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Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films
Authors:
Bhabani Prasad Sahu,
Poonam Sharma,
Santosh Kumar Yadav,
Alok Shukla,
Subhabrata Dhar
Abstract:
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used to ablate the target, are studied here. Films grown with higher laser fluence, are found to be embedded with Ni-clusters crystallographically aligned with the (1…
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(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used to ablate the target, are studied here. Films grown with higher laser fluence, are found to be embedded with Ni-clusters crystallographically aligned with the (111)NiO matrix. While the layers grown with lower laser energy density exhibit p-type conductivity specially at low growth temperatures. X-ray diffraction study shows the coexistence of biaxial compressive and tensile hydrostatic strains in these samples, which results in an expansion of the lattice primarily along the growth direction. This effective uniaxial expansion {epsilon}_perpendicular increases with the reduction of the growth temperature. Band gap of these samples is found to decrease linearly with {epsilon}_perpendicular. This result is validated by density functional theory (DFT) calculations. Experimental findings and the theoretical study further indicate that V_Ni + O_I and V_O + Ni_I complexes exist as the dominant native defects in samples grown with Ni-deficient (low laser fluence) and Ni-rich (high laser fluence) conditions, respectively. P-type conductivity observed in the samples grown in Ni-deficient condition is more likely to be resulting from V_Ni + O_I defects than Ni-vacancies (V_Ni).
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Submitted 19 April, 2024;
originally announced April 2024.
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Accelerating Defect Predictions in Semiconductors Using Graph Neural Networks
Authors:
Md Habibur Rahman,
Prince Gollapalli,
Panayotis Manganaris,
Satyesh Kumar Yadav,
Ghanshyam Pilania,
Brian DeCost,
Kamal Choudhary,
Arun Mannodi-Kanakkithodi
Abstract:
Here, we develop a framework for the prediction and screening of native defects and functional impurities in a chemical space of Group IV, III-V, and II-VI zinc blende (ZB) semiconductors, powered by crystal Graph-based Neural Networks (GNNs) trained on high-throughput density functional theory (DFT) data. Using an innovative approach of sampling partially optimized defect configurations from DFT…
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Here, we develop a framework for the prediction and screening of native defects and functional impurities in a chemical space of Group IV, III-V, and II-VI zinc blende (ZB) semiconductors, powered by crystal Graph-based Neural Networks (GNNs) trained on high-throughput density functional theory (DFT) data. Using an innovative approach of sampling partially optimized defect configurations from DFT calculations, we generate one of the largest computational defect datasets to date, containing many types of vacancies, self-interstitials, anti-site substitutions, impurity interstitials and substitutions, as well as some defect complexes. We applied three types of established GNN techniques, namely Crystal Graph Convolutional Neural Network (CGCNN), Materials Graph Network (MEGNET), and Atomistic Line Graph Neural Network (ALIGNN), to rigorously train models for predicting defect formation energy (DFE) in multiple charge states and chemical potential conditions. We find that ALIGNN yields the best DFE predictions with root mean square errors around 0.3 eV, which represents a prediction accuracy of 98 % given the range of values within the dataset, improving significantly on the state-of-the-art. Models are tested for different defect types as well as for defect charge transition levels. We further show that GNN-based defective structure optimization can take us close to DFT-optimized geometries at a fraction of the cost of full DFT. DFT-GNN models enable prediction and screening across thousands of hypothetical defects based on both unoptimized and partially-optimized defective structures, helping identify electronically active defects in technologically-important semiconductors.
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Submitted 13 September, 2023; v1 submitted 12 September, 2023;
originally announced September 2023.
