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Observation of the Surface Layer of Lithium Metal using In Situ Spectroscopy
Authors:
Ambrose Seo,
Andrew Meyer,
Sujan Shrestha,
Ming Wang,
Xingcheng Xiao,
Yang-Tse Cheng
Abstract:
We have investigated the surface of lithium metal using x-ray photoemission spectroscopy and optical spectroscopic ellipsometry. Even if we prepare the surface of lithium metal rigorously by chemical cleaning and mechanical polishing inside a glovebox, both spectroscopic investigations show the existence of a few tens of nanometer-thick surface layers, consisting of lithium oxides and lithium carb…
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We have investigated the surface of lithium metal using x-ray photoemission spectroscopy and optical spectroscopic ellipsometry. Even if we prepare the surface of lithium metal rigorously by chemical cleaning and mechanical polishing inside a glovebox, both spectroscopic investigations show the existence of a few tens of nanometer-thick surface layers, consisting of lithium oxides and lithium carbonates. When lithium metal is exposed to room air (~50% moisture), in situ real-time monitoring of optical spectra indicates that the surface layer grows at a rate of approximately 24 nm/min, presumably driven by an interface-controlled process. Our results hint that surface-layer-free lithium metals are formidable to achieve by a simple cleaning/polishing method, suggesting that the initial interface between lithium metal electrodes and solid-state electrolytes in fabricated lithium metal batteries can differ from an ideal lithium/electrolyte contact.
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Submitted 21 September, 2022;
originally announced September 2022.
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Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy
Authors:
S. Shrestha,
C. S. Chang,
S. Lee,
N. L. Kothalawala,
D. Y. Kim,
M. Minola,
J. Kim,
A. Seo
Abstract:
Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samp…
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Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates.
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Submitted 21 September, 2022;
originally announced September 2022.
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Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4
Authors:
S. Shrestha,
M. Krautloher,
M. Zhu,
J. Kim,
J. Hwang,
J. Kim,
J. -W. Kim,
B. Keimer,
A. Seo
Abstract:
We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant…
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We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction.
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Submitted 13 September, 2021;
originally announced September 2021.
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Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study
Authors:
Jagannath Devkota,
Shankar P. Shrestha
Abstract:
We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the phy…
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We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included.
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Submitted 10 December, 2019;
originally announced December 2019.
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Study on Sub monolayer Epitaxy Growth under Anisotropic Detachment
Authors:
Jagannath Devkota,
Shankar P. Shrestha
Abstract:
We have performed Kinetic Monte Carlo simulation to study the effect of diffusion anisotropy and bonding anisotropy on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on Kinetic Monte Carlo method to simulate the physical phenomena. We have…
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We have performed Kinetic Monte Carlo simulation to study the effect of diffusion anisotropy and bonding anisotropy on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on Kinetic Monte Carlo method to simulate the physical phenomena. We have found that surface anisotropy has no significant role on island elongation however it influences on the island morphology, growth exponent and island size distribution. Elongated islands were obtained when bonding anisotropy was included.
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Submitted 10 December, 2019;
originally announced December 2019.
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Thermophoresis of Janus particles at large Knudsen numbers
Authors:
Tobias Baier,
Sudarshan Tiwari,
Samir Shrestha,
Axel Klar,
Steffen Hardt
Abstract:
The force and torque on a Janus sphere moving in a rarefied gas with a thermal gradient are calculated. The regime of large Knudsen number is considered, with the momenta of impinging gas molecules either obtained from a Chapman-Enskog distribution or from a binary Maxwellian distribution between two opposing parallel plates at different temperature. The reflection properties at the surface of the…
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The force and torque on a Janus sphere moving in a rarefied gas with a thermal gradient are calculated. The regime of large Knudsen number is considered, with the momenta of impinging gas molecules either obtained from a Chapman-Enskog distribution or from a binary Maxwellian distribution between two opposing parallel plates at different temperature. The reflection properties at the surface of the Janus particle are characterized by accommodation coefficients having constant but dissimilar values on each hemisphere. It is shown that the Janus particle preferentially orients such that the hemisphere with a larger accommodation coefficient points towards the lower temperature. The thermophoretic velocity of the particle is computed, and the influence of the thermophoretic motion on the magnitude of the torque responsible for the particle orientation is studied. The analytical calculations are supported by Direct Simulation Monte Carlo results, extending the scope of the study towards smaller Knudsen numbers. The results shed light on the efficiency of oriented deposition of nanoparticles from the gas phase onto a cold surface.
