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Network-theory based modeling of avalanche dynamics in percolative tunnelling networks
Authors:
Vivek Dey,
Steffen Kampman,
Rafael Gutierrez,
Gianaurelio Cuniberti,
Pavan Nukala
Abstract:
Brain-like self-assembled networks can infer and analyze information out of unorganized noisy signals with minimal power consumption. These networks are characterized by spatiotemporal avalanches and their crackling behavior, and their physical models are expected to predict and understand their computational capabilities. Here, we use a network theory-based approach to provide a physical model fo…
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Brain-like self-assembled networks can infer and analyze information out of unorganized noisy signals with minimal power consumption. These networks are characterized by spatiotemporal avalanches and their crackling behavior, and their physical models are expected to predict and understand their computational capabilities. Here, we use a network theory-based approach to provide a physical model for percolative tunnelling networks, found in Ag-hBN system, consisting of nodes (atomic clusters) of Ag intercalated in the hBN van der Waals layers. By modeling a single edge plasticity through constitutive electrochemical filament formation, and annihilation through Joule heating, we identify independent parameters that determine the network connectivity. We construct a phase diagram and show that a small region of the parameter space contains signals which are long-range temporally correlated, and only a subset of them contains crackling avalanche dynamics. Physical systems spontaneously selforganize to this region for possibly maximizing the efficiency of information transfer.
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Submitted 29 April, 2024;
originally announced April 2024.
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Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Authors:
Jalaja M A,
Shubham Kumar Parate,
Binoy Krishna De,
Sai Dutt K,
Pavan Nukala
Abstract:
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled…
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On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled reversible polar to non-polar phase transition in thick La-doped hafnia (40 nm). This transition occurs between ~125 and 140 K and produces giant negative pyroelectric and electrocaloric effects. Refrigeration metrics were estimated between 120 to 200 K, with a peak refrigerant capacity of 25 kJ Kg-1 (2 kJ Kg-1), peak isothermal entropy ΔS~ 8 kJ Kg-1 K-1 (0.5 kJ Kg-1 K-1) and adiabatic ΔTcooling ~ 106 K (11 K) at ~140 K and 5 MV cm-1 (0.5 MV cm-1, and these are the largest reported in any electrocaloric system. Our work fundamentally proposes design guidelines to induce significant solid-state refrigeration through proximity effects, even at cryogenic temperatures relevant to quantum technologies.
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Submitted 27 March, 2024;
originally announced March 2024.
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Giant electrostriction in bulk RE (III) substituted CeO2: effect of RE 3+ and its concentration
Authors:
Soumyajyoti Mondal,
Pooja Punetha,
Rajeev Ranjan,
Pavan Nukala
Abstract:
Recent discovery of giant electrostriction in rare earth (RE (III)) substituted ceria (CeO2) thin films driven by electroactive defect complexes and their coordinated elastic response, expands the material spectrum for electrostrain applications beyond the conventional piezoelectric materials. Especially Gd substituted CeO2, with Gd concentration >10% seems to be an ideal material to obtain such l…
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Recent discovery of giant electrostriction in rare earth (RE (III)) substituted ceria (CeO2) thin films driven by electroactive defect complexes and their coordinated elastic response, expands the material spectrum for electrostrain applications beyond the conventional piezoelectric materials. Especially Gd substituted CeO2, with Gd concentration >10% seems to be an ideal material to obtain such large electrostrain response. However, there are not many experimental studies that systematically investigate the effect of RE (III) ion-defect interaction and RE concentration on electrostriction. Here we perform structure-property correlation studies in bulk ceramics of RE3+ substituted ceria doped with RE=Y, La and Gd at various concentrations upto a maximum of 20%, to understand the features responsible for giant electrostriction. Our results show that Y substituted ceria, with atleast 20% Y substitution, is clearly both a giant M and a Q electrostrictor at low frequencies (<20 Hz), and this correlates with the unique attractive defect-dopant interaction of Y with oxygen vacancies. La has a repulsive interaction with oxygen vacancies, and La doped ceria at all the studied compositions (upto 20%) does not show giant electrostiction. Gd has a neutral interaction, and only 20% Gd doped ceria at best falls at the border of classification between giant and non-giant electrostrictors at frequencies <0.05 Hz. Our work takes a step back from thin-films and assesses the fundamental defect features required in the design of giant electrostrictors.
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Submitted 23 September, 2023;
originally announced September 2023.
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Robust atmospherically stable hybrid SrVO3/Graphene//SrTiO3 template for fast and facile large-area transfer of complex oxides onto Si
Authors:
Asraful Haque,
Suman Kumar Mandal,
Antony Jeyaseelan,
Sandeep Vura,
Pavan Nukala,
Srinivasan Raghavan
Abstract:
Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less…
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Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers, without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We show that the graphene layer enhances the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3 (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.
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Submitted 6 July, 2023;
originally announced July 2023.
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Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors
Authors:
Upanya Khandelwal,
Qikai Guo,
Beatriz Noheda,
Pavan Nukala,
Saurabh Chandorkar
Abstract:
Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered a…
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Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway, insulator to metal phase transitions (IMT) can lead to such superlinearity and are being extensively studied in systems such as TaO$_x$, NbO$_x$ and VO$_2$. However, ReNiO$_3$ systems that offer large tunability in metal-insulator transition temperatures are less explored so far. Here we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency and low temperatures on thin films of NdNiO$_3$, a model charge transfer insulator, and their frequency coding behavior. We study the temperature dependence of NDR and show that it vanishes even at temperatures below the IMT temperature. We also show that the threshold voltages scale with device size and that a simple electrothermal device model captures all these salient features. In contrast to existing models, our model correctly predicts the independence of oscillation amplitude with the applied voltage, offering crucial insights about the nature of fixed points in the NDR region, and the dynamics of non-linear oscillations about them. KEYWORDS: NDR, oscillations, thermal model.
