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Computational Search for Two-Dimensional Photocatalysts
Authors:
Vei Wang,
Gang Tang,
Ya-Chao Liu,
Yun-Ye Liang,
Hiroshi Mizuseki,
Yoshiyuki Kawazoe,
Wen-Tong Geng
Abstract:
To overcome current serious energy and environmental issues, photocatalytic water splitting holds great promise because it requires only solar energy as an energy input to produce hydrogen. Two-dimensional (2D) semiconductors and heterostructures possess several inherent advantages which are more suitable for boosting solar energy than their bulk counterparts. In this work, by performing high-thro…
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To overcome current serious energy and environmental issues, photocatalytic water splitting holds great promise because it requires only solar energy as an energy input to produce hydrogen. Two-dimensional (2D) semiconductors and heterostructures possess several inherent advantages which are more suitable for boosting solar energy than their bulk counterparts. In this work, by performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we first provided the periodic table of band alignment type for van der Waals heterostructures when packing any two of the 260 semiconductor monolayers obtained from our 2D semiconductor database (2DSdb) (https://materialsdb.cn/2dsdb/index.html). Based on the rules of thumb for photocatalytic water splitting, we have further screened dozens of potential semiconductors and thousands of heterostructures which are promising for photocatalytic water splitting. The resulting database would provide a useful guidance for experimentalists to design suitable 2D vdWHs and photocatalysts according to desired applications.
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Submitted 9 October, 2022;
originally announced October 2022.
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Group Theory Analysis of Phonons in Monolayer Chromium Trihalides and Their Janus Structures
Authors:
Y. C. Liu,
H. B. Niu,
J. B. Lin,
V. Wang
Abstract:
A contrastive investigation of the symmetry aspects of phonons in monolayer chromium trihalides and their Janus structures Y$_3$-Cr$_2$-X$_3$ (X, Y = F, Cl, Br, I) by group theory is presented. We first classify all phonons at the Brillouin-zone center ($Γ$) into the irreducible representation. Then the infrared and Raman activity of optic phonons, Raman tensors, and the possible polarization assi…
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A contrastive investigation of the symmetry aspects of phonons in monolayer chromium trihalides and their Janus structures Y$_3$-Cr$_2$-X$_3$ (X, Y = F, Cl, Br, I) by group theory is presented. We first classify all phonons at the Brillouin-zone center ($Γ$) into the irreducible representation. Then the infrared and Raman activity of optic phonons, Raman tensors, and the possible polarization assignments of R active phonons are predicted. Base on these results, we clarify the the discrepancy about the Raman activity o optic modes in monolayer CrI$_3$. Besides, we find that the Raman and infrared spectra for X$_3$-Cr$_2$-X$_3$ are exclusive, whereas that for Janus Y$_3$-Cr$_2$-X$_3$ are coincident. This distinction is vital for optic spectra identification of Janus Y$_3$-Cr$_2$-X$_3$ monolayer from X$_3$-Cr$_2$-X$_3$ monolayer. In addition, we derive the symmetry-matched phonon eigenfunctions and corresponding schematic representations of the eigenvectors for both F$_3$-Cr$_2$-I$_3$ and I$_3$-Cr$_2$-I$_3$ monolayer, which demonstrate intuitively the origin of phonon chirality and magnetism. At last, our analysis indicates that the spin-phonon coupling, the magneto-optical effect of infrared and Raman active phonons, and phonon chirality should be observed in Janus Y$_3$-Cr$_2$-X$_3$ monolayer as that and even easier than that in X$_3$-Cr$_2$-X$_3$ monolayer. Our work provides a detailed guiding map for experimental characterization of Y$_3$-Cr$_2$-X$_3$ monolayer, and also reveals important effects of optic phonons in Janus Y$_3$-Cr$_2$-X$_3$ monolayer.
