative, zero, and positive mean curvature of the air-smectic interface has a profound effect on the rate of sublimation. As a result of sublimation, condensation, and restructuring, initially equilibrium smectic films with negative and zero Gaussian curvature are transformed into structures with pronounced positive Gaussian curvature of layers packing, seldom seen in samples obtained by cooling from the isotropic melt. The observed relationship between the curvatures, bulk elastic behaviour, and interfacial geometries in sintering of smectic liquid crystals paves the way for new approaches to control soft morphologies at micron and submicron scales.
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Submitted 24 November, 2015;
originally announced November 2015.
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Doping dependence of the Raman spectrum of defected graphene
Authors:
M. Bruna,
A. K. Ott,
M. Ijas,
D. Yoon,
U. Sassi,
A. C. Ferrari
Abstract:
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of…
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We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level
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Submitted 16 May, 2014;
originally announced May 2014.
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Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
Authors:
The An Nguyen,
Jae-Ung Lee,
Duhee Yoon,
Hyeonsik Cheong
Abstract:
The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV were used. The position and…
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The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV were used. The position and the line shape of the Raman 2D, G*, N, M, and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.
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Submitted 22 April, 2014; v1 submitted 4 April, 2014;
originally announced April 2014.
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Nanopatterning graphite by ion-beam-sputtering: Effects of polycrystallinity
Authors:
Sun Mi Yoon,
J. -S. Kim,
D. Yoon,
H. Cheong,
Y. Kim,
H. H. Lee
Abstract:
Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both the mean uninterrupted ripple length along its ridge and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield…
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Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both the mean uninterrupted ripple length along its ridge and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains. Coarsening of the ripples-accompanying the mass transport across the grain boundaries-should not be driven by thermal diffusion, rather by ion-induced processes.
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Submitted 14 February, 2014;
originally announced February 2014.
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Polarization dependence of double resonant Raman scattering band in bilayer graphene
Authors:
Jae-Ung Lee,
Ngor Mbaye Seck,
Duhee Yoon,
Seon-Myeong Choi,
Young-Woo Son,
Hyeonsik Cheong
Abstract:
The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polar…
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The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman frequency shifts for each peak. We find theoretically that one of these two paths, ignored for a long time, has a small contribution to their scattering intensities but are critical in understanding their polarization dependences. Because of this, the maximum-to-minimum intensity ratios of the four peaks show a strong dependence on the excitation energy, unlike the case of single-layer graphene (SLG). Our findings thus reveal another interesting aspect of electron-phonon interactions in graphitic systems.
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Submitted 14 March, 2014; v1 submitted 2 February, 2014;
originally announced February 2014.
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Fano resonance in Raman scattering of graphene
Authors:
Duhee Yoon,
Dongchan Jeong,
Hu-Jong Lee,
Riichiro Saito,
Young-Woo Son,
Hyun Cheol Lee,
Hyeonsik Cheong
Abstract:
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G…
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Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.
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Submitted 23 May, 2013;
originally announced May 2013.
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Estimation of Young's Modulus of Graphene by Raman Spectroscopy
Authors:
Jae-Ung Lee,
Duhee Yoon,
Hyeonsik Cheong
Abstract:
The Young's modulus of graphene is estimated by measuring the strain applied by a pressure difference across graphene membranes using Raman spectroscopy. The strain induced on pressurized graphene balloons can be estimated directly from the peak shift of the Raman G band. By comparing the measured strain with numerical simulation, we obtained the Young's modulus of graphene. The estimated Young's…
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The Young's modulus of graphene is estimated by measuring the strain applied by a pressure difference across graphene membranes using Raman spectroscopy. The strain induced on pressurized graphene balloons can be estimated directly from the peak shift of the Raman G band. By comparing the measured strain with numerical simulation, we obtained the Young's modulus of graphene. The estimated Young's modulus values of single- and bi-layer graphene are 2.4\pm0.4 TPa and 2.0\pm0.5 TPa, respectively.
