Showing 1–30 of 30 results for author: Perna, P

Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

Authors: Alberto Anadón, Armando Pezo, Iciar Arnay, Rubén Guerrero, Adrián Gudín, Jaafar Ghanbaja, Julio Camarero, Aurelien Manchon, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum… ▽ More The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pumping on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 33 pages with double-spaced paragraphs. 23 pages without references. 4 figures and one extended figure. Supplementary information, not shown, contains 21 pages and 23 supplementary figures

Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers

Authors: Adrián Gudín, Alberto Anadón, Iciar Arnay, Rubén Guerrero, Julio Camarero, Sebastien Petit-Watelot, Paolo Perna, Juan-Carlos Rojas-Sánchez

Abstract: The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion ef… ▽ More The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion efficiency is isotropic in polycrystalline Pt samples, an ongoing debate persists regarding its dependence on the crystalline direction in single crystalline samples. In this study, we aim to comprehensively evaluate the in-plane anisotropy of spin-charge interconversion using an array of complementary Spin Hall and inverse Spin Hall techniques with both incoherent and coherent excitation. Specifically, we investigate the spin-to-charge interconversion in epitaxial, (111)-oriented, Co/Pt bilayers with low surface roughness, as resulted from x-ray experiments. By varying the thickness of the Pt layer, we gain insights into the spin-charge interconversion in epitaxial Pt and highlight the effects of the interfaces. Our results demonstrate an isotropic behavior within the limits of our detection uncertainty. This finding significantly enhances our understanding of spin conversion in one of the most relevant systems in spintronics and paves the way for future research in this field. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Comments: Article accepted for publication in Physical Review Materials, DOI not received yet

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrían Gudín, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker in… ▽ More Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application. △ Less

Submitted 6 September, 2022; v1 submitted 30 August, 2022; originally announced August 2022.

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Authors: Beatriz Muñiz Cano, Adrían Gudín, Jaime Sánchez-Barriga, Oliver J. Clark, Alberto Anadón, Jose Manuel Díez, Pablo Olleros-Rodríguez, Fernando Ajejas, Iciar Arnay, Matteo Jugovac, Julien Rault, Patrick Le Févre, François Bertran, Donya Mazhjoo, Gustav Bihlmayer, Stefan Blügel, Rodolfo Miranda, Julio Camarero, Miguel Angel Valbuena, Paolo Perna

Abstract: Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g… ▽ More Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices. △ Less

Submitted 1 May, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Authors: Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrian Gudín, Alejandra Guedeja-Marrón, Jose Manuel Diez Toledano, Jan Gärtner, Alberto Anadón, Maria Varela, Julio Camarero, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck

Abstract: Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation… ▽ More Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. △ Less

Submitted 23 March, 2023; v1 submitted 20 September, 2021; originally announced September 2021.

Comments: Accepted at ACS Applied Materials & Interfaces

Direct X-ray detection of the spin Hall effect in CuBi

Authors: Sandra Ruiz-Gómez, Rubén Guerrero, Muhammad W. Khaliq, Claudia Fernández-González, Jordi Prat, Andrés Valera, Simone Finizio, Paolo Perna, Julio Camarero, Lucas Pérez, Lucía Aballe, Michael Foerster

Abstract: The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However, most detection schemes involve additional interfaces, leading to large scattering in reported data. Here we perform interface free x-ray spectroscop… ▽ More The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However, most detection schemes involve additional interfaces, leading to large scattering in reported data. Here we perform interface free x-ray spectroscopy measurements at the Cu L_{3,2} absorption edges of highly Bi-doped Cu (Cu_{95}Bi_{5}). The detected X-ray magnetic circular dichroism (XMCD) signal corresponds to an induced magnetic moment of (2.7 +/- 0.5) x 10-12 μ_{B} A^{-1} cm^{2} per Cu atom averaged over the probing depth, which is of the same order as for Pt measured by magneto-optics. The results highlight the importance of interface free measurements to assess material parameters and the potential of CuBi for spin-charge conversion applications. △ Less

Submitted 6 July, 2021; originally announced July 2021.

