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Local structural distortions drive magnetic molecular field in a compositionally complex spinel oxide
Authors:
Rukma Nevgi,
Subha Dey,
Nandana Bhattacharya,
Tinku Dan,
Sujay Chakravarty,
S. D. Kaushik,
Christoph Klewe,
George E. Sterbinsky,
Srimanta Middey
Abstract:
A core challenge in understanding high entropy oxides (HEOs) is how these systems, with five or more cations at a crystallographic site, can withstand local distortions while preserving a uniform structure on a larger scale. We address this for spinel HEO by comparatively examining extended X-ray absorption fine structure (EXAFS) on (Mn$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)Cr$_2$O$_4$ (…
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A core challenge in understanding high entropy oxides (HEOs) is how these systems, with five or more cations at a crystallographic site, can withstand local distortions while preserving a uniform structure on a larger scale. We address this for spinel HEO by comparatively examining extended X-ray absorption fine structure (EXAFS) on (Mn$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)Cr$_2$O$_4$ ($A^5$Cr$_2$O$_4$) and its parent counterparts $A$Cr$_2$O$_4$ ($A$= Mn, Co, Ni, Cu, Zn). Unlike the HEO with rock-salt structure, the element-specific distortions in disordered sublattice go beyond the first neighbor here. Moreover, the tetragonal distortion around the Cu$^{2+}$ ion, known as a textbook example of the Jahn-Teller effect, is highly reduced in $A^5$Cr$_2$O$_4$ compared to CuCr$_2$O$_4$. Despite variations in the A-O bond lengths, the inter-cationic distances remained remarkably similar. This affirms a high level of flexibility in the positioning of oxygen, enabling them to adapt to the overall cubic symmetry. Despite containing multiple magnetic ions, the Curie-Weiss temperature and effective magnetic moments of $A^5$Cr$_2$O$_4$ are similar to those of NiCr$_2$O$_4$. This can be attributed to both materials' comparable local bond lengths around Cr, as evidenced by EXAFS analysis. This study conclusively presents a method for elucidating how local structural distortions influence the macroscopic properties of compositionally complex quantum materials.
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Submitted 3 June, 2024;
originally announced June 2024.
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Strain-dependent Insulating State and Kondo Effect in Epitaxial SrIrO$_{3}$ Films
Authors:
Gaurab Rimal,
Tanzila Tasnim,
Gabriel Calderon Ortiz,
George E. Sterbinsky,
Jinwoo Hwang,
Ryan B. Comes
Abstract:
The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavio…
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The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO$_3$ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.
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Submitted 16 April, 2024;
originally announced April 2024.
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Multiferroic behavior confined by symmetry in EuTiO3 films
Authors:
P. J. Ryan,
G. E. Sterbinsky,
Y. Choi,
J. C. Woicik,
Leyi Zhu,
J. S. Jiang,
J-H. Lee,
D. G. Schlom,
T. Birol,
S. D. Brown,
P. B. J. Thompson,
P. S. Normile,
J. Lang,
J. -W. Kim
Abstract:
We have elucidated the spin, lattice, charge and orbital coupling mechanism underlying the multiferroic character in tensile strained EuTiO3 films. Symmetry determined by oxygen octahedral tilting shapes the hybridization between the Eu 4f and Ti 3d orbitals and this inhibits predicted Ti displacement proper ferroelectricity. Instead, phonon softening emerges at low temperatures within the pseudo-…
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We have elucidated the spin, lattice, charge and orbital coupling mechanism underlying the multiferroic character in tensile strained EuTiO3 films. Symmetry determined by oxygen octahedral tilting shapes the hybridization between the Eu 4f and Ti 3d orbitals and this inhibits predicted Ti displacement proper ferroelectricity. Instead, phonon softening emerges at low temperatures within the pseudo-cube (110) plane, orthogonal to the anticipated ferroelectric polarization symmetry. Additionally, the magnetic anisotropy is determined by orbital distortion through hybridization between the Ti 3d and typically isotropic Eu2+ 4f. This unique scenario demonstrates the critical role symmetry plays in the coupling of order parameters defining multiferroic behaviour.
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Submitted 5 February, 2020;
originally announced February 2020.
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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
Authors:
M. Golalikhani,
Q. Lei,
R. U. Chandrasena,
L. Kasaei,
H. Park,
J. Bai,
P. Orgiani,
J. Ciston,
G. E. Sterbinsky,
D. A. Arena,
P. Shafer,
E. Arenholz,
B. A. Davidson,
A. J. Millis,
A. X. Gray,
X. X. Xi
Abstract:
The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect th…
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The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties in the ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using x-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal insulator transition.
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Submitted 19 June, 2018;
originally announced June 2018.
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Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy
Authors:
Michelle E. Jamer,
George E. Sterbinsky,
Gregory M. Stephen,
Matthew C. DeCapua,
Gabriel Player,
Don Heiman
Abstract:
Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The presen…
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Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.
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Submitted 18 October, 2016;
originally announced October 2016.
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Low-moment ferrimagnetic phase of the Heusler compound Cr2CoAl
Authors:
Michelle E. Jamer,
Luke G. Marshall,
George E. Sterbinsky,
Laura H. Lewis,
Don Heiman
Abstract:
Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing magnetic fields. Previous theoretical studies indicated that Cr2CoAl should form in a stable inverse Heusler lattice due to its low activation energy. Here, stoichi…
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Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing magnetic fields. Previous theoretical studies indicated that Cr2CoAl should form in a stable inverse Heusler lattice due to its low activation energy. Here, stoichiometric Cr2CoAl samples were arc-melted and annealed at varying temperatures, followed by studies of their structural and magnetic properties. High-resolution synchrotron X-ray diffraction revealed a chemically ordered Heusler phase in addition to CoAl and Cr phases. Soft X-ray magnetic circular dichroism revealed that the Cr and Co magnetic moments are antiferromagnetically oriented leading to the observed low magnetic moment in Cr2CoAl.
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Submitted 4 June, 2015;
originally announced June 2015.
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Stoichiometry Dependence of Potential Screening at La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$/SrTiO$_3$ Interfaces
Authors:
C. Weiland,
G. E. Sterbinsky,
A. K. Rumaiz,
C. S. Hellberg,
J. C. Woicik,
S. Zhu,
D. G. Schlom
Abstract:
Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, show…
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Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile between the Al-rich, the La-rich, and stoichiometric films; significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples, which have insulating interfaces. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect driven electronic reconstruction.
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Submitted 10 March, 2015;
originally announced March 2015.
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Antiferromagnetic phase of the gapless semiconductor V3Al
Authors:
M. E. Jamer,
B. A. Assaf,
G. E. Sterbinsky,
D. Arena,
L. H. Lewis,
A. A. Saúl,
G. Radtke,
D. Heiman
Abstract:
Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magneti…
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Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.
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Submitted 25 February, 2015;
originally announced February 2015.
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Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism
Authors:
Michelle E. Jamer,
Badih A. Assaf,
George E. Sterbinsky,
Dario A. Arena,
Don Heiman
Abstract:
Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of an…
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Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.
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Submitted 17 November, 2014; v1 submitted 4 October, 2014;
originally announced October 2014.