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Submitted 11 August, 2012;
originally announced August 2012.
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Polarization dependence of photocurrent in a metal-graphene-metal device
Authors:
Minjung Kim,
Ho Ang Yoon,
Seungwoo Woo,
Duhee Yoon,
Sang Wook Lee,
Hyeonsik Cheong
Abstract:
The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polar…
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The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polarization dependence can be explained as being due to the anisotropic electron-photon interaction of Dirac electrons in graphene.
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Submitted 31 July, 2012;
originally announced July 2012.
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Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy
Authors:
Duhee Yoon,
Young-Woo Son,
Heonsik Cheong
Abstract:
The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substr…
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The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substrate plays a crucial role in determining the physical properties of graphene, and hence its effect must be accounted for in the interpretation of experimental data taken at cryogenic or elevated temperatures.
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Submitted 13 July, 2011;
originally announced July 2011.
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Nanomechanical Resonators and Their Applications in Biological/Chemical Detection: Nanomechanics Principles
Authors:
Kilho Eom,
Harold S. Park,
Dae Sung Yoon,
Taeyun Kwon
Abstract:
Recent advances in nanotechnology have led to the development of nano-electro-mechanical systems (NEMS) such as nanomechanical resonators, which have recently received significant attention from the scientific community. This has not only been for their capability for the label-free detection of bio/chemical-molecules at single-molecule (or atomic) resolution for future applications such as the ea…
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Recent advances in nanotechnology have led to the development of nano-electro-mechanical systems (NEMS) such as nanomechanical resonators, which have recently received significant attention from the scientific community. This has not only been for their capability for the label-free detection of bio/chemical-molecules at single-molecule (or atomic) resolution for future applications such as the early diagnostics of diseases such as cancer, but also for their unprecedented ability to detect physical quantities such as molecular weight, elastic stiffness, surface stress, and surface elastic stiffness for adsorbed molecules on the surface. Most experimental works on resonator-based molecular detection have been based on the principle that molecular adsorption onto a resonator surface increases the effective mass, and consequently decreases the resonant frequencies of the nanomechanical resonator. However, this principle is insufficient to provide fundamental insights into resonator-based molecular detection at the nanoscale; this is due to recently proposed novel nanoscale detection principles including various effects such as surface effects, nonlinear oscillations, coupled resonance, and stiffness effects. Therefore, our objective in this review is to overview the current attempts to understand the underlying mechanisms in nanoresonator-based detection using physical models coupled to computational simulations and/or experiments. Specifically, we will focus on issues of special relevance to the dynamic behavior of nanoresonators and their applications in biological/chemical detection. We additionally provide extensive discussion regarding potentially fruitful future research directions coupling experiments and simulations in order to develop a fundamental understanding of the basic physical principles that govern NEMS and NEMS-based sensing applications.
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Submitted 9 May, 2011;
originally announced May 2011.
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Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy
Authors:
Jae-Ung Lee,
Duhee Yoon,
Hakseong Kim,
Sang Wook Lee,
Hyeonsik Cheong
Abstract:
The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2$D$ band of the Raman scattering spectrum, and the thermal conduc…
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The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2$D$ band of the Raman scattering spectrum, and the thermal conductivity was deduced by analyzing heat diffusion equations assuming that the substrate is a heat sink at ambient temperature. The obtained thermal conductivity values range from $\sim$1800 Wm$^{-1}$K$^{-1}$ near 325 K to $\sim$710 Wm$^{-1}$K$^{-1}$ at 500 K.
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Submitted 17 March, 2011;
originally announced March 2011.
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Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene
Authors:
Duhee Yoon,
Young-Woo Son,
Hyeonsik Cheong
Abstract:
Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro- Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditio…
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Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro- Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditions owing to both the distorted Dirac cones and anisotropic modifications of phonon dispersion under uniaxial strains. Quantitative agreements between the calculation and experiment enable us to determine the dominant double- resonance Raman scattering path, thereby answering a fundamental question concerning this key experimental analyzing tool for graphitic systems.