Origin of the Large Perpendicular Magnetic Anisotropy in Nanometer-thick Epitaxial Graphene/Co/Heavy Metal Heterostructures

Authors: M. Blanco-Rey, P. Perna, A. Gudin, J. M. Diez, A. Anadon Leticia de Melo Costa, Manuel Valvidares, Pierluigi Gargiani, Alejandra Guedeja-Marron, Mariona Cabero, M. Varela, C. Garcia-Fernandez, M. M. Otrokov, J. Camarero, R. Miranda, A. Arnau, J. I. Cerda

Abstract: A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which ac… ▽ More A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal ($fct$) films, with a reduced number of stacking faults as the only structural defect observable by high resolution scanning transmission electron microscopy (HR-STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4~nm (20~ML) and 2~nm (10~ML) for Pt and Ir substrates, respectively, while X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anistropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co $fct$ films on HM buffers do not sustain PMAs beyond around 6~MLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local $hcp$ stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir). △ Less

Submitted 11 December, 2020; originally announced December 2020.

Comments: 25 pages, 4 figures, 1 table

Non-equilibrium heating path for utrafast laser-induced nucleation of skyrmion lattices

Authors: Pablo Olleros-Rodríguez, Mara S. Strungaru, Sergiu I. Ruta, Paul I. Gavriloaea, Paolo Perna, Roy W. Chantrell, Oksana Chubykalo-Fesenko

Abstract: We explore the helicity-independent light-induced nucleation of skyrmion lattices in ferromagnetic cobalt-based trilayers with perpendicular magnetic anisotropy. Using Atomistic Spin Dynamics simulations, we show that a high temperature excitation followed by magnon drops and their non-equilibrium relaxation, accessed by an ultrafast laser excitation with specific duration and intensity, can lead… ▽ More We explore the helicity-independent light-induced nucleation of skyrmion lattices in ferromagnetic cobalt-based trilayers with perpendicular magnetic anisotropy. Using Atomistic Spin Dynamics simulations, we show that a high temperature excitation followed by magnon drops and their non-equilibrium relaxation, accessed by an ultrafast laser excitation with specific duration and intensity, can lead to the generation of a skyrmion lattice stable at room temperature. The nucleation window, the topological density and the skyrmion polarity can be additionally manipulated by external magnetic fields. Our results provide insight into the non-equilibrium nature of skyrmionic excitations at non-zero temperatures and pave additional routes for their use in information technologies. △ Less

Submitted 17 November, 2020; v1 submitted 11 November, 2020; originally announced November 2020.

Direct determination of Spin-Orbit torque by using dc current-voltage characteristics

Authors: R. Guerrero, A. Anadon, A. Gudin, J. M. Diez, P. Olleros-Rodriguez, M. Muñoz, R. Miranda, J. Camarero, P. Perna

Abstract: Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injec… ▽ More Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidamping and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Experimental evidence of spin-orbit torque from metallic interfaces

Authors: A. Anadón, R. Guerrero, J. A. Jover-Galtier, A. Gudín, J. M. Díez, P. Olleros-Rodríguez, R. Miranda, J. Camarero, P. Perna

Abstract: Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer i… ▽ More Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion model that provides information on the expected spin currents and spin accumulations in the system. The results demonstrate that the major responsible of both effects is spin memory loss at the interface. The enhancement of the spin-orbit torque when introducing an interlayer opens the possibility to design more effient spintronic devices based on materials that are cheap and abundant such as copper. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 12 pages, 5 figures

Journal ref: ACS Appl. Nano Mater. 2021, 4, 1, 487-492

Intrinsic mixed Bloch-Néel character and chirality switch of skyrmions in asymmetric epitaxial trilayer

Authors: Pablo Olleros-Rodríguez, Ruben Guerrero, Julio Camarero, Oksana Chubykalo-Fesenko, Paolo Perna

