-
Spin polarization and magnetotransport properties of systematically disordered $\mathrm{Fe}_{60}\mathrm{Al}_{40}$ thin films
Authors:
Kiril Borisov,
Jonathan Ehrler,
Ciaran Fowley,
Benedikt Eggert,
Heiko Wende,
Steffen Cornelius,
Kay Potzger,
Juergen Lindner,
Juergen Fassbender,
Rantej Bali,
Plamen Stamenov
Abstract:
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 n…
▽ More
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated Fe$_{60}$Al$_{40}$ a promising material for application in spin electronic devices.
△ Less
Submitted 30 April, 2021;
originally announced April 2021.
-
Tuning of the Dzyaloshinskii-Moriya Interaction by He$^+$ ion irradiation
Authors:
Hans T. Nembach,
Emilie Jué,
Kay Poetzger,
Juergen Fassbender,
Thomas J. Silva,
Justin M. Shaw
Abstract:
We studied the impact of He$^+$ irradiation on the Dzyaloshinskii-Moriya interaction (DMI) in Ta/Co20Fe60B20/Pt/MgO samples. We found that irradiation with of 40 keV He$^+$ ions increases DMI by approximately 20% for fluences up to 2$\cdot$10$\rm{^{16}}$ $\rm{ions/cm}^2$ before it decreases for higher fluence values. In contrast, the interfacial anisotropy shows a distinctly different fluence depe…
▽ More
We studied the impact of He$^+$ irradiation on the Dzyaloshinskii-Moriya interaction (DMI) in Ta/Co20Fe60B20/Pt/MgO samples. We found that irradiation with of 40 keV He$^+$ ions increases DMI by approximately 20% for fluences up to 2$\cdot$10$\rm{^{16}}$ $\rm{ions/cm}^2$ before it decreases for higher fluence values. In contrast, the interfacial anisotropy shows a distinctly different fluence dependence. To better understand the impact of the ion irradiation on the Ta and Pt interfaces with the Co20Fe60B20 layer, we carried out Monte-Carlo simulations, which showed an expected increase of disorder at the interfaces. A moderate increase in disorder can increase the total number of triplets for the three-site exchange mechanism and can consequently increase the DMI. Our results demonstrate that the DMI can be locally engineered at the nanometer scale, providing a highly promising approach to advance skyrmion-based memories.
△ Less
Submitted 15 March, 2022; v1 submitted 15 August, 2020;
originally announced August 2020.
-
Magnetic response of FeRh to static and dynamic disorder
Authors:
Benedikt Eggert,
Alexander Schmeink,
Johanna Lill,
Maciej O. Liedke Andreas Wagner,
Sakura Pascarelli,
Kay Potzger,
Jürgen Lindner,
Thomas Thomson,
Jürgen Fassbender,
Katharina Ollefs,
Werner Keune,
Rantej Bali,
Heiko Wende
Abstract:
Changes of the magnetic and crystal structure on the microscopic scale in 40 nm FeRh thin films have been applied to investigate the phenomena of a disorder induced ferromagnetism at room temperature initiated through light ion-irradiation with fluences up to 0.125 Ne$^+$/nm$^{-2}$. Magnetometry shows an increase of magnetic ordering at low temperatures and a decrease of the transition temperature…
▽ More
Changes of the magnetic and crystal structure on the microscopic scale in 40 nm FeRh thin films have been applied to investigate the phenomena of a disorder induced ferromagnetism at room temperature initiated through light ion-irradiation with fluences up to 0.125 Ne$^+$/nm$^{-2}$. Magnetometry shows an increase of magnetic ordering at low temperatures and a decrease of the transition temperature combined with a broadening of the hysteresis with rising ion fluence. $^{57}$Fe Mössbauer spectroscopy reveals the occurrence of an additional magnetic contributions with an hyperfine splitting of 27.2 T - identical to that of ferromagnetic B2-FeRh. The appearance of an anti-site Fe-contribution can be assumed to be lower than 0.6 Fe-at%, indicating that no change of the chemical composition is evident. The investigation of the local structure shows an increase of the static mean square relative displacement determined by X-ray absorption fine structure spectroscopy, while an increase of the defect-concentration has been determined by positron annihilation spectroscopy. From the changes of the microscopic magnetic structure a similarity between the temperature induced and the structural disorder induced ferromagnetic phase can be observed. These findings emphasize the relationship between magnetic ordering and the microscopic defect structure in FeRh.
