-
Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$
Authors:
Jorrit C. de Boer,
Daan H. Wielens,
Joris A. Voerman,
Bob de Ronde,
Yingkai Huang,
Mark S. Golden,
Chuan Li,
Alexander Brinkman
Abstract:
The field of topological materials science has recently been focussing on three-dimensional Dirac semimetals, which exhibit robust Dirac phases in the bulk. However, the absence of characteristic surface states in accidental Dirac semimetals (DSM) makes it difficult to experimentally verify claims about the topological nature using commonly used surface-sensitive techniques. The chiral magnetic ef…
▽ More
The field of topological materials science has recently been focussing on three-dimensional Dirac semimetals, which exhibit robust Dirac phases in the bulk. However, the absence of characteristic surface states in accidental Dirac semimetals (DSM) makes it difficult to experimentally verify claims about the topological nature using commonly used surface-sensitive techniques. The chiral magnetic effect (CME), which originates from the Weyl nodes, causes an $\textbf{E}\cdot\textbf{B}$-dependent chiral charge polarization, which manifests itself as negative magnetoresistance. We exploit the extended lifetime of the chirally polarized charge and study the CME through both local and non-local measurements in Hall bar structures fabricated from single crystalline flakes of the DSM Bi$_{0.97}$Sb$_{0.03}$. From the non-local measurement results we find a chiral charge relaxation time which is over one order of magnitude larger than the Drude transport lifetime, underlining the topological nature of Bi$_{0.97}$Sb$_{0.03}$.
△ Less
Submitted 31 January, 2019;
originally announced January 2019.
-
Zeeman effect induced 0-$π$ transitions in ballistic Dirac semimetal Josephson junctions
Authors:
Chuan Li,
Bob de Ronde,
Jorrit de Boer,
Joost Ridderbos,
Floris Zwanenburg,
Yingkai Huang,
Alexander Golubov,
Alexander Brinkman
Abstract:
One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is $π$-junction behavior. The finite momentum can either be due to an exchange field in ferromagnetic Josephson junctions, or due to the Zeeman effect. Here, we report the observation of Zeeman effect induced 0-$π$ transitions in Bi$_{1-x}$Sb$_x$, 3D Dirac semimetal-based Josephson junctions…
▽ More
One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is $π$-junction behavior. The finite momentum can either be due to an exchange field in ferromagnetic Josephson junctions, or due to the Zeeman effect. Here, we report the observation of Zeeman effect induced 0-$π$ transitions in Bi$_{1-x}$Sb$_x$, 3D Dirac semimetal-based Josephson junctions. The large g-factor of the Zeeman effect from a magnetic field applied in the plane of the junction allows tuning of the Josephson junctions from 0- to $π$- regimes. This is revealed by sign changes in the modulation of the critical current by applied magnetic field of an asymmetric superconducting quantum interference device (SQUID). Additionally, we directly measure a non-sinusoidal current-phase relation in the asymmetric SQUID, consistent with models for ballistic Josephson transport.
△ Less
Submitted 16 July, 2019; v1 submitted 20 July, 2018;
originally announced July 2018.
-
Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe$_2$
Authors:
Chuan Li,
Bob de Ronde,
Artem Nikitin,
Yingkai Huang,
Mark S. Golden,
Anne de Visser,
Alexander Brinkman
Abstract:
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall ed…
▽ More
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured.
△ Less
Submitted 21 July, 2017;
originally announced July 2017.
-
$4π$ periodic Andreev bound states in a Dirac semimetal
Authors:
Chuan Li,
Jorrit C. de Boer,
Bob de Ronde,
Shyama V. Ramankutty,
Erik van Heumen,
Yingkai Huang,
Anne de Visser,
Alexander A. Golubov,
Mark S. Golden,
Alexander Brinkman
Abstract:
Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a developing platform of novel quantum materials. Bi$_{1-x}$Sb$_x$ supports a three-dimensional Dirac cone at the Sb-induced band inversion point. Nanoscale phase-sensitive junction technology is used to induce superconductivity in this Dirac semimetal. Radio frequency irradiation experiment…
▽ More
Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a developing platform of novel quantum materials. Bi$_{1-x}$Sb$_x$ supports a three-dimensional Dirac cone at the Sb-induced band inversion point. Nanoscale phase-sensitive junction technology is used to induce superconductivity in this Dirac semimetal. Radio frequency irradiation experiments reveal a significant contribution of 4$π$-periodic Andreev bound states to the supercurrent in Nb-Bi$_{0.97}$Sb$_{0.03}$-Nb Josephson junctions. The conditions for a substantial $4π$ contribution to the supercurrent are favourable because of the Dirac cone's topological protection against backscattering, providing very broad transmission resonances. The large g-factor of the Zeeman effect from a magnetic field applied in the plane of the junction, allows tuning of the Josephson junctions from 0 to $π$ regimes.
△ Less
Submitted 11 July, 2017;
originally announced July 2017.
-
An addressable quantum dot qubit with fault-tolerant control fidelity
Authors:
M. Veldhorst,
J. C. C. Hwang,
C. H. Yang,
A. W. Leenstra,
B. de Ronde,
J. P. Dehollain,
J. T. Muhonen,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. S. Dzurak
Abstract:
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges…
▽ More
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.
△ Less
Submitted 8 July, 2014;
originally announced July 2014.