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Submitted 25 April, 2011; v1 submitted 16 March, 2011;
originally announced March 2011.
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NMR study on the stability of the magnetic ground state in MnCr${}_2$O${}_4$
Authors:
Dong Young Yoon,
Soonchil Lee,
Yoon Seok Oh,
Kee Hoon Kim
Abstract:
The canting angles and fluctuation of the magnetic ion spins of spinel oxide MnCr${}_2$O${}_4$ were studied by nuclear magnetic resonance (NMR) at low temperatures, which has a collinear ferrimagnetic order below $T_C$ and a ferrimagnetic spiral order below $T_s < T_C$. Contrary to previous reports, only one spin canting angle of Cr ions was observed. The spin canting angles of Mn and Cr ions in t…
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The canting angles and fluctuation of the magnetic ion spins of spinel oxide MnCr${}_2$O${}_4$ were studied by nuclear magnetic resonance (NMR) at low temperatures, which has a collinear ferrimagnetic order below $T_C$ and a ferrimagnetic spiral order below $T_s < T_C$. Contrary to previous reports, only one spin canting angle of Cr ions was observed. The spin canting angles of Mn and Cr ions in the ferrimagnetic spiral obtained at a liquid-He temperature were $43\,^{\circ}$ and $110\,^{\circ}$, respectively. The nuclear spin-spin relaxation was determined by the Suhl-Nakamura interaction at low temperatures but the relaxation rate $T_2^{-1}$ increases rapidly as the temperature approaches $T_s$. This indicates that the fluctuation of the spiral component becomes faster as the temperature increases but not fast enough to leave an averaged hyperfine field to nuclei in the time scale of nuclear spin precession in the ferrimagnetic phase, which is on the order of $10^{-8}$ s. The spiral volume fraction measured for various temperatures reveals that the collinear and the spiral ferrimagnetic phases are mixed below the transition temperature of the spiral order. The temperature hysteresis in the volume fraction implies that this transition has first-order characteristics.
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Submitted 10 June, 2010;
originally announced June 2010.
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High coercivity cobalt carbide nanoparticles processed via polyol reaction: A new permanent magnet material
Authors:
V. G. Harris,
Y. Chen,
A. Yang,
S. Yoon,
Z. Chen,
Anton Geiler,
C. N. Chinnasamy,
L. H. Lewis,
C. Vittoria,
E. E. Carpenter,
K. J. Carroll,
R. Goswami,
M. A. Willard,
L. Kurihara,
M. Gjoka,
O. Kalogirou
Abstract:
Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase vol…
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Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase volume, particle size, and particle morphology all play important roles in determining permanent magnet properties. Further, the acicular particle shape provides an enhancement to the coercivity via dipolar anisotropy energy as well as offering potential for particle alignment in nanocomposite cores. While Curie temperatures are near 510K at temperatures approaching 700 K the carbide powders experience an irreversible dissociation to metallic cobalt and carbon thus limiting operational temperatures to near room temperature.
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Submitted 6 November, 2009;
originally announced November 2009.
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Interference effect on Raman spectrum of graphene on SiO_2/Si
Authors:
Duhee Yoon,
Hyerim Moon,
Young-Woo Son,
Jin Sik Choi,
Bae Ho Park,
Young Hun Cha,
Young Dong Kim,
Hyeonsik Cheong
Abstract:
The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of d…
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The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of dielectric layers (SiO_2) underneath it. The ratio is shown to change by almost 370% when the thickness is varied by 60%. The large variation in the ratio is well explained by theoretical calculations considering multiple Raman scattering events at the interfaces. Our analysis shows that the interference effect is critical in extracting the intrinsic 2D to G intensity ratio and therefore must be taken into account in extracting various physical properties of graphene from Raman measurements.
