Uniaxial strain effects on the Fermi surface and quantum mobility of the Dirac nodal-line semimetal ZrSiS
Authors:
J. P. Lorenz,
J. F. Linnartz,
A. Kool,
M. R. van Delft,
W. Guo,
I. Aguilera,
R. Singha,
L. M. Schoop,
N. E. Hussey,
S. Wiedmann,
A. de Visser
Abstract:
ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hol…
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ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hole pockets, and multiple magnetic breakdown orbits. In this work we use uniaxial strain as a tuning parameter for the Fermi surface and the low energy excitations. We measure the magnetoresistance of a single crystal under tensile (up to 0.34 %) and compressive (up to -0.28 %) strain exerted along the $a$ axis and in magnetic fields up to 30 T. We observe a systematic weakening of the peak structure in the Shubnikov-de Haas frequency spectrum upon changing from compressive to tensile strain. This effect may be explained by a decrease in the effective quantum mobility upon decreasing the $c/a$ ratio, which is corroborated by a concurrent increase in the Dingle temperature.
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Submitted 22 May, 2024;
originally announced May 2024.
Disorder induced transition from type-I to type-II superconductivity in the Dirac semimetal PdTe$_2$
Authors:
M. V. Salis,
J. P. Lorenz,
Y. K. Huang,
A. de Visser
Abstract:
We report a doping study directed to intentionally induce disorder in PdTe$_2$ by the isoelectronic substitution of Pt. Two single-crystalline batches Pd$_{1-x}$Pt$_x$Te$_2$ have been prepared with nominal doping concentrations x = 0.05 and x = 0.10. Sample characterization by energy dispersive x-ray spectroscopy (EDX) revealed Pt did not dissolve homogeneously in the crystals. For the nominal val…
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We report a doping study directed to intentionally induce disorder in PdTe$_2$ by the isoelectronic substitution of Pt. Two single-crystalline batches Pd$_{1-x}$Pt$_x$Te$_2$ have been prepared with nominal doping concentrations x = 0.05 and x = 0.10. Sample characterization by energy dispersive x-ray spectroscopy (EDX) revealed Pt did not dissolve homogeneously in the crystals. For the nominal value x = 0.10 small single crystals cut from the batch appeared to have x = 0.09, as well as the non stoichiometric composition Pd$_{0.97}$Pt$_{<0.004}$Te$_{2.03}$. Magnetic and heat capacity measurements demonstrate a transition from type-I to type-II superconducting behavior upon increasing disorder. From transport measurements we calculate a residual resistivity $ρ_0$ = 1.4 $μ$$Ω$cm suffices to turn PdTe$_2$ into a superconductor of the second kind.
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Submitted 31 January, 2022;
originally announced January 2022.