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Stabilizing ultrathin Silver (Ag) films on different substrates
Authors:
Allamula Ashok,
Pradeep Kumar Rana,
Daljin Jacob,
Peela Lasya,
P Muhammed Razi,
Satyesh Kumar Yadav
Abstract:
This paper reports an effective method of stabilizing ultrathin Silver (Ag) films on substrates using a filler metal (Zn). Ag films with a thickness < 15 nm were deposited by DC magnetron sputtering above a Zn filler metal on glass, quartz, silicon and PET (polyethylene terephthalate) substrates. Zinc is expected to partially or fully fill the roughness associated with the substrates. The Zn fille…
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This paper reports an effective method of stabilizing ultrathin Silver (Ag) films on substrates using a filler metal (Zn). Ag films with a thickness < 15 nm were deposited by DC magnetron sputtering above a Zn filler metal on glass, quartz, silicon and PET (polyethylene terephthalate) substrates. Zinc is expected to partially or fully fill the roughness associated with the substrates. The Zn filler material and ultrathin Ag film form a 3-D augmented atomically chemically graded interface. 3-D interfaces have smoothly varying chemistry. The ability of Zn to partially or fully fill the substrate roughness improves the adhesion of Zn along with the Ag to the substrate. Also, Zn acts as a barrier layer against the diffusion of Ag into the substrate. This technique leads to ultrathin Ag films with low sheet resistance (~ 3 Ω/Sq.), low mean absolute surface roughness (~1 nm), good optical transparency (~ 65 %), better stability and compatibility with the environment. The results indicate significant potential for applying stable ultrathin Ag film/electrode as a practical and economically feasible design solution for optoelectronic (transparent and conductive electrodes for solar cells and LEDs) and plasmonic devices. This film shows good conductivity, transparency, stability, and flexibility.
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Submitted 27 June, 2023;
originally announced June 2023.
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Role of strain on the stability of B, C, N, and O in Iron
Authors:
P. S. V. R. A. Kishor,
Prince Gollapalli,
Debolina Misra,
Prajeet Oza,
Satyesh Kumar Yadav
Abstract:
The preference for the occupation of solute atoms like B, C, N, and O at various sites in iron is generally explained by the size of the solute and the volume available for the solute atoms to occupy. Such an explanation based on the size of solute atoms and available space at the occupation site assumes that distortion alone dictates the stability of solute atoms. Using first-principles density f…
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The preference for the occupation of solute atoms like B, C, N, and O at various sites in iron is generally explained by the size of the solute and the volume available for the solute atoms to occupy. Such an explanation based on the size of solute atoms and available space at the occupation site assumes that distortion alone dictates the stability of solute atoms. Using first-principles density functional theory (DFT), we separately calculate the distortion energy (DE) and electronic binding energy (EBE) of solute atoms in iron. We show that electronic binding dictates the relative stability of O rather than distortion. In contrast, the relative stability of B, C, and N is dictated by the distortion it exerts on iron atoms. Contribution to the relative stability of B atoms is dictated mostly by distortion. It suggests that B could occupy a large volume region like grain boundaries. The same agrees with experiments indicating B segregates at grain boundaries and planar defects. Such conclusions could not have been drawn from the formation energy calculation, which shows that B is stable at the substitution site.
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Submitted 18 August, 2022;
originally announced August 2022.
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Effect of substrate temperature on the optoelectronic properties of DC magnetron sputtered copper oxide films
Authors:
Aarju Mathew Koshy,
A Sudha,
Satyesh Kumar Yadav,
Parasuraman Swaminathan
Abstract:
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural…
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Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 °C. XRD analysis indicates that the oxide formed is primarily Cu$_2$O and the absorption spectra show the films have a critical absorption edge at around 300 nm. The sheet resistance gradually decreases with increase in deposition temperature thereby increasing the conductivity of these thin films. Also observed is the increase in band gap from 2.20 eV for room temperature deposition to 2.35 eV at 300 °C. The optical band gap and the variation of sheet resistance with temperature shows that the microstructure plays a vital role in their behavior. These transformation characteristics are of huge technological importance having variety of applications including transparent solar cell fabrication.
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Submitted 10 May, 2022;
originally announced May 2022.
