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Signatures of van Hove singularities in the anisotropic in-plane optical conductivity of the topological semimetal Nb$_3$SiTe$_6$
Authors:
J. Ebad-Allah,
A. A. Tsirlin,
Y. L. Zhu,
Z. Q. Mao,
C. A. Kuntscher
Abstract:
We present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb$_3$SiTe$_6$ combined with density-functional theory (DFT) calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane ($ac$-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41~…
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We present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb$_3$SiTe$_6$ combined with density-functional theory (DFT) calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane ($ac$-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41~eV for the polarization of the incident radiation along the $c$ axis. These excitations are well reproduced in the theoretical spectra. Based on the \textit{ab initio} results, the excitations around 0.15 eV and 0.28 eV are interpreted as fingerprints of van Hove singularities in the electronic band structure and compared to the findings for other topological semimetals.
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Submitted 15 February, 2023;
originally announced February 2023.
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In-plane and out-of-plane optical response of the nodal-line semimetals ZrGeS and ZrGeSe
Authors:
J. Ebad-Allah,
S. Rojewski,
Y. L. Zhu,
Z. Q. Mao,
C. A. Kuntscher
Abstract:
Polarization-dependent reflectivity measurements were carried out over a broad frequency range on single-crystalline ZrGeSe and ZrGeS compounds, which are closely related to the prototype nodal-line semimetal ZrSiS. These measurements revealed the strongly anisotropic character of both ZrGeSe and ZrGeS, with a reduced plasma frequency for the out-of-plane direction {\bf E}$\| c$ as compared to the…
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Polarization-dependent reflectivity measurements were carried out over a broad frequency range on single-crystalline ZrGeSe and ZrGeS compounds, which are closely related to the prototype nodal-line semimetal ZrSiS. These measurements revealed the strongly anisotropic character of both ZrGeSe and ZrGeS, with a reduced plasma frequency for the out-of-plane direction {\bf E}$\| c$ as compared to the in-plane direction {\bf E}$\| ab$. For {\bf E}$\| ab$ the optical conductivity spectrum consists of two Drude terms followed by a shoulder or plateau-like behavior and a distinct U shape at higher energies, while for {\bf E}$\| c$ one Drude term is followed by a peak-like behavior and the U shape of the profile is less developed. Under external pressure, two prominent excitations appear in the out-of-plane optical conductivity spectrum of ZrGeSe, whose frequency position and oscillator strength show a weak anomaly at $\sim$3~GPa. Overall, the pressure-induced changes in the profile of the {\bf E}$\| c$ conductivity spectrum are much enhanced above $\sim$3~GPa. We compare our results to those recently reported for ZrSiS in a quantitative manner.
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Submitted 10 August, 2022;
originally announced August 2022.
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Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states
Authors:
Y. D. Guan,
C. H. Yan,
S. H. Lee,
X. Gui,
W. Ning,
J. L. Ning,
Y. L. Zhu,
M. Kothakonda,
C. Q. Xu,
X. L. Ke,
J. W. Sun,
W. W. Xie,
S. L. Yang,
Z. Q. Mao
Abstract:
The tuning of magnetic phase, chemical potential, and structure is crucial to observe diverse exotic topological quantum states in $MnBi_2Te_4(Bi_2Te_3)_m$ (m = 0, 1, 2, & 3). Here we show a ferromagnetic (FM) phase with a chiral crystal structure in $Mn(Bi_{1-x}Sb_x)_4Te_7$, obtained via tuning the growth conditions and Sb concentration. Unlike previously reported $Mn(Bi_{1-x}Sb_x)_4Te_7$, which…
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The tuning of magnetic phase, chemical potential, and structure is crucial to observe diverse exotic topological quantum states in $MnBi_2Te_4(Bi_2Te_3)_m$ (m = 0, 1, 2, & 3). Here we show a ferromagnetic (FM) phase with a chiral crystal structure in $Mn(Bi_{1-x}Sb_x)_4Te_7$, obtained via tuning the growth conditions and Sb concentration. Unlike previously reported $Mn(Bi_{1-x}Sb_x)_4Te_7$, which exhibits FM transitions only at high Sb doping levels, our samples show FM transitions ($T_C$ = 13.5 K) at 15%-27% doping levels. Furthermore, our single crystal x-ray diffraction structure refinements find Sb doping leads to a chiral structure with the space group of P3, contrasted with the centrosymmetric P-3m1 crystal structure of the parent compound $MnBi_4Te_7$. Through ARPES measurements, we also demonstrated that the non-trivial band topology is preserved in the Sb-doped FM samples. Given that the non-trivial band topology of this system remains robust for low Sb doping levels, our success in making FM $Mn(Bi_{1-x}Sb_x)_4Te_7$ with $x$ = 0.15, 0.175, 0.2 & 0.27 paves the way for realizing the predicted topological quantum states such as axion insulator and Weyl semimetals. Additionally, we also observed magnetic glassy behavior in both antiferromagnetic $MnBi_4Te_7$ and FM $Mn(Bi_{1-x}Sb_x)_4Te_7$ samples, which we believe originates from cluster spin glass phases coexisting with long-range AFM/FM orders. We have also discussed how the antisite Mn ions impact the interlayer magnetic coupling and how FM interlayer coupling is stabilized in this system.
