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Tin Titanate: the hunt for a new ferroelectric perovskite
Authors:
J. Gardner,
Atul Thakre,
Ashok Kumar,
J. F. Scott
Abstract:
We review all the published literature and show that there is no experimental evidence for homogeneous tin titanate SnTiO3 in bulk or thin-film form. Instead a combination of unrelated artefacts are easily misinterpreted. The X-ray Bragg data are contaminated by double scattering from the Si substrate, giving a strong line at the 2-theta angle exactly where perovskite SnTiO3 should appear. The str…
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We review all the published literature and show that there is no experimental evidence for homogeneous tin titanate SnTiO3 in bulk or thin-film form. Instead a combination of unrelated artefacts are easily misinterpreted. The X-ray Bragg data are contaminated by double scattering from the Si substrate, giving a strong line at the 2-theta angle exactly where perovskite SnTiO3 should appear. The strong dielectric divergence near 560K is irreversible and arises from oxygen site detrapping, accompanied by Warburg/Randles interfacial anomalies. The small (4 uC/cm2) apparent ferroelectric hysteresis remains in samples shown in pure (Sn,Ti)O2 rutile/cassiterite, in which ferroelectricity is forbidden. Only very recent German work reveals real bulk SnTiO3, but this is completely inhomogeneous, consisting of an elaborate array of stacking faults, not suitable for ferroelectric devices. Unpublished TEM data reveal an inhomogeneous SnO layered structured thin films, related to shell-core structures. The harsh conclusion is that there is a combination of unrelated artefacts masquerading as ferroelectricity in powders and ALD films; and only a trace of a second phase in Cambridge PLD data suggests any perovskite content at all. The fact that X-ray, dielectric, and hysteresis data all lead to the wrong conclusion is instructive and reminds us of earlier work on copper calcium titanate (a well-known boundary-layer capacitor).
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Submitted 28 August, 2019; v1 submitted 7 June, 2019;
originally announced June 2019.
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Electrical Studies of Barkhausen Switching Noise in Ferroelectric lead zirconate titanate (PZT) and BaTiO3: Critical Exponents and Temperature-dependence
Authors:
C. Flannigan,
C. D. Tan,
J. F. Scott
Abstract:
Previous studies of Barkhausen noise in PZT have been limited to the energy spectrum (slew rate response voltages versus time), showing agreement with avalanche models; in barium titanate other exponents have been measured acoustically, but only at ambient temperatures. In the present study we report the Omori exponent (-0.95$\pm$0.03) for aftershocks in PZT and extend the barium titanate studies…
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Previous studies of Barkhausen noise in PZT have been limited to the energy spectrum (slew rate response voltages versus time), showing agreement with avalanche models; in barium titanate other exponents have been measured acoustically, but only at ambient temperatures. In the present study we report the Omori exponent (-0.95$\pm$0.03) for aftershocks in PZT and extend the barium titanate studies to a wider range of temperature.
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Submitted 31 May, 2019;
originally announced June 2019.
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Plasmon Soft Mode in an Organic-Inorganic Hybrid Perovskite
Authors:
Jiyu Tian,
Karuna Kara Mishra,
Eli Zysman-Colman,
Finlay D. Morrison,
Ram S. Katiyar,
James F. Scott
Abstract:
We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon fre…
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We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon frequency and linewidth agree with independent measurements, and the impedance analysis reveals a frequency dependence (modelled by a constant phase element, CPE) that can be identified as due to electron-phonon coupling. The dependence of plasmon frequency upon (TC-T) is analogous to that for magnons in magnetic insulators or soft transverse optical phonons in ferroelectrics and ferroelastics, or for phasons in incommensurately modulated insulators.
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Submitted 16 April, 2019;
originally announced April 2019.
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Studies of Barkhausen Pulses in Ferroelectrics
Authors:
C. D. Tan,
J. Gardner,
F. D. Morrison,
E. K. H. Salje,
J. F. Scott
Abstract:
Systems that produce crackling noises such as Barkhausen pulses are statistically similar and can be compared with one another. In this project, the Barkhausen noise of three ferroelectric lead zirconate titanate (PZT) samples were demonstrated to be compatible with avalanche statistics. The peaks of the slew-rate (time derivative of current $dI/dt$) squared, defined as jerks, were statistically a…
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Systems that produce crackling noises such as Barkhausen pulses are statistically similar and can be compared with one another. In this project, the Barkhausen noise of three ferroelectric lead zirconate titanate (PZT) samples were demonstrated to be compatible with avalanche statistics. The peaks of the slew-rate (time derivative of current $dI/dt$) squared, defined as jerks, were statistically analysed and shown to obey power-laws. The critical exponents obtained for three PZT samples (B, F and S) were 1.73, 1.64 and 1.61, respectively, with a standard deviation of 0.04. This power-law behaviour is in excellent agreement with recent theoretical predictions of 1.65 in avalanche theory. If these critical exponents do resemble energy exponents, they were above the energy exponent 1.33 derived from mean-field theory. Based on the power-law distribution of the jerks, we demonstrate that domain switching display self-organised criticality and that Barkhausen jumps measured as electrical noise follows avalanche theory.