△ Less
Submitted 25 November, 2019;
originally announced November 2019.
-
Magneto-structural correlations in a systematically disordered B2 lattice
Authors:
Jonathan Ehrler,
Biplab Sanyal,
Jörg Grenzer,
Shengqiang Zhou,
Roman Böttger,
Benedikt Eggert,
Heiko Wende,
Jürgen Lindner,
Jürgen Fassbender,
Christoph Leyens,
Kay Potzger,
Rantej Bali
Abstract:
Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter (…
▽ More
Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter ($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm, where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest that below the critical point the system magnetically behaves as it would still be fully ordered, whereas above, it is largely the increase of $a_0$ in the disordered state that determines the $M_{s}$. The insights obtained here can be useful for achieving tailored magnetic properties in alloys through disordering.
△ Less
Submitted 19 November, 2019;
originally announced November 2019.
-
Structure-property relationship of Co$_2$MnSi thin films in response to He$^+$ -irradiation
Authors:
F. Hammerath,
R. Bali,
R. Huebner,
M. R. D. Brandt,
S. Rodan,
K. Potzger,
R. Boettger,
Y. Sakuraba,
B. Buechner,
S. Wurmehl
Abstract:
We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural orde…
▽ More
We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly $L2_1$-ordered to a fully $A2$-disordered structure type and quantify the evolution of the $A2$ structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the $L2_1$ and $A2$ phases showing that the $A2$ disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence.
△ Less
Submitted 19 September, 2018;
originally announced September 2018.
-
Nematicity of correlated systems driven by anisotropic chemical phase separation
Authors:
Ye Yuan,
René Hübner,
Magdalena Birowska,
Chi Xu,
Mao Wang,
Slawomir Prucnal,
Rafal Jakiela,
Kay Potzger,
Roman Böttger,
Stefan Facsko,
Jacek A. Majewski,
Manfred Helm,
Maciej Sawicki,
Shengqiang Zhou,
Tomasz Dietl
Abstract:
The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi…
▽ More
The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems.
△ Less
Submitted 2 November, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
-
Disentangling defect-induced ferromagnetism in SiC
Authors:
Yutian Wang,
Lin Li,
Slawomir Prucnal,
Xuliang Chen,
Wei Tong,
Zhaorong Yang,
Frans Munnik,
Kay Potzger,
Wolfgang Skorupa,
Sibylle Gemming,
Manfred Helm,
Shengqiang Zhou
Abstract:
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic…
▽ More
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain the magnetic properties as a result of the intrinsic clustering tendency of defects.
△ Less
Submitted 22 January, 2014;
originally announced January 2014.
-
Using x-ray diffraction to identify precipitates in transition metal doped semiconductors
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
J. von Borany,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated…
▽ More
In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.
△ Less
Submitted 1 January, 2013;
originally announced January 2013.
-
Rise and fall of defect induced ferromagnetism in SiC single crystals
Authors:
Lin Li,
S. Prucnal,
S. D. Yao,
K. Potzger,
W. Anwand,
A. Wagner,
Shengqiang Zhou
Abstract:
6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to…
▽ More
6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.
△ Less
Submitted 6 June, 2011;
originally announced June 2011.
-
Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix
Authors:
Shengqiang Zhou,
Artem Shalimov,
Kay Potzger,
Nicole M. Jeutter,
Carsten Baehtz,
Manfred Helm,
Juergen Fassbender,
Heidemarie Schmidt
Abstract:
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particl…
▽ More
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.
△ Less
Submitted 21 October, 2009;
originally announced October 2009.