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Submitted 4 May, 2022;
originally announced May 2022.
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Field-induced magnetic phase transitions and the resultant giant anomalous Hall effect in antiferromagnetic half-Heusler DyPtBi
Authors:
H. Zhang,
Y. L. Zhu,
Y. Qiu,
W. Tian,
H. B. Cao,
Z. Q. Mao,
X. Ke
Abstract:
We report field-induced magnetic phase transitions and transport properties of antiferromagnetic DyPtBi. We show that DyPtBi hosts a delicate balance between two different magnetic ground states, which can be controlled by a moderate magnetic field. Furthermore, it exhibits giant anomalous Hall effect (σ_A=1540 (ohm cm)^{-1},θ_{AHE} = 24%) in a field-induced Type-I spin structure, presumably attri…
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We report field-induced magnetic phase transitions and transport properties of antiferromagnetic DyPtBi. We show that DyPtBi hosts a delicate balance between two different magnetic ground states, which can be controlled by a moderate magnetic field. Furthermore, it exhibits giant anomalous Hall effect (σ_A=1540 (ohm cm)^{-1},θ_{AHE} = 24%) in a field-induced Type-I spin structure, presumably attributed to the enhanced Berry curvature associated with avoided band-crossings near the Fermi energy and / or non-zero spin chirality. The latter mechanism points DyPtBi towards a rare potential realization of anomalous Hall effect in an antiferromagnet with face-center-cubic lattice that was proposed in [Physical Review Letters 87, 116801 (2001)].
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Submitted 25 August, 2020;
originally announced August 2020.
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Indications for Lifshitz transitions in the nodal-line semimetal ZrSiTe induced by interlayer interaction
Authors:
M. Krottenmüller,
M. Vöst,
N. Unglert,
J. Ebad-Allah,
G. Eickerling,
D. Volkmer,
J. Hu,
Y. L. Zhu,
Z. Q. Mao,
W. Scherer,
C. A. Kuntscher
Abstract:
The layered material ZrSiTe is currently extensively investigated as a nodal-line semimetal with Dirac-like band crossings protected by nonsymmorphic symmetry close to the Fermi energy. A recent infrared spectroscopy study on ZrSiTe under external pressure found anomalies in the optical response, providing hints for pressure-induced phase transitions at $\approx$4.1 and $\approx$6.5 GPa. By pressu…
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The layered material ZrSiTe is currently extensively investigated as a nodal-line semimetal with Dirac-like band crossings protected by nonsymmorphic symmetry close to the Fermi energy. A recent infrared spectroscopy study on ZrSiTe under external pressure found anomalies in the optical response, providing hints for pressure-induced phase transitions at $\approx$4.1 and $\approx$6.5 GPa. By pressure-dependent Raman spectroscopy and x-ray diffraction measurements combined with electronic band structure calculations we find indications for two pressure-induced Lifshitz transitions with major changes in the Fermi surface topology in the absence of lattice symmetry changes. These electronic phase transitions can be attributed to the enhanced interlayer interaction induced by external pressure. Our findings demonstrate the crucial role of the interlayer distance for the electronic properties of layered van der Waals topological materials.
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Submitted 4 February, 2020;
originally announced February 2020.
