Showing 1–50 of 58 results for author: Santos, P V

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to t… ▽ More The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the $\mathrm{V_{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 6 pages, 4 figures

Solid-state continuous time crystal with a built-in clock

Authors: I. Carraro Haddad, D. L. Chafatinos, A. S. Kuznetsov, I. A. Papuccio-Fernández, A. A. Reynoso, A. E. Bruchhausen, K. Biermann, P. V. Santos, G. Usaj, A. Fainstein

Abstract: Time crystals (TCs) are many-body systems displaying spontaneous breaking of time translation symmetry. Here, we demonstrate a TC using driven-dissipative condensates of microcavity exciton-polaritons, spontaneously formed from an incoherent particle bath. In contrast to other realizations, the TC phases can be controlled by the power of continuous-wave non-resonant optical drive exciting the cond… ▽ More Time crystals (TCs) are many-body systems displaying spontaneous breaking of time translation symmetry. Here, we demonstrate a TC using driven-dissipative condensates of microcavity exciton-polaritons, spontaneously formed from an incoherent particle bath. In contrast to other realizations, the TC phases can be controlled by the power of continuous-wave non-resonant optical drive exciting the condensate and optomechanical interactions with phonons. Those phases are for increasing power: (i) Larmor precession of pseudo-spins - a signature of continuous TC, (ii) locking of the frequency of precession to self-sustained coherent phonons - stabilized TC, (iii) doubling of TC frequency by phonons - a discrete TC with continuous excitation. These results establish microcavity polaritons as a platform for the investigation of time-broken symmetry in non-hermitian systems. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Comments: 25 pages; 15 figures

Journal ref: Science 384, 995-1000 (2024)

Giant optomechanical coupling and dephasing protection with cavity exciton-polaritons

Authors: P. Sesin, A. S. Kuznetsov, G. Rozas, S. Anguiano, A. E. Bruchhausen, A. Lemaître, K. Biermann, P. V. Santos, A. Fainstein

Abstract: Electronic resonances can significantly enhance the photon-phonon coupling in cavity optomechanics, but are normally avoided due to absorption losses and dephasing by inhomogeneous broadening. We experimentally demonstrate that exciton-polaritons in semiconductor microcavities enable GHz optomechanics with single-particle resonant couplings reaching record values in the 10s of MHz range. Moreover,… ▽ More Electronic resonances can significantly enhance the photon-phonon coupling in cavity optomechanics, but are normally avoided due to absorption losses and dephasing by inhomogeneous broadening. We experimentally demonstrate that exciton-polaritons in semiconductor microcavities enable GHz optomechanics with single-particle resonant couplings reaching record values in the 10s of MHz range. Moreover, this resonant enhancement is protected from inhomogeneous broadening by the Rabi gap. Single-polariton non-linearities and the optomechanical strong-coupling regime become accessible in this platform. △ Less

Submitted 15 December, 2022; originally announced December 2022.

Comments: 13 pages, 12 figures

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Authors: T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G. V. Astakhov, P. V. Santos

Abstract: The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detecte… ▽ More The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics. △ Less

Submitted 25 August, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Appl. 20, 034017 (2023)

Microcavity phonoritons -- a coherent optical-to-microwave interface

Authors: A. S. Kuznetsov, K. Biermann, A. Reynoso, A. Fainstein, P. V. Santos

Abstract: Optomechanical systems provide a pathway for the bidirectional optical-to-microwave interconversion in (quantum) networks. We demonstrate the implementation of this functionality and non-adiabatic optomechanical control in a single, $μ$m-sized potential trap for phonons and exciton-polariton condensates in a structured semiconductor microcavity. The exciton-enhanced optomechanical coupling leads t… ▽ More Optomechanical systems provide a pathway for the bidirectional optical-to-microwave interconversion in (quantum) networks. We demonstrate the implementation of this functionality and non-adiabatic optomechanical control in a single, $μ$m-sized potential trap for phonons and exciton-polariton condensates in a structured semiconductor microcavity. The exciton-enhanced optomechanical coupling leads to self-oscillations (phonon lasing) -- thus proving reversible photon-to-phonon conversion. We show that these oscillations are a signature of the optomechanical strong coupling signalizing the emergence of elusive phonon-exciton-photon quasiparticles -- the phonoritons. We then demonstrate full control of the phonoriton spectrum as well as coherent microwave-to-photon interconversion using electrically generated GHz-vibrations and a resonant optical laser beam. These findings establish the zero-dimensional polariton condensates as a scalable coherent interface between microwave and optical domains with enhanced microwave-to-mechanical and mechanical-to-optical coupling rates. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Journal ref: Nat Commun 14, 5470 (2023)

Scanning X-ray diffraction microscopy of a 6 GHz surface acoustic wave

Authors: M. Hanke, N. Ashurbekov, E. Zatterin, M. E. Msall, J. Hellemann, P. V. Santos, T. U. Schulli, S. Ludwig

Abstract: Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattic… ▽ More Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattice distortions perpendicular to the surface are phase-shifted compared to those in propagation direction. Model calculations based on Rayleigh waves confirm our measurements. Our results represent a break through in providing a full characterization of a radio frequency surface acoustic wave beyond plain imaging. △ Less

Submitted 28 September, 2022; originally announced September 2022.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. Applied 19, 024038 (2023)

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Authors: Dominik D. Bühler, Matthias Weiß, Antonio Crespo-Poveda, Emeline D. S. Nysten, Jonathan J. Finley, Kai Müller, Paulo V. Santos, Mauricio M. de Lima Jr., Hubert J. Krenner

Abstract: Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit compris… ▽ More Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors. △ Less

Submitted 16 August, 2022; v1 submitted 21 February, 2022; originally announced February 2022.

Journal ref: Nature Communications 13,6998 (2022)

Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects

Authors: C. A. Bravo-Velazquez, L. F Lastras-Martinez, O. Ruiz-Cigarrillo, G. Flores-Rangel, L. E Tapia-Rodriguez, K. Biermann, P. V. Santos

Abstract: Circularly polarized photoluminescence (PL) spectroscopy measured at 19 K on GaAs/AlGaAs symmetric and asymmetric double quantum wells (DQW) is reported. The PL is obtained by exciting the sample with a circularly polarized (left or right) laser in order to create an initial unbalanced distribution of electron spins in the conduction band and, in this way, obtain the electron spin lifetime $τ_s$.… ▽ More Circularly polarized photoluminescence (PL) spectroscopy measured at 19 K on GaAs/AlGaAs symmetric and asymmetric double quantum wells (DQW) is reported. The PL is obtained by exciting the sample with a circularly polarized (left or right) laser in order to create an initial unbalanced distribution of electron spins in the conduction band and, in this way, obtain the electron spin lifetime $τ_s$. The effects of the excitation laser wavelength were estimated by exciting with laser wavelengths of 701.0 nm, 787.0 nm, 801.5 nm and 806.5 nm. The increase of $τ_s$ with the excitation wavelength is attributed to the lower initial quasi-momentum $\bf{k}$ of the excited carriers, which also reduces spin-orbit relaxation processes. $τ_s$ was found to be higher in asymmetric DQWs: this is attributed to the wider QWs in these samples, which reduces spin relaxation due to the Dresselhaus mechanism. In addition, we also detected a smaller contribution from the Rashba mechanism by comparing samples with built-in electric fields of different orientations defined by doped barrier layers. △ Less

Submitted 25 January, 2022; originally announced January 2022.