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Submitted 15 March, 2023;
originally announced March 2023.
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Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Authors:
Sandeep Vura,
Shubham Kumar Parate,
Subhajit Pal,
Upanya Khandelwal,
Rajeev Kumar Rai,
Sri Harsha Molleti,
Vishnu Kumar,
Rama Satya Sandilya Ventrapragada,
Girish Patil,
Mudit Jain,
Ambresh Mallya,
Majid Ahmadi,
Bart Kooi,
Sushobhan Avasthi,
Rajeev Ranjan,
Srinivasan Raghavan,
Saurabh Chandorkar,
Pavan Nukala
Abstract:
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o…
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Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.
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Submitted 6 March, 2023;
originally announced March 2023.
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Emergence of field-induced memory effect in spin ices
Authors:
Pramod K. Yadav,
Rajnikant Upadhyay,
Rahul Kumar,
Pavan Nukala,
Chandan Upadhyay
Abstract:
Out-of-equilibrium investigation of strongly correlated materials deciphers the hidden equilibrium properties. Herein, we have investigated the out-of-equilibrium magnetic properties of polycrystalline Dy2Ti2O7 and Ho2Ti2O7 spin ices. The experimental results show the emergence of magnetic field-induced anomalous hysteresis observed only in temperature/magnetic field-dependent ac susceptibility me…
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Out-of-equilibrium investigation of strongly correlated materials deciphers the hidden equilibrium properties. Herein, we have investigated the out-of-equilibrium magnetic properties of polycrystalline Dy2Ti2O7 and Ho2Ti2O7 spin ices. The experimental results show the emergence of magnetic field-induced anomalous hysteresis observed only in temperature/magnetic field-dependent ac susceptibility measurements. The observed memory effect (anomalous thermomagnetic hysteresis) strongly depends on the driving thermal and non-thermal variables. Contrary, in the absence of the magnetic field, dipolar interaction induced Ising paramagnetic to spin ice crossover develops a liquid-gas transition type hysteresis below 4 K. Unlike field-induced hysteresis, it shows weak dependency on thermal and non-thermal variables. Due to the non-colinear spin structure, the applied dc bias magnetic field produces quench disorder sites in the cooperative Ising spin matrix and suppresses the spin-phonon coupling. These quench disorders create dynamic spin correlations governed by quantum fluctuations, having slow spin relaxation and quick decay times, which additionally contribute to ac susceptibility. The initial conditions and measurement protocol decide the magnitude and sign of this dynamical term contributing to ac susceptibility. It has been suggested that such kind of out-of-equilibrium properties emerge by the cumulative effect of geometric frustration, disorder, quantum fluctuations, and the cooperative nature of spin dynamics of these materials.
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Submitted 18 January, 2023;
originally announced January 2023.
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Modulation-Doping a Correlated Electron Insulator
Authors:
Debasish Mondal,
Smruti Rekha Mahapatra,
Abigail M Derrico,
Rajeev Kumar Rai,
Jay R Paudel,
Christoph Schlueter,
Andrei Gloskovskii,
Rajdeep Banerjee,
Frank M F DeGroot,
Dipankar D Sarma,
Awadhesh Narayan,
Pavan Nukala,
Alexander X Gray,
Naga Phani B Aetukuri
Abstract:
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu…
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Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
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Submitted 7 January, 2023;
originally announced January 2023.
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Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform
Authors:
Ankit Rao,
Sooraj Sanjay,
Majid Ahmadi,
Anirudh Venugopalrao,
Navakanta Bhat,
Bart Kooi,
Srinivasan Raghavan,
Pavan Nukala
Abstract:
Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag),…
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Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag), that can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between high resistance (HRS) and low resistance states (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, different neuron-like networks are realized in a single CMOS compatible, 2D materials platform.
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Submitted 7 December, 2022;
originally announced January 2023.
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Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $Hf_{0.5}Zr_{0.5}O_{2}$-based Capacitors Through Operando Nanobeam X-ray Diffraction
Authors:
Evgenios Stylianidis,
Pranav Surabhi,
Ruben Hamming-Green,
Mart Salverda,
Yingfen Wei,
Arjan Burema,
Sylvia Matzen,
Tamalika Banerjee,
Alexander Björling,
Binayak Mukherjee,
Sangita Dutta,
Hugo Aramberri,
Jorge Íñiguez,
Beatriz Noheda,
Dina Carbone,
Pavan Nukala
Abstract:
Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is investigated, via the sensitivity offered by n…
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Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is investigated, via the sensitivity offered by nanobeam X-ray diffraction experiments during application of electrical bias. It is shown that the pristine rhombohedral phase exhibits a negative linear piezoelectric effect with piezoelectric coefficient ($d_{33}$) ~ -0.5 to -0.8 pm$V^{-1}$. First-principles calculations support an intrinsic negative piezoresponse. In addition, it is found that the piezoelectric response is suppressed above the coercive voltage. For higher voltages, and with the onset of DC conductivity throughout the capacitor, a second-order effect is observed. The electromechanical response observed in this work is clearly different from that of normal ferroelectrics, again underlining the unconventional nature of polarization switching in the samples.
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Submitted 3 December, 2022;
originally announced December 2022.