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Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure
Authors:
Yingying Wu,
Senfu Zhang,
Gen Yin,
Junwei Zhang,
Wei Wang,
Yang Lin Zhu,
Jin Hu,
Kin Wong,
Chi Fang,
Caihua Wan,
Xiufeng Han,
Qiming Shao,
Takashi Taniguchi,
Kenji Watanabe,
Jiadong Zang,
Zhiqiang Mao,
Xixiang Zhang,
Kang L. Wang
Abstract:
The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offe…
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The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.
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Submitted 8 January, 2020; v1 submitted 25 July, 2019;
originally announced July 2019.
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Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$
Authors:
J. Y. Liu,
J. Yu,
J. L. Ning,
H. M. Yi,
L. Miao,
L. J. Min,
Y. F. Zhao,
W. Ning,
K. A. Lopez,
Y. L. Zhu,
T. Pillsbury,
Y. B. Zhang,
Y. Wang,
J. Hu,
H. B. Cao,
F. Balakirev,
F. Weickert,
M. Jaime,
Y. Lai,
Kun Yang,
J. W. Sun,
N. Alem,
V. Gopalan,
C. Z. Chang,
N. Samarth
, et al. (3 additional authors not shown)
Abstract:
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently co…
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Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
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Submitted 4 November, 2020; v1 submitted 14 July, 2019;
originally announced July 2019.
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Infrared spectroscopy study of the nodal-line semimetal candidate ZrSiTe under pressure: Hints for pressure-induced phase transitions
Authors:
J. Ebad-Allah,
M. Krottenmüller,
J. Hu,
Y. L. Zhu,
Z. Q. Mao,
C. A. Kuntscher
Abstract:
We studied the effect of external pressure on the optical response of the nodal-line semimetal candidate ZrSiTe by reflectivity measurements. At pressures of a few GPa, the reflectivity, optical conductivity, and loss function are strongly affected in the whole measured frequency range (200-16500 cm$^{-1}$), indicating drastic changes in the electronic band structure. The pressure-induced shift of…
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We studied the effect of external pressure on the optical response of the nodal-line semimetal candidate ZrSiTe by reflectivity measurements. At pressures of a few GPa, the reflectivity, optical conductivity, and loss function are strongly affected in the whole measured frequency range (200-16500 cm$^{-1}$), indicating drastic changes in the electronic band structure. The pressure-induced shift of the electronic bands affects both the intraband and interband transitions. We find anomalies in the pressure dependence of several optical parameters at the pressures $P_{c1}$$\approx$4.1 GPa and $P_{c2}$$\approx$6.5 GPa, suggesting the occurrence of two phase transitions of either structural or electronic type.
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Submitted 17 June, 2019;
originally announced June 2019.
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Converse flexoelectricity around ferroelastic domain walls
Authors:
Y. J. Wang,
Y. L. Tang,
Y. L. Zhu,
Y. P. Feng,
X. L. Ma
Abstract:
Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of ferroelastic DWs can be simply explained from the perspective of mechanical and electric compatibilities in the framework of the Landau-Ginzburg-Devonshire (LGD) th…
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Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of ferroelastic DWs can be simply explained from the perspective of mechanical and electric compatibilities in the framework of the Landau-Ginzburg-Devonshire (LGD) theory. Here we show that the converse flexoelectricity must be taken into account for fully describing the nature of ferroelastic DWs. In our work, an unexpected asymmetric structure is identified, which is beyond the prediction of the conventional LGD theory. By incorporating the converse flexoelectricity into the LGD theory and using it to analyze high-resolution images acquired by the aberration-corrected transmission electron microscope (TEM), we demonstrate that it is the converse flexoelectricity that result in the asymmetric structure. Moreover, the flexoelectric coefficient is derived by quantifying the converse flexoelectricity around the DWs. This quantification is deterministic in both the magnitude and sign of flexoelectric coefficients, by the mutual verification of atomic mapping and first-principles calculations. Our results suggest that the converse flexoelectricity cannot be neglected for understanding the ferroelastic DWs and other boundaries in ferroelectric materials.
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Submitted 21 May, 2019;
originally announced May 2019.
