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Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells
Authors:
Nikolai Tsvetkov,
Byeong Cheul Moon,
Jeung Ku Kang,
Muhammad Ejaz Khan,
Yong-Hoon Kim
Abstract:
Halide perovskite light absorbers have great advantages for photovoltaics such as efficient solar energy absorption, but charge accumulation and recombination at the interface with an electron transport layer (ETL) remains a major challenge in realizing their full potential. Here we report the experimental realization of a zipper-like interdigitated interface between a Pb-based halide perovskite l…
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Halide perovskite light absorbers have great advantages for photovoltaics such as efficient solar energy absorption, but charge accumulation and recombination at the interface with an electron transport layer (ETL) remains a major challenge in realizing their full potential. Here we report the experimental realization of a zipper-like interdigitated interface between a Pb-based halide perovskite light absorber and an oxide ETL by the PbO capping of the ETL surface, which produces an atomically thin two-dimensional metallic layer that can significantly enhance the perovskite/ETL charge extraction process. As the atomistic origin of the emergent two-dimensional interfacial metallicity, first-principles calculations performed on the representative MAPbI$_3$/TiO$_2$ interface identify the interfacial strain induced by the simultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pb bonds bridging MAPbI$_3$ and TiO$_2$) and contracted substitutional Pb-O bonds. Direct and indirect experimental evidences for the presence of interfacial metallic states are provided, and a non-conventional defect-passivating nature of the strained interdigitated perovskite/ETL interface is emphasized. It is experimentally demonstrated that the PbO capping method is generally applicable to other ETL materials including ZnO and SrTiO$_3$, and that the zipper-like interdigitated metallic interface leads to about two-fold increase in charge extraction rate. Finally, in terms of the photovoltaic efficiency, we observe a volcano-type behavior with the highest performance achieved at the monolayer-level PbO capping. The method established here might prove to be a general interface engineering approach to realize high-performance perovskite solar cells.
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Submitted 17 December, 2020;
originally announced December 2020.
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Clarifying multiple-tip effects on Scanning Tunneling Microscopy imaging of 2D periodic objects and crystallographic averaging in the spatial frequency domain
Authors:
Jack C. Straton,
Peter Moeck,
Bill Moon Jr.,
Taylor T. Bilyeu
Abstract:
Crystallographic image processing (CIP) techniques may be utilized in scanning probe microscopy (SPM) to glean information that has been obscured by signals from multiple probe tips. This may be of particular importance for scanning tunneling microscopy (STM) and requires images from a sample that is periodic in two dimensions. The image-forming current for multiple tips in STM is derived in a mor…
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Crystallographic image processing (CIP) techniques may be utilized in scanning probe microscopy (SPM) to glean information that has been obscured by signals from multiple probe tips. This may be of particular importance for scanning tunneling microscopy (STM) and requires images from a sample that is periodic in two dimensions. The image-forming current for multiple tips in STM is derived in a more straightforward manner than prior approaches. The Fourier spectrum of the current for p4mm Bloch surface wave functions and a pair of delta function tips reveals the tip-separation dependence of various types of image obscurations. In particular our analyses predict that quantum interference should be visible on a macroscopic scale in the form of bands quite distinct from the basket-weave patterns a purely classical model would create at the same periodic double STM tip separations. A surface wave function that models the essential character of highly (0001) oriented pyrolytic graphite (technically known as HOPG) is introduced and used for a similar tip-separation analysis. Using a bonding H_2 tip wave function with significant spatial extent instead of this pair of infinitesimal Dirac delta function tips does not affect these outcomes in any observable way. This is explained by Pierre Curie's well known symmetry principle. Classical simulations of multiple tip effects in STM images may be understood as modeling multiple tip effects in images that were recorded with other types of SPMs). Our analysis clarifies why CIP and crystallographic averaging work well in removing the effects of a blunt SPM tip (that consist of multiple mini-tips) from the recorded 2D periodic images and also outlines the limitations of this image processing techniques for certain spatial separations of STM mini-tips.
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Submitted 1 July, 2020;
originally announced July 2020.
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Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS$_2$
Authors:
Byoung Hee Moon,
Gang Hee Han,
Miloš M. Radonjić,
Hyunjin Ji,
Vladimir Dobrosavljević
Abstract:
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition…
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The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition (MIT), revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground for the study of strong correlation physics, which should open an exciting avenue for future research, making a parallel with recent advances in twisted bilayer graphene
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Submitted 11 November, 2019; v1 submitted 7 November, 2019;
originally announced November 2019.