-
Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties
Authors:
Shengqiang Zhou,
K. Potzger,
Qingyu Xu,
K. Kuepper,
G. Talut,
D. Marko,
A. Muecklich,
M. Helm,
J. Fassbender,
E. Arenholz,
H. Schmidt
Abstract:
In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4) can be texturally embedded inside a ZnO matrix by ion implantation and post-annealing. The two kinds of ferrites show different magnetic properties, e.g. coercivity and magnetization. Anomalous Hall effect and positive magnetoresistance have been observed. Our study suggests a ferrimagnet/semiconductor hybrid system fo…
▽ More
In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4) can be texturally embedded inside a ZnO matrix by ion implantation and post-annealing. The two kinds of ferrites show different magnetic properties, e.g. coercivity and magnetization. Anomalous Hall effect and positive magnetoresistance have been observed. Our study suggests a ferrimagnet/semiconductor hybrid system for potential applications in magneto-electronics. This hybrid system can be tuned by selecting different transition metal ions (from Mn to Zn) to obtain various magnetic and electronic properties.
△ Less
Submitted 24 August, 2009;
originally announced August 2009.
-
MnSi$_{1.7}$ nanoparticles embedded in Si: Superparamagnetism with a collective behavior
Authors:
Shengqiang Zhou,
A. Shalimov,
K. Potzger,
M. Helm,
J. Fassbender,
H. Schmidt
Abstract:
The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at non-equilibrium growth conditions. MnSi$_{1.7}$ nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi$_{1.7}$ bulk phase. In…
▽ More
The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at non-equilibrium growth conditions. MnSi$_{1.7}$ nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi$_{1.7}$ bulk phase. In this paper we present the static and dynamic magnetic properties of MnSi$_{1.7}$ nanoparticles. Using the Preisach model, we derive the magnetic parameters, such as the magnetization of individual particles, the distribution of coercive fields and the inter-particle interaction field. Time-dependent magnetization measurements reveal a spin-glass behavior of the system.
△ Less
Submitted 21 October, 2009; v1 submitted 20 August, 2009;
originally announced August 2009.
-
Non-DMS related ferromagnetism in transition metal doped zinc oxide
Authors:
Kay Potzger,
Shengqiang Zhou
Abstract:
We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is high…
▽ More
We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is highly suited for the investigation of those effects. By focussing mainly on Fe, Co or Ni implanted ZnO single crystals we show that there are manifold sources for ferromagnetism in this material which can easily be confused with the formation of a ferromagnetic diluted magnetic semiconductor (DMS). We will focus on metallic as well as oxide precipitates and the difficulties of their identification.
△ Less
Submitted 5 August, 2009;
originally announced August 2009.
-
Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
Authors:
Shengqiang Zhou,
K. Potzger,
J. von Borany,
R. Groetzschel,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a t…
▽ More
In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the measured ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed and they exhibit superparamagnetic properties. The Co or Ni NCs are crystallographically oriented with respect to the ZnO matrix. Their magnetic properties, e.g., the anisotropy and the superparamagnetic blocking temperature, can be tuned by annealing. We discuss the magnetic anisotropy of Ni NCs embedded in ZnO concerning the strain anisotropy.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Fe-implanted ZnO: Magnetic precipitates versus dilution
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
J. von Borany,
R. Groetzschel,
W. Skorupa,
M. Helm,
J. Fassbender,
N. Volbers,
M. Lorenz,
T. Herrmannsdoerfer
Abstract:
Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single cry…
▽ More
Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single crystals comprehensively. Different implantation fluences and temperatures and post-implantation annealing temperatures have been chosen in order to evaluate the structural and magnetic properties over a wide range of parameters. Three different regimes with respect to the Fe concentration and the process temperature are found: 1) Disperse Fe$^{2+}$ and Fe$^{3+}$ at low Fe concentrations and low processing temperatures, 2) FeZn$_2$O$_4$ at very high processing temperatures and 3) an intermediate regime with a co-existence of metallic Fe (Fe$^0$) and ionic Fe (Fe$^{2+}$ and Fe$^{3+}$). Ferromagnetism is only observed in the latter two cases, where inverted ZnFe$_2$O$_4$ and $α$-Fe nanocrystals are the origin of the observed ferromagnetic behavior, respectively. The ionic Fe in the last case could contribute to a carrier mediated coupling. However, their separation is too large to couple ferromagnetically due to the lack of p-type carrier. For comparison investigations of Fe-implanted epitaxial ZnO thin films are presented.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO - a phenomenon related to defects?
