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Graphene phase modulators operating in the transparency regime
Authors:
H. F. Y. Watson,
A. Ruocco,
M. Tiberi,
J. E. Muench,
O. Balci,
S. M. Shinde,
S. Mignuzzi,
M. Pantouvaki,
D. Van Thourhout,
R. Sordan,
A. Tomadin,
M. Romagnoli,
A. C. Ferrari
Abstract:
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu…
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Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude.
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Submitted 25 December, 2023;
originally announced January 2024.
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Graphene-perovskite fibre photodetectors
Authors:
S. Akhavan,
A. Taheri Najafabadi,
S. Mignuzzi,
M. Abdi Jalebi,
A. Ruocco,
I. Paradisanos,
O. Balci,
Z. Andaji-Garmaroudi,
I. Goykhman,
L. G. Occhipinti,
E. Lidorikis,
S. D. Stranks,
A. C. Ferrari
Abstract:
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepar…
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The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepare fibre PDs combining rolled graphene layers and photoactive perovskites. Conductive fibres ($\sim$500$Ω$/cm) are made by rolling single layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al$_{2}$O$_{3}$ and parylene C), another rolled SLG as channel, and perovskite as photoactive component. The resulting gate-tunable PDs have response time$\sim$5ms, with an external responsivity$\sim$22kA/W at 488nm for 1V bias. The external responsivity is two orders of magnitude higher and the response time one order of magnitude faster than state-of-the-art wearable fibre based PDs. Under bending at 4mm radius, up to$\sim$80\% photocurrent is maintained. Washability tests show$\sim$72\% of initial photocurrent after 30 cycles, promising for wearable applications.
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Submitted 19 November, 2023;
originally announced November 2023.
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Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment
Authors:
A. R. Cadore,
B. L. T. Rosa,
I. Paradisanos,
S. Mignuzzi,
D. De Fazio,
E. M. Alexeev,
J. E. Muench,
G. Kakavelakis,
S. M. Shinde,
D. Yoon,
S. Tongay,
K. Watanabe,
T. Taniguchi,
E. Lidorikis,
I. Goykhman,
G. Soavi,
A. C. Ferrari
Abstract:
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum…
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Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs
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Submitted 2 May, 2023;
originally announced May 2023.
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Electrically tuneable nonequilibrium optical response of graphene
Authors:
Eva A. A. Pogna,
Andrea Tomadin,
Osman Balci,
Giancarlo Soavi,
Ioannis Paradisanos,
Michele Guizzardi,
Paolo Pedrinazzi,
Sandro Mignuzzi,
Klaas-Jan Tielrooij,
Marco Polini,
Andrea C. Ferrari,
Giulio Cerullo
Abstract:
The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy…
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The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy E$_F$ and of the threshold for interband optical absorption. Here, we report the tunability of the SLG non-equilibrium optical response in the near-infrared (1000-1700nm/0.729-1.240eV), exploring a range of E$_F$ from -650 to 250 meV by ionic liquid gating. As E$_F$ increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For E$_F$ exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, due to hot electrons' excitation increasing SLG absorption. The ability to control both recovery time and sign of nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics.
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Submitted 22 February, 2022; v1 submitted 15 June, 2021;
originally announced June 2021.
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Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors
Authors:
Luca Sortino,
Matthew Brooks,
Panaiot G. Zotev,
Armando Genco,
Javier Cambiasso,
Sandro Mignuzzi,
Stefan A. Maier,
Guido Burkard,
Riccardo Sapienza,
Alexander I. Tartakovskii
Abstract:
Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale.…
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Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe$_2 $ placed on photonic nano-antennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nano-antenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe$_2$ deposited on the nano-antennas of different radii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ is observed for WSe$_2$ monolayers. We also estimate that $>3\%$ strain is achieved in bilayers, accompanied with the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nano-scale parts of the WSe$_2$ layers, as also predicted by our theoretical model. Our results, of direct relevance for both dielectric and plasmonic nano-antennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light-matter interaction in nano-photonic devices.
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Submitted 29 June, 2021; v1 submitted 11 February, 2020;
originally announced February 2020.
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Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas
Authors:
L. Sortino,
P. G. Zotev,
S. Mignuzzi,
J. Cambiasso,
D. Schmidt,
A. Genco,
M. Aßmann,
M. Bayer,
S. A. Maier,
R. Sapienza,
A. I. Tartakovskii
Abstract:
Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we…
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Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe$_2$. We observe a photoluminescence enhancement exceeding 10$^4$ compared with WSe$_2$ placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10$^3$. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.
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Submitted 11 November, 2019; v1 submitted 20 June, 2019;
originally announced June 2019.
