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Gate-tunable ferromagnetism in a van der Waals magnetic semimetal
Authors:
Hideki Matsuoka,
Shun Kajihara,
Yue Wang,
Yoshihiro Iwasa,
Masaki Nakano
Abstract:
Magnetic semimetals form an attractive class of materials because of the non-trivial contributions of itinerant electrons to magnetism. Due to their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating techni…
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Magnetic semimetals form an attractive class of materials because of the non-trivial contributions of itinerant electrons to magnetism. Due to their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, then decreases to some extent. Interestingly, this non-monotonous variation of TC accompanies the switching of the magnetic anisotropy. Furthermore, such evolutions of TC and anisotropy occur synchronously with the sigh changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature, where the band crossing points play a crucial role both for the magneto-transport properties and magnetism itself.
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Submitted 24 April, 2023;
originally announced April 2023.
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Signature of topological band crossing in ferromagnetic Cr1/3NbSe2 epitaxial thin film
Authors:
Bruno Kenichi Saika,
Satoshi Hamao,
Yuki Majima,
Xiang Huang,
Hideki Matsuoka,
Satoshi Yoshida,
Miho Kitamura,
Masato Sakano,
Tatsuto Hatanaka,
Takuya Nomoto,
Motoaki Hirayama,
Koji Horiba,
Hiroshi Kumigashira,
Ryotaro Arita,
Yoshihiro Iwasa,
Masaki Nakano,
Kyoko Ishizaka
Abstract:
In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental…
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In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental evidence of the Weyl crossing shows Cr1/3NbSe2 to be a topological ferromagnet. This work highlights I-TMDC as platform towards the interplay of magnetic and topological physics in low-dimensional systems.
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Submitted 30 October, 2022;
originally announced October 2022.
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Spontaneous spin-valley polarization in NbSe2 at a van der Waals interface
Authors:
Hideki Matsuoka,
Tetsuro Habe,
Yoshihiro Iwasa,
Mikito Koshino,
Masaki Nakano
Abstract:
A proximity effect at a van der Waals (vdW) interface enables creation of an emergent quantum electronic ground state. Here we demonstrate that an originally-superconducting two-dimensional (2D) NbSe2 forms a ferromagnetic ground state with spontaneous spin polarization at a vdW interface with a 2D ferromagnet V5Se8. We investigated the anomalous Hall effect (AHE) of the NbSe2/V5Se8 magnetic vdW h…
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A proximity effect at a van der Waals (vdW) interface enables creation of an emergent quantum electronic ground state. Here we demonstrate that an originally-superconducting two-dimensional (2D) NbSe2 forms a ferromagnetic ground state with spontaneous spin polarization at a vdW interface with a 2D ferromagnet V5Se8. We investigated the anomalous Hall effect (AHE) of the NbSe2/V5Se8 magnetic vdW heterostructures, and found that the sign of the AHE was reversed as the number of the V5Se8 layer was thinned down to the monolayer limit. Interestingly, the AHE signal of those samples was enhanced with the in-plane magnetic fields, suggesting an additional contribution to the AHE signal other than magnetization. This unusual behavior is well reproduced by band structure calculations, where the emergence of the Berry curvature along the spin-degenerate nodal lines in 2D NbSe2 by the in-plane magnetization plays a key role, unveiling a unique interplay between magnetism and Zeeman-type spin-orbit interaction in a non-centrosymmetric 2D quantum material.
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Submitted 30 August, 2022; v1 submitted 28 August, 2022;
originally announced August 2022.
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Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films
Authors:
Masaki Nakano,
Yue Wang,
Satoshi Yoshida,
Hideki Matsuoka,
Yuki Majima,
Keisuke Ikeda,
Yasuyuki Hirata,
Yukiharu Takeda,
Hiroki Wadati,
Yoshimitsu Kohama,
Yuta Ohigashi,
Masato Sakano,
Kyoko Ishizaka,
Yoshihiro Iwasa
Abstract:
The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals…
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The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.