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Submitted 13 July, 2018;
originally announced July 2018.
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Spin-split bands cause the indirect band gap of (CH$_3$NH$_3$)PbI$_3$: Experimental evidence from circular photogalvanic effect
Authors:
Daniel Niesner,
Martin Hauck,
Shreetu Shrestha,
Ievgen Levchuk,
Gebhard J. Matt,
Andres Osvet,
Miroslaw Batentschuk,
Christoph Brabec,
Heiko B. Weber,
Thomas Fauster
Abstract:
Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH$_3$NH$_3$)PbI$_3$ in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly…
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Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH$_3$NH$_3$)PbI$_3$ in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CH$_3$NH$_3$)PbI$_3$ device at low temperature ($4~\mathrm{K}$). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CH$_3$NH$_3$)PbI$_3$ with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CH$_3$NH$_3$)PbI$_3$ make it a candidate material for spintronics applications.
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Submitted 25 March, 2017;
originally announced March 2017.
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Temperature-dependent optical spectra of single-crystal (CH$_3$NH$_3$)PbBr$_3$ cleaved in ultrahigh vacuum
Authors:
Daniel Niesner,
Oskar Schuster,
Max Wilhelm,
Ievgen Levchuk,
Andres Osvet,
Shreetu Shrestha,
Miroslaw Batentschuk,
Christoph Brabec,
Thomas Fauster
Abstract:
We measure temperature-dependent one-photon and two-photon induced photoluminescence from (CH3NH3)PbBr3 single crystals cleaved in ultrahigh vacuum. An approach is presented to extract absorption spectra from a comparison of both measurements. Cleaved crystals exhibit broad photoluminescence spectra. We identify the direct optical band gap of 2.31 eV. Below 200 K the band gap increases with temper…
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We measure temperature-dependent one-photon and two-photon induced photoluminescence from (CH3NH3)PbBr3 single crystals cleaved in ultrahigh vacuum. An approach is presented to extract absorption spectra from a comparison of both measurements. Cleaved crystals exhibit broad photoluminescence spectra. We identify the direct optical band gap of 2.31 eV. Below 200 K the band gap increases with temperature, and it decreases at elevated temperature, as described by the Bose-Einstein model. An excitonic transition is found 22 meV below the band gap at temperatures <200 K. Defect emission occurs at photon energies <2.16 eV. In addition, we observe a transition at 2.25 eV (2.22 eV) in the orthorhombic (tetragonal and cubic) phase. Below 200 K, the associated exciton binding energy is also 22 meV, and the transition redshifts at higher temperature. The binding energy of the exciton related to the direct band gap, in contrast, decreases in the cubic phase. High-energy emission from free carriers is observed with higher intensity than reported in earlier studies. It disappears after exposing the crystals to air.
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Submitted 26 November, 2016; v1 submitted 4 October, 2016;
originally announced October 2016.
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Giant Rashba Splitting in CH3NH3PbBr3 Organic-Inorganic Perovskite
Authors:
Daniel Niesner,
Max Wilhelm,
Ievgen Levchuk,
Andres Osvet,
Shreetu Shrestha,
Miroslaw Batentschuk,
Christoph Brabec,
Thomas Fauster
Abstract:
As they combine decent mobilities with extremely long carrier lifetimes, organic-inorganic perovskites have opened a whole new field in opto\-electronics. Measurements of their underlying electronic structure, however, are still lacking. Using angle-resolved photoelectron spectroscopy, we measure the valence band dispersion of single-crystal CH$_3$NH$_3$PbBr$_3$. The dispersion of the highest ener…
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As they combine decent mobilities with extremely long carrier lifetimes, organic-inorganic perovskites have opened a whole new field in opto\-electronics. Measurements of their underlying electronic structure, however, are still lacking. Using angle-resolved photoelectron spectroscopy, we measure the valence band dispersion of single-crystal CH$_3$NH$_3$PbBr$_3$. The dispersion of the highest energy band is extracted applying a modified leading edge method, which accounts for the particular density of states of organic-inorganic perovskites. The surface Brillouin zone is consistent with bulk-terminated surfaces both in the low-temperature orthorhombic and the high-temperature cubic phase. In the low-temperature phase, we find a ring-shaped valence band maximum with a radius of 0.043 Å$^{-1}$, centered around a 0.16 eV deep local minimum in the dispersion of the valence band at the high-symmetry point. Intense circular dichroism is observed. This dispersion is the result of strong spin-orbit coupling. Spin-orbit coupling is also present in the room-temperature phase. The coupling strength is one of the largest reported so far.
