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Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy
Authors:
Runnan Zhang,
Yuuki Yasui,
Masahiro Fukuda,
Taisuke Ozaki,
Masahiko Ogura,
Toshiharu Makino,
Daisuke Takeuchi,
Yoshiaki Sugimoto
Abstract:
To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond investigating surface defects and adsorbates; it also involves unraveling the mystery of the smooth growth of diamond. However, the inherently low conductivity and the short C-C bonds render atomic resolution imaging ex…
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To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond investigating surface defects and adsorbates; it also involves unraveling the mystery of the smooth growth of diamond. However, the inherently low conductivity and the short C-C bonds render atomic resolution imaging exceptionally challenging. Here, we successfully overcame these challenges by employing non-contact atomic force microscopy with reactive Si tips. Atomic resolution imaging was achieved even at room temperature. With density-functional-theory calculations, we clarified that the critical factors for atomic resolution are in the formation of tilted C-Si bonds between scanning probes and surfaces, along with reordering of the surface C-C dimers. Implications of the findings extend beyond the realm of surface characterization. The present atomic-resolution microscopies drive future advancements in diamond technologies by providing avenues for identifying dopants and constructing artificial nanostructures.
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Submitted 26 March, 2024;
originally announced March 2024.
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Exactly Solvable Spin Tri-Junctions
Authors:
Masahiro Ogura,
Masatoshi Sato
Abstract:
We present a class of exactly solvable tri-junctions of one- and two-dimensional spin systems. Based on the geometric criterion for solvability, we clarify the sufficient condition for the junctions so that the spin Hamiltonian becomes equivalent to Majorana quadratic forms. Then we examine spin tri-junctions using the obtained solvable models. We consider the transverse magnetic field Ising spin…
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We present a class of exactly solvable tri-junctions of one- and two-dimensional spin systems. Based on the geometric criterion for solvability, we clarify the sufficient condition for the junctions so that the spin Hamiltonian becomes equivalent to Majorana quadratic forms. Then we examine spin tri-junctions using the obtained solvable models. We consider the transverse magnetic field Ising spin chains and reveal how Majorana zero modes appear at the tri-junctions of the chains. Local terms of the tri-junction crucially affect the appearance of Majorna zero modes, and the tri-junction may support Majorana zero mode even if the bulk spin chains do not have Majorana end states. We also examine tri-junctions of two-dimensional SO(5)-spin lattices and discuss Majorana fermions along the junctions.
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Submitted 17 December, 2022;
originally announced December 2022.
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n-Type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers
Authors:
Riku Kawase,
Hiroyuki Kawashima,
Hiromitsu Kato,
Norio Tokuda,
Satoshi Yamasaki,
Masahiko Ogura,
Toshiharu Makino,
Norikazu Mizuochi
Abstract:
The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthe…
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The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthesized by CVD using tert-butylphosphine, which is much less toxic than phosphine. The unintentional incorporation of nitrogen was found to be suppressed by incrementally increasing the gas flow rates of H2 and CH$_4$. Hall measurements confirmed n-type conduction in three measured samples prepared under different growth conditions. The highest measured Hall mobility at room temperature was 422 cm$^2$/(Vs). In the sample with the lowest nitrogen concentration, the spin coherence time ($T_2$) increased to 1.62 $\pm$ 0.10 ms. Optically detected magnetic resonance spectra indicated that all of the measured NV centers were aligned along the [111] direction. This study provides appropriate CVD conditions for growing phosphorus-doped n-type diamond with perfectly aligned NV centers exhibiting long spin coherence times, which is important for the production of quantum diamond devices.
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Submitted 31 May, 2022;
originally announced May 2022.