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Designing a thermodynamically stable and intrinsically ductile refractory alloy
Authors:
Sufyan M. Shaikh,
B. S. Murty,
Satyesh K. Yadav
Abstract:
Developing ductile refractory BCC alloys has remained a challenge. The intrinsic ductility (D) of an alloy is the ratio of surface energy ($γ_s$) and unstable stacking fault energy ($γ_{usfe}$). Lowering the valence electron concentration has been shown to improve the intrinsic ductility of refractory alloys. However, Re has been widely used to ductilize W, contrary to the low valency criteria sug…
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Developing ductile refractory BCC alloys has remained a challenge. The intrinsic ductility (D) of an alloy is the ratio of surface energy ($γ_s$) and unstable stacking fault energy ($γ_{usfe}$). Lowering the valence electron concentration has been shown to improve the intrinsic ductility of refractory alloys. However, Re has been widely used to ductilize W, contrary to the low valency criteria suggested in the literature. Here we use density functional theory to calculate the enthalpy of formation, $γ_{usfe}$ and $γ_s$ of Group IV, V, VI elements and their 25 equiatomic binary alloys in BCC crystal structure. We found that positive enthalpy leads to a considerable reduction in $γ_{usfe}$ compared to composition averaged value, resulting in improved intrinsic ductility. Enthalpy is maximum at the equiatomic concentrations indicating the highly repulsive interaction between the alloy constituents and vicer-versa. We found that the repulsive interaction between the alloy constituents leads to a reduction in $γ_{usfe}$, making alloys intrinsically ductile.
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Submitted 14 September, 2022; v1 submitted 18 March, 2022;
originally announced March 2022.
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3-D Ti/TiN Interface
Authors:
Prince Gollapalli,
Varalakshmi Jalligampala,
Kishor Peddapuvvala,
Prajeet Oza,
Satyesh Kumar Yadav
Abstract:
Interface by definition is two-dimensional (2-D) as it separates 2 phases with an abrupt change in structure and chemistry across the interface. The interface between a metal and its nitride is expected to be atomically sharp, as chemical gradation would require the creation of N vacancies in nitrides and N interstitials in metal. Contrary to this belief, using first-principles density functional…
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Interface by definition is two-dimensional (2-D) as it separates 2 phases with an abrupt change in structure and chemistry across the interface. The interface between a metal and its nitride is expected to be atomically sharp, as chemical gradation would require the creation of N vacancies in nitrides and N interstitials in metal. Contrary to this belief, using first-principles density functional theory (DFT), we establish that the chemically graded Ti/TiN interface is thermodynamically preferred over the sharp interface. DFT calculated N vacancy formation energy in TiN is 2.4 eV, and N interstitial in Ti is -3.8 eV. Thus, diffusion of N from TiN to Ti by the formation of N vacancy in TiN and N interstitial in Ti would reduce the internal energy of the Ti-TiN heterostructure. We show that diffusion of N is thermodynamically favorable till ~23% of N has diffused from TiN to Ti, resulting in an atomically chemically graded interface, which we refer to as a 3-D interface. Experiments' inability to identify a 3-D interface in Ti/TiN could be attributed to limitations in identifying chemical composition and structure with atomic-level resolution at interfaces. We define the sum of N vacancy formation energy and N interstitial formation energy as driving-force, which could be used as a convenient way to assess the possibility of forming a 3-D interface in metal/ceramic heterostructures. We also show gradual variation in lattice parameters and mechanical properties (like bulk modulus, shear modulus, Young's modulus, and hardness) across the Ti/TiN interface. 3-D interfaces open a new way to control properties of metal/ceramic heterostructures, in line with the already established advantage of gradation at interfaces in micrometer length scale. For widely explored Ti/TiN multilayer nano-heterostructures, the possibility of forming 3-D interface could lead to enhanced wear and erosion resistance.
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Submitted 8 February, 2022;
originally announced February 2022.
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Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$
Authors:
Poulab Chakrabarti,
Santosh Kumar Yadav,
Swarup Deb,
Subhabrata Dhar
Abstract:
Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent ph…
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Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent photo-luminescence (PL) spectroscopic study has helped us in understanding how such deposition affects the dynamics of excitonic recombination in this system. The study further reveals two distinctly different Mn-incorporation regimes. Below a certain critical deposition amount of Mn, thin Mn-coating with large area coverage is found on MoS$_2$ layers and in this regime, substitution of Mo ions by Mn is detected through XPS. Dewetting takes place when Mn-deposition crosses the critical mark, which results in the formation of Mn-droplets on MoS$_2$ layers. In this regime, substitutional incorporation of Mn is suppressed, while the Raman study suggests an enhancement of disorder in the lattice with the Mn-deposition time. From PL investigation, it has been found that the increase of the amount of Mn-deposition not only enhances the density of non-radiative recombination channels for the excitons but also raises the barrier height for such recombination to take place. The study attributes these non-radiative transitions to certain Mo related defects (either Mo-vacancies or distorted Mo-S bonds), which are believed to be generated in large numbers during Mn-droplet formation stage as a result of the withdrawal of Mn ions from the Mo-substitutional sites.