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Submitted 28 July, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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Fermi arcs of topological surface states in multi-Weyl Semimetals
Authors:
Y. C. Liu,
V. Wang,
J. B. Lin,
J. Nara
Abstract:
The Fermi arcs of topological surface states in the three-dimensional multi-Weyl semimetals on surfaces by a continuum model are investigated systematically. We calculated analytically the energy spectra and wave function for bulk quadratic- and cubic-Weyl semimetal with a single Weyl point. The Fermi arcs of topological surface states in Weyl semimetals with single- and double-pair Weyl points ar…
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The Fermi arcs of topological surface states in the three-dimensional multi-Weyl semimetals on surfaces by a continuum model are investigated systematically. We calculated analytically the energy spectra and wave function for bulk quadratic- and cubic-Weyl semimetal with a single Weyl point. The Fermi arcs of topological surface states in Weyl semimetals with single- and double-pair Weyl points are investigated systematically. The evolution of the Fermi arcs of surface states variating with the boundary parameter is investigated and the topological Lifshitz phase transition of the Fermi arc connection is clearly demonstrated. Besides, the boundary condition for the double parallel flat boundary of Weyl semimetal is deduced with a Lagrangian formalism.
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Submitted 2 November, 2021; v1 submitted 23 July, 2021;
originally announced July 2021.
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Angle-dependence of interlayer coupling in twisted transition metal dichalcogenide heterobilayers
Authors:
W. T. Geng,
V. Wang,
J. B. Lin,
T. Ohno,
J. Nara
Abstract:
We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing well the interlayer steric effect. The binding energy is found to be a Gaussian-like function of twist angle. The resistance to rotation, an analogue to the inter…
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We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing well the interlayer steric effect. The binding energy is found to be a Gaussian-like function of twist angle. The resistance to rotation, an analogue to the interlayer sliding barrier, can also be defined accordingly. In sharp contrast to the case of MoS2 homobilayer, here the energy band gap reduces with increasing twist angle. We find a remarkable interlayer charge transfer from MoTe2 to MoS2 which enlarges the band gap, but this charge transfer weakens with greater twisting and interlayer overlapping degree. Our discovery provides a solid basis in twistronics and practical instruction in band structure engineering of van der Waals heterostructures.
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Submitted 5 October, 2020; v1 submitted 2 October, 2020;
originally announced October 2020.
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Orbital-Energy Splitting in Anion Ordered Ruddlesden-Popper Halide Perovskites for Tunable Optoelectronic Applications
Authors:
Gang Tang,
Vei Wang,
Yajun Zhang,
Philippe Ghosez,
Jiawang Hong
Abstract:
The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations…
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The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations and taking anion ordered Ruddlesden-Popper (RP) phase halide perovskites Cs$_{n+1}$Ge$_n$I$_{n+1}$Cl$_{2n}$ as an example, we demonstrate how to rationally optimize the optoelectronic properties (e.g., band gap, transition dipole matrix elements, carrier effective masses, band width) through a simple band structure parameter. Our results show that reducing the splitting energy $|Δc|$ of p orbitals of B-site atom can effectively reduce the band gap and carrier effective masses while greatly improving the optical absorption in the visible region. Thereby, the orbital-property relationship with $Δc$ is well established through biaxial compressive strain. Finally, it is shown that this approach can be reasonably extended to several other non-cubic halide perovskites with similar p orbitals characteristics at the conduction band edges. Therefore, we believe that our proposed orbital engineering approach provides atomic-level guidance for understanding and optimizing the device performance of layered perovskite solar cells.
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Submitted 28 May, 2020;
originally announced May 2020.
