Showing 1–50 of 50 results for author: Cheong, H

Direct Observation and Analysis of Low-Energy Magnons with Raman Spectroscopy in Atomically Thin NiPS3

Authors: Woongki Na, Pyeongjae Park, Siwon Oh, Junghyun Kim, Allen Scheie, David Alan Tennant, Hyun Cheol Lee, Je-Geun Park, Hyeonsik Cheong

Abstract: Van der Waals (vdW) magnets have rapidly emerged as a fertile playground for novel fundamental physics and exciting applications. Despite the impressive developments over the past few years, technical limitations pose a severe challenge to many other potential breakthroughs. High on the list is the lack of suitable experimental tools for studying spin dynamics on atomically thin samples. Here, Ram… ▽ More Van der Waals (vdW) magnets have rapidly emerged as a fertile playground for novel fundamental physics and exciting applications. Despite the impressive developments over the past few years, technical limitations pose a severe challenge to many other potential breakthroughs. High on the list is the lack of suitable experimental tools for studying spin dynamics on atomically thin samples. Here, Raman scattering techniques are employed to observe directly the low-lying magnon (~1 meV) even in bilayer NiPS3. The unique advantage is that it offers excellent energy resolutions far better on low-energy sides than most inelastic neutron spectrometers can offer. More importantly, with appropriate theoretical analysis, the polarization dependence of the Raman scattering by those low-lying magnons also provides otherwise hidden information on the dominant spin-exchange scattering paths for different magnons. By comparing with high-resolution inelastic neutron scattering data, these low-energy Raman modes are confirmed to be indeed of magnon origin. Because of the different scattering mechanisms involved in inelastic neutron and Raman scattering, this new information is fundamental in pinning down the final spin Hamiltonian. This work demonstrates the capability of Raman spectroscopy to probe the genuine two-dimensional spin dynamics in atomically-thin vdW magnets, which can provide novel insights that are obscured in bulk spin dynamics. △ Less

Submitted 29 July, 2024; originally announced July 2024.

Comments: 37 pages, 5 figures, supplementary information 11 pages

Imaging thermally fluctuating Nèel vectors in van der Waals antiferromagnet NiPS3

Authors: Youjin Lee, Chaebin Kim, Suhan Son, Jingyuan Cui, Giung Park, Kai-Xuan Zhang, Siwon Oh, Hyeonsik Cheong, Armin Kleibert, Je-Geun Park

Abstract: Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite its importance, few systematic studies have been performed on van der Waals (vdW) antiferromagnets (AFMs) domains with high spatial resolutions, and direct probing of the Nèel vectors remains challenging. In this work, we found a multidomain in vdW AFM NiPS3, a material extensive… ▽ More Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite its importance, few systematic studies have been performed on van der Waals (vdW) antiferromagnets (AFMs) domains with high spatial resolutions, and direct probing of the Nèel vectors remains challenging. In this work, we found a multidomain in vdW AFM NiPS3, a material extensively investigated for its exotic magnetic exciton. We employed photoemission electron microscopy combined with the X-ray magnetic linear dichroism (XMLD-PEEM) to image the NiPS3's magnetic structure. The nanometer-spatial resolution of XMLD-PEEM allows us to determine local Nèel vector orientations and discover thermally fluctuating Néel vectors that are independent of the crystal symmetry even at 65 K, well below TN of 155 K. We demonstrate a Ni ions' small in-plane orbital moment anisotropy is responsible for the weak magneto-crystalline anisotropy. The observed multidomain's thermal fluctuations may explain the broadening of magnetic exciton peaks at higher temperatures. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Rapid suppression of quantum many-body magnetic exciton in doped van der Waals antiferromagnet (Ni,Cd)PS3

Authors: Junghyun Kim, Woongki Na, Jonghyeon Kim, Pyeongjae Park, Kaixuan Zhang, Inho Hwang, Young-Woo Son, Jae Hoon Kim, Hyeonsik Cheong, Je-Geun Park

Abstract: The unique discovery of magnetic exciton in van der Waals antiferromagnet NiPS3 arises between two quantum many-body states of a Zhang-Rice singlet excited state and a Zhang-Rice triplet ground state. Simultaneously, the spectral width of photoluminescence originating from this exciton is exceedingly narrow as 0.4 meV. These extraordinary properties, including the extreme coherence of the magnetic… ▽ More The unique discovery of magnetic exciton in van der Waals antiferromagnet NiPS3 arises between two quantum many-body states of a Zhang-Rice singlet excited state and a Zhang-Rice triplet ground state. Simultaneously, the spectral width of photoluminescence originating from this exciton is exceedingly narrow as 0.4 meV. These extraordinary properties, including the extreme coherence of the magnetic exciton in NiPS3, beg many questions. We studied doping effects using Ni1-xCdxPS3 using two experimental techniques and theoretical studies. Our experimental results show that the magnetic exciton is drastically suppressed upon a few % Cd doping. All these happen while the width of the exciton only gradually increases, and the antiferromagnetic ground state is robust. These results highlight the lattice uniformity's hidden importance as a prerequisite for coherent magnetic exciton. Finally, an exciting scenario emerges: the broken charge transfer forbids the otherwise uniform formation of the coherent magnetic exciton in (Ni,Cd)PS3. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 40 pages, 4 main figures, 13 supporting figures, accepted by Nano Letters

Type-II Red Phosphorus: Wavy Packing of Twisted Pentagonal Tubes

Authors: Jun-Yeong Yoon, Yangjin Lee, Dong-Gyu Kim, Dong Gun Oh, Jin Kyun Kim, Linshuo Guo, Jungcheol Kim, Jeongheon Choe, Kihyun Lee, Hyeonsik Cheong, Chae Un Kim, Young Jai Choi, Yanhang Ma, Kwanpyo Kim

Abstract: Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining… ▽ More Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining state-of-the-art structural characterization techniques. Electron diffraction tomography, atomic-resolution scanning transmission electron microscopy (STEM), powder X-ray diffraction, and Raman spectroscopy were concurrently used to elucidate the hidden structural motifs and their packing in type-II RP. Electron diffraction tomography, performed using individual crystalline nanowires, was used to identify a triclinic unit cell with volume of 5330 Å^3, the largest unit cell for elemental phosphorus crystals up to now, which contains approximately 250 phosphorus atoms. Atomic-resolution STEM imaging, which was performed along different crystal-zone axes, confirmed that the twisted wavy tubular motif is the basic building block of type-II RP. Our study discovered and presented a new variation of building blocks in phosphorus, and it provides insights to clarify the complexities observed in phosphorus as well as other relevant systems. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 16 pages, 5 figures, 1 table

Journal ref: Angew. Chem. Int. Ed. e202307102 (2023)

Self-organized vortex phases and hydrodynamic interactions in Bos taurus sperm cells

Authors: Charles R. Packard, Shobitha Unnikrishnan, Shiva Phuyal, Soon Hon Cheong, M. Lisa Manning, Chih-Kuan Tung, Daniel M. Sussman