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First-principles Calculation of Magnetocrystalline Anisotropy of Y(Co,Fe,Ni,Cu)$_5$ Based on Full-potential KKR Green's Function Method
Authors:
Haruki Okumura,
Tetsuya Fukushima,
Hisazumi Akai,
Masako Ogura
Abstract:
The performance of permanent magnets YCo$_5$ can be improved by replacing cobalt with other elements, such as iron, copper, and nickel. In order to determine its optimum composition, it is necessary to perform systematic theoretical calculations in a consistent framework. In this study, we calculated the magnetocrystalline anisotropy constant $K_{\rm u}$ of Y(Co$_{1-x-y}$Fe$_{x}$Cu$_{y}$)$_3$(Co…
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The performance of permanent magnets YCo$_5$ can be improved by replacing cobalt with other elements, such as iron, copper, and nickel. In order to determine its optimum composition, it is necessary to perform systematic theoretical calculations in a consistent framework. In this study, we calculated the magnetocrystalline anisotropy constant $K_{\rm u}$ of Y(Co$_{1-x-y}$Fe$_{x}$Cu$_{y}$)$_3$(Co$_{1-z}$Ni$_{z}$)$_2$ on the basis of the full-potential Korringa-Kohn-Rostoker Green's function method in conjunction with the coherent potential approximation. The calculated $K_{\rm u}$ of YCo$_5$ was smaller than the experimental value because of a missing enhancement due to orbital polarization. Although the value of $K_{\rm u}$ of Y(Co$_{1-x-y}$Fe$_{x}$Cu$_{y}$)$_3$(Co$_{1-z}$Ni$_{z}$)$_2$ was systematically underestimated compared to their experimental counterparts, the doping effect can be analyzed within a consistent framework. The results have shown that YFe$_3$Co$_2$ has much higher $K_{\rm u}=5.00$ MJ/m$^3$ than pristine YCo$_5$ ($K_{\rm u}=1.82$ MJ/m$^3$), and that nickel as a stabilization element decreases $K_{\rm u}$ and magnetization in YFe$_3$(Co$_{1-z}$Ni$_z$)$_2$. However, the anisotropy field of $z\sim0.5$ can compete with the value of YCo$_5$.
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Submitted 15 April, 2022;
originally announced April 2022.
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Vector Electrometry in a Wide-Gap Semiconductor Device Using a Spin Ensemble Quantum Sensor
Authors:
Yang,
Bang,
Takuya Murooka,
Kwangsoo Kim,
Hiromitsu Kato,
Toshiharu Makino,
Masahiko Ogura,
Satoshi Yamasaki,
Amir Yacoby,
Mutsuko Hatano,
Takayuki Iwasaki
Abstract:
Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field…
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Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field was significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtained the components of the electric field generated in the device.
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Submitted 30 June, 2020;
originally announced June 2020.
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First principles calculations of steady-state voltage-controlled magnetism: application to x-ray absorption spectroscopy experiment
Authors:
Alberto Marmodoro,
Sebastian Wimmer,
Ondrej Sipr,
Masako Ogura,
Hubert Ebert
Abstract:
Recent x-ray absorption experiments have demonstrated the possibility to accurately monitor the magnetism of metallic hetero-structures controlled via a time-independent perturbation caused for example by a static electric field. Using a first-principles, non-equilibrium Green function scheme, we show how the measured dichroic signal for the corresponding steady-state situation can be related to t…
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Recent x-ray absorption experiments have demonstrated the possibility to accurately monitor the magnetism of metallic hetero-structures controlled via a time-independent perturbation caused for example by a static electric field. Using a first-principles, non-equilibrium Green function scheme, we show how the measured dichroic signal for the corresponding steady-state situation can be related to the underlying electronic structure and its response to the external stimulus. The suggested approach works from the infinitesimal limit of linear response to the regime of strong electric field effects, which is realized in present experimental high sensitivity investigations.
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Submitted 29 April, 2020;
originally announced April 2020.