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Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films
Authors:
M. J. Han,
E. A. Eliseev,
A. N. Morozovska,
Y. L. Zhu,
Y. L. Tang,
Y. J. Wang,
X. W. Guo,
X. L. Ma
Abstract:
The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic mechanisms of domain wall phenomena, especially AFD-FE coupling-induced phenomena at the domain walls, have continued to intrigue the scientific and technological commun…
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The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic mechanisms of domain wall phenomena, especially AFD-FE coupling-induced phenomena at the domain walls, have continued to intrigue the scientific and technological communities because of the need to develop the future nano-scale electronic devices. Over the past years, theoretical studies often show controversial results, owing to the fact that they are neither sufficiently nor directly corroborated with experimental evidences. In this work, the AFD-FE coupling at uncharged 180° and 71° domain walls in BiFeO3 films are investigated by means of aberration-corrected scanning transmission electron microscopy with high resolution (HR-STEM) and rationalized by phenomenological Landau-Ginsburg-Devonshire (LGD) theory. We reveal a peculiar morphology at the AFD-FE walls, including kinks, meandering, triangle-like regions with opposite oxygen displacements and curvature near the interface. The LGD theory confirms that the tilt gradient energy induces these unusual morphology and the features would change delicately with different kinds of domain walls. Moreover, the 180° AFD-FE walls are proved to be conductive with an unexpected reduction of Fe-O-Fe bond angle, which is distinct from theoretical predictions. By exploring AFD-FE coupling at domain walls and its induced functionalities, we provide exciting evidences into the links between structural distortions and its electronic properties, which benefit a lot for fundamental understanding for domain wall functionalities as well as functional manipulations for novel nano-devices.
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Submitted 13 March, 2019;
originally announced March 2019.
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Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSi$Y$ ($Y$=S, Se, Te) and ZrGe$Y$ ($Y$=S, Te)
Authors:
J. Ebad-Allah,
J. Fernández Afonso,
M. Krottenmüller,
J. Hu,
Y. L. Zhu,
Z. Mao,
J. Kuneš,
C. A. Kuntscher
Abstract:
ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U s…
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ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000~cm$^{-1}$ for all studied compounds, except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the $c$/$a$ ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in Zr$XY$ compounds with $X$=Si, Ge and $Y$=S, Se, Te is closely connected to the interlayer bonding.
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Submitted 25 March, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Emergence of intrinsic superconductivity below 1.178 K in the topologically non-trivial semimetal state of CaSn3
Authors:
Y. L. Zhu,
J. Hu,
F. N. Womack,
D. Graf,
Y. Wang,
P. W. Adams,
Z. Q. Mao
Abstract:
Topological materials which are also superconducting are of great current interest, since they may exhibit a non-trivial topologically-mediated superconducting phase. Although there have been many reports of pressure-tuned or chemical-doping-induced superconductivity in a variety of topological materials, there have been few examples of intrinsic, ambient pressure superconductivity in a topologica…
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Topological materials which are also superconducting are of great current interest, since they may exhibit a non-trivial topologically-mediated superconducting phase. Although there have been many reports of pressure-tuned or chemical-doping-induced superconductivity in a variety of topological materials, there have been few examples of intrinsic, ambient pressure superconductivity in a topological system having a stoichiometric composition. Here, we report that the pure intermetallic CaSn3 not only exhibits topological fermion properties but also has a superconducting phase at 1.178 K under ambient pressure. The topological fermion properties, including the nearly zero quasi-particle mass and the non-trivial Berry phase accumulated in cyclotron motions, were revealed from the de Haas-van Alphen (dHvA) quantum oscillation studies of this material. Although CaSn3 was previously reported to be superconducting at 4.2K, our studies show that the superconductivity at 4.2K is extrinsic and caused by Sn on the degraded surface, whereas its intrinsic bulk superconducting transition occurs at 1.178 K. These findings make CaSn3 a promising candidate for exploring new exotic states arising from the interplay between non-trivial band topology and superconductivity, e.g. topological superconductivity
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Submitted 28 November, 2018;
originally announced November 2018.