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Electron-hole pair condensation in Graphene/MoS2 heterointerface
Authors:
Min-Kyu Joo,
Youngjo Jin,
Byoung Hee Moon,
Hyun Kim,
Sanghyub Lee,
Young Hee Lee
Abstract:
Excitons are electron-hole (e-h) pair quasiparticles, which may form a Bose-Einstein condensate (BEC) and collapse into the phase coherent state at low temperature. However, because of ephemeral strength of pairing, a clear evidence for BEC in electron-hole system has not yet been observed. Here, we report electron-hole pair condensation in graphene (Gr)/MoS2 heterointerface at 10K without magneti…
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Excitons are electron-hole (e-h) pair quasiparticles, which may form a Bose-Einstein condensate (BEC) and collapse into the phase coherent state at low temperature. However, because of ephemeral strength of pairing, a clear evidence for BEC in electron-hole system has not yet been observed. Here, we report electron-hole pair condensation in graphene (Gr)/MoS2 heterointerface at 10K without magnetic field. As a direct indication of e-h pair condensation, we demonstrate a vanished Hall drag voltage and the resultant divergence of drag resistance. While strong excitons are formed at Gr/MoS2 heterointerface without insulating layer, carrier recombination via interlayer tunneling of carriers is suppressed by the vertical p-Gr/n-MoS2 junction barrier, consequently yielding high BEC temperature of 10K, ~1000 times higher than that of two-dimensional electron gas in III-V quantum wells. The observed excitonic transport is mainly governed by the interfacial properties of the Gr/MoS2 heterostructure, rather than the intrinsic properties of each layer. Our approach with available large-area monolayer graphene and MoS2 provides a high feasibility for quantum dissipationless electronics towards integration.
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Submitted 1 November, 2017;
originally announced November 2017.
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Coulomb drag transistor via graphene/MoS2 heterostructures
Authors:
Youngjo Jin,
Min-Kyu Joo,
Byoung Hee Moon,
Hyun Kim,
Sanghyup Lee,
Hye Yun Jeong,
Hyo Yeol Kwak,
Young Hee Lee
Abstract:
Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag int…
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Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag interaction at a graphene/MoS2 (GM) heterointerface. The ideal van der Waals distance allows strong coupling of the interlayer electron-hole pairs, whose recombination is prevented by the Schottky barrier formed due to charge transfer at the heterointerface. This device exhibits a high carrier mobility (up to ~3,700 cm^2V^-1s^-1) even at room temperature, while maintaining a high on/off current ratio (~10^8), outperforming those of individual layers. In the electron-electron drag regime, graphene-like Shubnikov-de Haas oscillations are observed at low temperatures. Our Coulomb drag transistor could provide a shortcut for the practical application of quantum-mechanical 2D heterostructures at room temperature.
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Submitted 31 October, 2017;
originally announced October 2017.
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Ion-beam nanopatterning of silicon surfaces under co-deposition of non-silicide-forming impurities
Authors:
B. Moon,
S. Yoo,
J. -S. Kim,
S. J. Kang,
J. Muñoz-García,
R. Cuerno
Abstract:
We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of met…
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We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive X-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.
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Submitted 11 January, 2016;
originally announced January 2016.
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Microwave pinning modes near Landau filling $ν=1$ in two-dimensional electron systems with alloy disorder
Authors:
B. -H. Moon,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We report measurements of microwave spectra of two-dimensional electron systems hosted in dilute Al alloy, Al$_x$Ga$_{1-x}$As, for a range of Landau level fillings, $ν$, around 1. For $ν>0.8$ or $ν<1.2$, the samples exhibit a microwave resonance whose frequency decreases as $ν$ moves away from 1. A resonance with this behavior is the signature of solids of quasiparticles or -holes in the partially…
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We report measurements of microwave spectra of two-dimensional electron systems hosted in dilute Al alloy, Al$_x$Ga$_{1-x}$As, for a range of Landau level fillings, $ν$, around 1. For $ν>0.8$ or $ν<1.2$, the samples exhibit a microwave resonance whose frequency decreases as $ν$ moves away from 1. A resonance with this behavior is the signature of solids of quasiparticles or -holes in the partially occupied Landau level, which was previously seen in ultralow disorder samples. For $ν<0.8$ down to as low as $ν=0.54$, a resonance in the spectra is still present in the Al alloy-disordered samples, though it is partially or completely suppressed at $ν=3/5$ and $1/2$, and is strongly damped over much of this $ν$ range. The resonance also shows a striking enhancement in peak frequency for $ν$ just below 3/4. We discuss possible explanations of the resonance behavior for $ν<0.8$ in terms of the composite fermion picture.