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Moiré potential, lattice corrugation, and band gap spatial variation in a twist-free MoS2/MoTe2 heterobilayer
Authors:
W. T. Geng,
V. Wang,
Y. C. Liu,
T. Ohno,
J. Nara
Abstract:
To have a fully ab initio description of the Moiré pattern in a transition metal dichalcogenide heterobilayer, we have carried out density functional theory calculations, taking accounts of both atomic registry in and the lattice corrugation out of the monolayers, on a MoTe2(9*9)/MoS2(10*10) system which has a moderate size of superlattice larger than an exciton yet not large enough to justify a c…
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To have a fully ab initio description of the Moiré pattern in a transition metal dichalcogenide heterobilayer, we have carried out density functional theory calculations, taking accounts of both atomic registry in and the lattice corrugation out of the monolayers, on a MoTe2(9*9)/MoS2(10*10) system which has a moderate size of superlattice larger than an exciton yet not large enough to justify a continuum model treatment. We find that the local potential in the midplane of the bilayer displays a conspicuous Moiré pattern. It further leads us to reveal that the variation of the average local potential near Mo atoms in both MoTe2 and MoS2 layers make intralayer Moiré potentials. They are the result of mutual modulation and correlate directly with the spatial variation of the valence band maximum and conduction band minimum. The interlayer Moiré potential, defined as the difference between the two intralayer Moiré potentials, has a depth of 0.11 eV and changes roughly in proportion to the band gap variation in the Moiré cell, which has an amplitude of 0.04 eV. We find the lattice corrugation is significant in both MoTe2 (0.30Å) and MoS2 (0.77Å) layers, yet its effect on the electronic properties is marginal. The wrinkling of the MoTe2/MoS2 bilayer enhances the spatial variation of the local band gap by 5 meV, while its influence on the global band gap is within 1 meV. A simple intralayer band-coupling model is proposed to understand the correlation of Moiré potential and spatial variation of the band gap.
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Submitted 31 January, 2020;
originally announced January 2020.
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Modulation of Nearly Free Electron States in Hydroxyl-Functionalized MXenes: A First-Principles Study
Authors:
Jiaqi Zhou,
Mohammad Khazaei,
Ahmad Ranjbar,
Vei Wang,
Thomas D. Kühne,
Kaoru Ohno,
Yoshiyuki Kawazoe,
Yunye Liang
Abstract:
The transition metal carbides (namely MXenes) and their functionalized derivatives exhibit various physical and chemical characteristics and offer many potential applications in electronic devices and sensors. Using density functional theory (DFT), it is revealed that the nearly free electron (NFE) states are near the Fermi levels in hydroxyl (OH) functionalized MXenes. Most of the OH-terminated M…
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The transition metal carbides (namely MXenes) and their functionalized derivatives exhibit various physical and chemical characteristics and offer many potential applications in electronic devices and sensors. Using density functional theory (DFT), it is revealed that the nearly free electron (NFE) states are near the Fermi levels in hydroxyl (OH) functionalized MXenes. Most of the OH-terminated MXene are metallic, but some of them, e.g. Sc2C(OH)2, are semiconductors and the NFE states are conduction bands. In this paper, to investigate the NFE states in MXenes, an attractive image-potential well model is adopted. Compared the solutions of this model with the DFT calculations, it is found that due to the overlap of spatially extensive wave functions of NFE states and their hybridization between the artificial neighboring layers imposed by the periodical boundary conditions (PBCs), the DFT results represent the properties of multiple layers, intrinsically. Based on the DFT calculations, it is found that the energy gap widths are affected by the interlayer distances. We address that the energetics of the NFE states can be modulated by the external electric fields and it is possible to convert semiconducting MXenes into metals. This band-gap manipulation makes the OH-terminated semiconducting MXenes an excellent candidate for electronic switch applications. Finally, using a set of electron transport calculations, I-V characteristics of Sc2C(OH)2 devices are investigated with the gate voltages.
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Submitted 4 March, 2020; v1 submitted 6 December, 2019;
originally announced December 2019.
