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An exactly solvable model for emergence and scaling laws
Authors:
Yoonsoo Nam,
Nayara Fonseca,
Seok Hyeong Lee,
Chris Mingard,
Ard A. Louis
Abstract:
Deep learning models can exhibit what appears to be a sudden ability to solve a new problem as training time, training data, or model size increases, a phenomenon known as emergence. In this paper, we present a framework where each new ability (a skill) is represented as a basis function. We solve a simple multi-linear model in this skill-basis, finding analytic expressions for the emergence of ne…
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Deep learning models can exhibit what appears to be a sudden ability to solve a new problem as training time, training data, or model size increases, a phenomenon known as emergence. In this paper, we present a framework where each new ability (a skill) is represented as a basis function. We solve a simple multi-linear model in this skill-basis, finding analytic expressions for the emergence of new skills, as well as for scaling laws of the loss with training time, data size, model size, and optimal compute ($C$). We compare our detailed calculations to direct simulations of a two-layer neural network trained on multitask sparse parity, where the tasks in the dataset are distributed according to a power-law. Our simple model captures, using a single fit parameter, the sigmoidal emergence of multiple new skills as training time, data size or model size increases in the neural network.
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Submitted 14 July, 2024; v1 submitted 26 April, 2024;
originally announced April 2024.
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Quantum-centric Supercomputing for Materials Science: A Perspective on Challenges and Future Directions
Authors:
Yuri Alexeev,
Maximilian Amsler,
Paul Baity,
Marco Antonio Barroca,
Sanzio Bassini,
Torey Battelle,
Daan Camps,
David Casanova,
Young jai Choi,
Frederic T. Chong,
Charles Chung,
Chris Codella,
Antonio D. Corcoles,
James Cruise,
Alberto Di Meglio,
Jonathan Dubois,
Ivan Duran,
Thomas Eckl,
Sophia Economou,
Stephan Eidenbenz,
Bruce Elmegreen,
Clyde Fare,
Ismael Faro,
Cristina Sanz Fernández,
Rodrigo Neumann Barros Ferreira
, et al. (102 additional authors not shown)
Abstract:
Computational models are an essential tool for the design, characterization, and discovery of novel materials. Hard computational tasks in materials science stretch the limits of existing high-performance supercomputing centers, consuming much of their simulation, analysis, and data resources. Quantum computing, on the other hand, is an emerging technology with the potential to accelerate many of…
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Computational models are an essential tool for the design, characterization, and discovery of novel materials. Hard computational tasks in materials science stretch the limits of existing high-performance supercomputing centers, consuming much of their simulation, analysis, and data resources. Quantum computing, on the other hand, is an emerging technology with the potential to accelerate many of the computational tasks needed for materials science. In order to do that, the quantum technology must interact with conventional high-performance computing in several ways: approximate results validation, identification of hard problems, and synergies in quantum-centric supercomputing. In this paper, we provide a perspective on how quantum-centric supercomputing can help address critical computational problems in materials science, the challenges to face in order to solve representative use cases, and new suggested directions.
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Submitted 14 December, 2023;
originally announced December 2023.
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Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels
Authors:
Hyeon Han,
Quentin Jacquet,
Zhen Jiang,
Farheen N. Sayed,
Arpit Sharma,
Aaron M. Schankler,
Arvin Kakekhani,
Holger L. Meyerheim,
Jae-Chun Jeon,
Jucheol Park,
Sang Yeol Nam,
Kent J. Griffith,
Laura Simonelli,
Andrew M. Rappe,
Clare P. Grey,
Stuart S. P. Parkin
Abstract:
The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its elec…
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The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, likely due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration which we show gives rise to a colossal insulator-metal transition where the resistivity drops by eleven orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, that allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way to the exploration of novel thin films with ionic channels and their potential applications.
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Submitted 2 August, 2023; v1 submitted 7 March, 2022;
originally announced March 2022.