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Geometric Criterion for Solvability of Lattice Spin Systems
Authors:
Masahiro Ogura,
Yukihisa Imamura,
Naruhiko Kameyama,
Kazuhiko Minami,
Masatoshi Sato
Abstract:
We present a simple criterion for solvability of lattice spin systems on the basis of the graph theory and the simplicial homology. The lattice systems satisfy algebras with graphical representations. It is shown that the null spaces of adjacency matrices of the graphs provide conserved quantities of the systems. Furthermore, when the graphs belong to a class of simplicial complexes, the Hamiltoni…
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We present a simple criterion for solvability of lattice spin systems on the basis of the graph theory and the simplicial homology. The lattice systems satisfy algebras with graphical representations. It is shown that the null spaces of adjacency matrices of the graphs provide conserved quantities of the systems. Furthermore, when the graphs belong to a class of simplicial complexes, the Hamiltonians are found to be mapped to bilinear forms of Majorana fermions, from which the full spectra of the systems are obtained. In the latter situation, we find a relation between conserved quantities and the first homology group of the graph, and the relation enables us to interpret the conserved quantities as flux excitations of the systems. The validity of our theory is confirmed in several known solvable spin systems including the 1d transverse-field Ising chain, the 2d Kitaev honeycomb model and the 3d diamond lattice model. We also present new solvable models on a 1d tri-junction, 2d and 3d fractal lattices, and the 3d cubic lattice.
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Submitted 21 April, 2020; v1 submitted 30 March, 2020;
originally announced March 2020.
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Simulating lattice thermal conductivity in semiconducting materials using high-dimensional neural network potential
Authors:
Emi Minamitani,
Masayoshi Ogura,
Satoshi Watanabe
Abstract:
We demonstrate that a high-dimensional neural network potential (HDNNP) can predict the lattice thermal conductivity of semiconducting materials with an accuracy comparable to that of density functional theory (DFT) calculation. After a training procedure based on the force, the root mean square error between the forces predicted by the HDNNP and DFT is less than 40 meV/Å. As typical examples, we…
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We demonstrate that a high-dimensional neural network potential (HDNNP) can predict the lattice thermal conductivity of semiconducting materials with an accuracy comparable to that of density functional theory (DFT) calculation. After a training procedure based on the force, the root mean square error between the forces predicted by the HDNNP and DFT is less than 40 meV/Å. As typical examples, we present the results for Si and GaN bulk crystals. The deviation from the thermal conductivity calculated using DFT is within 1% at 200 to 500 K for Si and within 5.4% at 200 to 1000 K for GaN.
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Submitted 21 May, 2019;
originally announced May 2019.
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Single crystal diamond membranes for nanoelectronics
Authors:
K. Bray,
H. Kato,
R. Previdi,
R. Sandstrom,
K. Ganesan,
M. Ogura,
T. Makino,
S. Yamasaki,
A. P. Magyar,
M. Toth,
I. Aharonovich
Abstract:
Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal…
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Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal diamond membranes. The membranes have large lateral directions, exceeding 500x500 um2 and are only several hundreds of nanometers thick. We further realize vertical single crystal p-n junctions, made from the diamond membranes that exhibit onset voltages of ~ 10V and a current of several mA. Moreover, we deterministically introduce optically active color centers into the membranes, and demonstrate for the first time a single crystal nanoscale diamond LED. The robust and scalable approach to engineer the electrically active single crystal diamond membranes, offers new pathways for advanced nanophotonics, nanoelectronics and optomechanics devices employing diamond.
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Submitted 17 October, 2017;
originally announced November 2017.