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VASPKIT: A User-friendly Interface Facilitating High-throughput Computing and Analysis Using VASP Code
Authors:
Vei Wang,
Nan Xu,
Jin Cheng Liu,
Gang Tang,
Wen-Tong Geng
Abstract:
We present the VASPKIT, a command-line program that aims at providing a powerful and user-friendly interface to perform high-throughput analysis of a variety of material properties from the raw data produced by the VASP code. It consists of mainly the pre- and post-processing modules. The former module is designed to prepare and manipulate input files such as the necessary input files generation,…
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We present the VASPKIT, a command-line program that aims at providing a powerful and user-friendly interface to perform high-throughput analysis of a variety of material properties from the raw data produced by the VASP code. It consists of mainly the pre- and post-processing modules. The former module is designed to prepare and manipulate input files such as the necessary input files generation, symmetry analysis, supercell transformation, k-path generation for a given crystal structure. The latter module is designed to extract and analyze the raw data about elastic mechanics, electronic structure, charge density, electrostatic potential, linear optical coefficients, wave function plots in real space, and etc. This program can run conveniently in either interactive user interface or command line mode. The command-line options allow the user to perform high-throughput calculations together with bash scripts. This article gives an overview of the program structure and presents illustrative examples for some of its usages. The program can run on Linux, MacOS, and Windows platforms. The executable versions of VASPKIT and the related examples, together with the tutorials, are available in its official website vaspkit.com.
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Submitted 5 May, 2021; v1 submitted 22 August, 2019;
originally announced August 2019.
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Current enhancement in solid-state nanopores depends on three-dimensional DNA structure
Authors:
Vivian Wang,
Niklas Ermann,
Ulrich F. Keyser
Abstract:
The translocation of double-stranded DNA through a solid-state nanopore may either decrease or increase the ionic current depending on the ionic concentration of the surrounding solution. Below a certain crossover ionic concentration, the current change inverts from a current blockade to current enhancement. In this paper, we show that the crossover concentration for bundled DNA nanostructures com…
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The translocation of double-stranded DNA through a solid-state nanopore may either decrease or increase the ionic current depending on the ionic concentration of the surrounding solution. Below a certain crossover ionic concentration, the current change inverts from a current blockade to current enhancement. In this paper, we show that the crossover concentration for bundled DNA nanostructures composed of multiple connected DNA double-helices is lower than that of double-stranded DNA. Our measurements suggest that counterion mobility in the vicinity of DNA is reduced depending on the three-dimensional structure of the molecule. We further demonstrate that introducing neutral polymers such as polyethylene glycol into the measurement solution reduces electroosmotic outflow from the nanopore, allowing translocation of large DNA structures at low salt concentrations. Our experiments contribute to an improved understanding of ion transport in confined DNA environments, which is critical for the development of nanopore sensing techniques as well as synthetic membrane channels. Our salt-dependent measurements of model DNA nanostructures will guide the development of computational models of DNA translocation through nanopores.
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Submitted 31 May, 2019;
originally announced May 2019.
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Electronic structures of iMAX phases and their two-dimensional derivatives: A family of piezoelectric materials
Authors:
Mohammad Khazaei,
Vei Wang,
Cem Sevik,
Ahmad Ranjbar,
Masao Arai,
Seiji Yunoki
Abstract:
Recently, a group of MAX phases, (Mo$_{2/3}$Y$_{1/3}$)$_2$AlC, (Mo$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Y$_{1/3}$)$_2$AlC, and (V$_{2/3}$Zr$_{1/3}$)$_2$AlC, with in-plane ordered double transition metals, named iMAX phases, have been synthesized. Experimentally, some of these MAX phases can be chemically exfoliated into two-dimensional (2D) single- or multilayered tra…
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Recently, a group of MAX phases, (Mo$_{2/3}$Y$_{1/3}$)$_2$AlC, (Mo$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Y$_{1/3}$)$_2$AlC, and (V$_{2/3}$Zr$_{1/3}$)$_2$AlC, with in-plane ordered double transition metals, named iMAX phases, have been synthesized. Experimentally, some of these MAX phases can be chemically exfoliated into two-dimensional (2D) single- or multilayered transition metal carbides, so-called MXenes. Accordingly, the 2D nanostructures derived from iMAX phases are named iMXenes. Here, we investigate the structural stabilities and electronic structures of the experimentally discovered iMAX phases and their possible iMXene derivatives. We show that the iMAX phases and their pristine, F, or OH-terminated iMXenes are metallic. However, upon O termination, (Mo$_{2/3}$Y$_{1/3}$)$_2$C, (Mo$_{2/3}$Sc$_{1/3}$)$_2$C, (W$_{2/3}$Y$_{1/3}$)$_2$C, and (W$_{2/3}$Sc$_{1/3}$)$_2$C iMXenes turn into semiconductors. Owing to the absence of centrosymmetry, the semiconducting iMXenes may find applications in piezoelectricity. Our calculations reveal that the semiconducting iMXenes possess giant piezoelectric coefficients as large as 45$\times10^{-10}$~C/m.