Comments: 12 pages, 5 figures

GHz guided optomechanics in planar semiconductor microcavities

Authors: Antonio Crespo-Poveda, Alexander S. Kuznetsov, Alberto Hernández-Mínguez, Abbes Tahraoui, Klaus Biermann, Paulo V. Santos

Abstract: Hybrid opto, electro, and mechanical systems operating at several GHz offer extraordinary opportunities for the coherent control of opto-electronic excitations down to the quantum limit. We introduce here a monolithic platform for GHz semiconductor optomechanics based on electrically excited phonons guided along the spacer of a planar microcavity (MC) embedding quantum well (QW) emitters. The MC s… ▽ More Hybrid opto, electro, and mechanical systems operating at several GHz offer extraordinary opportunities for the coherent control of opto-electronic excitations down to the quantum limit. We introduce here a monolithic platform for GHz semiconductor optomechanics based on electrically excited phonons guided along the spacer of a planar microcavity (MC) embedding quantum well (QW) emitters. The MC spacer bound by cleaved lateral facets acts as an embedded acoustic waveguide (WG) cavity with a high quality factor ($Q\sim10^5$) at frequencies well beyond 6~GHz, along which the acoustic modes live over tens of $μ$s. The strong acoustic fields and the enhanced optomechanical coupling mediated by electronic resonances induce a huge modulation of the energy (in the meV range) and strength (over 80\%) of the QW photoluminescence (PL), which, in turn, becomes a sensitive local phonon probe. Furthermore, we show the coherent coupling of acoustic modes at different sample depths, thus opening the way for phonon-mediated coherent control and interconnection of three-dimensional epitaxial nanostructures. △ Less

Submitted 17 January, 2022; originally announced January 2022.

Comments: 5 Figures

Optomechanical parametric oscillation of a quantum light-fluid lattice

Authors: A. A. Reynoso, G. Usaj, D. L. Chafatinos, F. Mangussi, A. E. Bruchhausen, A. S. Kuznetsov, K. Biermann, P. V. Santos, A. Fainstein

Abstract: Two-photon coherent states are one of the main building pillars of non-linear and quantum optics. It is the basis for the generation of minimum-uncertainty quantum states and entangled photon pairs, applications not obtainable from standard coherent states or one-photon lasers. Here we describe a fully-resonant optomechanical parametric amplifier involving a polariton condensate in a trap lattice… ▽ More Two-photon coherent states are one of the main building pillars of non-linear and quantum optics. It is the basis for the generation of minimum-uncertainty quantum states and entangled photon pairs, applications not obtainable from standard coherent states or one-photon lasers. Here we describe a fully-resonant optomechanical parametric amplifier involving a polariton condensate in a trap lattice quadratically coupled to mechanical modes. The quadratic coupling derives from non-resonant virtual transitions to extended discrete excited states induced by the optomechanical coupling. Non-resonant continuous wave (cw) laser excitation leads to striking experimental consequences, including the emergence of optomechanically induced inter-site parametric oscillations and inter-site tunneling of polaritons at discrete inter-trap detunings corresponding to sums of energies of the two involved mechanical oscillations (20 and 60 GHz confined vibrations). We show that the coherent mechanical oscillations correspond to parametric resonances with threshold condition different to that of standard linear optomechanical self-oscillation. The associated Arnold tongues display a complex scenario of states within the instability region. The observed new phenomena can have applications for the generation of entangled phonon pairs, squeezed mechanical states relevant in sensing and quantum computation, and for the bidirectional frequency conversion of signals in a technologically relevant range. △ Less

Submitted 30 December, 2021; originally announced December 2021.

Comments: 13 pages, 3 figures

Journal ref: Phys. Rev. B 105, 195310 (2022), Featured in Physics and Editors' Suggestion

Asynchronous Locking in Metamaterials of Fluids of Light and Sound

Authors: D. L. Chafatinos, A. S. Kuznetsov, A. A. Reynoso, G. Usaj, P. Sesin, I. Papuccio, A. E. Bruchhausen, K. Biermann, P V. Santos, A. Fainstein

Abstract: Phonons, the quanta of vibrations, are very important for the equilibrium and dynamical properties of matter. GHz coherent phonons can also interact with and act as interconnects in a wide range of quantum systems. Harnessing and tailoring their coupling to opto-electronic excitations thus becomes highly relevant for engineered materials for quantum technologies. With this perspective we introduce… ▽ More Phonons, the quanta of vibrations, are very important for the equilibrium and dynamical properties of matter. GHz coherent phonons can also interact with and act as interconnects in a wide range of quantum systems. Harnessing and tailoring their coupling to opto-electronic excitations thus becomes highly relevant for engineered materials for quantum technologies. With this perspective we introduce polaromechanical metamaterials, two-dimensional arrays of $μ$m-size zero-dimensional traps confining light-matter polariton fluids and GHz phonons. A strong exciton-mediated polariton-phonon interaction determines the inter-site polariton coupling with remarkable consequences for the dynamics. When locally perturbed by optical excitation, polaritons respond by locking the energy detuning between neighbor sites at integer multiples of the phonon energy, evidencing synchronization involving the polariton and phonon fields. These results open the path for the coherent control of quantum light fluids with hypersound in a scalable platform. △ Less

Submitted 21 November, 2022; v1 submitted 1 December, 2021; originally announced December 2021.

Comments: 31 pages, 19 figures

Journal ref: Nature Communications 14, 3485 (2023)

Atomic force microscopy calibration of standing surface acoustic wave amplitudes

Authors: Jan Hellemann, Filipp Müller, Madeleine Msall, Paulo V. Santos, Stefan Ludwig

Abstract: Atomic force microscopy is an important tool for characterizing surface acoustic waves, in particular for high frequencies, where the wavelength is too short to be resolved by laser interferometry. A caveat is, that the cantilever deflection is not equal to the amplitude of the surface acoustic wave. We show, that the energy transfer from the moving surface to the cantilever instead leads to a def… ▽ More Atomic force microscopy is an important tool for characterizing surface acoustic waves, in particular for high frequencies, where the wavelength is too short to be resolved by laser interferometry. A caveat is, that the cantilever deflection is not equal to the amplitude of the surface acoustic wave. We show, that the energy transfer from the moving surface to the cantilever instead leads to a deflection exceeding the surface modulation. We present a method for an accurate calibration of surface acoustic wave amplitudes based on comparing force-curve measurements with the equation of motion of a driven cantilever. We demonstrate our method for a standing surface acoustic wave on a GaAs crystal confined in a focusing cavity with a resonance frequency near 3 GHz. △ Less

Submitted 21 November, 2021; originally announced November 2021.

Comments: 9 pages, 11 figures

Journal ref: Phys. Rev. Applied 17, 044024 (2022)

Flying electron spin control gates

Authors: Paul L. J. Helgers, James A. H. Stotz, Haruki Sanada, Yoji Kunihashi, Klaus Biermann, Paulo V. Santos

Abstract: The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contac… ▽ More The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spin. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface. △ Less

Submitted 21 November, 2021; originally announced November 2021.

