Showing 1–26 of 26 results for author: Kim, D -

Quasi-static strain governing ultrafast spin dynamics

Authors: Y. Shin, M. Vomir, D. -H. Kim, P. C. Van, J. -R. Jeong, J. -W. Kim

Abstract: The quasi-static strain (QSS) is the product generated by the lattice thermal expansion after ultrafast photo-excitation and the effects of thermal and QSS are inextricable. Nevertheless, the two phenomena with the same relaxation timescale should be treated separately because of their different fundamental actions to the ultrafast spin dynamics. By employing ultrafast Sagnac interferometry and ma… ▽ More The quasi-static strain (QSS) is the product generated by the lattice thermal expansion after ultrafast photo-excitation and the effects of thermal and QSS are inextricable. Nevertheless, the two phenomena with the same relaxation timescale should be treated separately because of their different fundamental actions to the ultrafast spin dynamics. By employing ultrafast Sagnac interferometry and magneto-optical Kerr effect, we quantitatively prove the existence of QSS, which has been disregarded, and decouple two effects counter-acting each other. Through the magnetoelastic energy analysis, rather we show that QSS in ferromagnets plays a governing role on ultrafast spin dynamics, which is opposite to what have been known on the basis of thermal effect. Our demonstration provides an essential way of analysis on ultrafast photo-induced phenomena. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 6 pages, 4 figures in Manuscript, 8 pages, 4 figures in Supplementary word file

Typical growth behavior of the out-of-time-ordered commutator in many-body localized systems

Authors: J. Lee, D. Kim, D. -H. Kim

Abstract: We investigate the typicality of the growth behavior of the out-of-time-ordered commutator (OTOC) in the many-body localized (MBL) quantum spin chains across random disorder realizations. In the MBL phase of the Heisenberg XXZ chain, we find that the estimate of the OTOC fluctuates significantly with the disorder realizations at the intermediate times of the main growth. Despite the consequent fai… ▽ More We investigate the typicality of the growth behavior of the out-of-time-ordered commutator (OTOC) in the many-body localized (MBL) quantum spin chains across random disorder realizations. In the MBL phase of the Heisenberg XXZ chain, we find that the estimate of the OTOC fluctuates significantly with the disorder realizations at the intermediate times of the main growth. Despite the consequent failure of the disorder average in the MBL phase, we argue that the characteristic behavior of the OTOC growth can still be identified by going through individual disorder realizations. We find that a power-law-type growth behavior appears typically after a disorder-dependent relaxation period, which is very close to the $t^2$ form derived in the effective Hamiltonian of a fully MBL system. The characteristic growth behavior observed at an individual disorder realization is robust in our tests with various state preparations and also verified in another MBL system of the random-transverse-field quantum Ising chain in a uniform longitudinal field. △ Less

Submitted 31 May, 2019; v1 submitted 2 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 184202 (2019)

A New Method for Characterizing Bulk and Surface Conductivities of Three-Dimensional Topological Insulators: Inverted Resistance Measurements

Authors: Y. S. Eo, K. Sun, Ç. Kurdak, D. -J. Kim, Z. Fisk

Abstract: We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configuration consists of one current lead as a closed loop that fully encloses the other current lead on the surface, and two voltage leads that are both place… ▽ More We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configuration consists of one current lead as a closed loop that fully encloses the other current lead on the surface, and two voltage leads that are both placed outside the loop. We show that in the limit where the transport is dominated by the surface conductivity of the material, the four-terminal resistance measured from such a transport geometry is proportional to $σ_b/σ_s^2$, where $σ_b$ and $σ_s$ are the bulk and surface conductivities of the material, respectively. We call this new type of measurement \textit{inverted resistance measurement}, as the resistance scales inversely with the bulk resistivity. We discuss possible implementations of this new method by performing numerical calculations on different geometries and introduce strategies to extract the bulk and surface conductivities. We also demonstrate inverted resistance measurements on SmB$_6$, a topological Kondo insulator, using both single-sided and coaxially-aligned double-sided Corbino disk transport geometries. Using this new method, we are able to measure the bulk conductivity, even at low temperatures, where the bulk conduction is much smaller than the surface conduction in this material. △ Less