Abstract: Flocking behavior is observed in biological systems from the cellular to super-organismal length scales, and the mechanisms and purposes of this behavior are objects of intense interest. In this paper, we study the collective dynamics of bovine sperm cells in a viscoelastic fluid. These cells appear not to spontaneously flock, but transition into a long-lived flocking phase after being exposed to… ▽ More Flocking behavior is observed in biological systems from the cellular to super-organismal length scales, and the mechanisms and purposes of this behavior are objects of intense interest. In this paper, we study the collective dynamics of bovine sperm cells in a viscoelastic fluid. These cells appear not to spontaneously flock, but transition into a long-lived flocking phase after being exposed to a transient ordering pulse of fluid flow. Surprisingly, this induced flocking phase has many qualitative similarities with the spontaneous polar flocking phases predicted by Toner-Tu theory, such as anisotropic giant number fluctuations and non-trivial transverse density correlations, despite the induced nature of the phase and the clearly important role of momentum conservation between the swimmers and the surrounding fluid in these experiments. We also find self-organized global vortex state of the sperm cells, and map out an experimental phase diagram of states of collective motion as a function of cell density and motility statistics. We compare our experiments with a parameter-matched computational model of persistently turning active particles, and find that the experimental order-disorder phase boundary as a function of cell density and persistence time can be approximately predicted from measures of single-cell properties. Our results may have implications for the evaluation of sample fertility by studying the collective phase behavior of dense groups of swimming sperm. △ Less

Submitted 23 May, 2024; v1 submitted 5 March, 2023; originally announced March 2023.

Comments: Version 2: 11 pages, 9 figures, even more data than before

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Authors: Chia-Hao Lee, Huije Ryu, Gillian Nolan, Yichao Zhang, Yangjin Lee, Siwon Oh, Hyeonsik Cheong, Kenji Watanabe, Takashi Taniguchi, Kwanpyo Kim, Gwan-Hyoung Lee, Pinshane Y. Huang

Abstract: Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-Td interfaces with laser irradiation and probe their phase transitions from micro- to… ▽ More Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-Td interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe2 with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the Td-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 degree C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-Td-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D hetero-phase devices with atomically sharp and coherent interfaces. △ Less

Submitted 6 January, 2023; originally announced January 2023.

Comments: 38 pages, 5 figures, 9 supplementary figures, and supplementary information

Giant magnetic anisotropy in the atomically thin van der Waals antiferromagnet FePS3

Authors: Youjin Lee, Suhan Son, Chaebin Kim, Soonmin Kang, Junying Shen, Michel Kenzelmann, Bernard Delley, Tatiana Savchenko, Sergii Parchenko, Woongki Na, Ki-Young Choi, Wondong Kim, Hyeonsik Cheong, Peter M. Derlet, Armin Kleibert, Je-Geun Park

Abstract: Van der Waals (vdW) magnets are an ideal platform for tailoring two-dimensional (2D) magnetism with immense potential for spintronics applications and are intensively investigated. However, little is known about the microscopic origin of magnetic order in these antiferromagnetic systems. We used X-ray photoemission electron microscopy to address the electronic and magnetic properties of the vdW an… ▽ More Van der Waals (vdW) magnets are an ideal platform for tailoring two-dimensional (2D) magnetism with immense potential for spintronics applications and are intensively investigated. However, little is known about the microscopic origin of magnetic order in these antiferromagnetic systems. We used X-ray photoemission electron microscopy to address the electronic and magnetic properties of the vdW antiferromagnet FePS3 down to the monolayer. Our experiments reveal a giant out-of-plane magnetic anisotropy of 22 meV per Fe ion, accompanied by unquenched magnetic orbital moments. Moreover, our calculations suggest that the Ising magnetism in FePS3 is a visible manifestation of spin-orbit entanglement of the Fe 3d electron system. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Multiferroic-enabled magnetic exciton in 2D quantum entangled van der Waals antiferromagnet NiI2

Authors: Suhan Son, Youjin Lee, Jae Ha Kim, Beom Hyun Kim, Chaebin Kim, Woongki Na, Hwiin Ju, Sudong Park, Abhishek Nag, Ke-Jin Zhou, Young-Woo Son, Hyeongdo Kim, Woo-Suk Noh, Jae-Hoon Park, Jong Seok Lee, Hyeonsik Cheong, Jae Hoon Kim, Je-Geun Park

Abstract: Matter-light interaction is at the center of diverse research fields from quantum optics to condensed matter physics, opening new fields like laser physics. A magnetic exciton is one such rare example found in magnetic insulators. However, it is relatively rare to observe that external variables control matter-light interaction. Here, we report that the broken inversion symmetry of multiferroicity… ▽ More Matter-light interaction is at the center of diverse research fields from quantum optics to condensed matter physics, opening new fields like laser physics. A magnetic exciton is one such rare example found in magnetic insulators. However, it is relatively rare to observe that external variables control matter-light interaction. Here, we report that the broken inversion symmetry of multiferroicity can act as an external knob enabling the magnetic exciton in van der Waals antiferromagnet NiI2. We further discover that this magnetic exciton arises from a transition between Zhang-Rice-triplet and Zhang-Rice-singlet's fundamentally quantum entangled states. This quantum entanglement produces an ultra-sharp optical exciton peak at 1.384 eV with a 5 meV linewidth. Our work demonstrates that NiI2 is two-dimensional magnetically ordered with an intrinsically quantum entangled ground state. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Comments: 26 pages, 10 figures. Accepted for publication in Advanced Materials

γ-GeSe:a new hexagonal polymorph from group IV-VI monochalcogenides

Authors: Sol Lee, Joong-Eon Jung, Han-gyu Kim, Yangjin Lee, Je Myoung Park, Jeongsu Jang, Sangho Yoon, Arnab Ghosh, Minseol Kim, Joonho Kim, Woongki Na, Jonghwan Kim, Hyoung Joon Choi, Hyeonsik Cheong, Kwanpyo Kim

Abstract: The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so… ▽ More The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called γ-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized γ-GeSe exhibits high electrical conductivity of 3x10^5 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, γ-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating γ-GeSe. The newly identified crystal symmetry of γ-GeSe warrants further studies on various physical properties of γ-GeSe. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Comments: 24 pages, 5 figures

Journal ref: Nano Letters, 2021

Ultrafast carrier-lattice interactions and interlayer modulations of Bi2Se3 by X-ray free electron laser diffraction

Authors: Sungwon Kim, Youngsam Kim, Jaeseung Kim, Sungwook Choi, Kyuseok Yun, Dongjin Kim, Soo Yeon Lim, Sunam Kim, Sae Hwan Chun, Jaeku Park, Intae Eom, Kyung Sook Kim, Tae-Yeong Koo, Yunbo Ou, Ferhat Katmis, Haidan Wen, Anthony Dichiara, Donald Walko, Eric C. Landahl, Hyeonsik Cheong, Eunji Sim, Jagadeesh Moodera, Hyunjung Kim

Abstract: As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the coupling with its topological phase. It is essential to measure with a time scale smaller than picoseconds for initial interaction. Here we use an X-ray free-electro… ▽ More As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the coupling with its topological phase. It is essential to measure with a time scale smaller than picoseconds for initial interaction. Here we use an X-ray free-electron laser to perform time-resolved diffraction to study ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory (DFT) and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insight into instantaneous topological phases on ultrafast timescales. △ Less

Submitted 22 March, 2021; originally announced March 2021.

