Showing 1–9 of 9 results for author: Lequeux, S

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices

Authors: Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper

Abstract: Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of… ▽ More Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating. The experimental practicalities, benefits and limits of using electron holography for analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity. △ Less

Submitted 21 April, 2022; originally announced April 2022.

Comments: 22 pages, 7 figures

Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars

Authors: Trevor P. Almeida, Steven Lequeux, Alvaro Palomino, Ricardo C. Sousa, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, Aurélien Masseboeuf, David Cooper

Abstract: Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic… ▽ More Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM nano-pillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature, which has been previously inaccessible. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (60 nm high, 20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In-situ heating demonstrates that the PSA of the FeCoB / NiFe composite storage layer is maintained up to at least 250 degrees centigrade, and direct quantitative measurements reveal the very moderate decrease of magnetic induction with temperature. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions

Authors: N. Caçoilo, S. Lequeux, B. M. S. Teixeira, B. Dieny, R. C. Sousa, N. A. Sobolev, O. Fruchart, I. L. Prejbeanu, L. D. Buda-Prejbeanu

Abstract: The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technologica… ▽ More The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios. △ Less

Submitted 21 April, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 7 pages with a total of 8 figures

Journal ref: Phys. Rev. Applied 16, 024020 (2021)

Chaos and relaxation oscillations in spin-torque windmill neurons

Authors: Rie Matsumoto, Steven Lequeux, Hiroshi Imamura, Julie Grollier

Abstract: Spintronic neurons which emit sharp voltage spikes are required for the realization of hardware neural networks enabling fast data processing with low-power consumption. In many neuroscience and computer science models, neurons are abstracted as non-linear oscillators. Magnetic nano-oscillators called spin-torque nano-oscillators are interesting candidates for imitating neurons at nanoscale. These… ▽ More Spintronic neurons which emit sharp voltage spikes are required for the realization of hardware neural networks enabling fast data processing with low-power consumption. In many neuroscience and computer science models, neurons are abstracted as non-linear oscillators. Magnetic nano-oscillators called spin-torque nano-oscillators are interesting candidates for imitating neurons at nanoscale. These oscillators, however, emit sinusoidal waveforms without spiking while biological neurons are relaxation oscillators that emit sharp voltage spikes. Here we propose a simple way to imitate neuron spiking in high-magnetoresistance nanoscale spin valves where both magnetic layers are free and thin enough to be switched by spin torque. Our numerical-simulation results show that the windmill motion induced by spin torque in the proposed spintronic neurons gives rise to spikes whose shape and frequency, set by the charging and discharging times, can be tuned through the amplitude of injected dc current. We also found that these devices can exhibit chaotic oscillations. Chaotic-like neuron dynamics has been observed in the brain, and it is desirable in some neuromorphic computing applications whereas it should be avoided in others. We demonstrate that the degree of chaos can be tuned in a wide range by engineering the magnetic stack and anisotropies and by changing the dc current. The proposed spintronic neuron is a promising building block for hardware neuromorphic chips leveraging non-linear dynamics for computing. △ Less

Submitted 4 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Applied 11, 044093 (2019)

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Authors: N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o… ▽ More A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Inside the perpendicular spin-torque memristor

Authors: Steven Lequeux, Joao Sampaio, Vincent Cros, Kay Yakushiji, Akio Fukushima, Rie Matsumoto, Hitoshi Kubota, Shinji Yuasa, Julie Grollier

Abstract: Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the developme… ▽ More Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a memristor compatible with Spin-Torque Magnetic Random Access Memory. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Comments: 9 pages, 3 figures

Increased magnetic damping of a single domain wall and adjacent magnetic domains detected by spin torque diode in a nanostripe

Authors: Steven Lequeux, Joao Sampaio, Paolo Bortolotti, Thibaut Devolder, Rie Matsumoto, Kay Yakushiji, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa, Kazumasa Nishimura, Yoshinori Nagamine, Koji Tsunekawa, Vincent Cros, Julie Grollier

Abstract: We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both domains and… ▽ More We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both domains and domain walls is doubled compared to the damping value of their host magnetic layer. We estimate the contributions to damping arising from dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect. We find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls △ Less

Submitted 17 August, 2015; originally announced August 2015.

Resonant translational, breathing and twisting modes of pinned transverse magnetic domain walls

Authors: Peter J. Metaxas, Maximilian Albert, Steven Lequeux, Vincent Cros, Julie Grollier, Paolo Bortolotti, Abdelmadjid Anane, Hans Fangohr

Abstract: We study translational, breathing and twisting resonant modes of transverse magnetic domain walls pinned at notches in ferromagnetic nanostrips. We demonstrate that a mode's sensitivity to notches depends strongly on the characteristics of that particular resonance. For example, the frequencies of modes involving lateral motion of the wall are the ones which are most sensitive to changes in the no… ▽ More We study translational, breathing and twisting resonant modes of transverse magnetic domain walls pinned at notches in ferromagnetic nanostrips. We demonstrate that a mode's sensitivity to notches depends strongly on the characteristics of that particular resonance. For example, the frequencies of modes involving lateral motion of the wall are the ones which are most sensitive to changes in the notch intrusion depth (especially at the narrower, more strongly confined end of the domain wall). In contrast, the breathing mode, whose dynamics are concentrated away from the notches is relatively insensitive to changes in the notches' sizes. We also demonstrate a sharp drop in the translational mode's frequency towards zero when approaching depinning which is found, using a harmonic oscillator model, to be consistent with a reduction in the local slope of the notch-induced confining potential at its edge. △ Less

Submitted 11 September, 2015; v1 submitted 17 November, 2014; originally announced November 2014.

Comments: 11 pages, 10 figures, additional data and analysis

Journal ref: Phys. Rev. B 93, 054414 (2016)

Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks

Authors: Joao Sampaio, Steven Lequeux, Peter J. Metaxas, Andre Chanthbouala, Rie Matsumoto, Kay Yakushiji, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa, Kazumasa Nishimura, Yoshinori Nagamine, Hiroki Maehara, Koji Tsunekawa, Vincent Cros, Julie Grollier

Abstract: We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s) at current densities below $10^7 A/cm^2$. We show that the efficient spin-transfer torque combined with a short propagation distance allows to avoid the Walker… ▽ More We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s) at current densities below $10^7 A/cm^2$. We show that the efficient spin-transfer torque combined with a short propagation distance allows to avoid the Walker breakdown process, and achieve deterministic, reversible and fast ($\approx$ 1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest to the implementation of fast DW-based spintronic devices. △ Less

Submitted 30 November, 2013; v1 submitted 4 September, 2013; originally announced September 2013.

Journal ref: Appl. Phys. Lett. 103, 242415 (2013)