Submitted 24 October, 2017; v1 submitted 18 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Applied 9, 044006 (2018)

Planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$

Authors: L. Sun, D. -J. Kim, Z. Fisk, W. K. Park

Abstract: Several technical issues and challenges are identified and investigated for the planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$. Contrasting behaviors of the tunnel junctions prepared in two different ways are analyzed and explained in detail. The conventional approach based on an AlO$_\text{x}$ tunnel barrier results in unsatisfactory results due to the inter-diffusion be… ▽ More Several technical issues and challenges are identified and investigated for the planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$. Contrasting behaviors of the tunnel junctions prepared in two different ways are analyzed and explained in detail. The conventional approach based on an AlO$_\text{x}$ tunnel barrier results in unsatisfactory results due to the inter-diffusion between SmB$_6$ and deposited Al. On the contrary, plasma oxidation of SmB$_6$ crystals produces high-quality tunnel barriers on both (001) and (011) surfaces. Resultant conductance spectra are highly reproducible with clear signatures for the predicted surface Dirac fermions and the bulk hybridization gap as well. The surface states are identified to reside on two or one {\it distinguishable} Dirac cone(s) on the (001) and (011) surface, respectively, in good agreement with the recent literature. However, their topological protection is found to be limited within the low energy region due to their inevitable interaction with the bulk excitations, called spin excitons, consistent with a recent theoretical prediction. Implications of our findings on other physical properties in SmB$_6$ and also other correlated topological materials are remarked. △ Less

Submitted 25 June, 2017; originally announced June 2017.

Comments: 11 pages, 11 figures, published in Phys. Rev. B

Journal ref: Phys. Rev. B 95, 195129 (2017)

Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields

Authors: S. Wolgast, Y. S. Eo, K. Sun, Ç. Kurdak, F. F. Balakirev, M. Jaime, D. -J. Kim, Z. Fisk

Abstract: SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its magnetoresistance in 60-T pulsed fields between 1.5 K and 4 K. The response of the nearly $T$-independent surface states (which show no Shubnikov-de Haas oscillati… ▽ More SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its magnetoresistance in 60-T pulsed fields between 1.5 K and 4 K. The response of the nearly $T$-independent surface states (which show no Shubnikov-de Haas oscillations) is distinct from that of the activated bulk. $E_{A}$ shrinks by 50% under fields up to 60 T. Data up to 93 T suggest that this trend continues beyond 100 T, in contrast with previous explanations. It rules out emerging theories to explain observed exotic magnetic quantum oscillations. △ Less

Submitted 25 October, 2016; originally announced October 2016.

Comments: 12 pages, 3 figures

Journal ref: Phys. Rev. B 95, 245112 (2017)

Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy

Authors: J. Thompson, J. Nichols, S. Lee, S. Ryee, J. H. Gruenewald, J. G. Connell, M. Souri, J. M. Johnson, J. Hwang, M. J. Han, H. N. Lee, D. -W. Kim, S. S. A. Seo

Abstract: Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joul… ▽ More Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T_C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way for improved device applications. △ Less

Submitted 20 October, 2016; originally announced October 2016.

Comments: 8 pages, 4 figures, 1 table

Journal ref: Appl. Phys. Lett. 109, 161902 (2016)

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

Authors: J. G. Connell, J. Nichols, J. H. Gruenewald, D. -W. Kim, S. S. A. Seo

Abstract: We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BH… ▽ More We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns. △ Less

Submitted 1 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 6, 23621 (2016)

Surface and electronic structure of SmB$_6$ through Scanning Tunneling Microscopy

Authors: S. Roessler, Lin Jiao, D. -J. Kim, S. Seiro, K. Rasim, F. Steglich, L. H. Tjeng, Z. Fisk, S. Wirth