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Submitted 16 January, 2022;
originally announced January 2022.
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Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique
Authors:
Santosh Kumar Yadav,
Subhabrata Dhar
Abstract:
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray diffraction and atomic force microscopy techniques as functions of growth temperature, oxygen pressure and the pulses count of the laser. The study shows that continuous…
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(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray diffraction and atomic force microscopy techniques as functions of growth temperature, oxygen pressure and the pulses count of the laser. The study shows that continuous epitaxial films of thickness as low as 3 nm with high crystalline quality, smooth surface and interface morphology can be grown by this technique. The study also reveals the co-existence of 60°-rotated (111) triangular domains of NiO in the film. The study also evidences the presence of a very low density of 60-degree dislocations in these films. Density of screw and edge dislocations are also estimated to be quite low. It has been found that growth-temperature, oxygen partial pressure and the film thickness can influence differently the density of various dislocation types. These parameters are also found to affect significantly the strain developed in the films.
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Submitted 7 March, 2021;
originally announced March 2021.
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Nb Implanted BaO as a Support for Gold Single Atoms
Authors:
Debolina Misra,
Satyesh K. Yadav
Abstract:
Using first-principles modelling based on density functional theory we show that oxides implanted with transition metal can act as support for Au single atoms, which are stable against agglomeration. In our previous work we have shown that implanted transition metal, doped in BaO is stable as interstitial in various charge states by transferring the excess charge to an acceptor level close to VBM.…
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Using first-principles modelling based on density functional theory we show that oxides implanted with transition metal can act as support for Au single atoms, which are stable against agglomeration. In our previous work we have shown that implanted transition metal, doped in BaO is stable as interstitial in various charge states by transferring the excess charge to an acceptor level close to VBM. Taking Nb as an example we show that single atom Au has its Fermi level close to the VBM of BaO and hence is able to accept charge from the dopant. This charge transfer process between Nb and Au helps Au atoms bind strongly on the doped BaO support. We also show that these charged Au atoms repel each other and prefer to remain atomically dispersed preventing cluster formation. Substitutional doping of transition metals have earlier been reported to bind Au atoms. However, if doped at interstitial sites, they can bind more Au atoms; for example, 5 Au atoms can be anchored per Nb dopant present in BaO interstitial, compared to 3 Au atoms when Nb is doped at substitutional site. This work paves the way for an altogether new technique of stabilizing noble metal single atoms on transition metal doped oxides.
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Submitted 29 September, 2020;
originally announced September 2020.
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On the Origin of Precipitation of Transition Metals Implanted in MgO
Authors:
Debolina Misra,
Satyesh K. Yadav
Abstract:
Transition metals implanted in single crystal MgO can precipitate out at grain boundaries or remain embedded in bulk. Using first-principles calculations based on density functional theory we have calculated the thermodynamic stability and diffusion coefficients of the implanted ions to explain Fe and Ni precipitation in MgO. Experimentally it has been observed that some of the Fe atoms precipitat…
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Transition metals implanted in single crystal MgO can precipitate out at grain boundaries or remain embedded in bulk. Using first-principles calculations based on density functional theory we have calculated the thermodynamic stability and diffusion coefficients of the implanted ions to explain Fe and Ni precipitation in MgO. Experimentally it has been observed that some of the Fe atoms precipitate out, while few Fe atoms in 2+ and 3+ charge states remain embedded in the lattice. Our simulation shows that at 600 K (typical annealing temperature) while neutral iron in MgO would migrate 1 $μ$m in few microseconds, it takes several years for the charged Fe ions to migrate the same distance. On the other hand, Ni ions in all its charge states (neutral, 1+, 2+, and 3+) would migrate 1 $μ$m in just few microseconds, at 600 K. This explains the experimental observation that implanted Ni always precipitates out. Our study paves a way forward to predict if ions implanted in stable oxide will be stable or will precipitate out.