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Submitted 7 June, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Quantum Critical Points in Ferroelectric Relaxors: Stuffed Tungsten Bronze K3Li2Ta5O15 and Lead Pyrochlore (Pb2Nb2O7)
Authors:
Rebecca M. Smith,
Jonathan Gardner,
Finlay D. Morrison,
Stephen E. Rowley,
Catarina Ferraz,
M. A. Carpenter,
Jiasheng Chen,
Jack Hodkinson,
Siân E. Dutton,
J. F. Scott
Abstract:
We have synthesised ceramic specimens of the tetragonal tungsten bronze K3Li2Ta5O15 (KLT) and characterized its phase transition via X-ray, dielectric permittivity, ultrasonic spectroscopy and heat capacity measurements. The space group of KLT is reported as both P4/mbm or Cmmm with the orthorhombic distortion occurring when there are higher partial pressures of volatile K and Li used within the c…
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We have synthesised ceramic specimens of the tetragonal tungsten bronze K3Li2Ta5O15 (KLT) and characterized its phase transition via X-ray, dielectric permittivity, ultrasonic spectroscopy and heat capacity measurements. The space group of KLT is reported as both P4/mbm or Cmmm with the orthorhombic distortion occurring when there are higher partial pressures of volatile K and Li used within the closed crucibles for the solid state synthesis. The data show strong relaxor behaviour, with the temperature at which the two dielectric relative permittivity peaks decreasing with 104 K $\geqslant$ Tm1 $\geqslant$ 69 K and 69 K $\geqslant$ Tm2 $\geqslant$ 46 K as probe frequency f is reduced from 1 MHz to 316 Hz. The data satisfy a Vogel-Fulcher model with an extrapolated freezing temperature for ε' and ε" of Tf1 = + 15.8 and - 11.8 K and Tf2 = - 5.0 and - 15.0 K for f $\rightarrow$ 0 (tending to dc). Therefore by tuning frequency, the transition could be shifted to absolute zero suggesting KLT has a relaxor-type quantum critical point. In addition, we have reanalysed the conflicting literature for Pb2Nb2O7 pyrochlore which suggests that this is also a relaxor-type quantum critical point as the freezing temperature from Vogel-Fulcher fitting is below absolute zero. Since the transition temperature evidenced in the dielectric data at ca. 100 kHz shifts below zero Kelvin for very low frequencies, heat capacity data collected in the zero-frequency (dc) limit, should not indicate a transition. Both of these materials show promise as possible new relaxor-type quantum critical points within non-perovskite based structures as multiple compounds are reported with low-temperature transitions.
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Submitted 27 February, 2018;
originally announced February 2018.
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Origin of Ferroelectricity in Orthorhombic LuFeO$_3$
Authors:
Ujjal Chowdhury,
Sudipta Goswami,
Amritendu Roy,
S. S. Rajput,
A. K. Mall,
R. Gupta,
S. D. Kaushik,
V. Siruguri,
S. Saravanakumar,
S. Israel,
R. Saravanan,
A. Senyshyn,
T. Chatterji,
J. F. Scott,
A. Garg,
Dipten Bhattacharya
Abstract:
We demonstrate that small but finite ferroelectric polarization ($\sim$0.01 $μ$C/cm$^2$) emerges in orthorhombic LuFeO$_3$ ($Pnma$) at $T_N$ ($\sim$600 K) because of commensurate (k = 0) and collinear magnetic structure. The synchrotron x-ray and neutron diffraction data suggest that the polarization could originate from enhanced bond covalency together with subtle contribution from lattice. The t…
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We demonstrate that small but finite ferroelectric polarization ($\sim$0.01 $μ$C/cm$^2$) emerges in orthorhombic LuFeO$_3$ ($Pnma$) at $T_N$ ($\sim$600 K) because of commensurate (k = 0) and collinear magnetic structure. The synchrotron x-ray and neutron diffraction data suggest that the polarization could originate from enhanced bond covalency together with subtle contribution from lattice. The theoretical calculations indicate enhancement of bond covalency as well as the possibility of structural transition to the polar $Pna2_1$ phase below $T_N$. The $Pna2_1$ phase, in fact, is found to be energetically favorable below $T_N$ in orthorhombic LuFeO$_3$ ($albeit$ with very small energy difference) than in isostructural and nonferroelectric LaFeO$_3$ or NdFeO$_3$. Application of electric field induces finite piezostriction in LuFeO$_3$ via electrostriction resulting in clear domain contrast images in piezoresponse force microscopy.
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Submitted 6 September, 2019; v1 submitted 6 October, 2017;
originally announced October 2017.
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Quantum percolation phase transition and magneto-electric dipole glass in hexagonal ferrites
Authors:
S. E. Rowley,
T. Vojta,
A. T. Jones,
W. Guo,
J. Oliveira,
F. D. Morrison,
N. Lindfield,
E. Baggio Saitovitch,
B. E. Watts,
J. F. Scott
Abstract:
Hexagonal ferrites do not only have enormous commercial impact (£2 billion/year in sales) due to applications that include ultra-high density memories, credit card stripes, magnetic bar codes, small motors and low-loss microwave devices, they also have fascinating magnetic and ferroelectric quantum properties at low temperatures. Here we report the results of tuning the magnetic ordering temperatu…
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Hexagonal ferrites do not only have enormous commercial impact (£2 billion/year in sales) due to applications that include ultra-high density memories, credit card stripes, magnetic bar codes, small motors and low-loss microwave devices, they also have fascinating magnetic and ferroelectric quantum properties at low temperatures. Here we report the results of tuning the magnetic ordering temperature in PbFe$_{12-x}$Ga$_x$O$_{19}$ to zero by chemical substitution $x$. The phase transition boundary is found to vary as $T_N \sim (1-x/x_c)^{2/3}$ with $x_c$ very close to the calculated spin percolation threshold which we determine by Monte Carlo simulations, indicating that the zero-temperature phase transition is geometrically driven. We find that this produces a form of compositionally-tuned, insulating, ferrimagnetic quantum criticality. Close to the zero temperature phase transition we observe the emergence of an electric-dipole glass induced by magneto-electric coupling. The strong frequency behaviour of the glass freezing temperature $T_m$ has a Vogel-Fulcher dependence with $T_m$ finite, or suppressed below zero in the zero frequency limit, depending on composition $x$. These quantum-mechanical properties, along with the multiplicity of low-lying modes near to the zero-temperature phase transition, are likely to greatly extend applications of hexaferrites into the realm of quantum and cryogenic technologies.
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Submitted 13 August, 2017;
originally announced August 2017.
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Optically Controlled Polarization in Highly Oriented Ferroelectric Thin Films
Authors:
Hitesh Borkar,
M Tomar,
Vinay Gupta,
Ram S. Katiyar,
J. F. Scott,
Ashok Kumar
Abstract:
The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illuminati…
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The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illumination of light. We have employed two configurations for polarization characterization; first deals with out of plane polarization with single capacitor under investigation, whereas second demonstrates the two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under illumination of light that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up & negative-down (PUND) measurements which confirm robust polarization and their switching under illumination.
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Submitted 29 June, 2017;
originally announced June 2017.