Comments: 11 pages, 6 figures; Supplementary Material 9 pages, 7 figures

Optical anisotropies of asymmetric double GaAs (001) Quantum Wells

Authors: O. Ruiz-Cigarrillo, L. F. Lastras-Martínez, E. A. Cerda-Méndez, G. Flores-Rangel, C. A. Bravo-Velazquez, R. E. Balderas-Navarro, A. Lastras-Martínez, N. A. Ulloa-Castillo, K. Biermann, P. V. Santos

Abstract: In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from $D_{2d}$ to $C_{2v}$ as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin ($<2$ nm) tunneling b… ▽ More In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from $D_{2d}$ to $C_{2v}$ as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin ($<2$ nm) tunneling barrier. Two groups of DQWs systems were studied: one where both QWs have the same thickness (symmetric DQW) and another one where they have different thicknesses (asymmetric DQW). RAS measures the IOAs arising from the intermixing of the heavy- and light- holes in the valence band when the symmetry of the DQW system is lowered from $D_{2d}$ to $C_{2v}$. If the DQW is symmetric, residual IOAs stem from the asymmetry of the QW interfaces; for instance, associated to Ga segregation into the AlGaAs layer during the epitaxial growth process. In the case of an asymmetric DQW with QWs with different thicknesses, the AlGaAs layers (that are sources of anisotropies) are not distributed symmetrically at both sides of the tunneling barrier. Thus, the system losses its inversion symmetry yielding an increase of the RAS strength. The RAS line shapes were compared with reflectance spectra in order to assess the heavy- and light- hole mixing induced by the symmetry breakdown. The energies of the optical transitions were calculated by numerically solving the one-dimensional Schrödinger equation using a finite-differences method. Our results are useful for interpretation of the transitions occurring in both, symmetric and asymmetric DQWs. △ Less

Submitted 12 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. B103, 035309 (2021)

Acoustically induced coherent spin trapping

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that str… ▽ More Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Comments: 6 pages, 4 figures, and Supplementary Information

Journal ref: Sci. Adv. 7, eabj5030 (2021)

Remotely pumped GHz antibunched emission from single exciton centers in GaAs

Authors: M. Yuan, K. Biermann, S. Takada, C. Bäuerle, P. V. Santos

Abstract: Quantum communication networks require on-chip transfer and manipulation of single particles as well as their interconversion to single photons for long-range information exchange. Flying excitons propelled by GHz surface acoustic waves (SAWs) are outstanding messengers to fulfill these requirements. Here, we demonstrate the acoustic manipulation of single exciton centers consisting of individual… ▽ More Quantum communication networks require on-chip transfer and manipulation of single particles as well as their interconversion to single photons for long-range information exchange. Flying excitons propelled by GHz surface acoustic waves (SAWs) are outstanding messengers to fulfill these requirements. Here, we demonstrate the acoustic manipulation of single exciton centers consisting of individual excitons bound to shallow impurities centers embedded in a semiconductor quantum well. Time-resolved photoluminescence studies show that the emission intensity and energy from these centers oscillate at the SAW frequency of 3.5 GHz. Furthermore, these centers can be remotely pumped via acoustic transport of flying excitons along a quantum well channel over several microns. Time correlation studies reveal that the centers emit anti-bunched light, thus acting as single-photon sources operating at GHz frequencies. Our results pave the way for the exciton-based on-demand manipulation and on-chip transfer of single excitons at microwave frequencies with a natural photonic interface. △ Less

Submitted 9 March, 2021; v1 submitted 11 May, 2020; originally announced May 2020.

Comments: Main text: 20 pages, 5 figures. Supporting Information: 5 pages, 4 figures

Journal ref: ACS Photonics 8 (2021) 758-764

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

Authors: A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov

Abstract: We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the st… ▽ More We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature. △ Less

Submitted 2 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures, Supplemental Information

Journal ref: Phys. Rev. Lett. 125, 107702 (2020)

Thermally Tunable Surface Acoustic Wave Cavities

Authors: André Luiz Oliveira Bilobran, Alberto García-Cristóbal, Paulo Ventura dos Santos, Andrés Cantarero, Mauricio Morais de Lima Jr

Abstract: We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a DC voltage to the ends of the metal grid results in a temperature rise due to resistive heating that changes the frequency response of the device up to 0.3%, which can be used to control the acoustic tran… ▽ More We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a DC voltage to the ends of the metal grid results in a temperature rise due to resistive heating that changes the frequency response of the device up to 0.3%, which can be used to control the acoustic transmission through the structure. The time scale of the switching is demonstrated to be of about 200 ms. In addition, we have also performed finite element simulations of the transmission spectrum of a model system which exhibit a temperature dependence consistent with the experimental data. The advances shown here enable easy, continuous, dynamical control and could be applied for a variety of substrates. △ Less

Submitted 12 March, 2020; v1 submitted 11 March, 2020; originally announced March 2020.

Dynamically Tuned Arrays of Polariton Parametric Oscillators

Authors: Alexander S. Kuznetsov, Galbadrakh Dagvadorj, Klaus Biermann, Marzena Szymanska, Paulo V. Santos

Abstract: Optical parametric oscillations (OPOs) - a non-linear process involving the coherent coupling of an optically excited two particle pump state to a signal and an idler states with different energies - is a relevant mechanism for optical amplification as well as for the generation of correlated photons. OPOs require states with well-defined symmetries and energies: the fine-tuning of material proper… ▽ More Optical parametric oscillations (OPOs) - a non-linear process involving the coherent coupling of an optically excited two particle pump state to a signal and an idler states with different energies - is a relevant mechanism for optical amplification as well as for the generation of correlated photons. OPOs require states with well-defined symmetries and energies: the fine-tuning of material properties and structural dimensions to create these states remains a challenge for the realization of scalable OPO-based functionalities in semiconductor nanostructures. Here, we demonstrate a pathway towards this goal based on the control of confined microcavity exciton-polaritons modulated by the spatially and time varying dynamical potentials produced by a surface acoustic waves (SAW). The exciton-polariton are confined in um-sized intra-cavity traps fabricated by structuring a planar semiconductor microcavity during the epitaxial growth process. OPOs in these structures benefit from the enhanced non-linearities of confined systems. We show that SAW fields induce state-dependent and time-varying energy shifts, which enable the energy alignment of the confined levels with the appropriate symmetry for OPO triggering. Furthermore, the dynamic acoustic tuning, which is fully described by a theoretical model for the modulation of the confined polaritons by the acoustic field, compensates for fluctuations in symmetry and dimensions of the confinement potential thus enabling a variety of dynamic OPO regimes. The robustness of the acoustic tuning is demonstrated by the synchronous excitation of an array of confined OPOs using a single acoustic beam, thus opening the way for the realization of scalable non-linear on-chip systems. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Comments: Main text: 10 pages, 7 figures Supplementary: 6 pages, 3 figures

Electrically driven exciton-polariton optomechanics at super high frequencies

Authors: Alexander S. Kuznetsov, Diego H. O. Machado, Klaus Biermann, Paulo V. Santos

Abstract: Polaritons enable the resonant coupling of excitons and photons to vibrations in the application-relevant super high frequency (SHF, 3-30 GHz) domain. We introduce a novel platform for coherent optomechanics based on the coupling of exciton-polaritons and electrically driven SHF longitudinal acoustic phonons confined within the spacer region of a planar Bragg microcavity. An intrinsic property of… ▽ More Polaritons enable the resonant coupling of excitons and photons to vibrations in the application-relevant super high frequency (SHF, 3-30 GHz) domain. We introduce a novel platform for coherent optomechanics based on the coupling of exciton-polaritons and electrically driven SHF longitudinal acoustic phonons confined within the spacer region of a planar Bragg microcavity. An intrinsic property of the microcavity platform is the back-feeding of phonons via reflections at the sample boundaries, which enables frequency x quality factors products exceeding 10^14 Hz as well as huge modulation amplitudes of the optical transition energies (up to 8 meV). We show that the modulation is dominated by the phonon-induced energy shifts of the excitonic polariton component, thus leading to an oscillatory transition between the regimes of weak and strong light-matter coupling. These results open the way for polariton-based coherent optomechanics in the non-adiabatic, side-band-resolved regime of coherent control. △ Less

Submitted 20 June, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. X 11, 021020 (2021)

Cavity Optomechanics with Polariton Bose-Einstein Condensates

Authors: D. L. Chafatinos, A. S. Kuznetsov, A. E. Bruchhausen, A. A. Reynoso, K. Biermann, P. V. Santos, A. Fainstein