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Submitted 29 August, 2009;
originally announced August 2009.
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Relaxation Mechanism for Ordered Magnetic Materials
Authors:
C. Vittoria,
S. D. Yoon,
A. Widom
Abstract:
We have formulated a relaxation mechanism for ferrites and ferromagnetic metals whereby the coupling between the magnetic motion and lattice is based purely on continuum arguments concerning magnetostriction. This theoretical approach contrasts with previous mechanisms based on microscopic formulations of spin-phonon interactions employing a discrete lattice. Our model explains for the first tim…
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We have formulated a relaxation mechanism for ferrites and ferromagnetic metals whereby the coupling between the magnetic motion and lattice is based purely on continuum arguments concerning magnetostriction. This theoretical approach contrasts with previous mechanisms based on microscopic formulations of spin-phonon interactions employing a discrete lattice. Our model explains for the first time the scaling of the intrinsic FMR linewidth with frequency, and 1/M temperature dependence and the anisotropic nature of magnetic relaxation in ordered magnetic materials, where M is the magnetization. Without introducing adjustable parameters our model is in reasonable quantitative agreement with experimental measurements of the intrinsic magnetic resonance linewidths of important class of ordered magnetic materials, insulator or metals.
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Submitted 26 June, 2009;
originally announced June 2009.
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Nano granular metallic Fe - oxygen deficient TiO$_{2-δ}$ composite films: A room temperature, highly carrier polarized magnetic semiconductor
Authors:
S. D. Yoon,
C. Vittoria,
V. G. Harris,
A. Widom,
K. E. Miller,
M. E. McHenry
Abstract:
Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-δ}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition of Fe and TiO$_2$ resulted in $\approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-δ}$ matrix. The films show ferromagnetic behavior…
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Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-δ}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition of Fe and TiO$_2$ resulted in $\approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-δ}$ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 Gauss at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed well with the measured value. The film composite structure was characterized as p-type magnetic semiconductor at 300 K with a carrier density of the order of $ 10^{22} /{\rm cm^3}$. The hole carriers were excited at the interface between the nano granular Fe and TiO$_{2-δ}$ matrix similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. From the large anomalous Hall effect directly observed in these films it follows that the holes at the interface were strongly spin polarized. Structure and magneto transport properties suggested that these PLD films have potential nano spintronics applications.
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Submitted 8 January, 2008;
originally announced January 2008.
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Magnetoelectric Effects on Composite Nano Granular $Fe/TiO_{2-δ}$ Films
Authors:
S. D. Yoon,
C. Vittoria,
V. G. Harris,
A. Widom,
Y. N. Srivastava
Abstract:
Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelectric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hal…
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Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelectric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hall resistance measured above 50 K, the magnetoelectic resistance below 50 K is significantly larger and exhibits an even symmetry with respect to magnetic field reversal $H\to -H$. The measurement technique required attached electrodes in the plane of the film composite in order to measure voltage as a function of bias current and external magnetic field. To our knowledge, the composite films are unique in terms of showing magnetoelectric effects at low temperatures, $<$ 50 K, and anomalous Hall effects at high temperatures, $>$ 50 K.
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Submitted 29 November, 2007;
originally announced November 2007.