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Enhancement of magnetism of Fe by Cr and V
Authors:
Masako Ogura,
Hisazumi Akai,
Junjiro Kanamori
Abstract:
Enhancement of magnetism of Fe that occurs by alloying with Cr or V is discussed on the basis of first-principles electronic structure calculation. The d states of Fe next to Cr(V) are pushed down to the lower energy side compared to those of pure Fe due to the hybridization with Cr(V) d states, which leads a Co-like electronic structure for the Fe atom. This enhances magnetic moments of other Fe…
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Enhancement of magnetism of Fe that occurs by alloying with Cr or V is discussed on the basis of first-principles electronic structure calculation. The d states of Fe next to Cr(V) are pushed down to the lower energy side compared to those of pure Fe due to the hybridization with Cr(V) d states, which leads a Co-like electronic structure for the Fe atom. This enhances magnetic moments of other Fe atoms and also the exchange couplings among them. The same mechanism works as well for the magnetism of Fe/Cr heterostructures. The idea is extended to design of a new type of antiferromagnets with high Néel temperature. Such heterostructures could be used to increase a magnetic anisotropy of permanent magnets.
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Submitted 23 June, 2011;
originally announced June 2011.
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Half-metallic diluted antiferromagnetic semiconductors
Authors:
H. Akai,
M. Ogura
Abstract:
The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, C…
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The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.
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Submitted 31 March, 2006;
originally announced March 2006.
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Mott transition from a diluted exciton gas to a dense electron-hole plasma in a single V-shaped quantum wire
Authors:
Thierry Guillet,
Roger Grousson,
Valia Voliotis,
Michel Menant,
Xue-Lun Wang,
Mutsuo Ogura
Abstract:
We report on the study of many-body interactions in a single high quality V-shaped quantum wire by means of continuous and time-resolved microphotoluminescence. The transition from a weakly interacting exciton gas when the carrier density n is less than 10^5 cm^-1 (i.e. n aX < 0.1, with aX the exciton Bohr radius), to a dense electron-hole plasma (n > 10^6 cm^-1, i.e. n aX > 1) is systematically…
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We report on the study of many-body interactions in a single high quality V-shaped quantum wire by means of continuous and time-resolved microphotoluminescence. The transition from a weakly interacting exciton gas when the carrier density n is less than 10^5 cm^-1 (i.e. n aX < 0.1, with aX the exciton Bohr radius), to a dense electron-hole plasma (n > 10^6 cm^-1, i.e. n aX > 1) is systematically followed in the system as the carrier density is increased. We show that this transition occurs gradually : the free carriers first coexist with excitons for n aX > 0.1, then the electron-hole plasma becomes degenerate at n aX = 0.8. We also show that the non-linear effects are strongly related to the kind of disorder and localization properties in the structure especially in the low density regime.
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Submitted 5 September, 2003; v1 submitted 14 January, 2003;
originally announced January 2003.
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Local disorder and optical properties in V-shaped quantum wires : towards one-dimensional exciton systems
Authors:
Thierry Guillet,
Roger Grousson,
Valia Voliotis,
Xue-Lun Wang,
Mutsuo Ogura
Abstract:
The exciton localization is studied in GaAs/GaAlAs V-shaped quantum wires (QWRs) by high spatial resolution spectroscopy. Scanning optical imaging of different generations of samples shows that the localization length has been enhanced as the growth techniques were improved. In the best samples, excitons are delocalized in islands of length of the order of 1 micron, and form a continuum of 1D st…
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The exciton localization is studied in GaAs/GaAlAs V-shaped quantum wires (QWRs) by high spatial resolution spectroscopy. Scanning optical imaging of different generations of samples shows that the localization length has been enhanced as the growth techniques were improved. In the best samples, excitons are delocalized in islands of length of the order of 1 micron, and form a continuum of 1D states in each of them, as evidenced by the sqrt(T) dependence of the radiative lifetime. On the opposite, in the previous generation of QWRs, the localization length is typically 50 nm and the QWR behaves as a collection of quantum boxes. These localization properties are compared to structural properties and related to the progresses of the growth techniques. The presence of residual disorder is evidenced in the best samples and explained by the separation of electrons and holes due to the large in-built piezo-electric field present in the structure.
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Submitted 5 September, 2003; v1 submitted 14 January, 2003;
originally announced January 2003.