Abstract: SmB$_6$, a so called Kondo insulator, is recently discussed as a candidate material for a strong topological insulator. We present detailed atomically resolved topographic information on the (001) surface from more than a dozen SmB$_6$ samples. Atomically flat, {\it in situ} cleaved surfaces often exhibit B- and Sm-terminated surfaces as well as reconstructed and non-reconstructed areas {\it coexi… ▽ More SmB$_6$, a so called Kondo insulator, is recently discussed as a candidate material for a strong topological insulator. We present detailed atomically resolved topographic information on the (001) surface from more than a dozen SmB$_6$ samples. Atomically flat, {\it in situ} cleaved surfaces often exhibit B- and Sm-terminated surfaces as well as reconstructed and non-reconstructed areas {\it coexisting} on different length scales. The terminations are unambiguously identified. In addition, electronic inhomogeneities are observed which likely result from the polar nature of the (001) surface and may indicate an inhomogeneous Sm valence at the surface of SmB$_6$. In addition, atomically resolved topographies on a (110) surface are discussed. △ Less

Submitted 22 December, 2015; originally announced December 2015.

Comments: 8 pages, 6 figures

Enhanced Organic Solar Cells Efficiency through Additive Electronic and Electro-optic Effects Resulting from Doping a Polymer Hole Transport Layer

Authors: C. T. Howells, K. Marbou, H. Kim, K. J. Lee, B. Heinrich, S. J. Kim, A. Nakao, T. Aoyama, S. Furukawa, J. -H. Kim, E. S. Kim, F. Mathevet, S. Mery, I. D. W. Samuel, A. Al Ghaferi, M. S. Dahlem, M. Uchiyama, S. Y. Kim, J. W. Wu, J. -C. Ribierre, C. Adachi, D. -W. Kim, P. André

Abstract: We demonstrate that blending fluorinated molecules in PEDOT:PSS hole transport layers (HTL) induces charge transfers which impact on both charge extraction and photogeneration within organic photovoltaic (OPV) devices. OPVs fabricated with modified HTL and two photoactive polymer blends led systematically to power conversion efficiencies (PCE) increases, with PTB7:PC70BM blend exhibiting PCE of ~… ▽ More We demonstrate that blending fluorinated molecules in PEDOT:PSS hole transport layers (HTL) induces charge transfers which impact on both charge extraction and photogeneration within organic photovoltaic (OPV) devices. OPVs fabricated with modified HTL and two photoactive polymer blends led systematically to power conversion efficiencies (PCE) increases, with PTB7:PC70BM blend exhibiting PCE of ~ 8.3 %, i.e. ~ 15 % increase compared to pristine HTL devices. A reduced device-to-device characteristics variations was also noticed when fluorinated additives were used to modify the PEDOT:PSS. Shading lights onto the effect of HTL fluorination, we show that the morphology of the polymer:PCBM blends remains surprisingly unaffected by the fluorinated HTL surface energy but that, instead, the OPVs are impacted not only by the HTL electronic properties (work function, dipole layer, open circuit voltage, charge transfer dynamic) but also by alteration of the complex refractive indices (photogeneration, short circuit current density, external quantum efficiencies, electro-optic modelling). Both mechanisms find their origin in fluorination induced charge transfers. This work points towards fluorination as a promising strategy toward combining both external quantum efficiency modulation and power conversion efficiency enhancement in OPVs. Charge transfers could also be used more broadly to tune the optical constants and electric field distribution, as well as to reduce interfacial charge recombinations within OPVs. △ Less

Submitted 25 February, 2016; v1 submitted 14 December, 2015; originally announced December 2015.