Abstract: We report the experimental study of a hybrid quantum solid state system comprising two-level artificial atoms coupled to cavity confined optical and vibrational modes. In this system combining cavity quantum electrodynamics and cavity optomechanics, excitons in quantum wells play the role of the two-level atoms and are strongly coupled to the optical field leading to mixed polariton states. The pl… ▽ More We report the experimental study of a hybrid quantum solid state system comprising two-level artificial atoms coupled to cavity confined optical and vibrational modes. In this system combining cavity quantum electrodynamics and cavity optomechanics, excitons in quantum wells play the role of the two-level atoms and are strongly coupled to the optical field leading to mixed polariton states. The planar optical microcavities are laterally microstructured, so that polaritons can be confined in wires, 3D traps, and arrays of traps, providing an additional tuning degree of freedom for the polariton energies. Upon increasing the non-resonant laser excitation power, a Bose-Einstein condensation of the polaritons is observed. Optomechanical induced amplification type of experiments with an additional weak laser probe clearly identify the coupling of these Bose-Einstein condensates to 20~GHz breathing-like vibrations confined in the same cavities. With single continuous wave non-resonant laser excitation, and once the laser power overpasses the threshold for Bose-Einstein condensation in trap arrays, mechanical self-oscillation similar to phonon ``lasing'' is induced with the concomitant observation of Mollow-triplet type mechanical sidebands on the Bose-Einstein condensate emission. High-resolution spectroscopic photoluminescence experiments evidence that these vibrational side-band resolved lines are enhanced when neighboring traps are red-detuned with respect to the BEC emission at overtones of the fundamental 20 GHz breathing mode frequency. These results constitute the first demonstration of coherent cavity polariton optomechanics and pave the way towards a novel type of hybrid devices for quantum technologies, phonon lasers, and phonon-photon bidirectional translators. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Comments: 16 pages, 11 figures

Journal ref: Nature Communications 11, 4552 (2020). Polariton-driven phonon laser

Large non-reciprocal propagation of surface acoustic waves in epitaxial ferromagnetic/semiconductor hybrid structures

Authors: A. Hernández-Mínguez, F. Macià, J. M. Hernàndez, J. Herfort, P. V. Santos

Abstract: Non-reciprocal propagation of sound, that is, the different transmission of acoustic waves traveling along opposite directions, is a challenging requirement for the realization of devices like acoustic isolators and circulators. Here, we demonstrate the efficient non-reciprocal transmission of surface acoustic waves (SAWs) propagating along opposite directions of a GaAs substrate coated with an ep… ▽ More Non-reciprocal propagation of sound, that is, the different transmission of acoustic waves traveling along opposite directions, is a challenging requirement for the realization of devices like acoustic isolators and circulators. Here, we demonstrate the efficient non-reciprocal transmission of surface acoustic waves (SAWs) propagating along opposite directions of a GaAs substrate coated with an epitaxial Fe$_3$Si film. The non-reciprocity arises from the acoustic attenuation induced by the magneto-elastic (ME) interaction between the SAW strain field and spin waves in the ferromagnetic film, which depends on the SAW propagation direction and can be controlled via the amplitude and orientation of an external magnetic field. The acoustic transmission non-reciprocity, defined as the difference between the transmitted acoustic power for forward and backward propagation under ME resonance, reaches values of up to 20%, which are, to our knowledge, the largest non-reciprocity reported for SAWs traveling along a semiconducting piezoelectric substrate covered by a ferromagnetic film. The experimental results are well accounted for by a model for ME interaction, which also shows that non-reciprocity can be further enhanced by optimization of the sample design. These results make Fe$_3$Si/GaAs a promising platform for the realization of efficient non-reciprocal SAW devices. △ Less

Submitted 11 March, 2020; v1 submitted 25 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Applied 13, 044018 (2020)

Attractive interactions, molecular complexes, and polarons in coupled dipolar exciton fluids

Authors: C. Hubert, K. Cohen, A. Ghazaryan, M. Lemeshko, R. Rapaport, P. V. Santos

Abstract: Dipolar (or spatially indirect) excitons (IXs) in semiconductor double quantum well (DQW) subjected to an electric field are neutral species with a dipole moment oriented perpendicular to the DQW plane. Here, we theoretically study interactions between IXs in stacked DQW bilayers, where the dipolar coupling can be either attractive or repulsive depending on the relative positions of the particles.… ▽ More Dipolar (or spatially indirect) excitons (IXs) in semiconductor double quantum well (DQW) subjected to an electric field are neutral species with a dipole moment oriented perpendicular to the DQW plane. Here, we theoretically study interactions between IXs in stacked DQW bilayers, where the dipolar coupling can be either attractive or repulsive depending on the relative positions of the particles. By using microscopic band structure calculations to determine the electronic states forming the excitons, we show that the attractive dipolar interaction between stacked IXs deforms their electronic wave function, thereby increasing the inter-DQW interaction energy and making the IX electrically polarizable. Many-particle effects interaction are addressed by considering the coupling between a single IX in one of the DQWs to a cloud of IXs in the other DQW, which is modeled either as a closed-packed lattice or as a continuum IX fluid. We find that the lattice model yields IX interlayer binding energies decreasing with increasing lattice density. This behavior is due to the dominating role of the intra-DQW dipolar repulsion, which prevents more than one exciton from entering the attractive region of the inter-DQW coupling. Finally, both models shows that the single IX distorts the distribution of IXs in the adjacent DQW, thus inducing the formation of an IX polaron. While the interlayer binding energy reduces with IX density for lattice polarons, the continuous polaron model predicts a non-monotonous dependence on density in semi-quantitative agreement with a recent experimental study [cf. Hubert {\it et al.}, Phys. Rev. {\bf X}9, 021026 (2019)]. △ Less

Submitted 22 October, 2019; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 12 figures, 12 pages

Journal ref: Phys. Rev. B 102, 045307 (2020)

Dynamic local strain in graphene generated by surface acoustic waves

Authors: Rajveer Fandan, Jorge Pedrós, Alberto Hernández-Mínguez, Fernando Iikawa, Paulo V. Santos, Alberto Boscá, Fernando Calle

Abstract: We experimentally demonstrate that the Raman active optical phonon modes of single layer graphene can be modulated by the dynamic local strain created by surface acoustic waves (SAWs). In particular, the dynamic strain field of the SAW is shown to induce a Raman scattering intensity variation as large as 15% and a phonon frequency shift of up to 10 cm$^{-1}$ for the G band, for instance, for an ef… ▽ More We experimentally demonstrate that the Raman active optical phonon modes of single layer graphene can be modulated by the dynamic local strain created by surface acoustic waves (SAWs). In particular, the dynamic strain field of the SAW is shown to induce a Raman scattering intensity variation as large as 15% and a phonon frequency shift of up to 10 cm$^{-1}$ for the G band, for instance, for an effective hydrostatic strain of 0.24% generated in a single layer graphene atop a LiNbO$_{3}$ piezoelectric substrate with a SAW resonator operating at a frequency of $ \sim $ 400 MHz. Thus, we demonstrate that SAWs are powerful tools to modulate the optical and vibrational properties of supported graphene by means of the high-frequency localized deformations tailored by the acoustic transducers, which can also be extended to other 2D systems. △ Less

Submitted 27 September, 2019; originally announced September 2019.

