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High-field magnetoelectric coupling and successive magnetic transitions in Mn-doped polar antiferromagnet Ni3TeO6
Authors:
J. H. Zhang,
L. Lin,
C. Dong,
Y. T. Chang,
J. F. Wang,
C. L. Lu,
P. Z. Chen,
W. J. Zhai,
G. Z. Zhou,
L. Huang,
Y. S. Tang,
S. H. Zheng,
M. F. Liu,
X. H. Zhou,
Z. B. Yan,
J. -M. Liu
Abstract:
Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 sing…
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Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 single crystals in high magnetic field (H) up to 52 T. We present a previously unreported weak ferromagnetic behavior appeared in the ab plane below 9.5 K in addition to the incommensurate helical and commensurate collinear antiferromagnetic states. In the low-field region, a spin-flop type metamagnetic transition without any hysteresis occurs at Hc1 for H // c, while another metamagnetic transition accompanied with a change in electric polarization is observed at Hc2 in the high-field region both for H // c and H // ab above 30 K, which can be attributed to the sudden rotation of magnetic moments at Ni2 sites. The ME measurements reveal that a first-order ME effect is observed in the low-T and low-H regions, while a second-order ME coupling term appears above 30 K in the magnetic field range of Hc1 < H < Hc2 for H // c and H < Hc2 for H // ab, both becoming significant with increasing temperature. Eventually, they are dominated by the second-order ME effect near the antiferromagnetic transition temperature. The present work demonstrates that Ni3-xMnxTeO6 is an exotic magnetoelectric material compared with Ni3TeO6 and its derivatives, thereby providing insights to better understand the magnetism and ME coupling in Ni3TeO6 and its derivatives.
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Submitted 29 May, 2024; v1 submitted 24 May, 2024;
originally announced May 2024.
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Antiferromagnetic multi-level memristor using linear magnetoelectricity
Authors:
Y. T. Chang,
J. F. Wang,
W. Wang,
C. B. Liu,
B. You,
M. F. Liu,
S. H. Zheng,
M. Y. Shi,
C. L. Lu,
J. -M. Liu
Abstract:
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor is recognized as a very promising circuit element to tackle the barriers, because of its fascinating advantages in imitating neural network of human brain, and…
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The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor is recognized as a very promising circuit element to tackle the barriers, because of its fascinating advantages in imitating neural network of human brain, and thus realizing in-memory computing. However, there exist two core and fundamental issues: energy efficiency and accuracy, owing to the electric current operation of traditional memristors. In the present work, we demonstrate a new type of memristor, i.e. charge q and magnetic flux φ space memristor, enabled by linear magnetoelectricity of Co4Nb2O9. The memory states show distinctly linear magnetoelectric coefficients with a large ratio of about 10, ensuing exceptional accuracy of related devices. The present q-φ type memristor can be manipulated by magnetic and electric fields without involving electric current, paving the way to develop ultralow-energy-consuming devices. In the meanwhile, it is worth to mention that Co4Nb2O9 hosts an intrinsic compensated antiferromagnetic structure, which suggests interesting possibility of further integrating the unique merits of antiferromagnetic spintronics such as ultrahigh density and ultrafast switching. Linear magnetoelectricity is proposed to essential to the q-φ type memristor, which would be accessible in a broad class of multiferroics and other magnetoelectric materials such as topological insulators. Our findings could therefore advance memristors towards new levels of functionality.
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Submitted 25 October, 2021;
originally announced October 2021.
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Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures
Authors:
Ke Huang,
Tao Wang,
Mengjia Jin,
Liang Wu,
Junyao Floria Wang,
Shengyao Li,
Dong-chen Qi,
Shuying Cheng,
Yangyang Li,
Jingsheng Chen,
Xiaozhong He,
Changjian Li,
Stephen J. Pennycook,
X. Renshaw Wang
Abstract:
Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-…
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Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-insulator transition. Here, we report an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy were formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ~6 times higher than its conventional phase. Our study paves a way to empower conventional materials in existing electronics and induce novel electronic phases.
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Submitted 19 April, 2021;
originally announced April 2021.
