Engineering Anomalously Large Electron Transport in Topological Semimetals
Authors:
Vincent M. Plisson,
Xiaohan Yao,
Yaxian Wang,
George Varnavides,
Alexey Suslov,
David Graf,
Eun Sang Choi,
Hung-Yu Yang,
Yiping Wang,
Marisa Romanelli,
Grant McNamara,
Birender Singh,
Gregory T. McCandless,
Julia Y. Chan,
Prineha Narang,
Fazel Tafti,
Kenneth S. Burch
Abstract:
Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single-particle mobilities remain unexplained. This work demonstrates the dramatic mobili…
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Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single-particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon-electron dominating over phonon-phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas - van Alphen (dHvA), electron transport, Raman scattering, and first-principles calculations in the topological semimetals MX$_2$ (M=Nb, Ta and X=Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first-principles calculations establish phonon-electron dominated scattering only in the MGe$_2$ compounds. Thus, this study proves that phonon-drag is crucial to the transport properties of topological semimetals and provides insight to further engineer these materials.
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Submitted 26 November, 2023;
originally announced November 2023.
Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$
Authors:
Gavin B. Osterhoudt,
Vincent M. Plisson,
Yaxian Wang,
Christina A. C. Garcia,
Johannes Gooth,
Claudia Felser,
Prineha Narang,
Kenneth S. Burch
Abstract:
Topological semimetals have revealed a wide array of novel transport phenomena, including electron hydrodynamics, quantum field theoretic anomalies, and extreme magnetoresistances and mobilities. However, the scattering mechanisms central to these behaviors remain largely unexplored. Here we reveal signatures of significant phonon-electron scattering in the type-II Weyl semimetal WP$_{2}$ via temp…
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Topological semimetals have revealed a wide array of novel transport phenomena, including electron hydrodynamics, quantum field theoretic anomalies, and extreme magnetoresistances and mobilities. However, the scattering mechanisms central to these behaviors remain largely unexplored. Here we reveal signatures of significant phonon-electron scattering in the type-II Weyl semimetal WP$_{2}$ via temperature-dependent Raman spectroscopy. Over a large temperature range, we find that the decay rates of the lowest energy $A_{1}$ modes are dominated by phonon-electron rather than phonon-phonon scattering. In conjunction with first-principles calculations, a combined analysis of the momentum, energy, and symmetry-allowed decay paths indicates this results from intraband scattering of the electrons. The excellent agreement with theory further suggests that such results could be true for the acoustic modes. We thus provide evidence for the importance of phonons in the transport properties of topological semimetals and identify specific properties that may contribute to such behavior in other materials.
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Submitted 20 July, 2020;
originally announced July 2020.