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Submitted 26 September, 2020;
originally announced September 2020.
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Fluorine Intercalated Graphene: Formation of a 2D Spin Lattice through Pseudoatomization
Authors:
Shashi B. Mishra,
Satyesh K. Yadav,
D. G. Kanhere,
B. R. K. Nanda
Abstract:
A suspended layer made up of ferromagnetically ordered spins could be created between two mono/multilayer graphene through intercalation. Stability and electronic structure studies show that, when fluorine molecules are intercalated between two mono/multilayer graphene, their bonds get stretched enough ($\sim$ 1.9$-$2.0 Å) to weaken their molecular singlet eigenstate. Geometrically, these stretche…
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A suspended layer made up of ferromagnetically ordered spins could be created between two mono/multilayer graphene through intercalation. Stability and electronic structure studies show that, when fluorine molecules are intercalated between two mono/multilayer graphene, their bonds get stretched enough ($\sim$ 1.9$-$2.0 Å) to weaken their molecular singlet eigenstate. Geometrically, these stretched molecules form a pseudoatomized fluorine layer by maintaining a van der Waals separation of $\sim$ 2.6 Å from the adjacent carbon layers. As there is a significant charge transfer from the adjacent carbon layers to the fluorine layers, a mixture of triplet and doublet states stabilize to induce local spin-moments at each fluorine sites and in turn form a suspended 2D spin lattice. The spins of this lattice align ferromagnetically with nearest neighbour coupling strength as large as $\sim$ 100 meV. Our finite temperature \textit {ab initio} molecular dynamics study reveals that the intercalated system can be stabilized up to a temperature of 100 K with an average magnetic moment of $\sim$ 0.6 $μ_{B}$/F. However, if the graphene layers can be held fixed, the room temperature stability of such a system is feasible.
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Submitted 20 May, 2020;
originally announced May 2020.
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From Sharma-Mittal to von-Neumann Entropy of a Graph
Authors:
Souma Mazumdar,
Amrik Singh,
Supriyo Dutta,
Sandeep Kumar Yadav,
Partha Guha
Abstract:
In this article, we introduce the Sharma-Mittal entropy of a graph, which is a generalization of the existing idea of the von-Neumann entropy. The well-known R{é}nyi, Thallis, and von-Neumann entropies can be expressed as limiting cases of Sharma-Mittal entropy. We have explicitly calculated them for cycle, path, and complete graphs. Also, we have proposed a number of bounds for these entropies. I…
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In this article, we introduce the Sharma-Mittal entropy of a graph, which is a generalization of the existing idea of the von-Neumann entropy. The well-known R{é}nyi, Thallis, and von-Neumann entropies can be expressed as limiting cases of Sharma-Mittal entropy. We have explicitly calculated them for cycle, path, and complete graphs. Also, we have proposed a number of bounds for these entropies. In addition, we have also discussed the entropy of product graphs, such as Cartesian, Kronecker, Lexicographic, Strong, and Corona products. The change in entropy can also be utilized in the analysis of growing network models (Corona graphs), useful in generating complex networks.
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Submitted 20 February, 2019;
originally announced February 2019.
