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Charge Density Wave bending observed by Xfel source acting as a tunable electronic lens for hard x-rays
Authors:
E. Bellec,
D. Ghoneim,
A. Gallo,
V. L. R. Jacques,
I. Gonzalez-Vallejo,
L. Ortega,
M. Chollet,
A. Sinchenko,
D. Le Bolloc'h
Abstract:
Ultrafast X-ray diffraction by the LCLS free-electron laser has been used to probe Charge Density Wave (CDW) systems under applied external currents. At sufficiently low currents, CDW wavefronts bend in the direction transverse to the 2k$_F$ wave vector. We show that this shear effect has the ability to focus or defocus hard X-ray beams, depending of the current direction, making it an electronic…
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Ultrafast X-ray diffraction by the LCLS free-electron laser has been used to probe Charge Density Wave (CDW) systems under applied external currents. At sufficiently low currents, CDW wavefronts bend in the direction transverse to the 2k$_F$ wave vector. We show that this shear effect has the ability to focus or defocus hard X-ray beams, depending of the current direction, making it an electronic lens of a new kind, tunable at will from the Fraunhofer to the Fresnel regime. The effect is interpreted using the fractional Fourier transform showing how the macroscopic curvature of a nanometric modulation can be beneficially used to modify the propagation of X-ray beams.
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Submitted 18 September, 2023;
originally announced September 2023.
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Charge-Density-Waves Tuned by Crystal Symmetry
Authors:
A. Gallo-Frantz,
A. A. Sinchenko,
D. Ghoneim,
L. Ortega,
P. Godard,
P. -O. Renault,
P. Grigoriev,
A. Hadj-Azzem,
P. Monceau,
D. Thiaudière,
E. Bellec,
V. L. R. Jacques,
D. Le Bolloc'h
Abstract:
The electronic orders appearing in condensed matter systems are originating from the precise arrangement of atoms constituting the crystal as well as their nature. This teneous relationship can lead to highly different phases in condensed matter, and drive electronic phase transitions. Here, we show that a very slight deformation of the crystal structure of TbTe$_3$ can have a dramatic influence o…
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The electronic orders appearing in condensed matter systems are originating from the precise arrangement of atoms constituting the crystal as well as their nature. This teneous relationship can lead to highly different phases in condensed matter, and drive electronic phase transitions. Here, we show that a very slight deformation of the crystal structure of TbTe$_3$ can have a dramatic influence on the electronic order that is stabilized. In particular, we show that the Charge Density Wave (CDW) developping along the $\vec{c}$ axis in the pristine state, switches to an orientation along $\vec{a}$ when the naturally orthorhombic system is turned into a tetragonal system. This is achieved by performing true biaxial mechanical deformation of a TbTe$_3$ sample from 250K to 375K, and by measuring both structural and electronic parameters with x-ray diffraction and transport measurements. We show that this switching transition is driven by the tetragonality parameter $a/c$, and that the transition occurs for $a=c$, with a coexistence region for $0.9985< a/c < 1.002$. The CDW transition temperature $T_c$ is found to have a linear dependence with $a/c$, with no saturation in the deformed states investigated here, while the gap saturates out of the coexistence region. The linear dependence of $T_c$ is accounted for within a tight-binding model. Our results question the relationship between the gap and $T_c$ in RTe$_3$ systems. More generally, our method of applying true biaxial deformation at cryogenic temperatures can be applied to many systems displaying electronic phase transitions, and opens a new route towards the study of coexisting or competing electronic orders in condensed matter.
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Submitted 27 June, 2023;
originally announced June 2023.
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Experimentally Validated Multiphysics Modeling of Fracture Induced by Thermal Shocks in Sintered UO2 Pellets
Authors:
Levi D. McClenny,
Moiz I. Butt,
M. Gomaa Abdoelatef,
Michal J. Pate,
Kay L. Yee,
Harikrishnan Rajendran,
Delia Perez-Nunez,
Wen Jiang,
Luis H. Ortega,
Sean M. McDeavitt,
Karim Ahmed
Abstract:
Commercial nuclear power plants extensively rely on fission energy from uranium dioxide (UO2) fuel pellets that provide thermal energy; consequently, generating carbon-free power in current generation reactors. UO2 fuel incurs damage and fractures during operation due to large thermal gradients that develop across the fuel pellet during normal operation. The underlying mechanisms by which these pr…
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Commercial nuclear power plants extensively rely on fission energy from uranium dioxide (UO2) fuel pellets that provide thermal energy; consequently, generating carbon-free power in current generation reactors. UO2 fuel incurs damage and fractures during operation due to large thermal gradients that develop across the fuel pellet during normal operation. The underlying mechanisms by which these processes take place are still poorly understood. This work is a part of our combined experimental and computational effort for quantifying the UO2 fuel fracture behavior induced by thermal shock. In this work, we describe an experimental study performed to understand the fuel fracturing behavior of sintered powder UO2 pellets when exposed to thermal shock conditions, as well as a multiphysics phase-field fracture model which accurately predicts the experimental results. Parametric studies and sensitivity analysis are used to assess uncertainty. Experimental data was collected from multiple experiments by exposing UO2 pellets to high-temperature conditions (900-1200C), which are subsequently quenched in sub-zero water. We exhibit that the fracture results gathered in the experimental setting can be consistently recreated by this work phase-field fracture model, demonstrating a reliable ability to our model in simulating the thermal shock gradients and subsequent fracture mechanics in the primary fuel source for Light-Water Reactors (LWRs). This model advanced the fundamental understanding of thermal shock and property correlations to advance utilization of UO2 as a fuel for nuclear reactors.
