Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface
Authors:
I. Pallecchi,
M. Codda,
E. Galleani d'Agliano,
D. Marre',
A. D. Caviglia,
N. Reyren,
S. Gariglio,
J. -M. Triscone
Abstract:
The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interf…
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The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces.
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Submitted 9 February, 2010;
originally announced February 2010.
Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3
Authors:
Paolo Perna,
Davide Maccariello,
Milan Radovic,
Umberto Scotti di Uccio,
Ilaria Pallecchi,
Marta Codda,
Daniele Marré,
Claudia Cantoni,
Jaume Gazquez,
Maria Varela,
Steve Pennycook,
Fabio Miletto Granozio
Abstract:
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transiti…
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We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials.
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Submitted 1 October, 2010; v1 submitted 22 January, 2010;
originally announced January 2010.