Abstract: Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface m… ▽ More Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface magnetic anisotropy, whose relative strengths may be tuned to achieve stable nanometer sized magnetic objects with fixed chirality. While in most of the cases this is obtained by engineering complex multilayers stacks in which interlayer dipolar fields become important, we consider here a simple epitaxial trilayer in which a ferromagnet, with variable thickness, is embedded between a heavy metal and graphene. The latter enhances the perpendicular magnetic anisotropy of the system, promotes a Rashba-type DMI, and can sustain very long spin diffusion length. We use a layer-resolved micromagnetic model (LRM) to describe the magnetization textures and their chirality. Our results demonstrate that for Co thickness larger than 3.6 nm, a skyrmion having an intrinsic mixed Bloch-Néel character with counter-clock-wise chirality is stabilized in the entire (single) Co layer. Noteworthy, for thicknesses larger than 5.4 nm, the skyrmion switches its chirality, from counter-clock-wise to clock-wise. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: 10 pages, 7 figures

Journal ref: ACS Appl. Mater. Interfaces 2020

Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces

Authors: F. Ajejas, A. Anadón, A. Gudin, J. M. Diez, C. G. Ayani, P. Olleros, L. de Melo Costa, C. Navío, A. Gutierrez, F. Calleja, A. L. Vázquez de Parga, R. Miranda, J. Camarero, P. Perna

Abstract: The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by in… ▽ More The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we achieve a nanoscale control of thermal activated intercalation of homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited in turn onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters, and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in-situ high quality Gr-FM/HM heterostructures enabling the realization of novel spin-orbitronic devices that exploits the extraordinary properties of Gr. △ Less

Submitted 19 November, 2019; v1 submitted 18 November, 2019; originally announced November 2019.

Comments: 13 pages, 6 figures

Journal ref: ACS Appl. Mater. Interfaces 2019

Towards magnetic control of magnetite

Authors: F. J. Pedrosa, J. L. F. Cuñado, P. Perna, M. Sanz, M. Oujja, E. Rebollar, J. F. Marco, J. de la Figuera, M. Monti, M. Castillejo, M. Garcia-Hernández, F. Mompeán, J. Camarero, A. Bollero

Abstract: High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(… ▽ More High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(001) films. By comparison, polycrystalline magnetite films were obtained on both single crystal Al2O3(0001) and amorphous Si/SiO2 substrates. The thickness has been varied between 50 - 400 nm. All films consist of nanocrystalline stoichiometric magnetite with very small strain (<1\%) and present the Verwey transition (Tv) between 110-120 K, i.e., close to bulk magnetite (122 K). In general, Tv depends on both microstructure and thickness, increasing mainly as the thickness increases. Room temperature angular-dependent measurements reveal an in-plane fourfold symmetry magnetic behavior for all films grown on (001)-oriented surfaces, and with the easy axes lying along the Fe3O4 [010] and [100] directions. Remarkably, the fourfold magnetic symmetry shows up to 400 nm thick films. In turn, the films grown on single crystal Al2O3 (0001) and on amorphous Si/SiO2 surfaces display an isotropic magnetic behavior. Coercive field (Hc) depends on microstructure and film thickness. The largest (lowest) Hc value corresponds to the thinner film grown on a single crystal SrTiO3(001) (amorphous Si/SiO2) surface, which present the largest (lowest) strain (crystallinity). Moreover, the coercivity follows an inverse law with film thickness. Our results demonstrate that we can artificially control the magnetic behavior of stoichiometric IR-PLD grown Fe3O4 films by exploiting substrate-induced anisotropy and thickness-controlled coercivity, that might be relevant to incorporate magnetite in future spintronic devices. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

Authors: Paolo Perna, Davide Maccariello, Fernando Ajejas, Ruben Guerrero, Laurence Méchin, Stephane Flament, Jacobo Santamaria, Rodolfo Miranda, Julio Camarero

Abstract: The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of co… ▽ More The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to induce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxial films, at room temperature (RT). By engineering an extrinsic magnetic anisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR) which leads to, at RT, signal changes much larger than the other contributions such as the colossal magnetoresistance (CMR). The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite based devices for the high-resolution low field magnetic sensors or spintronics. △ Less

Submitted 26 November, 2018; originally announced November 2018.