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Giant Enhancement in Ferroelectric Polarization under Illumination
Authors:
Hitesh Borkar,
Vaibhav Rao,
M Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Unde…
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We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Under illumination of white light and weak 405-nm near-ultraviolet laser light (30 mW), an unexpectedly large (200-300%) change in polarization and displacement current was observed. Light also changes the dc conduction current density by one to two orders of magnitude with a large switchable open circuit voltage (Voc ~ 2 V) and short circuit current (Jsc ~ 5x10-8 A). The samples show a photo-current ON/OFF ratio of order 6:1 under illumination of weak light.
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Submitted 25 June, 2017;
originally announced June 2017.
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PbTi1-xPdxO3: A New Room-temperature Magnetoelectric Multiferroic Device Material
Authors:
Elzbieta Gradauskaite,
Jonathan Gardner,
Rebecca M. Smith,
Finlay D. Morrison,
Stephen L. Lee,
Ram S. Katiyar,
James F. Scott
Abstract:
There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gall…
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There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFeO3). In the present work we report a comprehensive study of the perovskite PbTi1-xPdxO3 with 0 < x < 0.3. Our study includes dielectric, impedance and magnetization measurements, conductivity analysis and study of crystallographic phases present in the samples with special attention paid to minor phases, identified as PdO, PbPdO2, and Pd3Pb. The work is remarkable in two ways: Pd is difficult to substitute into ABO3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields). The new material, as a PZT derivative, is expected to have much stronger piezoelectric properties than BiFeO3.
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Submitted 7 June, 2017;
originally announced June 2017.
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Prospects and Applications Near Ferroelectric Quantum Phase Transitions
Authors:
P. Chandra,
G. G. Lonzarich,
S. E. Rowley,
J. F. Scott
Abstract:
The emergence of complex and fascinating states of quantum matter in the neighborhood of zero temperature phase transitions suggests that such quantum phenomena should be studied in a variety of settings. Advanced technologies of the future may be fabricated from materials where the cooperative behavior of charge, spin and current can be manipulated at cryogenic temperatures. The propagating latti…
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The emergence of complex and fascinating states of quantum matter in the neighborhood of zero temperature phase transitions suggests that such quantum phenomena should be studied in a variety of settings. Advanced technologies of the future may be fabricated from materials where the cooperative behavior of charge, spin and current can be manipulated at cryogenic temperatures. The propagating lattice dynamics of displacive ferroelectrics make them appealing for the study of quantum critical phenomena that is characterized by both space- and time-dependent quantities. In this Key Issues article we aim to provide a self-contained overview of ferroelectrics near quantum phase transitions. Unlike most magnetic cases, the ferroelectric quantum critical point can be tuned experimentally to reside at, above or below its upper critical dimension; this feature allows for detailed interplay between experiment and theory using both scaling and self-consistent field models. Empirically, the sensitivity of the ferroelectrics $T_c$s to external to chemical pressure gives practical access to a broad range of temperature behavior over several hundreds of Kelvin. Additional degrees of freedom like charge and spin can be added and characterized systematically. Satellite memories, electrocaloric cooling and low-loss phased-array radar are among possible applications of low-temperature ferroelectrics. We end with open questions for future research that include textured polarization states and unusual forms of superconductivity that remain to be understood theoretically.
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Submitted 10 November, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures
Authors:
Radhe Agarwal,
Yogesh Sharma,
Siliang Chang,
Krishna Pitike,
Changhee Sohn,
Serge M. Nakhmanson,
Christos G. Takoudis,
Ho Nyung Lee,
James F. Scott,
Ram S. Katiyar,
Seungbum Hong
Abstract:
We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling m…
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We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications.
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Submitted 15 February, 2017;
originally announced February 2017.
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Towards Resolving Landauer's Paradox Through Direct Observation of Multiscale Ferroelastic-Ferroelectric Interplay
Authors:
Colm Durkan,
Asaf Hershkovitz,
DaPing Chu,
James F. Scott,
Yachin Ivry
Abstract:
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic domains switch, i.e. how the polarization changes from one state to another, is yet to be answered fully. There are contradicting models and a wide body of accum…
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Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic domains switch, i.e. how the polarization changes from one state to another, is yet to be answered fully. There are contradicting models and a wide body of accumulated data which disagree as to whether the switching requires domain nucleation. Moreover, ferroelectric domains switch under electric fields that are supposedly too weak to form nucleation sites, indicating that the level of disorder seen in real systems plays an important role. This longstanding so-called Landauer's paradox is the ferroelectric equivalent to the absence of raindrop formation in a dust-free vacuum, leading to supersaturated vapors that cannot exist otherwise, e.g. in spinodal decompositions or inhomogeneous nucleation environments. Here we show that polarization switching in ferroelectric-ferroelastic systems comprises domain types that differ by symmetry, lengthscale and switching energy. These domains switch simultaneously thanks to intermediate-range order of organized pinning sites, supporting the previously-unexplained coexistence of nucleation-and-growth and nucleation-frustrated mechanisms. Our treatment is applicable to other Kolmogorov-Avrami systems with multi-scale phase transitions. Finally, we demonstrate augmented electromechanical coupling based on the collective motion of pinning sites, which is promising for nano electro-mechanical and low-power switching devices.
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Submitted 12 August, 2016;
originally announced August 2016.
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Ferrielectricity in an Organic Ferroelectric
Authors:
James F. Scott,
Finlay D. Morrison,
Rebecca Clulow,
Philip Lightfoot,
Aurora Gherson,
Sylvia C. Capelli,
Michael R. Probert,
S. Sahoo,
James S. Young,
Ram S. Katiyar
Abstract:
We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130…
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We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130 K that can be lowered to a Quantum Critical Point at zero Kelvin via Br- or I-substitution, and phases predicted to be antiferroelectric at high pressure and low temperatures. Unusually, the size of the primitive unit cell does not increase. We measure hysteresis loops and polarization below T = 64 K and clear Raman evidence for this transition, as well of another transition near 47-50 K. X-ray and neutron studies below Tc = 130K show there is an antiferroelectric displacement out of plane of two sarcosine groups; but these are antiparallel displacements are of different magnitude, leading to a bias voltage that grows with decreasing T. A monoclinic subgroup C2 may be possible at the lowest temperatures (T<64K or T<48K), but no direct evidence exists for a crystal class lower than orthorhombic.
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Submitted 18 June, 2016;
originally announced June 2016.
