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Integration of through-sapphire substrate machining with superconducting quantum processors
Authors:
Narendra Acharya,
Robert Armstrong,
Yashwanth Balaji,
Kevin G Crawford,
James C Gates,
Paul C Gow,
Oscar W Kennedy,
Renuka Devi Pothuraju,
Kowsar Shahbazi,
Connor D Shelly
Abstract:
We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so mate…
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We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so material choices are an important consideration when developing a qubit technology platform. Sapphire, as a low-loss dielectric substrate, has shown to support high-coherence qubits. In addition, recent advances in material choices such as tantalum and titanium-nitride, both deposited on a sapphire substrate, have demonstrated qubit lifetimes exceeding 0.3 ms. However, the lack of any process equivalent of deep-silicon etching to create through-substrate-vias in sapphire, or to inductively shunt large dies, has limited sapphire to small-scale processors, or necessitates the use of chiplet architecture. Here, we present a sapphire machining process that is compatible with high-coherence qubits. This technique immediately provides a means to scale QPUs with integrated mode-mitigation, and provides a route toward the development of through-sapphire-vias, both of which allow the advantages of sapphire to be leveraged as well as facilitating the use of sapphire-compatible materials for large-scale QPUs.
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Submitted 14 June, 2024;
originally announced June 2024.
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Electron-beam annealing of Josephson junctions for frequency tuning of quantum processors
Authors:
Yashwanth Balaji,
Narendra Acharya,
Robert Armstrong,
Kevin G. Crawford,
Sergey Danilin,
Thomas Dixon,
Oscar W. Kennedy,
Renuka Devi Pothuraju,
Kowsar Shahbazi,
Connor D. Shelly
Abstract:
Superconducting qubits are a promising route to achieving large-scale quantum computers. A key challenge in realising large-scale superconducting quantum processors involves mitigating frequency collisions. In this paper, we present an approach to tuning fixed-frequency qubits with the use of an electron beam to locally anneal the Josephson junction. We demonstrate the ability to both increase and…
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Superconducting qubits are a promising route to achieving large-scale quantum computers. A key challenge in realising large-scale superconducting quantum processors involves mitigating frequency collisions. In this paper, we present an approach to tuning fixed-frequency qubits with the use of an electron beam to locally anneal the Josephson junction. We demonstrate the ability to both increase and decrease the junction barrier resistance. The technique shows an improvement in wafer scale frequency targetting by assessing the frequency collisions in our qubit architecture. Coherence measurements are also done to evaluate the performance before and after tuning. The tuning process utilises a standard electron beam lithography system, ensuring reproducibility and implementation by any group capable of fabricating these Josephson junctions. This technique has the potential to significantly improve the performance of large-scale quantum computing systems, thereby paving the way for the future of quantum computing.
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Submitted 27 February, 2024;
originally announced February 2024.
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Domain Wall Motion and Interfacial Dzyaloshinskii-Moriya Interactions in Pt/Co/Ir$(t_\mathrm{Ir})$/Ta Multilayers
Authors:
Kowsar Shahbazi,
Joo-Von Kim,
Hans T. Nembach,
Justin M. Shaw,
Andreas Bischof,
Marta D. Rossell,
Vincent Jeudy,
Thomas A. Moore,
Christopher H. Marrows
Abstract:
The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta. We observe a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the pe…
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The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta. We observe a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the perpendicular anisotropy is hardly affected. All samples show a universal scaling of the field-driven domain wall velocity across the creep and depinning regimes. Asymmetric bubble expansion shows that DWs in all of the samples have the left-handed Néel form. The value of in-plane field at which the creep velocity shows a minimum drops markedly on the introduction of Ir, as does the frequency shift of the Stokes and anti-Stokes peaks in Brillouin light scattering measurements. Despite this qualitative similarity, there are quantitative differences in the DMI strength given by the two measurements, with BLS often returning higher values. Many features in bubble expansion velocity curves do not fit simple models commonly used to date, namely a lack of symmetry about the velocity minimum and no difference in velocities at high in-plane field. These features are explained by the use of a model in which the depinning field is allowed to vary with in-plane field in a way determined from micromagnetic simulations. This theory shows that velocity minimum underestimates the DMI field, consistent with BLS returning higher values. Our results suggest that the DMI at an Ir/Co interface has the same sign as the DMI at a Pt/Co interface.
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Submitted 8 October, 2018;
originally announced October 2018.