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Submitted 1 December, 2014;
originally announced December 2014.
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Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
Authors:
Nihar R. Pradhan,
Daniel Rhodes,
Simin Feng,
Yan Xin,
Shahriar Memaran,
Byoung-Hee Moon,
Humberto Terrones,
Mauricio Terrones,
Luis Balicas
Abstract:
Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-…
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Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.
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Submitted 1 June, 2014;
originally announced June 2014.
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Pinning modes of high magnetic field Wigner solids with controlled alloy disorder
Authors:
B. -H. Moon,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
For a series of samples with 2D electron systems in dilute Al_x Ga_{1-x}As, with varying x from 0 to 0.8 %, we survey the pinning mode resonances of Wigner solids at the low Landau filling termination of the fractional quantum Hall effect (FQHE) series. For all x studied, the pinning modes are present with frequencies, f_pk, that are consistent with collective weak pinning. For x>=0.22% we find f_…
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For a series of samples with 2D electron systems in dilute Al_x Ga_{1-x}As, with varying x from 0 to 0.8 %, we survey the pinning mode resonances of Wigner solids at the low Landau filling termination of the fractional quantum Hall effect (FQHE) series. For all x studied, the pinning modes are present with frequencies, f_pk, that are consistent with collective weak pinning. For x>=0.22% we find f_pk vs B exhibits a rapid increase that is not present for x=0. We find the observed f_pk is much smaller than values calculated with a simple Wigner solid model which neglects the effects of the disorder on the charge distribution of a carrier.
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Submitted 16 January, 2014;
originally announced January 2014.
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Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells
Authors:
A. T. Hatke,
Yang Liu,
B. A. Magill,
B. H. Moon,
L. W. Engel,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect (FQHE), as well as solid phases with broken spatial symmetry and crystalline order. Solids can occ…
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In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect (FQHE), as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau filling ($ν$) termination of the FQHE series, but also within integer quantum Hall effects (IQHEs). Here, we present microwave spectroscopy studies of wide quantum wells (WQWs). The spectra clearly reveal two distinct solid phases, hidden within what in dc transport would be the zero diagonal conductivity of an integer quantum Hall effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid (WS) of ordinary (quasi) electrons or holes.
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Submitted 29 December, 2013;
originally announced December 2013.
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Knudsen-to-Hydrodynamic Crossover in Liquid 3He in a High-Porosity Aerogel
Authors:
H. Takeuchi,
S. Higashitani,
K. Nagai,
H. C. Choi,
B. H. Moon,
N. Masuhara,
M. W. Meisel,
Y. Lee,
N. Mulders
Abstract:
We present a combined experimental and theoretical study of the drag force acting on a high porosity aerogel immersed in liquid ${}^3$He and its effect on sound propagation. The drag force is characterized by the
Knudsen number, which is defined as the ratio of the quasiparticle mean free path to the radius of an aerogel strand. Evidence of the Knudsen-hydrodynamic crossover is clearly demonstra…
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We present a combined experimental and theoretical study of the drag force acting on a high porosity aerogel immersed in liquid ${}^3$He and its effect on sound propagation. The drag force is characterized by the
Knudsen number, which is defined as the ratio of the quasiparticle mean free path to the radius of an aerogel strand. Evidence of the Knudsen-hydrodynamic crossover is clearly demonstrated by a drastic change in the temperature dependence of ultrasound attenuation in 98% porosity aerogel. Our theoretical analysis shows that the frictional sound damping caused by the drag force is governed by distinct laws in the two regimes, providing excellent agreement with the experimental observation.
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Submitted 4 June, 2012; v1 submitted 25 January, 2012;
originally announced January 2012.