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Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices
Authors:
James F. Scott,
Donald M. Evans,
J. Marty Gregg,
Alexei Gruverman
Abstract:
We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-…
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We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic.
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Submitted 11 June, 2016;
originally announced June 2016.
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Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics
Authors:
Shalini Kumari,
Dhiren K. Pradhan,
Nora Ortega,
Kallol Pradhan,
Christopher DeVreugd,
Gopalan Srinivasan,
Ashok Kumar,
J. F. Scott,
Ram S. Katiyar
Abstract:
During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupa…
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During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities.
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Submitted 24 March, 2016;
originally announced March 2016.
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Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3
Authors:
Hitesh Borkar,
Vaibhav Rao,
Soma Dutta,
Arun Barvat,
Prabir Pal,
M Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld ana…
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We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2) which is confirmed by the high resolution transmission electron diffraction pattern. Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulture relation. It shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d33 ~ 233 pm/V) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (Tm). The underlying physics for light-sensitive dielectric dispersion was probed by X-ray photon spectroscopy (XPS) which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, are responsible for most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4+ states and sit at the centers of the TiO6 octahedra, which along with asymmetric hybridization between O 2p and Bi 6s orbitals appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.
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Submitted 31 January, 2016;
originally announced February 2016.
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Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films
Authors:
Seungwoo Song,
Hyun Myung Jang,
Nam-Suk Lee,
Jong Y. Son,
Rajeev Gupta,
Ashish Garg,
Jirawit Ratanapreechachai,
James F. Scott
Abstract:
Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. Th…
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Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 μC/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 μC/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.
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Submitted 19 October, 2015;
originally announced October 2015.
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Folding Catastrophes due to Viscosity in Multiferroic Domains: Implications for Room-Temperature Multiferroic Switching
Authors:
J. F. Scott
Abstract:
Unusual domains with curved walls and failure to satisfy the Landau-Lifshitz-Kittel Law are modeled as folding catastrophes (saddle-node bifurcations). This description of ballistic motion in a viscous medium is based upon early work by Dawber et al., Appl. Phys. Lett. 82, 436 (2003). It suggests that ferroelectric films can exhibit folds or vortex patterns but not both.
Unusual domains with curved walls and failure to satisfy the Landau-Lifshitz-Kittel Law are modeled as folding catastrophes (saddle-node bifurcations). This description of ballistic motion in a viscous medium is based upon early work by Dawber et al., Appl. Phys. Lett. 82, 436 (2003). It suggests that ferroelectric films can exhibit folds or vortex patterns but not both.
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Submitted 7 October, 2015;
originally announced October 2015.
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Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics
Authors:
Hitesh Borkar,
M. Tomar,
Vinay Gupta,
J. F. Scott,
Ashok Kumar
Abstract:
We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displa…
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We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in upoled samples. E-poling changes bananas type polarization loops to real ferroelectric loops.
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Submitted 13 September, 2015;
originally announced September 2015.
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Quantum Critical Point study in Multiferroic Hexaferrites: BaFe12O19, SrFe12O19, and PbFe3Ga9O19 -- Verification of the Khmelnitskii Theory
Authors:
S. E. Rowley,
Yi-sheng Chai,
Shi-peng Shen,
Young Sun,
A. T. Jones,
B. E. Watts,
J. F. Scott
Abstract:
BaFe12O19 is a popular M-type hexaferrite with T(Neel) = 720 K of enormous commercial value (3 billion dollars/year). It exhibits an incipient ferroelectric phase transition (in violation of the Spaldin-Hill rule) extrapolated to lie at 6.0 K Kelvin but suppressed due to quantum fluctuations (as in SrTiO3). The QCP theory of Khmelnitskii for such uniaxial ferroelectrics predicts that the inverse i…
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BaFe12O19 is a popular M-type hexaferrite with T(Neel) = 720 K of enormous commercial value (3 billion dollars/year). It exhibits an incipient ferroelectric phase transition (in violation of the Spaldin-Hill rule) extrapolated to lie at 6.0 K Kelvin but suppressed due to quantum fluctuations (as in SrTiO3). The QCP theory of Khmelnitskii for such uniaxial ferroelectrics predicts that the inverse isothermal electric susceptibility varies as T cubed, in contrast to that for pseudo-cubic materials such as SrTiO3 or KTaO3, a hypothesis we verify.
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Submitted 13 August, 2015; v1 submitted 7 July, 2015;
originally announced July 2015.
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Quantum electric-dipole liquid on a triangular lattice
Authors:
Shi-Peng Shen,
Jia-Chuan Wu,
Jun-Da Song,
Xue-Feng Sun,
Yi-Feng Yang,
Yi-Sheng Chai,
Da-Shan Shang,
Shou-Guo Wang,
James F. Scott,
Young Sun
Abstract:
Geometric frustrations and quantum mechanical fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets that represents an exotic phase of matter and is attracting enormous interests. Geometric frustrations and quantum fluctuations can happ…
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Geometric frustrations and quantum mechanical fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets that represents an exotic phase of matter and is attracting enormous interests. Geometric frustrations and quantum fluctuations can happen beyond magnetic systems. Here we propose that quantum electric-dipole liquids, analogs to quantum spin liquids, could emerge in frustrated dielectrics where antiferroelectrically coupled small electric dipoles reside on a triangular lattice. The quantum paraelectric hexaferrite BaFe12O19, in which small electric dipoles originated from the off-center displacement of Fe3+ in the FeO5 bipyramids constitute a two-dimensional triangular lattice, represents a promising candidate to generate the anticipated electric-dipole liquid. We present a series of experimental evidences, including dielectric permittivity, heat capacity, and thermal conductivity measured down to 66 mK, to reveal the existence of a nontrivial ground state in BaFe12O19, characterized by itinerant low-energy excitations with a small gap, to which we interpret as an exotic liquid-like quantum phase. The quantum electric-dipole liquids in frustrated dielectrics open up a fresh playground for fundamental physics and may find applications in quantum information and computation as well.
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Submitted 15 October, 2015; v1 submitted 6 July, 2015;
originally announced July 2015.