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Structural modulation in potassium birnessite single crystals
Authors:
Liliia D. Kulish,
Pavan Nukala,
Rick Scholtens,
A. G. Mike Uiterwijk,
Ruben Hamming-Green,
Graeme R. Blake
Abstract:
We report on the growth of single-crystal potassium birnessite (K0.31MnO2*0.41H2O) and present both the average and local structural characterization of this frustrated magnetic system. Single crystals were obtained employing a flux growth method with a KNO3/B2O3 flux at 700 °C. Single-crystal X-ray diffraction revealed an average orthorhombic symmetry, with space group Cmcm. A combination of high…
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We report on the growth of single-crystal potassium birnessite (K0.31MnO2*0.41H2O) and present both the average and local structural characterization of this frustrated magnetic system. Single crystals were obtained employing a flux growth method with a KNO3/B2O3 flux at 700 °C. Single-crystal X-ray diffraction revealed an average orthorhombic symmetry, with space group Cmcm. A combination of high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with atomic resolution energy dispersive X-ray spectroscopy (EDS) demonstrated the layered structure of potassium birnessite with manganese-containing planes well separated by layers of potassium atoms. MnO6 octahedra and the K/H2O planes were clearly imaged via integrated differential phase contrast (iDPC) STEM. Furthermore, iDPC-STEM also revealed the existence of local domains with alternating contrast of the manganese oxide planes, most likely originating from charge ordering of Mn3+ and Mn4+ along the c-axis. These charge-ordered domains are clearly correlated with a reduction in the c-lattice parameter compared to the rest of the matrix. The insight gained from this work allows for a better understanding of the correlation between structure and magnetic properties.
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Submitted 6 July, 2021;
originally announced July 2021.
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Polarons formation in Bi-deficient BaBiO$_3$
Authors:
W. Román Acevedo,
S. Di Napoli,
F. Romano,
G. Rodríguez Ruiz,
P. Nukala,
C. Quinteros,
J. Lecourt,
U. Lüders,
V. Vildosola,
D. Rubi
Abstract:
BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb doping. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia capping layer. By combinin…
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BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb doping. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia capping layer. By combining transport measurements with ab initio calculations we propose an scenario where the Bi-vacancies give rise to the formation of polarons and suggest that the electrical transport is dominated by the migration of these polarons trapped at Bi$^{3+}$ sites. Our work shows that cation vacancies engineering -- hardly explored to date -- appears as a promising pathway to tune the electronic and functional properties of perovskites.
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Submitted 9 April, 2021;
originally announced April 2021.
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Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices
Authors:
Pavan Nukala,
Majid Ahmadi,
Yingfen Wei,
Sytze de Graaf,
Sylvia Matzen,
Henny W. Zandbergen,
Bart Kooi,
Beatriz Noheda
Abstract:
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution…
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Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situ electrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated reversible structural phase transitions in the epitaxial LSMO and HZO layers. We follow the phase transition pathways at the atomic scale and identify that these mechanisms are at play both in tunnel junctions and ferroelectric capacitors switched with sub-millisecond pulses. Our results unmistakably demonstrate that oxygen voltammetry and polarization switching are intertwined in these materials.
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Submitted 21 October, 2020;
originally announced October 2020.
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Crystallization of GeO2 thin films into alpha-quartz: from spherulites to single crystals
Authors:
Silang Zhou,
Jordi Antoja-Lleonart,
Pavan Nukala,
Vaclav Ocelik,
Nick R. Lutjes,
Beatriz Noheda
Abstract:
Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficult to control and not fully understood. Here we report successful solid state crystallization of thin film of amorphous GeO2 into quartz on various su…
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Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficult to control and not fully understood. Here we report successful solid state crystallization of thin film of amorphous GeO2 into quartz on various substrates including Al2O3, MgAl2O4, MgO, LaAlO3 and SrTiO3. At relatively low annealing temperatures, the crystallization process is spherulitic: with fibers growing radially from the nucleation centers and the crystal lattice rotating along the growth direction with a linear dependence between the rotation angle and the distance to the core. For increasingly higher annealing temperatures, quartz crystals begin to form. The edges of the sample play an important role facilitating nucleation followed by growth sweeping inward until the whole film is crystallized. Control of the growth allows single crystalline quartz to be synthesized. Our study reveals the complexity of the nucleation and growth process of quartz and provides insight for further studies.
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Submitted 2 September, 2021; v1 submitted 8 July, 2020;
originally announced July 2020.
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Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
Authors:
Pavan Nukala,
Yingfen Wei,
Vincent de Haas,
Qikai Guo,
Jordi Antoja-Lleonart,
Beatriz Noheda
Abstract:
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (…
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The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading towards identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).
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Submitted 3 January, 2021; v1 submitted 4 May, 2020;
originally announced May 2020.
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Structure and magnetic properties of epitaxial CaFe2O4 thin films
Authors:
Silvia Damerio,
Pavan Nukala,
Jean Juraszek,
Pim Reith,
Hans Hilgenkamp,
Beatriz Noheda
Abstract:
CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of th…
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CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of this material does not exist yet. In this study we investigate epitaxial CaFe2O4 thin films grown on TiO2 (110) substrates by means of Pulsed Laser Deposition (PLD). Structural characterization reveals the coexistence of two out-of-plane crystal orientations and the formation of three in-plane oriented domains. The magnetic properties of the films, investigated macroscopically as well as locally, including highly sensitive Mossbauer spectroscopy, reveal the presence of just one order parameter showing long-range ordering below T = 185 K and the critical nature of the transition. In addition, a non-zero in-plane magnetization is found, consistent with the presence of uncompensated spins at phase or domain boundaries, as proposed for bulk samples.