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Ultrasound attenuation and a P-B-T phase diagram of superfluid 3He in 98% aerogel
Authors:
B. H. Moon,
N. Masuhara,
P. Bhupathi,
M. Gonzalez,
M. W. Meisel,
N. Mulders,
Y. Lee
Abstract:
Longitudinal sound attenuation measurements in superfluid 3He in 98% aerogel were conducted at pressures between 14 and 33 bar and in magnetic fields up to 4.44 kG. The temperature dependence of the ultrasound attenuation in the A-like phase was determined for the entire superfluid region exploiting the field induced meta-stable A-like phase at the highest field. In the lower field, the A-B tran…
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Longitudinal sound attenuation measurements in superfluid 3He in 98% aerogel were conducted at pressures between 14 and 33 bar and in magnetic fields up to 4.44 kG. The temperature dependence of the ultrasound attenuation in the A-like phase was determined for the entire superfluid region exploiting the field induced meta-stable A-like phase at the highest field. In the lower field, the A-B transition in aerogel was identified by a smooth jump in attenuation on both cooling and warming. Based on the transitions observed on warming, a phase diagram as a function of pressure (P), temperature (T) and magnetic field (B) is constructed. We find that the A-B phase boundary in aerogel recedes in a drastically different manner than in bulk in response to an increasing magnetic field. The implications of the observed phase diagram are discussed.
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Submitted 28 April, 2010; v1 submitted 1 February, 2010;
originally announced February 2010.
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Magnetic field induced quantum phase transition of the $S = 1/2$ antiferromagnet $K_2NaCrO_8$
Authors:
S. Nellutla,
M. Pati,
Y. -J. Jo,
H. D. Zhou,
B. H. Moon,
D. M. Pajerowski,
Y. Yoshida,
J. A. Janik,
L. Balicas,
Y. Lee,
M. W. Meisel,
Y. Takano,
C. R. Wiebe,
N. S. Dalal
Abstract:
The magnetic properties of alkali-metal peroxychromate K$_2$NaCrO$_8$ are governed by the $S = 1/2$ pentavalent chromium cation, Cr$^{5+}$. Specific heat, magnetocalorimetry, ac magnetic susceptibility, torque magnetometry, and inelastic neutron scattering data have been acquired over a wide range of temperature, down to 60 mK, and magnetic field, up to 18 T. The magnetic interactions are quasi-…
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The magnetic properties of alkali-metal peroxychromate K$_2$NaCrO$_8$ are governed by the $S = 1/2$ pentavalent chromium cation, Cr$^{5+}$. Specific heat, magnetocalorimetry, ac magnetic susceptibility, torque magnetometry, and inelastic neutron scattering data have been acquired over a wide range of temperature, down to 60 mK, and magnetic field, up to 18 T. The magnetic interactions are quasi-two-dimensional prior to long-range ordering, where $T_N = 1.66$ K in $H = 0$. In the $T \to 0$ limit, the magnetic field tuned antiferromagnetic-ferromagnetic phase transition suggests a critical field $H_c = 7.270$ T and a critical exponent $α= 0.481 \pm 0.004$. The neutron data indicate the magnetic interactions may extend over intra-planar nearest-neighbors and inter-planar next-nearest-neighbor spins.
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Submitted 8 December, 2009;
originally announced December 2009.
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Ultrasound attenuation of superfluid $^{3}$He in aerogel
Authors:
H. C. Choi,
N. Masuhara,
B. H. Moon,
P. Bhupathi,
M. W. Meisel,
Y. Lee,
N. Mulders,
S. Higashitani,
M. Miura,
K. Nagai
Abstract:
We have performed longitudinal ultrasound (9.5 MHz) attenuation measurements in the B-phase of superfluid $^3$He in 98% porosity aerogel down to the zero temperature limit for a wide range of pressures at zero magnetic field. The absolute attenuation was determined by direct transmission of sound pulses. Compared to the bulk fluid, our results revealed a drastically different behavior in attenua…
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We have performed longitudinal ultrasound (9.5 MHz) attenuation measurements in the B-phase of superfluid $^3$He in 98% porosity aerogel down to the zero temperature limit for a wide range of pressures at zero magnetic field. The absolute attenuation was determined by direct transmission of sound pulses. Compared to the bulk fluid, our results revealed a drastically different behavior in attenuation, which is consistent with theoretical accounts with gapless excitations and a collision drag effect.
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Submitted 3 April, 2007;
originally announced April 2007.
