Competing anisotropies in the chiral cubic magnet Co$_8$Zn$_8$Mn$_4$ unveiled by resonant x-ray magnetic scattering
Authors:
Victor Ukleev,
Oleg I. Utesov,
Chen Luo,
Florin Radu,
Sebastian Wintz,
Markus Weigand,
Simone Finizio,
Moritz Winter,
Alexander Tahn,
Bernd Rellinghaus,
Kosuke Karube,
Yoshinori Tokura,
Yasujiro Taguchi,
Jonathan S. White
Abstract:
The cubic $β$-Mn-type alloy Co$_8$Zn$_8$Mn$_4$ is a chiral helimagnet that exhibits a peculiar temperature-dependent behavior in the spiral pitch, which decreases from 130 nm at room temperature to 70 nm below 20 K. Notably, this shortening is also accompanied by a structural transition of the metastable skyrmion texture, transforming from a hexagonal lattice to a square lattice of elongated skyrm…
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The cubic $β$-Mn-type alloy Co$_8$Zn$_8$Mn$_4$ is a chiral helimagnet that exhibits a peculiar temperature-dependent behavior in the spiral pitch, which decreases from 130 nm at room temperature to 70 nm below 20 K. Notably, this shortening is also accompanied by a structural transition of the metastable skyrmion texture, transforming from a hexagonal lattice to a square lattice of elongated skyrmions. The underlying mechanism of these transformations remain unknown, with interactions potentially involved including temperature-dependent Dzyaloshinskii-Moriya interaction, magnetocrystalline anisotropy, and exchange anisotropy. Here, x-ray resonant magnetic small-angle scattering in vectorial magnetic fields was employed to investigate the temperature dependence of the anisotropic properties of the helical phase in Co$_8$Zn$_8$Mn$_4$. Our results reveal quantitatively that the magnitude of the anisotropic exchange interaction increases by a factor of 4 on cooling from room temperature to 20 K, leading to a 5% variation in the helical pitch within the (001) plane at 20 K. While anisotropic exchange interaction contributes to the shortening of the spiral pitch, its magnitude is insufficient to explain the variation in the spiral periodicity from room to low temperatures. Finally, we demonstrate that magnetocrystalline and exchange anisotropies compete, favoring different orientations of the helical vector in the ground state.
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Submitted 25 April, 2024; v1 submitted 22 April, 2024;
originally announced April 2024.
Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
Authors:
Maik Simon,
Boshen Liang,
Dustin Fischer,
Martin Knaut,
Alexander Tahn,
Thomas Mikolajick,
Walter M. Weber
Abstract:
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junct…
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We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.
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Submitted 2 July, 2020;
originally announced July 2020.