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Submitted 4 October, 2019;
originally announced October 2019.
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Signatures of charge-order correlations in transport properties of electron-doped cuprate superconductors
Authors:
Hideki Matsuoka,
Masaki Nakano,
Masaki Uchida,
Masashi Kawasaki,
Yoshihiro Iwasa
Abstract:
The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been…
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The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been so far detected mainly by x-ray scattering measurements. Here we show signatures of CO correlations in transport properties of electron-doped cuprates as anomalous enhancement of the metal-to-insulator crossover temperature (Tmin) appears in the limited doping range near the onset of superconductivity, while it decreases exactly when superconductivity sets in. We explain this non-monotonous peak-like behavior of Tmin in terms of the evolution of the electronic states through development of CO correlations and appearance of the hole pockets in the folded Fermi surface, which impact on transport properties consecutively at different locations in the momentum space.
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Submitted 20 September, 2018;
originally announced September 2018.
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Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy
Authors:
Masaki Nakano,
Yue Wang,
Yuta Kashiwabara,
Hideki Matsuoka,
Yoshihiro Iwasa
Abstract:
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication r…
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Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication routes have been mechanical exfoliation and chemical-vapor deposition by making good use of weak van der Waals bonding nature between neighboring layers, and MBE growth of 2D materials, in particular on insulating substrates for transport measurements, has been limited despite its fundamental importance for future advanced research. Here we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE, and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDC, providing a key milestone toward fabrication of van der Waals heterostructures with various 2D materials for novel properties and functionalities.
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Submitted 9 September, 2017;
originally announced September 2017.
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Studies on the Magnetic Ground State of a Spin Möbius Strip
Authors:
Graham N. Newton,
Norihisa Hoshino,
Takuto Matsumoto,
Takuya Shiga,
Motohiro Nakano,
Hiroyuki Nojiri,
Wolfgang Wernsdorfer,
Yuji Furukawa,
Hiroki Oshio
Abstract:
Here we report the synthesis, structure and detailed characterisation of three n-membered oxovanadium rings, Na$_n$[(V=O)$_n$Na$_n$(H$_2$O)$_n$($α$, $β$, or $γ$-CD)$_2$]$m$H$_2$O (n = 6, 7, or 8), prepared by the reactions of (V=O)SO$_4$$\cdot$$x$H$_2$O with $α$, $β$, or $γ$-cyclodextrins (CDs) and NaOH in water. Their alternating heterometallic vanadium/sodium cyclic core structures were sandwich…
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Here we report the synthesis, structure and detailed characterisation of three n-membered oxovanadium rings, Na$_n$[(V=O)$_n$Na$_n$(H$_2$O)$_n$($α$, $β$, or $γ$-CD)$_2$]$m$H$_2$O (n = 6, 7, or 8), prepared by the reactions of (V=O)SO$_4$$\cdot$$x$H$_2$O with $α$, $β$, or $γ$-cyclodextrins (CDs) and NaOH in water. Their alternating heterometallic vanadium/sodium cyclic core structures were sandwiched between two CD moieties such that O-Na-O groups separated neighbouring vanadyl ions. Antiferromagnetic interactions between the $S$ = 1/2 vanadyl ions led to $S$ = 0 ground states for the even-membered rings, but to two quasi-degenerate $S$ = 1/2 states for the spin-frustrated heptanuclear cluster.
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Submitted 20 July, 2016;
originally announced July 2016.