Unidirectional Alignment of AgCN Microwires on Distorted Transition Metal Dichalcogenide Crystals

Authors: Myeongjin Jang, Hyeonhu Bae, Yangjin Lee, Woongki Na, Byungkyu Yu, Soyeon Choi, Hyeonsik Cheong, Hoonkyung Lee, Kwanpyo Kim

Abstract: Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable stud… ▽ More Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T' or Td) of TMDCs is largely lacking. Here we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T'-MoTe2, Td-WTe2, and 1T'-ReS2. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs. △ Less

Submitted 16 February, 2021; originally announced February 2021.

Comments: 23 pages, 6 main figures

Journal ref: ACS Appl. Mater. Interfaces, advanced online publication (2021)

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

Authors: Yeryun Cheon, Soo Yeon Lim, Kangwon Kim, Hyeonsik Cheong

Abstract: We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe2 samples and observed both 1T' and Td phases at room temperature. Few-layer 1T' and Td MoTe2 exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases.… ▽ More We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe2 samples and observed both 1T' and Td phases at room temperature. Few-layer 1T' and Td MoTe2 exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe2. In contrast to bulk 1T' MoTe2 crystals where the phase transition to the Td phase occurs at ~250 K, the temperature-driven phase transition to the Td phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor Td phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies. △ Less

Submitted 22 January, 2021; originally announced January 2021.

Comments: 58 pages (32 pages of main text, 26 pages of Supporting Information), to be published in ACS Nano

Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3

Authors: Soo Yeon Lim, Kangwon Kim, Sungmin Lee, Je-Geun Park, Hyeonsik Cheong

Abstract: The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few-layer thickness is an important fundamental issue for the understanding of the magnetic ordering in lower dimensions. The antiferromagnetic transition temperature TN of the Heisenberg-type 2D magnetic vdW material MnPS3 was estimated as a function of the number of layers. The antiferromagne… ▽ More The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few-layer thickness is an important fundamental issue for the understanding of the magnetic ordering in lower dimensions. The antiferromagnetic transition temperature TN of the Heisenberg-type 2D magnetic vdW material MnPS3 was estimated as a function of the number of layers. The antiferromagnetic transition was identified by temperature-dependent Raman spectroscopy, from the broadening of a phonon peak at 155 cm-1, accompanied by an abrupt redshift and an increase of its spectral weight. TN is found to decrease only slightly from ~78 K for bulk to ~ 66 K for 3L. The small reduction of TN in thin MnPS3 approaching the 2D limit implies that the interlayer vdW interaction is playing an important role in stabilizing magnetic ordering in layered magnetic materials. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Polytypism in Few-Layer Gallium Selenide

Authors: Soo Yeon Lim, Jae-Ung Lee, Jung Hwa Kim, Liangbo Liang, Xiangru Kong, Thi Thanh Huong Nguyen, Zonghoon Lee, Sunglae Cho, Hyeonsik Cheong

Abstract: Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different op… ▽ More Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even for the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurement on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even for the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences for trilayer GaSe. We further found that the AB-type stacking is more stable than the AA'-type stacking in GaSe. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Journal ref: Nanoscale, 2020,12, 8563-8573

Optical phonons of SnSe(1-x)Sx layered semiconductor alloys

Authors: Tharith Sriv, Thi Minh Hai Nguyen, Yangjin Lee, Soo Yeon Lim, Van Quang Nguyen, Kwanpyo Kim, Sunglae Cho, Hyeonsik Cheong

Abstract: The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic or… ▽ More The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior. △ Less

Submitted 18 July, 2020; originally announced July 2020.

Comments: X

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe$_{2}$

Authors: B. K. Choi, S. Ulstrup, S. M. Gunasekera, J. Kim, S. Y. Lim, L. Moreschini, J. S. Oh, S. -H. Chun, C. Jozwiak, A. Bostwick, E. Rotenberg, H. Cheong, I. -W. Lyo, M. Mucha-Kruczynski, Y. J. Chang

Abstract: Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemissio… ▽ More Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe$_{2}$, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe$_{2}$, in contrast to the 2H materials, the out-of-plane transition metal $d_{z^{2}}$ and chalcogen $p_{z}$ orbitals do not contribute significantly to the top of the valence band which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe$_{2}$ using scanning tunneling spectroscopy and explore the implications on the gap following surface-doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe$_{2}$. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place amongst two-dimensional crystals. △ Less

Submitted 29 May, 2020; originally announced May 2020.

Comments: 37 pages (including Supporting Information), 7 figures in the main text

Journal ref: ACS Nano 14, 7880 (2020)

Bargaining with entropy and energy

Authors: S. G. Babajanyan, K. H. Cheong, A. E. Allahverdyan

Abstract: Statistical mechanics is based on interplay between energy minimization and entropy maximization. Here we formalize this interplay via axioms of cooperative game theory (Nash bargaining) and apply it out of equilibrium. These axioms capture basic notions related to joint maximization of entropy and minus energy, formally represented by utilities of two different players. We predict thermalization… ▽ More Statistical mechanics is based on interplay between energy minimization and entropy maximization. Here we formalize this interplay via axioms of cooperative game theory (Nash bargaining) and apply it out of equilibrium. These axioms capture basic notions related to joint maximization of entropy and minus energy, formally represented by utilities of two different players. We predict thermalization of a non-equilibrium statistical system employing the axiom of affine covariance|related to the freedom of changing initial points and dimensions for entropy and energy|together with the contraction invariance of the entropy-energy diagram. Whenever the initial non-equilibrium state is active, this mechanism allows thermalization to negative temperatures. Demanding a symmetry between players fixes the final state to a specific positive-temperature (equilibrium) state. The approach solves an important open problem in the maximum entropy inference principle, {\it viz.} generalizes it to the case when the constraint is not known precisely. △ Less

Submitted 15 October, 2019; originally announced October 2019.