Comments: 10 pages, 6 figures

Journal ref: Adv. Funct. Mater. 2017, 27, 1700664

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Authors: Sandeep Kumar Chaluvadi, Fernando Ajejas, Pasquale Orgiani, Olivier Rousseau, Giovanni Vinai, Aleksandr Yu Petrov, Piero Torelli, Alain Pautrat, Julio Camarero, Paolo Perna, Laurence Mechin

Abstract: Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room… ▽ More Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room temperature pure biaxial magnetic anisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (STO) buffer. In this way, we can avoid unwanted uniaxial magnetic anisotropy contributions that may be detrimental for specific applications. The detailed study of the angular evolution of the magnetization reversal pathways, critical fields (coercivity and switching) allows for disclosing the origin of the magnetic anisotropy, which is magnetocrystalline in nature and shows four-fold symmetry at any temperature. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Journal ref: Appl. Phys. Lett. 113, 052403 (2018)

Unravelling Dzyaloshinskii-Moriya interaction and chiral nature of Graphene/Cobalt interface

Authors: Fernando Ajejas, Adrian Gudín, Ruben Guerrero, Miguel Angel Niño, Stefania Pizzini, Jan Vogel, Manuel Valvidares, Pierluigi Gargiani, Mariona Cabero, Maria Varela, Julio Camarero, Rodolfo Miranda, Paolo Perna

Abstract: A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consump… ▽ More A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed Néel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates. △ Less

Submitted 2 April, 2018; v1 submitted 20 March, 2018; originally announced March 2018.

Comments: 10 pages, 6 figures

Journal ref: Nano Letters 2018

Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects

Authors: P. Perna, F. Ajejas, D. Maccariello, J. L. Fernandez Cuñado, R. Guerrero, M. A. Niño, A. Bollero, R. Miranda, J. Camarero

Abstract: We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the in… ▽ More We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the induced unidirectional magnetic anisotropy at the FM/AFM interface results in strong asymmetric transport behaviors, which are chiral around the magnetization hard-axis direction. Similar asymmetric features are anticipated in other SO-driven phenomena. △ Less

Submitted 23 December, 2017; originally announced December 2017.

Comments: 6 pages, 5 figures

Journal ref: Physical Review B 92, 220422(R) (2015)

Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction

Authors: Fernando Ajejas, Viola Krizakova, Dayane de Souza Chaves, Jan Vogel, Paolo Perna, Ruben Guerrero, Adrian Gudin, Julio Camarero, Stefania Pizzini

Abstract: We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al.… ▽ More We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral Néel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Comments: 5 pages, 4 Figures

Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces

Authors: Emiliano Di Gennaro, Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface st… ▽ More We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion. △ Less

Submitted 22 February, 2014; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 11 pages, 7 figures

Journal ref: Advanced Optical Materials, Volume 1, Issue 11, pages 834-843, November 2013

Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface

Authors: Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Emiliano Di Gennaro, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrT… ▽ More The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed. △ Less

Submitted 22 June, 2012; originally announced June 2012.

Comments: 24 pages, 7 figures, submitted to ACS Nano

Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution

Authors: C. Cantoni, J. Gazquez, F. Miletto Granozio, M. P. Oxley, M. Varela, A. R. Lupini, S. J. Pennycook, C. Aruta, U. Scotti di Uccio, P. Perna, D. Maccariello

Abstract: The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic… ▽ More The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Advanced Materials. Published online on 06/20/2012

Journal ref: Advanced Materials 24, 3952 (2012)

Energy and symmetry of $dd$ excitations in undoped layered cuprates measured by Cu $L_3$ resonant inelastic x-ray scattering

Authors: M. Moretti Sala, V. Bisogni, C. Aruta, G. Balestrino, H. Berger, N. B. Brookes, G. M. de Luca, D. Di. Castro, M. Grioni, M. Guarise, P. G. Medaglia, F. Miletto Granozio, M. Minola, P. Perna, M. Radovic, M. Salluzzo, T. Schmitt, K. J. Zhou, L. Braicovich, G. Ghiringhelli

Abstract: We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for… ▽ More We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for those excitations and used them to fit the experimental data with excellent agreement. By doing so, we were able to determine the energy and symmetry of Cu-3$d$ states for the four systems with unprecedented accuracy and confidence. The values of the effective parameters could be obtained for the single ion crystal field model but not for a simple two-dimensional cluster model. The firm experimental assessment of $dd$ excitation energies carries important consequences for the physics of high $T_c$ superconductors. On one hand, having found that the minimum energy of orbital excitation is always $\geq 1.4$ eV, i.e., well above the mid-infrared spectral range, leaves to magnetic excitations (up to 300 meV) a major role in Cooper pairing in cuprates. On the other hand, it has become possible to study quantitatively the effective influence of $dd$ excitations on the superconducting gap in cuprates. △ Less

Submitted 17 November, 2010; v1 submitted 24 September, 2010; originally announced September 2010.