Comments: 11 pages, 8 figures in J. Mater. Chem. A, 2016

Conduction through subsurface cracks in bulk topological insulators

Authors: S. Wolgast, Y. S. Eo, Ç. Kurdak, D. -J. Kim, Z. Fisk

Abstract: Topological insulators (TIs) have the singular distinction of being electronic insulators while harboring metallic, conductive surfaces. In ordinary materials, defects such as cracks and deformations are barriers to electrical conduction, intuitively making the material more electrically resistive. Peculiarly, 3D TIs should become better conductors when they are cracked because the cracks themselv… ▽ More Topological insulators (TIs) have the singular distinction of being electronic insulators while harboring metallic, conductive surfaces. In ordinary materials, defects such as cracks and deformations are barriers to electrical conduction, intuitively making the material more electrically resistive. Peculiarly, 3D TIs should become better conductors when they are cracked because the cracks themselves, which act as conductive topological surfaces, provide additional paths for the electrical current. Significantly, for a TI material, any surface or extended defect harbors such conduction. In this letter, we demonstrate that small subsurface cracks formed within the predicted 3D TI samarium hexaboride (SmB$_{6}$) via systematic scratching or sanding results in such an increase in the electrical conduction. SmB$_{6}$ is in a unique position among TIs to exhibit this effect because its single-crystals are thick enough to harbor cracks, and because it remarkably does not appear to suffer from conduction through bulk impurities. Our results not only strengthen the building case for SmB$_{6}$'s topological nature, but are relevant to all TIs with cracks, including TI films with grain boundaries. △ Less

Submitted 26 June, 2015; originally announced June 2015.

Comments: 10 pages, 2 figures

Non-local quantum fluctuations and fermionic superfluidity in the imbalanced attractive Hubbard model

Authors: M. O. J. Heikkinen, D. -H. Kim, M. Troyer, P. Törmä

Abstract: We study fermionic superfluidity in strongly anisotropic optical lattices with attractive interactions utilizing the cluster DMFT method, and focusing in particular on the role of non-local quantum fluctuations. We show that non-local quantum fluctuations impact the BCS superfluid transition dramatically. Moreover, we show that exotic superfluid states with delicate order parameter structure, such… ▽ More We study fermionic superfluidity in strongly anisotropic optical lattices with attractive interactions utilizing the cluster DMFT method, and focusing in particular on the role of non-local quantum fluctuations. We show that non-local quantum fluctuations impact the BCS superfluid transition dramatically. Moreover, we show that exotic superfluid states with delicate order parameter structure, such as the Fulde-Ferrell-Larkin-Ovchinnikov phase driven by spin population imbalance, can emerge even in the presence of such strong fluctuations. △ Less

Submitted 30 September, 2014; v1 submitted 27 February, 2014; originally announced February 2014.

Comments: 5 pages, 3 figures

Moving perturbation in a one-dimensional Fermi gas

Authors: A. -M. Visuri, D. -H. Kim, J. J. Kinnunen, F. Massel, P. Törmä

Abstract: We simulate a balanced attractively interacting two-component Fermi gas in a one-dimensional lattice perturbed with a moving potential well or barrier. Using the time-evolving block decimation method, we study different velocities of the perturbation and distinguish two velocity regimes based on clear differences in the time evolution of particle densities and the pair correlation function. We sho… ▽ More We simulate a balanced attractively interacting two-component Fermi gas in a one-dimensional lattice perturbed with a moving potential well or barrier. Using the time-evolving block decimation method, we study different velocities of the perturbation and distinguish two velocity regimes based on clear differences in the time evolution of particle densities and the pair correlation function. We show that, in the slow regime, the densities deform as particles are either attracted by the potential well or repelled by the barrier, and a wave front of hole or particle excitations propagates at the maximum group velocity. Simultaneously, the initial pair correlations are broken and coherence over different sites is lost. In contrast, in the fast regime, the densities are not considerably deformed and the pair correlations are preserved. △ Less

Submitted 2 December, 2014; v1 submitted 3 December, 2013; originally announced December 2013.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. A 90, 051603(R) (2014)

Surface electronic structure of a topological Kondo insulator candidate SmB6: insights from high-resolution ARPES

Authors: M. Neupane, N. Alidoust, S. -Y. Xu, T. Kondo, D. -J. Kim, Chang Liu, I. Belopolski, T. -R. Chang, H. -T. Jeng, T. Durakiewicz, L. Balicas, H. Lin, A. Bansil, S. Shin, Z. Fisk, M. Z. Hasan