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Submitted 5 August, 2016; v1 submitted 19 June, 2016;
originally announced June 2016.
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Dynamic reconstruction for atom probe tomography
Authors:
Baptiste Gault,
Shyeh Tjing Loi,
Vicente J. Araullo-Peters,
Leigh T. Stephenson,
Michael P. Moody,
Sachin L. Shrestha,
Ross K. W. Marceau,
Lan Yao,
Julie M. Cairney,
Simon P. Ringer
Abstract:
Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach, and those subsequently developed, assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed materi…
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Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach, and those subsequently developed, assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed materials. By building upon methods recently proposed to measure the tomographic reconstruction parameters, we demonstrate that this assumption can introduce significant limitations in the accuracy of the analysis. Moreover, we propose a strategy to alleviate this problem through the implementation of a new reconstruction algorithm that dynamically accommodates variations in the tomographic reconstruction parameters.
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Submitted 9 October, 2015;
originally announced October 2015.
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Numerical simulation of moving rigid body in rarefied gases
Authors:
Samir Shrestha,
Sudarshan Tiwari,
Axel Klar,
Steffen Hardt
Abstract:
In this paper we present a numerical scheme to simulate a moving rigid body with arbitrary shape suspended in a rarefied gas. The rarefied gas is simulated by solving the Boltzmann equation using a DSMC particle method. The motion of the rigid body is governed by the Newton-Euler equations, where the force and the torque on the rigid body is computed from the momentum transfer of the gas molecules…
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In this paper we present a numerical scheme to simulate a moving rigid body with arbitrary shape suspended in a rarefied gas. The rarefied gas is simulated by solving the Boltzmann equation using a DSMC particle method. The motion of the rigid body is governed by the Newton-Euler equations, where the force and the torque on the rigid body is computed from the momentum transfer of the gas molecules colliding with the body. On the other hand, the motion of the rigid body influences the gas flow in its surroundings. We validate the numerical results by testing the Einstein relation for Brownian motion of the suspended particle. The translational as well as the rotational degrees of freedom are taken into account. It is shown that the numerically computed translational and rotational diffusion coefficients converge to the theoretical values.
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Submitted 19 June, 2014;
originally announced June 2014.
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Electrical Properties of Conductive Ge Nanocrystal Thin Films Fabricated by Low Temperature In-situ Growth
Authors:
B. Zhang,
Y. Yao,
R. Patterson,
S. Shrestha,
M. A. Green,
G. Conibeer
Abstract:
Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced…
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Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced hole accumulation in NCs, and the hole conduction was found to be a thermally activated process involving charge hopping from one NC to its nearest neighbor. Theoretical analysis has shown that the density of surface states in Ge-NCs is sufficient to induce adequate holes for measured conductivity. The film conductivity can be improved significantly by post-growth rapid thermal annealing and this effect is explained by a simple thermodynamic model. The impact of impurities on the conduction properties was also studied. Neither compensation nor enhancement in conduction was observed in the Sb and Ga doped Ge-NCs TFs, respectively. This could be attributed to the fact that these impurities are no longer shallow dopants in NCs and are much less likely to be effectively activated. Finally, the photovoltaic effect of heterojunction diodes employing such Ge-NCs TFs was characterized in order to demonstrate its functionality in device implementation.
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Submitted 16 January, 2011;
originally announced January 2011.