Comments: 22 pages, 11 figures, 1 table

Journal ref: New J. Phys. 13 (2011) 043026

Magnetic properties of pseudomorphic epitaxial films of Pr_{0.7}Ca_{0.3}MnO_3 under different biaxial tensile stresses

Authors: A. Geddo Lehmann, F. Congiu, N. Lampis, F. Miletto Granozio, P. Perna, M. Radovic, U. Scotti di Uccio

Abstract: In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the pos… ▽ More In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the possible coexistence of antiferromagnetic and ferromagnetic phases. On the contrary, ultrathin films grown on (110) substrates show a robust ferromagnetism, with a strong spontaneous magnetization of about 3.4 mB /Mn atom along the easy axis. On the base of high resolution reciprocal space mapping analyses performed by x-ray diffraction, the different behaviours are discussed in terms of the crystallographic constraints imposed by the epitaxy of Pr0.7Ca0.3MnO3 on SrTiO3. We suggest that for growth on (110) SrTiO3, the tensile strain on the film c-axis, lying within the substrate plane, favours the ferromagnetic phase, possibly by allowing a mixed occupancy and hybridization of both in-plane and out-of-plane eg orbitals. Our data allow to shed some physics of inhomogeneous states in manganites and on the nature of their ferromagnetic insulating state. △ Less

Submitted 19 July, 2010; originally announced July 2010.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 82, 014415 (2010)

Tailoring magnetic anisotropy in epitaxial half metallic La0.7Sr0.3MnO3 thin films

Authors: P. Perna, C. Rodrigo, E. Jiménez, F. J. Teran, L. Méchin, N. Mikuszeit, J. Camarero, R. Miranda

Abstract: We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e. (001), (110) and (1-18). The latter shows step edges oriented parallel to the [110] (in-plane) crystallog… ▽ More We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e. (001), (110) and (1-18). The latter shows step edges oriented parallel to the [110] (in-plane) crystallographic direction. Room temperature high resolution vectorial Kerr magnetometry measurements have been performed at different applied magnetic field directions in the whole angular range. In general, the magnetic properties of the LSMO films can be interpreted with just the uniaxial term with the anisotropy axis given by the film morphology, whereas the strength of this anisotropy depends on both structure and film thickness. In particular, LSMO films grown on nominally flat (110)-oriented STO substrates presents a well defined uniaxial anisotropy originated from the existence of elongated in-plane [001]-oriented structures, whereas LSMO films grown on nominally flat (001)-oriented STO substrates show a weak uniaxial magnetic anisotropy with the easy axis direction aligned parallel to residual substrate step edges. Elongated structures are also found for LSMO films grown on vicinal STO(001) substrates. These films present a well-defined uniaxial magnetic anisotropy with the easy axis lying along the step edges and its strength increases with the LSMO thickness. It is remarkable that this step-induced uniaxial anisotropy has been found for LSMO films up to 120 nm thickness. Our results are promising for engineering novel half-metallic magnetic devices that exploit tailored magnetic anisotropy. △ Less

Submitted 9 March, 2011; v1 submitted 3 May, 2010; originally announced May 2010.

Comments: 10 pages, 10 figures, 1 table

Journal ref: JOURNAL OF APPLIED PHYSICS 110, 013919 (2011)

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3

Authors: Paolo Perna, Davide Maccariello, Milan Radovic, Umberto Scotti di Uccio, Ilaria Pallecchi, Marta Codda, Daniele Marré, Claudia Cantoni, Jaume Gazquez, Maria Varela, Steve Pennycook, Fabio Miletto Granozio

Abstract: We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transiti… ▽ More We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials. △ Less

Submitted 1 October, 2010; v1 submitted 22 January, 2010; originally announced January 2010.