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Electron-Beam Driven Relaxation Oscillations in Ferroelectric Nanodisks
Authors:
Nathaniel Ng,
Rajeev Ahluwalia,
Ashok Kumar,
David J. Srolovitz,
Premala Chandra,
James F. Scott
Abstract:
Using a combination of computational simulations, atomic-scale resolution imaging and phenomenological modelling, we examine the underlying mechanism for nanodomain restructuring in lead zirconate titanate (PZT) nanodisks driven by electron beams. The observed subhertz nanodomain dynamics are identified with relaxation oscillations where the charging/discharging cycle time is determined by saturat…
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Using a combination of computational simulations, atomic-scale resolution imaging and phenomenological modelling, we examine the underlying mechanism for nanodomain restructuring in lead zirconate titanate (PZT) nanodisks driven by electron beams. The observed subhertz nanodomain dynamics are identified with relaxation oscillations where the charging/discharging cycle time is determined by saturation of charge traps and nanodomain wall creep. These results are unusual in that they indicate very slow athermal dynamics in nanoscale systems.
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Submitted 9 May, 2015;
originally announced May 2015.
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Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions
Authors:
Ashok Kumar,
D. Barrionuevo,
N Ortega,
A. K. Shukla,
Santiranjan Shannigrahi,
J. F. Scott,
Ram S. Katiyar
Abstract:
Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared…
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Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping.
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Submitted 27 March, 2015;
originally announced March 2015.
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Quantum criticality in a uniaxial organic ferroelectric
Authors:
S. E. Rowley,
M. Hadjimichael,
M. N. Ali,
Y. C. Durmaz,
J. C. Lashley,
R. J. Cava,
J. F. Scott
Abstract:
Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and…
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Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and for an organic ferroelectric - and was found to persist up to temperatures of at least 30K to 40K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as $1/T^3$ close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as $1/T^2$ as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipoles in the TSCC family of crystals. Interestingly we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.
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Submitted 10 October, 2014;
originally announced October 2014.
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Faceting Oscillations in Nano-Ferroelectrics
Authors:
J. F. Scott,
Ashok Kumar
Abstract:
We observe periodic faceting of 8-nm diameter ferroelectric disks on a 10 s time-scale when thin Pb(Zr0.52Ti0.48)O3 (PZT) film is exposed to constant high-resolution transmission electron microscopy (HRTEM) beams. The oscillation is between circular disk geometry and sharply faceted hexagons. The behavior is analogous to that of spin structure and magnetic domain wall velocity oscillations in perm…
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We observe periodic faceting of 8-nm diameter ferroelectric disks on a 10 s time-scale when thin Pb(Zr0.52Ti0.48)O3 (PZT) film is exposed to constant high-resolution transmission electron microscopy (HRTEM) beams. The oscillation is between circular disk geometry and sharply faceted hexagons. The behavior is analogous to that of spin structure and magnetic domain wall velocity oscillations in permalloy [A. Bisig et al., Nature Commun. 4, 2328 (2013)], involving overshoot and de-pinning from defects [C. P. Amann, et al., J. Rheol. 57, 149-175 (2013)].
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Submitted 29 July, 2014;
originally announced July 2014.
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Polarization vortex domains induced by switching electric field in ferroelectric films with circular electrodes
Authors:
Laurent Baudry,
Anaïs Sené,
Igor A. Luk'yanchuk,
Laurent Lahoche,
James F Scott
Abstract:
We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for which boundary conditions are well known to play an important role in ferroelectric properties. We have explored a new switching mechanism, which consists of an inh…
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We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for which boundary conditions are well known to play an important role in ferroelectric properties. We have explored a new switching mechanism, which consists of an inhomogeneous rotational motion of the polarization and leads to an extended vortex state. The vortex appearance exhibits characteristic properties of a first-order field-induced phase transition: three critical electric fields and the possibility of hysteresis behavior.
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Submitted 22 April, 2014; v1 submitted 20 March, 2014;
originally announced March 2014.
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Multifunctional Magnetoelectric Materials for Device Applications
Authors:
N. Ortega,
Ashok Kumar,
J. F. Scott,
Ram S. Katiyar
Abstract:
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pu…
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Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarizes the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite, and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which signal to noise ratio is good for device fabrication. We describe the possible applications of these materials.
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Submitted 7 March, 2014;
originally announced March 2014.
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Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films
Authors:
Shalini Kumari,
Nora Ortega,
Ashok Kumar,
J. F. Scott,
R. S. Katiyar
Abstract:
We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly…
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We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light.
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Submitted 3 March, 2014;
originally announced March 2014.
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Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams
Authors:
Rajeev Ahluwalia,
Nathaniel Ng,
Alina Schilling,
Raymond McQuaid,
Donald Evans,
J. M. Gregg,
David J. Srolovitz,
J. F. Scott
Abstract:
Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90° domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns in the same systems imaged by piezoresponse force microscopy. Based upon a series of phase field simulations of BaTiO3 nanodots, we suggest that the TEM patterns re…
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Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90° domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns in the same systems imaged by piezoresponse force microscopy. Based upon a series of phase field simulations of BaTiO3 nanodots, we suggest that the TEM patterns result from a radial electric field arising from electron beam charging of the nanodot. For sufficiently large charging, this converts flux-closure domain patterns to quadrant patterns with radial net polarizations. Not only does this explain the puzzling patterns that have been observed in TEM studies of ferroelectric nanodots, but also suggests how to manipulate ferroelectric domain patterns via electron beams.
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Submitted 30 October, 2013;
originally announced October 2013.
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High-Symmetry Polarization Domains in Low-Symmetry Ferroelectrics
Authors:
I. Lukyanchuk,
P. Sharma,
T. Nakajima,
S. Okamura,
J. F. Scott,
A. Gruverman
Abstract:
We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more s…
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We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more symmetrical circular harmonics is favored in ferroelectrics with high dielectric constant.
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Submitted 1 September, 2013;
originally announced September 2013.
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Reduced graphene oxide as ultra fast temperature sensor
Authors:
Satyaprakash Sahoo,
Sujit K. Barik,
G. L. Sharma,
Geetika Khurana,
J. F. Scott,
Ram S. Katiyar
Abstract:
We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by keeping and removing a block of ice under the rGO sensor, which shows the resistance of rGO…
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We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by keeping and removing a block of ice under the rGO sensor, which shows the resistance of rGO increases by 15% in 592 miliseconds and recovers in 8.92 seconds. The temperature sensing of rGO is compared with a standard platinum thermo sensor (Pt 111) and found the sensitivity is much better in rGO.