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Direct observation of the lattice dynamics of transition metals using ultrafast electron diffraction
Authors:
A. Nakamura,
T. Shimojima,
M. Nakano,
Y. Iwasa,
K. Ishizaka
Abstract:
We report the lattice dynamics of transition metal thin films by using the ultrafast electron diffraction. We observe a suppression of the diffraction intensity in a few picosecond after the photoexcitation, which is directly interpreted as the lattice heating via the electron-phonon interaction. The electron-phonon coupling constants for Au, Cu and Mo are quantitatively evaluated by employing the…
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We report the lattice dynamics of transition metal thin films by using the ultrafast electron diffraction. We observe a suppression of the diffraction intensity in a few picosecond after the photoexcitation, which is directly interpreted as the lattice heating via the electron-phonon interaction. The electron-phonon coupling constants for Au, Cu and Mo are quantitatively evaluated by employing the two-temperature model, which are consistent with those obtained by optical pump-probe methods. The variation in the lattice dynamics of the transition metals are systematically explained by the strength of the electron-phonon coupling, arising from the elemental dependence of the electronic structure and atomic mass.
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Submitted 18 January, 2016;
originally announced January 2016.
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Memristive phase switching in two-dimensional crystals
Authors:
Masaro Yoshida,
Ryuji Suzuki,
Yijin Zhang,
Masaki Nakano,
Yoshihiro Iwasa
Abstract:
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significa…
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Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significantly changed from bulk systems. However, there are few attempts to realize novel phenomena in correlated 2D crystals. Here, we report memristive phase switching in nano-thick crystals of 1T-type tantalum disulfide (1T-TaS2), a first-order phase transition system. The ordering kinetics of the phase transition was revealed to become extremely slow as the thickness is reduced, resulting in an emergence of metastable states. Furthermore, we realized the unprecedented memristive switching to multi-step non-volatile states by applying in-plane electric field. The reduction of thickness is essential to achieve such non-volatile electrical switching behavior. The thinning-induced slow kinetics possibly makes the various metastable states robust and consequently realizes the non-volatile memory operation. The present result indicates that 2D crystal with correlated electrons is a novel nano-system to explore and functionalize multiple metastable states which are inaccessible in its bulk form.
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Submitted 15 May, 2015;
originally announced May 2015.
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Effects of Bridge Functions on Radial Distribution Functions of Liquid Water
Authors:
Shigenori Tanaka,
Miki Nakano
Abstract:
In this report the radial distribution functions (RDFs) of liquid water are calculated on the basis of the classical density functional theory combined with the reference interaction site model for molecular liquids. The bridge functions, which are neglected in the hypernetted-chain (HNC) approximation, are taken into account through the density expansion for the Helmholtz free energy functional u…
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In this report the radial distribution functions (RDFs) of liquid water are calculated on the basis of the classical density functional theory combined with the reference interaction site model for molecular liquids. The bridge functions, which are neglected in the hypernetted-chain (HNC) approximation, are taken into account through the density expansion for the Helmholtz free energy functional up to the third order. A factorization approximation to the ternary direct correlation functions in terms of the site-site pair correlation functions is then employed in the expression of the bridge functions, thus leading to a closed set of integral equations for the determination of the RDFs. It is confirmed through numerical calculations that incorporation of the oxygen-oxygen bridge function substantially improves the poor descriptions by the HNC approximation at room temperature, e.g., for the second peak of the oxygen-oxygen RDF.
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Submitted 22 May, 2014;
originally announced May 2014.
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A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel
Authors:
Hiroshi M. Yamamoto,
Masaki Nakano,
Masayuki Suda,
Yoshihiro Iwasa,
Masashi Kawasaki,
Reizo Kato
Abstract:
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces.…
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In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.
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Submitted 2 September, 2013;
originally announced September 2013.
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Single-Crystal Organic Charge-Transfer Interfaces probed using Schottky-Gated Heterostructures
Authors:
Ignacio Gutiérrez Lezama,
Masaki Nakano,
Nikolas A. Minder,
Zhihua Chen,
Flavia V. Di Girolamo,
Antonio Facchetti,
Alberto F. Morpurgo,
.