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Submitted 28 April, 2020; v1 submitted 30 January, 2020;
originally announced January 2020.
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Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films
Authors:
Laura Bégon-Lours,
Martijn Mulder,
Pavan Nukala,
Sytze de Graaf,
Yorick Birkhölzer,
Bart Kooi,
Beatriz Noheda,
Gertjan Koster,
Guus Rijnders
Abstract:
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques…
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Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.
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Submitted 25 November, 2019;
originally announced November 2019.
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Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon
Authors:
Pavan Nukala,
Jordi Antoja-Lleonart,
Yingfen Wei,
Lluis Yedra,
Brahim Dkhil,
Beatriz Noheda
Abstract:
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx un…
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Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabilized in the regions with a direct connection between the substrate and the film through the compressive strain provided by an interfacial crystalline c-SiO2 layer., The film relaxes to a bulk m-phase in regions where a-SiOx regrows. On Si (100), we observe polar orthorhombic o-phase coexisting with m-phase, stabilized by inhomogeneous strains at the intersection of monoclinic domains. This work provides fundamental insight into the conditions that lead to the preferential stabilization of r-, o- and m-phases.
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Submitted 13 July, 2019;
originally announced July 2019.
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Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Authors:
Yingfen Wei,
Sylvia Matzen,
Guillaume Agnus,
Mart Salverda,
Pavan Nukala,
Thomas Maroutian,
Qihong Chen,
Jianting Ye,
Philippe Lecoeur,
Beatriz Noheda
Abstract:
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on…
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A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, the tunneling magnetoresistance (TMR) can be tuned and its sign can even be reversed by the bias voltage across the junction. We demonstrate four non-volatile resistance states generated by magnetic and electric field switching with high reproducibility in this system.
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Submitted 8 February, 2019;
originally announced February 2019.
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Switching on superferromagnetism
Authors:
A. Arora,
L. C. Phillips,
P. Nukala,
M. Ben Hassine,
A. A. Ünal,
B. Dkhil,
Ll. Balcells,
O. Iglesias,
A. Barthélémy,
F. Kronast,
M. Bibes,
S. Valencia
Abstract:
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenu…
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Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior.
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Submitted 12 February, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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Redox reaction enhanced Schottky contact at a \LNO{}(001)/Al interface
Authors:
Joseph Scola,
Bruno Berini,
Yves Dumont,
Pavan Nukala,
Brahim Dkhil
Abstract:
Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO$_3$ by aluminium, we fabricated a junction exhibiting a diode-like behaviour. At the equilibrium, the interface is insulating. The metallic behaviour can be recovered by applying a voltage drop across the junction in on…
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Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO$_3$ by aluminium, we fabricated a junction exhibiting a diode-like behaviour. At the equilibrium, the interface is insulating. The metallic behaviour can be recovered by applying a voltage drop across the junction in one polarity only. The electrical properties in direct and reverse bias are investigated. The observed electro-resistive effect rises up to $10^5$ \% and can be interpreted in terms of (i) a spontaneous redox reaction occurring at the interface and (ii) its reversal induced by charge injection in direct bias.
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Submitted 20 April, 2018;
originally announced April 2018.
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A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Authors:
Yingfen Wei,
Pavan Nukala,
Mart Salverda,
Sylvia Matzen,
Hong Jian Zhao,
Jamo Momand,
Arnoud Everhardt,
Graeme R. Blake,
Philippe Lecoeur,
Bart J. Kooi,
Jorge Íñiguez,
Brahim Dkhil,
Beatriz Noheda
Abstract:
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards t…
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After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
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Submitted 26 January, 2018;
originally announced January 2018.
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Role of the sample thickness in planar crack propagation
Authors:
Pallab Barai,
Phani K. V. V. Nukala,
Mikko J. Alava,
Stefano Zapperi
Abstract:
We study the effect of the sample thickness in planar crack front propagation in a disordered elastic medium using the random fuse model. We employ different loading conditions and we test their stability with respect to crack growth. We show that the thickness induces characteristic lengths in the stress enhancement factor in front of the crack and in the stress transfer function parallel to the…
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We study the effect of the sample thickness in planar crack front propagation in a disordered elastic medium using the random fuse model. We employ different loading conditions and we test their stability with respect to crack growth. We show that the thickness induces characteristic lengths in the stress enhancement factor in front of the crack and in the stress transfer function parallel to the crack. This is reflected by a thickness-dependent crossover scale in the crack front morphology that goes from from multi-scaling to self-affine with exponents in agreement with line depinning models and experiments. Finally, we compute the distribution of crack avalanches which is shown to depend on the thickness and the loading mode.
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Submitted 4 July, 2013;
originally announced July 2013.
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Fracture strength of disordered media: Universality, interactions and tail asymptotics
Authors:
Claudio Manzato,
Ashivni Shekhawat,
Phani K. V. V. Nukala,
Mikko J. Alava,
James P. Sethna,
Stefano Zapperi
Abstract:
We study the asymptotic properties of fracture strength distributions of disordered elastic media by a combination of renormalization group, extreme value theory, and numerical simulation. We investigate the validity of the `weakest-link hypothesis' in the presence of realistic long-ranged interactions in the random fuse model. Numerical simulations indicate that the fracture strength is well desc…
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We study the asymptotic properties of fracture strength distributions of disordered elastic media by a combination of renormalization group, extreme value theory, and numerical simulation. We investigate the validity of the `weakest-link hypothesis' in the presence of realistic long-ranged interactions in the random fuse model. Numerical simulations indicate that the fracture strength is well described by the Duxbury-Leath-Beale (DLB) distribution which is shown to flow asymptotically to the Gumbel distribution. We explore the relation between the extreme value distributions and the DLB type asymptotic distributions, and show that the universal extreme value forms may not be appropriate to describe the non-universal low-strength tail.