Comments: 4+6 pages, 5 figures, 1 table

Journal ref: Phys. Rev. Research 2, 043055 (2020)

Ultrabroadband Density of States of Amorphous In-Ga-Zn-O

Authors: Kyle T. Vogt, Christopher E. Malmberg, Jacob C. Buchanan, George W. Mattson, G. Mirek Brandt, Dylan B. Fast, Paul H. -Y. Cheong, John F. Wager, Matt W. Graham

Abstract: The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both… ▽ More The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of $10^{17}-10^{18}$ cm$^{-3}$eV$^{-1}$. Two deep acceptor-like metal vacancy peaks with peak densities in the range of $10^{18}$ cm$^{-3}$eV$^{-1}$ and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the $a$-IGZO TFT threshold voltage to more positive values. Photoionization (h$ν$ > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in $a$-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies. △ Less

Submitted 3 July, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 31 pages, 5 figures, supplementary section included

Journal ref: Phys. Rev. Research 2, 033358 (2020)

Passive network evolution promotes group welfare in complex networks

Authors: Ye Ye, Xiao Rong Hang, Jin Ming Koh, Jarosław Adam Miszczak, Kang Hao Cheong, Neng-gang Xie

Abstract: The Parrondo's paradox is a counterintuitive phenomenon in which individually losing strategies, canonically termed game A and game B, are combined to produce winning outcomes. In this paper, a co-evolution of game dynamics and network structure is adopted to study adaptability and survivability in multi-agent dynamics. The model includes action A, representing a rewiring process on the network, a… ▽ More The Parrondo's paradox is a counterintuitive phenomenon in which individually losing strategies, canonically termed game A and game B, are combined to produce winning outcomes. In this paper, a co-evolution of game dynamics and network structure is adopted to study adaptability and survivability in multi-agent dynamics. The model includes action A, representing a rewiring process on the network, and a two-branch game B, representing redistributive interactions between agents. Simulation results indicate that stochastically mixing action A and game B can produce enhanced, and even winning outcomes, despite gameB being individually losing. In other words, a Parrondo-type paradox can be achieved, but unlike canonical variants, the source of agitation is provided by passive network evolution instead of an active second game. The underlying paradoxical mechanism is analyzed, revealing that the rewiring process drives a topology shift from initial regular lattices towards scale-free characteristics, and enables exploitative behavior that grants enhanced access to the favourable branch of game B. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 15 pages, 9 figures

Journal ref: Chaos, Solitons & Fractals, Vol. 130, pp. 109464 (2020)

Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy

Authors: Yun Choi, Keunui Kim, Soo Yeon Lim, Jungcheol Kim, Je Myoung Park, Jung Hwa Kim, Zonghoon Lee, Hyeonsik Cheong

Abstract: Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X=S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientat… ▽ More Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X=S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine the all three principal directions of few-layer ReX2 including a way to distinguish the two types of faces: a 2.41-eV laser for ReS2 or a 1.96-eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm-1 (124 and 161 cm-1) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously. △ Less

Submitted 25 September, 2019; originally announced September 2019.

Comments: 22 pages, 4 figures, supplementary information 9 pages

Antiferromagnetic ordering in van der Waals two-dimensional magnetic material MnPS3 probed by Raman spectroscopy

Authors: Kangwon Kim, Soo Yeon Lim, Jungcheol Kim, Jae-Ung Lee, Sungmin Lee, Pilkwang Kim, Kisoo Park, Suhan Son, Cheol-Hwan Park, Je-Geun Park, Hyeonsik Cheong

Abstract: Magnetic ordering in the two-dimensional limit has been one of the most important issues in condensed matter physics for the past several decades. The recent discovery of new magnetic van der Waals materials heralds a much-needed easy route for the studies of two-dimensional magnetism: the thickness dependence of the magnetic ordering has been examined by using Ising- and XXZ-type magnetic van der… ▽ More Magnetic ordering in the two-dimensional limit has been one of the most important issues in condensed matter physics for the past several decades. The recent discovery of new magnetic van der Waals materials heralds a much-needed easy route for the studies of two-dimensional magnetism: the thickness dependence of the magnetic ordering has been examined by using Ising- and XXZ-type magnetic van der Waals materials. Here, we investigated the magnetic ordering of MnPS3, a two-dimensional antiferromagnetic material of Heisenberg-type, by Raman spectroscopy from bulk all the way down to bilayer. The phonon modes that involve the vibrations of Mn ions exhibit characteristic changes as the temperature gets lowered through the Néel temperature. In bulk MnPS3, the Raman peak at ~155 cm-1 becomes considerably broadened near the Néel temperature and upon further cooling is subsequently red-shifted. The measured peak positions and polarization dependences of the Raman spectra are in excellent agreement with our first-principles calculations. In few-layer MnPS3, the peak at ~155 cm-1 exhibits the characteristic red-shift at low temperatures down to the bilayer, indicating that the magnetic ordering is surprisingly stable at such a thin limit. Our work sheds light on the hitherto unexplored magnetic ordering in the Heisenberg-type antiferromagnetic systems in the atomic-layer limit. △ Less

Submitted 9 June, 2019; originally announced June 2019.

Comments: 22 pages, 3 figures, supplementary information 21 pages

Suppression of magnetic ordering in XXZ-type antiferromagnetic monolayer NiPS3

Authors: Kangwon Kim, Soo Yeon Lim, Jae-Ung Lee, Sungmin Lee, Tae Yun Kim, Kisoo Park, Gun Sang Jeon, Cheol-Hwan Park, Je-Geun Park, Hyeonsik Cheong

Abstract: How a certain ground state of complex physical systems emerges, especially in two-dimensional materials, is a fundamental question in condensed-matter physics. A particularly interesting case is systems belonging to the class of XY Hamiltonian where the magnetic order parameter of conventional nature is unstable in two-dimensional materials leading to a Berezinskii-Kosterlitz-Thouless transition.… ▽ More How a certain ground state of complex physical systems emerges, especially in two-dimensional materials, is a fundamental question in condensed-matter physics. A particularly interesting case is systems belonging to the class of XY Hamiltonian where the magnetic order parameter of conventional nature is unstable in two-dimensional materials leading to a Berezinskii-Kosterlitz-Thouless transition. Here, we report how the XXZ-type antiferromagnetic order of a magnetic van der Waals material, NiPS3, behaves upon reducing the thickness and ultimately becomes unstable in the monolayer limit. Our experimental data are consistent with the findings based on renormalization group theory that at low temperatures a two-dimensional XXZ system behaves like a two-dimensional XY one, which cannot have a long-range order at finite temperatures. This work provides experimental examination of the XY magnetism in the atomically thin limit and opens new opportunities of exploiting these fundamental theorems of magnetism using magnetic van der Waals materials. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 57 pages, 24 figures (including Supplementary Information)

Journal ref: Nature Communications volume 10, Article number: 345 (2019)

Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2

Authors: Tharith Sriv, Kangwon Kim, Hyeonsik Cheong

Abstract: We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. Raman measurements were performed using laser wavelength of 441.6, 514.4, 532 and 632.8 nm with power below 100 uW and inside a vacuum chamber to avoid photo-oxidation. The intralayer Eg and A1g modes are observed at ~206 cm-1 and ~314 cm-1,… ▽ More We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. Raman measurements were performed using laser wavelength of 441.6, 514.4, 532 and 632.8 nm with power below 100 uW and inside a vacuum chamber to avoid photo-oxidation. The intralayer Eg and A1g modes are observed at ~206 cm-1 and ~314 cm-1, respectively, but the Eg mode is much weaker for all excitation energies. The A1g mode exhibits strong resonant enhancement for the 532 nm (2.33 eV) laser. In the low-frequency region, interlayer vibrational modes of shear and breathing modes are observed. These modes show characteristic dependence on the number of layers. The strengths of the interlayer interactions are estimated by fitting the interlayer mode frequencies using the linear chain model and are found to be 1.64 x10^19 N.m-3 and 5.03 x10^19 N.m-3 for the shear and breathing modes, respectively. △ Less

Submitted 13 July, 2018; v1 submitted 5 July, 2018; originally announced July 2018.

