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Vectorial probing of electric and magnetic transitions in variable optical environments and vice-versa
Authors:
R. Chacon,
A. Leray,
J. Kim,
K. Lahlil,
S. Mathew,
A. Bouhelier,
J. -W. Kim,
T. Gacoin,
G. {Colas des Francs}
Abstract:
We use europium doped single crystalline NaYF$_4$ nanorods for probing the electric and magnetic contributions to the local density of optical states (LDOS). Reciprocically, we determine intrinsic properties of the emitters (oscillator strength, quantum yield) by comparing their measured and simulated optical responses in front of a mirror. We first experimentally determine the specifications of t…
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We use europium doped single crystalline NaYF$_4$ nanorods for probing the electric and magnetic contributions to the local density of optical states (LDOS). Reciprocically, we determine intrinsic properties of the emitters (oscillator strength, quantum yield) by comparing their measured and simulated optical responses in front of a mirror. We first experimentally determine the specifications of the nanoprobe (orientation and oscillator strength of the electric and magnetic dipoles moments) and show significant orientation sensitivity of the branching ratios associated with electric and magnetic transitions. In a second part, we measure the modification of the LDOS in front of a gold mirror in a Drexhage's experiment. We discuss the role of the electric and magnetic LDOS on the basis of numerical simulations, taking into account the orientation of the dipolar emitters. We demonstrate that they behave like degenerated dipoles sensitive to polarized partial LDOS.
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Submitted 21 June, 2022;
originally announced June 2022.
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Measuring the magnetic dipole transition of single nanorods by spectroscopy and Fourier microscopy
Authors:
R. Chacon,
A. Leray,
J. Kim,
K. Lahlil,
S. Mathew,
A. Bouhelier,
J. -W. Kim,
T. Gacoin,
G. Colas des Francs
Abstract:
Rare-earth doped nanocrystals possess optical transitions with significant either electric or magnetic dipole characters. They are of strong interest for understanding and engineering light-matter interactions at the nanoscale with numerous applications in nanophotonics. Here, we study the $^5$D$_0\rightarrow ^7$F$_1$ transition dipole vector in individual NaYF$_4$:Eu$^{3+}$ nanorod crystals by Fo…
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Rare-earth doped nanocrystals possess optical transitions with significant either electric or magnetic dipole characters. They are of strong interest for understanding and engineering light-matter interactions at the nanoscale with numerous applications in nanophotonics. Here, we study the $^5$D$_0\rightarrow ^7$F$_1$ transition dipole vector in individual NaYF$_4$:Eu$^{3+}$ nanorod crystals by Fourier and confocal microscopies. {Single crystalline host matrix leads to narrow emission lines at room temperature that permit to separate Stark sublevels resulting from the crystal field splitting}. We observe a fully magnetic transition and {low variability} of the transition dipole orientation over several single nanorods. We estimate the proportion of the dipole transitions for the Stark sublevels. We also determine an effective altitude of the rod with respect to the substrate. The narrow emission lines characteristic of NaYF$_4$:Eu$^{3+}$ ensure well-defined electric or magnetic transitions, and are thus instrumental for probing locally their electromagnetic environment by standard confocal microscopy.
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Submitted 17 September, 2021;
originally announced September 2021.
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Charge Carrier Transport in Iron Pyrite Thin Films: Disorder Induced Variable Range Hopping
Authors:
Sudhanshu Shukla,
Sinu Mathew,
Hwan Sung Choe,
Manjusha Chugh,
Thomas D. Kuhne,
Hossein Mirhosseini,
Xiong Qihua,
Junqiao Wu,
Thirumalai Venkatesan,
Thirumany Sritharan,
Joel W. Ager
Abstract:
The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge trans…
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The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge transport mechanism is determined to be nearest neighbour hopping (NNH) at near room temperature with Mott-type variable range hopping (VRH) of holes via localized states occurring at lower temperatures. Density functional theory (DFT) predicts that sulfur vacancy induced localized defect states will be situated within the band gap with the charge remaining localized around the defect. The data indicate that the electronic properties including hopping transport in pyrite thin films can be correlated to sulfur vacancy related defect. The results provide insights on electronic properties of pyrite thin films and its implications for charge transport
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Submitted 20 June, 2021; v1 submitted 15 June, 2021;
originally announced June 2021.