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Dynamical Response of Nanomechanical Resonators to Biomolecular Interactions
Authors:
Kilho Eom,
Tae Yun Kwon,
Dae Sung Yoon,
Hong Lim Lee,
Tae Song Kim
Abstract:
We studied the dynamical response of a nanomechanical resonator to biomolecular (e.g. DNA) adsorptions on a resonator's surface by using a theoretical model, which considers the Hamiltonian H such that the potential energy consists of elastic bending energy of a resonator and the potential energy for biomolecular interactions. It was shown that the resonant frequency shift of a resonator due to…
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We studied the dynamical response of a nanomechanical resonator to biomolecular (e.g. DNA) adsorptions on a resonator's surface by using a theoretical model, which considers the Hamiltonian H such that the potential energy consists of elastic bending energy of a resonator and the potential energy for biomolecular interactions. It was shown that the resonant frequency shift of a resonator due to biomolecular adsorption depends on not only the mass of adsorbed biomolecules but also the biomolecular interactions. Specifically, for dsDNA adsorption on a resonator's surface, the resonant frequency shift is also dependent on the ionic strength of a solvent, implying the role of molecular interactions on the dynamic behavior of a resonator. This indicates that nanomechanical resonators may enable one to quantify the biomolecular mass, implying the enumeration of biomolecules, as well as gain insight into intermolecular interactions between adsorbed biomolecules on the surface.
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Submitted 17 August, 2007; v1 submitted 25 June, 2007;
originally announced June 2007.
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Room temperature spin polarized magnetic semiconductor
Authors:
Soack Dae Yoon,
Carmine Vittoria,
Vincent G. Harris,
Allan Widom
Abstract:
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-δ}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure…
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Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-δ}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure was characterized as p-type magnetic semiconductor at $300 ^oK$ with a carrier density of the order of $10^{20} /cm^3$. The undoped pure TiO$_{2-δ}$ film was characterized as an n-type magnetic semiconductor. The hole carriers were excited at the interface between the granular Fe and TiO$_{2-δ}$ layers similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. The holes at the interface were polarized in an applied magnetic field raising the possibility that these granular MOS structures can be utilized for practical spintronic device applications.
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Submitted 21 May, 2007;
originally announced May 2007.
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Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO$_{2-δ}$
Authors:
Soack Dae Yoon,
Vincent G. Harris,
Carmine Vittoria,
Allan Widom
Abstract:
TiO$_{2-δ}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconduc…
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TiO$_{2-δ}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-δ}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.
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Submitted 17 April, 2007;
originally announced April 2007.
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Quantum-classical phase transition of escape rate in biaxial spin system with an arbitrarily directed magnetic field
Authors:
Chang-Soo Park,
Sahng-Kyoon Yoo,
Dal-Ho Yoon
Abstract:
We investigate the escape rate of a biaxial spin particle with an arbitrarily dierected magnetic field in the easy plane, described by Hamiltonian ${\cal H} = -AS_z^2 - BS_x^2 -H_x S_x -H_z S_z, (A>B>0)$. We derive an effective particle potential by using the method of particle mapping. With the help of the criterion for the presence of a first-order quantum-classical transition of the escape ra…
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We investigate the escape rate of a biaxial spin particle with an arbitrarily dierected magnetic field in the easy plane, described by Hamiltonian ${\cal H} = -AS_z^2 - BS_x^2 -H_x S_x -H_z S_z, (A>B>0)$. We derive an effective particle potential by using the method of particle mapping. With the help of the criterion for the presence of a first-order quantum-classical transition of the escape rate we obtained various phase boundary curves depending on the anisotropy parameter $b \equiv B/A$ and the field parameters $α_{x,z} \equiv H_{x,z}/AS$ : $α_{zc}(b_c)'s, α_{xc}(b_c)'s$, and $α_{zc} = α_{zc}(α_{xc})$. It is found from $α_{zc}(b_c)'s$ and $α_{xc}(b_c)'s$ that the-first-order region decreases as $b$ and $α_x $ (or $α_z$) increase. The phase boundary line $α_{zc} = α_{zc}(α_{xc}) shows that compared with the uniaxial system, both the first- and second-oredr regions are diminished due to the transverse anisotropy. Moreover, it is observed that, in the limit $α_{xc} \to 0$, $α_{zc}$ does not coinsides with the coercive field line, which yields more reduction in the first-order region. We have also computed the crossover temperatures at the phase boundary :$T_c(b_c), T_c(α_{xc}, α_{zc})$.