Variation of photoluminescence spectral line shape of monolayer WS2

Authors: Yongjae Kwon, Kangwon Kim, Wontaek Kim, Sunmin Ryu, Hyeonsik Cheong

Abstract: The origin of the variation of photoluminescence (PL) spectra of monolayer tungsten disulfide (WS2) is investigated systematically. Dependence of the PL spectrum on the excitation power show that the relatively sharp component corresponds to excitons whereas the broader component at slightly lower energy corresponds to negatively charged trions. PL imaging and second harmonic generation measuremen… ▽ More The origin of the variation of photoluminescence (PL) spectra of monolayer tungsten disulfide (WS2) is investigated systematically. Dependence of the PL spectrum on the excitation power show that the relatively sharp component corresponds to excitons whereas the broader component at slightly lower energy corresponds to negatively charged trions. PL imaging and second harmonic generation measurements show that the trion signals are suppressed more than the exciton signals near the edges, thereby relatively enhancing the excitonic feature in the PL spectrum and that such relative enhancement of the exciton signals is more pronounced near approximately armchair edges. This effect is interpreted in terms of depletion of free electrons near the edges caused by structural defects and adsorption of electron acceptors such as oxygen atoms. △ Less

Submitted 30 May, 2018; originally announced May 2018.

Comments: 13 pages, 4 figures

Journal ref: Curr. Appl. Phys. 18 (2018) 941-945

Strain-shear coupling in bilayer MoS2

Authors: Jae-Ung Lee, Sungjong Woo, Jaesung Park, Hee Chul Park, Young-Woo Son, Hyeonsik Cheong

Abstract: Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic mechanical properties owing to orders of magnitude difference between in-plane and out-of-plane interatomic interaction strengths. Although effects of mechanical perturbations on either intra- or inter-layer interactions have been extensively investigated, mutual correlations between them have rarely… ▽ More Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic mechanical properties owing to orders of magnitude difference between in-plane and out-of-plane interatomic interaction strengths. Although effects of mechanical perturbations on either intra- or inter-layer interactions have been extensively investigated, mutual correlations between them have rarely been addressed. Here we show that layered materials have an inevitable coupling between in-plane uniaxial strain and interlayer shear. Because of this, the uniaxial in-plane strain induces an anomalous splitting of the degenerate interlayer shear phonon modes such that the split shear mode along the tensile strain is not softened but hardened contrary to the case of intralayer phonon modes. We confirm the effect by measuring Raman shifts of shear modes of bilayer MoS2 under strain. Moreover, by analyzing the splitting, we obtain an unexplored off-diagonal elastic constant, demonstrating that Raman spectroscopy can determine almost all mechanical constants of layered materials. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: 36 pages, 10 figures

Journal ref: Nature Communications 8, 1370 (2017)

Bright visible light emission from graphene

Authors: Young Duck Kim, Hakseong Kim, Yujin Cho, Ji Hoon Ryoo, Cheol-Hwan Park, Pilkwang Kim, Yong Seung Kim, Sunwoo Lee, Yilei Li, Seung-Nam Park, Yong Shim Yoo, Duhee Yoon, Vincent E. Dorgan, Eric Pop, Tony F. Heinz, James Hone, Seung-Hyun Chun, Hyeonsik Cheong, Sang Wook Lee, Myung-Ho Bae, Yun Daniel Park

Abstract: Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficien… ▽ More Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficiency emitter in the mid-infrared range. However, emission in the visible range has remained elusive. Here we report the observation of bright visible-light emission from electrically biased suspended graphenes. In these devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K) become spatially localised at the centre of graphene layer, resulting in a 1000-fold enhancement in the thermal radiation efficiency. Moreover, strong optical interference between the suspended graphene and substrate can be utilized to tune the emission spectrum. We also demonstrate the scalability of this technique by realizing arrays of chemical-vapour-deposited graphene bright visible-light emitters. These results pave the way towards the realisation of commercially viable large-scale, atomically-thin, flexible and transparent light emitters and displays with low-operation voltage, and graphene-based, on-chip ultrafast optical communications. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Comments: 63 page

Journal ref: Nature Nanotechnology 2015

Excitonic Resonance Effects and Davydov Splitting in Circularly Polarized Raman Spectra of Few-Layer WSe2

Authors: Sanghun Kim, Kangwon Kim, Jae-Ung Lee, Hyeonsik Cheong

Abstract: Few-layer tungsten diselenide (WSe2) is investigated using circularly polarized Raman spectroscopy with up to eight excitation energies. The main E2g1 and A1g modes near 250 cm-1 appear as a single peak in the Raman spectrum taken without consideration of polarization but are resolved by using circularly polarized Raman scattering. The resonance behaviors of the E2g1 and A1g modes are examined. Fi… ▽ More Few-layer tungsten diselenide (WSe2) is investigated using circularly polarized Raman spectroscopy with up to eight excitation energies. The main E2g1 and A1g modes near 250 cm-1 appear as a single peak in the Raman spectrum taken without consideration of polarization but are resolved by using circularly polarized Raman scattering. The resonance behaviors of the E2g1 and A1g modes are examined. Firstly, both the E2g1 and A1g modes are enhanced near resonances with the exciton states. The A1g mode exhibits Davydov splitting for trilayers or thicker near some of the exciton resonances. The low-frequency Raman spectra show shear and breathing modes involving rigid vibrations of the layers and also exhibit strong dependence on the excitation energy. An unidentified peak at ~19 cm-1 that does not depend on the number of layers appears near resonance with the B exciton state at 1.96 eV (632.8 nm). The strengths of the intra- and inter-layer interactions are estimated by comparing the mode frequencies and Davydov splitting with the linear chain model, and the contribution of the next-nearest-neighbor interaction to the inter-layer interaction turns out to be about 34% of the nearest-neighbor interaction. Fano resonance is observed for 1.58-eV excitation, and its origin is found to be the interplay between two-phonon scattering and indirect band transition. △ Less

Submitted 31 July, 2017; originally announced August 2017.

