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Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites
Authors:
Gabriel J. Man,
Aleksandr Kalinko,
Dibya Phuyal,
Pabitra K. Nayak,
Håkan Rensmo,
Sergei M. Butorin
Abstract:
Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-…
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Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-cation in mediating the influence of photoinduced defects. Organic A-cation hydrogen bonding facilitates chemical flexing of the lead-bromide bond that mitigates the self-doping effect of bromide vacancies. The contribution of partially ionic lead-bromide bonding to the electronic band edges, where the bonding becomes more ionic upon the formation of defects, mitigates re-hybridization of the electronic structure upon degradation. These findings reveal two new general design principles for defect tolerance in materials. Our findings uncover the foundations of defect tolerance in halide perovskites and have implications for defect calculations, all beam-based measurements of photophysical properties and perovskite solar cell technology.
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Submitted 6 May, 2023;
originally announced May 2023.
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In-situ exfoliation method of large-area 2D materials
Authors:
Antonija Grubišić-Čabo,
Matteo Michiardi,
Charlotte E. Sanders,
Marco Bianchi,
Davide Curcio,
Dibya Phuyal,
Magnus H. Berntsen,
Qinda Guo,
Maciej Dendzik
Abstract:
The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in…
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The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle.
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Submitted 29 September, 2022;
originally announced September 2022.
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Intra-Atomic and Local Exchange Fields in the Van der Waals Magnet CrI3
Authors:
Anirudha Ghosh,
H. Johan M. Jonsson,
D. J. Mukkattukavil,
Y. Kvashnin,
D. Phuyal,
M. Agaker,
Alessandro Nicolaou,
M. Jonak,
R. Klingeler,
M. V. Kamalakar,
Hakan Rensmo,
Tapati Sarkar,
Alexander N. Vasiliev,
Sergei Butorin,
J. -E. Rubensson,
Olle Eriksson,
Mahmoud Abdel-Hafiez
Abstract:
We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic X-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra which is evidence of spin-flip in the dd excitation. Interestingly, the dd excitation energies are…
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We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic X-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra which is evidence of spin-flip in the dd excitation. Interestingly, the dd excitation energies are similar on both sides of the ferromagnetic transition temperature, TC of 61 K, although MD in RIXS is predominant at 0.4 tesla magnetic field below TC. This demonstrates that the ferromagnetic superexchange interaction that is responsible for the intra-atomic exchange field, is vanishingly small compared to local exchange field that comes from exchange and correlation interaction among the interacting Cr 3d orbitals. The investigation presented here demonstrate that the electronic structure of bulk CrI3 is complex in the sense that dynamical electron correlations are significant. The recorded RIXS spectra reported here reveal clearly resolved Cr 3d intra-orbital dd excitations that represent transitions between electronic levels that are heavily influenced by multi-configuration effects. Our calculations employing the crystal field TTmultiplet theory taking into account the Cr 3d hybridization with the ligand valence states and the full multiplet structure due to intra-atomic and crystal field interactions in Oh and D3d symmetry, clearly reproduced the dichroic trend in experimental RIXS spectra.
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Submitted 12 January, 2022;
originally announced January 2022.
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A-site Cation Influence on the Conduction Band of Lead Bromide Perovskites
Authors:
Gabriel J. Man,
Chinnathambi Kamal,
Aleksandr Kalinko,
Dibya Phuyal,
Joydev Acharya,
Soham Mukherjee,
Pabitra K. Nayak,
Håkan Rensmo,
Michael Odelius,
Sergei M. Butorin
Abstract:
Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band sta…
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Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band states, the σ-π energy separation, and find that it is strongly influenced by the strength of electronic coupling between the A-cation and bromide-lead sublattice. Our finding provides an alternative mechanism to the commonly discussed polaronic screening and hot phonon bottleneck carrier cooling mechanisms. Our work emphasizes the optoelectronic role of the A-cation, provides a comprehensive view of A-cation effects in the electronic and crystal structures, and outlines a broadly applicable spectroscopic approach for assessing the impact of chemical alterations of the A-cation on halide and potentially non-halide perovskite electronic structure.
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Submitted 17 September, 2021;
originally announced September 2021.