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Submitted 23 August, 2011;
originally announced August 2011.
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Sub-matrix updates for the Continuous-Time Auxiliary Field algorithm
Authors:
Emanuel Gull,
Peter Staar,
Sebastian Fuchs,
Phani Nukala,
Michael S. Summers,
Thomas Pruschke,
Thomas Schulthess,
Thomas Maier
Abstract:
We present a sub-matrix update algorithm for the continuous-time auxiliary field method that allows the simulation of large lattice and impurity problems. The algorithm takes optimal advantage of modern CPU architectures by consistently using matrix instead of vector operations, resulting in a speedup of a factor of $\approx 8$ and thereby allowing access to larger systems and lower temperature. W…
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We present a sub-matrix update algorithm for the continuous-time auxiliary field method that allows the simulation of large lattice and impurity problems. The algorithm takes optimal advantage of modern CPU architectures by consistently using matrix instead of vector operations, resulting in a speedup of a factor of $\approx 8$ and thereby allowing access to larger systems and lower temperature. We illustrate the power of our algorithm at the example of a cluster dynamical mean field simulation of the Néel transition in the three-dimensional Hubbard model, where we show momentum dependent self-energies for clusters with up to 100 sites.
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Submitted 5 May, 2011; v1 submitted 18 October, 2010;
originally announced October 2010.
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A Fast and Efficient Algorithm for Slater Determinant Updates in Quantum Monte Carlo Simulations
Authors:
Phani K. V. V. Nukala,
P. R. C. Kent
Abstract:
We present an efficient low-rank updating algorithm for updating the trial wavefunctions used in Quantum Monte Carlo (QMC) simulations. The algorithm is based on low-rank updating of the Slater determinants. In particular, the computational complexity of the algorithm is O(kN) during the k-th step compared with traditional algorithms that require O(N^2) computations, where N is the system size.…
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We present an efficient low-rank updating algorithm for updating the trial wavefunctions used in Quantum Monte Carlo (QMC) simulations. The algorithm is based on low-rank updating of the Slater determinants. In particular, the computational complexity of the algorithm is O(kN) during the k-th step compared with traditional algorithms that require O(N^2) computations, where N is the system size. For single determinant trial wavefunctions the new algorithm is faster than the traditional O(N^2) Sherman-Morrison algorithm for up to O(N) updates. For multideterminant configuration-interaction type trial wavefunctions of M+1 determinants, the new algorithm is significantly more efficient, saving both O(MN^2) work and O(MN^2) storage. The algorithm enables more accurate and significantly more efficient QMC calculations using configuration interaction type wavefunctions.
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Submitted 23 June, 2009;
originally announced June 2009.
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Size effects in statistical fracture
Authors:
Mikko J. Alava,
Phani K. V. V. Nukala,
Stefano Zapperi
Abstract:
We review statistical theories and numerical methods employed to consider the sample size dependence of the failure strength distribution of disordered materials. We first overview the analytical predictions of extreme value statistics and fiber bundle models and discuss their limitations. Next, we review energetic and geometric approaches to fracture size effects for specimens with a flaw. Fina…
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We review statistical theories and numerical methods employed to consider the sample size dependence of the failure strength distribution of disordered materials. We first overview the analytical predictions of extreme value statistics and fiber bundle models and discuss their limitations. Next, we review energetic and geometric approaches to fracture size effects for specimens with a flaw. Finally, we overview the numerical simulations of lattice models and compare with theoretical models.
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Submitted 21 January, 2009;
originally announced January 2009.
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Anomalous Roughness of Fracture Surfaces in 2D Fuse Models
Authors:
Phani K. V. V. Nukala,
Stefano Zapperi,
Mikko Alava,
Srdjan Simunovic
Abstract:
We study anomalous scaling and multiscaling of two-dimensional crack profiles in the random fuse model using both periodic and open boundary conditions. Our large scale and extensively sampled numerical results reveal the importance of crack branching and coalescence of microcracks, which induce jumps in the solid-on-solid crack profiles. Removal of overhangs (jumps) in the crack profiles elimin…
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We study anomalous scaling and multiscaling of two-dimensional crack profiles in the random fuse model using both periodic and open boundary conditions. Our large scale and extensively sampled numerical results reveal the importance of crack branching and coalescence of microcracks, which induce jumps in the solid-on-solid crack profiles. Removal of overhangs (jumps) in the crack profiles eliminates the multiscaling observed in earlier studies and reduces anomalous scaling. We find that the probability density distribution $p(Δh(\ell))$ of the height differences $Δh(\ell) = [h(x+\ell) - h(x)]$ of the crack profile obtained after removing the jumps in the profiles has the scaling form $p(Δh(\ell)) = <Δh^2(\ell)>^{-1/2} ~f(\frac{Δh(\ell)}{<Δh^2(\ell)>^{1/2}})$, and follows a Gaussian distribution even for small bin sizes $\ell$. The anomalous scaling can be summarized with the scaling relation $[\frac{<Δh^2(\ell)>^{1/2}}{<Δh^2(L/2)>^{1/2}}]^{1/ζ_{loc}} + \frac{(\ell-L/2)^2}{(L/2)^2} = 1$, where $<Δh^2(L/2)>^{1/2} \sim L^ζ$.