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Submitted 5 September, 2012; v1 submitted 9 April, 2012;
originally announced April 2012.
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In-plane Dielectric and Magnetoelectric Studies of BiFeO3
Authors:
Ashok Kumar,
J. F. Scott,
R. Martinez,
G. Srinivasan,
R. S. Katiyar
Abstract:
In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface…
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In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface phase transition recently reported [Xavi et al. PRL 106, 236101 (2011)]. In addition, anomalies are found at low temperatures: After several experimental cycles the dielectric loss shows a clear relaxor-like phase transition near what was previously suggested to be a spin reorientation transition (SRT) temperature (~ 201 K) for frequencies 1 kHz < f < 1MHz which follow a nonlinear Vogel-Fulcher (V-F) relation; an additional sharp anomaly is observed near ~180 K at frequencies below 1 kHz. As emphasized recently by Cowley et al. [Adv. Phys. 60, 229 (2011)], skin effects are expected for all relaxor ferroelectrics. Using the interdigital electrodes, experimental data and a theoretical model for in-plane longitudinal and transverse direct magnetoelectric (ME) coefficient are presented.
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Submitted 20 February, 2012;
originally announced February 2012.
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Surface phase transitions in BiFeO3 below room temperature
Authors:
R. Jarrier,
X. Marti,
J. Herrero-Albillos,
P. Ferrer,
R. Haumont,
P. Gemeiner,
G. Geneste,
P. Berthet,
T. Schülli,
P. Cvec,
R. Blinc,
Stanislaus S. Wong,
Tae-Jin Park,
M. Alexe,
M. A. Carpenter,
J. F. Scott,
G. Catalan,
B. Dkhil
Abstract:
We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystal…
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We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystals and, in order to maximize surface/volume ratio to enhance surface phase transition effects, BiFeO3 nanotubes were also studied. The transition at T=140.3K is shown to be a surface phase transition, with an associated sharp change in lattice parameter and charge density at the surface. Meanwhile, the 201K anomaly appears to signal the onset of glassy behaviour.
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Submitted 15 February, 2012;
originally announced February 2012.
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High-temperature spin-wave propagation in BiFeO3: relation to the Polomska transition
Authors:
Ashok Kumar,
J. F. Scott,
R. S. Katiyar
Abstract:
In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has impor…
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In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has important room-temperature device implications. The data show that ω(T) follows an S=5/2 Brillouin function and hence its Fe+3 ions are in the high-spin 5/2 state and not the low-spin S=1/2 state. The spin wave cannot be measured as a propagating wave above 455 K. We also suggest that since this temperature is coincident with the mysterious "Polomska transition" (M. Polomska et al., Phys. Stat. Sol. A 23, 567, (1974)) at 458+/-5 K, that this may be due to overdamping.
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Submitted 5 February, 2012;
originally announced February 2012.
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Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
Authors:
Daesu Lee,
A. Yoon,
S. Y. Jang,
J. -G. Yoon,
J. -S. Chung,
M. Kim,
J. F. Scott,
T. W. Noh
Abstract:
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and ele…
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We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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Submitted 19 June, 2011;
originally announced June 2011.
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Novel room temperature Multiferroics for Random Access Memory Elements
Authors:
Ashok Kumar,
Ram S. Katiyar,
James F. Scott
Abstract:
We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via…
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We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via electrostriction and magnetostriction. Application of modest magnetic field strength ((mu)0H < 1.0 Tesla) destabilizes the long-range ferroelectric ordering and switches the polarization from ca. 22 (mu)C/cm2 (0.22 C/m2) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, -P) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nC/cm2 values in terbium manganites) and at room-temperature, commercial devices should be possible.
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Submitted 16 June, 2010;
originally announced June 2010.
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Landau Theory of Domain Wall Magnetoelectricity
Authors:
Maren Daraktchiev,
Gustau Catalan,
James F. Scott
Abstract:
We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films fo this materia…
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We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films fo this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magnetoelectric devices based upon domain walls rather than bulk properties.
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Submitted 21 February, 2010; v1 submitted 19 February, 2010;
originally announced February 2010.
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Magnetic Effects on Dielectric and Polarization Behavior of Multiferroic Hetrostructures
Authors:
Sandra Dussan,
Ashok Kumar,
J. F. Scott,
Ram S. Katiyar
Abstract:
PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequenc…
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PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequency-dependent change in dielectric constant and loss were observed above the ferromagnetic-paramagnetic temperature. The frequency dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect across the bilayer; an enhanced magnetoelectric interaction may be due to the Parish-Littlewood mechanism of inhomogeneity near the metal-dielectric interface.
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Submitted 9 February, 2010;
originally announced February 2010.
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Processing and Characterization of Multiferroic Bi-relaxors
Authors:
Ashok Kumar,
R. S. Katiyar,
J. F. Scott
Abstract:
We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabr…
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We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabricated on platinized silicon substrate by CSD and as epitaxial single-crystal films on MgO substrate by PLD. High dielectric constants (1200- 3000), high polarization (30 - 60 micro C/cm2), weak saturation magnetization (0.48 - 4.53 emu/cm3), a broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current were observed in these materials, suggesting the family as candidates for room-temperature multiferroic devices. The ferroelectric switching in these materials can be suppressed or quenched with applied magnetic field.
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Submitted 8 February, 2010;
originally announced February 2010.
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Phonon Spectroscopy Near Phase Transition Temperatures in Multferroic BiFeO3 Epitaxial Thin Films
Authors:
R. Palai,
J. F. Scott,
R. S. Katiyar
Abstract:
We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand…
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We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand the origin of the weak phonon-magnon coupling and the dynamics of the phase sequence. The disappearance of several Raman modes at ~820C (Tc) is compatible with the known structural phase transition and the Pbnm orthoferrite space group assigned by Arnold {\it et al.} \cite{arnold:09}. The spectra also revealed a {\it non-cubic} $β$-phase from 820-930\dc and the same {\it non-cubic} phase extends through the $γ$-phase between 930-950\dc, in agreement with Arnold {\it et al.} \cite{arnold2:09}, and an evidence of a cubic $δ$-phase around 1000\dc in thin films that is not stable in powder and bulk. Such a cubic phase has been theoretically predicted in \cite{vasquez:prb09}. Micro-Raman scattering and X-ray diffraction showed no structural decomposition in thin films during the thermal cycling from 22-1000\dc.