Abstract: The Kondo insulator SmB6 has long been known to exhibit low temperature (T < 10K) transport anomaly and has recently attracted attention as a new topological insulator candidate. By combining low-temperature and high energy-momentum resolution of the laser-based ARPES technique, for the first time, we probe the surface electronic structure of the anomalous conductivity regime. We observe that the… ▽ More The Kondo insulator SmB6 has long been known to exhibit low temperature (T < 10K) transport anomaly and has recently attracted attention as a new topological insulator candidate. By combining low-temperature and high energy-momentum resolution of the laser-based ARPES technique, for the first time, we probe the surface electronic structure of the anomalous conductivity regime. We observe that the bulk bands exhibit a Kondo gap of 14 meV and identify in-gap low-lying states within a 4 meV window of the Fermi level on the (001)-surface of this material. The low-lying states are found to form electron-like Fermi surface pockets that enclose the X and the Gamma points of the surface Brillouin zone. These states disappear as temperature is raised above 15K in correspondence with the complete disappearance of the 2D conductivity channels in SmB6. While the topological nature of the in-gap metallic states cannot be ascertained without spin (spin-texture) measurements our bulk and surface measurements carried out in the transport-anomaly-temperature regime (T < 10K) are consistent with the first-principle predicted Fermi surface behavior of a topological Kondo insulator phase in this material. △ Less

Submitted 19 June, 2013; originally announced June 2013.

Comments: 4 Figures, 6 Pages

Exotic superfluid states of lattice fermions in elongated traps

Authors: D. -H. Kim, J. J. Kinnunen, J. -P. Martikainen, P. Törmä

Abstract: We present real-space dynamical mean-field theory calculations for attractively interacting fermions in three-dimensional lattices with elongated traps. The critical polarization is found to be 0.8, regardless of the trap elongation. Below the critical polarization, we find unconventional superfluid structures where the polarized superfluid and Fulde-Ferrell-Larkin-Ovchinnikov-type states emerge a… ▽ More We present real-space dynamical mean-field theory calculations for attractively interacting fermions in three-dimensional lattices with elongated traps. The critical polarization is found to be 0.8, regardless of the trap elongation. Below the critical polarization, we find unconventional superfluid structures where the polarized superfluid and Fulde-Ferrell-Larkin-Ovchinnikov-type states emerge across the entire core region. △ Less

Submitted 1 March, 2011; v1 submitted 28 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. Lett. 106, 095301 (2011)

Induced interactions for ultracold Fermi gases in optical lattices

Authors: D. -H. Kim, P. Törmä, J. -P. Martikainen

Abstract: We investigate the effect of optical lattices on the BCS superfluidity by using the Gorkov--Melik-Barkhudarov (GMB) correction for a two-component Fermi gas. We find that the suppression of the order parameter is strongly enhanced by the lattice effects. The predictions made by the GMB corrections are in qualitative and, for the cases studied, quantitative agreement with previous quantum Monte C… ▽ More We investigate the effect of optical lattices on the BCS superfluidity by using the Gorkov--Melik-Barkhudarov (GMB) correction for a two-component Fermi gas. We find that the suppression of the order parameter is strongly enhanced by the lattice effects. The predictions made by the GMB corrections are in qualitative and, for the cases studied, quantitative agreement with previous quantum Monte Carlo results. We discuss how the GMB correction extends the validity of the mean-field theory to a wider range of tunable optical lattice systems in different dimensions. △ Less

Submitted 16 June, 2009; v1 submitted 29 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 245301 (2009)

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

Authors: S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. -W. Kim, T. W. Noh

Abstract: We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by t… ▽ More We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture. △ Less

Submitted 30 March, 2008; originally announced March 2008.

Comments: 16 pages, 5 figures

Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

Authors: S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D. -W. Kim, C. U. Jung

Abstract: We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent s… ▽ More We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. △ Less

Submitted 25 February, 2008; originally announced February 2008.

Comments: 14 pages, 3 figures

Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels

Authors: Chunli Liu, S. C. Chae, S. H. Chang, S. B. Lee, T. W. Noh, J. S. Lee, B. Kahng, D. -W. Kim, C. U. Jung, S. Seo, Seung-Eon Ahn

Abstract: We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measu… ▽ More We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured. △ Less

Submitted 22 January, 2008; originally announced January 2008.