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Submitted 14 April, 2008;
originally announced April 2008.
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Crack Roughness in the 2D Random Threshold Beam Model
Authors:
Phani K. V. V. Nukala,
Stefano Zapperi,
Mikko Alava,
Srdjan Simunovic
Abstract:
We study the scaling of two-dimensional crack roughness using large scale beam lattice systems. Our results indicate that the crack roughness obtained using beam lattice systems does not exhibit anomalous scaling in sharp contrast to the simulation results obtained using scalar fuse lattices. The local and global roughness exponents ($ζ_{loc}$ and $ζ$, respectively) are equal to each other, and…
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We study the scaling of two-dimensional crack roughness using large scale beam lattice systems. Our results indicate that the crack roughness obtained using beam lattice systems does not exhibit anomalous scaling in sharp contrast to the simulation results obtained using scalar fuse lattices. The local and global roughness exponents ($ζ_{loc}$ and $ζ$, respectively) are equal to each other, and the two-dimensional crack roughness exponent is estimated to be $ζ_{loc} = ζ= 0.64 \pm 0.02$. Removal of overhangs (jumps) in the crack profiles eliminates even the minute differences between the local and global roughness exponents. Furthermore, removing these jumps in the crack profile completely eliminates the multiscaling observed in other studies. We find that the probability density distribution $p(Δh(\ell))$ of the height differences $Δh(\ell) = [h(x+\ell) - h(x)]$ of the crack profile obtained after removing the jumps in the profiles follows a Gaussian distribution even for small window sizes ($\ell$).
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Submitted 14 April, 2008;
originally announced April 2008.
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Fracture size effects from disordered lattice models
Authors:
Mikko J. Alava,
Phani K. V. V. Nukala,
Stefano Zapperi
Abstract:
We study size effects in the fracture strength of notched disordered samples using numerical simulations of lattice models for fracture. In particular, we consider the random fuse model, the random spring model and the random beam model, which all give similar results. These allow us to establish and understand the crossover between a regime controlled by disorder-induced statistical effects and…
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We study size effects in the fracture strength of notched disordered samples using numerical simulations of lattice models for fracture. In particular, we consider the random fuse model, the random spring model and the random beam model, which all give similar results. These allow us to establish and understand the crossover between a regime controlled by disorder-induced statistical effects and a stress-concentration controlled regime ruled by fracture mechanics. The crossover is described by a scaling law that accounts for the presence of fracture process zone which we quantify by averaging over several disordered configurations of the model. The models allow to study the development of the fracture process zone as the load is increased and to express this in terms of crack resistance (R-curve).
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Submitted 14 April, 2008;
originally announced April 2008.
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Effect of Disorder and Notches on Crack Roughness
Authors:
Phani K. V. V. Nukala,
Stefano Zapperi,
Mikko J. Alava,
Srdjan Simunovic
Abstract:
We analyze the effect of disorder and notches on crack roughness in two dimensions. Our simulation results based on large system sizes and extensive statistical sampling indicate that the crack surface exhibits a universal local roughness of $ζ_{loc} = 0.71$ and is independent of the initial notch size and disorder in breaking thresholds. The global roughness exponent scales as $ζ= 0.87$ and is…
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We analyze the effect of disorder and notches on crack roughness in two dimensions. Our simulation results based on large system sizes and extensive statistical sampling indicate that the crack surface exhibits a universal local roughness of $ζ_{loc} = 0.71$ and is independent of the initial notch size and disorder in breaking thresholds. The global roughness exponent scales as $ζ= 0.87$ and is also independent of material disorder. Furthermore, we note that the statistical distribution of crack profile height fluctuations is also independent of material disorder and is described by a Gaussian distribution, albeit deviations are observed in the tails.
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Submitted 22 August, 2007;
originally announced August 2007.
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Role of disorder in the size-scaling of material strength
Authors:
Mikko J. Alava,
Phani K. V. V. Nukala,
Stefano Zapperi
Abstract:
We study the sample size dependence of the strength of disordered materials with a flaw, by numerical simulations of lattice models for fracture. We find a crossover between a regime controlled by the fluctuations due to disorder and another controlled by stress-concentrations, ruled by continuum fracture mechanics. The results are formulated in terms of a scaling law involving a statistical fra…
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We study the sample size dependence of the strength of disordered materials with a flaw, by numerical simulations of lattice models for fracture. We find a crossover between a regime controlled by the fluctuations due to disorder and another controlled by stress-concentrations, ruled by continuum fracture mechanics. The results are formulated in terms of a scaling law involving a statistical fracture process zone. Its existence and scaling properties are only revealed by sampling over many configurations of the disorder. The scaling law is in good agreement with experimental results obtained from notched paper samples.
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Submitted 22 August, 2007;
originally announced August 2007.