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Submitted 12 January, 2010;
originally announced January 2010.
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Topology of the polarization field in ferroelectric nanowires from first principles
Authors:
J. W. Hong,
G. Catalan,
D. N. Fang,
Emilio Artacho,
J. F. Scott
Abstract:
The behaviour of the cross-sectional polarization field is explored for thin nanowires of barium titanate from first-principles calculations. Topological defects of different winding numbers have been obtained, beyond the known textures in ferroelectric nanostructures. They result from the inward accommodation of the polarization patterns imposed at the surface of the wire by surface and edge ef…
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The behaviour of the cross-sectional polarization field is explored for thin nanowires of barium titanate from first-principles calculations. Topological defects of different winding numbers have been obtained, beyond the known textures in ferroelectric nanostructures. They result from the inward accommodation of the polarization patterns imposed at the surface of the wire by surface and edge effects. Close to a topological defect the polarization field orients out of the basal plane in some cases, maintaining a close to constant magnitude, whereas it virtually vanishes in other cases.
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Submitted 25 August, 2009;
originally announced August 2009.
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The beta to gamma (insulator-metal) transition in BiFeO3
Authors:
Donna C. Arnold,
Kevin S. Knight,
Gustau Catalan,
Simon A. T. Redfern,
James F. Scott,
Philip Lightfoot,
Finlay D. Morrison
Abstract:
High temperature powder neutron diffraction experiments have been conducted around the reported beta-gamma, insulator-metal phase transition (~ 930 C) in BiFeO3. The results demonstrate that while a small volume contraction is observed at the transition temperature, consistent with an insulator-metal transition, both the beta and gamma phase of BiFeO3 exhibit orthorhombic symmetry i.e. no furthe…
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High temperature powder neutron diffraction experiments have been conducted around the reported beta-gamma, insulator-metal phase transition (~ 930 C) in BiFeO3. The results demonstrate that while a small volume contraction is observed at the transition temperature, consistent with an insulator-metal transition, both the beta and gamma phase of BiFeO3 exhibit orthorhombic symmetry i.e. no further increase of symmetry occurs under the present experimental conditions, contrary to previous suggestions. Furthermore we observe the gamma orthorhombic phase to persist up to a temperature of approximately 950 C before complete decomposition into Bi2Fe4O9 (and liquid Bi2O3), which subsequently begins to decompose at approximately 960 C.
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Submitted 13 November, 2009; v1 submitted 25 August, 2009;
originally announced August 2009.
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Effect of Chemical Pressure on the Magnetic Transition of Multiferroic Ca-BiFeO3
Authors:
G. Catalan,
K. Sardar,
N. S. Church,
J. F. Scott,
R. J. Harrison,
S. A. T. Redfern
Abstract:
Multiferroic BiFeO3 ceramics have been doped with Ca. The smaller ionic size of Ca compared with Bi means that doping acts as a proxy for hydrostatic pressure, at a rate of 1%Ca=0.3GPa. It is also found that the magnetic Neel temperature (TNeel) increases as Ca concentration increases, at a rate of 0.66K per 1%Ca (molar). Based on the effect of chemical pressure on TNeel, we argue that applying…
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Multiferroic BiFeO3 ceramics have been doped with Ca. The smaller ionic size of Ca compared with Bi means that doping acts as a proxy for hydrostatic pressure, at a rate of 1%Ca=0.3GPa. It is also found that the magnetic Neel temperature (TNeel) increases as Ca concentration increases, at a rate of 0.66K per 1%Ca (molar). Based on the effect of chemical pressure on TNeel, we argue that applying hydrostatic pressure to pure BiFeO3 can be expected to increase its magnetic transition temperature at a rate around ~2.2K/GPa. The results also suggest that pressure (chemical or hydrostatic) could be used to bring the ferroelectric critical temperature, Tc, and the magnetic TNeel closer together, thereby enhancing magnetoelectric coupling, provided that electrical conductivity can be kept sufficiently low.
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Submitted 17 March, 2009;
originally announced March 2009.
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Quantum criticality in ferroelectrics
Authors:
S. E. Rowley,
L. J. Spalek,
R. P. Smith,
M. P. M. Dean,
G. G. Lonzarich,
J. F. Scott,
S. S. Saxena
Abstract:
Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new effects, like the breakdown of the conventional Fermi-liquid theory of metals has been focused in narrow band electronic systems. Ferroelectric crystals provide a very different type of quantum criticality that arises purely from t…
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Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new effects, like the breakdown of the conventional Fermi-liquid theory of metals has been focused in narrow band electronic systems. Ferroelectric crystals provide a very different type of quantum criticality that arises purely from the crystalline lattice. In many cases the ferroelectric phase can be tuned to absolute zero using hydrostatic pressure or chemical or isotopic substitution. Close to such a zero temperature phase transition, the dielectric constant and other quantities change into radically unconventional forms due to the quantum fluctuations of the electrical polarization. The simplest ferroelectrics may form a text-book paradigm of quantum criticality in the solid-state as the difficulties found in metals due to a high density of gapless excitations on the Fermi surface are avoided. We present low temperature high precision data demonstrating these effects in pure single crystals of SrTiO3 and KTaO3. We outline a model for describing the physics of ferroelectrics close to quantum criticality and highlight the expected 1/T2 dependence of the dielectric constant measured over a wide temperature range at low temperatures. In the neighbourhood of the quantum critical point we report the emergence of a small frequency independent peak in the dielectric constant at approximately 2K in SrTiO3 and 3K in KTaO3 believed to arise from coupling to acoustic phonons. Looking ahead, we suggest that in ferroelectric materials supporting mobile charge carriers, quantum paraelectric fluctuations may mediate new effective electron-electron interactions giving rise to a number of possible states such as superconductivity.
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Submitted 9 March, 2009;
originally announced March 2009.