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Interactive Protocols for Classically-Verifiable Quantum Advantage
Authors:
Daiwei Zhu,
Gregory D. Kahanamoku-Meyer,
Laura Lewis,
Crystal Noel,
Or Katz,
Bahaa Harraz,
Qingfeng Wang,
Andrew Risinger,
Lei Feng,
Debopriyo Biswas,
Laird Egan,
Alexandru Gheorghiu,
Yunseong Nam,
Thomas Vidick,
Umesh Vazirani,
Norman Y. Yao,
Marko Cetina,
Christopher Monroe
Abstract:
Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but…
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Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but require more resources than what is available on near-term devices. One way to bridge the gap between verifiability and implementation is to use "interactions" between a prover and a verifier. By leveraging cryptographic functions, such protocols enable the classical verifier to enforce consistency in a quantum prover's responses across multiple rounds of interaction. In this work, we demonstrate the first implementation of an interactive quantum advantage protocol, using an ion trap quantum computer. We execute two complementary protocols -- one based upon the learning with errors problem and another where the cryptographic construction implements a computational Bell test. To perform multiple rounds of interaction, we implement mid-circuit measurements on a subset of trapped ion qubits, with subsequent coherent evolution. For both protocols, the performance exceeds the asymptotic bound for classical behavior; maintaining this fidelity at scale would conclusively demonstrate verifiable quantum advantage.
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Submitted 21 June, 2022; v1 submitted 9 December, 2021;
originally announced December 2021.
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Template Dissolution Interfacial Patterning of Single Colloids for Nanoelectrochemistry and Nanosensing
Authors:
Joong Bum Lee,
Harriet Walker,
Yi Li,
Tae Won Nam,
Aliaksandra Rakovich,
Riccardo Sapienza,
Yeon Sik Jung,
Yoon Sung Nam,
Stefan A. Maier,
Emiliano Cortés
Abstract:
Deterministic positioning and assembly of colloidal nanoparticles (NPs) onto substrates is a core requirement and a promising alternative to top down lithography to create functional nanostructures and nanodevices with intriguing optical, electrical, and catalytic features. Capillary-assisted particle assembly (CAPA) has emerged as an attractive technique to this end, as it allows controlled and s…
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Deterministic positioning and assembly of colloidal nanoparticles (NPs) onto substrates is a core requirement and a promising alternative to top down lithography to create functional nanostructures and nanodevices with intriguing optical, electrical, and catalytic features. Capillary-assisted particle assembly (CAPA) has emerged as an attractive technique to this end, as it allows controlled and selective assembly of a wide variety of NPs onto predefined topographical templates using capillary forces. One critical issue with CAPA, however, lies in its final printing step, where high printing yields are possible only with the use of an adhesive polymer film. To address this problem, we have developed a template dissolution interfacial patterning (TDIP) technique to assemble and print single colloidal AuNP arrays onto various dielectric and conductive substrates in the absence of any adhesion layer, with printing yields higher than 98%. The TDIP approach grants direct access to the interface between the AuNP and the target surface, enabling the use of colloidal AuNPs as building blocks for practical applications. The versatile applicability of TDIP is demonstrated by the creation of direct electrical junctions for electro- and photoelectrochemistry and nanoparticle-on-mirror geometries for single particle molecular sensing.
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Submitted 25 August, 2021;
originally announced September 2021.
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A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers
Authors:
Youngwoo Nam,
Dong-Keun Ki,
David Soler-Delgado,
Alberto F. Morpurgo
Abstract:
Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspir…
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Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspired by a mean field approach suggests that the transition is associated with the appearance of a self-consistent valley- and spin-dependent staggered potential changing sign from one layer to the next, appearing at Tc and increasing upon cooling. The systematic evolution with thickness of several measured quantities imposes constraints on any microscopic theory aiming to analyze the nature of electronic correlations in this system.
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Submitted 26 November, 2018;
originally announced November 2018.