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Statistical Models of Fracture
Authors:
Mikko J. Alava,
Phani K. V. V. Nukala,
Stefano Zapperi
Abstract:
Disorder and long-range interactions are two of the key components that make material failure an interesting playfield for the application of statistical mechanics. The cornerstone in this respect has been lattice models of the fracture in which a network of elastic beams, bonds or electrical fuses with random failure thresholds are subject to an increasing external load. These models describe o…
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Disorder and long-range interactions are two of the key components that make material failure an interesting playfield for the application of statistical mechanics. The cornerstone in this respect has been lattice models of the fracture in which a network of elastic beams, bonds or electrical fuses with random failure thresholds are subject to an increasing external load. These models describe on a qualitative level the failure processes of real, brittle or quasi-brittle materials. This has been particularly important in solving the classical engineering problems of material strength: the size dependence of maximum stress and its sample to sample statistical fluctuations. At the same time, lattice models pose many new fundamental questions in statistical physics, such as the relation between fracture and phase transitions. Experimental results point out to the existence of an intriguing crackling noise in the acoustic emission and of self-affine fractals in the crack surface morphology. Recent advances in computer power have enabled considerable progress in the understanding of such models. Among these partly still controversial issues, are the scaling and size effects in material strength and accumulated damage, the statistics of avalanches or bursts of microfailures, and the morphology of the crack surface. Here we present an overview of the results obtained with lattice models for fracture, highlighting the relations with statistical physics theories and more conventional fracture mechanics approaches.
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Submitted 26 September, 2006;
originally announced September 2006.
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Morphology of two dimensional fracture surface
Authors:
Mikko J. Alava,
Phani K. V. V. Nukala,
Stefano Zapperi
Abstract:
We consider the morphology of two dimensional cracks observed in experimental results obtained from paper samples and compare these results with the numerical simulations of the random fuse model (RFM). We demonstrate that the data obey multiscaling at small scales but cross over to self-affine scaling at larger scales. Next, we show that the roughness exponent of the random fuse model is recove…
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We consider the morphology of two dimensional cracks observed in experimental results obtained from paper samples and compare these results with the numerical simulations of the random fuse model (RFM). We demonstrate that the data obey multiscaling at small scales but cross over to self-affine scaling at larger scales. Next, we show that the roughness exponent of the random fuse model is recovered by a simpler model that produces a connected crack, while a directed crack yields a different result, close to a random walk. We discuss the multiscaling behavior of all these models.
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Submitted 11 September, 2006; v1 submitted 2 August, 2006;
originally announced August 2006.
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Scaling of Fracture Strength in Disordered Quasi-Brittle Materials
Authors:
Phani Kumar V. V. Nukala,
Srdjan Simunovic
Abstract:
This paper presents two main results. The first result indicates that in materials with broadly distributed microscopic heterogeneities, the fracture strength distribution corresponding to the peak load of the material response does not follow the commonly used Weibull and (modified) Gumbel distributions. Instead, a {\it lognormal} distribution describes more adequately the fracture strengths co…
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This paper presents two main results. The first result indicates that in materials with broadly distributed microscopic heterogeneities, the fracture strength distribution corresponding to the peak load of the material response does not follow the commonly used Weibull and (modified) Gumbel distributions. Instead, a {\it lognormal} distribution describes more adequately the fracture strengths corresponding to the peak load of the response. Lognormal distribution arises naturally as a consequence of multiplicative nature of large number of random distributions representing the stress scale factors necessary to break the subsequent "primary" bond (by definition, an increase in applied stress is required to break a "primary" bond) leading up to the peak load. Numerical simulations based on two-dimensional triangular and diamond lattice topologies with increasing system sizes substantiate that a {\it lognormal} distribution represents an excellent fit for the fracture strength distribution at the peak load. The second significant result of the present study is that, in materials with broadly distributed microscopic heterogeneities, the mean fracture strength of the lattice system behaves as $μ_f = \frac{μ_f^\star}{(Log L)^ψ} + \frac{c}{L}$, and scales as $μ_f \approx \frac{1}{(Log L)^ψ}$ as the lattice system size, $L$, approaches infinity.
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Submitted 30 March, 2005;
originally announced March 2005.
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An Efficient Block Circulant Preconditioner For Simulating Fracture Using Large Fuse Networks
Authors:
Phani Kumar V. V. Nukala,
Srdjan Simunovic
Abstract:
{\it Critical slowing down} associated with the iterative solvers close to the critical point often hinders large-scale numerical simulation of fracture using discrete lattice networks. This paper presents a block circlant preconditioner for iterative solvers for the simulation of progressive fracture in disordered, quasi-brittle materials using large discrete lattice networks. The average compu…
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{\it Critical slowing down} associated with the iterative solvers close to the critical point often hinders large-scale numerical simulation of fracture using discrete lattice networks. This paper presents a block circlant preconditioner for iterative solvers for the simulation of progressive fracture in disordered, quasi-brittle materials using large discrete lattice networks. The average computational cost of the present alorithm per iteration is $O(rs log s) + delops$, where the stiffness matrix ${\bf A}$ is partioned into $r$-by-$r$ blocks such that each block is an $s$-by-$s$ matrix, and $delops$ represents the operational count associated with solving a block-diagonal matrix with $r$-by-$r$ dense matrix blocks. This algorithm using the block circulant preconditioner is faster than the Fourier accelerated preconditioned conjugate gradient (PCG) algorithm, and alleviates the {\it critical slowing down} that is especially severe close to the critical point. Numerical results using random resistor networks substantiate the efficiency of the present algorithm.
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Submitted 30 March, 2005;
originally announced March 2005.