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Superconductivity in half-Heusler compound TbPdBi
Authors:
H. Xiao,
T. Hu,
W. Liu,
Y. L. Zhu,
P. G. Li,
G. Mu,
J. Su,
K. Li,
Z. Q. Mao
Abstract:
We have studied the half-Heusler compound TbPdBi through resistivity, magnetization, Hall effect and heat capacity measurements. A semimetal behavior is observed in its normal state transport properties, which is characterized by a large negative magnetoresistance below 100 K. Notably, we find the coexistence of superconductivity and antiferromagnetism in this compound. The superconducting transit…
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We have studied the half-Heusler compound TbPdBi through resistivity, magnetization, Hall effect and heat capacity measurements. A semimetal behavior is observed in its normal state transport properties, which is characterized by a large negative magnetoresistance below 100 K. Notably, we find the coexistence of superconductivity and antiferromagnetism in this compound. The superconducting transition appears at 1.7 K, while the antiferromagnetic phase transition takes place at 5.5 K. The upper critical field $H_{c2}$ shows an unusual linear temperature dependence, implying unconventional superconductivity. Moreover, when the superconductivity is suppressed by magnetic field, its resistivity shows plateau behavior, a signature often seen in topological insulators/semimetals. These findings establish TbPdBi as a platform for study of the interplay between superconductivity, magnetism and non-trivial band topology.
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Submitted 13 June, 2018;
originally announced June 2018.
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Quantum oscillation studies of topological semimetal candidate ZrGeM (M=S, Se, Te)
Authors:
J. Hu,
Y. L. Zhu,
D. Graf,
Z. J. Tang,
J. Y. Liu,
Z. Q. Mao
Abstract:
The WHM - type materials (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=O/S/Se/Te) have been predicted to be a large pool of topological materials. These materials allow for fine tuning of spin-orbit coupling, lattice constant and structural dimensionality for various combinations of W, H and M elements, thus providing an excellent platform to study how these parameters' tuning affect topological semimetal state.…
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The WHM - type materials (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=O/S/Se/Te) have been predicted to be a large pool of topological materials. These materials allow for fine tuning of spin-orbit coupling, lattice constant and structural dimensionality for various combinations of W, H and M elements, thus providing an excellent platform to study how these parameters' tuning affect topological semimetal state. In this work, we report the high field quantum oscillation studies on ZrGeM (M=S, Se, and Te). We have found the first experimental evidence for their theoretically-predicted topological semimetal states. From the angular dependence of quantum oscillation frequency, we have also studied the Fermi surface topologies of these materials. Moreover, we have compared Dirac electron behavior between the ZrGeM and ZrSiM systems, which reveals deep insights to the tuning of Dirac state by spin-orbit coupling and lattice constants in the WHM systems.
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Submitted 25 February, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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A magnetic topological semimetal Sr1-yMn1-zSb2 (y, z< 0.1)
Authors:
J. Y. Liu,
J. Hu,
Q. Zhang,
D. Graf,
H. B. Cao,
S. M. A. Radmanesh,
D. J. Adams,
Y. L. Zhu,
G. F. Cheng,
X. Liu,
W. A. Phelan,
J. Wei,
D. A. Tennant,
J. F. DiTusa,
I. Chiorescu,
L. Spinu,
Z. Q. Mao
Abstract:
Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semi…
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Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semimetal Sr1-yMn1-zSb2 (y,z<0.1) with nearly massless relativistic fermion behaviour (m*=0.04-0.05m0, where m0 is the free electron mass). This material exhibits a ferromagnetic order for 304K < T < 565K, but a canted antiferromagnetic order with a ferromagnetic component for T < 304K. The combination of relativistic fermion behaviour and ferromagnetism in Sr1-yMn1-zSb2 offers a rare opportunity to investigate the interplay between relativistic fermions and spontaneous TRS breaking.
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Submitted 10 August, 2017; v1 submitted 28 July, 2015;
originally announced July 2015.
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Boson Mapping and Nonlinear Response of Type-II Superconductors
Authors:
H. D. Chen,
W. P. Bai,
D. L. Yin,
Y. L. Zhu,
G. Li,
C. Y. Li
Abstract:
The vortices in a high-Tc superconductor with strong correlated pinning centers have been studied numerically using the mapping to charged bosons in two-dimensions(2D) and the Monte-Carlo algorithm. Considering the viscous dissipation of moving vortices we derived a nonlinear voltage response expression which describes different regimes and their crossover uniformly. This equation accords with e…
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The vortices in a high-Tc superconductor with strong correlated pinning centers have been studied numerically using the mapping to charged bosons in two-dimensions(2D) and the Monte-Carlo algorithm. Considering the viscous dissipation of moving vortices we derived a nonlinear voltage response expression which describes different regimes and their crossover uniformly. This equation accords with experimental results.
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Submitted 21 September, 1998;
originally announced September 1998.