Comments: 45 pages, 20 figures (including Supplementary Information)

Journal ref: 2D Materials, 4(4), 045002 (2017)

Excitation energy dependence of Raman spectra of few-layer WS2

Authors: Jinho Yang, Jae-Ung Lee, Hyeonsik Cheong

Abstract: Raman spectra of few-layer WS2 have been measured with up to seven excitation energies, and peculiar resonance effects are observed. The two-phonon acoustic phonon scattering signal close to the main E2g1 peak is stronger than the main peaks for excitations near the A or B exciton states. The low-frequency Raman spectra show a series of shear and layer-breathing modes that are useful for determini… ▽ More Raman spectra of few-layer WS2 have been measured with up to seven excitation energies, and peculiar resonance effects are observed. The two-phonon acoustic phonon scattering signal close to the main E2g1 peak is stronger than the main peaks for excitations near the A or B exciton states. The low-frequency Raman spectra show a series of shear and layer-breathing modes that are useful for determining the number of layers. In addition, hitherto unidentified peaks (X1 and X2), which do not seem to depend on the layer thickness, are observed near resonances with exciton states. The polarization dependences of the two peaks are different: X1 vanishes in cross polarization, but X2 does not. At the resonance with the A exciton state, the Raman-forbidden, lowest-frequency shear mode for odd number of layers appears as strong as that for the allowed case of even number of layers. This mode also exhibits a strong Breit-Wigner-Fano line shape and an anomalous polarization behavior at this resonance. △ Less

Submitted 6 June, 2017; originally announced June 2017.

Comments: 35 pages, 16 figures

Ising-Type Magnetic Ordering in Atomically Thin FePS3

Authors: Jae-Ung Lee, Sungmin Lee, Ji Hoon Ryoo, Soonmin Kang, Tae Yun Kim, Pilkwang Kim, Cheol-Hwan Park, Je-Geun Park, Hyeonsik Cheong

Abstract: Magnetism in two-dimensional materials is not only of fundamental scientific interest but also a promising candidate for numerous applications. However, studies so far, especially the experimental ones, have been mostly limited to the magnetism arising from defects, vacancies, edges or chemical dopants which are all extrinsic effects. Here, we report on the observation of intrinsic antiferromagnet… ▽ More Magnetism in two-dimensional materials is not only of fundamental scientific interest but also a promising candidate for numerous applications. However, studies so far, especially the experimental ones, have been mostly limited to the magnetism arising from defects, vacancies, edges or chemical dopants which are all extrinsic effects. Here, we report on the observation of intrinsic antiferromagnetic ordering in the two-dimensional limit. By monitoring the Raman peaks that arise from zone folding due to antiferromagnetic ordering at the transition temperature, we demonstrate that FePS3 exhibits an Ising-type antiferromagnetic ordering down to the monolayer limit, in good agreement with the Onsager solution for two-dimensional order-disorder transition. The transition temperature remains almost independent of the thickness from bulk to the monolayer limit with TN ~118 K, indicating that the weak interlayer interaction has little effect on the antiferromagnetic ordering. △ Less

Submitted 9 November, 2016; v1 submitted 14 August, 2016; originally announced August 2016.

Comments: 20 pages, 4 figures in manuscript and 22 pages, 18 figures in supporting information

Journal ref: Nano Letters, 16 (12), 7433-7438 (2016)

Davydov splitting and excitonic resonance effects in Raman spectra of few-Layer MoSe2

Authors: Kangwon Kim, Jae-Ung Lee, Dahyun Nam, Hyeonsik Cheong

Abstract: Raman spectra of few-layer MoSe2 were measured with 8 excitation energies. New peaks that appear only near resonance with various exciton states are analyzed, and the modes are assigned. The resonance profiles of the Raman peaks reflect the joint density of states for optical transitions, but the symmetry of the exciton wave functions leads to selective enhancement of the A1g mode at the A exciton… ▽ More Raman spectra of few-layer MoSe2 were measured with 8 excitation energies. New peaks that appear only near resonance with various exciton states are analyzed, and the modes are assigned. The resonance profiles of the Raman peaks reflect the joint density of states for optical transitions, but the symmetry of the exciton wave functions leads to selective enhancement of the A1g mode at the A exciton energy and the shear mode at the C exciton energy. We also find Davydov splitting of intra-layer A1g, E1g, and A2u modes due to inter-layer interaction for some excitation energies near resonances. Furthermore, by fitting the spectral positions of inter-layer shear and breathing modes and Davydov splitting of intra-layer modes to a linear chain model, we extract the strength of the inter-layer interaction. We find that the second-nearest-neighbor inter-layer interaction amounts to about 30% of the nearest-neighbor interaction for both in-plane and out-of-plane vibrations. △ Less

Submitted 13 August, 2016; originally announced August 2016.

Comments: 45 pages, 19 figures, ACS Nano published (2016)

Journal ref: ACS Nano 10(8), 8113-8120 (2016)

Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy

Authors: Minjung Kim, Songhee Han, Jung Hwa Kim, Jae-Ung Lee, Zonghoon Lee, Hyeonsik Cheong

Abstract: Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes rom semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and cry… ▽ More Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes rom semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and crystallographic orientation of few-layer WTe2. The Raman spectrum shows a pronounced dependence on the polarization of the excitation laser. We found that the separation between two Raman peaks at ~90 cm-1 and at 80-86 cm-1, depending on thickness, is a reliable fingerprint for determination of the thickness. For determination of the crystallographic orientation, the polarization dependence of the A1 modes, measured with the 632.8-nm excitation, turns out to be the most reliable. We also discovered that the polarization behaviors of some of the Raman peaks depend on the excitation wavelength as well as thickness, indicating a close interplay between the band structure and anisotropic Raman scattering cross section. △ Less

Submitted 12 August, 2016; originally announced August 2016.

Comments: 16 pages, 4 figures

Raman Signatures of Polytypism in Molybdenum Disulfide

Authors: Jae-Ung Lee, Kangwon Kim, Songhee Han, Gyeong Hee Ryu, Zonghoon Lee, Hyeonsik Cheong

Abstract: Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed sta… ▽ More Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using 3 different excitation energies which are non-resonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype whereas the high-frequency intra-layer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed which enable determination of the stacking order. △ Less

Submitted 18 January, 2016; originally announced January 2016.

Comments: 22 pages, 6 figures

Excitation energy dependent Raman spectrum of MoSe2

Authors: Dahyun Nam, Jae-Ung Lee, Hyeonsik Cheong

Abstract: Raman investigation of MoSe2 was carried out with eight different excitation energies. Seven peaks, including E1g, A1g, E2g1, and A2u2 peaks are observed in the range of 100-400 cm-1. The phonon modes are assigned by comparing the peak positions with theoretical calculations. The intensities of the peaks are enhanced at different excitation energies through resonance with different optical transit… ▽ More Raman investigation of MoSe2 was carried out with eight different excitation energies. Seven peaks, including E1g, A1g, E2g1, and A2u2 peaks are observed in the range of 100-400 cm-1. The phonon modes are assigned by comparing the peak positions with theoretical calculations. The intensities of the peaks are enhanced at different excitation energies through resonance with different optical transitions. The A1g mode is enhanced at 1.58 and 3.82 eV, which are near the A exciton energy and the band-to-band transition between higher energy bands, respectively. The E2g1 mode is strongly enhanced with respect to the A1g mode for the 2.71- and 2.81-eV excitations, which are close to the C exciton energy. The different enhancements of the A1g and E2g1 modes are explained in terms of the symmetries of the exciton states and the exciton-phonon coupling. Other smaller peaks including E1g and A2u2 are forbidden but appear due to the resonance effect near optical transition energies. △ Less

Submitted 4 December, 2015; v1 submitted 4 November, 2015; originally announced November 2015.