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Magnetism study on a triangular lattice antiferromagnet Cu$_2$(OH)$_3$Br
Authors:
Z Y Zhao,
H L Che,
R Chen,
J F Wang,
X F Sun,
Z Z He
Abstract:
Magnetism of Cu$_2$(OH)$_3$Br single crystals based on a triangular lattice is studied by means of magnetic susceptibility, pulsed-field magnetization, and specific heat measurements. There are two inequivalent Cu$^{2+}$ sites in an asymmetric unit. Both Cu$^{2+}$ sublattices undergo a long-range antiferromagnetic (AFM) order at $T\rm_N$ = 9.3 K. Upon cooling, an anisotropy crossover from Heisenbe…
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Magnetism of Cu$_2$(OH)$_3$Br single crystals based on a triangular lattice is studied by means of magnetic susceptibility, pulsed-field magnetization, and specific heat measurements. There are two inequivalent Cu$^{2+}$ sites in an asymmetric unit. Both Cu$^{2+}$ sublattices undergo a long-range antiferromagnetic (AFM) order at $T\rm_N$ = 9.3 K. Upon cooling, an anisotropy crossover from Heisenberg to $XY$ behavior is observed below 7.5 K from the anisotropic magnetic susceptibility. The magnetic field applied within the $XY$ plane induces a spin-flop transition of Cu$^{2+}$ ions between 4.9 T and 5.3 T. With further increasing fields, the magnetic moment is gradually increased but is only about half of the saturation of a Cu$^{2+}$ ion even in 30 T. The individual reorientation of the inequivalent Cu$^{2+}$ spins under field is proposed to account for the magnetization behavior. The observed spin-flop transition is likely related to one Cu site, and the AFM coupling among the rest Cu spins is so strong that the 30-T field cannot overcome the anisotropy. The temperature dependence of the magnetic specific heat, which is well described by a sum of two gapped AFM contributions, is a further support for the proposed scenario.
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Submitted 7 April, 2019;
originally announced April 2019.
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Magnetism study on a frustration-free spatially anisotropic $S$ = 1 square lattice antiferromagnet Ni[SC(NH$_2$)$_2$]$_6$Br$_2$
Authors:
X. Zhao,
Z. Y. Zhao,
L. M. Chen,
X. Rao,
H. L. Che,
L. G. Chu,
H. D. Zhou,
L. S. Ling,
J. F. Wang,
X. F. Sun
Abstract:
Magnetism of the $S$ = 1 Heisenberg antiferromagnets on the spatially anisotropic square lattice has been scarcely explored. Here we report a study of the magnetism, specific heat, and thermal conductivity on Ni[SC(NH$_2$)$_2$]$_6$Br$_2$ (DHN) single crystals. Ni$^{2+}$ ions feature an $S$ = 1 rectangular lattice in the $bc$ plane, which can be viewed as an unfrustrated spatially anisotropic squar…
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Magnetism of the $S$ = 1 Heisenberg antiferromagnets on the spatially anisotropic square lattice has been scarcely explored. Here we report a study of the magnetism, specific heat, and thermal conductivity on Ni[SC(NH$_2$)$_2$]$_6$Br$_2$ (DHN) single crystals. Ni$^{2+}$ ions feature an $S$ = 1 rectangular lattice in the $bc$ plane, which can be viewed as an unfrustrated spatially anisotropic square lattice. A long-range antiferromagnetic order is developed at $T \rm_N =$ 2.23 K. Below $T\rm_N$, an upturn is observed in the $b$-axis magnetic susceptibility and the resultant minimum might be an indication for the $XY$ anisotropy in the ordered state. A gapped spin-wave dispersion is confirmed from the temperature dependence of the magnetic specific heat. Anisotropic temperature-field phase diagrams are mapped out and possible magnetic structures are proposed.
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Submitted 6 March, 2019;
originally announced March 2019.
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Magnetization, specific heat, and thermal conductivity of hexagonal ErMnO$_3$ single crystals
Authors:
J. D. Song. C. Fan,
Z. Y. Zhao,
F. B. Zhang,
J. Y. Zhao,
X. G. Liu,
X. Zhao,
Y. J. Liu,
J. F. Wang,
X. F. Sun
Abstract:
We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transitions at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conduc…
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We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transitions at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conductivity ($κ$), a clear dip-like feature appears in $κ(H)$ isotherm at 1--1.25 T for $H \parallel ab$; while in the case of $H \parallel c$, a step-like increase is observed at 0.5--0.8 T. The transition fields in $κ(H)$ are in good agreement with those obtained from magnetization, and the anomaly of $κ$ can be understood by a spin-phonon scattering scenario. The natures of magnetic structures and corresponding field-induced transitions at low temperatures are discussed.
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Submitted 9 November, 2017;
originally announced November 2017.