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Evidence of Rotational Fröhlich Coupling in Polaronic Trions
Authors:
Maxim Trushin,
Soumya Sarkar,
Sinu Mathew,
Sreetosh Goswami,
Prasana Sahoo,
Yan Wang,
Jieun Yang,
Weiwei Li,
Judith L. MacManus-Driscoll,
Manish Chhowalla,
Shaffique Adam,
T. Venkatesan
Abstract:
Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich ap…
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Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.
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Submitted 12 August, 2020; v1 submitted 20 November, 2019;
originally announced November 2019.
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Structure and lattice dynamics of the wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$
Authors:
M. Råsander,
J. B. Quirk,
T. Wang,
S. Mathew,
R. Davies,
R. Palgrave,
M. A. Moram
Abstract:
We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in…
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We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in the lattice dynamics between MgSiN$_{2}$, MgGeN$_{2}$ and AlN, for example we find that the highest phonon frequency in MgSiN$_{2}$ is about 100~cm$^{-1}$ higher than the highest frequency in AlN and that MgGeN$_{2}$ is much softer. We also provide the Born effective charge tensors and dielectric tensors of MgSiN$_{2}$, MgGeN$_{2}$ and AlN. Phonon related thermodynamic properties, such as the heat capacity and entropy, are in very good agreement with available experimental results.
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Submitted 3 May, 2017;
originally announced May 2017.
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Magnetism in MoS2 induced by MeV proton irradiation
Authors:
S. Mathew,
K. Gopinadhan,
T. K. Chan,
X. J. Yu,
D. Zhan,
L. Cao,
A. Rusydi,
M. B. H. Breese,
S. Dhar,
Z. X. Shen,
T. Venkatesan,
John TL Thong
Abstract:
Molybdenum disulphide, a diamagnetic layered dichalcogenide solid, is found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam. The temperature dependence of magnetization displays ferrimagnetic behavior with a Curie temperature of 895 K. A disorder mode corresponding to a zone-edge phonon and a Mo valence higher than +4, have been detected in the irradiated samples…
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Molybdenum disulphide, a diamagnetic layered dichalcogenide solid, is found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam. The temperature dependence of magnetization displays ferrimagnetic behavior with a Curie temperature of 895 K. A disorder mode corresponding to a zone-edge phonon and a Mo valence higher than +4, have been detected in the irradiated samples using Raman and X-ray photoelectron spectroscopy, respectively. The possible origins of long-range magnetic ordering in irradiated MoS2 samples are discussed.
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Submitted 17 September, 2012;
originally announced September 2012.
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Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces
Authors:
K. Bhattacharjee,
A. Roy,
S. Roy,
J. Ghatak,
S. Mathew,
P. V. Satyam,
B. N. Dev
Abstract:
Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. ST…
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Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520°C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550°C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.
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Submitted 19 October, 2011;
originally announced October 2011.
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The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation
Authors:
S. Mathew,
T. K. Chan,
D. Zhan,
K. Gopinadhan,
A. R. Barman,
M. B. H. Breese,
S. Dhar,
Z. X. Shen,
T. Venkatesan,
John TL Thong
Abstract:
The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a t…
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The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a thermal model for the production of damage by the ion beam. We propose a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism.
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Submitted 29 January, 2011;
originally announced January 2011.
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Magnetism in C60 Films Induced by Proton Irradiation
Authors:
S. Mathew,
B. Satpati,
B. Joseph,
B. N. Dev,
R. Nirmala,
S. K. Malik
Abstract:
It is shown that polycrystalline fullerene thin films on hydrogen passivated Si(111) substrates irradiated by 2 MeV protons displays ferromagnetic-like behavior at 5 K. At 300 K both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range 2 - 300 K, in 1 Tesla applied field, for the irradiated film shows much stronger temperature dependence com…
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It is shown that polycrystalline fullerene thin films on hydrogen passivated Si(111) substrates irradiated by 2 MeV protons displays ferromagnetic-like behavior at 5 K. At 300 K both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range 2 - 300 K, in 1 Tesla applied field, for the irradiated film shows much stronger temperature dependence compared to the pristine film. Possible origin of ferromagnetic-like signals in the irradiated films are discussed.
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Submitted 22 March, 2005; v1 submitted 13 March, 2005;
originally announced March 2005.