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An Efficient Algorithm For Simulating Fracture Using Large Fuse Networks
Authors:
Phani Kumar V. V. Nukala,
Srdjan Simunovic
Abstract:
The high computational cost involved in modeling of the progressive fracture simulations using large discrete lattice networks stems from the requirement to solve {\it a new large set of linear equations} every time a new lattice bond is broken. To address this problem, we propose an algorithm that combines the multiple-rank sparse Cholesky downdating algorithm with the rank-p inverse updating a…
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The high computational cost involved in modeling of the progressive fracture simulations using large discrete lattice networks stems from the requirement to solve {\it a new large set of linear equations} every time a new lattice bond is broken. To address this problem, we propose an algorithm that combines the multiple-rank sparse Cholesky downdating algorithm with the rank-p inverse updating algorithm based on the Sherman-Morrison-Woodbury formula for the simulation of progressive fracture in disordered quasi-brittle materials using discrete lattice networks. Using the present algorithm, the computational complexity of solving the new set of linear equations after breaking a bond reduces to the same order as that of a simple {\it backsolve} (forward elimination and backward substitution) {\it using the already LU factored matrix}. That is, the computational cost is $O(nnz({\bf L}))$, where $nnz({\bf L})$ denotes the number of non-zeros of the Cholesky factorization ${\bf L}$ of the stiffness matrix ${\bf A}$. This algorithm using the direct sparse solver is faster than the Fourier accelerated preconditioned conjugate gradient (PCG) iterative solvers, and eliminates the {\it critical slowing down} associated with the iterative solvers that is especially severe close to the critical points. Numerical results using random resistor networks substantiate the efficiency of the present algorithm.
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Submitted 30 March, 2005;
originally announced March 2005.
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Statistical properties of fracture in a random spring model
Authors:
Phani Kumar V. V. Nukala,
Stefano Zapperi,
Srdan Simunovic
Abstract:
Using large scale numerical simulations we analyze the statistical properties of fracture in the two dimensional random spring model and compare it with its scalar counterpart: the random fuse model. We first consider the process of crack localization measuring the evolution of damage as the external load is raised. We find that, as in the fuse model, damage is initially uniform and localizes at…
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Using large scale numerical simulations we analyze the statistical properties of fracture in the two dimensional random spring model and compare it with its scalar counterpart: the random fuse model. We first consider the process of crack localization measuring the evolution of damage as the external load is raised. We find that, as in the fuse model, damage is initially uniform and localizes at peak load. Scaling laws for the damage density, fracture strength and avalanche distributions follow with slight variations the behavior observed in the random fuse model. We thus conclude that scalar models provide a faithful representation of the fracture properties of disordered systems.
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Submitted 3 February, 2005;
originally announced February 2005.
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Crack avalanches in the three dimensional random fuse model
Authors:
Stefano Zapperi,
Phani Kumar V. V. Nukala,
Srđan Šimunović
Abstract:
We analyze the scaling of avalanche precursors in the three dimensional random fuse model by numerical simulations. We find that both the integrated and non-integrated avalanche size distributions are in good agreement with the results of the global load sharing fiber bundle model, which represents the mean-field limit of the model.
We analyze the scaling of avalanche precursors in the three dimensional random fuse model by numerical simulations. We find that both the integrated and non-integrated avalanche size distributions are in good agreement with the results of the global load sharing fiber bundle model, which represents the mean-field limit of the model.
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Submitted 14 January, 2005;
originally announced January 2005.
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Crack roughness and avalanche precursors in the random fuse model
Authors:
Stefano Zapperi,
Phani Kumar V. V. Nukala,
Srdan Simunovic
Abstract:
We analyze the scaling of the crack roughness and of avalanche precursors in the two dimensional random fuse model by numerical simulations, employing large system sizes and extensive sample averaging. We find that the crack roughness exhibits anomalous scaling, as recently observed in experiments. The roughness exponents ($ζ$, $ζ_{loc}$) and the global width distributions are found to be univer…
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We analyze the scaling of the crack roughness and of avalanche precursors in the two dimensional random fuse model by numerical simulations, employing large system sizes and extensive sample averaging. We find that the crack roughness exhibits anomalous scaling, as recently observed in experiments. The roughness exponents ($ζ$, $ζ_{loc}$) and the global width distributions are found to be universal with respect to the lattice geometry. Failure is preceded by avalanche precursors whose distribution follows a power law up to a cutoff size. While the characteristic avalanche size scales as $s_0 \sim L^D$, with a universal fractal dimension $D$, the distribution exponent $τ$ differs slightly for triangular and diamond lattices and, in both cases, it is larger than the mean-field (fiber bundle) value $τ=5/2$.
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Submitted 21 July, 2004;
originally announced July 2004.
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Percolation and localization in the random fuse model
Authors:
Phani Kumar V. V. Nukala,
Srdan Simunovic,
Stefano Zapperi
Abstract:
We analyze damage nucleation and localization in the random fuse model with strong disorder using numerical simulations. In the initial stages of the fracture process, damage evolves in an uncorrelated manner, resembling percolation. Subsequently, as the damage starts to accumulate, current enhancement at the tips of the microcracks leads eventually to catastrophic failure. We study this behavio…
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We analyze damage nucleation and localization in the random fuse model with strong disorder using numerical simulations. In the initial stages of the fracture process, damage evolves in an uncorrelated manner, resembling percolation. Subsequently, as the damage starts to accumulate, current enhancement at the tips of the microcracks leads eventually to catastrophic failure. We study this behavior quantifying the deviations from percolation and discussing alternative scaling laws for damage. The analysis of damage profiles confirms that localization occurs abruptly starting from an uniform damage landscape. Finally, we show that the cumulative damage distribution follows the normal distribution, suggesting that damage is uncorrelated on large length scales.
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Submitted 9 August, 2004; v1 submitted 12 November, 2003;
originally announced November 2003.
