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Confinement of long-lived interlayer excitons in WS$_2$/WSe$_2$ heterostructures
Authors:
Alejandro R. -P. Montblanch,
Dhiren M. Kara,
Ioannis Paradisanos,
Carola M. Purser,
Matthew S. G. Feuer,
Evgeny M. Alexeev,
Lucio Stefan,
Ying Qin,
Mark Blei,
Gang Wang,
Alisson R. Cadore,
Pawel Latawiec,
Marko Lončar,
Sefaattin Tongay,
Andrea C. Ferrari,
Mete Atatüre
Abstract:
Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a str…
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Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a strongly confining trap array using a WS$_{2}$/WSe$_{2}$ heterostructure on a nanopatterned substrate. We detect long-lived interlayer excitons with lifetime approaching 0.2 ms and show that their confinement results in a reduced lifetime in the microsecond range and stronger emission rate with sustained optical selection rules. The combination of a permanent dipole moment, spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for observing long-range dynamics in an optically resolvable trap lattice.
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Submitted 5 May, 2020;
originally announced May 2020.
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Large-scale quantum-emitter arrays in atomically thin semiconductors
Authors:
Carmen Palacios-Berraquero,
Dhiren M. Kara,
Alejandro R. -P. Montblanch,
Matteo Barbone,
Pawel Latawiec,
Duhee Yoon,
Anna K. Ott,
Marko Loncar,
Andrea C. Ferrari,
Mete Atature
Abstract:
The flourishing field of two-dimensional (2D) nanophotonics has generated much excitement in the quantum technologies community after the identification of quantum emitters (QEs) in layered materials (LMs). LMs offer many advantages as platforms for quantum circuits, such as integration within hybrid technologies, valley degree of freedom and strong spin-orbit coupling. QEs in LMs, however, suffer…
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The flourishing field of two-dimensional (2D) nanophotonics has generated much excitement in the quantum technologies community after the identification of quantum emitters (QEs) in layered materials (LMs). LMs offer many advantages as platforms for quantum circuits, such as integration within hybrid technologies, valley degree of freedom and strong spin-orbit coupling. QEs in LMs, however, suffer from uncontrolled occurrences, added to the uncertainty over their origin, which has been linked to defects and strain gradients. Here, we report a scalable method to create arrays of single-photon emitting QEs in tungsten diselenide (WSe2) and tungsten disulphide (WS2) using a nanopatterned silica substrate. We obtain devices with QE numbers in the range of hundreds, limited only by the flake size, and a QE yield approaching unity. The overall quality of these deterministic QEs surpasses that of their randomly appearing counterparts, with spectral wanderings of around 0.1 meV, an order of magnitude lower than previous reports. Our technique solves the scalability challenge for LM-based quantum photonic devices.
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Submitted 14 September, 2016;
originally announced September 2016.
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Faraday cage angled-etching of nanostructures in bulk dielectrics
Authors:
Pawel Latawiec,
Michael J. Burek,
Young-Ik Sohn,
Marko Lončar
Abstract:
For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the ne…
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For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in-situ device release and isolation through an angled-etching process. By placing a Faraday cage around the sample during inductively-coupled plasma reactive ion etching (ICP-RIE), the etching plasma develops an equipotential at the cage surface, directing ions normal to its face. In this Article, the effects Faraday cage angle, mesh size, and sample placement have on etch angle, uniformity, and mask selectivity are investigated within a silicon etching platform. Simulation results qualitatively confirm experiments and help to clarify the physical mechanisms at work. These results will help guide FCAE process design across a wide range of material platforms.
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Submitted 11 March, 2016;
originally announced March 2016.