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Submitted 23 June, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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High-Throughput Computational Screening of Two-Dimensional Semiconductors
Authors:
Vei Wang,
Gang Tang,
Ren-Tao Wang,
Ya-Chao Liu,
Hiroshi Mizuseki,
Yoshiyuki Kawazoe,
Jun Nara,
Wen-Tong Geng
Abstract:
By performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we have screened 74 direct- and 185 indirect-gap two dimensional (2D) nonmagnetic semiconductors from near 1000 monolayers according to the criteria for energetic, thermodynamic, mechanical, dynamic and thermal stabilities, and conductivity type. We present the calculated…
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By performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we have screened 74 direct- and 185 indirect-gap two dimensional (2D) nonmagnetic semiconductors from near 1000 monolayers according to the criteria for energetic, thermodynamic, mechanical, dynamic and thermal stabilities, and conductivity type. We present the calculated lattice constants, simulated scanning tunnel microscopy, formation energy, Young's modulus, Poisson's ratio, shear modulus, anisotropic effective mass, band structure, band gap, ionization energy, and electron affinity for each candidate meeting our criteria. The resulting 2D semiconductor database (2DSdb) can be accessed via the website https://materialsdb.cn/2dsdb/index.html. The 2DSdb provides an ideal platform for computational modeling and design of new 2D semiconductors and heterostructures in photocatalysis, nanoscale devices, and other applications. Further, a linear fitting model was proposed to evaluate band gap, ionization energy and electron affinity of semiconductor from the density functional theory (DFT) calculated data as initial input. This model can be as precise as hybrid DFT but with much lower computational cost.
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Submitted 28 September, 2022; v1 submitted 11 June, 2018;
originally announced June 2018.
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Promoting single-file DNA translocations through nanopores using electroosmotic flow
Authors:
Niklas Ermann,
Nikita Hanikel,
Vivian Wang,
Kaikai Chen,
Ulrich F. Keyser
Abstract:
Double-stranded DNA translocates through sufficiently large nanopores either in a linear, single-file fashion or in a folded hairpin conformation when captured somewhere along its length. We show that the folding state of DNA can be controlled by changing the electrolyte concentration, pH and PEG content of the measurement buffer. At 1 M LiCl or 0.35 M KCl in neutral pH, single-file translocations…
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Double-stranded DNA translocates through sufficiently large nanopores either in a linear, single-file fashion or in a folded hairpin conformation when captured somewhere along its length. We show that the folding state of DNA can be controlled by changing the electrolyte concentration, pH and PEG content of the measurement buffer. At 1 M LiCl or 0.35 M KCl in neutral pH, single-file translocations make up more than 90% of the total. We attribute the effect to the onset of electroosmotic flow from the pore at low ionic strength. Our hypothesis on the critical role of flows is supported by the preferred orientation of entry of a strand that has been folded into a multi-helix structure at one end. Control over DNA folding is critical for nanopore sensing approaches that use modifications along a DNA strand and the associated secondary current drops to encode information.
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Submitted 27 March, 2018;
originally announced March 2018.