Comments: 10 pages, 7 figures

Journal ref: Nano Letters 2020 20 (1), 402-409

Generation and propagation of super-high-frequency bulk acoustic wave in GaAs

Authors: Diego H. O. Machado, Antonio Crespo-Poveda, Alexander S. Kuznetsov, Klaus Biermann, Luis V. A. Scalvi, Paulo V. Santos

Abstract: Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals using bulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. We show that the elect… ▽ More Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals using bulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. We show that the electro-acoustic conversion efficiency of the BAWRs depends sensitively on the sputtering conditions of the ZnO films. The BAWRs were then used for the study of the propagation properties of the LBAWs in GaAs in the frequency and temperature ranges from 1 to 20 GHz and 10 and 300 K, respectively, which have so far not been experimentally accessed. We found that the intrinsic acoustic absorption of GaAs in the temperature range from 80 K to 300 K is dominated by scattering with thermal phonons. At lower temperatures, in contrast, the intrinsic acoustic absorption saturates at a frequency-dependent value. Experiments carried out with different propagation lengths indicate that the saturation is associated with losses during reflection at the sample boundaries. We also demonstrate devices with high quality factor fabricated on top of acoustic Bragg-reflectors. The results presented here prove the feasibility of high-quality acoustic resonators embedding GaAs-based nanostructures, thus opening the way for the modulation and control of their properties by electrically excited SHF LBAWs. △ Less

Submitted 4 September, 2019; v1 submitted 23 July, 2019; originally announced July 2019.

Comments: Research article

Journal ref: Phys. Rev. Applied 12, 044013 (2019)

Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

Authors: B Jenichen, U Jahn, A Nikulin, R Hey, P V Santos, K J Friedland

Abstract: We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is established. The layer thickness fluctuation studied by atomic force microscopy, x-ray scattering, and spatially resolved cathodoluminescence spectroscopy occu… ▽ More We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is established. The layer thickness fluctuation studied by atomic force microscopy, x-ray scattering, and spatially resolved cathodoluminescence spectroscopy occurs on two different lateral length scales. On the shorter length scale of about 0.01~$μ$m, we found from atomic force micrographs and the broadening of the satellite maxima in x-ray diffraction curves a very small value of the mean square roughness of 0.1~nm. However, on a longer length scale of about 1.0~$μ$m, step bunching during epitaxial growth resulted in layer thickness inhomogeneities of up to 2~nm. The resulting fluctuation of the strain in the micro-tubes leads to a local variation of the chemical potential, which results in the fluctuation of the carrier density as well. This leads to a phase cancelation of the Shubnikov-de-Haas oscillations in the curved HM2DEG and a reduction of the single-electron scattering time, while the electron mobility in the structures remains high. The estimated fluctuation of the carrier density agrees well with the energy fluctuation measured in the cathodoluminescence spectra of the free-electron transition of the quantum well. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 86, 155309 (2012)

Electrical suppression of spin relaxation in GaAs(111)B Quantum Wells

Authors: A. Hernández-Mínguez, K. Biermann, R. Hey, P. V. Santos

Abstract: Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression has been attributed to the compensation of the intrinsic SOI associated by the bulk inversion asymmetry (BIA) of the GaAs lattice by a structural indu… ▽ More Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression has been attributed to the compensation of the intrinsic SOI associated by the bulk inversion asymmetry (BIA) of the GaAs lattice by a structural induced asymmetry (SIA) SOI term induced by an electric field. We provide direct experimental evidence for this mechanism by demonstrating the transition between the BIA-dominated to a SIA-dominated regime via photoluminescence measurements carried out over a wide range of applied fields. Spin lifetimes exceeding 100~ns are obtained near the compensating electric field, thus making GaAs (111) QWs excellent candidates for the electrical storage and manipulation of spins. △ Less

Submitted 22 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Lett. 109, 266602 (2012)

Acoustoelectric transport at gigahertz frequencies in coated epitaxial graphene

Authors: A. Hernández-Mínguez, A. Tahraoui, J. M. J. Lopes, P. V. Santos

Abstract: Epitaxial graphene (EG) produced from SiC surfaces by silicon sublimation is emerging as a material for electronic applications due to its good electronic properties and availability over large areas on a semiconducting substrate. In this contribution, we report on the transport of charge carriers in EG on SiC using high-frequency ($>$ 1 GHz) surface acoustic waves (SAWs). In our devices, the EG i… ▽ More Epitaxial graphene (EG) produced from SiC surfaces by silicon sublimation is emerging as a material for electronic applications due to its good electronic properties and availability over large areas on a semiconducting substrate. In this contribution, we report on the transport of charge carriers in EG on SiC using high-frequency ($>$ 1 GHz) surface acoustic waves (SAWs). In our devices, the EG is coated with hydrogen-silsesquioxane, SiO$_2$ and a ZnO layer. This allows the efficient generation of SAWs and is compatible with the deposition of a metal top gate. Measurements of frequency- and time-resolved power scattering parameters confirm the generation and propagation of SAWs with frequencies of up to more than 7 GHz. Furthermore, the ZnO coating enhances the acoustoelectric currents by two orders of magnitude as compared to our previous uncoated samples. These results are an important step towards the dynamic acoustic control of charge carriers in graphene at gigahertz frequencies. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://aip.scitation.org/doi/10.1063/1.4949756

Journal ref: Appl. Phys. Lett. 108, 193502 (2016)

Electric control of spin transport in GaAs (111) quantum wells

Authors: A. Hernández-Mínguez, K. Biermann, R. Hey, P. V. Santos

Abstract: We show by spatially and time-resolved photoluminescence that the application of an electric field transverse to the plane of an intrinsic GaAs (111) quantum well (QW) allows the transport of photogenerated electron spins polarized along the direction perpendicular to the QW plane over distances exceeding 10~$μ$m. We attribute the long spin transport lengths to the compensation of the in-plane eff… ▽ More We show by spatially and time-resolved photoluminescence that the application of an electric field transverse to the plane of an intrinsic GaAs (111) quantum well (QW) allows the transport of photogenerated electron spins polarized along the direction perpendicular to the QW plane over distances exceeding 10~$μ$m. We attribute the long spin transport lengths to the compensation of the in-plane effective magnetic field related to the intrinsic spin-orbit (SO) interaction by means of the electrically generated SO-field. Away from SO-compensation, the precession of the spin vector around the SO-field decreases the out-of-plane polarization of the spin ensemble as the electrons move away from the laser generation spot. The results are reproduced by a model for two-dimensional drift-diffusion of spin polarized charge carriers under weak SO-interaction. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 94, 125311 (2016)

Sound-driven single-electron transfer in a circuit of coupled quantum rails

Authors: Shintaro Takada, Hermann Edlbauer, Hugo V. Lepage, Junliang Wang, Pierre-André Mortemousque, Giorgos Georgiou, Crispin H. W. Barnes, Chris J. B. Ford, Mingyun Yuan, Paulo V. Santos, Xavier Waintal, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle

Abstract: Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we… ▽ More Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits. △ Less

Submitted 23 September, 2019; v1 submitted 2 March, 2019; originally announced March 2019.