Abstract:
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Sch…
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Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Schottky-gated heterostructures to probe the conducting layer at the interface between rubrene and PDIF-CN2 single crystals. Gate-modulated conductivity measurements demonstrate that interfacial transport is due to electrons, whose mobility exhibits band-like behavior from room temperature to ~ 150 K, and remains as high as ~ 1 cm2V-1s-1 at 30 K for the best devices. The electron density decreases linearly with decreasing temperature, an observation that can be explained quantitatively based on the heterostructure band diagram. These results elucidate the electronic structure of rubrene-PDIF-CN2 interfaces and show the potential of Schottky-gated organic heterostructures for the investigation of transport in molecular semiconductors.
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Submitted 8 February, 2013;
originally announced February 2013.
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Small gap semiconducting organic charge-transfer interfaces
Authors:
M. Nakano,
H. Alves,
A. S. Molinari,
S. Ono,
N. Minder,
A. F. Morpurgo
Abstract:
We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have un-measurably high resistance, the interface exhibits a resistivity of few tens of MegaOhm with a temperature dependence characteristic of a small…
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We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have un-measurably high resistance, the interface exhibits a resistivity of few tens of MegaOhm with a temperature dependence characteristic of a small gap semiconductor. We analyze the transport properties based on a simple band-diagram that naturally accounts for our observations in terms of charge transfer between two crystals. Together with the recently discovered tetrathiafulvalene (TTF)-TCNQ interfaces, these results indicate that single-crystal organic heterostructures create new electronic systems with properties relevant to both fundamental and applied fields.
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Submitted 22 April, 2010;
originally announced April 2010.
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Magnetic-field-induced spin-crossover transition in [Mn$^{\textrm{III}}$(taa)] studied by X-ray absorption spectroscopy
Authors:
Jim Long Her,
Yasuhiro H. Matsuda,
Motohiro Nakano,
Yasuhiro Niwa,
Yasuhiro Inada
Abstract:
The X-ray absorption near-edge structure (XANES) of Mn in a spin-crossover compound, [Mn$^{\textrm{III}}$(taa)], was studied in pulsed high magnetic fields up to 37T. By applying magnetic fields to the low-temperature low-spin (LS) state, significant changes in the spectra were observed, suggesting a magnetic-field-induced spin-crossover to the high-spin (HS) state. At low temperatures, the magnet…
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The X-ray absorption near-edge structure (XANES) of Mn in a spin-crossover compound, [Mn$^{\textrm{III}}$(taa)], was studied in pulsed high magnetic fields up to 37T. By applying magnetic fields to the low-temperature low-spin (LS) state, significant changes in the spectra were observed, suggesting a magnetic-field-induced spin-crossover to the high-spin (HS) state. At low temperatures, the magnetic field dependence of the changes in the spectra exhibited hysteresis. Furthermore, when the magnetic field was set to zero, a considerable remanent component was observed. The energy barrier of the HS $\to$ LS transition was evaluated from the temperature dependence of the decay time of the remanent signal. The energy barrier of the transition was found to be 134K, which is notably lower than that for other spin-crossover compounds reported previously. Since the fraction of the field-induced HS state was at most 30% and the thermodynamic macroscopic field-induced phase transition was expected to occur in fields higher than 55T, the observed field-induced transition at low temperatures down to 17K could be understood as a localized microscopic transition at the single-molecular level.
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Submitted 4 April, 2010;
originally announced April 2010.
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Room Temperature Ferromagnetic Semiconductor Rutile Ti1-xCoxO2-δEpitaxial Thin Films Grown by Sputtering Method
Authors:
Takashi Yamasaki,
Tomoteru Fukumura,
Masaki Nakano,
Kazunori Ueno,
Masashi Kawasaki
Abstract:
Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent wit…
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Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent with the high spin state Co2+ in this compound recently established by spectroscopic methods. Consequently, its originally large magneto-optical response is further enhanced.
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Submitted 1 November, 2008;
originally announced November 2008.