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Tunable Band Gaps of In$_x$Ga$_{1-x}$N Alloys: From Bulk to Two-Dimensional Limit
Authors:
V. Wang,
Z. Q. Wu,
Y. Kawazoe,
W. T. Geng
Abstract:
Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated structural parameters, mixing enthalpies, and band gaps of buckled and planar few-layer In$_x$Ga$_{1-x}$N alloys. We predict that the free-standing buckled phases are less stable than the planar ones. However, with hydrogen passivation, the buckled In$_x$Ga$_{1-x}$N alloys b…
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Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated structural parameters, mixing enthalpies, and band gaps of buckled and planar few-layer In$_x$Ga$_{1-x}$N alloys. We predict that the free-standing buckled phases are less stable than the planar ones. However, with hydrogen passivation, the buckled In$_x$Ga$_{1-x}$N alloys become more favorable. Their band gaps can be tuned from 6 eV to 1 eV with preservation of direct band gap and well-defined Bloch character, making them promising candidate materials for future light-emitting applications. Unlike their bulk counterparts, the phase separation could be suppressed in these two-dimensional systems due to reduced geometrical constraints. In contrast, the disordered planar thin films undergo severe lattice distortion, nearly losing the Bloch character for valence bands; whereas the ordered planar ones maintain the Bloch character yet with the highest mixing enthalpies.
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Submitted 12 December, 2017;
originally announced December 2017.
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First-principles Study on Structural, Thermal, Mechanical and Dynamic Stability of T'-MoS$_2$
Authors:
Y. C. Liu,
V. Wang,
M. G. Xia,
S. L. Zhang
Abstract:
Using first-principles density functional theory calculations, we investigate the structure, stability, optical modes and electronic band gap of a distorted tetragonal MoS$_2$ monolayer (T'-MoS$_2$). Our simulated scanning tunnel microscopy (STM) images of T'-MoS$_2$ are dramatically similar with those STM images which were identified as K$_{x}$(H$_{2}$O)$_{y}$MoS$_{2}$ from a previous experimenta…
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Using first-principles density functional theory calculations, we investigate the structure, stability, optical modes and electronic band gap of a distorted tetragonal MoS$_2$ monolayer (T'-MoS$_2$). Our simulated scanning tunnel microscopy (STM) images of T'-MoS$_2$ are dramatically similar with those STM images which were identified as K$_{x}$(H$_{2}$O)$_{y}$MoS$_{2}$ from a previous experimental study. This similarity suggests that T'-MoS$_2$ might have already been observed in experiment but was unexpectedly misidentified. Furthermore, we verify the stability of T'-MoS$_2$ from thermal, mechanical and dynamic aspects, by \emph{ab initio} molecular dynamics simulation, elastic constants evaluation and phonon band structure calculation based on density functional perturbation theory, respectively. In addition, we calculate the eigenfrequencies and eigenvectors of the optical modes of T'-MoS$_2$ at $Γ$ point and distinguish their Raman and infrared activity by pointing out their irreducible representations using group theory; at the same time, we compare the Raman modes of T'-MoS$_2$ with those of H-MoS$_2$ and T-MoS$_2$. Our results provide a useful guidance for further experimental identification and characterization of T'-MoS$_2$.
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Submitted 2 August, 2017; v1 submitted 18 August, 2016;
originally announced August 2016.