Comments: Accepted for Publication in Nature Communications

Journal ref: Nature Communications 10, 4557 (2019)

Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy

Authors: A. Hernández-Mínguez, J. Lähnemann, S. Nakhaie, J. M. J. Lopes, P. V. Santos

Abstract: We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO$_2$/Si substrate, sharp lines are observed in photo- and cathodoluminescence spectra in both the ultraviolet and the visible range. Spatially resolved measurements reveal that the luminescent centers responsible for these lines are local… ▽ More We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO$_2$/Si substrate, sharp lines are observed in photo- and cathodoluminescence spectra in both the ultraviolet and the visible range. Spatially resolved measurements reveal that the luminescent centers responsible for these lines are localized within microscopic multi-layer islands that form at the nucleation centers of the h-BN film. The comparison of their energy, polarization and phonon replica emission with previous theoretical predictions suggest that the N$_\mathrm{B}$V$_\mathrm{N}$ anti-site could be one of the light emitters present in our sample. Moreover, we have also observed evidences of other kinds of centers that could be associated to defects containing carbon or oxygen. The characterized luminescent defects could have potential applications as quantum light sources. △ Less

Submitted 22 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Appl. 10, 044031 (2018)

Acoustically modulated optical emission of hexagonal boron nitride layers

Authors: F. Iikawa, A. Hernández-Mínguez, I. Aharonovich, S. Nakhaie, Y. -T. Liou, J. M. J. Lopes, P. V. Santos

Abstract: We investigate the effect of surface acoustic waves on the atomic-like optical emission from defect centers in hexagonal boron nitride layers deposited on the surface of a LiNbO$_3$ substrate. The dynamic strain field of the surface acoustic waves modulates the emission lines resulting in intensity variations as large as 50% and oscillations of the emission energy with an amplitude of almost 1 meV… ▽ More We investigate the effect of surface acoustic waves on the atomic-like optical emission from defect centers in hexagonal boron nitride layers deposited on the surface of a LiNbO$_3$ substrate. The dynamic strain field of the surface acoustic waves modulates the emission lines resulting in intensity variations as large as 50% and oscillations of the emission energy with an amplitude of almost 1 meV. From a systematic study of the dependence of the modulation on the acoustic wave power, we determine a hydrostatic deformation potential for defect centers in this two-dimensional material of about 40 meV/%. Furthermore, we show that the dynamic piezoelectric field of the acoustic wave could contribute to the stabilization of the optical properties of these centers. Our results show that surface acoustic waves are a powerful tool to modulate and control the electronic states of two-dimensional materials. △ Less

Submitted 16 August, 2019; v1 submitted 22 February, 2019; originally announced February 2019.

Journal ref: Appl. Phys. Lett. 114, 171104 (2019)

Control of single photon emitters in semiconductor nanowires by surface acoustic waves

Authors: S. Lazić, A. Hernández-Mínguez, P. V. Santos

Abstract: We report on experimental study into the effects of surface acoustic waves on the optical emission of dot-in-a-nanowire heterostructures in III-V material systems. Under direct optical excitation, the excitonic energy levels in III-nitride dot-in-a-nanowire heterostructures oscillate at the acoustic frequency, producing a characteristic splitting of the emission lines in the time-integrated photol… ▽ More We report on experimental study into the effects of surface acoustic waves on the optical emission of dot-in-a-nanowire heterostructures in III-V material systems. Under direct optical excitation, the excitonic energy levels in III-nitride dot-in-a-nanowire heterostructures oscillate at the acoustic frequency, producing a characteristic splitting of the emission lines in the time-integrated photoluminescence spectra. This acoustically induced periodic tuning of the excitonic transition energies is combined with spectral detection filtering and employed as a tool to regulate the temporal output of anti-bunched photons emitted from these nanowire quantum dots. In addition, the acoustic transport of electrons and holes along a III-arsenide nanowire injects the electric charges into an ensemble of quantum dot-like recombination centers that are spatially separated from the optical excitation area. The acoustic population and depopulation mechanism determines the number of carrier recombination events taking place simultaneously in the ensemble, thus allowing a control of the anti-bunching degree of the emitted photons. The present results are relevant for the dynamic control of single photon emission in III-V semiconductor heterostructures. △ Less

Submitted 22 February, 2019; originally announced February 2019.

Journal ref: Semicond. Sci. Technol. 32, 084002 (2017)

Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots

Authors: S. Lazic, E. Chernysheva, A. Hernández-Mínguez, P. V. Santos, H. P. van der Meulen

Abstract: On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface ac… ▽ More On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies). △ Less

Submitted 21 February, 2019; originally announced February 2019.

Comments: arXiv admin note: text overlap with arXiv:1902.07918

Journal ref: Journal of Physics: Conf. Series 1092 (2018) 012075

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Authors: S. Lazic, E. Chernysheva, A. Hernández-Mínguez, P. V. Santos, H. P. van der Meulen

Abstract: We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and… ▽ More We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures. △ Less

Submitted 21 February, 2019; originally announced February 2019.

Comments: 14 pages, 5 figures

Journal ref: J. Phys. D: Appl. Phys. 51 (2018) 104001

Sidewall quantum wires on GaAs(001) substrates

Authors: Paul L. J. Helgers, Haruki Sanada, Yoji Kunihashi, Klaus Biermann, Paulo V. Santos

Abstract: We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a consequence of material accumulation on the sidewalls of the ridges during the overgrowth of a quantum well (QW) on the patterned surface. The QWRs are approximately… ▽ More We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a consequence of material accumulation on the sidewalls of the ridges during the overgrowth of a quantum well (QW) on the patterned surface. The QWRs are approximately 200 nm-wide and have emission energies red-shifted by 27meV with respect to the surrounding QW. Spatially resolved spectroscopic photoluminencence studies indicate that the QW thickness reduces around the QWRs, thus creating a 4 meV energy barrier for the transfer of carriers from the QW to the QWR. We show that the QWRs act as efficient channels for the transport of optically excited electrons and holes over tens of μm by a high-frequency surface acoustic wave (SAW). These results demonstrate the feasibility of efficient ambipolar transport in QWRs with sub-micrometer dimensions, photolithographically defined on GaAs substrates. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. Applied 11, 064017 (2019)

Interaction of surface acoustic waves with electronic excitations in graphene

Authors: A. Hernández-Mínguez, Y. -T. Liou, P. V. Santos

Abstract: This article reviews the main theoretical and experimental advances regarding the interaction between surface acoustic waves (SAWs) and electronic excitations in graphene. The coupling of the graphene electron gas to the SAW piezoelectric field can modify the propagation properties of the SAW, and even amplify the intensity of SAWs traveling along the graphene layer. Conversely, the periodic elect… ▽ More This article reviews the main theoretical and experimental advances regarding the interaction between surface acoustic waves (SAWs) and electronic excitations in graphene. The coupling of the graphene electron gas to the SAW piezoelectric field can modify the propagation properties of the SAW, and even amplify the intensity of SAWs traveling along the graphene layer. Conversely, the periodic electric and strain fields of the SAW can be used to modify the graphene Dirac cone and to couple light into graphene plasmons. Finally, SAWs can generate acousto-electric currents in graphene. These increase linearly with the SAW frequency and power but, in contrast to conventional currents, they depend non-monotonously on the graphene electric conductivity. Most of these functionalities have been reported in graphene transferred to the surface of strong piezoelectric insulators. The recent observation of acousto-electric currents in epitaxial graphene on SiC opens the way to the large-scale fabrication of graphene-based acousto-electric devices patterned directly on a semi-insulating wafer. △ Less

Submitted 31 October, 2018; originally announced November 2018.