Comments: 12 pages, 5 figures

Surface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film

Authors: Y. J. Chang, J. S. Yang, Y. S. Kim, D. H. Kim, T. W. Noh, D. -W. Kim, E. OH, B. Kahng, J. -S. Chung

Abstract: We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence… ▽ More We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence of the p$^{XRD}$ was very closely correlated with the dc conductivity near the MIT temperature, and fit the percolation theory predictions quite well: $σ$ $\sim$ (p - p_{c})^{t} with t = 2.0$\pm$0.1 and p_{c} = 0.16$\pm$0.01. This agreement demonstrates that in our VO$_{2}$ thin film, the MIT should occur during the percolation process. We also used surface-sensitive scanning tunneling spectroscopy (STS) to investigate the microscopic evolution of the MIT near the surface. Similar to the XRD results, STS maps revealed a systematic decrease in the metallic phase as temperature decreased. However, this rate of change was much slower than the rate observed with XRD, indicating that the electronic inhomogeneity near the surface differs greatly from that inside the film. We investigated several possible origins of this discrepancy, and postulated that the variety in the strain states near the surface plays an important role in the broad MIT observed using STS. We also explored the possible involvement of such strain effects in other correlated electron oxide systems with strong electron-lattice interactions. △ Less

Submitted 30 July, 2007; originally announced July 2007.

Comments: 27 pages and 7 figures

Incommensurate Charge Order Phase in Fe2OBO3 due to Geometrical Frustration

Authors: M. Angst, R. P. Hermann, W. Schweika, J. -W. Kim, P. Khalifah, H. J. Xiang, M. -H. Whangbo, D. -H. Kim, B. C. Sales, D. Mandrus

Abstract: The temperature dependence of charge order in Fe2OBO3 was investigated by resistivity and differential scanning calorimetry measurements, Mossbauer spectroscopy, and synchrotron x-ray scattering, revealing an intermediate phase between room temperature and 340 K, characterized by coexisting mobile and immobile carriers, and by incommensurate superstructure modulations with temperature-dependent… ▽ More The temperature dependence of charge order in Fe2OBO3 was investigated by resistivity and differential scanning calorimetry measurements, Mossbauer spectroscopy, and synchrotron x-ray scattering, revealing an intermediate phase between room temperature and 340 K, characterized by coexisting mobile and immobile carriers, and by incommensurate superstructure modulations with temperature-dependent propagation vector (1/2,0,tau). The incommensurate modulations arise from specific anti-phase boundaries with low energy cost due to geometrical charge frustration. △ Less

Submitted 24 October, 2007; v1 submitted 20 July, 2007; originally announced July 2007.

Comments: 4 p., 5 fig.; v2: slightly expanded introduction + minor changes. PRL in print

Journal ref: Phys. Rev. Lett. 99, 256402 (2007)

Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films

Authors: S. C. Chae, Y. J. Chang, S. S. A. Seo, T. W. Noh, D. -W. Kim, C. U. Jung

Abstract: High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic… ▽ More High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001]. △ Less

Submitted 23 September, 2006; originally announced September 2006.

Comments: 14 pages, 4 figures

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Authors: C. Liu, S. H. Chang, T. W. Noh, M. Abouzaid, P. Ruterana, H. H. Lee, D. -W. Kim, J. -S. Chung

Abstract: We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO… ▽ More We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed. △ Less

Submitted 22 August, 2006; originally announced August 2006.

Comments: 20 pages, 4 figures

Spin Glass Phase Transition on Scale-Free Networks

Authors: D. -H. Kim, G. J. Rodgers, B. Kahng, D. Kim

Abstract: We study the Ising spin glass model on scale-free networks generated by the static model using the replica method. Based on the replica-symmetric solution, we derive the phase diagram consisting of the paramagnetic (P), ferromagnetic (F), and spin glass (SG) phases as well as the Almeida-Thouless line as functions of the degree exponent $λ$, the mean degree $K$, and the fraction of ferromagnetic… ▽ More We study the Ising spin glass model on scale-free networks generated by the static model using the replica method. Based on the replica-symmetric solution, we derive the phase diagram consisting of the paramagnetic (P), ferromagnetic (F), and spin glass (SG) phases as well as the Almeida-Thouless line as functions of the degree exponent $λ$, the mean degree $K$, and the fraction of ferromagnetic interactions $r$. To reflect the inhomogeneity of vertices, we modify the magnetization $m$ and the spin glass order parameter $q$ with vertex-weights. The transition temperature $T_c$ ($T_g$) between the P-F (P-SG) phases and the critical behaviors of the order parameters are found analytically. When $2 < λ< 3$, $T_c$ and $T_g$ are infinite, and the system is in the F phase or the mixed phase for $r > 1/2$, while it is in the SG phase at $r=1/2$. $m$ and $q$ decay as power-laws with increasing temperature with different $λ$-dependent exponents. When $λ> 3$, the $T_c$ and $T_g$ are finite and related to the percolation threshold. The critical exponents associated with $m$ and $q$ depend on $λ$ for $3 < λ< 5$ ($3 < λ< 4$) at the P-F (P-SG) boundary. △ Less