Comments: 16 pages, 3 figures

Journal ref: Scientific Reports 5, 17113 (2015)

Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus

Authors: Jungcheol Kim, Jae-Ung Lee, Jinhwan Lee, Hyo Ju Park, Zonghoon Lee, Changgu Lee, Hyeonsik Cheong

Abstract: We investigated polarization dependence of the Raman modes in black phosphorus (BP) using five different excitation wavelengths. The crystallographic orientation was determined by comparing polarized optical microscopy with high-resolution transmission electron microscope analysis. In polarized Raman spectroscopy, the B2g mode shows the same polarization dependence regardless of the excitation wav… ▽ More We investigated polarization dependence of the Raman modes in black phosphorus (BP) using five different excitation wavelengths. The crystallographic orientation was determined by comparing polarized optical microscopy with high-resolution transmission electron microscope analysis. In polarized Raman spectroscopy, the B2g mode shows the same polarization dependence regardless of the excitation wavelength or the sample thickness. On the other hand, the Ag1 and Ag2 modes show a peculiar polarization behavior that depends on the excitation wavelength and the sample thickness. The thickness dependence can be explained by considering the anisotropic interference effect due to birefringence and dichroism of the BP crystal, but the wavelength dependence cannot be explained. We propose a simple and fail-proof procedure to determine the orientation of a BP crystal by combining polarized Raman scattering with polarized optical microscopy. △ Less

Submitted 9 November, 2015; v1 submitted 12 October, 2015; originally announced October 2015.

Comments: 22+7 pages, 8+5 figures

Journal ref: Nanoscale, 7, 18708-18715 (2015)

Resonant Raman and photoluminescence spectra of suspended molybdenum disulfide

Authors: Jae-Ung Lee, Kangwon Kim, Hyeonsik Cheong

Abstract: Raman and photoluminescence (PL) measurements were performed on suspended and supported MoS2 up to 6 trilayers (TLs). The difference in the dielectric environment of suspended and supported MoS2 does not lead to large differences in the PL or Raman spectra. Most of the apparent difference in the PL intensity can be explained by the interference effect except for 1TL MoS2. The positions of the Rama… ▽ More Raman and photoluminescence (PL) measurements were performed on suspended and supported MoS2 up to 6 trilayers (TLs). The difference in the dielectric environment of suspended and supported MoS2 does not lead to large differences in the PL or Raman spectra. Most of the apparent difference in the PL intensity can be explained by the interference effect except for 1TL MoS2. The positions of the Raman peaks are not much different between suspended and supported MoS2. The relative intensities, on the other hand, show some differences between suspended and supported samples. In particular, the inter-layer vibration modes are enhanced near resonance with C excitons, with the breathing modes becoming relatively stronger. Up to 4 breathing modes are resolved in suspended 6TL MoS2. △ Less

Submitted 4 November, 2015; v1 submitted 30 September, 2015; originally announced October 2015.

Comments: 18 pages, 4 figures

Journal ref: 2D Mater., 2, 044003 (2015)

Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector

Authors: Minjung Kim, Seon-Myeong Choi, Ho Ang Yoon, Sun Keun Choi, Jae-Ung Lee, Jungcheol Kim, Sang Wook Lee, Young-Woo Son, Hyeonsik Cheong

Abstract: Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of th… ▽ More Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of the graphene channel, not confined to the vicinity of the metal electrodes. The magnitude and the direction of the photocurrent depend on the back-gate bias. Theoretical calculations show that there is a built-in band offset between the two stacking domains, and the dominant mechanism of the photocurrent is the photo-thermoelectric effect due to the Seebeck coefficient difference. △ Less

Submitted 29 September, 2015; originally announced September 2015.

Anomalous excitonic resonance Raman effects in few-layer MoS2

Authors: Jae-Ung Lee, Jaesung Park, Young-Woo Son, Hyeonsik Cheong

Abstract: The resonance effects on the Raman spectra from 5 to 900 cm-1 of few-layer MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at ~2.8 eV for single layer and at ~2.5 eV for few-layer MoS2, which correspond to the band-gap energy. At the excitation energy of 1.96 eV, several anomalous behaviors are o… ▽ More The resonance effects on the Raman spectra from 5 to 900 cm-1 of few-layer MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at ~2.8 eV for single layer and at ~2.5 eV for few-layer MoS2, which correspond to the band-gap energy. At the excitation energy of 1.96 eV, several anomalous behaviors are observed. Many second-order peaks are anomalously enhanced even though the main first-order peaks are not enhanced. In the low-frequency region (<100 cm-1), a broad peak centered at ~38 cm-1 and its second order peak at 76 cm-1 appear for the excitation energy of 1.96 eV. These anomalous resonance effects are interpreted as being due to strong resonance with excitons or exciton-polaritons. △ Less

Submitted 5 February, 2015; v1 submitted 11 January, 2015; originally announced January 2015.

Comments: 34 pages, 18 fugures

Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene

Authors: The An Nguyen, Jae-Ung Lee, Duhee Yoon, Hyeonsik Cheong

Abstract: The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV were used. The position and… ▽ More The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV were used. The position and the line shape of the Raman 2D, G*, N, M, and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established. △ Less

Submitted 22 April, 2014; v1 submitted 4 April, 2014; originally announced April 2014.

Comments: 25 pages, 14 figures

Journal ref: Scientific reports, 4, 4630 (2014)

Nanopatterning graphite by ion-beam-sputtering: Effects of polycrystallinity

Authors: Sun Mi Yoon, J. -S. Kim, D. Yoon, H. Cheong, Y. Kim, H. H. Lee

Abstract: Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both the mean uninterrupted ripple length along its ridge and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield… ▽ More Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both the mean uninterrupted ripple length along its ridge and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains. Coarsening of the ripples-accompanying the mass transport across the grain boundaries-should not be driven by thermal diffusion, rather by ion-induced processes. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures

Polarization dependence of double resonant Raman scattering band in bilayer graphene

Authors: Jae-Ung Lee, Ngor Mbaye Seck, Duhee Yoon, Seon-Myeong Choi, Young-Woo Son, Hyeonsik Cheong

Abstract: The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polar… ▽ More The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman frequency shifts for each peak. We find theoretically that one of these two paths, ignored for a long time, has a small contribution to their scattering intensities but are critical in understanding their polarization dependences. Because of this, the maximum-to-minimum intensity ratios of the four peaks show a strong dependence on the excitation energy, unlike the case of single-layer graphene (SLG). Our findings thus reveal another interesting aspect of electron-phonon interactions in graphitic systems. △ Less

Submitted 14 March, 2014; v1 submitted 2 February, 2014; originally announced February 2014.