Journal ref: J. Phys. D: Appl. Phys. 51, 383001 (2018)

Tunneling blockade and single-photon emission in GaAs double quantum wells

Authors: M. Yuan, A. Hernández-Mínguez, K. Biermann, P. V. Santos

Abstract: We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged exciton… ▽ More We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged excitons (trions) blocks carrier tunneling across the barrier to form indirect excitons, thus opening a gap in their emission spectrum. This behavior is attributed to the low binding energy of the trions. Within the tunneling blockade regime, emission becomes dominated by processes involving excitons bound to single shallow impurities, which behave as two-level centers activated by resonant tunneling. The quantum nature of the emission is confirmed by the anti-bunched photon emission statistics. The narrow distribution of emission energies ($\sim 10$~meV) and the electrical connection to the QWs make these single-exciton centers interesting candidates for applications in single-photon sources. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Comments: 5 pages, 5 figures plus supplementary materials

Journal ref: Phys. Rev. B 98, 155311 (2018)

Asymmetric $g$ tensor in low-symmetry two-dimensional hole systems

Authors: C. Gradl, R. Winkler, M. Kempf, J. Holler, D. Schuh, D. Bougeard, A. Hernández-Mínguez, K. Biermann, P. V. Santos, C. Schüller, T. Korn

Abstract: The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performi… ▽ More The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performing time-resolved Kerr rotation measurements, we found a non-diagonal tensor $g$ that manifests itself in unusual precessional motion as well as distinct dependencies of hole spin dynamics on the direction of the magnetic field $\vec{B}$. We quantify the individual components of the tensor $g$ for [113]-, [111]- and [110]-grown samples. We complement the experiments by a comprehensive theoretical study of Zeeman splitting in in-plane and out-of-plane fields $\vec{B}$. To this end, we develop a detailed multiband theory for the tensor $g$. Using perturbation theory, we derive transparent analytical expressions for the components of the tensor $g$ that we complement with accurate numerical calculations based on our theoretical framework. We obtain very good agreement between experiment and theory. Our study demonstrates that the tensor $g$ is neither symmetric nor antisymmetric. Opposite off-diagonal components can differ in size by up to an order of magnitude. △ Less

Submitted 21 June, 2018; v1 submitted 25 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. X 8, 021068 (2018)

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

Authors: Yi-Ting Liou, Alberto Hernández-Mínguez, Jens Herfort, João Marcelo J. Lopes, Abbes Tahraoui, Paulo V. Santos

Abstract: We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer protects the EG during the sputtering of a piezoelectric ZnO film for the efficient generation of SAWs. We demonstrate by Raman and electric measurements that the coating does not harm the EG structural and electronic propert… ▽ More We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer protects the EG during the sputtering of a piezoelectric ZnO film for the efficient generation of SAWs. We demonstrate by Raman and electric measurements that the coating does not harm the EG structural and electronic properties. We report the generation of two SAW modes with frequencies around 2 GHz. For both modes, we measure acousto-electric currents in EG devices placed in the SAW propagation path. The currents increase linearly with the SAW power, reaching values up to almost two orders of magnitude higher than in previous reports for acousto-electric transport in EG on SiC. Our results agree with the predictions from the classical relaxation model of the interaction between SAWs and a two dimensional electron gas. △ Less

Submitted 22 May, 2018; v1 submitted 17 August, 2017; originally announced August 2017.

Journal ref: J. Phys. D: Appl. Phys. 50 (2017) 464008

Switching of Magnetic Moments of Nanoparticles by Surface Acoustic Waves

Authors: J. Tejada, E. M. Chudnovsky, R. Zarzuela, N. Statuto, J. Calvo-de la Rosa, P. V. Santos, A. Hernandez-Minguez

Abstract: We report evidence of the magnetization reversal in nanoparticles by surface acoustic waves (SAWs). The experimental system consists of isolated magnetite nanoparticles dispersed on a piezoelectric substrate. Magnetic relaxation from a saturated state becomes significantly enhanced in the presence of the SAW at a constant temperature of the substrate. The dependence of the relaxation on SAW power… ▽ More We report evidence of the magnetization reversal in nanoparticles by surface acoustic waves (SAWs). The experimental system consists of isolated magnetite nanoparticles dispersed on a piezoelectric substrate. Magnetic relaxation from a saturated state becomes significantly enhanced in the presence of the SAW at a constant temperature of the substrate. The dependence of the relaxation on SAW power and frequency has been investigated. The effect is explained by the effective ac magnetic field generated by the SAW in the nanoparticles. △ Less

Submitted 30 June, 2017; originally announced July 2017.

Comments: Accepted in Europhysics Letters

The random field Blume-Capel model revisited

Authors: P. V. Santos, F. A. da Costa, J. M. de Araújo

Abstract: We have revisited the mean-field treatment for the Blume-Capel model under the presence of a discrete random magnetic field as introduced by Kaufman and Kanner. The magnetic field ($H$) versus temperature ($T$) phase diagrams for given values of the crystal field $D$ were recovered in accordance to Kaufman and Kanner original work. However, our main goal in the present work was to investigate the… ▽ More We have revisited the mean-field treatment for the Blume-Capel model under the presence of a discrete random magnetic field as introduced by Kaufman and Kanner. The magnetic field ($H$) versus temperature ($T$) phase diagrams for given values of the crystal field $D$ were recovered in accordance to Kaufman and Kanner original work. However, our main goal in the present work was to investigate the distinct structures of the crystal field versus temperature phase diagrams as the random magnetic field is varied because similar models have presented reentrant phenomenon due to randomness. Following previous works we have classified the distinct phase diagrams according to five different topologies. The topological structure of the phase diagrams is maintained for both $H-T$ and $D-T$ cases. Althoug the phase diagrams exhibit a richness of multicritical phenomena we did not found any reentrant effect as have been seen in similar models. △ Less

Submitted 1 January, 2018; v1 submitted 23 May, 2017; originally announced May 2017.

Comments: 21 pages, 5 figures

MSC Class: 82B26; 82B44; 82B80

Journal ref: https://doi.org/10.1016/j.jmmm.2017.12.008

Optical phonon modulation in semiconductors by surface acoustic waves

Authors: F. Iikawa, A. Hernández-Mínguez, M. Ramsteiner, P. V. Santos

Abstract: We investigate the modulation of optical phonons in semiconductor crystal by surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10\textsuperscript{-3} in the average Raman scattering intensity by optical phonons in Si and GaN crystals. The SAW-induced modifications in the Raman cross-section are dominated by the modulation of the optical p… ▽ More We investigate the modulation of optical phonons in semiconductor crystal by surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10\textsuperscript{-3} in the average Raman scattering intensity by optical phonons in Si and GaN crystals. The SAW-induced modifications in the Raman cross-section are dominated by the modulation of the optical phonon energy by the SAW strain field. In addition to this local contribution, the experiments give evidence for a weaker and non-local contribution arising from the spatial variation of the SAW strain field. The latter is attributed to the activation of optical modes with large wave vectors and, therefore, lower energies. The experimental results, which are well described by theoretical models for the two contributions, prove that optical phonons can be manipulated by SAWs with $μ$m wavelengths △ Less

Submitted 8 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 195212 (2016)

Vertically-coupled dipolar exciton molecules

Authors: Kobi Cohen, Maxim Khodas, Boris Laikhtman, Paulo V. Santos, Ronen Rapaport

Abstract: While the interaction potential between two dipoles residing in a single plane is repulsive, in a system of two vertically adjacent layers of dipoles it changes from repulsive interaction in the long range to attractive interaction in the short range. Here we show that for dipolar excitons in semiconductor heterostructures, such a potential may give rise to bound states if two such excitons are ex… ▽ More While the interaction potential between two dipoles residing in a single plane is repulsive, in a system of two vertically adjacent layers of dipoles it changes from repulsive interaction in the long range to attractive interaction in the short range. Here we show that for dipolar excitons in semiconductor heterostructures, such a potential may give rise to bound states if two such excitons are excited in two separate layers, leading to the formation of vertically coupled dipolar exciton molecules. Our calculations prove the existence of such bound states and predict their binding energy as a function of the layers separation as well as their thermal distributions. We show that these molecules should be observed in realistic systems such as semiconductor coupled quantum well structures and the more recent van-der-Waals bound heterostructures. Formation of such molecules can lead to new effects such as a collective dipolar drag between layers and new forms of multi-particle correlations, as well as to the study of dipolar molecular dynamics in a controlled system. △ Less

Submitted 26 April, 2016; v1 submitted 2 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. B 93, 235310 (2016)

Mean-field solution of the Blume-Capel model under a random crystal field

Authors: Priscila V. dos Santos, Francisco A. da Costa, João M. de Araújo

Abstract: In this work we investigate the Blume-Capel model with infinite-range ferromagnetic interactions and under the influence of a quenched disorder - a random crystal field. For a suitable choice of the random crystal field the model displays a wealth of multicritical behavior, continuous and first-order transition lines, as well as re-entrant behavior. The resulting phase diagrams show a variety of t… ▽ More In this work we investigate the Blume-Capel model with infinite-range ferromagnetic interactions and under the influence of a quenched disorder - a random crystal field. For a suitable choice of the random crystal field the model displays a wealth of multicritical behavior, continuous and first-order transition lines, as well as re-entrant behavior. The resulting phase diagrams show a variety of topologies as a function of the disorder parameter $\textit{p}$. A comparison with recent results on the Blume-Capel model in random crystal field is discussed. △ Less

Submitted 2 February, 2015; v1 submitted 30 January, 2015; originally announced January 2015.