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Lattice Defects and the Mechanical Anisotropy of Borophene
Authors:
V. Wang,
W. T. Geng
Abstract:
Using density functional theory combined with a semi-empirical van der Waals dispersion correction, we have investigated the stability of lattice defects including boron vacancy, substitutional and interstitial X (X=H, C, B, N, O) and $Σ$5 tilt grain boundaries in borophene and their influence on the anisotropic mechanical properties of this two-dimensional system. The pristine borophene has signi…
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Using density functional theory combined with a semi-empirical van der Waals dispersion correction, we have investigated the stability of lattice defects including boron vacancy, substitutional and interstitial X (X=H, C, B, N, O) and $Σ$5 tilt grain boundaries in borophene and their influence on the anisotropic mechanical properties of this two-dimensional system. The pristine borophene has significant in-plane Young's moduli and Poisson's ratio anisotropy due to its strong and highly coordinated B-B bonds. The concentration of B vacancy and $Σ$5 grain boundary could be rather high given that their formation energies are as low as 0.10 eV and 0.06 eV/$Å$ respectively. In addition, our results also suggest that borophene can react easily with H$_2$, O$_2$ and N$_2$ when exposed to these molecules. We find that the mechanical properties of borophene are remarkably degraded by these defects. The anisotropy in Poisson's ratio, however, can be tuned by some of them. Furthermore, the adsorbed H or substitutional C may induce remarkably negative Poisson's ratio in borophene, and the substitutional C or N can significantly increase the Poisson's ratio by contrast.
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Submitted 11 May, 2017; v1 submitted 3 July, 2016;
originally announced July 2016.
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Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene
Authors:
V. Wang,
Y. C. Liu,
Y. Kawazoe,
W. T. Geng
Abstract:
Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% al…
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Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along zigzag direction. A semi-empirical interlayer coupling model is proposed, which can well reproduce the evolution of valence band-edges obtained by first-principles calculations. We conclude that the interlayer coupling plays a dominated role in the evolution of the band-edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. A scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of valence band maximum surpassing that of conduction band minimum.
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Submitted 26 January, 2016; v1 submitted 20 August, 2015;
originally announced August 2015.
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Native point defects in few-layer phosphorene
Authors:
V. Wang,
Y. Kawazoe,
W. T. Geng
Abstract:
Using hybrid density functional theory combined with a semiempirical van der Waals dispersion correction, we have investigated the structural and electronic properties of vacancies and self-interstitials in defective few-layer phosphorene. We find that both a vacancy and a self-interstitial defect are more stable in the outer layer than in the inner layer. The formation energy and transition energ…
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Using hybrid density functional theory combined with a semiempirical van der Waals dispersion correction, we have investigated the structural and electronic properties of vacancies and self-interstitials in defective few-layer phosphorene. We find that both a vacancy and a self-interstitial defect are more stable in the outer layer than in the inner layer. The formation energy and transition energy of both a vacancy and a self-interstitial P defect decrease with increasing film thickness, mainly due to the upward shift of the host valence band maximum in reference to the vacuum level. Consequently, both vacancies and self-interstitials could act as shallow acceptors, and this well explains the experimentally observed p-type conductivity in few-layer phosphorene. On the other hand, since these native point defects have moderate formation energies and are stable in negatively charged states, they could also serve as electron compensating centers in n-type few-layer phosphorene.
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Submitted 20 August, 2015; v1 submitted 17 September, 2014;
originally announced September 2014.
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Sources of n-type conductivity in GaInO3
Authors:
V. Wang,
W. Xiao,
L. -J. Kang,
R. -J. Liu,
H. Mizuseki,
Y. Kawazoe
Abstract:
Using hybrid density functional theory, we investigated formation energies and transition energies of possible donor-like defects in GaInO3, with the aim of exploring the sources of the experimentally observed n-type conductivity in this material. We predicted that O vacancies are deep donors; interstitial Ga and In are shallow donors but with rather high formation energies (>2.5 eV). Thus these i…
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Using hybrid density functional theory, we investigated formation energies and transition energies of possible donor-like defects in GaInO3, with the aim of exploring the sources of the experimentally observed n-type conductivity in this material. We predicted that O vacancies are deep donors; interstitial Ga and In are shallow donors but with rather high formation energies (>2.5 eV). Thus these intrinsic defects cannot cause high levels of n-type conductivity. However, ubiquitous H impurities existing in samples can act as shallow donors. As for extrinsic dopants, substitutional Sn and Ge are shown to act as effective donor dopants and can give rise to highly n-type conductive GaInO3; while substitutional N behaviors as a compensating center. Our results provide a consistent explanation of experimental observations.