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Covariant gaussian approximation in Ginzburg - Landau model
Authors:
J. F. Wang,
Dingping Li,
H. C. Kao,
B. Rosenstein
Abstract:
Condensed matter systems undergoing second order transition away from the critical fluctuation region are usually described sufficiently well by the mean field approximation. The critical fluctuation region, determined by the Ginzburg criterion, $\left \vert T/T_{c}-1\right \vert \ll Gi$, is narrow even in high $T_{c}$ superconductors and has universal features well captured by the renormalization…
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Condensed matter systems undergoing second order transition away from the critical fluctuation region are usually described sufficiently well by the mean field approximation. The critical fluctuation region, determined by the Ginzburg criterion, $\left \vert T/T_{c}-1\right \vert \ll Gi$, is narrow even in high $T_{c}$ superconductors and has universal features well captured by the renormalization group method. However recent experiments on magnetization, conductivity and Nernst effect suggest that fluctuations effects are large in a wider region both above and below $T_{c}$. In particular some "pseudogap" phenomena and strong renormalization of the mean field critical temperature $T_{mf}$ can be interpreted as strong fluctuations effects that are nonperturbative (cannot be accounted for by "gaussian fluctuations"). The physics in a broader region therefore requires more accurate approach. Self consistent methods are generally "non - conserving" in the sense that the Ward identities are not obeyed. This is especially detrimental in the symmetry broken phase where, for example, Goldstone bosons become massive. Covariant gaussian approximation remedies these problems. The Green's functions obey all the Ward identities and describe the fluctuations much better. The results for the order parameter correlator and magnetic penetration depth of the Ginzburg - Landau model of superconductivity are compared with both Monte Carlo simulations and experiments in high $T_{c}$ cuprates.
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Submitted 29 December, 2016;
originally announced December 2016.
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Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
Authors:
U. Jahn,
M. Musolino,
J. Lähnemann,
P. Dogan,
S. Fernández Garrido,
J. F. Wang,
K. Xu,
D. Cai,
L. F. Bian,
X. J. Gong,
H. Yang
Abstract:
Several ten $μ$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in cathodolum…
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Several ten $μ$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features allow for an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, a silicon incorporation into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in a first case, the epitaxy is dominated by the formation of slowly growing facets, while in a second case, the epitaxy proceeds directly along the c-axis.
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Submitted 10 May, 2016;
originally announced May 2016.
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Dirac vs. Weyl in topological insulators: Adler-Bell-Jackiw anomaly in transport phenomena
Authors:
Heon-Jung Kim,
Ki-Seok Kim,
J. F. Wang,
M. Sasaki,
N. Satoh,
A. Ohnishi,
M. Kitaura,
M. Yang,
L. Li
Abstract:
Dirac metals (gapless semi-conductors) are believed to turn into Weyl metals when perturbations, which break either time reversal symmetry or inversion symmetry, are employed. However, no experimental evidence has been reported for the existence of Weyl fermions in three dimensions. Applying magnetic fields near the topological phase transition from a topological insulator to a band insulator in B…
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Dirac metals (gapless semi-conductors) are believed to turn into Weyl metals when perturbations, which break either time reversal symmetry or inversion symmetry, are employed. However, no experimental evidence has been reported for the existence of Weyl fermions in three dimensions. Applying magnetic fields near the topological phase transition from a topological insulator to a band insulator in Bi1-xSbx, we observe not only the weak anti-localization phenomenon in magnetoconductivity near zero magnetic fields (B < 0.4 T) but also its upturn above 0.4 T only for E // B. This incompatible coexistence between weak anti-localization and negative magnetoresistivity is attributed to the Adler-Bell-Jackiw anomaly (topological E B term) in the presence of weak anti-localization corrections.
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Submitted 26 July, 2013;
originally announced July 2013.
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Enhanced low field magnetoresistance of Fe3O4 nano-sphere compact
Authors:
P. Y. Song,
J. F. Wang,
C. P. Chen,
H. Deng,
Y. D. Li
Abstract:
Unusually large low field magetoresistance (LFMR), ~ 10 %, at 300 K has been observed with the sample of mono-dispersed Fe3O4 magnetite nanospheres, ~ 200 nm, compactly cold-pressed and sintered at 800 C. A detailed analysis on the transport and magnetic measurements indicates that the electron conduction is dominated by the spin-dependent scattering or tunneling at the grain boundaries. At low…
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Unusually large low field magetoresistance (LFMR), ~ 10 %, at 300 K has been observed with the sample of mono-dispersed Fe3O4 magnetite nanospheres, ~ 200 nm, compactly cold-pressed and sintered at 800 C. A detailed analysis on the transport and magnetic measurements indicates that the electron conduction is dominated by the spin-dependent scattering or tunneling at the grain boundaries. At low temperature, 140 K and 100 K near the Verwey transition, ~ 115 K, the LFMR (below 2 kOe) does not show any sign of dependence on the transition, and does not follow the variation of magnetization to reach the saturation region either. On the other hand, at 300 K, the MR saturates fast with the magnetization below 2 kOe. This temperature dependent property in LFMR is very likely attributed to the scattering or tunneling of the conduction electron passing through the grain boundary layer with spin disordered state.
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Submitted 22 June, 2006;
originally announced June 2006.
