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Exchange Anisotropy in Epitaxial and Polycrystalline NiO/NiFe Bilayers
Authors:
R. P. Michel,
A. Chaiken,
C. T. Wang,
L. E. Johnson
Abstract:
(001) oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of the NiFe ferromagnetic layer. Simple models predict no exchange anisotropy for the (001)-oriented surface, which in its bulk termination is magnetically comp…
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(001) oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of the NiFe ferromagnetic layer. Simple models predict no exchange anisotropy for the (001)-oriented surface, which in its bulk termination is magnetically compensated. Nonetheless exchange anisotropy is present in the epitaxial films, although it is approximately half as large as in polycrystalline films that were grown simultaneously. Experiments show that differences in exchange field and coercivity between polycrystalline and epitaxial NiFe/NiO bilayers couples arise due to variations in induced surface anisotropy and not from differences in the degree of compensation of the terminating NiO plane. Implications of these observations for models of induced exchange anisotropy in NiO/NiFe bilayer couples will be discussed.
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Submitted 16 January, 1997;
originally announced January 1997.
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NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target
Authors:
Richard P. Michel,
A. Chaiken,
Young K. Kim,
Lantz E. Johnson
Abstract:
A new process for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of t…
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A new process for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.
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Submitted 9 June, 1996;
originally announced June 1996.
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Soft X-ray Fluorescence Study of Buried Silicides in Antiferromagnetically Coupled Fe/Si Multilayer
Authors:
J. A. Carlisle,
A. Chaiken,
R. P. Michel,
L. J. Terminello,
J. J. Jia,
T. A. Callcott,
D. L. Ederer
Abstract:
Soft x-ray fluorescence spectroscopy has been employed to obtain information about the Si-derived valence band states of Fe/Si multilayers. The valence band spectra are quite different for films with and without antiferromagnetic interlayer exchange coupling, demonstrating that these multilayers have different silicide phases in their spacer layers. Comparison with previously published fluoresce…
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Soft x-ray fluorescence spectroscopy has been employed to obtain information about the Si-derived valence band states of Fe/Si multilayers. The valence band spectra are quite different for films with and without antiferromagnetic interlayer exchange coupling, demonstrating that these multilayers have different silicide phases in their spacer layers. Comparison with previously published fluorescence data on bulk iron silicides shows that the Fe concentration in the silicide spacer layers is substantial. Near-edge x-ray absorption data on antiferromagnetically coupled multilayers in combination with the fluorescence data demonstrate unambiguously that the silicide spacer layer in these films is metallic. These results on the electronic structure of buried layers in a multilayer film exemplify the wide range of experiments made possible by new high-brightness synchrotron sources.
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Submitted 17 December, 1995;
originally announced December 1995.
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Magnetic Properties of Epitaxial and Polycrystalline Fe/Si Multilayers
Authors:
A. Chaiken,
R. P. Michel,
C. -T. Wang
Abstract:
Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. High-angle x-ray diffraction measurements show that both sets of films have narrow Fe peaks, implying a large crystallite size and crystalline iron silicide spacer layers. Low-angle x-ray diffraction measurements show that films grown on glass have rou…
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Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. High-angle x-ray diffraction measurements show that both sets of films have narrow Fe peaks, implying a large crystallite size and crystalline iron silicide spacer layers. Low-angle x-ray diffraction measurements show that films grown on glass have rougher interfaces than those grown on single-crystal substrates. The multilayers grown on glass have a larger remanent magnetization than the multilayers grown on single-crystal substrates. The observation of magnetocrystalline anisotropy in hysteresis loops and $(hkl)$ peaks in x-ray diffraction demonstrates that the films grown on MgO and Ge are epitaxial. The smaller remanent magnetization in Fe/Si multilayers with better layering suggests that the remanence is not an intrinsic property.
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Submitted 26 August, 1995;
originally announced August 1995.
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Structure and Magnetism of Fe/Si Multilayers Grown by Ion-Beam Sputtering
Authors:
A. Chaiken,
R. P. Michel,
M. A. Wall
Abstract:
Ion-beam sputtering has been used to prepare Fe/Si multilayers on a variety of substrates and over a wide range of temperatures. Small-angle x-ray diffraction and transmission electron microscopy experiments show that the layers are heavily intermixed although a composition gradient is maintained. When the spacer layer is an amorphous iron silicide, the magnetic properties of the multilayers are…
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Ion-beam sputtering has been used to prepare Fe/Si multilayers on a variety of substrates and over a wide range of temperatures. Small-angle x-ray diffraction and transmission electron microscopy experiments show that the layers are heavily intermixed although a composition gradient is maintained. When the spacer layer is an amorphous iron silicide, the magnetic properties of the multilayers are similar to those of bulk Fe. When the spacer layer is a crystalline silicide with the B2 or DO$_3$ structure, the multilayers show antiferromagnetic interlayer coupling like that observed in ferromagnet/paramagnet multilayers such as Fe/Cr and Co/Cu. Depending on the substrate type and the growth temperature, the multilayers grow in either the (011) or (001) texture. The occurrence of the antiferromagnetic interlayer coupling is dependent on the crystallinity of the iron and iron silicide layers, but does not seem to be strongly affected by the perfection of the layering or the orientation of the film. Since the B2- and DO$_3$-structure Fe$\rm _x$Si$\rm _{1-x}$ compounds are known to be metallic, antiferromagnetic interlayer coupling in Fe/Si multilayers probably originates from the same quantum-well and Fermi surface effects as in Fe/Cr and Co/Cu multilayers.
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Submitted 9 August, 1995;
originally announced August 1995.