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Stability of Implanted Transition Metal Dopants in Rock-salt Oxides
Authors:
Debolina Misra,
Satyesh K. Yadav
Abstract:
Transition metals (TMs) implanted in oxides with rock-salt crystal structures (for example MgO and BaO) are assumed to substitute cations (Mg in case of MgO) from the lattice sites. We show that not all implanted TMs substitute cations but can be stable in interstitial sites as well. Stability of TM (Sc--Zn) dopants in various charge states in MgO and BaO has been investigated in the framework of…
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Transition metals (TMs) implanted in oxides with rock-salt crystal structures (for example MgO and BaO) are assumed to substitute cations (Mg in case of MgO) from the lattice sites. We show that not all implanted TMs substitute cations but can be stable in interstitial sites as well. Stability of TM (Sc--Zn) dopants in various charge states in MgO and BaO has been investigated in the framework of density functional theory. We propose an effective way to calculate stability of implanted metals that let us predict site preference (interstitial or substitution) of the dopant in the host. We find that two factors govern the preference for an interstitial site: i) relative ionic radius and ii) relative oxygen affinity of cation and the TM dopants. If the radius of the cation is much larger than TM dopant, as in BaO, TM atoms always sit at interstitial sites. On the other hand, if the radius of the cation is comparable to that of the dopant TM, as in case of MgO, the transition of the preferred defect site, from substituting lattice Mg atom (Sc to Mn) to occupying interstitial site (Fe to Zn) is observed. This transition can be attributed to the change in the oxygen affinity of the TM atoms from Sc to Zn. Our results also explain experiments on Ni and Fe atoms implanted in MgO. This is the first-time we have shown that TM dopants can be stable at interstitial sites in stable compounds, which could potentially give rise to exotic properties.
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Submitted 13 March, 2019; v1 submitted 16 January, 2019;
originally announced January 2019.
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Strength of Cu-TiN and Al-TiN interfaces from first-principles
Authors:
S. K. Yadav,
R. Ramprasad,
J. Wang,
A. Misra,
X. -Y. Liu
Abstract:
Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the ideal tensile and shear strengths of Cu/TiN and Al/TiN interfaces are calculated. While there is a strong orientation relation (OR) preference for Al/TiN inter…
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Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the ideal tensile and shear strengths of Cu/TiN and Al/TiN interfaces are calculated. While there is a strong orientation relation (OR) preference for Al/TiN interface, there is no OR preference for Cu/TiN interface. Both the ideal tensile and shear strengths of Cu/TiN interfaces are lower than those of bulk Cu and TiN, suggesting such interfaces are weaker than their bulk components. By comparison, the ideal strengths of Al/TiN interface are comparable to the constituents in the bulk form. Such contrasting interfaces can be a test-bed for studying the role of interfaces in determining the mechanical behavior of the nanolayered structures.
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Submitted 28 June, 2016;
originally announced June 2016.
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First-principles modeling of zincblende AlN layer in Al-AlN-TiN multilayers
Authors:
Satyesh K Yadav,
Jian Wang,
Xiang-Yang Liu
Abstract:
An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation ene…
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An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.
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Submitted 2 May, 2016; v1 submitted 9 April, 2016;
originally announced April 2016.
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Band-gap and Band-edge Engineering of Multicomponent Garnet Scintillators: A First-principles Study
Authors:
Satyesh K. Yadav,
Blas P. Uberuaga,
Martin Nikl,
Chao Jiang,
Chris R. Stanek
Abstract:
Complex doping schemes in RE$_3$Al$_5$O$_{12}$ (RE=rare earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band-gap was altered in a manner that facilitated the removal of deleterious electron trapping associated with cation antisite defects. Here…
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Complex doping schemes in RE$_3$Al$_5$O$_{12}$ (RE=rare earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band-gap was altered in a manner that facilitated the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density functional theory was used to survey potential admixing candidates that modify either the conduction band minimum (CBM) or valence band maximum (VBM). We considered two sets of compositions based on Lu$_3$B$_5$O$_{12}$ where B = Al, Ga, In, As, and Sb; and RE$_3$Al$_5$O$_{12}$, where RE = Lu, Gd, Dy, and Er. We found that admixing with various RE cations does not appreciably effect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. This approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.
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Submitted 5 May, 2015;
originally announced May 2015.
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Controlling Electronic Structure Through Epitaxial Strain in ZnSe/ZnTe Nano-heterostructures
Authors:
Satyesh Kumar Yadav,
Vinit Sharma,
Rampi Ramprasad
Abstract:
Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0-1.5 eV) is accessible across the heterostructures in a…
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Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0-1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.
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Submitted 12 July, 2015; v1 submitted 5 May, 2015;
originally announced May 2015.