Comments: This paper has been withdrawn by the author due to it is about a new version of arXiv:1412.0606, which will be replaced immediately

Mean field solution of the Blume-Capel model under a random crystal field

Authors: P. V. Santos, F. A. Costa, J. M. Araújo

Abstract: In this work we investigate the Blume-Capel model with infinite-range ferromagnetic interactions and under the influence of a quenched disorder - a random crystal field. For a suitable choice of the random crystal field the model displays a wealth of multicritical behavior, continuous and first-order transition lines, as well as re-entrant behavior. The resulting phase diagrams show a variety of… ▽ More In this work we investigate the Blume-Capel model with infinite-range ferromagnetic interactions and under the influence of a quenched disorder - a random crystal field. For a suitable choice of the random crystal field the model displays a wealth of multicritical behavior, continuous and first-order transition lines, as well as re-entrant behavior. The resulting phase diagrams show a variety of topologies as a function of the disorder parameter $\textit{p}$. A comparison with recent results on the Blume-Capel model in random crystal field is discussed. △ Less

Submitted 3 February, 2015; v1 submitted 1 December, 2014; originally announced December 2014.

Comments: 16 pages, 3 figures

MSC Class: 82B26; 82B44; 82B80

Coherent transport and manipulation of spins in indirect exciton nanostructures

Authors: Adriano Violante, Rudolf Hey, Paulo Ventura Santos

Abstract: We report on the coherent control and transport of indirect exciton (IX) spins in GaAs double quantum well (DQW) nanostructures. The spin dynamics was investigated by optically generating spins using a focused, circularly polarized light spot and by probing their spatial distribution using spatially and polarization resolved photoluminescence spectroscopy. Optically injected exciton spins precess… ▽ More We report on the coherent control and transport of indirect exciton (IX) spins in GaAs double quantum well (DQW) nanostructures. The spin dynamics was investigated by optically generating spins using a focused, circularly polarized light spot and by probing their spatial distribution using spatially and polarization resolved photoluminescence spectroscopy. Optically injected exciton spins precess while diffusing over distances exceeding 20 μm from the excitation spot with a spatial precession frequency that depends on the spin transport direction as well as on the bias applied across the DQW structure. This behavior is attributed to the spin precession in the effective magnetic field induced by the spin-orbit interaction. From the dependence of the spin dynamics on the transport direction, bias and external magnetic fields we directly determined the Dresselhaus and Rashba spin splitting coefficients for the structure. The precession dynamics is essentially independent on the IX density, thus indicating that the long spin lifetimes are not associated with IX collective effects. The latter, together with the negligible contribution of holes to the spin dynamics, are rather attributed to spatial separation of the electron and hole wave functions by the electric field, which reduces the electron-hole exchange interaction. Coherent spin precession over long transport distances as well as the control of the spin vector using electric and magnetic fields open the way for the application of IX spins in the quantum information processing. △ Less

Submitted 20 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. B 91, 125302 (2015)

Spatial patterns of dissipative polariton solitons in semiconductor microcavities

Authors: J. K. Chana, M. Sich, F. Fras, A. V. Gorbach, D. V. Skryabin, E. Cancellieri, E. A. Cerda-Méndez, K. Biermann, R. Hey, P. V. Santos, M. S. Skolnick, D. N. Krizhanovskii

Abstract: Semiconductor microcavities operating in the polaritonic regime are highly non-linear, high speed systems due to the unique half-light, half-matter nature of polaritons. Here, we report for the first time the observation of propagating multi-soliton polariton patterns consisting of multi-peak structures either along (x) or perpendicular to (y) the direction of propagation. Soliton arrays of up to… ▽ More Semiconductor microcavities operating in the polaritonic regime are highly non-linear, high speed systems due to the unique half-light, half-matter nature of polaritons. Here, we report for the first time the observation of propagating multi-soliton polariton patterns consisting of multi-peak structures either along (x) or perpendicular to (y) the direction of propagation. Soliton arrays of up to 5 solitons are observed, with the number of solitons controlled by the size or power of the triggering laser pulse. The break-up along the x direction occurs due to interplay of bistability, negative effective mass and polariton-polariton scattering, while in the y direction the break-up results from nonlinear phase-dependent interactions of propagating fronts. We show the experimental results are in good agreement with numerical modelling. Our observations are a step towards ultrafast all-optical signal processing using sequences of solitons as bits of information. △ Less

Submitted 29 July, 2014; originally announced July 2014.

Journal ref: Physical Review Letters 115 (25), 256401 (2015)

Dynamics of indirect exciton transport by moving acoustic fields

Authors: Adriano Violante, Kobi Cohen, Snežana Lazić, Rudolph Hey, Ronen Rapaport, Paulo Ventura Santos

Abstract: We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the electrostatic field in the quantum wells confining the IX, leading to changes in their energy. In addition, this potential capture and transports IXs over seve… ▽ More We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the electrostatic field in the quantum wells confining the IX, leading to changes in their energy. In addition, this potential capture and transports IXs over several hundreds of μm. While the IX packets keep to a great extent their spatial shape during transport by the moving potential, the effective transport velocity is lower than the SAW group velocity and increases with the SAW amplitude. This behavior is attributed to the capture of IXs by traps along the transport path, thereby increasing the IX transit time. The experimental results are well-reproduced by an analytical model for the interaction between trapping centers and IXs during transport. △ Less

Submitted 25 October, 2013; originally announced October 2013.

Scalable interconnections for remote exciton systems

Authors: Snežana Lazić, Adriano Violante, Kobi Cohen, Rudolph Hey, Ronen Rapaport, Paulo Ventura Santos

Abstract: Excitons, quasi-particles consisting of electron-hole pairs bound by the Coulomb interaction, are a potential medium for processing of photonic information in the solid-state. Information processing via excitons requires efficient techniques for the transport and manipulation of these uncharged particles. We introduce here a novel concept for the interconnection of multiple remote exciton systems… ▽ More Excitons, quasi-particles consisting of electron-hole pairs bound by the Coulomb interaction, are a potential medium for processing of photonic information in the solid-state. Information processing via excitons requires efficient techniques for the transport and manipulation of these uncharged particles. We introduce here a novel concept for the interconnection of multiple remote exciton systems based on the long-range transport of dipolar excitons by a network of configurable interconnects driven by acoustic wave beams. By combining this network with electrostatic gates, we demonstrate an integrated exciton multiplexer capable of interconnecting, gating and routing exciton systems separated by millimeter distances. The multiplexer provides a scalable platform for the manipulation of exciton fluids with potential applications in information processing. △ Less

Submitted 25 October, 2013; originally announced October 2013.