Comments: 19 pages, 5 figures

Journal ref: Carbon, 72, 257-263 (2014)

Fano resonance in Raman scattering of graphene

Authors: Duhee Yoon, Dongchan Jeong, Hu-Jong Lee, Riichiro Saito, Young-Woo Son, Hyun Cheol Lee, Hyeonsik Cheong

Abstract: Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G… ▽ More Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG. △ Less

Submitted 23 May, 2013; originally announced May 2013.

Comments: 18 pages, 3 figures, to appear in Carbon

Estimation of Young's Modulus of Graphene by Raman Spectroscopy

Authors: Jae-Ung Lee, Duhee Yoon, Hyeonsik Cheong

Abstract: The Young's modulus of graphene is estimated by measuring the strain applied by a pressure difference across graphene membranes using Raman spectroscopy. The strain induced on pressurized graphene balloons can be estimated directly from the peak shift of the Raman G band. By comparing the measured strain with numerical simulation, we obtained the Young's modulus of graphene. The estimated Young's… ▽ More The Young's modulus of graphene is estimated by measuring the strain applied by a pressure difference across graphene membranes using Raman spectroscopy. The strain induced on pressurized graphene balloons can be estimated directly from the peak shift of the Raman G band. By comparing the measured strain with numerical simulation, we obtained the Young's modulus of graphene. The estimated Young's modulus values of single- and bi-layer graphene are 2.4\pm0.4 TPa and 2.0\pm0.5 TPa, respectively. △ Less

Submitted 11 August, 2012; originally announced August 2012.

Polarization dependence of photocurrent in a metal-graphene-metal device

Authors: Minjung Kim, Ho Ang Yoon, Seungwoo Woo, Duhee Yoon, Sang Wook Lee, Hyeonsik Cheong

Abstract: The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polar… ▽ More The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polarization dependence can be explained as being due to the anisotropic electron-photon interaction of Dirac electrons in graphene. △ Less

Submitted 31 July, 2012; originally announced July 2012.

Comments: 11 pages, 4 figures

Origin of ferroelectric-like hysteresis loop of CaCu3Ti4O12 ceramic studied by impedance and micro-Raman spectroscopy

Authors: Sungmin Park, Hyosang Kwon, Doyoung Park, Hyeonsik Cheong, Gwangseo Park

Abstract: Ferroelectric-like hysteresis loops of CaCu3Ti4O12 (CCTO) ceramic have been observed. We found that this unusual feature does not arise from the displacement of the Ti ions in the TiO6 octahedron, but apparently comes from the charges at the grain boundaries which consist of a CuO layer. The relaxation time of 2.9 milliseconds by the charges from the grain boundary, nearly corresponding to the inv… ▽ More Ferroelectric-like hysteresis loops of CaCu3Ti4O12 (CCTO) ceramic have been observed. We found that this unusual feature does not arise from the displacement of the Ti ions in the TiO6 octahedron, but apparently comes from the charges at the grain boundaries which consist of a CuO layer. The relaxation time of 2.9 milliseconds by the charges from the grain boundary, nearly corresponding to the inverse P - V sampling frequency of 1kHz, has been found in the impedance spectrum. According to the micro-Raman mapping, the CuO layer is found in the grain boundary and is perfectly distinguished from the CCTO grain. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Comments: 13 pages, 3 figures

Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy

Authors: Duhee Yoon, Young-Woo Son, Heonsik Cheong

Abstract: The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substr… ▽ More The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substrate plays a crucial role in determining the physical properties of graphene, and hence its effect must be accounted for in the interpretation of experimental data taken at cryogenic or elevated temperatures. △ Less

Submitted 13 July, 2011; originally announced July 2011.

Comments: 17 pagese, 3 figures, and supporting information (4 pages, 3 figures); Nano Letters, 2011

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

Authors: Jae-Ung Lee, Duhee Yoon, Hakseong Kim, Sang Wook Lee, Hyeonsik Cheong

Abstract: The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2$D$ band of the Raman scattering spectrum, and the thermal conduc… ▽ More The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2$D$ band of the Raman scattering spectrum, and the thermal conductivity was deduced by analyzing heat diffusion equations assuming that the substrate is a heat sink at ambient temperature. The obtained thermal conductivity values range from $\sim$1800 Wm$^{-1}$K$^{-1}$ near 325 K to $\sim$710 Wm$^{-1}$K$^{-1}$ at 500 K. △ Less

Submitted 17 March, 2011; originally announced March 2011.

Comments: 4pages, 3 figures

Journal ref: Physical Review B 83, 081419(R) (2011)

Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene

Authors: Duhee Yoon, Young-Woo Son, Hyeonsik Cheong

Abstract: Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro- Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditio… ▽ More Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro- Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditions owing to both the distorted Dirac cones and anisotropic modifications of phonon dispersion under uniaxial strains. Quantitative agreements between the calculation and experiment enable us to determine the dominant double- resonance Raman scattering path, thereby answering a fundamental question concerning this key experimental analyzing tool for graphitic systems. △ Less

Submitted 25 April, 2011; v1 submitted 16 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 106, 155502 (2011)

Interference effect on Raman spectrum of graphene on SiO_2/Si

Authors: Duhee Yoon, Hyerim Moon, Young-Woo Son, Jin Sik Choi, Bae Ho Park, Young Hun Cha, Young Dong Kim, Hyeonsik Cheong

Abstract: The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of d… ▽ More The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of dielectric layers (SiO_2) underneath it. The ratio is shown to change by almost 370% when the thickness is varied by 60%. The large variation in the ratio is well explained by theoretical calculations considering multiple Raman scattering events at the interfaces. Our analysis shows that the interference effect is critical in extracting the intrinsic 2D to G intensity ratio and therefore must be taken into account in extracting various physical properties of graphene from Raman measurements. △ Less

Submitted 29 August, 2009; originally announced August 2009.

Comments: 21 pages, 5 figures. Phys. Rev. B; in press

Journal ref: Phys. Rev. B 80, 125422 (2009)

Coherent manipulation of electronic states in a double quantum dot

Authors: Toshiaki Hayashi, Toshimasa Fujisawa, Hai-Du Cheong, Yoon-Ha Jeong, Yoshiro Hirayama

Abstract: We investigate coherent time-evolution of charge states (pseudo-spin qubit) in a semiconductor double quantum dot. This fully-tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence m… ▽ More We investigate coherent time-evolution of charge states (pseudo-spin qubit) in a semiconductor double quantum dot. This fully-tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence mechanisms in the present device are also discussed. △ Less

Submitted 18 August, 2003; originally announced August 2003.

Comments: RevTeX

Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As

Authors: M. J. Seong, S. H. Chun, Hyeonsik M. Cheong, N. Samarth, A. Mascarenhas

Abstract: The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity ana… ▽ More The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials. △ Less

Submitted 3 June, 2002; originally announced June 2002.

Comments: two-column format 5 pages, 4 figures, to appear in Physical Review B