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Origin of Ferroelastic Domains in Free-Standing Single Crystal Ferroelectric Films
Authors:
I. A. Luk'yanchuk,
A. Schilling,
J. M. Gregg,
G. Catalan,
J. F. Scott
Abstract:
The origin of the unusual 90^o ferroelectric / ferroelastic domains, consistently observed in recent studies on meso and nanoscale free-standing single crystals of BaTiO3 [Schilling et al., Physical Review B, 74, 024115 (2006); Schilling et al., Nano Letters, 7, 3787 (2007)], has been considered. A model has been developed which postulates that the domains form as a response to elastic stress in…
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The origin of the unusual 90^o ferroelectric / ferroelastic domains, consistently observed in recent studies on meso and nanoscale free-standing single crystals of BaTiO3 [Schilling et al., Physical Review B, 74, 024115 (2006); Schilling et al., Nano Letters, 7, 3787 (2007)], has been considered. A model has been developed which postulates that the domains form as a response to elastic stress induced by a surface layer which does not undergo the paraelectric-ferroelectric, cubic-tetragonal phase transition. This model was found to accurately account for the changes in domain periodicity as a function of size that had been observed experimentally. The physical origin of the surface layer might readily be associated with patterning damage, seen in experiment; however, when all evidence of physical damage is removed from the BaTiO3 surfaces by thermal annealing, the domain configuration remains practically unchanged. This suggests a more intrinsic origin, such as the increased importance of surface tension at small dimensions. The effect of surface tension is also shown to be proportional to the difference in hardness between the surface and the interior of the ferroelectric. The present model for surface tension induced twinning should also be relevant for finely grained or core-shell structured ceramics.
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Submitted 4 March, 2009;
originally announced March 2009.
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Structural Origin of the Metal-Insulator Transition of Multiferroic BiFeO3
Authors:
S. A. T. Redfern,
J. N. Walsh,
S. M. Clark,
G. Catalan,
J. F. Scott
Abstract:
We report X-ray structural studies of the metal-insulator phase transition in bismuth ferrite, BiFeO3, both as a function of temperature and of pressure (931 oC at atmospheric pressure and ca. 45 GPa at ambient temperature). Based on the experimental results, we argue that the metallic gamma-phase is not rhombohedral but is instead the same cubic Pm3m structure whether obtained via high temperat…
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We report X-ray structural studies of the metal-insulator phase transition in bismuth ferrite, BiFeO3, both as a function of temperature and of pressure (931 oC at atmospheric pressure and ca. 45 GPa at ambient temperature). Based on the experimental results, we argue that the metallic gamma-phase is not rhombohedral but is instead the same cubic Pm3m structure whether obtained via high temperature or high pressure, that the MI transition is second order or very nearly so, that this is a band-type transition due to semi-metal band overlap in the cubic phase and not a Mott transition, and that it is primarily structural and not an S=5/2 to S=1/2 high-spin/low-spin electronic transition. Our data are compatible with the orthorhombic Pbnm structure for the beta-phase determined definitively by the neutron scattering study of Arnold et al .[Phys. Rev. Lett. 2009]; the details of this beta-phase had also been controversial, with a remarkable collection of five crystal classes (cubic, tetragonal, orthorhombic, monoclinic, and rhombohedral!) all claimed in recent publications.
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Submitted 5 February, 2009; v1 submitted 23 January, 2009;
originally announced January 2009.
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Magnetic control of large room-temperature polarization
Authors:
Ashok Kumar,
G. L. Sharma,
R. S. Katiyar R. Pirc,
R. Blinc J. F. Scott
Abstract:
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric relaxor nano-regions. Here we report magnetic switching between the normal ferroelectric state and the ferroelectric relaxor state. This gives bot…
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Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric relaxor nano-regions. Here we report magnetic switching between the normal ferroelectric state and the ferroelectric relaxor state. This gives both a new room-temperature, single-phase, multiferroic magnetoelectric, PbZr0.46Ti0.34Fe0.13W0.07O3, with polarization, loss (<4%), and resistivity (typically 108 -109 ohm.cm) equal to or superior to BiFeO3, and also a new and very large magnetoelectric effect: switching not from +Pr to negative Pr with applied H, but from Pr to zero with applied H of less than a Tesla. This switching of the polarization occurs not because of a conventional magnetically induced phase transition, but because of dynamic effects: Increasing H lengthens the relaxation time by x500 from <200 ns to >100 ?s, and it couples strongly the polarization relaxation and spin relaxations. The diverging polarization relaxation time accurately fits a modified Vogel-Fulcher Equation in which the freezing temperature Tf is replaced by a critical freezing field Hf that is 0.92 positive/negative 0.07 Tesla. This field dependence and the critical field Hc are derived analytically from the spherical random bond random field (SRBRF) model with no adjustable parameters and an E2H2 coupling. This device permits 3-state logic (+Pr,0,negative Pr) and a condenser with >5000% magnetic field change in its capacitance.
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Submitted 24 February, 2009; v1 submitted 19 December, 2008;
originally announced December 2008.
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Almeida-Thouless Line in BiFeO3: Is Bismuth Ferrite a mean field spin glass?
Authors:
Manoj K. Singh,
Ram S. Katiyar,
W. Prellier,
J. F. Scott
Abstract:
Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-g…
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Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-glass behavior and mean field system.
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Submitted 14 November, 2008;
originally announced November 2008.
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Magnetoelastic-magnetoelectric phase transitions in multiferroic BiFeO3
Authors:
S. A. T. Redfern,
C. Wang,
J. W. Hong,
G. Catalan,
J. F. Scott
Abstract:
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic susceptibility) and 230K (from splitting between field-cooled and zero-field-cooled magnetic data[1], and 200K (from magnon light scattering cross sections[2]). The prim…
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Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic susceptibility) and 230K (from splitting between field-cooled and zero-field-cooled magnetic data[1], and 200K (from magnon light scattering cross sections[2]). The primary order parameter is not the polarization in any of the low-T transitions. Instead, the transition near 230 K shows strong elastic coupling, while that at 50K is fundamentally magnetic, but magnetostrictively coupled to the the lattice. The low-T phase transitions display glassy behaviour. A further anomaly at 140K interpreted as spin reorientation[2,3] shows only weakly in dielectric and mechanical studies, indicating that it is predominantly magnetic with little coupling to any of the other order parameters.
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Submitted 23 June, 2008; v1 submitted 19 June, 2008;
originally announced June 2008.