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Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2
Authors:
T Fukumura,
H Toyosaki,
K Ueno,
M Nakano,
M Kawasaki
Abstract:
Electric and magnetic properties of a high temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism, and anomalous Hall effect measuremen…
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Electric and magnetic properties of a high temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism, and anomalous Hall effect measurements were examined for samples with systematically varied electron densities and cobalt contents. The samples with high electron densities and cobalt contents show the high temperature ferromagnetism, suggesting that charge carriers induce the ferromagnetism.
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Submitted 24 May, 2008;
originally announced May 2008.
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A scaling relation of anomalous Hall effect in ferromagnetic semiconductors and metals
Authors:
Tomoteru Fukumura,
Hidemi Toyosaki,
Kazunori Ueno,
Masaki Nakano,
Takashi Yamasaki,
Masashi Kawasaki
Abstract:
A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional…
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A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional to sigma_xx_^1.6, that is coincident with a recent theory. This relation is valid over five decades of sigma_xx_ irrespective of metallic or hopping conduction.
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Submitted 20 June, 2007;
originally announced June 2007.
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Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime
Authors:
Kazunori Ueno,
Tomoteru Fukumura,
Hidemi Toyosaki,
Masaki Nakano,
Masashi Kawasaki
Abstract:
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportion…
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Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-xCoxO2 also follows a scaling relationship to conductivity sigma_xx as sigma_AHE ~ sigma_xx^1.6, which was observed for another polymorph rutile Ti1-xCoxO2, suggesting an identical mechanism of their AHE.
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Submitted 13 February, 2007; v1 submitted 16 January, 2007;
originally announced January 2007.
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Limitations of the Giant Spin Hamiltonian in Explaining Magnetization Tunneling in a Single-Molecule Magnet
Authors:
A. Wilson,
J. Lawrence,
E-C. Yang,
M. Nakano,
D. N. Hendrickson,
S. Hill
Abstract:
EPR studies of a Ni4 single-molecule magnet yield the zero-field-splitting (zfs) parameters, D, B40 and B44, based on a giant spin approximation (GSA) with S = 4. Experiments on an isostructural Ni-doped Zn4 crystal establish the Ni(II) ion zfs parameters. The 4th-order zfs parameters in the GSA arise from the interplay between the Heisenberg interaction, Js1.s2, and the 2nd-order single-ion ani…
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EPR studies of a Ni4 single-molecule magnet yield the zero-field-splitting (zfs) parameters, D, B40 and B44, based on a giant spin approximation (GSA) with S = 4. Experiments on an isostructural Ni-doped Zn4 crystal establish the Ni(II) ion zfs parameters. The 4th-order zfs parameters in the GSA arise from the interplay between the Heisenberg interaction, Js1.s2, and the 2nd-order single-ion anisotropy, giving rise to mixing of higher lying states into the S = 4 state. Consequently, J directly influences the zfs in the ground state, enabling its direct determination by EPR.
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Submitted 9 June, 2006;
originally announced June 2006.
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A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction
Authors:
H. Toyosaki,
T. Fukumura,
K. Ueno,
M. Nakano,
M. Kawasaki
Abstract:
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR act…
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A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
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Submitted 6 July, 2005;
originally announced July 2005.
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Effects of Paramagnetic Ferrocenium Cations on the Magnetic Properties of the Anionic Single-Molecule Magnet [Mn12O12(O2CC6F5)16(H2O)4]-
Authors:
Takayoshi Kuroda-Sowa,
Matthew Lam,
Arnold L. Rheingold,
Christoph Frommen,
William M. Reiff,
Motohiro Nakano,
Jae Yoo,
A. L. Maniero,
Louis-Claude Brunel,
George Christou,
David N. Hendrickson
Abstract:
The preparation and physical characterization are reported for several single-molecule magnet salts to investigate the effects of paramagnetic cations on the magnetization relaxation behavior of [Mn12]- anionic single-molecule magnets.
The preparation and physical characterization are reported for several single-molecule magnet salts to investigate the effects of paramagnetic cations on the magnetization relaxation behavior of [Mn12]- anionic single-molecule magnets.
