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Braiding lateral morphotropic grain boundary in homogeneitic oxides
Authors:
Shengru Chen,
Qinghua Zhang,
Dongke Rong,
Yue Xu,
Jinfeng Zhang,
Fangfang Pei,
He Bai,
Yan-Xing Shang,
Shan Lin,
Qiao Jin,
Haitao Hong,
Can Wang,
Wensheng Yan,
Haizhong Guo,
Tao Zhu,
Lin Gu,
Yu Gong,
Qian Li,
Lingfei Wang,
Gang-Qin Liu,
Kui-juan Jin,
Er-Jia Guo
Abstract:
Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries…
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Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.
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Submitted 13 July, 2022;
originally announced July 2022.
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Conductance through a helical state in an InSb nanowire
Authors:
Jakob Kammhuber,
Maja C Cassidy,
Fei Pei,
Michal P Nowak,
Adriaan Vuik,
Diana Car,
Sèbastien R Plissard,
Erik P A M Bakkers,
Michael Wimmer,
Leo P Kouwenhoven
Abstract:
The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for…
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The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here we report electrical conductance measurements of a quantum point contact (QPC) formed in an indium antimonide nanowire as a function of magnetic field. At magnetic fields exceeding 3T, the $2e^2/h$ plateau shows a reentrant conductance feature towards $1e^2/h$ which increases linearly in width with magnetic field before enveloping the $1e^2/h$ plateau. Rotating the external magnetic field either parallel or perpendicular to the spin-orbit field allows us to clearly attribute this experimental signature to SOI. We compare our observations with a model of a QPC incorporating SOI and extract a spin-orbit energy of ~6.5meV, which is significantly stronger than the SO energy obtained by other methods.
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Submitted 24 January, 2017;
originally announced January 2017.
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Conductance Quantization at zero magnetic field in InSb nanowires
Authors:
Jakob Kammhuber,
Maja C. Cassidy,
Hao Zhang,
Önder Gül,
Fei Pei,
Michiel W. A. de Moor,
Bas Nijholt,
Kenji Watanabe,
Takashi Taniguchi,
Diana Car,
Sebastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectri…
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Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.
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Submitted 11 March, 2016;
originally announced March 2016.
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Large spin-orbit coupling in carbon nanotubes
Authors:
G. A. Steele,
F. Pei,
E. A. Laird,
J. M. Jol,
H. B. Meerwaldt,
L. P. Kouwenhoven
Abstract:
It has recently been recognized that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the spin-orbit coupling in carbon nanotubes can be significant due to their curved surface. Previous works have reported spin-orbit couplings in reasonable agreement with…
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It has recently been recognized that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the spin-orbit coupling in carbon nanotubes can be significant due to their curved surface. Previous works have reported spin-orbit couplings in reasonable agreement with theory, and this coupling strength has formed the basis of a large number of theoretical proposals. Here we report a spin-orbit coupling in three carbon nanotube devices that is an order of magnitude larger than measured before. We find a zero-field spin splitting of up to 3.4 meV, corresponding to a built-in effective magnetic field of 29 T aligned along the nanotube axis. While the origin of the large spin-orbit coupling is not explained by existing theories, its strength is promising for applications of the spin-orbit interaction in carbon nanotubes devices.
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Submitted 11 April, 2013;
originally announced April 2013.
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A valley-spin qubit in a carbon nanotube
Authors:
Edward A. Laird,
Fei Pei,
Leo. P. Kouwenhoven
Abstract:
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are spinless, allowing for qubit coherence times that have been extended up to seconds in diamond and silicon. Carbon nanotubes are a particularly attractive host mater…
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Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are spinless, allowing for qubit coherence times that have been extended up to seconds in diamond and silicon. Carbon nanotubes are a particularly attractive host material, because the spin-orbit interaction with the valley degree of freedom allows for electrical manipulation of the qubit. In this work, we realise such a qubit in a nanotube double quantum dot. The qubit is encoded in two valley-spin states, with coherent manipulation via electrically driven spin resonance (EDSR) mediated by a bend in the nanotube. Readout is performed by measuring the current in Pauli blockade. Arbitrary qubit rotations are demonstrated, and the coherence time is measured via Hahn echo. Although the measured decoherence time is only 65 ns in our current device, this work offers the possibility of creating a qubit for which hyperfine interaction can be virtually eliminated.
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Submitted 10 October, 2012;
originally announced October 2012.
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Valley-spin blockade and spin resonance in carbon nanotubes
Authors:
Fei Pei,
Edward A. Laird,
Gary A. Steele,
Leo P. Kouwenhoven
Abstract:
Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley…
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Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley degeneracies in the electronic bandstructure. These lead to complicated multiplet states even for two-electron quantum dots thereby significantly weakening the selection rules for Pauli blockade. Only recently have spin qubits been realized in silicon devices where the valley degeneracy is lifted by strain and spatial confinement. In carbon nanotubes Pauli blockade can be observed by lifting valley degeneracy through disorder. In clean nanotubes, quantum dots have to be made ultra-small to obtain a large energy difference between the relevant multiplet states. Here we report on low-disorder nanotubes and demonstrate Pauli blockade based on both valley and spin selection rules. We exploit the bandgap of the nanotube to obtain a large level spacing and thereby a robust blockade. Single-electron spin resonance is detected using the blockade.
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Submitted 9 October, 2012;
originally announced October 2012.
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Ab initio study on the electronic and magnetic properties of CaFe2As2 within a GGA + negative U approach
Authors:
S. Wu,
G. Wang,
F. Pei,
S. Y. Wang,
L. Y. Chen,
C. Z. Wang,
K. M. Ho
Abstract:
This paper has been withdrawn by the author due to the error in figure 2, we did not optimized c-value of the supercell, so the results can not give the true physics of this material.
This paper has been withdrawn by the author due to the error in figure 2, we did not optimized c-value of the supercell, so the results can not give the true physics of this material.
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Submitted 14 January, 2009; v1 submitted 12 January, 2009;
originally announced January 2009.