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Submitted 15 September, 1999;
originally announced September 1999.
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Oscillation of the tunnel splitting in nanospin systems within the particle mapping formalism
Authors:
Sahng-Kyoon Yoo,
Soo-Young Lee,
Dal-Ho Yoon,
Chang-Soo Park
Abstract:
The oscillation of tunnel splitting in the biaxial spin system within magnetic field along the anisotropy axis is analyzed within the particle mapping approach, rather than in the (θ-φ) spin coherent-state representation. In our mapping procedure, the spin system is transformed into a particle moving in the restricted $S^1$ geometry whose wave function subjects to the boundary condition involvin…
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The oscillation of tunnel splitting in the biaxial spin system within magnetic field along the anisotropy axis is analyzed within the particle mapping approach, rather than in the (θ-φ) spin coherent-state representation. In our mapping procedure, the spin system is transformed into a particle moving in the restricted $S^1$ geometry whose wave function subjects to the boundary condition involving additional phase shift. We obtain the new topological phase that plays the same role as the Wess-Zumino action in spin coherent-state representation. Considering the interference of two possible trajectories, instanton and anti-instanton, we get the identical condition for the field at which tunneling is quenched, with the previous result within spin coherent-state representation.
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Submitted 19 September, 1999; v1 submitted 14 September, 1999;
originally announced September 1999.
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Escape rate of a biaxial nanospin system in a magnetic field : first- and second-order transition between quantum and classical regimes
Authors:
ChangSoo Park,
Sahng-Kyoon Yoo,
D. K. Park,
Dal-Ho Yoon
Abstract:
We investigate the escape rate of the biaxial nanospin particle with a magnetic field applied along the easy axis. The model studied here is described by the Hamiltonian ${\cal H} = -AS_z^2 - BS_x^2 - HS_z, (A>B>0)$. By reducing this Hamiltonian to a particle one, we derive, for the first time, an effective particle potential for this model and find an analytical form of the phase boundary line…
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We investigate the escape rate of the biaxial nanospin particle with a magnetic field applied along the easy axis. The model studied here is described by the Hamiltonian ${\cal H} = -AS_z^2 - BS_x^2 - HS_z, (A>B>0)$. By reducing this Hamiltonian to a particle one, we derive, for the first time, an effective particle potential for this model and find an analytical form of the phase boundary line between first- and second-order transitions, from which a complete phase diagram can be obtained. We also derive an analytical form of the crossover temperature as a function of the applied field at the phase boundary.
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Submitted 3 February, 1999;
originally announced February 1999.
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Escape rate of the nanospin system in a magnetic field: the first-order phase transition within quantum regime
Authors:
Chang Soo Park,
Sahng-Kyoon Yoo,
D. K. Park,
Dal-Ho Yoon
Abstract:
We have investigated the escape rate of the nanospin particle with a magnetic field applied along the easy axis. The model studied here is described by the Hamiltonian $\hat{\cal H} = K_1 \hat{S}_z^2 + K_2 \hat{S}_y^2 + gμ_b H \hat{S}_x $, $(K_1 > K_2 > 0)$ from which the escape rate is calculated within the semiclassical approximation. We have obtained a diagram for the orders of the phase tran…
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We have investigated the escape rate of the nanospin particle with a magnetic field applied along the easy axis. The model studied here is described by the Hamiltonian $\hat{\cal H} = K_1 \hat{S}_z^2 + K_2 \hat{S}_y^2 + gμ_b H \hat{S}_x $, $(K_1 > K_2 > 0)$ from which the escape rate is calculated within the semiclassical approximation. We have obtained a diagram for the orders of the phase transitions depending on the anisotropy constant and the external field. For $ K_2 / K_1 > 0.85$ the present model reveals, for the first time, the existence of the first-order transition within the quantum regime.
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Submitted 26 July, 1998;
originally announced July 1998.