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Submitted 10 October, 2001; v1 submitted 8 October, 2001;
originally announced October 2001.
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Mixed-Valence Tetranuclear Manganese Single-Molecule Magnets
Authors:
Jae Yoo,
Akira Yamaguchi,
Motohiro Nakano,
J. Krzystek,
William E. Streib,
Louis-Claude Brunel,
Hidehiko Ishimoto,
George Christou,
David N. Hendrickson
Abstract:
The preparations, X-ray structures, and detailed physical characterizations are presented for two new mixed-valence tetranuclear manganese complexes that function as single-molecule magnets (SMM's): [Mn4(hmp)6Br2(H2O)2]Br2.4H2O and [Mn4(6-me-hmp)6Cl4].4H2O, where hmp- is the anion of 2-hydroxymethylpyridine and 6-me-hmp- is the anion of 6-methyl-2-hydroxymethylpyridine.
The preparations, X-ray structures, and detailed physical characterizations are presented for two new mixed-valence tetranuclear manganese complexes that function as single-molecule magnets (SMM's): [Mn4(hmp)6Br2(H2O)2]Br2.4H2O and [Mn4(6-me-hmp)6Cl4].4H2O, where hmp- is the anion of 2-hydroxymethylpyridine and 6-me-hmp- is the anion of 6-methyl-2-hydroxymethylpyridine.
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Submitted 26 September, 2001;
originally announced September 2001.
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The First Cobalt Single-Molecule Magnet
Authors:
En-Che Yang,
David N Hendrickson,
Wolfgang Wernsdorfer,
Motohiro Nakano,
Roger Sommer,
Arnold L Rheingold,
Marisol Ledezma-Gairaud,
George Christou
Abstract:
The first cobalt molecule to function as a single-molecule magnet, [Co4(hmp)4(MeOH)4Cl4], where hmp- is the anion of hydroxymethylpyridine, is reported. The core of the molecule consists of four Co(II) cations and four hmp- oxygen atoms ions at the corners of a cube. Variable-field and variable-temperature magnetization data have been analyzed to establish that the molecule has a S=6 ground stat…
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The first cobalt molecule to function as a single-molecule magnet, [Co4(hmp)4(MeOH)4Cl4], where hmp- is the anion of hydroxymethylpyridine, is reported. The core of the molecule consists of four Co(II) cations and four hmp- oxygen atoms ions at the corners of a cube. Variable-field and variable-temperature magnetization data have been analyzed to establish that the molecule has a S=6 ground state with considerable negative magnetoanisotropy. Single-ion zero-field interactions (DSz2) at each cobalt ion are the origin of the negative magnetoanisotropy. A single-crystal of the compound was studied by means of a micro-SQUID magnetometer in the range of 0.040-1.0K. Hysteresis was found in the magnetization versus magnetic field response of this single crystal. It is concluded that this is the first cobalt molecule to function as a single-molecule magnet.
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Submitted 12 September, 2001;
originally announced September 2001.
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Nonlinear effects in Schwinger-Dyson Equation
Authors:
Hiroaki Kouno,
Akira Hasegawa,
Masahiro Nakano,
Kunito Tuchitani
Abstract:
We study nonlinear effects in the QED ladder Schwinger-Dyson(SD) equation. Without further approximations, we show that all nonlinear effects in the ladder SD equation can be included in the effective couplings and how a linear approximation works well. The analyses is generalized in the case of the improved ladder calculation with the Higashijima-Miransky approximation.
We study nonlinear effects in the QED ladder Schwinger-Dyson(SD) equation. Without further approximations, we show that all nonlinear effects in the ladder SD equation can be included in the effective couplings and how a linear approximation works well. The analyses is generalized in the case of the improved ladder calculation with the Higashijima-Miransky approximation.
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Submitted 28 June, 1999;
originally announced June 1999.