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
K. Kuepper,
J. Grenzer,
Qingyu Xu,
A. Muecklich M. Helm,
J. Fassbender,
E. Arenholz
Abstract:
We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defe…
▽ More
We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defects in the ZnO host matrix, since the crystalline quality of the substrates was lowered due to the preparation as observed by x-ray diffraction.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Suppression of secondary phase formation in Fe implanted ZnO single crystals
Authors:
K. Potzger,
Shengqiang Zhou,
H. Reuther,
K. Kuepper,
G. Talut,
M. Helm,
J. Fassbender,
J. D. Denlinger
Abstract:
Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such doping in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases.…
▽ More
Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such doping in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases. Thus, the residual saturation magnetization in the preannealed ZnO single crystals is about 20 times lower than for the as-polished ones and assigned to indirect coupling between isolated Fe ions rather than to clusters.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Spin-dependent transport in nanocomposite C:Co films
Authors:
Shengqiang Zhou,
Markus Berndt,
Danilo Buerger,
Viton Heera,
Kay Potzger,
Gintautas Abrasonis,
Gyoergy Radnoczi,
Gyoergy J. Kovacs,
Andreas Kolitsch,
Manfred Helm,
Juergen Fassbender,
Wolfhard Moeller,
Heidemarie Schmidt
Abstract:
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resis…
▽ More
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promising candidates for carbon-based Hall sensors and spintronic devices.
△ Less
Submitted 2 August, 2009;
originally announced August 2009.
-
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?
Authors:
Shengqiang Zhou,
K. Potzger,
Qingyu Xu,
G. Talut,
M. Lorenz,
W. Skorupa,
M. Helm,
J. Fassbender,
M. Grundmann,
H. Schmidt
Abstract:
Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit…
▽ More
Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases (Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified as the source for ferromagnetism. Due to their different crystallographic orientation with respect to the host crystal these nanocrystals in some cases are very difficult to be detected by a simple Bragg-Brentano scan. This results in the pitfall of using XRD to exclude secondary phase formation in DMS materials. For comparison, the solubility of Co diluted in ZnO films ranges between 10 and 40 at.% using different growth conditions pulsed laser deposition. Such diluted, Co-doped ZnO films show paramagnetic behaviour. However, only the magnetoresistance of Co-doped ZnO films reveals possible s-d exchange interaction as compared to Co-implanted ZnO single crystals.
△ Less
Submitted 21 July, 2009;
originally announced July 2009.
-
Origin of magnetic moments in defective TiO2 single crystals
Authors:
Shengqiang Zhou,
E. Cizmar,
K. Potzger,
M. Krause,
G. Talut,
M. Helm,
J. Fassbender,
S. A. Zvyagin,
J. Wosnitza,
H. Schmidt
Abstract:
In this paper we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman-scattering, and electron spin resonance spectroscopy, a defect complex, \emph{i.e.} Ti$^{3+}$ ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated TiO2. This kind of defect complex results in a local…
▽ More
In this paper we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman-scattering, and electron spin resonance spectroscopy, a defect complex, \emph{i.e.} Ti$^{3+}$ ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated TiO2. This kind of defect complex results in a local (TiO$_{6-x}$) stretching Raman mode. We elucidate that Ti$^{3+}$ ions with one unpaired 3d electron provide the local magnetic moments.
△ Less
Submitted 12 February, 2009;
originally announced February 2009.
-
Ferromagnetic, structurally disordered ZnO implanted with Co ions
Authors:
Kay Potzger,
Shengqiang Zhou,
Qingyu Xu,
Artem Shalimov,
Rainer Groetzschel,
Heidemarie Schmidt,
Arndt Muecklich,
Manfred Helm,
Juergen Fassbender
Abstract:
We present superparamagnetic clusters of structurally highly disordered Co-Zn-O created by high fluence Co ion implantation into ZnO (0001) single crystals at low temperatures. This secondary phase cannot be detected by common x-ray diffraction but is observed by high-resolution transmission electron microscopy. In contrast to many other secondary phases in a ZnO matrix it induces low-field anom…
▽ More
We present superparamagnetic clusters of structurally highly disordered Co-Zn-O created by high fluence Co ion implantation into ZnO (0001) single crystals at low temperatures. This secondary phase cannot be detected by common x-ray diffraction but is observed by high-resolution transmission electron microscopy. In contrast to many other secondary phases in a ZnO matrix it induces low-field anomalous Hall effect and thus is a candidate for magneto-electronics applications.