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Submitted 5 December, 2021;
originally announced December 2021.
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Effect of dimensionality on sliding charge density waves. The case of the quasi-two dimensional TbTe$_3$ system probed by coherent x-ray diffraction
Authors:
D. Le Bolloc'h,
A. A. Sinchenko,
V. L. R. Jacques,
L. Ortega,
J. E. Lorenzo,
G. Chahine,
. Lejay,
P. Monceau
Abstract:
We report on sliding Charge Density Wave (CDW) in the quasi two-dimensional TbTe$_3$ system probed by coherent x-ray diffraction combined with {\it in-situ} transport measurements. We show that the non-Ohmic conductivity in TbTe$_3$ is made possible thanks to a strong distortion of the CDW. Our diffraction experiment versus current shows first that the CDW remains undeformed below the threshold cu…
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We report on sliding Charge Density Wave (CDW) in the quasi two-dimensional TbTe$_3$ system probed by coherent x-ray diffraction combined with {\it in-situ} transport measurements. We show that the non-Ohmic conductivity in TbTe$_3$ is made possible thanks to a strong distortion of the CDW. Our diffraction experiment versus current shows first that the CDW remains undeformed below the threshold current I$_S$ and then suddenly rotates and reorders by motion above threshold. Contrary to quasi-one dimensional systems, the CDW in TbTe$_3$ does not display any phase shifts below I$_S$ and tolerates only slow spatial variations of the phase above. This is a first observation of CDW behavior in the bulk in a quasi-two dimensional system allowing collective transport of charges at room temperature.
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Submitted 2 February, 2016;
originally announced February 2016.
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Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire
Authors:
Cécile Delacour,
Luc Ortega,
Marc Faucher,
Thierry Crozes,
Thierry Fournier,
Bernard Pannetier,
Vincent Bouchiat
Abstract:
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state…
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We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9ML) has an offset critical temperature above 4.2K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices.
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Submitted 2 February, 2011;
originally announced February 2011.
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Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface
Authors:
Olivier Fruchart,
Anthony Rousseau,
Didier Schmaus,
A. L'Hoir,
Richard Haettel,
L. Ortega
Abstract:
We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property d…
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We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain.
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Submitted 25 January, 2011;
originally announced January 2011.
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Martensite structures and twinning in substrate-constrained epitaxial Ni-Mn-Ga films deposited by a magnetron co-sputtering process
Authors:
Jérémy Tillier,
Daniel Bourgault,
Sébastien Pairis,
Luc Ortega,
Nathalie Caillault,
Laurent Carbone
Abstract:
In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target…
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In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.
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Submitted 17 January, 2011;
originally announced January 2011.
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Ni-Mn-Ga films in the austenite and the martensite structures at room temperature: Uniaxial texturation and epitaxial growth
Authors:
Jérémy Tillier,
Antinéa Einig,
Daniel Bourgault,
Philippe Odier,
Luc Ortega,
Sébastien Pairis,
Laureline Porcar,
Paul Chometon,
Nathalie Caillault,
Laurent Carbone
Abstract:
Ni-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were studied. A first batch of samples was deposited using a resist sacrificial layer in order to release the film from the substrate before vacuum annealing. This process leads to polycrystalline films with a strong (022) fiber…
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Ni-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were studied. A first batch of samples was deposited using a resist sacrificial layer in order to release the film from the substrate before vacuum annealing. This process leads to polycrystalline films with a strong (022) fiber texture. The martensitic phase transformation of such polycrystalline freestanding films has been studied by optical and scanning electron microscopy. A second batch of samples was grown epitaxially on (100)MgO substrates using different deposition temperatures. The texture has been analyzed with four-circle X-ray diffraction. Epitaxial films crystallized both in the austenite and the martensite structures at room temperature have been studied.
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Submitted 14 January, 2011;
originally announced January 2011.
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Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Authors:
Jérémy Tillier,
Daniel Bourgault,
Philippe Odier,
Luc Ortega,
Sébastien Pairis,
Olivier Fruchart,
Nathalie Caillault,
Laurent Carbone
Abstract:
In order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distribution of the 14-modulated martensite at room temperature. The nature of such modulated-martensites is still strongly debated for magnetic shape memory alloys. It has been very recently demonstrated th…
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In order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distribution of the 14-modulated martensite at room temperature. The nature of such modulated-martensites is still strongly debated for magnetic shape memory alloys. It has been very recently demonstrated that the modulated-martensites in Ni-Mn-Ga are adaptive phases. The results presented here corroborate this theory for the first time, for three different compositions. Moreover, we demonstrate with the help of the adaptive modulations theory that b-variants of the 14-modulated martensite form close to the free-surface of the film to release the stress induced by branching of macro-twinned domains during the martensitic transformation on a rigid substrate. At room temperature, the content of such b-variants is found to strongly decrease when the macro-twinned domain sizes increase.
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Submitted 10 November, 2010;
originally announced November 2010.
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Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
Authors:
C. Marcenat,
J. Kacmarcik,
R. Piquerel,
P. Achatz,
G. Prudon,
C. Dubois,
B. Gautier,
J. C. Dupuy,
E. Bustarret,
L. Ortega,
T. Klein,
J. Boulmer,
T. Kociniewski,
D. Debarre
Abstract:
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased…
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We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006).
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Submitted 2 December, 2009; v1 submitted 28 October, 2009;
originally announced October 2009.