Submitted 18 April, 2005; v1 submitted 13 January, 2005; originally announced January 2005.

Comments: Phys. Rev. E in press

Towards unified understanding of conductance of stretched monatomic contacts

Authors: H. -W. Lee, H. -S. Sim, D. -H. Kim, K. J. Chang

Abstract: When monatomic contacts are stretched, their conductance behaves in qualitatively different ways depending on their constituent atomic elements. Under a single assumption of resonance formation, we show that various conductance behavior can be understood in a unified way in terms of the response of the resonance to stretching. This analysis clarifies the crucial roles played by the number of val… ▽ More When monatomic contacts are stretched, their conductance behaves in qualitatively different ways depending on their constituent atomic elements. Under a single assumption of resonance formation, we show that various conductance behavior can be understood in a unified way in terms of the response of the resonance to stretching. This analysis clarifies the crucial roles played by the number of valence electrons, charge neutrality, and orbital shapes. △ Less

Submitted 5 November, 2003; originally announced November 2003.

Comments: 2 figures

Journal ref: Physical Review B vol 68, 075424 (2003)

Self-organized Model for Modular Complex Networks : Division and Independence

Authors: D. -H. Kim, G. J. Rodgers, B. Kahng, D. Kim

Abstract: We introduce a minimal network model which generates a modular structure in a self-organized way. To this end, we modify the Barabasi-Albert model into the one evolving under the principle of division and independence as well as growth and preferential attachment (PA). A newly added vertex chooses one of the modules composed of existing vertices, and attaches edges to vertices belonging to that… ▽ More We introduce a minimal network model which generates a modular structure in a self-organized way. To this end, we modify the Barabasi-Albert model into the one evolving under the principle of division and independence as well as growth and preferential attachment (PA). A newly added vertex chooses one of the modules composed of existing vertices, and attaches edges to vertices belonging to that module following the PA rule. When the module size reaches a proper size, the module is divided into two, and a new module is created. The karate club network studied by Zachary is a prototypical example. We find that the model can reproduce successfully the behavior of the hierarchical clustering coefficient of a vertex with degree k, C(k), in good agreement with empirical measurements of real world networks. △ Less

Submitted 10 October, 2003; originally announced October 2003.

Comments: 4 pages, 5 figures

The q-component static model : modeling social networks

Authors: D. -H. Kim, B. Kahng, D. Kim

Abstract: We generalize the static model by assigning a q-component weight on each vertex. We first choose a component $(μ)$ among the q components at random and a pair of vertices is linked with a color $μ$ according to their weights of the component $(μ)$ as in the static model. A (1-f) fraction of the entire edges is connected following this way. The remaining fraction f is added with (q+1)-th color as… ▽ More We generalize the static model by assigning a q-component weight on each vertex. We first choose a component $(μ)$ among the q components at random and a pair of vertices is linked with a color $μ$ according to their weights of the component $(μ)$ as in the static model. A (1-f) fraction of the entire edges is connected following this way. The remaining fraction f is added with (q+1)-th color as in the static model but using the maximum weights among the q components each individual has. This model is motivated by social networks. It exhibits similar topological features to real social networks in that: (i) the degree distribution has a highly skewed form, (ii) the diameter is as small as and (iii) the assortativity coefficient r is as positive and large as those in real social networks with r reaching a maximum around $f \approx 0.2$. △ Less

Submitted 8 July, 2003; originally announced July 2003.

Comments: 5 pages, 6 figures