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Quantitative agreement of Dzyaloshinskii-Moriya interactions for domain-wall motion and spin-wave propagation
Authors:
Dae-Yun Kim,
Nam-Hui Kim,
Yong-Keun Park,
Min-Ho Park,
Joo-Sung Kim,
Yune-Seok Nam,
Jinyong Jung,
Jaehun Cho,
Duck-Ho Kim,
June-Seo Kim,
Byoung-Chul Min,
Sug-Bong Choe,
Chun-Yeol You
Abstract:
The magnetic exchange interaction is the one of the key factors governing the basic characteristics of magnetic systems. Unlike the symmetric nature of the Heisenberg exchange interaction, the interfacial Dzyaloshinskii-Moriya interaction (DMI) generates an antisymmetric exchange interaction which offers challenging opportunities in spintronics with intriguing antisymmetric phenomena. The role of…
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The magnetic exchange interaction is the one of the key factors governing the basic characteristics of magnetic systems. Unlike the symmetric nature of the Heisenberg exchange interaction, the interfacial Dzyaloshinskii-Moriya interaction (DMI) generates an antisymmetric exchange interaction which offers challenging opportunities in spintronics with intriguing antisymmetric phenomena. The role of the DMI, however, is still being debated, largely because distinct strengths of DMI have been measured for different magnetic objects, particularly chiral magnetic domain walls (DWs) and non-reciprocal spin waves (SWs). In this paper, we show that, after careful data analysis, both the DWs and SWs experience the same strength of DMI. This was confirmed by spin-torque efficiency measurement for the DWs, and Brillouin light scattering measurement for the SWs. This observation, therefore, indicates the unique role of the DMI on the magnetic DW and SW dynamics and also guarantees the compatibility of several DMI-measurement schemes recently proposed.
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Submitted 10 October, 2018;
originally announced October 2018.
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Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps
Authors:
Hyeon Han,
Donghoon Kim,
Ji Hyun Lee,
Jucheol Park,
Sang Yeol Nam,
Mingi Choi,
Kijung Yong,
Hyun Myung Jang
Abstract:
Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic…
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Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrow band gaps of ~1.2 eV, where R denotes rare-earth ions. FPVs with narrow band gaps suggests their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations, which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive on the magnitude of polarization. In the case of h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. We have further shown that the switchable photovoltaic effect dominates over the unswitchable internal field effect arising from the net built-in potential. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.
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Submitted 8 November, 2017;
originally announced November 2017.
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Empirical correlation between the interfacial Dzyaloshinskii Moriya interaction and work function in metallic magnetic trilayers
Authors:
Yong-Keun Park,
Dae-Yun Kim,
Joo-Sung Kim,
Yune-Seok Nam,
Min-Ho Park,
Hyeok-Cheol Choi,
Byoung-Chul Min,
Sug-Bong Choe
Abstract:
The Dzyaloshinskii Moriya interaction (DMI) generates intriguing chiral magnetic objects such as magnetic skyrmions and chiral domain walls that can be used as building blocks in emerging magnetic nanodevices. To achieve better stability and functionality of these chiral objects, it is essential to achieve a larger DMI. In this paper, we report an experimental observation that in magnetic trilayer…
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The Dzyaloshinskii Moriya interaction (DMI) generates intriguing chiral magnetic objects such as magnetic skyrmions and chiral domain walls that can be used as building blocks in emerging magnetic nanodevices. To achieve better stability and functionality of these chiral objects, it is essential to achieve a larger DMI. In this paper, we report an experimental observation that in magnetic trilayer films, the DMI strength is mainly determined by the work functions of the nonmagnetic layers interfaced with the magnetic layer. The clear correlation with the intrinsic material parameters provides a guideline for material selection to engineer the DMI strength.
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Submitted 18 October, 2017;
originally announced October 2017.
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Magnetic Domain-Wall Tilting due to Domain-Wall Speed Asymmetry
Authors:
Dae-Yun Kim,
Min-Ho Park,
Yong-Keun Park,
Joo-Sung Kim,
Yoon-Seok Nam,
Hyun-Seok Hwang,
Hyeok-Cheol Choi,
Duck-Ho Kim,
Soong-Geun Je,
Byoung-Chul Min,
Sug-Bong Choe
Abstract:
Chiral magnetic materials provide a number of challenging issues such as the highly efficient domain wall (DW) and skyrmion motions driven by electric current, as of the operation principles of emerging spintronic devices. The DWs in the chiral materials exhibit asymmetric DW speed variation under application of in plane magnetic field. Here, we show that such DW speed asymmetry causes the DW tilt…
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Chiral magnetic materials provide a number of challenging issues such as the highly efficient domain wall (DW) and skyrmion motions driven by electric current, as of the operation principles of emerging spintronic devices. The DWs in the chiral materials exhibit asymmetric DW speed variation under application of in plane magnetic field. Here, we show that such DW speed asymmetry causes the DW tilting during the motion along wire structure. It has been known that the DW tilting can be induced by the direct Zeeman interaction of the DW magnetization under application of in plane magnetic field. However, our experimental observations manifests that there exists another dominant process with the DW speed asymmetry caused by either the Dzyaloshinskii Moriya interaction (DMI) or the chirality dependent DW speed variation. A theoretical model based on the DW geometry reveals that the DW tilting is initiated by the DW pinning at wire edges and then, the direction of the DW tilting is determined by the DW speed asymmetry, as confirmed by a numerical simulation. The present observation reveals the decisive role of the DW pinning with the DW speed asymmetry, which determines the DW geometry and consequently, the dynamics.
