Showing 1–14 of 14 results for author: Slesazeck, S

Weight update in ferroelectric memristors with identical and non-identical pulses

Authors: Suzanne Lancaster, Maximilien Remillieux, Moritz Engl, Viktor Havel, Claudia Silva, Xuetao Wang, Thomas Mikolajick, Stefan Slesazeck

Abstract: Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10… ▽ More Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10 s. Experimentally, a method for achieving non-linear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in sub-threshold or saturation mode. This leads to a maximum linearity in the weight update of 87%. The scaling behaviour of this scheme as devices are reduced to the sub-micron range is investigated, and the linearity slightly reduces in scaled devices to a maximum of 81%. The origin of the remaining non-linearity is discussed, as well as how this can be overcome. △ Less

Submitted 22 July, 2024; originally announced July 2024.

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Authors: Suzanne Lancaster, Thomas Mikolajick, Stefan Slesazeck

Abstract: A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which… ▽ More A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after `normal' wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case the voltage applied during wakeup was reduced by 26\%, thereby lowering the required operating power. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

Authors: Suzanne Lancaster, Quang T. Duong, Erika Covi, Thomas Mikolajick, Stefan Slesazeck

Abstract: HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple pa… ▽ More HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple parallel connected FTJ devices. Moreover, from the circuit requirements we deduce that the absolute difference in currents (Ion - Ioff) is a more critical figure of merit than the tunneling electroresistance ratio (TER). Based on this, we discuss the potential of FTJ device optimization by means of electrode work function engineering in bilayer HZO/Al2O3 FTJs. △ Less

Submitted 1 November, 2022; v1 submitted 21 September, 2022; originally announced September 2022.

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrían Gudín, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker in… ▽ More Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application. △ Less

Submitted 6 September, 2022; v1 submitted 30 August, 2022; originally announced August 2022.

Investigating charge trapping in ferroelectric thin films through transient measurements

Authors: Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck

Abstract: A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a… ▽ More A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trapping lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trapping and screening model could be identified which describes the dynamics of polarization loss on short timescales. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Journal ref: Front. Nanotechnol., 17 August 2022

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrian Gudín, Alejandra Guedeja-Marrón, Jose Manuel Diez Toledano, Jan Gärtner, Alberto Anadón, Maria Varela, Julio Camarero, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation… ▽ More Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. △ Less

Submitted 23 March, 2023; v1 submitted 20 September, 2021; originally announced September 2021.

Comments: Accepted at ACS Applied Materials & Interfaces

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

Authors: Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick

Abstract: Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm ran… ▽ More Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling layer with a higher bandgap, a significant TER ratio between the two polarization states is obtained. By exploiting previously reported switching behaviour and the gradual tunability of the resistance, FTJs can be used as potential candidates for the emulation of synapses for neuromorphic computing in spiking neural networks. The implementation of two major components of a synapse are shown: long term depression/potentiation by varying the amplitude/width/number of voltage pulses applied to the artificial FTJ synapse, and spike-timing-dependent-plasticity curves by applying time-delayed voltages at each electrode. These experimental findings show the potential of spiking neural networks and neuromorphic computing that can be implemented with hafnia-based FTJs. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Journal ref: ACS Applied Electronic Materials 2 12 2020 4023-4033

2022 Roadmap on Neuromorphic Computing and Engineering

Authors: Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri , et al. (34 additional authors not shown)

Abstract: Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas… ▽ More Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83 △ Less

Submitted 13 January, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: Neuromorph. Comput. Eng. 2 022501 (2022)

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Authors: Michael Hoffmann, Zheng Wang, Nujhat Tasneem, Ahmad Zubair, Prasanna Venkat Ravindran, Mengkun Tian, Anthony Gaskell, Dina Triyoso, Steven Consiglio, Kanda Tapily, Robert Clark, Jae Hur, Sai Surya Kiran Pentapati, Milan Dopita, Shimeng Yu, Winston Chern, Josh Kacher, Sebastian E. Reyes-Lillo, Dimitri Antoniadis, Jayakanth Ravichandran, Stefan Slesazeck, Thomas Mikolajick, Asif Islam Khan

Abstract: Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are diffe… ▽ More Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions. △ Less

Submitted 21 April, 2021; originally announced April 2021.

Ferroelectric Negative Capacitance Domain Dynamics

Authors: Michael Hoffmann, Asif Islam Khan, Claudy Serrao, Zhongyuan Lu, Sayeef Salahuddin, Milan Pešić, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick

Abstract: Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-depen… ▽ More Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions. △ Less

Submitted 19 November, 2017; originally announced November 2017.

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Authors: Milan Pešić, Christopher Künneth, Michael Hoffmann, Halid Mulaosmanovic, Stefan Müller, Evelyn T. Breyer, Uwe Schroeder, Alfred Kersch, Thomas Mikolajick, Stefan Slesazeck

Abstract: The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the dev… ▽ More The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multilevel operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device-level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Substrate effect on the resistive switching in BiFeO3 thin films

Authors: Yao Shuai, Xin Ou, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Buerger, Helfried Reuther, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top… ▽ More BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors. △ Less

Submitted 26 September, 2012; originally announced September 2012.

Comments: 11 pages, 3 figures

Journal ref: J. Appl. Phys. 111, 07D906 (2012)

Control of rectifying and resistive switching behavior in BiFeO3 thin films

Authors: Yao Shuai, Shengqiang Zhou, Chuangui Wu, Wanli Zhang, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies a… ▽ More BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention. △ Less

Submitted 17 August, 2011; originally announced August 2011.

Comments: 13 pages, 3 fitures

Journal ref: Appl. Phys. Express 4 (2011) 095802

Reduced leakage current in BiFeO3 thin films with rectifying contacts

Authors: Yao Shuai, Shengqiang Zhou, Stephan Streit, Helfried Reuther, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, Heidemarie Schmidt

Abstract: BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has t… ▽ More BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 15 pages, 4 figures, accepted by Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 98, 232901 (2011)