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Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique
Authors:
Dmitriy A. Chareev,
Polina V. Evstigneeva,
Dibya Phuyal,
Gabriel Man,
Hakan Rensmo,
Alexander N. Vasiliev,
Mahmoud Abdel-Hafiez
Abstract:
Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. He…
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Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high quality crystals of transition metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth metal poly-chalcogenides and NbS2 crystals using the aforementioned process. Most of the obtained crystals have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state-of-the-art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ~ 200 K and ~ 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals, and yield state-of-the-art measurements.
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Submitted 14 August, 2020; v1 submitted 28 July, 2020;
originally announced July 2020.
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Exchange dependent ultrafast magnetization dynamics in Fe$_{1-x}$Ni$_{x}$ alloys
Authors:
Somnath Jana,
Ronny Knut,
Erna K. Delczeg-Czirjak,
Rameez S. Malik,
Robert Stefanuik,
Raghuveer Chimata,
Dibya Phuyal,
Venkata Mutta,
Serkan Akansel,
Daniel Primetzhofer,
Martina Ahlberg,
Johan Söderström,
Johan Åkerman,
Peter Svedlindh,
Olle Eriksson,
Olof Karis
Abstract:
Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe demagnetization. We find that the delay is correlated to the Curie temperature and hence also the exchange interaction. The temporal evolution of demagnetization is f…
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Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe demagnetization. We find that the delay is correlated to the Curie temperature and hence also the exchange interaction. The temporal evolution of demagnetization is fitted to a magnon diffusion model based on the presupposition of enhanced ultrafast magnon generation in the Fe sublattice. The spin wave stiffness extracted from this model correspond well to known experimental values.
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Submitted 25 October, 2018;
originally announced October 2018.
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Doping induced site-selective Mott insulating phase in LaFeO$_3$
Authors:
S. Jana,
S. K. Panda,
D. Phuyal,
B. Pal,
S. Mukherjee,
A. Dutta,
P. Anil Kumar,
D. Hedlund,
J. Schott,
P. Thunstrom,
Y. Kvashnin,
H. Rensmo,
M. Venkata Kamalakar,
Carlo. U. Segre,
P. Svedlindh,
K. Gunnarsson,
S. Biermann,
O. Eriksson,
O. Karis,
D. D. Sarma
Abstract:
Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, doping results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge…
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Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, doping results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge-ordered (CO) or charge-disproportionate (CD) states. In most oxides, antiferromagnetic order and charge-disproportionation are asssociated with insulating behavior. Here we report the realization of a unique physical state that can be induced by Mo doping in LaFeO$_3$: the resulting metallic state is a site-selective Mott insulator where itinerant electrons evolving in low-energy Mo states coexist with localized carriers on the Fe sites. In addition, a local breathing-type lattice distortion induces charge disproportionation on the latter, without destroying the antiferromagnetic order. A state, combining antiferromangetism, metallicity and CD phenomena is rather rare in oxides and may be of utmost significance for future antiferromagnetic memory devices.
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Submitted 25 October, 2018;
originally announced October 2018.
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Two-dimensional flexible high diffusive spin circuits
Authors:
I. G. Serrano,
J. Panda,
Fernand Denoel,
Örjan Vallin,
Dibya Phuyal,
Olof Karis,
M. Venkata Kamalakar
Abstract:
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits.…
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Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-based spin sensors, a unique platform to explore pure spin current based operations and low power flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. These circuits, realized using chemical vapour deposited (CVD) graphene, exhibit large spin diffusion coefficients ~0.19-0.24 m2s-1 at room temperature. Compared to conventional devices of graphene on Si/SiO2 substrates, such values are 10-20 times larger and result in a maximum spin diffusion length ~10 um in graphene achieved on such industry standard substrates, showing one order enhanced room temperature non-local spin signals. These devices exhibit state of the art spin diffusion, arising out of a distinct substrate topography that facilitates efficient spin transport, leading to a scalable, high-performance platform towards flexible 2D spintronics. Our innovation unlocks a new domain for the exploration of strain-dependent spin phenomena and paves the way for flexible graphene spin memory-logic units and surface mountable sensors.
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Submitted 31 July, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