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Submitted 25 June, 2017; v1 submitted 27 April, 2017;
originally announced April 2017.
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Chirality-induced Antisymmetry in Magnetic Domain-Wall Speed
Authors:
Dae-Yun Kim,
Min-Ho Park,
Yong-Keun Park,
Joo-Sung Kim,
Yoon-Seok Nam,
Duck-Ho Kim,
Soong-Geun Je,
Byoung-Chul Min,
Sug-Bong Choe
Abstract:
In chiral magnetic materials, numerous intriguing phenomena such as built in chiral magnetic domain walls (DWs) and skyrmions are generated by the Dzyaloshinskii Moriya interaction (DMI). The DMI also results in asymmetric DW speed under in plane magnetic field, which provides a useful scheme to measure the DMI strengths. However, recent findings of additional asymmetries such as chiral damping ha…
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In chiral magnetic materials, numerous intriguing phenomena such as built in chiral magnetic domain walls (DWs) and skyrmions are generated by the Dzyaloshinskii Moriya interaction (DMI). The DMI also results in asymmetric DW speed under in plane magnetic field, which provides a useful scheme to measure the DMI strengths. However, recent findings of additional asymmetries such as chiral damping have disenabled unambiguous DMI determination and the underlying mechanism of overall asymmetries becomes under debate. By extracting the DMI-induced symmetric contribution, here we experimentally investigated the nature of the additional asymmetry. The results revealed that the additional asymmetry has a truly antisymmetric nature with the typical behavior governed by the DW chirality. In addition, the antisymmetric contribution changes the DW speed more than 100 times, which cannot be solely explained by the chiral damping scenario. By calibrating such antisymmetric contributions, experimental inaccuracies can be largely removed, enabling again the DMI measurement scheme.
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Submitted 27 April, 2017;
originally announced April 2017.
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Electron-hole collision limited transport in charge-neutral bilayer graphene
Authors:
Youngwoo Nam,
Dong-Keun Ki,
David Soler-Delgado,
Alberto F. Morpurgo
Abstract:
Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impuriti…
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Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.
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Submitted 24 April, 2018; v1 submitted 15 March, 2017;
originally announced March 2017.
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Interaction-induced insulating state in thick multilayer graphene
Authors:
Youngwoo Nam,
Dong-Keun Ki,
Mikito Koshino,
Edward McCann,
Alberto F. Morpurgo
Abstract:
Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with…
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Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with the established notion that (Bernal) trilayers and thicker multilayers are semi-metals$-$ have resulted in the proposal of a physical scenario leading to a surprising prediction, namely that even-layered graphene multilayers remain insulating irrespective of their thickness. Here, we present data from two devices that conform ideally to this hypothesis, exhibiting the behavior expected for Bernal-stacked hexa and octalayer graphene. Despite their large thickness, these multilayers are insulating for carrier density |n|<2-3x10$^{10}$cm$^{-2}$, possess an energy gap of approximately 1.5 meV at charge neutrality (in virtually perfect agreement with what is observed in bi and tetra layer graphene) and exhibit the expected integer quantum Hall effect. These findings indicate the soundness of our basic insights on the effect of electron interactions in Bernal graphene multilayers, show that graphene multilayers exhibit unusual and interesting physics that remains to be understood, and pose ever more pressing questions as to the microscopic mechanisms behind the semimetallic behavior of bulk graphite.
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Submitted 4 October, 2016;
originally announced October 2016.