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Submitted 5 November, 2014; v1 submitted 2 March, 2014;
originally announced March 2014.
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Electron spin-orbit interaction in helically coiled carbon nanotube
Authors:
Ning Ma,
Daqing Liu,
Vei Wang,
Erhu Zhang,
Shengli Zhang
Abstract:
Recent theoretical and experimental works on carbon nanotubes (CNTs) have revealed that spin-orbit interaction (SOI) is more robust than it was thought. Motivated by this, we investigate the SOI in helically coiled CNTs. Calculations are performed within the tight-binding model with the inclusion of a four-orbital basis set; thereby the full symmetry of the helical lattice and the hybridization of…
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Recent theoretical and experimental works on carbon nanotubes (CNTs) have revealed that spin-orbit interaction (SOI) is more robust than it was thought. Motivated by this, we investigate the SOI in helically coiled CNTs. Calculations are performed within the tight-binding model with the inclusion of a four-orbital basis set; thereby the full symmetry of the helical lattice and the hybridization of $π$\ and $σ$ bands are considered. By virtue of unitary transformation and perturbation approach, we obtain the analytic solution for the torsion-dependent SOI in helically coiled CNTs. Due to the enhancement of curvature and torsion, the calculated SOI values reach the order of meV which has been confirmed by \textit{ab initio} electronic structure calculation.
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Submitted 27 February, 2014;
originally announced February 2014.
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Hybrid functional with semi-empirical van der Waals study of native defects in hexagonal BN
Authors:
V. Wang,
R. J. Liu,
H. P. He,
C. M. Yang,
L. Ma
Abstract:
The formation energies and transition energy levels of native defects in hexagonal BN have been studied by first-principles calculations based on hybrid density functional theory (DFT) together with an empirical dispersion correction of Grimme's DFT-D2 method. Our calculated results predict that the interstitial B is the most stable defect under N-rich and p-type conditions. While the B vacancy an…
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The formation energies and transition energy levels of native defects in hexagonal BN have been studied by first-principles calculations based on hybrid density functional theory (DFT) together with an empirical dispersion correction of Grimme's DFT-D2 method. Our calculated results predict that the interstitial B is the most stable defect under N-rich and p-type conditions. While the B vacancy and interstitial N become the dominate defects when the electron chemical potential is near the conduction band maximum of host. Nevertheless, these compensating defects would be inactive due to their ultra deep ionization levels under both p- and n-type conditions.
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Submitted 30 October, 2013; v1 submitted 15 May, 2013;
originally announced May 2013.
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Roles of oxygen vacancies on ferromagnetism in Ni doped In2O3: A hybrid functional study
Authors:
V. Wang,
C. -Y. You,
H. -P. He,
D. -M. Ma,
H. Mizuseki,
Y. Kawazoe
Abstract:
The roles of oxygen vacancies on the electronic and magnetic properties of Ni doped In$_2$O$_3$ have been studied by first-principles calculations based on hybrid functional theory. Our results predict that the Ni-doped In$_2$O$_3$ system displays a ferromagnetic semiconducting character. However, the presence of oxygen vacancies results in antiferromagnetic coupling between the neighboring Ni pai…
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The roles of oxygen vacancies on the electronic and magnetic properties of Ni doped In$_2$O$_3$ have been studied by first-principles calculations based on hybrid functional theory. Our results predict that the Ni-doped In$_2$O$_3$ system displays a ferromagnetic semiconducting character. However, the presence of oxygen vacancies results in antiferromagnetic coupling between the neighboring Ni pair bridged by an oxygen vacancy. The antiferromagnetic coupling is found to arise from the predominant role of superexchange due to the strong Ni 3d-O 2p hybridization. Consequently, the oxygen vacancies play a key role in the lower saturation magnetization of Ni:In$_2$O$_3$ polycrystalline sample, as observed in experiments.
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Submitted 30 October, 2013; v1 submitted 15 May, 2013;
originally announced May 2013.