Comments: in press Appl. Phys. Lett. 97, 1 (2010)

Journal ref: APPLIED PHYSICS LETTERS 97, 152111 (2010)

Charge density waves enhance the electronic noise of manganites

Authors: C. Barone, A. Galdi, N. Lampis, L. Maritato, F. Miletto Granozio, S. Pagano, P. Perna, M. Radovic, U. Scotti di Uccio

Abstract: The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the othe… ▽ More The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the other hand, the observations cannot be reconciled with standard models of charge ordering and charge melting. Methodologically, it is proposed to consider noise-spectra analysis as a unique tool for the identification of the transport mechanism in such highly correlated systems. On the basis of the results, the electrical transport is envisaged as one of the most effective ways to understand the nature of the insulating, charge-modulated ground states in manganites. △ Less

Submitted 30 July, 2009; originally announced July 2009.

Comments: 6 two-column pages, 5 figures

Journal ref: Phys. Rev. B 80, 115128 (2009)

Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation

Authors: A. Savoia, D. Paparo, P. Perna, Z. Ristic, M. Salluzzo, F. Miletto Granozio, U. Scotti di Uccio, C. Richter, S. Thiel, J. Mannhart, L. Marrucci

Abstract: The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized int… ▽ More The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer. △ Less

Submitted 4 September, 2009; v1 submitted 21 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. B 80, 075110 (2009)

Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance

Authors: M. Golosovsky, P. Monod, P. K. Muduli, R. C. Budhani, L. Mechin, P. Perna

Abstract: We study magnetic-field-dependent nonresonant microwave absorption and dispersion in thin La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films and show that it originates from the colossal magnetoresistance. We develop the model for magnetoresistance of a thin ferromagnetic film in oblique magnetic field. The model accounts fairly well for our experimental findings, as well as for results of other researchers. W… ▽ More We study magnetic-field-dependent nonresonant microwave absorption and dispersion in thin La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films and show that it originates from the colossal magnetoresistance. We develop the model for magnetoresistance of a thin ferromagnetic film in oblique magnetic field. The model accounts fairly well for our experimental findings, as well as for results of other researchers. We demonstrate that nonresonant microwave absorption is a powerful technique that allows contactless measurement of magnetic properties of thin films, including magnetoresistance, anisotropy field and coercive field. △ Less

Submitted 2 September, 2007; originally announced September 2007.

Comments: 20 pages, 11 figures

Direct Observation of Spectroscopic Inhomogeneities on La0.7Sr0.3MnO3 Thin Films by Scanning Tunnelling Spectroscopy

Authors: R. Di Capua, C. A. Perroni, V. Cataudella, F. Miletto Granozio, P. Perna, M. Salluzzo, U. Scotti Di Uccio, R. Vaglio

Abstract: Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transiti… ▽ More Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transition from a ferromagnetic-metallic to a paramagnetic-insulating state around room temperature, so that the observed spectroscopic features can be interpreted within a phase separation scenario. A quantitative analysis of the observed spectroscopic features is reported pointing out the occurrence of phase modulation and its possible correlation with the properties of the system. △ Less

Submitted 30 April, 2006; originally announced May 2006.

Transport properties in manganite thin films

Authors: S. Mercone, C. A. Perroni, V. Cataudella, C. Adamo, M. Angeloni, C. Aruta, G. De Filippis, F. Miletto, A. Oropallo, P. Perna, A. Yu. Petrov, U. Scotti di Uccio, L. Maritato

Abstract: The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity… ▽ More The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity scales as $T^α$ with $α\simeq 2.5$ for intermediate strengths of disorder supporting the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. For large values of disorder the low-temperature behavior of the resistivity is well described by the law $T^{3}$ characteristic of anomalous single magnon scattering processes, while in the regime of low disorder the $α$ exponent tends to a value near 2. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario also in films doped with strontium ($A=Sr$). △ Less

Submitted 28 October, 2004; originally announced October 2004.

Comments: 5 figures

Journal ref: Physical Review B 71, 064415 (2005)