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Magnetic properties and field-driven dynamics of chiral domain walls in epitaxial Pt/Co/Au$_x$Pt$_{1-x}$ trilayers
Authors:
Kowsar Shahbazi,
Aleš Hrabec,
Simone Moretti,
Michael B. Ward,
Thomas A. Moore,
Vincent Jeudy,
Eduardo Martinez,
Christopher H. Marrows
Abstract:
Chiral domain walls in ultrathin perpendicularly magnetised layers have a Néel structure stabilised by a Dzyaloshinskii-Moriya interaction (DMI) that is generated at the interface between the ferromagnet and a heavy metal. Different heavy metals are required above and below a ferromagnetic film in order to generate the structural inversion asymmetry needed to ensure that the DMI arising at the two…
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Chiral domain walls in ultrathin perpendicularly magnetised layers have a Néel structure stabilised by a Dzyaloshinskii-Moriya interaction (DMI) that is generated at the interface between the ferromagnet and a heavy metal. Different heavy metals are required above and below a ferromagnetic film in order to generate the structural inversion asymmetry needed to ensure that the DMI arising at the two interfaces does not cancel. Here we report on the magnetic properties of epitaxial Pt/Co/Au$_x$Pt$_{1-x}$ trilayers grown by sputtering onto sapphire substrates with 0.6 nm thick Co. As $x$ rises from 0 to 1 a structural inversion asymmetry is generated. We characterise the epilayer structure with x-ray diffraction and cross-sectional transmission electron microscopy, revealing (111) stacking. The saturation magnetization falls as the proximity magnetisation in Pt is reduced, whilst the perpendicular magnetic anisotropy $K_\mathrm{u}$ rises. The micromagnetic DMI strength $D$ was determined using the bubble expansion technique and also rises from a negligible value when $x=0$ to $\sim 1$ mJ/m$^2$ for $x = 1$. The depinning field at which field-driven domain wall motion crosses from the creep to the depinning regime rises from $\sim 40$ to $\sim 70$ mT, attributed to greater spatial fluctuations of the domain wall energy with increasing Au concentration. Meanwhile, the increase in DMI causes the Walker field to rise from $\sim 10$ to $\sim 280$ mT, meaning that only in the $x = 1$ sample is the steady flow regime accessible. The full dependence of domain wall velocity on driving field bears little resemblance to the prediction of a simple one-dimensional model, but can be described very well using micromagnetic simulations with a realistic model of disorder. These reveal a rise in Gilbert damping as $x$ increases.
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Submitted 8 November, 2018; v1 submitted 10 September, 2018;
originally announced September 2018.
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Role of phonon skew scattering in the spin Hall effect of platinum
Authors:
G. V. Karnad,
C. Gorini,
K. Lee,
T. Schulz,
R. Lo Conte,
A. W. J. Wells,
D. -S. Han,
K. Shahbazi,
J. -S. Kim,
T. A. Moore,
H. J. M. Swagten,
U. Eckern,
R. Raimondi,
M. Kläui
Abstract:
We measure and analyze the effective spin Hall angle of platinum in the low residual resistivity regime by second harmonic measurements of the spin-orbit torques for a multilayer of Pt/Co/AlO$_x$. An angular dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly non-monotonic and reproducible…
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We measure and analyze the effective spin Hall angle of platinum in the low residual resistivity regime by second harmonic measurements of the spin-orbit torques for a multilayer of Pt/Co/AlO$_x$. An angular dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly non-monotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperature.
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Submitted 26 February, 2018;
originally announced February 2018.
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Discrete Hall resistivity contribution from Néel skyrmions in multilayer nanodiscs
Authors:
Katharina Zeissler,
Simone Finizio,
Kowsar Shahbazi,
Jamie Massey,
Fatma Al Ma`Mari,
David M. Bracher,
Armin Kleibert,
Mark C. Rosamond,
Edmund H. Linfield,
Thomas A. Moore,
Jörg Raabe,
Gavin Burnell,
Christopher H. Marrows
Abstract:
Magnetic skyrmions are knot-like quasiparticles. They are candidates for non-volatile data storage in which information is moved between fixed read and write terminals. Read-out operation of skyrmion-based spintronic devices will rely upon electrical detection of a single magnetic skyrmion within a nanostructure. Here, we present Pt/Co/Ir nanodiscs which support skyrmions at room temperature. We m…
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Magnetic skyrmions are knot-like quasiparticles. They are candidates for non-volatile data storage in which information is moved between fixed read and write terminals. Read-out operation of skyrmion-based spintronic devices will rely upon electrical detection of a single magnetic skyrmion within a nanostructure. Here, we present Pt/Co/Ir nanodiscs which support skyrmions at room temperature. We measured the Hall resistivity whilst simultaneously imaging the spin texture using magnetic scanning transmission x-ray microscopy (STXM). The Hall resistivity is correlated to both the presence and size of the skyrmion. The size-dependent part matches the expected anomalous Hall signal when averaging the magnetisation over the entire disc. We observed a resistivity contribution which only depends on the number and sign of skyrmion-like objects present in the disc. Each skyrmion gives rise to 22$\pm$2 nΩ cm irrespective of its size. This contribution needs to be considered in all-electrical detection schemes applied to skyrmion-based devices.
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Submitted 7 August, 2018; v1 submitted 19 June, 2017;
originally announced June 2017.
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Magnetic properties, domain wall creep motion and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films
Authors:
Philippa M. Shepley,
Harry Tunnicliffe,
Kowsar Shahbazi,
Gavin Burnell,
Thomas A. Moore
Abstract:
We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the Co layer thickness dependence of saturation magnetisation, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e. DM) exchange energies in Pt/C…
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We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the Co layer thickness dependence of saturation magnetisation, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e. DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter $α$, we find that both $α$ and the velocity scaling parameter $v_{0}$ change as a function of in-plane bias field.
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Submitted 19 April, 2018; v1 submitted 16 March, 2017;
originally announced March 2017.