△ Less
Submitted 13 December, 2008;
originally announced December 2008.
-
Room temperature ferromagnetism in carbon-implanted ZnO
Authors:
Shengqiang Zhou,
Qingyu Xu,
Kay Potzger,
Georg Talut,
Rainer Groetzschel,
Juergen Fassbender,
Mykola Vinnichenko,
Joerg Grenzer,
Manfred Helm,
Holger Hochmuth,
Michael Lorenz,
Marius Grundmann,
Heidemarie Schmidt
Abstract:
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2)…
▽ More
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
△ Less
Submitted 21 November, 2008;
originally announced November 2008.
-
Structural and magnetic properties of Mn-implanted Si
Authors:
Shengqiang Zhou,
K. Potzger,
Gufei Zhang,
A. Muecklich,
F. Eichhorn,
N. Schell,
R. Groetzschel,
B. Schmidt,
W. Skorupa,
M. Helm,
J. Fassbender,
D. Geiger
Abstract:
Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as implanted samples. Depending on the Mn-fluence, the size increases from 5 nm to 20 nm upon rapid thermal annealing. No significant evidence is found for Mn substitu…
▽ More
Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as implanted samples. Depending on the Mn-fluence, the size increases from 5 nm to 20 nm upon rapid thermal annealing. No significant evidence is found for Mn substituting Si sites either in the as-implanted or annealed samples. The observed ferromagnetism yields a saturation moment of 0.21 mu_B per implanted Mn at 10 K, which could be assigned to MnSi1.7 nanoparticles as revealed by a temperature dependent magnetization measurement.
△ Less
Submitted 24 December, 2006;
originally announced December 2006.
-
Crystallographically oriented magnetic ZnFe2O4 nanoparticles synthesized by Fe implantation into ZnO
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
G. Talut,
F. Eichhorn,
J. von Borany,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 10…
▽ More
In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 1073 K, crystallographically oriented ZnFe2O4 nanoparticles were formed inside ZnO with the orientation relationship of ZnFe2O4(111)[110]//ZnO(0001)[1120]. These ZnFe2O4 nanoparticles show a hysteretic behavior upon magnetization reversal at 5 K.
△ Less
Submitted 18 December, 2006;
originally announced December 2006.
-
Absence of ferromagnetism in V-implanted ZnO single crystals
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
K. Kuepper,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. T…
▽ More
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.
△ Less
Submitted 14 December, 2006;
originally announced December 2006.
-
Crystalline Ni nanoparticles as the origin of ferromagnetism in Ni implanted ZnO crystals
Authors:
Shengqiang Zhou,
K. Potzger,
Gufei Zhang,
F. Eichhorn,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparticles were formed inside ZnO. The magnetic behavior (magnetization with field reversal and with different temperature protocol) of all samples is well explained by a magnetic Ni-nanoparticle system. Although the formati…
▽ More
We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparticles were formed inside ZnO. The magnetic behavior (magnetization with field reversal and with different temperature protocol) of all samples is well explained by a magnetic Ni-nanoparticle system. Although the formation of Ni:ZnO based diluted magnetic semiconductor cannot be ruled out, the major contribution to the magnetic properties stems from crystalline nanoparticles synthesized under these implantation conditions.
△ Less
Submitted 30 November, 2006;
originally announced November 2006.
-
Fe implanted ferromagnetic ZnO
Authors:
K. Potzger,
Shengqiang Zhou,
H. Reuther,
A. Muecklich,
F. Eichhorn,
N. Schell,
W. Skorupa,
M. Helm,
J. Fassbender,
T. Herrmannsdoerfer,
T. P. Papageorgiou
Abstract:
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe…
▽ More
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
△ Less
Submitted 13 December, 2005;
originally announced December 2005.
